CN109004067A - A kind of N-shaped preparation method of solar battery - Google Patents
A kind of N-shaped preparation method of solar battery Download PDFInfo
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- CN109004067A CN109004067A CN201811125494.0A CN201811125494A CN109004067A CN 109004067 A CN109004067 A CN 109004067A CN 201811125494 A CN201811125494 A CN 201811125494A CN 109004067 A CN109004067 A CN 109004067A
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- 238000007639 printing Methods 0.000 claims abstract description 54
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- 239000000758 substrate Substances 0.000 claims description 35
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 31
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 30
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 19
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- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000003854 Surface Print Methods 0.000 description 6
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- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of N-shaped preparation method of solar battery, after the selective emitter that completes, the first indicia patterns can be set in the n-type doping layer surface for being provided with selective emitter, and when the first grid line is arranged, first the second indicia patterns for being preset in Printing screen and the first indicia patterns are aligned, so that Printing screen and selective emitter be aligned；The first grid line aligned again in the setting of selective emitter surface with selective emitter by the Printing screen aligned, to realize the accurate positioning of selective emitter and the first grid line by above-mentioned first indicia patterns and the second indicia patterns, i.e., the precision aligned between grid line and selective emitter is improved by the first indicia patterns of setting and the second indicia patterns.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly to a kind of N-shaped preparation method of solar battery.
Background technique
With the continuous development of solar energy industry, N-shaped solar battery is lower because of incident photon-to-electron conversion efficiency with higher
Photo attenuation, the characteristics such as good stability and generating electricity on two sides and be concerned.In order to further enhance the photoelectric conversion of battery
Efficiency, reduces production cost, and more and more companies start using selective emitter technology.
So-called selective emitter, be the position that grid line is contacted with silicon wafer carry out heavy doping, between grid line position into
Constituted emitter is lightly doped in row.Selective emitter can reduce that doped layer is compound, and the short wave response of light thus can be improved,
The contact resistance of grid line and silicon wafer is reduced simultaneously, so that short circuit current, open-circuit voltage and fill factor are all preferably improved,
To improve transfer efficiency.
Under normal conditions, selective emitter can be first made in doped layer, then is making mixing for selective emitter
Diamicton surface printing simultaneously sinters grid line corresponding with selective emitter into, solar battery is finally prepared.But
In preparation process, often occur misplacing between grid line and selective emitter, it is lower so as to cause solar battery efficiency
The case where.So how to improve the precision aligned between grid line and selective emitter is that those skilled in the art are urgently to be solved
Problem.
Summary of the invention
The object of the present invention is to provide a kind of N-shaped preparation method of solar battery, can effectively improve grid line and selectivity
The precision aligned between emitter.
In order to solve the above technical problems, the present invention provides a kind of N-shaped preparation method of solar battery, which comprises
N-type doping layer and p-type doping layer is respectively set on two opposite surface of n-type substrate layer；
In the n-type doping layer surface, selective emitter is set；
In the n-type doping layer surface for being provided with the selective emitter, the first indicia patterns are set；
The second indicia patterns for being preset in Printing screen and first indicia patterns are aligned, by the Printing screen
It is aligned with the selective emitter；
By the Printing screen that is aligned with the selective emitter selective emitter surface setting with
First grid line of the selective emitter contraposition；And the second grid line is set in the p-type doping layer surface, the n is made
Type solar battery.
Optionally, described that in the n-type doping layer surface for being provided with the selective emitter, the first label figure is set
Case includes:
First label is etched in the n-type doping layer surface for being provided with the selective emitter by laser machine
Pattern.
Optionally, described to be etched by laser machine in the n-type doping layer surface for being provided with the selective emitter
First indicia patterns include:
By the laser machine in the n-type doping layer surface etching described first for being provided with the selective emitter
Indicia patterns；Wherein, the value range of the output power of the laser machine is 90W between 105W, including endpoint value.
