CN103107185B - Germanium-silicon power heterojunction bipolar transistor (HBT), manufacturing method thereof and germanium-silicon power HBT multi-pointing device - Google Patents
Germanium-silicon power heterojunction bipolar transistor (HBT), manufacturing method thereof and germanium-silicon power HBT multi-pointing device Download PDFInfo
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Abstract
The invention discloses a germanium-silicon power heterojunction bipolar transistor (HBT). A collector region C is produced through a low-doping N-type epitaxy technique, the bottom of the collector region C is extended out by a high-doping N-type buried layer. A base region B is formed by a high-doping boron germanium-silicon epitaxial layer. An emitter region E is formed in the way that a medium deposited on a base region forms a window by etching and then N-type doping polycrystalline silicon is deposited. For the field oxide bottom beneath polycrystalline silicon of an outer base region, P-type ion implantation and high-temperature annealing are adopted to change the N-type epitaxy into P-type monocrystalline silicon. The invention further discloses a germanium-silicon power HBT multi-pointing device which is structurally characterized by adopting the mode of CBEBE... BEBC or the mode of CEBECEBE... CEBEC. The invention further discloses a manufacturing method of the germanium-silicon power HBT. According to the method, a P-type ion implantation region is not communicated with a P-type ion implantation isolation region outside the device, and base-collector medium capacitance is significantly reduced. By means of the multi-pointing structure, base and/or collector resistance of a high-output power device as well as base-collector junction capacity can be optimized and maximum output power and power gain can be obtained.
Description
Technical field
The present invention relates to semiconductor integrated circuit field, particularly a kind of germanium silicon power HBT.The invention still further relates to the manufacture method of described germanium silicon power HBT, and the germanium silicon power HBT many fingers device formed by germanium silicon power HBT.
Background technology
Conventional germanium silicium HBT requirement on devices has cut-off frequency high as far as possible under certain puncture voltage, major effect cut-off frequency be transit time of the depletion region that base and base-collector region knot are formed.Cut-off frequency and transit time are inversely proportional to, and the transit time is proportional to the width of base and knot depletion region.Knot width of depletion region is directly proportional to the puncture voltage of emitter to collector electrode again.So, in order to obtain higher cut-off frequency under identical puncture voltage, need base width more narrow better.Meanwhile, emitter region-base knot also needs more shallow, to meet high frequency requirements.
The requirement of power device is then different, and it needs sufficiently high power output and power gain.Power output is directly proportional to the gross area of emitter, usually adopts for this reason and refers to structure more.And power gain is except being directly proportional to cut-off frequency, be also inversely proportional to base resistance and base-collector region electric capacity.Wholely refer to that structure base resistance and base-collector region electric capacity are the keys obtaining high-gain and realize commercial Application so reduce as far as possible more.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of germanium silicon power HBT and germanium silicon power HBT many fingers device, base-collector junction dielectric capacitance can be reduced, the base stage of the large power output device of optimization and/or collector resistance, obtain peak power output and power gain; For this reason, the present invention also provides a kind of manufacture method of described germanium silicon power HBT.
For solving the problems of the technologies described above, germanium silicon power HBT of the present invention is formed in P-type silicon substrate, and active area is isolated by field oxygen, and described HBT comprises:
One collector region, by the n type buried layer be formed in P-type silicon substrate, is formed on n type buried layer and is added that the first N-type ion implanted region and the second N-type ion implanted region form by the N-type extension that field oxygen is isolated; Described first N-type ion implanted region is positioned at the outer Yanzhong of N-type on n type buried layer and is connected to form low-resistance channel with described n type buried layer, for n type buried layer is drawn out to silicon face, and the outer Yanzhong of the N-type between the isolation of field oxygen, described second N-type ion implanted region; The doping content of described n type buried layer is greater than the doping content of described N-type extension;
One base, is made up of the germanium silicon epitaxial layer be formed in N-type extension, and it comprises an intrinsic base region and an outer base area, and described intrinsic base region and collector region are formed and contact, and described outer base area is formed at oxygen top, described field and for the formation of base electrode; Described germanium silicon epitaxial layer comprises silicon buffer layer, germanium silicon layer and silicon cap layer, and described germanium silicon layer and silicon cap layer are respectively doped with boron, and the doping content of germanium silicon layer is greater than the doping content of silicon cap layer;
One emitter region, is made up of the polysilicon being formed at intrinsic base region top, and contacts with intrinsic base region formation, forms EB junction after carrying out the annealing of N-type ion implantation in described emitter-polysilicon;
0.5 ~ 5 micron, periphery place apart from n type buried layer is formed with P type ion implantation isolated area, and described P type ion implantation isolated area is positioned at the below of an oxygen and is connected with field oxygen and P-type silicon substrate; The outer Yanzhong of N-type be positioned at bottom the field oxygen under base stage is formed with a P type ion implanted region.
