CN107404295B - HEMT (high electron mobility transistor) tube amplifier with self-powered function and oriented to Internet of things - Google Patents
HEMT (high electron mobility transistor) tube amplifier with self-powered function and oriented to Internet of things Download PDFInfo
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- CN107404295B CN107404295B CN201710555905.9A CN201710555905A CN107404295B CN 107404295 B CN107404295 B CN 107404295B CN 201710555905 A CN201710555905 A CN 201710555905A CN 107404295 B CN107404295 B CN 107404295B
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- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 45
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 230000017525 heat dissipation Effects 0.000 claims abstract description 6
- 230000005678 Seebeck effect Effects 0.000 claims abstract description 5
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- 239000010931 gold Substances 0.000 description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 11
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- 239000011248 coating agent Substances 0.000 description 8
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
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- 239000011574 phosphorus Substances 0.000 description 2
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/32—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries for charging batteries from a charging set comprising a non-electric prime mover rotating at constant speed
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B40/00—Technologies aiming at improving the efficiency of home appliances, e.g. induction cooking or efficient technologies for refrigerators, freezers or dish washers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- General Physics & Mathematics (AREA)
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- Junction Field-Effect Transistors (AREA)
Abstract
The invention provides an HEMT (high electron mobility transistor) tube amplifier with a self-powered function and oriented to the Internet of things, which comprises: the GaAs-based HEMT amplifier tube with the thermoelectric conversion function, which faces to the Internet of things, comprises a resistor, a capacitor, a voltage stabilizing circuit and a large-capacitor rechargeable battery. An HEMT amplifier tube facing the Internet of things and having a thermoelectric conversion function is characterized in that a silicon oxide layer is manufactured on the periphery of a metal electrode of a source drain gate of a traditional HEMT, 12 thermocouples consisting of thermocouple metal arms and thermocouple gallium arsenide arms are manufactured on the silicon oxide layer respectively, and are connected in series by metal Au, and two thermocouple electrodes are reserved as a plus pole and a minus pole of a Seebeck voltage output pole. The 'negative pole and the' positive pole of the Seebeck voltage are grounded, and are output to a voltage stabilizing circuit and a large-capacitance rechargeable battery. According to the Seebeck effect, the HEMT amplifying tube recovers and converts waste heat generated during the work of the HEMT amplifying tube into electric energy, the electric energy is stored and self-powered, the heat dissipation performance is enhanced, and meanwhile the service life is prolonged.
Description
Technical Field
The invention relates to the technical field of micro-electro-mechanical systems (MEMS), in particular to an HEMT (high electron mobility transistor) tube amplifier with a self-powered function and oriented to the Internet of things. HEMT is an abbreviation of High Electron mobility transistor (High Electron mobility transistor).
Background
With the progress of microelectronic technology, the internet of things is rapidly developed, especially wireless sensor networks. The basic unit of the wireless sensor network is a wireless sensor network node, the wireless sensor network node is small in size and mostly powered by a battery with limited capacity, the service life of the sensor node is limited by the limited service life of the battery, and the service life of the whole wireless sensor network is further influenced. Sensor network nodes have the characteristics of large number, wide distribution, complex environment and the like, so that charging the nodes or replacing batteries becomes uneconomical and unrealistic. When the energy of the energy storage element is consumed, the whole system is in a paralysis state. Therefore, it becomes necessary to solve the energy problem of the wireless sensor network node.
In recent years, energy harvesting techniques have been rapidly developed. Micro energy harvesting technology can harvest energy in the environment and convert the energy into electric energy for supplying power to electronic equipment. The semiconductor thermoelectric power generation technology recovers waste heat in the environment, saves energy, can reduce environmental pollution, and has important significance for energy conservation and emission reduction.
The invention designs an HEMT (high Electron mobility transistor) tube amplifier with self-powered function facing to the Internet of things based on GaAs (gallium arsenide) process and MEMS (micro-electromechanical systems) surface micromachining process, and the HEMT tube amplifier is applied to the communication of the Internet of things.
