CN107404290B - Internet of things-oriented LDMOS power amplifier with self-power supply function - Google Patents
Internet of things-oriented LDMOS power amplifier with self-power supply function Download PDFInfo
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- CN107404290B CN107404290B CN201710556409.5A CN201710556409A CN107404290B CN 107404290 B CN107404290 B CN 107404290B CN 201710556409 A CN201710556409 A CN 201710556409A CN 107404290 B CN107404290 B CN 107404290B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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Abstract
The invention provides an Internet of things-oriented LDMOS power amplifier with a self-powered function, which comprises an Internet of things-oriented LDMOS power tube with a thermoelectric conversion function, a resistor, a capacitor, a voltage stabilizing circuit and a large capacitor. A signal is input to the grid electrode of the LDMOS power tube through the blocking capacitor C1, the resistor R1 and the resistor R2 form bias, the source electrode of the LDMOS power tube is grounded through the resistor R3, and the amplified signal is output through the drain electrode of the LDMOS power tube. The LDMOS power tube comprises a plurality of LDMOS single tubes, a silicon dioxide insulating layer is arranged on each LDMOS single tube, 12 thermocouples are respectively manufactured on the insulating layer around an LDMOS source drain gate and are connected in series through metal connecting wires, and two thermocouple electrodes are reserved as a plus pole and a minus pole of a Seebeck voltage output pole. The electrode of the Seebeck voltage is grounded, and the electrode of the capacitor is connected with a voltage stabilizing circuit and a large capacitor. According to the Seebeck effect, waste heat generated during working is recycled and converted into electric energy, electric energy storage and self-power supply are carried out, the heat dissipation performance is enhanced, and meanwhile the service life is prolonged.
Description
Technical Field
The invention relates to the technical field of micro-electro-mechanical systems (MEMS), in particular to an LDMOS power amplifier with a self-powered function and oriented to the Internet of things. LDMOS refers to laterally diffused metal oxide semiconductor.
Background
With the rapid development of information industries such as internet of things communication and the like, the demand for the radio frequency amplifier is increasing, and a large amount of heat loss is generated when the radio frequency transceiving component works, especially the energy consumption generated by the power amplifier part accounts for about 60% of the total energy consumption.
At present, most of electronic devices are powered by batteries, wherein the weight energy density and the volume energy density of lithium batteries are large, and the lithium batteries become the most widely used power sources. However, the storage energy and the service life of the lithium battery are very limited, and the battery replacement is inevitably needed when the lithium battery is used for supplying power, so that a new power supply technology needs to be found to replace the lithium battery.
In recent years, the thermoelectric energy collection technology has been developed in terms of structural optimization, thermoelectric material performance, and the like, so that the thermoelectric energy collection technology has higher thermoelectric conversion capability and is widely applied in the fields of aerospace and the like. The thermoelectric energy collection technology can convert heat energy into electric energy as long as temperature difference exists, and belongs to sustainable green energy.
The invention designs the LDMOS power amplifier with self-powered function facing the Internet of things based on SOI technology and MEMS surface micromachining process, realizes energy collection and self power supply, and is the LDMOS power amplifier applied to the communication of the Internet of things.
Disclosure of Invention
The invention aims to provide an Internet of things-oriented LDMOS power amplifier with a self-powered function, a radio-frequency LDMOS power tube generates a large amount of waste heat during working, a thermocouple realizes thermoelectric energy collection according to a Seebeck effect, the heat dissipation performance of the radio-frequency LDMOS power tube is enhanced, Seebeck voltage is output to a voltage stabilizing circuit and a large capacitor for energy storage, stable direct-current voltage is output, electric energy is provided for the amplifier, and the self-powered function and the sustainable green energy are realized.
