CN107404290A - The LDMOS power amplifiers with self-powered function of internet of things oriented - Google Patents

The LDMOS power amplifiers with self-powered function of internet of things oriented Download PDF

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Publication number
CN107404290A
CN107404290A CN201710556409.5A CN201710556409A CN107404290A CN 107404290 A CN107404290 A CN 107404290A CN 201710556409 A CN201710556409 A CN 201710556409A CN 107404290 A CN107404290 A CN 107404290A
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ldmos
ldmos power
self
internet
tubes
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CN107404290B (en
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廖小平
陈友国
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Southeast University
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Southeast University
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/38—Cooling arrangements using the Peltier effect
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

Abstract

A kind of LDMOS power amplifiers with self-powered function of internet of things oriented provided by the invention, include LDMOS power tubes, resistance, electric capacity, mu balanced circuit and the bulky capacitor with heat to electricity conversion function of internet of things oriented.Signal is input to the grid of LDMOS power tubes by capacitance C1, and resistance R1 and R2 form biasing, and the source electrode of LDMOS power tubes is grounded by R3, and the signal after amplification is exported by the drain electrode of LDMOS power tubes.LDMOS power tubes include several LDMOS single tubes, there is layer of silicon dioxide insulating barrier on each LDMOS single tubes, on the insulating layer 12 thermocouples are respectively made around LDMOS source and drain grid, connected with metal connecting line, leave two thermocouple probes as Seebeck voltage output stage "+" pole and " " pole." " electrode of Seebeck voltage is grounded, "+" electrode connects mu balanced circuit and bulky capacitor.According to Seebeck effects, Waste Heat Recovery caused by work is converted into electric energy, carries out power storage and self-powered, service life is extended while strengthening heat dispersion.

