CN107404295A - The HEMT pipe amplifiers with self-powered function of internet of things oriented - Google Patents
The HEMT pipe amplifiers with self-powered function of internet of things oriented Download PDFInfo
- Publication number
- CN107404295A CN107404295A CN201710555905.9A CN201710555905A CN107404295A CN 107404295 A CN107404295 A CN 107404295A CN 201710555905 A CN201710555905 A CN 201710555905A CN 107404295 A CN107404295 A CN 107404295A
- Authority
- CN
- China
- Prior art keywords
- hemt
- internet
- self
- pole
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 claims abstract description 56
- 229910052751 metal Inorganic materials 0.000 claims abstract description 56
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 42
- 239000003990 capacitor Substances 0.000 claims abstract description 21
- 230000005611 electricity Effects 0.000 claims abstract description 16
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000523 sample Substances 0.000 claims abstract description 7
- 238000003860 storage Methods 0.000 claims abstract description 6
- 230000005678 Seebeck effect Effects 0.000 claims abstract description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- 206010037660 Pyrexia Diseases 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 230000003321 amplification Effects 0.000 claims description 4
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 2
- 239000006185 dispersion Substances 0.000 abstract 1
- 238000011084 recovery Methods 0.000 abstract 1
- 238000005728 strengthening Methods 0.000 abstract 1
- 239000002918 waste heat Substances 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 34
- 229920002120 photoresistant polymer Polymers 0.000 description 23
- 239000010931 gold Substances 0.000 description 7
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 206010033799 Paralysis Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- -1 phosphonium ion Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/32—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries for charging batteries from a charging set comprising a non-electric prime mover rotating at constant speed
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B40/00—Technologies aiming at improving the efficiency of home appliances, e.g. induction cooking or efficient technologies for refrigerators, freezers or dish washers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The present invention proposes a kind of HEMT pipe amplifiers with self-powered function of internet of things oriented, including：The GaAs bases of internet of things oriented have HEMT amplifier tubes, resistance, electric capacity, mu balanced circuit and the bulky capacitor rechargeable battery of heat to electricity conversion function.The HEMT amplifier tubes with heat to electricity conversion function of internet of things oriented make one layer of silicon oxide layer in the metal electrode surrounding of traditional HEMT source and drain grid, 12 thermocouples being made up of thermo-electric metal arm and thermocouple GaAs arm are respectively made above, connected with metal Au, leave two thermocouple probes as Seebeck voltage output stage "+" pole and " " pole." " pole of Seebeck voltage is grounded, "+" pole is output to mu balanced circuit and bulky capacitor rechargeable battery.According to Seebeck effects, HEMT amplifier tubes itself will work caused by Waste Heat Recovery be converted into electric energy, carry out power storage and self-powered, increase the service life while strengthening heat dispersion.
Description
Technical field
The present invention relates to microelectromechanical systems (MEMS) technical field, and in particular to a kind of internet of things oriented has
The HEMT pipe amplifiers of self-powered function.HEMT is HEMT (High Electron Mobility
Transistor abbreviation).
Background technology
With the progress of microelectric technique, Internet of Things is developed faster, especially radio sensing network.It is substantially single
Member is radio sensing network node, its small volume, mostly by the battery powered of finite capacity, and the service life of battery limited
The life-span of sensor node is limited, and then influences the life-span of whole radio sensing network.Sensor network nodes have number
The features such as huge, widely distributed, environment is complicated, therefore, for node charged or changed battery become some it is uneconomical and
It is unrealistic.When energy-storage travelling wave tube energy has consumed, whole system is in paralyzed state.Therefore, solves the energy of radio sensing network node
Source problem becomes very necessary.
In recent years, energy collection technology has obtained rapid development.Miniature energy collection technique can be by the energy in environment
Amount collects, and changes into electric energy and powered for electron equipment.Wherein, semiconductor temperature differential generating technology is to useless in environment
Heat is reclaimed, and not only saves the energy, can also be reduced environmental pollution, significant to energy-saving and emission-reduction.
The present invention is based on a kind of internet of things oriented of GaAs techniques and MEMS surface micromachined technological designs
HEMT pipe amplifiers with self-powered function, this is a kind of HEMT pipe amplifiers applied in Internet of Things communication.