The present invention also provides the manufacture method of germanium silicon power HBT, comprises the steps:
Step one, it is 10 that P-type silicon substrate is carried out dosage
15cm
-2~ 10
16cm
-2, energy is the N-type ion implantation of 50keV ~ 100keV, then carries out high annealing, temperature is between 1050 DEG C ~ 1150 DEG C, and annealing time, more than 60 minutes, forms n type buried layer;
Step 2, on n type buried layer, growth thickness is 0.8 μm ~ 2 μm, doping content is 10
15cm
-3~ 10
16cm
-3low-doped n type extension;
Step 3, on n type buried layer, implantation dosage is 10
15cm
-2~ 10
16cm
-2, energy is the N-type ion of 50keV ~ 100keV, forms the first N-type ion implanted region;
Step 4, forms P type ion implantation isolated area in device periphery apart from n type buried layer 0.5 ~ 5 micron of position for the formation of field oxygen, is formed with a P type ion implanted region in outer base area for the formation of the outer Yanzhong of the below N-type at oxygen place, field;
Step 5, carry out thermal oxidation and form field oxygen isolation, oxidated layer thickness is at 5000 ~ 15000 dusts;
Step 6, selection N-type ion implantation is carried out in the outer Yanzhong of N-type between oxygen isolation on the scene, forms the second N-type ion implanted region of low resistance base;
Step 7, silicon oxide deposition and polysilicon, open the region needing long monocrystalline, grow germanium silicon epitaxial layer by epitaxy, this germanium silicon epitaxial layer is divided into silicon buffer layer, germanium silicon layer and silicon cap layer, and wherein germanium silicon layer and silicon cap layer are respectively doped with boron; The thickness of described silicon buffer layer is 100 ~ 300 dusts; The thickness of described germanium silicon layer is 400 ~ 800 dusts, wherein 100 ~ 300 dust doped with boron, and doping content is 2 × 10
19cm
-3~ 6 × 10
19cm
-3; The thickness of described silicon cap layer is 300 ~ 500 dusts, and wherein doping content is 10
15cm
-3~ 10
17cm
-3;
Step 8, deposition dielectric film in germanium silicon epitaxial layer, etching forms emitter window; Described deielectric-coating is silica, or silicon nitride, or silica adds silicon nitride, or silicon oxynitride adds silicon nitride;
Step 9, under aerobic environment, short annealing forms the silicon oxide layer of 5 ~ 10 dusts, then deposit doped polycrystalline silicon in place, and priority ion implantation phosphorus and arsenic, form polysilicon emitter by chemical wet etching, and carry out the outer base area P type ion implantation of self-alignment emitter polysilicon;
Step 10, carry out annealing and advance, temperature is 900 ~ 1100 DEG C, and the time is 10 ~ 100 seconds, and enter intrinsic base region after the phosphorus in emitter-polysilicon and arsenic are pushed through silicon cap layer, Formation Depth is at the EB junction of 300 ~ 500 dusts;
Step 11, depositing silicide alloy-layer, adopts contact hole technique to be connected with collector electrode emitter, base stage with metal connecting line technique.
