CN106356431A - Method for preparing solar battery - Google Patents
Method for preparing solar battery Download PDFInfo
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- CN106356431A CN106356431A CN201611085961.2A CN201611085961A CN106356431A CN 106356431 A CN106356431 A CN 106356431A CN 201611085961 A CN201611085961 A CN 201611085961A CN 106356431 A CN106356431 A CN 106356431A
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- silicon chip
- method preparing
- screen printing
- slurry
- described silicon
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- 238000000034 method Methods 0.000 title claims abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 44
- 239000010703 silicon Substances 0.000 claims abstract description 44
- 239000002002 slurry Substances 0.000 claims abstract description 20
- 238000007650 screen-printing Methods 0.000 claims abstract description 17
- 238000002161 passivation Methods 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 6
- 238000009792 diffusion process Methods 0.000 claims abstract description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 238000004513 sizing Methods 0.000 claims description 8
- 238000009766 low-temperature sintering Methods 0.000 claims description 5
- 235000008216 herbs Nutrition 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000005245 sintering Methods 0.000 abstract description 5
- 238000004140 cleaning Methods 0.000 abstract description 2
- 239000007888 film coating Substances 0.000 abstract 2
- 238000009501 film coating Methods 0.000 abstract 2
- 238000005516 engineering process Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 101100409194 Rattus norvegicus Ppargc1b gene Proteins 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 210000004127 vitreous body Anatomy 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The application discloses a method for preparing a solar battery. The method comprises the following steps of: performing cleaning and texturing, diffusion, etching, back passivation and film coating on a silicon wafer; then slotting the front surface of the silicon wafer after back passivation and film coating, wherein a slotted pattern formed in the front surface of the silicon wafer is matched with an electrode patter formed by screen printing; performing screen printing of a slurry in the slotted pattern; sintering the slurry within a temperature range of 700-750 DEG C, thereby obtaining a front electrode. The method for preparing the solar battery provided by the application is capable of avoiding pollution to battery pieces and environments, reducing defects of the battery pieces and improving the minority carrier lifetime and the conversion efficiency.
Description
Technical field
The invention belongs to photovoltaic apparatus manufacturing technology field, more particularly to a kind of method preparing solaode.
Background technology
High-efficiency battery technology becomes main trend at present, and perc is most important one kind in current commercial applications.perc
The flow process of battery is generally: cleaning and texturing (including polishing) → diffusion → etching → back of the body passivation plus pecvd plated film → laser back
Fluting → printing → sintering.For conventional batteries preparation, equally all it be unable to do without this link of high temperature sintering, but high temperature sintering
Easily cause pollution and minority carrier life time reduces, and, typically all rely on merely slurry to burn antireflective coating, thus realizing electricity
Prepared by pole, contain more volatile harmful material, also easily cause environmental pollution and hazard to person in slurry.
Content of the invention
For solving the above problems, the invention provides a kind of method preparing solaode, it can be avoided that to cell piece
With the pollution of environment, reduce the defect of cell piece, improve minority carrier life time and conversion efficiency.
The present invention provide a kind of method preparing solaode, including silicon chip is carried out making herbs into wool, diffusion, quarter
Erosion, back of the body passivation and plated film, after described back of the body passivation and plated film, also include:
In the front of described silicon chip fluting, wherein, Grooving patterns and the electrode of silk screen printing that described front side of silicon wafer is formed
Figure matches；
Screen printing sizing agent in described Grooving patterns；
Within the temperature range of 700 DEG C～750 DEG C, described slurry is sintered, obtains front electrode.
Preferably, in the above-mentioned method preparing solaode,
Slot and be in the described front in described silicon chip:
Slotted in the front of described silicon chip using laser.
Preferably, in the above-mentioned method preparing solaode,
Described in described Grooving patterns screen printing sizing agent be:
Silk screen printing low-temperature sintering slurry in described Grooving patterns.
Preferably, in the above-mentioned method preparing solaode,
Slot and be in the described front in described silicon chip:
Open up the groove that width range is 35 μm to 45 μm in the front of described silicon chip.