The content of the invention
It is an object of the invention to provide a kind of HEMT pipe amplifiers with self-powered function of internet of things oriented, have
The HEMT amplifier tubes of heat to electricity conversion function realize conversion of the heat energy to electric energy, by caused control source according to Seebeck effects
To bulky capacitor, power storage is carried out；By caused control source to mu balanced circuit, steady dc voltage is exported, exports conduct
Power supply is powered for HEMT amplifiers.
To achieve the above object, the present invention adopts the following technical scheme that：
A kind of HEMT pipe amplifiers with self-powered function of internet of things oriented, including：The GaAs bases of internet of things oriented
HEMT amplifier tubes, resistance, electric capacity, mu balanced circuit and bulky capacitor rechargeable battery with heat to electricity conversion function；Signal passes through blocking
Electric capacity C1 is input to the grid of HEMT amplifier tubes, and resistance R1 and resistance R2 are respectively the upper below-center offset of grid, HEMT amplifier tubes
Source electrode is grounded by resistance R3, and the drain electrode of HEMT amplifier tubes is connected to VDD by resistance R4, and the signal after amplification is amplified by HEMT
The drain electrode output of pipe, the drain electrode of HEMT amplifier tubes meet load resistance R5 by capacitance C2；The HEMT amplifier tubes are exhausted with half
The GaAs of edge is substrate, and intrinsic GaAs layers, intrinsic AlGaAs layers, N are contained on substrate+AlGaAs layers, N-type GaAs layers, source region,
Drain region, gate metal layer, source-drain area metal level；The gate metal layer, the surrounding of source-drain area metal level are respectively equipped with insulating barrier；
Several thermocouples are respectively equipped with the insulating barrier of the grid source-drain area；The thermocouple is by metal fever electric arm and GaAs thermoelectricity
Arm is formed, and above-mentioned thermoelectric arm is together in series with metal connecting line, and grid source-drain area thermocouple reserves 2 thermocouple probes respectively；
The thermocouple probes of grid source-drain area are connected with metal connecting line, leave output stage of two thermocouple probes as Seebeck voltage
"+" pole and "-" pole, "+" pole connect mu balanced circuit and bulky capacitor rechargeable battery, "-" pole ground connection, mu balanced circuit and bulky capacitor charging electricity
Pond meets VDD.
Further, the gate metal layer, source region metal level, the left and right sides of drain region metal level respectively put 4 thermocouples,
Upper and lower sides respectively put 2 thermocouples.
Further, the distribution of temperature when there is the HEMT amplifier tube normal works of heat to electricity conversion function due to GaAs bases
Difference, heat to electricity conversion is realized according to Seebeck effects, used heat is collected, is advantageous to radiate.
Further, the Seebeck pressure difference of output connects mu balanced circuit and bulky capacitor rechargeable battery, can carry out power storage,
By detecting the size of storing electricity, so as to detect the size of heat-dissipating power.
Further, caused Seebeck voltage is output to mu balanced circuit and bulky capacitor, exports steady dc voltage, is
Amplifier provides electric energy, realizes self-powered while realizes the sustainable of green energy resource.
Further, the material of the insulating barrier is silica.
The present invention has the advantages that：
1st, the present invention uses HEMT, has cut-off frequency height, operating rate is fast, short-channel effect is small and noiseproof feature is good
Advantage；
2nd, the principle of the HEMT pipe amplifiers with self-powered function of the invention, simple in construction, utilizes existing GaAs
Technique and MEMS surface micromachineds are easily achieved；
3rd, for the HEMT pipes amplifier with self-powered function of the invention according to Seebeck effects, thermocouple produces plug shellfish
Gram voltage, by mu balanced circuit, steady dc voltage is exported, the power supply as amplifier is powered, and realizes self-powered and green
The energy it is sustainable；
4th, the HEMT pipe amplifiers with self-powered function of the invention fully absorb to used heat, enhance its radiating
Performance, extend service life.