The invention provides a kind of many fingers device of germanium silicon power HBT, it is described that how finger device is made up of multiple Ge-Si heterojunction bipolar transistor single tube, comprise two collector electrodes, described collector electrode lays respectively at the outermost referring to device more, comprise at least two emitters inside two collector electrodes, respectively there is a base stage both sides of each emitter;
Describedly refer to that the single tube structure of device comprises more:
One collector region, by the n type buried layer be formed in P-type silicon substrate, is formed on n type buried layer and is added that the first N-type ion implanted region and the second N-type ion implanted region form by the N-type extension that field oxygen is isolated; Described first N-type ion implanted region is positioned at the outer Yanzhong of N-type on n type buried layer and is connected to form low-resistance channel with described n type buried layer, and described second N-type ion implanted region is positioned at the outer Yanzhong of N-type under emitter-window and is connected with n type buried layer; The doping content of described n type buried layer is greater than the doping content of described N-type extension;
One base, is made up of the germanium silicon epitaxial layer be formed in N-type extension, and it comprises an intrinsic base region and an outer base area, and described intrinsic base region and collector region are formed and contact, and described outer base area is formed at oxygen top, described field and for the formation of base electrode; Described germanium silicon epitaxial layer comprises silicon buffer layer, germanium silicon layer and silicon cap layer, and described germanium silicon layer and silicon cap layer are respectively doped with boron, and the doping content of germanium silicon layer is greater than the doping content of silicon cap layer;
One emitter region, is made up of the polysilicon being formed at intrinsic base region top, and contacts with intrinsic base region formation, forms EB junction after carrying out the annealing of N-type ion implantation in described emitter-polysilicon;
Describedly refer to that the outer Yanzhong of N-type bottom the field oxygen under device base stage is formed with a P type ion implanted region, described P type ion implanted region, the first N-type ion implanted region are connected by continuous print n type buried layer with the second N-type ion implanted region more; 0.5 ~ 5 micron, periphery place apart from n type buried layer is formed with P type ion implantation isolated area, and described P type ion implantation isolated area is positioned at the below of an oxygen and is connected with field oxygen and P-type silicon substrate; Described P type ion implanted region and P type ion implantation isolated area mutually isolated.
The invention provides many fingers device of another kind of germanium silicon power HBT, it is described that how finger device is made up of multiple Ge-Si heterojunction bipolar transistor single tube, comprise at least two collector electrodes, a base stage and two emitters are comprised between two adjacent collector electrodes, described base stage is positioned at the centre of emitter, refers to that the outermost of device is collector electrode more;
Describedly refer to that the single tube structure of device comprises more:
One collector region, by the n type buried layer be formed in P-type silicon substrate, is formed on n type buried layer and is added that the first N-type ion implanted region and the second N-type ion implanted region form by the N-type extension that field oxygen is isolated; Described first N-type ion implanted region is positioned at the outer Yanzhong of N-type on n type buried layer and is connected to form low-resistance channel with described n type buried layer, and described second N-type ion implanted region is positioned at the outer Yanzhong of N-type under emitter-window and is connected with n type buried layer; The doping content of described n type buried layer is greater than the doping content of described N-type extension;
One base, is made up of the germanium silicon epitaxial layer be formed in N-type extension, and it comprises an intrinsic base region and an outer base area, and described intrinsic base region and collector region are formed and contact, and described outer base area is formed at oxygen top, described field and for the formation of base electrode; Described germanium silicon epitaxial layer comprises silicon buffer layer, germanium silicon layer and silicon cap layer, and described germanium silicon layer and silicon cap layer are respectively doped with boron, and the doping content of germanium silicon layer is greater than the doping content of silicon cap layer;
One emitter region, is made up of the polysilicon being formed at intrinsic base region top, and contacts with intrinsic base region formation, forms EB junction after carrying out the annealing of N-type ion implantation in described emitter-polysilicon;
Describedly refer to that the outer Yanzhong of N-type bottom the field oxygen under device base stage is formed with a P type ion implanted region, described P type ion implanted region, the first N-type ion implanted region are connected by continuous print n type buried layer with the second N-type ion implanted region more; 0.5 ~ 5 micron, periphery place apart from n type buried layer is formed with P type ion implantation isolated area, and described P type ion implantation isolated area is positioned at the below of an oxygen and is connected with field oxygen and P-type silicon substrate; Described P type ion implanted region and P type ion implantation isolated area mutually isolated.