Optionally, described to include: in n-type doping layer surface setting selective emitter
In the default grid region coat protective layer of the n-type doping layer surface；
The non-default grid region of the n-type doping layer surface is etched, by etching liquid to improve the non-default grid line
The selective emitter is made in the sheet resistance in region；
After the selective emitter is made, the protective layer is removed.
Optionally, the default grid region coat protective layer in the n-type doping layer surface includes:
Paraffin layer is coated in the default grid region of the n-type doping layer surface；
The removal protective layer includes:
Remove the paraffin layer.
Optionally, described after selective emitter is arranged in the n-type doping layer surface, the method also includes:
In the p-type doping layer backwards to the one side surface aluminum oxide layer of n-type substrate layer；
It is described to include: in the p-type doping layer surface the second grid line of setting
Second grid line is set backwards to one side surface of n-type substrate layer in the alumina layer；Wherein, described second
Grid line is electrically connected with the p-type doping layer.
Optionally, it is described the p-type doping layer backwards to the one side surface aluminum oxide layer of n-type substrate layer it
Afterwards, the method also includes:
The first silicon nitride layer is deposited in the n-type doping layer surface for being provided with the selective emitter, and described
Alumina layer deposits the second silicon nitride layer backwards to one side surface of n-type substrate layer；
It is described to include: in the first indicia patterns of the n-type doping layer surface for being provided with selective emitter setting
On first silicon nitride layer surface, first indicia patterns are set；
The Printing screen by aligning with the selective emitter is set on the selective emitter surface
It sets and includes: with the first grid line of selective emitter contraposition
By the Printing screen that is aligned with the selective emitter the setting of first silicon nitride layer surface with
First grid line of the selective emitter contraposition；Wherein, first grid line is electrically connected with the selective emitter；
It is described to include: backwards to one side surface of n-type substrate layer setting second grid line in the alumina layer
Second grid line is set backwards to one side surface of n-type substrate layer in second silicon nitride layer；Wherein, described
Second grid line is electrically connected with the p-type doping layer.
Optionally, first indicia patterns be following any one or any combination: cruciform pattern, circular pattern,
Triangle pattern.
Optionally, described that in the n-type doping layer surface for being provided with the selective emitter, the first label figure is set
Case includes:
Setting first mark in the printing blank area for the n-type doping layer surface for being provided with the selective emitter
Remember pattern.
Optionally, the printing blank area in the n-type doping layer surface for being provided with the selective emitter is set
Setting first indicia patterns includes:
Setting first mark in the printing blank area for the n-type doping layer surface for being provided with the selective emitter
Remember pattern；Wherein, the printing blank area is located at four apex angles of the N-shaped solar battery.
A kind of N-shaped preparation method of solar battery provided by the present invention, after the selective emitter that completes, meeting
The first indicia patterns are set in the n-type doping layer surface for being provided with selective emitter, and when the first grid line is arranged, it first will be pre-
The second indicia patterns and the first indicia patterns for being located at Printing screen align, thus by Printing screen and selective emitter pair
Position；The first grid line aligned again in the setting of selective emitter surface with selective emitter by the Printing screen aligned,
To realize the accurate positioning of selective emitter and the first grid line by above-mentioned first indicia patterns and the second indicia patterns, i.e.,
The precision aligned between grid line and selective emitter is improved by the first indicia patterns of setting and the second indicia patterns.
Detailed description of the invention
It, below will be to embodiment or existing for the clearer technical solution for illustrating the embodiment of the present invention or the prior art
Attached drawing needed in technical description is briefly described, it should be apparent that, the accompanying drawings in the following description is only this hair
Bright some embodiments for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is a kind of flow chart of N-shaped preparation method of solar battery provided by the embodiment of the present invention；
Fig. 2 is a kind of flow chart of specific N-shaped preparation method of solar battery provided by the embodiment of the present invention；
Fig. 3 is the flow chart of the specific N-shaped preparation method of solar battery of another kind provided by the embodiment of the present invention.
Specific embodiment
Core of the invention is to provide a kind of N-shaped preparation method of solar battery.In the prior art, selective emitter
Between the grid line being in contact with the selective emitter, aligning accuracy is usually insufficient, causes above-mentioned grid line usually can't be with
Heavily doped region in selective emitter is completely coincident, lower so as to cause solar battery efficiency.