In order to achieve the purpose, the invention adopts the following technical scheme:
an internet of things-oriented LDMOS power amplifier with self-powered functionality comprising: the system comprises an Internet of things-oriented LDMOS power tube with a thermoelectric conversion function, a resistor, a capacitor, a voltage stabilizing circuit and a large-capacitor rechargeable battery; a signal is input to a grid electrode of the LDMOS power tube through a blocking capacitor C1, a resistor R1 and a resistor R2 are respectively used for up-down biasing of the grid electrode, a source electrode of the LDMOS power tube is grounded through a resistor R3, a drain electrode of the LDMOS power tube is connected to VDD through a resistor R4, the amplified signal is output through a drain electrode of the LDMOS power tube, the drain electrode of the LDMOS power tube is connected with a load resistor R5 through a blocking capacitor C2, and a voltage stabilizing circuit and a large-capacitor rechargeable battery are connected with VDD; the LDMOS power tube comprises a plurality of LDMOS single tubes; the LDMOS single tube takes an SOI as a substrate, and a P well, an N-drift region, a source region, a drain region, a source region electrode, a drain region electrode and a gate oxide layer are arranged on the substrate; insulating layers are arranged around the source region electrode, the drain region electrode and the gate oxide layer respectively; a plurality of thermocouples are respectively arranged on the insulating layers of the gate source drain region of the LDMOS single tube; the thermocouple comprises a metal Al type thermoelectric arm and a polycrystalline silicon N type thermoelectric arm, and the thermoelectric arms are connected in series by a metal connecting wire to form a thermocouple; thermocouples of a grid source drain region of the LDMOS single tube are connected in series through a metal connecting wire, and 2 thermocouple electrodes are reserved respectively; the thermocouple electrodes of the gate source drain regions of a plurality of LDMOS single tubes are connected in series by metal connecting wires, two thermocouple electrodes are left to serve as a plus pole and a minus pole of the output electrode of the Seebeck voltage, the plus pole is connected with the voltage stabilizing circuit and the large-capacitance rechargeable battery, and the minus pole is grounded.
Furthermore, 4 thermocouples are respectively placed on the left side and the right side of the gate oxide layer, the source region electrode and the drain region electrode, and 2 thermocouples are respectively placed on the upper side and the lower side of the gate oxide layer, the source region electrode and the drain region electrode.
Furthermore, the output seebeck pressure difference is connected with the voltage stabilizing circuit and the large-capacitor rechargeable battery, so that electric energy can be stored, and the size of the stored electric quantity is detected, so that the size of heat dissipation power is detected.
Furthermore, according to different temperature distributions of the LDMOS in normal operation, thermoelectric conversion is realized according to the Seebeck effect, waste heat is collected, and heat dissipation is facilitated, so that the reliability is improved, and the service life of the LDMOS is prolonged.
Furthermore, the generated seebeck voltage is output to the voltage stabilizing circuit and the large-capacitor rechargeable battery, stable direct-current voltage is output and connected to a power supply of the amplifier, and self-powered and green energy source sustainability is achieved.
Furthermore, the insulating layer is made of silicon dioxide.
The invention has the following beneficial effects:
1. the LDMOS power amplifier with the self-powered function and oriented to the Internet of things has the advantages of simple principle and structure, and is easy to realize by utilizing the existing SOI technology and MEMS surface micromachining;
2. the LDMOS power amplifier with the self-power supply function and oriented to the Internet of things realizes the direct conversion from heat energy to electric energy according to the Seebeck effect, effectively recovers waste heat and enhances the heat dissipation performance of the LDMOS power amplifier;
3. the Seebeck voltage output by the LDMOS power amplifier with the self-power supply function facing the Internet of things can output stable direct-current voltage through the voltage stabilizing circuit to serve as a power supply to provide electric energy for the LDMOS power amplifier, so that the self-power supply and the sustainable green energy of the power amplifier are realized;
4. the LDMOS power amplifier with the self-power supply function and oriented to the Internet of things outputs M times of single-tube Seebeck voltage according to the Seebeck effect, the size of the single-tube Seebeck voltage can be controlled by changing the number M of the single tubes, and electric energy can be stored through a large capacitor;
drawings
FIG. 1 is a schematic diagram of an LDMOS power amplifier with self-powered function for Internet of things according to the present invention;
FIG. 2 is a top view of an LDMOS power amplifier with self-powered function for Internet of things according to the present invention;
FIG. 3 is a cross-sectional view of the P-P' direction of the LDMOS power amplifier with self-powered function facing the Internet of things according to the present invention;
FIG. 4 is a cross-sectional view of the direction Q-Q' of the LDMOS power amplifier with self-powered function facing the Internet of things according to the present invention;
fig. 5 is a top view of the placement of the thermocouple in the LDMOS power amplifier with self-powered function (i.e. the thermocouple 14 in fig. 3) facing the internet of things.