Disclosure of Invention
The invention aims to provide an HEMT (high Electron mobility transistor) amplifier with a self-powered function and oriented to the Internet of things, wherein the HEMT amplifier tube with a thermoelectric conversion function realizes the conversion from heat energy to electric energy according to the Seebeck effect, and the generated voltage is input into a large capacitor for electric energy storage; and inputting the generated voltage into a voltage stabilizing circuit, outputting stable direct current voltage, and outputting the voltage serving as a power supply to supply power to the HEMT amplifier.
In order to achieve the purpose, the invention adopts the following technical scheme:
an internet of things-oriented HEMT-tube amplifier with self-powered function, comprising: the GaAs-based HEMT amplifier tube with the thermoelectric conversion function, the resistor, the capacitor, the voltage stabilizing circuit and the large-capacitor rechargeable battery are oriented to the Internet of things; the signal is input to the grid of the HEMT amplifying tube through a blocking capacitor C1, a resistor R1 and a resistor R2 are respectively the upper and lower offsets of the grid, the source of the HEMT amplifying tube is grounded through a resistor R3, the drain of the HEMT amplifying tube is connected to VDD through a resistor R4, the amplified signal is output through the drain of the HEMT amplifying tube, and the drain of the HEMT amplifying tube is connected to a load resistor R5 through a blocking capacitor C2; the HEMT amplifying tube takes semi-insulating GaAs as a substrate, and the substrate contains an intrinsic GaAs layer, an intrinsic AlGaAs layer and N+AlGaAs layer, N type GaAs layer, source region, drain region, grid metal layer, source drain region metal layer; insulating layers are arranged on the periphery of the grid metal layer and the periphery of the source drain region metal layer respectively; a plurality of thermocouples are respectively arranged on the insulating layers of the gate source drain region; the thermocouple consists of a metal thermoelectric arm and a gallium arsenide thermoelectric arm, the thermoelectric arms are connected in series by a metal connecting wire, and 2 thermocouple electrodes are respectively reserved in the gate source drain region thermocouple; connecting the thermocouple electrodes of the gate source drain region by using metal connecting wires, leaving two thermocouple electrodes as output electrodes of the Seebeck voltage, namely a plus electrode and a minus electrode, connecting the plus electrode with a voltage stabilizing circuit and a large-capacitance rechargeable battery, connecting the minus electrode with the ground, and charging the voltage stabilizing circuit and the large capacitorThe battery is connected with VDD.
Furthermore, 4 thermocouples are respectively placed on the left side and the right side of the grid metal layer, the source region metal layer and the drain region metal layer, and 2 thermocouples are respectively placed on the upper side and the lower side of the grid metal layer, the source region metal layer and the drain region metal layer.
Furthermore, the GaAs-based HEMT amplifying tube with the thermoelectric conversion function has different temperature distribution when in normal operation, realizes thermoelectric conversion according to the Seebeck effect, collects waste heat and is beneficial to heat dissipation.
Furthermore, the output seebeck pressure difference is connected with the voltage stabilizing circuit and the large-capacitor rechargeable battery, so that electric energy can be stored, and the size of the stored electric quantity is detected, so that the size of heat dissipation power is detected.
Furthermore, the generated Seebeck voltage is output to the voltage stabilizing circuit and the large capacitor, stable direct current voltage is output, electric energy is provided for the amplifier, self power supply is achieved, and meanwhile sustainability of green energy is achieved.
Furthermore, the insulating layer is made of silicon dioxide.
The invention has the following beneficial effects:
1. the HEMT is adopted, so that the HEMT has the advantages of high cut-off frequency, high working speed, small short channel effect and good noise performance;
2. the HEMT tube amplifier with the self-powered function has simple principle and structure, and is easy to realize by utilizing the existing GaAs process and MEMS surface micromachining;
3. according to the HEMT tube amplifier with the self-power supply function, according to the Seebeck effect, the thermocouple generates Seebeck voltage, and stable direct-current voltage is output through the voltage stabilizing circuit and used as power supply of the amplifier to supply power, so that the self-power supply and the sustainability of green energy are realized;
4. the HEMT tube amplifier with the self-powered function fully absorbs waste heat, enhances the heat dissipation performance and prolongs the service life.