And a kind of N-shaped preparation method of solar battery provided by the present invention, after the selective emitter that completes,
The first indicia patterns can be set in the n-type doping layer surface for being provided with selective emitter, and when the first grid line is arranged, first will
The second indicia patterns and the first indicia patterns for being preset in Printing screen align, thus by Printing screen and selective emitter pair
Position；The first grid line aligned again in the setting of selective emitter surface with selective emitter by the Printing screen aligned,
To realize the accurate positioning of selective emitter and the first grid line by above-mentioned first indicia patterns and the second indicia patterns, i.e.,
The precision aligned between grid line and selective emitter is improved by the first indicia patterns of setting and the second indicia patterns.
In order to enable those skilled in the art to better understand the solution of the present invention, with reference to the accompanying drawings and detailed description
The present invention is described in further detail.Obviously, described embodiments are only a part of the embodiments of the present invention, rather than
Whole embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work premise
Under every other embodiment obtained, shall fall within the protection scope of the present invention.
Referring to FIG. 1, Fig. 1 is a kind of flow chart of N-shaped preparation method of solar battery provided by the embodiment of the present invention.
Referring to Fig. 1, in embodiments of the present invention, the N-shaped preparation method of solar battery includes:
S101: n-type doping layer and p-type doping layer is respectively set on two opposite surface of n-type substrate layer.
Provided solar battery is specially N-shaped solar battery in embodiments of the present invention, accordingly in the present invention
Substrate used in embodiment is specially n-type substrate layer.Under normal conditions, n-type substrate layer is specially n-type silicon substrate layer, in n
There is more electronics in type substrate layer.Specific structure and material in relation to n-type substrate layer are referred to the prior art, at this
It is not specifically limited in inventive embodiments.
It in this step, can be respectively in two opposite surface setting n-type doping layers and p-type doping layer of n-type substrate layer.
Specifically, in embodiments of the present invention, it will usually first boron diffusion is carried out in the first surface of the n-type substrate layer, to be made
State p-type doping layer；Phosphorus diffusion is carried out in the n-type substrate layer second surface opposite with the first surface again, to be made
State n-type doping layer.Since the temperature of boron diffusion is usually above the temperature of phosphorus diffusion, so in general, can first carry out boron
Diffusion is for p-type doping layer, then carries out phosphorus diffusion preparation n-type doping layer.After preparing p-type doping layer, it will usually pass through list
The BSG (Pyrex) that face etching will diffuse into n-type substrate layer second surface is removed；After preparing n-type doping layer, it will usually
It will diffuse into closing for n-type substrate layer side by plasma etching to remove, prevent the generation of drain conditions.
It should be noted that in this step, it will usually form highly doped n-type doped layer, i.e. n by phosphorus diffusion+Doping
Layer, prepares selective emitter so as to subsequent.
S102: selective emitter is set in n-type doping layer surface.
In this step, selective emitter can be set in n-type doping layer.So-called selective emitter, that is, lightly doped district
With the alternately arranged emitter structure of heavily doped region, and following the first grid lines that n-type doping layer surface is arranged in can be with selectivity
Heavily doped region in emitter overlaps.Specific steps in relation to selective emitter is arranged will be done in following inventive embodiments
It is discussed in detail, is no longer repeated herein.
S103: the first indicia patterns are set in the n-type doping layer surface for being provided with selective emitter.
In this step, the first indicia patterns can be set in the n-type doping layer surface for being already provided with selective emitter.
Specifically, in this step, it will usually by laser machine in the n-type doping layer surface for being provided with the selective emitter
First indicia patterns are etched, i.e., the first label figure are etched in n-type doping layer surface by the laser that laser machine is issued
Case.Under normal conditions, the rated power of laser machine can be arranged in this step in 300W, and by the output power of laser machine and sets
Be set to the 30% to 35% of rated power, i.e., it under normal conditions, in this step can be by the value model of the output power of laser machine
Setting is enclosed in 90W between 105W, including endpoint value.It certainly, in embodiments of the present invention can be by the output power of laser machine
It is set as other numerical value, the specific output power in relation to laser machine in embodiments of the present invention and is not specifically limited.Certainly,
It can also adopt in this step and the first indicia patterns, related first label figure are set in n-type doping layer surface with other methods
The specific setting method of case is equally not specifically limited in embodiments of the present invention.