The figure includes: the high-capacitance solar cell comprises an SOI substrate 1, a P well 2, an N-drift region 3, a gate oxide layer 4, gate polycrystalline silicon 5, a source region 6, a drain region 7, a metal Al type thermoelectric arm 8 of a thermocouple, a polycrystalline silicon N type thermoelectric arm 9 of the thermocouple, a metal connecting wire 10, a silicon dioxide protective layer 11, a source electrode 12, a drain electrode 13, a thermocouple 14, a voltage stabilizing circuit and a large-capacitance rechargeable battery 15.
Detailed Description
The following further describes the embodiments of the present invention with reference to the drawings.
Referring to fig. 1 to 5, the invention provides an LDMOS power amplifier with self-powered function facing to the internet of things. The LDMOS power amplifier mainly comprises: the system comprises an Internet of things-oriented LDMOS power tube with a thermoelectric conversion function, a resistor, a capacitor, a voltage stabilizing circuit, a large-capacitor rechargeable battery and the like, wherein the LDMOS power tube comprises M LDMOS and 36M thermocouples. Wherein, the LDMOS single tube selects SOI as the substrate 1, andthe LDMOS power tube with the thermoelectric energy conversion function is realized by SOI technology and MEMS surface micromachining. Forming a buffer oxide layer with a thickness of 20nm on the substrate 1 to prevent damage caused by boron ion implantation, and then forming a buffer oxide layer with a thickness of 3.0 × 1012cm-2Performing P-well 2 boron ion implantation at the dosage of (2), and then removing the buffer oxide layer by using BOE; preparing a 20nm buffer oxide layer at 950 deg.C to obtain a buffer oxide layer of 4.0 × 1012cm-2Implanting phosphorus ions at the dosage of the N-type drift region to obtain an N-type drift region 3, and removing the buffer oxide layer by using BOE; manufacturing a 20nm oxide layer for isolation (LOCOS) thermal oxidation, then manufacturing a 100nm silicon nitride layer by LPCVD, performing dry etching on the silicon nitride by active area lithography, and then removing the oxide layer by BOE; preparing LOCOS with thickness of 400nm by dry/wet/dry thermal oxidation, removing 100nm silicon nitride with H3PO, and removing 20nm oxide layer with BOE; preparing a gate oxide layer 4 with the thickness of 20nm, depositing a layer of gate polysilicon 5 with the thickness of 300nm on the gate oxide layer, performing phosphorus diffusion, and etching the gate polysilicon by adopting a dry method; then, boron ion implantation is carried out at a dose of 1.5X 1014cm-2Heating and pushing towards the lower part of the gate polysilicon; arsenic is implanted into source and drain with a dose of 5 × 1015cm-2Obtaining a source region 6 and a drain region 7, and then respectively sputtering a source electrode 12 and a drain electrode 13 with the thickness of 800nm on the source region and the drain region, thereby obtaining the traditional LDMOS.