Drawings
Fig. 1 is a schematic diagram of an HEMT transistor amplifier with self-powered function facing the internet of things according to the present invention;
fig. 2 is a top view of the HEMT-transistor amplifier with self-powered function facing the internet of things of the present invention;
FIG. 3 is a P-P' direction cross-sectional view of the HEMT amplifier with self-powered function facing the Internet of things;
FIG. 4 is a cross-sectional view of the HEMT transistor amplifier Q-Q' with self-powered function facing the Internet of things according to the present invention;
fig. 5 is a top view of the placement of the thermocouple in the HEMT tube amplifier with self-powered function facing the internet of things of the present invention (thermocouple 16 in fig. 3);
reference numbers in the figures: semi-insulating GaAs substrate 1, intrinsic GaAs layer 2, intrinsic AlGaAs layer 3, N+The HEMT comprises an AlGaAs layer 4, a source region ohmic contact GaAs electrode 5, a drain region ohmic contact GaAs electrode 6, a grid metal layer 7, a metal thermoelectric arm 8, a gallium arsenide thermoelectric arm 9, a metal connecting wire 10, an insulating layer 11, an HEMT source region 12, an HEMT drain region 13, a source region metal layer 14, a drain region metal layer 15, a thermocouple 16, a metal through hole 17, a voltage stabilizing circuit and a large-capacitance rechargeable battery 18.
Detailed Description
The following further describes the embodiments of the present invention with reference to the drawings.
Referring to fig. 1 to 5, the invention provides an HEMT transistor amplifier with self-powered function for internet of things, which mainly comprises: HEMT with thermoelectric conversion function, resistor, capacitor, voltage stabilizing circuit, large-capacitance rechargeable battery, etc. The signal is input to the grid of the HEMT amplifying tube through a blocking capacitor C1, a resistor R1 and a resistor R2 are respectively the upper and lower offsets of the grid, the source of the HEMT amplifying tube is grounded through a resistor R3, the drain of the HEMT amplifying tube is connected to VDD through a resistor R4, the amplified signal is output through the drain of the HEMT, and the drain of the HEMT amplifying tube is connected to a load resistor R5 through a blocking capacitor C2. When the HEMT normally works, temperature difference is provided for the thermocouple due to different temperature distribution of the channel region.
A GaAs buffer layer was grown on a semi-insulating GaAs substrate 1, and then an intrinsic gallium arsenide layer 2 having a thickness of 60nm was epitaxially grown. Then, an intrinsic AlGaAs layer 3 with a thickness of 20nm and a doping concentration of 10 nm are grown respectively18cm-3N20 nm thick+AlGaAs layer 4, thenGrowing a layer with doping concentration of 3.5 × 1018cm-3The source region ohmic contact GaAs electrode 5 and the drain region ohmic contact GaAs electrode 6, the mesa etching isolates the active region and performs phosphorus ion implantation with a doping concentration of 3.5 × 1018cm-3Obtaining a source region 12 and a drain region 13; coating photoresist, removing the photoresist at the electrode contact position by photoetching, stripping after vacuum evaporation of gold, germanium, nickel and gold, and alloying to form ohmic contact to obtain a source region metal layer 14 and a drain region metal layer 15; coating photoresist, removing the photoresist at the grid position of the HEMT by photoetching, and growing a layer of Ti/Pt/Au with the thickness of 0.5 mu m; and removing the photoresist and the metal on the photoresist to form a gate metal layer 7 of the Schottky contact, thereby obtaining the traditional HEMT device.