Preferably, in the above-mentioned method preparing solaode,
Slot and be in the described front in described silicon chip:
The described front in described silicon chip opens up the groove that depth bounds is 75nm to 85nm.
Preferably, in the above-mentioned method preparing solaode,
Slot and be in the described front in described silicon chip:
Open up 100 to 110 thin grid lines and 3 to 5 main gate line in the front of described silicon chip.
The above-mentioned method preparing solaode being provided by foregoing description, the present invention, due to blunt in the described back of the body
Also include after change and plated film: in the front of described silicon chip fluting, wherein, Grooving patterns and silk screen that described front side of silicon wafer is formed
The electrode pattern of printing matches；Screen printing sizing agent in described Grooving patterns；Within the temperature range of 700 DEG C～750 DEG C,
Described slurry is sintered, obtains front electrode, this technique does not need a large amount of conventional slurry containing vitreous body to burn
sinx, therefore, it is possible to avoid the pollution to cell piece and environment, reduce the defect of cell piece, improve minority carrier life time and conversion effect
Rate.
Brief description
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
Have technology description in required use accompanying drawing be briefly described it should be apparent that, drawings in the following description be only this
Inventive embodiment, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing providing obtains other accompanying drawings.
Fig. 1 provide for the embodiment of the present application the first prepare solaode method schematic diagram.
Specific embodiment
The core concept of the present invention is to provide a kind of method preparing solaode, it can be avoided that to cell piece and ring
The pollution in border, reduces the defect of cell piece, improves minority carrier life time and conversion efficiency.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation description is it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of not making creative work
Embodiment, broadly falls into the scope of protection of the invention.
The first of the embodiment of the present application offer prepares the method for solaode as shown in figure 1, Fig. 1 is the application enforcement
The first of example offer prepares the schematic diagram of the method for solaode.The method comprises the steps:
S1: silicon chip is carried out with making herbs into wool, diffusion, etching, back of the body passivation and plated film；
These are the conventional steps preparing perc battery, specifically, form pyramid using process for etching in silicon chip surface
Structure, has excellent sunken light effect, then diffuses to form pn-junction, and then etching removes flash trimming knot, back of the body knot and surface oxide layer, so
Overleaf grow alumina passivation layer and silicon nitride stack structure afterwards.
S2: in the front of described silicon chip fluting, wherein, Grooving patterns and the electricity of silk screen printing that described front side of silicon wafer is formed
Pole figure shape matches；
It should be noted that the silicon nitride film of routine has higher stability, merely will by slurry in prior art
This silicon nitride film burns, and temperature is higher, and design temperature reaches 900 DEG C, and is that slice, thin piece integrally through high temperature, and will be adopted
Silicon chip can be caused to damage with the mode of this high-temperature process, increase defect, reduce minority carrier life time, reduce battery efficiency.This reality
Apply example to slot in advance, Grooving patterns are consistent with producing line screen-printed image coupling.In this case, due to electrode contact locations
There is no silicon nitride, and silver-colored silicon alloy phase temperature has been 840 DEG C, thus can reduce by 100 DEG C about of sintering temperature, this is favourable
In the damage avoiding silicon chip.
S3: screen printing sizing agent in described Grooving patterns；
Since it should be noted that previous step is slotted in advance, then this step just can adopt and not contain burn-through
The slurry of the material of silicon nitride film, reduces the damage to silicon chip, also avoids introducing more impurity.
S4: within the temperature range of 700 DEG C～750 DEG C, described slurry is sintered, obtains front electrode.
It should be noted that slotting just because of prior, therefore can be sintered in the range of lower temperature, it is to avoid
The negative effect that high temperature brings.