An insulating layer 11 is formed on the LDMOS to isolate the LDMOS from the thermocouple and prevent short circuit, so that the thermocouple can be formed on the silicon oxide, and the insulating layer is made of silicon dioxide. According to the figure 5, 12 thermocouples are symmetrically manufactured around the grid area, specifically, 4 thermocouples are respectively arranged around the left side and the right side of the grid electrode, 2 thermocouples are respectively arranged on the upper side and the lower side of the grid electrode, the thermocouples are composed of metal Al type thermoelectric arms 8 and polycrystalline silicon N type thermoelectric arms 9, the two thermoelectric arms are connected through a metal connecting wire Al 10, the thermocouples are connected in series, and the two electrodes on the lower side are led out to serve as the thermocouple electrodes of the grid area. Similarly, 12 thermocouples are respectively manufactured around the source and drain regions, two lower electrodes are reserved, the thermocouple electrodes of the M LDMOS single tubes are connected as shown in fig. 2, the two electrodes are reserved as a "+" pole and a "-" pole of the seebeck voltage output, and simultaneously, the source and drain gates of the M LDMOS single tubes are respectively connected into a large-sized LDMOS power tube. The signal is input to the grid electrode of the LDMOS power tube through the blocking capacitor C1, the resistors R1 and R2 are respectively used for up-down biasing of the grid electrode, the source electrode of the LDMOS power tube is grounded through the R3, the drain electrode of the LDMOS power tube is connected to VDD through the R4, the amplified signal is output through the drain electrode of the LDMOS power tube, the drain electrode of the LDMOS power tube is connected to the load resistor R5 through the blocking capacitor C2, and the voltage stabilizing circuit and the large-capacitor rechargeable battery are connected to VDD. The electrode minus of the Seebeck voltage is grounded, the electrode plus is connected with the voltage stabilizing circuit and the large capacitor, the Seebeck voltage is input into the voltage stabilizing circuit and the large capacitor to store electric energy, stable direct current voltage is output, and electric energy is provided for the LDMOS power amplifier.
The preparation method of the LDMOS power amplifier with the self-power supply function facing the Internet of things comprises the following steps:
1) an SOI-based P-type silicon substrate 1 was prepared with a doping concentration of 1015cm-3；
2) Preparing a buffer oxide layer for P-well ion implantation, wherein the thickness is 20nm, the oxidation temperature is 950 ℃, and the time is 28 min;
3) implanting boron ions into P well at a dose of 3.0 × 1012Then, removing the buffer oxide layer by using BOE for 20 s;
4) preparing a buffer oxide layer for N-layer ion implantation, wherein the thickness is 20nm, injecting N-layer phosphorus ions, and removing the buffer oxide layer by using BOE (boron organic) to obtain an N-drift region 3;
5) a 20nm oxide layer is manufactured for isolation (LOCOS) thermal oxidation, and then a 100nm silicon nitride layer is manufactured by LPCVD;
6) performing active area photoetching, adopting a dry method to etch silicon nitride for 1.5min, and using BOE to remove an oxide layer for 20 s;
7) preparing LOCOS by dry/wet/dry thermal oxidation at 400nm thickness and 1000 deg.C for 2 hr with H3PO4Removing 100nm silicon nitride, and removing 20nm oxide layer with BOE;
8) preparing a gate oxide layer 4 with the thickness of 20nm, the temperature of 950 ℃ and the time of 28 min;
9) depositing gate polysilicon 5 with the thickness of 300nm, the temperature of 620 ℃ and the time of 70min, and then performing phosphorus diffusion with the temperature of 950 ℃ and the time of 30 min;
10) photoetching gate polysilicon, and etching the gate polysilicon by adopting a dry method for 35 s;
11) implanting boron ions at a dose of 1.5 × 1014cm-2And heating to push the lower surface of the gate polysilicon, wherein the temperature is 950 ℃, and the time is 20min, so that the P well 2 is obtained.