The invention provides many fingers device of another germanium silicon power HBT, it is described that how finger device is made up of multiple Ge-Si heterojunction bipolar transistor single tube, comprise at least two collector electrodes, a base stage and two emitters are comprised between two adjacent collector electrodes, described base stage is positioned at the centre of emitter, refers to that the outermost of device is collector electrode more;
Describedly refer to that the single tube structure of device comprises more:
One collector region, by the n type buried layer be formed in P-type silicon substrate, is formed on n type buried layer and is added that the first N-type ion implanted region and the second N-type ion implanted region form by the N-type extension that field oxygen is isolated; Described first N-type ion implanted region is positioned at the outer Yanzhong of N-type on n type buried layer and is connected to form low-resistance channel with described n type buried layer, and described second N-type ion implanted region is positioned at the outer Yanzhong of N-type under emitter-window and is connected with n type buried layer; The doping content of described n type buried layer is greater than the doping content of described N-type extension;
One base, is made up of the germanium silicon epitaxial layer be formed in N-type extension, and it comprises an intrinsic base region and an outer base area, and described intrinsic base region and collector region are formed and contact, and described outer base area is formed at oxygen top, described field and for the formation of base electrode; Described germanium silicon epitaxial layer comprises silicon buffer layer, germanium silicon layer and silicon cap layer, and described germanium silicon layer and silicon cap layer are respectively doped with boron, and the doping content of germanium silicon layer is greater than the doping content of silicon cap layer;
One emitter region, is made up of the polysilicon being formed at intrinsic base region top, and contacts with intrinsic base region formation, forms EB junction after carrying out the annealing of N-type ion implantation in described emitter-polysilicon;
Describedly refer to that the outer Yanzhong of N-type bottom the field oxygen under device base stage is formed with the P type ion implanted region be connected with P-type silicon substrate more; 0.5 ~ 5 micron, periphery place apart from n type buried layer is formed with P type ion implantation isolated area, and described P type ion implantation isolated area is positioned at the below of an oxygen and contacts with P-type silicon substrate with field oxygen; The first N-type ion implanted region between P type ion implanted region and the second N-type ion implanted region, the first N-type ion implanted region between P type ion implanted region and P type ion implantation isolated area are connected respectively by discrete n type buried layer with the second N-type ion implanted region; Described P type ion implanted region is not communicated with P type ion implantation isolated area.
Beneficial effect of the present invention is:
1, the present invention comprehensively have employed low-resistance n type buried layer passage, low-doped N-type epitaxial growth monocrystalline silicon, the low resistance base of selective N type ion implantation formation and the SiGe base of highly doped boron, greatly reduce base stage and the collector resistance of device, and base-collector junction junction capacitance;
2, the present invention passes through ion implantation, N-type epitaxy layer bottom base stage end oxygen forms P type ion implanted region, and P type ion implanted region is not communicated with the P type ion implantation isolated area outside device, greatly can reduce the base-collector junction dielectric capacitance formed by outer base area polysilicon-field oxygen-N-type extension;
3, of the present inventionly refer to that structure can the base stage of the large power output device of optimization and/or collector resistance more, and base-collector junction junction capacitance, obtain peak power output and power gain, thus the direct current of optimization device and radio-frequency performance, be used as the power amplifying device in high speed, high-output power, high gain circuit.
Accompanying drawing explanation
Below in conjunction with accompanying drawing and embodiment, the present invention is further detailed explanation:
Fig. 1-Fig. 4 is the device schematic cross-section of germanium silicon power HBT single tube in manufacture process of the embodiment of the present invention;
Fig. 5 is the structural representation of the first germanium silicon power HBT many fingers device of the embodiment of the present invention;
Fig. 6 is the structural representation of the second germanium silicon power HBT many fingers device of the embodiment of the present invention;
Fig. 7 is the structural representation of the third germanium silicon power HBT many fingers device of the embodiment of the present invention.