By foregoing description, the first method of preparing solaode above-mentioned that the embodiment of the present application provides, by
In also including after described back of the body passivation and plated film: in the front of described silicon chip fluting, wherein, what described front side of silicon wafer was formed opens
Groove figure is matched with the electrode pattern of silk screen printing；Screen printing sizing agent in described Grooving patterns；At 700 DEG C～750 DEG C
Within the temperature range of, described slurry is sintered, obtains front electrode, this technique does not need a large amount of routines containing vitreous body
Slurry is burning sinx, therefore, it is possible to avoid the pollution to cell piece and environment, reduce the defect of cell piece, improve minority carrier life time
And conversion efficiency.
The second method of preparing solaode that the embodiment of the present application provides, be above-mentioned the first prepare solar energy
On the basis of the method for battery, also include following technical characteristic:
In the above-mentioned method preparing solaode,
Slot and be in the described front in described silicon chip:
Slotted in the front of described silicon chip using laser.
It should be noted that inductivity fluting is carried out to the antireflection film in front using laser, for the silk of operation below
Wire mark brush provides the region of a filled therewith, burns the technology of antireflective coating such that it is able to substitute high temperature, with producing line technique
Prepare, suitable scale volume production.By lbg, it is that slurry provides a kind of constraint, improves slurry vertical continuity, reduce
Disconnected grid probability.
The embodiment of the present application provide the third method preparing solaode, be above-mentioned the first prepare solar energy
On the basis of the method for battery, also include following technical characteristic:
Described in described Grooving patterns screen printing sizing agent be:
Silk screen printing low-temperature sintering slurry in described Grooving patterns.
It should be noted that used herein of low-temperature sintering slurry, can not contain for burning sinxVitreous body.
The 4th kind of method preparing solaode that the embodiment of the present application provides, is to prepare solar energy in above-mentioned second
On the basis of the method for battery, also include following technical characteristic:
Slot and be in the described front in described silicon chip:
Open up the groove that width range is 35 μm to 45 μm in the front of described silicon chip.
It should be noted that it becomes possible to ensure to open sin after the groove opening up out this width rangexAntireflective coating is protected
Sheath.It is easy in follow-up process make electrode wherein.
The 5th kind of method preparing solaode that the embodiment of the present application provides, is to prepare solar energy at above-mentioned 4th kind
On the basis of the method for battery, also include following technical characteristic:
Slot and be in the described front in described silicon chip:
The described front in described silicon chip opens up the groove that depth bounds is 75nm to 85nm.
It should be noted that this depth ensure that the sin removing electrode position completelyxAntireflective coating it is ensured that its not
The making of subsequent electrode can be affected.
The embodiment of the present application provide the 6th kind of method preparing solaode, be above-mentioned the first to the 5th kind make
In the method for standby solaode on the basis of any one, also include following technical characteristic:
Slot and be in the described front in described silicon chip:
Open up 100 to 110 thin grid lines and 3 to 5 main gate line in the front of described silicon chip.
It should be noted that fluting design parameter suitably can adjust according to diffused sheet resistance.It is 95 that this programme is based on sheet resistance value
The cell piece of ± 5ohm/, if sheet resistance raises, thin grid radical increases, otherwise then reduces.
In sum, lbg front can be realized using said method and open electrode contact passage, in conjunction with low temperature
Low temperature sintering technology realized by slurry.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses the present invention.
Multiple modifications to these embodiments will be apparent from for those skilled in the art, as defined herein
General Principle can be realized without departing from the spirit or scope of the present invention in other embodiments.Therefore, the present invention
It is not intended to be limited to the embodiments shown herein, and be to fit to and principles disclosed herein and features of novelty phase one
The scope the widest causing.
Claims (6)
1. a kind of method preparing solaode, including silicon chip is carried out making herbs into wool, diffusion, etching, the back of the body passivation and plated film,
It is characterized in that, after described back of the body passivation and plated film, also include:
In the front of described silicon chip fluting, wherein, Grooving patterns and the electrode pattern of silk screen printing that described front side of silicon wafer is formed
Match；
Screen printing sizing agent in described Grooving patterns；
Within the temperature range of 700 DEG C～750 DEG C, described slurry is sintered, obtains front electrode.