Brief description of the drawings
Fig. 1 is the schematic diagram of the HEMT pipe amplifiers with self-powered function of internet of things oriented of the present invention；
Fig. 2 is the top view of the HEMT pipe amplifiers with self-powered function of internet of things oriented of the present invention；
Fig. 3 be internet of things oriented of the present invention the HEMT pipe amplifier P-P ' with self-powered function to profile；
Fig. 4 be internet of things oriented of the present invention the HEMT pipe amplifier Q-Q ' with self-powered function to profile；
Fig. 5 bows for what the thermocouple in the HEMT pipe amplifiers with self-powered function of internet of things oriented of the present invention was put
View (thermocouple 16 in Fig. 3)；
Label in figure：Half-insulating GaAs substrate 1, intrinsic GaAs layers 2, intrinsic AlGaAs layers 3, N+AlGaAs layers 4, source region Europe
Nurse contact GaAs poles 5, drain region Ohmic contact GaAs poles 6, gate metal layer 7, metal fever electric arm 8, GaAs thermoelectric arm 9, metal
Line 10, insulating barrier 11, HEMT source regions 12, HEMT drain regions 13, source region metal level 14, drain region metal level 15, thermocouple 16, metal
Via 17, mu balanced circuit and bulky capacitor rechargeable battery 18.
Embodiment
The embodiment of the present invention is described further below in conjunction with the accompanying drawings.
Referring to Fig. 1-5, the present invention proposes a kind of HEMT pipe amplifiers with self-powered function of internet of things oriented, main
Including：HEMT, resistance, electric capacity, mu balanced circuit and bulky capacitor rechargeable battery with heat to electricity conversion function etc..Signal by every
Straight electric capacity C1 is input to the grid of HEMT amplifier tubes, and resistance R1 and resistance R2 are respectively the upper below-center offset of grid, HEMT amplifier tubes
Source electrode be grounded by resistance R3, the drain electrode of HEMT amplifier tubes is connected to VDD by resistance R4, and the signal after amplification is to pass through HEMT
Drain electrode output, the drain electrode of HEMT amplifier tubes meets load resistance R5 by capacitance C2.Wherein, when HEMT normal works,
Because the Temperature Distribution of channel region is different, so as to provide the temperature difference for thermocouple.
GaAs cushions are grown on half-insulating GaAs substrate 1, then epitaxial growth a layer thickness is 60nm intrinsic arsenic
Change gallium layer 2.It is then 10 growing intrinsic AlGaAs layers 3 that a thickness is 20nm and doping concentration respectively18cm-320nm it is thick
N+AlGaAs layers 4, one layer of doping concentration of regrowth are 3.5 × 1018cm-3Source region Ohmic contact GaAs poles 5 and drain region ohm
GaAs poles 6 are contacted, mesa etch isolation active area simultaneously carries out phosphonium ion injection, and doping concentration is 3.5 × 1018cm-3, obtain source
Area 12 and drain region 13；Photoresist is coated, photoetching removes the photoresist of electrode contact locations, is peeled off after being evaporated in vacuo gold germanium ni au,
Alloying forms Ohmic contact, obtains source region metal level 14 and drain region metal level 15；Photoresist is coated, photoetching removes HEMT gate pole
The photoresist of position, grows one layer of Ti/Pt/Au, and thickness is 0.5 μm；The metal on photoresist and photoresist is removed, forms Xiao
The gate metal layer 7 of Te Ji contacts, so as to obtain traditional HEMT device.
A layer insulating 11 is made in HEMT device grid region, to isolate HEMT and thermocouple, avoids short circuit, insulating barrier
Material is silica.Meanwhile be polished, to make thermocouple on silica.As shown in figure 5, thermocouple passes through
One layer of N+ GaAs of epitaxial growth anti-carves N+ GaAs, forms doping concentration as 10 as GaAs thermoelectric arm 917cm-3Arsenic
Change gallium thermoelectric arm 9；The photoresist of gold germanium ni au will be retained by removing, and sputtering gold germanium ni au is peeled off as thermo-electric metal arm
After obtain metal fever electric arm 8, its thickness is 270nm；One layer of layer gold of evaporation is used as 12 thermocouples in metal connecting line connection grid region,
Reserve output electrode of two electrodes in lower section as grid region thermocouple.Then, one is grown above the thermocouple output electrode of grid region
Layer silica, chemically mechanical polishing, then does metallic vias, draws the output electrode of grid region thermocouple to one level of source-drain area
Face.Then, repeat grid region and make thermocouple process, 12 thermocouples are respectively made in source-drain area, according to being connected as shown in Figure 2
Line, two thermocouple probes are finally left as Seebeck voltage output stage "+" pole and "-" pole.By Seebeck voltage output stage
"-" electrode ground connection, "+" electrode connects mu balanced circuit and bulky capacitor, and caused Seebeck voltage is input into bulky capacitor carries out electricity
Can storage；Caused Seebeck voltage is connected to VDD, powered for HEMT amplifiers, realizes self-powered and green energy resource
It is sustainable.