Description

The LDMOS power amplifiers with self-powered function of internet of things oriented
Technical field
The present invention relates to microelectromechanical systems (MEMS) technical field, and in particular to a kind of internet of things oriented has The LDMOS power amplifiers of self-powered function.LDMOS represents LDMOS.
Background technology
It is increasing for the demand of radio frequency amplifier with the fast development of the information industries such as Internet of Things Network Communication, and penetrate Frequency transmitting-receiving subassembly can produce a large amount of thermal losses, especially power amplifier section at work caused by energy consumption account for total energy consumption 60% or so.
At present, most of electronic equipment all uses battery powered, wherein, the gravimetric energy density and volume of lithium battery Energy density is all very big, becomes the most widely used power supply.However, the storage energy of lithium battery is extremely limited, the life-span It is limited, inevitably needs to change battery using lithium battery power supply, it is therefore desirable to find a kind of new power technology Instead of lithium battery.
In recent years, thermoelectric energy collection technique structure optimization and pyroelectric material performance etc. continue to develop, make its by Gradually possess higher heat to electricity conversion ability, and be used widely in fields such as space flight.As long as thermoelectric energy collection technique has temperature Difference is present, and just can convert thermal energy into electric energy, belong to sustainable green energy resource.
The present invention be having based on SOI technology and MEMS surface micromachined technological designs internet of things oriented from The LDMOS power amplifiers of function of supplying power, collection of energy are realized with self-powered, this is a kind of applies in Internet of Things communication LDMOS power amplifiers.
The content of the invention
It is an object of the invention to provide a kind of LDMOS power amplifiers with self-powered function of internet of things oriented, The work of radio frequency LDMOS power tubes produces substantial amounts of used heat, and according to Seebeck effects, thermocouple realizes that thermoelectric energy is collected, enhancing Its heat dispersion, output Seebeck voltage to mu balanced circuit and bulky capacitor, energy stores are carried out, export steady dc voltage, Electric energy is provided for amplifier, realizes the sustainable of self-powered and green energy resource.
The present invention adopts the following technical scheme that to achieve the above object：
A kind of LDMOS power amplifiers with self-powered function of internet of things oriented, including：Internet of things oriented has LDMOS power tubes, resistance, electric capacity, mu balanced circuit and the bulky capacitor rechargeable battery of heat to electricity conversion function；Signal passes through capacitance C1 is input to the grid of LDMOS power tubes, and resistance R1 and resistance R2 are respectively the upper below-center offset of grid, the source of LDMOS power tubes Pole is grounded by resistance R3, and the drain electrode of LDMOS power tubes is connected to VDD by resistance R4, and the signal after amplification passes through LDMOS power The drain electrode output of pipe, the drain electrode of LDMOS power tubes connect load resistance R5, mu balanced circuit and bulky capacitor charging by capacitance C2 Battery meets VDD；The LDMOS power tubes include several LDMOS single tubes；The LDMOS single tubes are using SOI as substrate, on substrate Provided with p-well, N- drift regions, source region, drain region, source region electrode, drain region electrode, gate oxide；The source region electrode, drain region electrode, The surrounding of gate oxide is respectively equipped with insulating barrier；Several are respectively equipped with the insulating barrier of the grid source-drain area of the LDMOS single tubes Thermocouple；The thermocouple includes metal Al types thermoelectric arm and polysilicon N-type thermoelectric arm, and with metal connecting line by above-mentioned thermoelectric arm Series connection, form thermocouple；Connected by metal connecting line between the thermocouple of the grid source-drain area of the LDMOS single tubes, and stayed respectively Go out 2 thermocouple probes；The thermocouple probes of the grid source-drain area of several LDMOS single tubes are connected with metal connecting line, leave two Output stage "+" pole and "-" pole of the individual thermocouple probes as Seebeck voltage, "+" pole connect mu balanced circuit and bulky capacitor charging electricity Pond, "-" pole ground connection.
Further, the gate oxide, source region electrode, the left and right sides of drain region electrode respectively put 4 thermocouples, upper and lower sides Respectively put 2 thermocouples.
Further, the Seebeck pressure difference of output connects mu balanced circuit and bulky capacitor rechargeable battery, can carry out power storage, By detecting the size of storing electricity, so as to detect the size of heat-dissipating power.
The distribution of temperature when further, for LDMOS normal works is different, and thermoelectricity is realized according to Seebeck effects Conversion, used heat is collected, is advantageous to radiate, so as to improve reliability, extends its service life.
Further, caused Seebeck voltage is output to mu balanced circuit and bulky capacitor rechargeable battery, exports the straight of stabilization Voltage is flowed, is connected to the power supply of amplifier, is realized self-powered and green energy resource sustainable.
Further, the material of the insulating barrier is silica.
The present invention has the advantages that：