Above-mentioned first indicia patterns can be cruciform pattern, circular pattern, in triangle pattern any one or appoint
The composite pattern that meaning is composed；Multiple labels can be arranged in n-type doping layer surface in this step in so-called composite pattern
Pattern, and multiple indicia patterns collectively form above-mentioned first indicia patterns.Certainly, it also can be used in embodiments of the present invention
The pattern of his shape as the first indicia patterns, do not make in embodiments of the present invention by the concrete shape in relation to the first indicia patterns
It is specific to limit.
S104: will be preset in Printing screen the second indicia patterns and the first indicia patterns align, by Printing screen with
Selective emitter contraposition.
In embodiments of the present invention, the second indicia patterns, above-mentioned second label figure can be set on Printing screen surface in advance
Case can be the same or different with the first indicia patterns, but above-mentioned second indicia patterns need and the first indicia patterns
Match, so as to be realized between Printing screen and selective emitter by allowing the first indicia patterns and the second indicia patterns to align
Contraposition.
S105: it is sent out in the setting of selective emitter surface with selectivity by the Printing screen aligned with selective emitter
First grid line of emitter-base bandgap grading contraposition；And the second grid line is set in p-type doping layer surface, N-shaped solar battery is made.
In S104, the contraposition between Printing screen and selective emitter is had been realized in, in this step, can be passed through
The first grid line that the Printing screen aligned in S104 is aligned in the setting of selective emitter surface with selective emitter,
In the first grid line it is usually Chong Die with the heavily doped region in selective emitter.
In this step, also the second grid line can be set in p-type doping layer surface, N-shaped solar battery is made.It needs
It is bright, it is usually to first pass through Printing screen to mix in N-shaped during above-mentioned first grid line and the second grid line are specifically set
Diamicton surface printing corresponds to the electrocondution slurry of above-mentioned first grid line, and in corresponding above-mentioned second grid line of p-type doping layer surface printing
Electrocondution slurry；It is finally sintered above-mentioned electrocondution slurry, to form above-mentioned first grid line and the second grid line.Related specific screen printing
Brush is finally made the first grid line with sintering and the specific steps of the second grid line are referred to the prior art, in embodiments of the present invention
And it is not specifically limited.
A kind of N-shaped preparation method of solar battery provided by the embodiment of the present invention, in the selective emitter that completes
Later, the first indicia patterns can be set in the n-type doping layer surface for being provided with selective emitter, and the first grid line is being set
When, first the second indicia patterns for being preset in Printing screen and the first indicia patterns are aligned, thus by Printing screen and selectivity
Emitter contraposition；The aligned again by the Printing screen that align in the setting of selective emitter surface and selective emitter
One grid line, to realize the accurate of selective emitter and the first grid line by above-mentioned first indicia patterns and the second indicia patterns
Positioning improves the essence aligned between grid line and selective emitter by the first indicia patterns of setting and the second indicia patterns
Degree.The process that silk-screen printing is debugged repeatedly can be eliminated by the above method simultaneously, silk-screen printing has been reduced to a great extent
Time, while improving printing quality.
It will implement in following inventions in relation to a kind of specific steps of N-shaped preparation method of solar battery provided by the present invention
It is described in detail in example.
Referring to FIG. 2, Fig. 2 is a kind of specific N-shaped preparation method of solar battery provided by the embodiment of the present invention
Flow chart.
Referring to fig. 2, in embodiments of the present invention, the N-shaped preparation method of solar battery includes:
S201: n-type doping layer and p-type doping layer is respectively set on two opposite surface of n-type substrate layer.