12) Implanting source and drain N + ions at a dose of 5 × 1015cm-2Obtaining a source region 6 and a drain region 7;
13) oxidizing at low temperature, and etching an opening of the contact region to obtain an insulating layer 11;
14) sputtering a layer of 800nm metal aluminum as a source electrode 12 and a drain electrode 13;
15) chemically and mechanically polishing the insulating layer 11 to prepare for manufacturing a thermocouple;
16) coating photoresist near the grid electrode, and photoetching to form an N-type thermoelectric arm window;
17) LPCVD growing a layer of N + polysilicon with doping concentration and thickness of 5X 1016cm-3And 0.7um, forming a polycrystalline silicon N-type thermoelectric arm 9 of the thermocouple;
18) evaporating to grow Al, reversely etching the Al, and etching the metal pattern to form another metal Al type thermoelectric arm 8 of the thermocouple;
19) coating photoresist, reserving photoresist with specific pattern, and using H3PO4:CH3COOH:HNO3Reversely etching Al at a ratio of 100:10:1 at 50 ℃ for 3min, and connecting the N-type polycrystalline silicon thermoelectric arm 9 and the metal Al-type thermoelectric arm 8 by using a metal connecting wire Al 10 to form a thermocouple;
20) removing the photoresist;
21) 2 extraction electrodes of the grid thermocouple are manufactured;
22) repeating the steps 16) -21) near the source and drain electrodes to manufacture the thermocouple shown in the figure 5;
23) and (3) evaporating aluminum connecting wires, connecting the source electrode, the grid electrode, the drain electrode and the thermocouple electrode as shown in the figure 2, and leaving the two electrodes as output electrodes of the Seebeck pressure difference.
24) The negative electrode is grounded, and the positive electrode is connected with the voltage stabilizing circuit and the large-capacitance rechargeable battery 15 to output stable direct-current voltage and provide electric energy for the amplifier;
25) according to the scheme shown in fig. 2, a capacitor, a resistor and an LDMOS power transistor are connected to obtain an LDMOS power amplifier with a self-powered function.
The criteria for distinguishing whether this structure is present are as follows:
the LDMOS power amplifier with the self-powered function and oriented to the Internet of things comprises an LDMOS power tube with a thermoelectric conversion function, an amplifier circuit, a voltage stabilizing circuit, a large-capacitance rechargeable battery and the like. A silicon dioxide layer grows on a traditional LDMOS and is used as a reference surface for manufacturing thermocouples, 12 thermocouples composed of metal Al type thermoelectric arms and polycrystalline silicon N type thermoelectric arms are manufactured on source gates and drain gates of M single LDMOS tubes respectively and are connected in series through metal connecting wires, and two electrodes are reserved as a plus pole and a minus pole of a Seebeck voltage output pole. A signal is input to a grid electrode of the LDMOS power tube through a blocking capacitor C1, a resistor R1 and a resistor R2 form a bias, a source electrode of the LDMOS power tube is grounded through a resistor R3, and the amplified signal is output through a drain electrode of the LDMOS power tube; the electrode of the Seebeck voltage is grounded, and the electrode of the capacitor is connected with a voltage stabilizing circuit and a large capacitor. According to the Seebeck effect, the LDMOS power amplifier recovers and converts waste heat generated during the operation of the LDMOS power amplifier into electric energy, stores and self-powers the electric energy, enhances the heat dissipation performance of the LDMOS power amplifier, and prolongs the service life of the LDMOS power amplifier.
The structure meeting the above conditions is regarded as the LDMOS power amplifier with self-powered function facing the internet of things.
The above description is only of the preferred embodiments of the present invention, and it should be noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the invention and these are intended to be within the scope of the invention.