1. the principle, simple in construction of the LDMOS power amplifiers with self-powered function of the internet of things oriented of the present invention, It is easily achieved using existing SOI technology and MEMS surface micromachineds；
2. the LDMOS power amplifiers with self-powered function of the internet of things oriented of the present invention are according to Seebeck effect, Direct conversion of the heat energy to electric energy is realized, used heat is effectively reclaimed, enhances its heat dispersion；
3. the Seebeck voltage of the output of the LDMOS power amplifiers with self-powered function of the internet of things oriented of the present invention By mu balanced circuit, steady dc voltage can be exported, as power supply, electric energy itself is provided for LDMOS power amplifiers, it is real Showed power amplifier self-powered and green energy resource it is sustainable；
4. the LDMOS power amplifiers with self-powered function of the internet of things oriented of the present invention are according to Seebeck effect, The Seebeck voltage of M times of single tube is exported, its size can be controlled by changing the size of single tube number M values, can also be led to Cross bulky capacitor and carry out power storage；
Brief description of the drawings
Fig. 1 is the schematic diagram of the LDMOS power amplifiers with self-powered function of internet of things oriented of the present invention；
Fig. 2 is the top view of the LDMOS power amplifiers with self-powered function of internet of things oriented of the present invention；
Fig. 3 be internet of things oriented of the present invention the LDMOS power amplifiers with self-powered function P-P ' to section Figure；
Fig. 4 be internet of things oriented of the present invention the LDMOS power amplifiers with self-powered function Q-Q ' to section Figure；
Fig. 5 is that the thermocouple in the LDMOS power amplifiers with self-powered function of internet of things oriented of the present invention is put Top view (i.e. Fig. 3 thermocouple 14).
Figure includes：SOI substrate 1, p-well 2, N- drift regions 3, gate oxide 4, gate polysilicon 5, source region 6, drain region 7, thermoelectricity Even metal Al types thermoelectric arm 8, the polysilicon N-type thermoelectric arm 9 of thermocouple, metal connecting line 10, silicon dioxide layer of protection 11, source electrode Electrode 12, drain electrode 13, thermocouple 14, mu balanced circuit and bulky capacitor rechargeable battery 15.
Embodiment
The embodiment of the present invention is described further below in conjunction with the accompanying drawings.
Referring to Fig. 1-5, the present invention proposes a kind of LDMOS power amplifications with self-powered function of internet of things oriented Device.The LDMOS power amplifiers mainly include：The LDMOS power tubes with heat to electricity conversion function of internet of things oriented, resistance, Electric capacity, mu balanced circuit and bulky capacitor rechargeable battery etc., and LDMOS power tubes are made up of M LDMOS and 36M thermocouple.Its In, LDMOS single tubes select SOI to realize there is thermoelectric energy by SOI technology and MEMS surface micromachineds as substrate 1 The LDMOS power tubes of translation function.Face makes the buffer oxide layer that a layer thickness is 20nm on substrate 1, to prevent boron ion Injection causes to damage, then with 3.0 × 1012cm-2Dosage carry out the injection of p-well 2 boron ion, remove buffer oxide with BOE afterwards Layer；One layer of 20nm buffer oxide layer is prepared at 950 DEG C, with 4.0 × 1012cm-2Dosage carry out phosphonium ion injection, obtain N- drift regions 3, remove buffer oxide layer with BOE afterwards；One layer of 20nm oxide layer is made for isolation (LOCOS) thermal oxide, then LPCVD makes one layer of 100nm silicon nitride, and active area photoetching uses dry etching silicon nitride, removes oxide layer with BOE afterwards；With Dry/wet/xeothermic oxidizing process prepares LOCOS, thickness 400nm, and 100nm silicon nitrides are removed with H3PO, and 20nm oxidations are removed with BOE Layer；The gate oxide 4 that a layer thickness is 20nm is prepared, the gate polysilicon 5 that a layer thickness is 300nm is being deposited thereon, is carrying out phosphorus Diffusion, using dry etching gate polysilicon；Then boron ion injection is carried out, dosage is 1.5 × 1014cm-2, heat to grid polycrystalline Promoted below silicon；Source and drain injects arsenic, and dosage is 5 × 1015cm-2, obtain source region 6 and drain region 7, then sputter respectively on source and drain A layer thickness is 800nm source electrode 12 and drain electrode 13, and traditional LDMOS is made.
A layer insulating 11 is made on LDMOS, to isolate LDMOS and thermocouple, avoids short circuit, to aoxidize Thermocouple is made on silicon, the material of insulating barrier is silica.According to shown in Fig. 5, in grid region, surrounding symmetrically makes 12 heat Galvanic couple, specifically, 4 thermocouples are respectively put around gate electrode or so and respectively put 2 thermocouples up and down, thermocouple is by metal Al Type thermoelectric arm 8 and polysilicon N-type thermoelectric arm 9 are formed, and two kinds of thermoelectric arms are connected by metal connecting line Al 10, and series connection thermocouple is simultaneously Draw thermocouple probes of two electrodes in lower section as grid region.Similarly, 12 thermocouples are respectively made in source-drain area surrounding, reserved The electrode of lower section two, according to the thermocouple probes that M LDMOS single tube is connected shown in Fig. 2, two electrodes are left as Seebeck electricity The output stage "+" pole and "-" pole of pressure, while the source and drain grid of M LDMOS single tube are each connected into a large-sized LDMOS Power tube.Signal is input to the grid of LDMOS power tubes by capacitance C1, and resistance R1 and R2 are respectively the inclined up and down of grid Put, the source electrode of LDMOS power tubes is grounded by R3, and the drain electrode of LDMOS power tubes is connected to VDD by R4, and the signal after amplification leads to The drain electrode output of LDMOS power tubes is crossed, the drain electrode of LDMOS power tubes connects load resistance R5, mu balanced circuit by capacitance C2 VDD is met with bulky capacitor rechargeable battery.The "-" electrode of Seebeck voltage is grounded, "+" electrode connects mu balanced circuit and bulky capacitor, will Seebeck voltage is input to mu balanced circuit and bulky capacitor, carries out power storage, exports steady dc voltage, is LDMOS power Amplifier provides electric energy.