Before this step, it will usually in the surface wool manufacturing of n-type substrate layer, to improve N-shaped solar battery to ambient light
The absorption of line.In this step, the n-type doping layer is specially highly doped n-type doped layer, i.e. n+Doped layer.This step its
Remaining content and S101 in foregoing invention embodiment are almost the same, and detailed content is described in detail in foregoing invention embodiment,
It is no longer repeated herein.
S202: in the default grid region coat protective layer of n-type doping layer surface.
In embodiments of the present invention, default grid region and non-default grid line can have been divided in advance in n-type doping layer surface
Region, wherein the first grid line can be arranged in the next steps on default grid region surface.It in this step, can be in the N-shaped
The default grid region coat protective layer of layer surface is adulterated, to protect the default grid line area of n-type doping layer surface by protective layer
Domain will not be etched.
Under normal conditions, in this step, it can be coated with by INK technology in the default grid region of n-type doping layer surface
Protective layer.Specifically, in this step paraffin layer can be coated in the default grid region of the n-type doping layer surface, that is, pass through
INK technology is coated with paraffin in the default grid region in n-type doping layer surface, to form above-mentioned protective layer.The cost of paraffin is very
It is low, it is easy to remove in the next steps, while can play a good protective effect.
S203: the non-default grid region of n-type doping layer surface is etched, by etching liquid to improve non-default grid region
Sheet resistance, selective emitter is made.
In this step, specifically entire n-type doping layer can be etched using etching liquid by SPH technology；Wherein by above-mentioned guarantor
The default grid region of sheath covering will not be etched, and the non-default grid region not covered by above-mentioned protective layer can be etched
Liquid etching.After the liquid that is etched etching, the sheet resistance of the non-default grid region in above-mentioned n-type doping layer can be increased, thus by originally
Highly doped n-type doped layer be changed into lightly doped n-type doped layer, so that selective emitter be made.It should be noted that above-mentioned
The specific ingredient of etching liquid is referred to the prior art, in embodiments of the present invention and is not specifically limited.
S204: after selective emitter is made, protective layer is removed.
In this step after selective emitter is made, need to remove above-mentioned protective layer, with exposing n-type doped layer table
The default grid region in face, so that the first grid line is arranged in default grid region in the next steps.Specifically, if in S202
The protective layer is paraffin layer, then in this step, after selective emitter is made, needing to remove paraffin layer.
S205: in p-type doping layer backwards to one side surface aluminum oxide layer of n-type substrate layer.
In this step, it will usually by ALD (atomic layer deposition) technology in p-type doping layer backwards to the n-type substrate layer
One side surface deposits one layer of alumina layer, to play the passivation to p-type doping layer by the alumina layer.The related oxidation
Aluminium layer is specifically passivated principle and in embodiments of the present invention and can not repeat them here with reference to the prior art.In this step, above-mentioned
The thickness of alumina layer is usually in 8nm or so.
S206: the first silicon nitride layer is deposited in the n-type doping layer surface for being provided with selective emitter, and in alumina layer
The second silicon nitride layer is deposited backwards to one side surface of n-type substrate layer.
In this step, it will usually by PECVD (plasma enhanced chemical vapor deposition) technology, in n-type doping layer
Surface deposits the first silicon nitride layer, and deposits the second silicon nitride layer on alumina layer surface.First silicon nitride layer and second
Silicon nitride layer equally plays passivation, and being specifically passivated principle in relation to first silicon nitride layer and the second silicon nitride layer can be with
With reference to the prior art, in embodiments of the present invention and do not repeat them here.
Certainly, in embodiments of the present invention, above-mentioned alumina layer, the first silicon nitride layer and the second silicon nitride layer can not
It is arranged in N-shaped solar battery, one of them can also be only set, any two therein, usual feelings can also be set
Setting above three film layer is required under condition in N-shaped solar battery.It should be noted that if being not provided with above-mentioned aluminium oxide
Layer, then above-mentioned second silicon nitride layer is then located at the p-type doping layer backwards to one side surface of n-type substrate layer.