And manufacturing an insulating layer 11 in the grid region of the HEMT device to isolate the HEMT and the thermocouple and avoid short circuit, wherein the insulating layer is made of silicon dioxide. At the same time, polishing was performed to fabricate a thermocouple on the silica. As shown in FIG. 5, the thermocouple is formed by epitaxially growing a layer of N + GaAs as the GaAs thermoelectric leg 9, and etching back the N + GaAs to a doping concentration of 1017cm-3The gallium arsenide thermoelectrics 9; removing the photoresist on which the gold-germanium-nickel/gold is to be reserved, sputtering the gold-germanium-nickel/gold to be used as a thermocouple metal arm, and stripping to obtain a metal thermoelectric arm 8 with the thickness of 270 nm; and evaporating a layer of gold layer to be used as 12 thermocouples of the metal connecting wire connected with the grid region, and reserving two lower electrodes to be used as output electrodes of the thermocouples of the grid region. And then, growing a layer of silicon dioxide above the output electrode of the gate thermocouple, carrying out chemical mechanical polishing, then making a metal through hole, and leading the output electrode of the gate thermocouple to a horizontal plane of the source-drain region. And then, repeating the process of manufacturing the thermocouples in the gate region, manufacturing 12 thermocouples in the source and drain regions respectively, connecting the thermocouples according to the process shown in fig. 2, and finally, leaving two thermocouple electrodes as a plus pole and a minus pole of the Seebeck voltage output pole. Grounding the electrode < - > of the Seebeck voltage output electrode, connecting the electrode < + > with the voltage stabilizing circuit and the large capacitor, and inputting the generated Seebeck voltage into the large capacitor for electric energy storage; the generated Seebeck voltage is connected to VDD to supply power to the HEMT amplifier, and the sustainability of self-power supply and green energy is realized.
The preparation method of the HEMT tube amplifier with the self-power supply function facing the Internet of things comprises the following steps:
1) preparing a GaAs substrate 1, selecting an epitaxial semi-insulating GaAs substrate, wherein the doping concentration of epitaxial N + GaAs is 1018cm-3The square resistance value is 100 to 130 omega;
2) growing an intrinsic GaAs layer 2 with the thickness of 60nm by a molecular beam epitaxy method;
3) growing an intrinsic AlGaAs layer 3 with the thickness of 20nm by a molecular beam epitaxy method;
4) growing an N + type AlGaAs layer 4 with a thickness of 20nm and a doping concentration of 1 × 1018cm-3Controlling the thickness and the doping concentration to enable the HEMT tube to be enhanced;
5) growing an N + type GaAs layer with a doping concentration of 3.5 × 1018cm-3；
6) The table top is corroded to isolate the active region, and a source region ohmic contact GaAs electrode 5 and a drain region ohmic contact GaAs electrode 6 are obtained;
7) growing silicon nitride;
8) photoetching silicon nitride layer, etching source and drain regions, and implanting phosphorus (P) ions with a doping concentration of 3.5 × 1018cm-3Forming a source region 12 and a drain region 13, and removing silicon nitride;
9) coating photoresist, and removing the photoresist at the contact position of the electrode by photoetching;
10) vacuum evaporating gold, germanium, nickel and gold;
11) stripping and alloying to form ohmic contact to obtain a source region metal layer 14 and a drain region metal layer 15;
12) coating photoresist, and removing the photoresist at the grid position of the HEMT by photoetching;
13) growing a layer of Ti/Pt/Au with the thickness of 0.5 mu m;
14) removing the photoresist and the metal on the photoresist to form a gate metal layer 7 of the Schottky contact;
15) coating photoresist, and reserving the photoresist above the HEMT grid metal layer 7;
16) epitaxially growing a 0.2 μm insulating layer 11, and chemically and mechanically polishing;
17) removing the photoresist and SiO on the gate metal layer 72A layer;
18) coating photoresist, reserving the photoresist above the HEMT grid metal layer 7, and removing the photoresist in the shape of the thermocouple gallium arsenide arm 9;
19) epitaxially growing a layer of N + GaAs as thermocouple GaAs arm to form GaAs thermoelectric arm 9 shape and ohmic contact region, and etching back N + GaAs to form a doping concentration of 1017cm-3The gallium arsenide thermoelectrics 9;
20) coating photoresist, and removing the photoresist on which the thermocouple metal arm is to be prepared;
21) sputtering gold germanium nickel/gold as a metal thermoelectric arm 8, wherein the thickness of the metal thermoelectric arm is 270 nm;
22) stripping to obtain a metal thermoelectric arm 8;
23) coating photoresist, evaporating a layer of gold with the thickness of 0.3um to be used as a metal connecting wire for connecting the gallium arsenide thermoelectric arm 9, the metal thermoelectric arm 8 and the like, removing the photoresist, and leaving two thermocouple leading-out electrodes;
24) growing a layer of SiO on the gate thermocouple leading-out electrode2The insulating layer 11 is chemically and mechanically polished, a metal through hole 17 is formed in the position of the extraction electrode, and metal gold is deposited and extracted;
25) and (4) repeating the steps from 15) to-24), manufacturing a thermocouple in a source drain region, depositing a gold layer 10, connecting extraction electrodes as shown in figure 2, and leaving two electrodes as an output electrode "+" and a "-" electrode of the Seebeck pressure difference.