Embodiment
The manufacture method of germanium silicon power HBT of the present invention, comprises the steps:
Step one, P-type silicon substrate 1 carries out high dose (10
15cm
-2~ 10
16cm
-2), the N-type ion implantation of middle energy (50KeV ~ 100KeV), high annealing is carried out after injection, temperature is between 1050 DEG C ~ 1150 DEG C, annealing time is more than 60 minutes, form low-resistance n type buried layer 2 passage, inject ion preferably arsenic, it enough weighs and can prevent from spreading further in follow-up annealing process, can not damage significantly again to silica-based generation;
Step 2, n type buried layer carries out the epitaxial growth of low N-doping, and thickness is between 0.8 μm ~ 2.0 μm, and doping content is 10
15cm
-3~ 10
16cm
-3;
Step 3, n type buried layer carries out high dose (10
15cm
-2~ 10
16cm
-2), the ion implantation of middle energy (50keV ~ 100keV), inject ion preferably phosphorus, form the first N-type ion implanted region 5 connecting n type buried layer 2;
Step 4, low dosage (10 in carrying out outside 0.5 μm ~ 5 μm around device
14cm
-2~ 5 × 10
15cm
-2), the P type ion implantation of high-energy (150keV ~ 500keV), form P type ion implantation isolated area 7 pairs of devices and carry out knot and isolates; A P type ion implanted region 11 is formed in the below N-type extension 3 of outer base area for the formation of oxygen place, field;
Step 5, carries out thermal oxidation and forms field oxygen 4 and isolate, oxidated layer thickness at 5000 ~ 15000 dusts, as shown in Figure 1;
Step 6, carries out selection N-type ion implantation under the emitter-window between oxygen 4 isolation on the scene, forms the second N-type ion implanted region 6 of low resistance base;
Step 7, silicon oxide deposition and the young crystalline substance of polysilicon, open with dry quarter and wet etching the region needing long monocrystalline, then grow germanium silicon epitaxial layer 8 by epitaxy; Germanium silicon epitaxial layer 8 can be subdivided into three layers, is respectively silicon buffer layer, germanium silicon layer, silicon cap layer, and wherein germanium silicon layer has highly doped boron and silicon cap layer has low-doped boron; Wherein, silicon buffer layer is 100 ~ 300 dusts, and germanium silicon layer is 400 ~ 800 dusts, wherein 100 ~ 300 dust boron-dopings, and doping content is 2 × 10
19cm
-3~ 6 × 10
19cm
-3, silicon cap layer is 300 ~ 500 dusts, and boron doping concentration is 10
15cm
-3~ 10
17cm
-3, high boron doping concentration district must be appropriate with silicon cap layer position, ensures that thermal annealing forms suitable EB junction, as shown in Figure 2;
Step 8, deposition dielectric film in germanium silicon epitaxial layer 8, etching forms emitter window; Described deielectric-coating is silica, or silicon nitride, or silica adds silicon nitride, or silicon oxynitride adds silicon nitride;
Step 9, under aerobic environment, short annealing forms the silicon oxide layer (not shown in Fig. 3) of 5 ~ 10 dusts, then deposit doped polycrystalline silicon in place, and priority ion implantation phosphorus and arsenic, polysilicon emitter 9 and side wall is formed by chemical wet etching, and the outer base area P type ion implantation 10 of carrying out self-alignment emitter polysilicon is to reduce base resistance, as shown in Figure 3;
Step 10, carry out annealing and advance, temperature is 900 ~ 1100 DEG C, and the time is 10 ~ 100 seconds, and enter intrinsic base region after the phosphorus in emitter-polysilicon and arsenic are pushed through silicon cap layer, Formation Depth is at the EB junction of 300 ~ 500 dusts;
Step 11, depositing silicide alloy-layer, adopts contact hole technique to be connected with collector electrode emitter, base stage with metal connecting line technique.