S207: the first indicia patterns are set in the n-type doping layer surface for being provided with selective emitter.
Specifically, if when being provided with above-mentioned first silicon layer in embodiments of the present invention, it in this step specifically can be described
First indicia patterns are arranged in first silicon nitride layer surface.S103 base in remaining content and foregoing invention embodiment of this step
This is consistent, and detailed content is described in detail in foregoing invention embodiment, is no longer repeated herein.
S208: will be preset in Printing screen the second indicia patterns and the first indicia patterns align, by Printing screen with
Selective emitter contraposition.
This step and S104 in foregoing invention embodiment are almost the same, and detailed content has been done in foregoing invention embodiment in detail
It is thin to introduce, it is no longer repeated herein.
S209: it is sent out in the setting of selective emitter surface with selectivity by the Printing screen aligned with selective emitter
First grid line of emitter-base bandgap grading contraposition；And the second grid line is set in p-type doping layer surface, N-shaped solar battery is made.
If in this step, can specifically lead to specifically, being provided with above-mentioned first silicon nitride layer in embodiments of the present invention
It crosses with the Printing screen of selective emitter contraposition in the setting of first silicon nitride layer surface and the selectivity
First grid line of emitter contraposition；Wherein, first grid line is electrically connected with the selective emitter.Usual situation
Under, corrosive liquid ingredient is contained in the electrocondution slurry of the first silicon nitride layer surface printing by above-mentioned Printing screen, sintered
Cheng Zhonghui etches above-mentioned first silicon nitride layer, so that the first grid line made of sintering is in contact with selective emitter.
Specifically, if being only provided only with above-mentioned alumina layer in embodiments of the present invention without above-mentioned second nitridation is arranged
Then in this step specifically the second gate can be arranged backwards to one side surface of n-type substrate layer in the alumina layer in silicon layer
Line；Wherein, second grid line is electrically connected with the p-type doping layer.Under normal conditions, in the conduction of alumina layer surface printing
Contain corrosive liquid ingredient in slurry, above-mentioned alumina layer can be etched during the sintering process, so that second gate made of sintering
Line is in contact with p-type doping layer.
It, in this step, specifically can be specifically, if being provided with above-mentioned second silicon nitride layer in embodiments of the present invention
Second grid line is set backwards to one side surface of n-type substrate layer in second silicon nitride layer；Wherein, second grid line
It is electrically connected with the p-type doping layer.Under normal conditions, contain corrosive liquid in the electrocondution slurry of the second silicon nitride layer surface printing
Ingredient can etch above-mentioned second silicon nitride layer during the sintering process, so that the second grid line made of sintering and p-type doping layer
It is in contact.
A kind of N-shaped preparation method of solar battery provided by the embodiment of the present invention, especially by setting protective layer and
The step of etching, may be implemented the production of selective emitter, while pass through above-mentioned alumina layer, the first silicon nitride layer and the
Nitride silicon layer can effectively be passivated N-shaped solar battery, to effectively improve the conversion effect of N-shaped solar battery
Rate.
Specific production step in relation to above-mentioned first indicia patterns will be described in detail in following inventive embodiments.
Referring to FIG. 3, Fig. 3 is the specific N-shaped preparation method of solar battery of another kind provided by the embodiment of the present invention
Flow chart.
Referring to Fig. 3, in embodiments of the present invention, the N-shaped preparation method of solar battery includes:
S301: n-type doping layer and p-type doping layer is respectively set on two opposite surface of n-type substrate layer.
S302: selective emitter is set in n-type doping layer surface.
In embodiments of the present invention, S301 and S302 respectively with the basic phase of S101 and S102 in foregoing invention embodiment
Together, detailed content please refers to foregoing invention embodiment, is no longer repeated herein.
S303: the first indicia patterns are set in the printing blank area for the n-type doping layer surface for being provided with selective emitter.
In this step, specifically the first indicia patterns can be set in the printing blank area of n-type doping layer surface.So-called printing
The region of the first grid line will not be set in blank area in n-type doping layer surface.In printing white space setting above-mentioned first
Indicia patterns can impact to avoid structure of first indicia patterns to the first grid line, so as to avoid the first indicia patterns
Influence the collection of electric current in N-shaped solar battery.