2. the method preparing solaode according to claim 1 it is characterised in that
Slot and be in the described front in described silicon chip:
Slotted in the front of described silicon chip using laser.
3. the method preparing solaode according to claim 1 it is characterised in that
Described in described Grooving patterns screen printing sizing agent be:
Silk screen printing low-temperature sintering slurry in described Grooving patterns.
4. the method preparing solaode according to claim 2 it is characterised in that
Slot and be in the described front in described silicon chip:
Open up the groove that width range is 35 μm to 45 μm in the front of described silicon chip.
5. the method preparing solaode according to claim 4 is it is characterised in that the described front in described silicon chip
Slot and be:
The described front in described silicon chip opens up the groove that depth bounds is 75nm to 85nm.
6. the method preparing solaode according to any one of claim 1-5 it is characterised in that
Slot and be in the described front in described silicon chip:
Open up 100 to 110 thin grid lines and 3 to 5 main gate line in the front of described silicon chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611085961.2A CN106356431A (en) | 2016-11-30 | 2016-11-30 | Method for preparing solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611085961.2A CN106356431A (en) | 2016-11-30 | 2016-11-30 | Method for preparing solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106356431A true CN106356431A (en) | 2017-01-25 |
Family
ID=57863038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611085961.2A Pending CN106356431A (en) | 2016-11-30 | 2016-11-30 | Method for preparing solar battery |
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| Country | Link |
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| CN (1) | CN106356431A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108039375A (en) * | 2017-10-31 | 2018-05-15 | 泰州隆基乐叶光伏科技有限公司 | Finger-like intersects the preparation method of back contacts solar cell |
| CN109304950A (en) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | Screen printing process in silicon wafer groove |
| CN110455664A (en) * | 2019-09-20 | 2019-11-15 | 浙江晶科能源有限公司 | A kind of front electrode of solar battery weight in wet base measuring device and measuring method |
| WO2024060927A1 (en) * | 2022-09-21 | 2024-03-28 | 通威太阳能(眉山)有限公司 | Double-sided solar cell and manufacturing method therefor |
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| US20050268963A1 (en) * | 2004-02-24 | 2005-12-08 | David Jordan | Process for manufacturing photovoltaic cells |
| CN102185020A (en) * | 2011-03-29 | 2011-09-14 | 中国科学院宁波材料技术与工程研究所 | Manufacturing method for front electrode of crystalline silicon solar battery |
| CN102623564A (en) * | 2012-03-30 | 2012-08-01 | 中山大学 | Method for producing crystalline silicon solar cell with laser grooved positive electrode |
-
2016
- 2016-11-30 CN CN201611085961.2A patent/CN106356431A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050268963A1 (en) * | 2004-02-24 | 2005-12-08 | David Jordan | Process for manufacturing photovoltaic cells |
| CN102185020A (en) * | 2011-03-29 | 2011-09-14 | 中国科学院宁波材料技术与工程研究所 | Manufacturing method for front electrode of crystalline silicon solar battery |
| CN102623564A (en) * | 2012-03-30 | 2012-08-01 | 中山大学 | Method for producing crystalline silicon solar cell with laser grooved positive electrode |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109304950A (en) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | Screen printing process in silicon wafer groove |
| CN109304950B (en) * | 2017-07-26 | 2021-06-25 | 天津环鑫科技发展有限公司 | Screen printing process in silicon wafer groove |
| CN108039375A (en) * | 2017-10-31 | 2018-05-15 | 泰州隆基乐叶光伏科技有限公司 | Finger-like intersects the preparation method of back contacts solar cell |
| CN110455664A (en) * | 2019-09-20 | 2019-11-15 | 浙江晶科能源有限公司 | A kind of front electrode of solar battery weight in wet base measuring device and measuring method |
| WO2024060927A1 (en) * | 2022-09-21 | 2024-03-28 | 通威太阳能(眉山)有限公司 | Double-sided solar cell and manufacturing method therefor |
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Application publication date: 20170125 |