The germanium silicon power HBT single tube manufactured by said method, as shown in Figure 4, be formed in P-type silicon substrate 1, active area is isolated by field oxygen 4, and described triode comprises:
One collector region, by the n type buried layer 2 be formed in P-type silicon substrate 1, is formed on n type buried layer 2 and is added that the first N-type ion implanted region 5 and the second N-type ion implanted region 6 form by the N-type extension 3 that field oxygen 4 is isolated; Described first N-type ion implanted region 5 be arranged in described N-type extension 3 on n type buried layer 2 and and n type buried layer be connected to form low-resistance channel, for n type buried layer is drawn out to silicon face, in the N-type extension 3 of described second N-type ion implanted region 6 between field oxygen 4;
One base, is made up of the germanium silicon epitaxial layer 8 be formed in N-type extension 3, and it comprises an intrinsic base region and an outer base area, and described intrinsic base region and collector region are formed and contact, and described outer base area is formed at oxygen 4 top, described field and for the formation of base electrode;
One emitter region, is made up of the polysilicon being formed at intrinsic base region top, and contacts with intrinsic base region formation, forms EB junction after carrying out the annealing of N-type ion implantation in described emitter-polysilicon 9;
0.5 ~ 5 micron, periphery place apart from n type buried layer 2 is formed with P type ion implantation isolated area 7, and described P type ion implantation isolated area 7 is positioned at the below of an oxygen 4 and is connected with field oxygen 4 and P-type silicon substrate 1; The N-type extension 3 be arranged in bottom the field oxygen 4 under base stage is formed with a P type ion implanted region 11.
Many fingers device of the first germanium silicon power HBT of the present invention, Fig. 5 provides two of two emitters and refers to structure, comprises two collector electrodes, and described collector electrode lays respectively at the outermost referring to device more, comprise two emitters inside two collector electrodes, respectively there is a base stage both sides of each emitter.Emitter E, base stage B, the collector electrode C of many fingers device Ge-Si heterojunction bipolar transistor of this germanium silicon power HBT can be expressed as CBEBE ... BEBC, Fig. 5 adopt the minimum of this form to refer to structure more.The described single tube structure referring to device as previously shown, does not repeat them here more.
Many fingers device of second and third kind of germanium silicon power HBT of the present invention, Fig. 6 and Fig. 7 provides four of four emitters and refers to structure, comprise three collector electrodes and two base stages, a base stage and two emitters are comprised between two adjacent collector electrodes, described base stage is positioned at the centre of emitter, refers to that the outermost of device is collector electrode more.Emitter E, base stage B, the collector electrode C of many fingers device Ge-Si heterojunction bipolar transistor of this germanium silicon power HBT can be expressed as CEBE ... CEBEC, adopts the minimal structure of this form to be two finger structure C EBEC.The described single tube structure referring to device as previously shown, does not repeat them here more.
In the aforementioned device of finger more than three kinds, a P type ion implanted region 11 is formed bottom field oxygen 4 under many fingers device base stage, 0.5 ~ 5 micron, periphery place apart from n type buried layer 2 is formed with P type ion implantation isolated area 7, and described P type ion implantation isolated area 7 is positioned at the below of an oxygen 4 and is connected with field oxygen 4 and P-type silicon substrate 1; Described P type ion implanted region 11 is not communicated with P type ion implantation isolated area 7, can greatly be reduced like this by the base-collector junction dielectric capacitance that P type polysilicon base-field oxygen-N-type extension is formed.
In first two many fingers device, N-type ion implanted region 5, described P type ion implanted region 11, first is connected by continuous print n type buried layer 2 with the second N-type ion implanted region 6.The third refers to that the difference of device and the second many fingers device is more, the third refers to that the n type buried layer 2 in device is discrete more, and the first N-type ion implanted region 5 between P type ion implanted region 11 and the second N-type ion implanted region 6, the first N-type ion implanted region 5 between P type ion implanted region 11 and P type ion implantation isolated area 7 are connected respectively by discrete n type buried layer 2 with the second N-type ion implanted region 6.