26) The "-" electrode of the seebeck voltage is grounded, and the "+" electrode is connected to the power supply of the amplifier through a voltage stabilizing circuit and a large-capacitance rechargeable battery 18;
27) as shown in fig. 2, resistors, capacitors, and the like are connected to obtain a HEMT transistor amplifier having a self-power supply function.
The criteria for distinguishing whether this structure is present are as follows:
the HEMT tube amplifier with the self-power supply function and oriented to the Internet of things comprises a HEMT tube with a thermoelectric conversion function, an amplifier circuit, a voltage stabilizing circuit, a large-capacitance rechargeable battery and the like. A signal is input to the grid electrode of the HEMT amplifying tube through a blocking capacitor C1, a resistor R1 and a resistor R2 form a bias, and the amplified signal is output through the drain electrode of the HEMT. A silicon oxide layer is manufactured on the periphery of a metal electrode of a traditional HEMT source drain gate, 12 thermocouples consisting of thermocouple metal arms and thermocouple gallium arsenide arms are manufactured on the metal electrode, the thermocouples are connected in series through metal Au, and two thermocouple electrodes are reserved as a cathode and an anode of a Seebeck voltage output electrode. The negative pole of the Seebeck voltage is grounded, and the positive pole is output to the voltage stabilizing circuit and the large capacitor to store electric energy and output stable direct-current voltage to provide electric energy for the amplifier, so that self-power supply is realized, and the Seebeck voltage is sustainable green energy.
The structure meeting the above conditions is regarded as the HEMT transistor amplifier with self-powered function facing the internet of things.
The above description is only of the preferred embodiments of the present invention, and it should be noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the invention and these are intended to be within the scope of the invention.
Claims (7)
1. The utility model provides a HEMT pipe amplifier towards thing networking has from power supply function which characterized by: the method comprises the following steps: the HEMT amplifier comprises a HEMT amplifier tube with a thermoelectric conversion function, a resistor, a capacitor, a voltage stabilizing circuit and a large-capacitor rechargeable battery; a signal is input to a grid electrode of the HEMT amplifying tube through a blocking capacitor C1, a resistor R1 and a resistor R2 are respectively up and down offset of the grid electrode of the HEMT amplifying tube, the other end of the resistor R1 is connected to VDD, the other end of the resistor R2 is grounded, a source electrode of the HEMT amplifying tube is grounded through a resistor R3, a drain electrode of the HEMT amplifying tube is connected to VDD through a resistor R4, the amplified signal is output through the drain electrode of the HEMT amplifying tube, the drain electrode of the HEMT amplifying tube is connected to a load resistor R5 through a blocking capacitor C2, the other end of a load resistor R5 is grounded, and a voltage stabilizing circuit and a large-; the HEMT amplifying tube with the thermoelectric conversion function generates a Seebeck voltage, the + pole of the output pole of the Seebeck voltage is connected with the voltage stabilizing circuit and the large-capacitance rechargeable battery, and the-pole is grounded.