The preparation method of the HEMT pipe amplifiers with self-powered function of the internet of things oriented of the present invention is as follows：
1) gallium arsenide substrate 1 is prepared, it is dense from the semi-insulating GaAs substrate of extension, the doping of wherein extension N+ GaAs
Spend for 1018cm-3, its square resistance is 100 to 130 Ω；
2) molecular beam epitaxy grows the intrinsic GaAs layers 2 that a layer thickness is 60nm；
3) molecular beam epitaxy grows the intrinsic AlGaAs layers 3 that a layer thickness is 20nm；
4) the N+ type AlGaAs layers 4 that a layer thickness is 20nm are grown, doping concentration is 1 × 1018cm-3, control thickness is with mixing
Miscellaneous concentration so that HEMT pipes are enhanced；
5) one layer of N+ type GaAs layer is grown, doping concentration is 3.5 × 1018cm-3；
6) mesa etch isolation active area, obtains source region Ohmic contact GaAs poles 5 and drain region Ohmic contact GaAs poles 6；
7) grown silicon nitride；
8) photoetching silicon nitride layer, source and drain areas are carved, carries out phosphorus (P) ion implanting, doping concentration is 3.5 × 1018cm-3,
Source region 12 and drain region 13 are formed, removes silicon nitride；
9) photoresist is coated, photoetching removes the photoresist of electrode contact locations；
10) it is evaporated in vacuo gold germanium ni au；
11) peel off, alloying forms Ohmic contact, obtains source region metal level 14 and drain region metal level 15；
12) photoresist is coated, photoetching removes the photoresist of HEMT gate pole position；
13) one layer of Ti/Pt/Au is grown, thickness is 0.5 μm；
14) metal on photoresist and photoresist is removed, forms the gate metal layer 7 of Schottky contacts；
15) photoresist is coated, retains the photoresist of the top of HEMT gate pole metal level 7；
16) insulating barrier 11 of 0.2 μm of epitaxial growth one layer, and chemically-mechanicapolish polish；
17) photoresist and SiO above gate metal layer 7 are removed2Layer；
18) photoresist is coated, retains the photoresist of the top of HEMT gate pole metal level 7, removes the shape of thermocouple GaAs arm 9
Photoresist；
19) one layer of N+ GaAs of epitaxial growth is as thermocouple GaAs arm, the shape of formation GaAs thermoelectric arm 9 and Europe
Nurse contact zone, N+ GaAs is anti-carved, form doping concentration as 1017cm-3GaAs thermoelectric arm 9；
20) photoresist is coated, removes the photoresist that will prepare thermo-electric metal arm；
21) gold germanium ni au is sputtered as metal fever electric arm 8, and its thickness is 270nm；
22) peel off, obtain metal fever electric arm 8；
23) photoresist is coated, the thick layer gold of one layer of 0.3um is evaporated and is used as connection GaAs thermoelectric arm 9 and metal fever electric arm 8
Deng metal connecting line, remove photoresist, leave two thermocouple extraction poles；
24) one layer of SiO is grown above the thermocouple extraction pole of grid region2Insulating barrier 11, chemically mechanical polishing, and in extraction pole
Metallic vias 17 is done in position, and deposit metallic gold is drawn；
25) repeat 15) --- 24) step, thermocouple is made in source-drain area, deposit layer gold 10 enters extraction pole as shown in Figure 2
Row connection, leaves output stage "+" and "-" electrode of two electrodes as Seebeck pressure difference.
26) the "-" electrode of Seebeck voltage is grounded, "+" electrode is connected by mu balanced circuit and bulky capacitor rechargeable battery 18
It is connected to the power supply of amplifier；
27) according to each resistance, electric capacity etc. shown in Fig. 2, is connected, the HEMT pipe amplifiers with self-powered function are obtained.
Distinguish whether be the structure standard it is as follows：
The HEMT pipes amplifier with self-powered function of the internet of things oriented of the present invention is included with heat to electricity conversion function
HEMT pipes, amplifier circuit, mu balanced circuit and bulky capacitor rechargeable battery etc..Signal is input to HEMT by capacitance C1 and put
The grid of big pipe, resistance R1 and R2 form biasing, and the signal after amplification is exported by HEMT drain electrode.In traditional HEMT source and drain
The metal electrode surroundings of grid makes one layer of silicon oxide layer, above each make 12 by thermo-electric metal arm and thermocouple GaAs arm
The thermocouple of composition, connected with metal Au, leave two thermocouple probes as Seebeck voltage output stage "+" pole and
"-" pole.The "-" pole of Seebeck voltage is grounded, "+" pole is output to mu balanced circuit and bulky capacitor, carries out power storage, and output is steady
Fixed DC voltage, electric energy is provided for amplifier, realizes self-powered, be sustainable green energy resource.