The LDMOS power amplifier preparation methods with self-powered function of the internet of things oriented of the present invention are as follows：
1) SOI bases P-type silicon substrate 1, doping concentration 10 are prepared15cm-3；
2) buffer oxide layer, thickness 20nm, 950 DEG C of oxidizing temperature, time 28min are prepared for p-well ion implanting；
3) p-well boron ion is injected, and dosage is 3.0 × 1012, then remove buffer oxide layer, time 20s with BOE；
4) buffer oxide layer is prepared for N- layer ion implantings, the injection of thickness 20nm, N- layer phosphonium ion, is removed with BOE slow Oxide layer is rushed, obtains N- drift regions 3；
5) one layer of 20nm oxide layer is made for isolation (LOCOS) thermal oxide, then LPCVD makes one layer of 100nm silicon nitride；
6) active area photoetching, using dry etching silicon nitride, time 1.5min, oxide layer is removed with BOE, the time is 20s；
7) LOCOS, thickness 400nm are prepared with dry/wet/xeothermic oxidizing process, temperature is 1000 DEG C, time 2 h, is used H3PO4100nm silicon nitrides are removed, 20nm oxide layers are removed with BOE；
8) gate oxide 4, thickness 20nm are prepared, temperature is 950 DEG C, time 28min；
9) gate polysilicon 5, thickness 300nm are deposited, temperature is 620 DEG C, time 70min, then carries out phosphorus diffusion, temperature Spend for 950 DEG C, time 30min；
10) photoetching gate polysilicon, using dry etching gate polysilicon, time 35s；
11) boron ion is injected, and dosage is 1.5 × 1014cm-2, heating to promoting below gate polysilicon, temperature is 950 DEG C, Time is 20min, obtains p-well 2.
12) source and drain N+ ion implantings, dosage are 5 × 1015cm-2Obtain source region 6 and drain region 7；
13) low-temperature oxidation, contact zone opening is etched, obtains insulating barrier 11；
14) one layer of 800nm metallic aluminium is sputtered as source electrode 12 and drain electrode 13；
15) insulating barrier 11 is chemically-mechanicapolish polished, in case making thermocouple；
16) photoresist is coated near grid, makes N-type thermoelectric arm window by lithography；
17) LPCVD grows one layer of N+ polysilicon, and its doping concentration and thickness are respectively 5 × 1016cm-3And 0.7um, formed The polysilicon N-type thermoelectric arm 9 of thermocouple；
18) evaporation growth Al, anti-carves Al, etches metallic pattern, forms another metal Al types thermoelectric arm 8 of thermocouple；
19) photoresist is coated, retains specific pattern photoresist, uses H3PO4:CH3COOH:HNO3=100:10:1 anti-carves Al, Temperature is 50 DEG C, time 3min, and N-type polycrystalline silicon thermoelectric arm 9 is connected with metal Al types thermoelectric arm 8 with metal connecting line Al 10 Get up, form thermocouple；
20) photoresist is removed；
21) 2 extraction electrodes of grid region thermocouple are made；
22) repeat step 16 near source-drain electrode) -- 21), make thermocouple as shown in Figure 5；
23) evaporation of aluminum line, according to connection source electrode, grid, drain electrode and thermocouple probes as shown in Figure 2, two electrodes are left Output stage as Seebeck pressure difference.
24) "-" electrode is grounded, and "+" electrode connects mu balanced circuit and bulky capacitor rechargeable battery 15, exports galvanic current Pressure, electric energy is provided for amplifier；
25) according to shown in Fig. 2, connection electric capacity, resistance and LDMOS power tubes, the LDMOS work(with self-powered function is obtained Rate amplifier.
Distinguish whether be the structure standard it is as follows：
The LDMOS power amplifiers with self-powered function of the internet of things oriented of the present invention include the tool of internet of things oriented There are LDMOS power tubes, amplifier circuit, mu balanced circuit and bulky capacitor rechargeable battery of heat to electricity conversion function etc..Traditional Layer of silicon dioxide layer is grown on LDMOS, as the reference plane for making thermocouple, is respectively made on the source and drain grid of M LDMOS single tube Make 12 thermocouples being made up of metal Al types thermoelectric arm and polysilicon N-type thermoelectric arm, connected, left with metal connecting line aluminium Two electrodes are as Seebeck voltage output stage "+" pole and "-" pole.Signal is input to LDMOS power tubes by capacitance C1 Grid, resistance R1 and R2 form biasing, and the source electrode of LDMOS power tubes is grounded by R3, and the signal after amplification passes through LDMOS work( The drain electrode output of rate pipe；The "-" electrode of Seebeck voltage is grounded, "+" electrode connects mu balanced circuit and bulky capacitor.According to Seebeck effects, LDMOS power amplifiers itself will work caused by Waste Heat Recovery be converted into electric energy, carry out power storage And self-powered, extend service life while strengthening its heat dispersion.
Meet that the structure of conditions above is considered as the LDMOS power with self-powered function of the internet of things oriented of the present invention Amplifier.
Described above is only the preferred embodiment of the present invention, it should be pointed out that：For the ordinary skill people of the art For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should It is considered as protection scope of the present invention.