Specifically, in this step, the printing blank area is usually located at four apex angles of the N-shaped solar battery.It is logical
In normal situation, N-shaped solar battery is rectangular configuration, which usually has there are four apex angle, and N-shaped solar energy
Four apex angles of battery are usually above-mentioned printing blank area.It should be noted that in this step, it can be in N-shaped solar-electricity
Preset indicia patterns are set in any number of apex angle in pond, is made up of the indicia patterns and above-mentioned first indicia patterns is set.
The first indicia patterns are set by the apex angle in N-shaped solar battery, the first indicia patterns can be reduced as far as possible to N-shaped too
The influence of positive energy battery surface, to avoid influence of first indicia patterns to N-shaped conversion efficiency of solar cell.
S304: will be preset in Printing screen the second indicia patterns and the first indicia patterns align, by Printing screen with
Selective emitter contraposition.
S305: it is sent out in the setting of selective emitter surface with selectivity by the Printing screen aligned with selective emitter
First grid line of emitter-base bandgap grading contraposition；And the second grid line is set in p-type doping layer surface, N-shaped solar battery is made.
In embodiments of the present invention, S304 and S305 respectively with the basic phase of S104 and S105 in foregoing invention embodiment
Together, detailed content please refers to foregoing invention embodiment, is no longer repeated herein.
A kind of N-shaped preparation method of solar battery provided by the embodiment of the present invention, it is empty in the printing of n-type doping layer surface
The first indicia patterns are arranged in white area, can impact to avoid structure of first indicia patterns to the first grid line, so as to avoid
First indicia patterns influence the collection of electric current in N-shaped solar battery.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with it is other
The difference of embodiment, same or similar part may refer to each other between each embodiment.
Professional further appreciates that, unit described in conjunction with the examples disclosed in the embodiments of the present disclosure
And algorithm steps, can be realized with electronic hardware, computer software, or a combination of the two, in order to clearly demonstrate hardware and
The interchangeability of software generally describes each exemplary composition and step according to function in the above description.These
Function is implemented in hardware or software actually, the specific application and design constraint depending on technical solution.Profession
Technical staff can use different methods to achieve the described function each specific application, but this realization is not answered
Think beyond the scope of this invention.
The step of method described in conjunction with the examples disclosed in this document or algorithm, can directly be held with hardware, processor
The combination of capable software module or the two is implemented.Software module can be placed in random access memory (RAM), memory, read-only deposit
Reservoir (ROM), electrically programmable ROM, electrically erasable ROM, register, hard disk, moveable magnetic disc, CD-ROM or technology
In any other form of storage medium well known in field.
Finally, it is to be noted that, herein, relational terms such as first and second and the like be used merely to by
One entity or operation are distinguished with another entity or operation, without necessarily requiring or implying these entities or operation
Between there are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant meaning
Covering non-exclusive inclusion, so that the process, method, article or equipment for including a series of elements not only includes that
A little elements, but also including other elements that are not explicitly listed, or further include for this process, method, article or
The intrinsic element of equipment.In the absence of more restrictions, the element limited by sentence "including a ...", is not arranged
Except there is also other identical elements in the process, method, article or apparatus that includes the element.
A kind of N-shaped preparation method of solar battery provided by the present invention is described in detail above.It answers herein
With a specific example illustrates the principle and implementation of the invention, the explanation of above example is only intended to help to manage
Solve method and its core concept of the invention.It should be pointed out that for those skilled in the art, not departing from
, can be with several improvements and modifications are made to the present invention under the premise of the principle of the invention, these improvement and modification also fall into this hair
In bright scope of protection of the claims.