Meet that the structure of conditions above is considered as the HEMT pipes with self-powered function of internet of things oriented of the present invention and put
Big device.
Described above is only the preferred embodiment of the present invention, it should be pointed out that：For the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (7)
1. a kind of HEMT pipe amplifiers with self-powered function of internet of things oriented, it is characterized in that：Including：With heat to electricity conversion
HEMT amplifier tubes, resistance, electric capacity, mu balanced circuit and the bulky capacitor rechargeable battery of function；Signal is input to by capacitance C1
The grid of HEMT amplifier tubes, resistance R1 and resistance R2 are respectively the upper below-center offset of the grid of HEMT amplifier tubes, HEMT amplifier tubes
Source electrode is grounded by resistance R3, and the drain electrode of HEMT amplifier tubes is connected to VDD by resistance R4, and the signal after amplification is amplified by HEMT
The drain electrode output of pipe, the drain electrode of HEMT amplifier tubes connect load resistance R5, mu balanced circuit and bulky capacitor charging by capacitance C2
Battery meets VDD；The HEMT amplifier tubes with heat to electricity conversion function produce Seebeck voltage, the output stage of Seebeck voltage
"+" pole connects mu balanced circuit and bulky capacitor rechargeable battery, "-" pole ground connection.
2. the HEMT pipe amplifiers with self-powered function of internet of things oriented according to claim 1, described to have heat
The HEMT amplifier tubes of electric translation function are provided with intrinsic GaAs layers (2), sheet using semi-insulated GaAs substrate (1) on substrate (1)
Levy AlGaAs layers (3), N+AlGaAs layers (4), source region Ohmic contact GaAs poles (5), drain region Ohmic contact GaAs poles (6), source region
(12), drain region (13), gate metal layer (7), source region metal level (14), drain region metal level (15)；The gate metal layer (7),
Source region metal level (14), the surrounding of drain region metal level (15) are respectively equipped with insulating barrier (11)；The gate metal layer (7), source region
Metal level (14), drain region metal level (15) surrounding insulating barrier (11) on be respectively equipped with several thermocouples, lead between thermocouple
Metal connecting line (10) series connection is crossed, and leaves output stage "+" pole and "-" pole of two thermocouple probes as Seebeck voltage, "+"
Pole connects mu balanced circuit and bulky capacitor rechargeable battery (18), "-" pole ground connection；The thermocouple is by metal fever electric arm (8) and GaAs
Thermoelectric arm (9) is in series by metal connecting line (10).
3. the HEMT pipe amplifiers with self-powered function of internet of things oriented according to claim 2, it is characterized in that：Institute
State gate metal layer (7), source region metal level (14), the left and right sides of drain region metal level (15) and respectively put 4 thermocouples, upper and lower sides are each
Put 2 thermocouples.
4. the HEMT pipe amplifiers with self-powered function of internet of things oriented according to claim 1 or 2, its feature
It is：The distribution of temperature during the HEMT amplifier tube normal works with heat to electricity conversion function is different, according to Seebeck effects
Heat to electricity conversion is realized, used heat is collected, is advantageous to radiate.
5. the HEMT pipe amplifiers with self-powered function of internet of things oriented according to claim 1 or 2, its feature
It is：The Seebeck voltage connects mu balanced circuit and bulky capacitor rechargeable battery, power storage can be carried out, by detecting storing electricity
Size, so as to detect the size of heat-dissipating power.
6. the HEMT pipe amplifiers with self-powered function of internet of things oriented according to claim 1 or 2, its feature
It is：The Seebeck voltage is output to mu balanced circuit and bulky capacitor rechargeable battery, exports steady dc voltage, is carried for amplifier
Power supply can, realize self-powered while realize the sustainable of green energy resource.