2. The noodle of claim 1The HEMT amplifier with the thermoelectric conversion function takes semi-insulating GaAs as a substrate (1), and an intrinsic GaAs layer (2), an intrinsic AlGaAs layer (3) and N are arranged on the substrate (1)+The semiconductor device comprises an AlGaAs layer (4), a source region ohmic contact GaAs electrode (5), a drain region ohmic contact GaAs electrode (6), a source region (12), a drain region (13), a grid metal layer (7), a source region metal layer (14) and a drain region metal layer (15); insulating layers (11) are arranged on the peripheries of the gate metal layer (7), the source region metal layer (14) and the drain region metal layer (15) respectively; a plurality of thermocouples are respectively arranged on the insulating layer (11) at the periphery of the grid metal layer (7), the source region metal layer (14) and the drain region metal layer (15), the thermocouples are connected in series through a metal connecting wire (10), two thermocouple electrodes are left to serve as a positive electrode and a negative electrode of an output electrode of the Seebeck voltage, the positive electrode is connected with the voltage stabilizing circuit and the large-capacitance rechargeable battery (18), and the negative electrode is grounded; the thermocouple is formed by connecting a metal thermoelectric arm (8) and a gallium arsenide thermoelectric arm (9) in series through a metal connecting wire (10).
3. The internet of things-oriented HEMT tube amplifier with self-powered function of claim 2, wherein: 4 thermocouples are respectively placed on the left side and the right side of the grid metal layer (7), the source region metal layer (14) and the drain region metal layer (15), and 2 thermocouples are respectively placed on the upper side and the lower side of the grid metal layer, the source region metal layer and the drain region metal layer.
4. The internet-of-things-oriented HEMT tube amplifier with self-powered function according to claim 1 or 2, wherein: the HEMT amplifying tube with the thermoelectric conversion function has different temperature distributions during normal work, realizes thermoelectric conversion according to the Seebeck effect, collects waste heat and is favorable for heat dissipation.
5. The internet-of-things-oriented HEMT tube amplifier with self-powered function according to claim 1 or 2, wherein: the Seebeck voltage is connected with the voltage stabilizing circuit and the large-capacitor rechargeable battery, electric energy can be stored, and the size of the stored electric quantity is detected, so that the size of heat dissipation power is detected.
6. The internet-of-things-oriented HEMT tube amplifier with self-powered function according to claim 1 or 2, wherein: the Seebeck voltage is output to the voltage stabilizing circuit and the large-capacitor rechargeable battery, stable direct-current voltage is output, electric energy is provided for the amplifier, self power supply is achieved, and meanwhile sustainability of green energy is achieved.
7. The internet of things-oriented HEMT tube amplifier with self-powered function of claim 2, wherein: the insulating layer (11) is made of silicon dioxide.
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| CN201710555905.9A CN107404295B (en) | 2017-07-10 | 2017-07-10 | HEMT (high electron mobility transistor) tube amplifier with self-powered function and oriented to Internet of things |
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| CN201710555905.9A CN107404295B (en) | 2017-07-10 | 2017-07-10 | HEMT (high electron mobility transistor) tube amplifier with self-powered function and oriented to Internet of things |
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| CN107404295B true CN107404295B (en) | 2020-05-05 |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103904764A (en) * | 2014-03-17 | 2014-07-02 | 东南大学 | Gallium arsenide-based thermoelectric and photoelectric sensor in self-powered radio frequency receiving and transmitting assembly |
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| US9601677B2 (en) * | 2010-03-15 | 2017-03-21 | Laird Durham, Inc. | Thermoelectric (TE) devices/structures including thermoelectric elements with exposed major surfaces |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103904764A (en) * | 2014-03-17 | 2014-07-02 | 东南大学 | Gallium arsenide-based thermoelectric and photoelectric sensor in self-powered radio frequency receiving and transmitting assembly |
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