Claims (10)
1. a kind of N-shaped preparation method of solar battery, which is characterized in that the described method includes:
N-type doping layer and p-type doping layer is respectively set on two opposite surface of n-type substrate layer；
In the n-type doping layer surface, selective emitter is set；
In the n-type doping layer surface for being provided with the selective emitter, the first indicia patterns are set；
The second indicia patterns for being preset in Printing screen and first indicia patterns are aligned, by the Printing screen and institute
State selective emitter contraposition；
By the Printing screen that is aligned with the selective emitter selective emitter surface setting with it is described
First grid line of selective emitter contraposition；And the second grid line is set in the p-type doping layer surface, the N-shaped is made too
Positive energy battery.
2. the method according to claim 1, wherein described in the n for being provided with the selective emitter
Type doping layer surface is arranged the first indicia patterns and includes:
The first label figure is etched in the n-type doping layer surface for being provided with the selective emitter by laser machine
Case.
3. according to the method described in claim 2, it is characterized in that, described be provided with the selectivity transmitting by laser machine
The n-type doping layer surface of pole etches first indicia patterns
First label is etched in the n-type doping layer surface for being provided with the selective emitter by the laser machine
Pattern；Wherein, the value range of the output power of the laser machine is 90W between 105W, including endpoint value.
4. the method according to claim 1, wherein described be arranged selectivity hair in the n-type doping layer surface
Emitter-base bandgap grading includes:
In the default grid region coat protective layer of the n-type doping layer surface；
The non-default grid region of the n-type doping layer surface is etched, by etching liquid to improve the non-default grid region
Sheet resistance, the selective emitter is made；
After the selective emitter is made, the protective layer is removed.
5. according to the method described in claim 4, it is characterized in that, the default grid line area in the n-type doping layer surface
Domain coat protective layer includes:
Paraffin layer is coated in the default grid region of the n-type doping layer surface；
The removal protective layer includes:
Remove the paraffin layer.
6. the method according to claim 1, wherein selectivity is arranged in the n-type doping layer surface described
After emitter, the method also includes:
In the p-type doping layer backwards to the one side surface aluminum oxide layer of n-type substrate layer；
It is described to include: in the p-type doping layer surface the second grid line of setting
Second grid line is set backwards to one side surface of n-type substrate layer in the alumina layer；Wherein, second grid line
It is electrically connected with the p-type doping layer.
7. according to the method described in claim 6, it is characterized in that, it is described in the p-type doping layer backwards to the n-type substrate
After one side surface aluminum oxide layer of layer, the method also includes:
The first silicon nitride layer is deposited in the n-type doping layer surface for being provided with the selective emitter, and in the oxidation
Aluminium layer deposits the second silicon nitride layer backwards to one side surface of n-type substrate layer；
It is described to include: in the first indicia patterns of the n-type doping layer surface for being provided with selective emitter setting
On first silicon nitride layer surface, first indicia patterns are set；
It is described by the Printing screen that is aligned with the selective emitter selective emitter surface setting with
First grid line of selective emitter contraposition includes:
By the Printing screen that is aligned with the selective emitter the setting of first silicon nitride layer surface with it is described
First grid line of selective emitter contraposition；Wherein, first grid line is electrically connected with the selective emitter；
It is described to include: backwards to one side surface of n-type substrate layer setting second grid line in the alumina layer
Second grid line is set backwards to one side surface of n-type substrate layer in second silicon nitride layer；Wherein, described second
Grid line is electrically connected with the p-type doping layer.
8. the method according to claim 1, wherein first indicia patterns are for following any one or arbitrarily
Combination: cruciform pattern, circular pattern, triangle pattern.
9. according to claim 1 to method described in any one of 8 claims, which is characterized in that described to be provided with the choosing
The first indicia patterns are arranged in the n-type doping layer surface of selecting property emitter
In the printing blank area for the n-type doping layer surface for being provided with the selective emitter, the first label figure is set
Case.
10. according to the method described in claim 9, it is characterized in that, described in the n for being provided with the selective emitter
The printing blank area of type doping layer surface is arranged first indicia patterns and includes:
In the printing blank area for the n-type doping layer surface for being provided with the selective emitter, the first label figure is set
Case；Wherein, the printing blank area is located at four apex angles of the N-shaped solar battery.
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Application publication date: 20181214 |