Claims (7)
1. The utility model provides a towards LDMOS power amplifier that thing networking has from power supply function which characterized by: the method comprises the following steps: the LDMOS power tube with the thermoelectric conversion function, the resistor, the capacitor, the voltage stabilizing circuit and the large-capacitor rechargeable battery; a signal is input to a grid electrode of the LDMOS power tube through a blocking capacitor C1, a resistor R1 and a resistor R2 are respectively used for up-and-down biasing of the grid electrode of the LDMOS power tube, the other end of the resistor R1 is connected to VDD, the other end of the resistor R2 is grounded, a source electrode of the LDMOS power tube is grounded through a resistor R3, a drain electrode of the LDMOS power tube is connected to VDD through a resistor R4, the amplified signal is output through a drain electrode of the LDMOS power tube, the drain electrode of the LDMOS power tube is connected to a load resistor R5 through a blocking capacitor C2, the other end of a load resistor R5 is grounded, and a voltage stabilizing circuit and a large-capacitor rechargeable; the LDMOS power tube with the thermoelectric conversion function generates a Seebeck voltage, the + pole of the output pole of the Seebeck voltage is connected with the voltage stabilizing circuit and the large-capacitor rechargeable battery, and the-pole is grounded.
2. The internet of things-oriented LDMOS power amplifier with self-powered function as claimed in claim 1, wherein: the LDMOS power tube comprises a plurality of LDMOS single tubes; the LDMOS single tube takes an SOI as a substrate (1), and a P well (2), an N-drift region (3), a source region (6), a drain region (7), a source region electrode (12), a drain region electrode (13) and a gate oxide layer (4) are arranged on the substrate (1); insulating layers (11) are respectively arranged on the peripheries of the source region electrode (12), the drain region electrode (13) and the gate oxide layer (4); a plurality of thermocouples are respectively arranged on the insulating layer (11) at the periphery of the source region electrode (12), the drain region electrode (13) and the gate oxide layer (4), the thermocouples are connected in series through a metal connecting wire (10), two thermocouple electrodes are left to serve as a positive electrode and a negative electrode of an output electrode of the Seebeck voltage, the positive electrode is connected with the voltage stabilizing circuit and the large-capacitance rechargeable battery (15), and the negative electrode is grounded; the thermocouple is formed by connecting a metal Al type thermoelectric arm (8) and a polycrystalline silicon N type thermoelectric arm (9) in series through a metal connecting wire (10).
3. The internet of things-oriented LDMOS power amplifier with self-powered function as claimed in claim 2, wherein: the left side and the right side of the gate oxide layer (4), the source region electrode (12) and the drain region electrode (13) are respectively provided with 4 thermocouples, and the upper side and the lower side of the gate oxide layer are respectively provided with 2 thermocouples.
4. An internet of things-oriented LDMOS power amplifier with self-powered function as claimed in claim 1 or 2 wherein: the output Seebeck differential pressure is connected to the voltage stabilizing circuit and the large-capacitance rechargeable battery, electric energy can be stored, and the size of the stored electric energy is detected, so that the size of the dissipated power is detected.
5. An internet of things-oriented LDMOS power amplifier with self-powered function as claimed in claim 1 or 2 wherein: the thermoelectric conversion is realized according to the Seebeck effect aiming at different temperature distributions when the LDMOS works normally, waste heat is collected, and the heat dissipation is facilitated, so that the reliability is improved, and the service life of the LDMOS is prolonged.
6. An internet of things-oriented LDMOS power amplifier with self-powered function as claimed in claim 1 or 2 wherein: the generated Seebeck voltage is output to the voltage stabilizing circuit and the large-capacitor rechargeable battery, stable direct-current voltage is output and connected to a power supply of the amplifier, and self-powered and green energy source sustainability is achieved.
7. The internet of things-oriented LDMOS power amplifier with self-powered function as claimed in claim 2, wherein: the insulating layer (11) is made of silicon dioxide.
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| CN103904764A (en) * | 2014-03-17 | 2014-07-02 | 东南大学 | Gallium arsenide-based thermoelectric and photoelectric sensor in self-powered radio frequency receiving and transmitting assembly |
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