7. the HEMT pipe amplifiers with self-powered function of internet of things oriented according to claim 2, it is characterized in that：Institute
The material for stating insulating barrier (11) is silica.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710555905.9A CN107404295B (en) | 2017-07-10 | 2017-07-10 | HEMT (high electron mobility transistor) tube amplifier with self-powered function and oriented to Internet of things |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710555905.9A CN107404295B (en) | 2017-07-10 | 2017-07-10 | HEMT (high electron mobility transistor) tube amplifier with self-powered function and oriented to Internet of things |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107404295A true CN107404295A (en) | 2017-11-28 |
| CN107404295B CN107404295B (en) | 2020-05-05 |
Family
ID=60405004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710555905.9A Expired - Fee Related CN107404295B (en) | 2017-07-10 | 2017-07-10 | HEMT (high electron mobility transistor) tube amplifier with self-powered function and oriented to Internet of things |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107404295B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110220162A1 (en) * | 2010-03-15 | 2011-09-15 | Siivola Edward P | Thermoelectric (TE) Devices/Structures Including Thermoelectric Elements with Exposed Major Surfaces |
| CN103904764A (en) * | 2014-03-17 | 2014-07-02 | 东南大学 | Gallium arsenide-based thermoelectric and photoelectric sensor in self-powered radio frequency receiving and transmitting assembly |
-
2017
- 2017-07-10 CN CN201710555905.9A patent/CN107404295B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110220162A1 (en) * | 2010-03-15 | 2011-09-15 | Siivola Edward P | Thermoelectric (TE) Devices/Structures Including Thermoelectric Elements with Exposed Major Surfaces |
| CN103904764A (en) * | 2014-03-17 | 2014-07-02 | 东南大学 | Gallium arsenide-based thermoelectric and photoelectric sensor in self-powered radio frequency receiving and transmitting assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107404295B (en) | 2020-05-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103563066B (en) | complementary bipolar inverter | |
| CN102130152B (en) | Self-aligned bipolar transistor and manufacturing method thereof | |
| CN105549227A (en) | Terahertz wave space external modulator based on GaN semiconductor material heterojunction field-effect transistor structure | |
| CN110473915A (en) | A kind of preparation method for the SiC-MOS device integrating low potential barrier JBS | |
| CN107425816A (en) | The LDMOS pipe amplifiers with self-powered function of internet of things oriented | |
| CN107425063B (en) | Gallium arsenide-based HEMT device with thermoelectric conversion function and oriented to Internet of things | |
| CN107404295A (en) | The HEMT pipe amplifiers with self-powered function of internet of things oriented | |
| CN107395137A (en) | The metal-oxide-semiconductor amplifier with self-powered function of internet of things oriented | |
| CN107395177A (en) | The MESFET pipe amplifiers with self-powered function of internet of things oriented | |
| CN107293584B (en) | Gallium arsenide-based HBT device with thermoelectric conversion function and oriented to Internet of things | |
| CN104485354B (en) | SOI substrate folds gate insulation tunnelling enhancing transistor and its manufacture method | |
| CN107404290A (en) | The LDMOS power amplifiers with self-powered function of internet of things oriented | |
| CN107293583B (en) | The BJT pipe amplifier with self-powered function of internet of things oriented | |
| CN104425244B (en) | Silicon-germanium heterojunction bipolar transistor manufacturing method | |
| CN102738152B (en) | The strain Si BiCMOS integrated device of a kind of pair of polycrystalline and preparation method | |
| CN102800681B (en) | A kind of SOI SiGe BiCMOS integrated device and preparation method | |
| CN103107185B (en) | Germanium-silicon power heterojunction bipolar transistor (HBT), manufacturing method thereof and germanium-silicon power HBT multi-pointing device | |
| CN107395138A (en) | The HBT pipe amplifiers with self-powered function of internet of things oriented | |
| CN107359152B (en) | The GaAs base of internet of things oriented has the MESFET device of heat to electricity conversion function | |
| CN106098761B (en) | A kind of insulated gate bipolar transistor structure and its manufacturing method | |
| CN104953980B (en) | The SCF and preparation method of gallium nitride base low-leakage current cantilever beam | |
| CN109256437A (en) | A kind of low-temperature bonding photodetector and preparation method thereof | |
| CN112531073B (en) | Preparation method of side-incident SOI (silicon on insulator) based Si/SiGe HPT (high-performance heterojunction bipolar transistor) with photonic crystal structure | |
| CN103050519B (en) | Germanium silicium HBT device and manufacture method | |
| Schuppen et al. | The differential SiGe-HBT |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200505 |