Claims (7)

1. a kind of LDMOS power amplifiers with self-powered function of internet of things oriented, it is characterized in that：Including：With thermoelectricity LDMOS power tubes, resistance, electric capacity, mu balanced circuit and the bulky capacitor rechargeable battery of translation function；Signal is defeated by capacitance C1 Enter the grid to LDMOS power tubes, resistance R1 and resistance R2 are respectively the upper below-center offset of the grid of LDMOS power tubes, LDMOS work( The source electrode of rate pipe is grounded by resistance R3, and the drain electrode of LDMOS power tubes is connected to VDD by resistance R4, and the signal after amplification passes through The drain electrode output of LDMOS power tubes, the drain electrodes of LDMOS power tubes meet load resistance R5 by capacitance C2, mu balanced circuit and Bulky capacitor rechargeable battery meets VDD；The LDMOS power tubes with heat to electricity conversion function produce Seebeck voltage, Seebeck electricity The output stage "+" pole of pressure connects mu balanced circuit and bulky capacitor rechargeable battery, "-" pole ground connection.
2. a kind of LDMOS power amplifiers with self-powered function of internet of things oriented according to claim 1, it is special Sign is：The LDMOS power tubes include several LDMOS single tubes；The LDMOS single tubes are using SOI as substrate (1), on substrate (1) Provided with p-well (2), N- drift regions (3), source region (6), drain region (7), source region electrode (12), drain region electrode (13), gate oxide (4)； The source region electrode (12), drain region electrode (13), the surrounding of gate oxide (4) are respectively equipped with insulating barrier (11)；The source region electricity Pole (12), drain region electrode (13), gate oxide (4) surrounding insulating barrier (11) on be respectively equipped with several thermocouples, thermocouple Between connected by metal connecting line (10), and leave two thermocouple probes as the output stage "+" pole of Seebeck voltage and "-" Pole, "+" pole connect mu balanced circuit and bulky capacitor rechargeable battery (15), "-" pole ground connection；The thermocouple is by metal Al type thermoelectric arms (8) it is in series with polysilicon N-type thermoelectric arm (9) by metal connecting line (10).
3. a kind of LDMOS power amplifiers with self-powered function of internet of things oriented according to claim 2, it is special Sign is：The gate oxide (4), source region electrode (12), the left and right sides of drain region electrode (13) respectively put 4 thermocouples, upper and lower sides Respectively put 2 thermocouples.
4. a kind of LDMOS power amplifiers with self-powered function of internet of things oriented according to claim 1 or 2, It is characterized in that：The Seebeck pressure difference of the output is connected to mu balanced circuit and bulky capacitor rechargeable battery, can carry out power storage, By detecting the size of storage electric energy, so as to detect the size of dissipated power.
5. a kind of LDMOS power amplifiers with self-powered function of internet of things oriented according to claim 1 or 2, It is characterized in that：The distribution of temperature during for LDMOS normal works is different, and heat to electricity conversion is realized according to Seebeck effects, collects Used heat, be advantageous to radiate, so as to improve reliability, extend its service life.
6. a kind of LDMOS power amplifiers with self-powered function of internet of things oriented according to claim 1 or 2, It is characterized in that：Caused Seebeck voltage is output to mu balanced circuit and bulky capacitor rechargeable battery, exports steady dc voltage, even The power supply of amplifier is connected to, is realized self-powered and green energy resource sustainable.
7. a kind of LDMOS power amplifiers with self-powered function of internet of things oriented according to claim 2, it is special Sign is：The material of the insulating barrier (11) is silica.
CN201710556409.5A 2017-07-10 2017-07-10 Internet of things-oriented LDMOS power amplifier with self-power supply function Active CN107404290B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112994622A (en) * 2019-12-16 2021-06-18 大唐移动通信设备有限公司 Doherty radio frequency power amplifier and communication equipment

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110220162A1 (en) * 2010-03-15 2011-09-15 Siivola Edward P Thermoelectric (TE) Devices/Structures Including Thermoelectric Elements with Exposed Major Surfaces
CN103904764A (en) * 2014-03-17 2014-07-02 东南大学 Gallium arsenide-based thermoelectric and photoelectric sensor in self-powered radio frequency receiving and transmitting assembly

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110220162A1 (en) * 2010-03-15 2011-09-15 Siivola Edward P Thermoelectric (TE) Devices/Structures Including Thermoelectric Elements with Exposed Major Surfaces
CN103904764A (en) * 2014-03-17 2014-07-02 东南大学 Gallium arsenide-based thermoelectric and photoelectric sensor in self-powered radio frequency receiving and transmitting assembly

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112994622A (en) * 2019-12-16 2021-06-18 大唐移动通信设备有限公司 Doherty radio frequency power amplifier and communication equipment
CN112994622B (en) * 2019-12-16 2023-12-29 大唐移动通信设备有限公司 Doherty radio frequency power amplifier and communication equipment

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