The present invention comprehensively have employed low-resistance n type buried layer passage, low-doped N-type epitaxial growth monocrystalline silicon, the low resistance base of selective N type ion implantation formation and the SiGe base of highly doped boron, greatly reduce base stage and the collector resistance of device, and base-collector junction junction capacitance; The present invention passes through ion implantation, N-type epitaxy layer bottom base stage end oxygen forms P type ion implanted region, and P type ion implanted region is not communicated with the P type ion implantation isolated area outside device, greatly can reduce the base-collector junction dielectric capacitance formed by outer base area polysilicon-field oxygen-N-type extension; Of the present inventionly refer to that structure can the base stage of the large power output device of optimization and/or collector resistance more, and base-collector junction junction capacitance, obtain peak power output and power gain, thus the direct current of optimization device and radio-frequency performance, be used as the power amplifying device in high speed, high-output power, high gain circuit.
Above by specific embodiment to invention has been detailed description, but these are not construed as limiting the invention.Without departing from the principles of the present invention, those skilled in the art can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (10)
1. a germanium silicon power HBT, is formed in P-type silicon substrate, and active area is isolated by field oxygen, it is characterized in that, described HBT comprises:
One collector region, by the n type buried layer be formed in P-type silicon substrate, is formed on n type buried layer and is added that the first N-type ion implanted region and the second N-type ion implanted region form by the N-type extension that field oxygen is isolated; Described first N-type ion implanted region is on n type buried layer and the outer Yanzhong of N-type be between the isolation of oxygen, and for n type buried layer is drawn out to silicon face, described second N-type ion implanted region is positioned at the outer Yanzhong of N-type under emitter-window and is connected with n type buried layer; The doping content of described n type buried layer is greater than the doping content of described N-type extension;
One base, is made up of the germanium silicon epitaxial layer be formed in N-type extension, and it comprises an intrinsic base region and an outer base area, and described intrinsic base region and collector region are formed and contact, and described outer base area is formed at oxygen top, described field and for the formation of base electrode; Described germanium silicon epitaxial layer comprises silicon buffer layer, germanium silicon layer and silicon cap layer, and described germanium silicon layer and silicon cap layer are respectively doped with boron, and the doping content of germanium silicon layer is greater than the doping content of silicon cap layer;
One emitter region, is made up of the polysilicon being formed at intrinsic base region top, and contacts with intrinsic base region formation, forms EB junction after carrying out the annealing of N-type ion implantation in described emitter-polysilicon;
0.5 ~ 5 micron, periphery place apart from n type buried layer is formed with P type ion implantation isolated area, and described P type ion implantation isolated area is positioned at the below of an oxygen and is connected with field oxygen and P-type silicon substrate; The outer Yanzhong of N-type be positioned at bottom the field oxygen under base stage is formed with a P type ion implanted region.
2. germanium silicon power HBT according to claim 1, is characterized in that, the injection ion of described n type buried layer is arsenic, and implantation dosage is 10
15cm
-2~ 10
16cm
-2, Implantation Energy is 50keV ~ 100keV.
3. germanium silicon power HBT according to claim 1, is characterized in that, the doping content of described N-type extension is 10
15cm
-3~ 10
16cm
-3, thickness is 0.8 μm ~ 2 μm.
4. germanium silicon power HBT according to claim 1, is characterized in that, the injection ion of described first N-type ion implanted region is phosphorus, and implantation dosage is 10
15cm
-2~ 10
16cm
-2, Implantation Energy is 50keV ~ 100keV.
5. germanium silicon power HBT according to claim 1, is characterized in that, the oxidated layer thickness of described field oxygen is 5000 ~ 15000 dusts.
6. germanium silicon power HBT according to claim 1, is characterized in that, the thickness of described silicon buffer layer is 100 ~ 300 dusts; The thickness of described germanium silicon layer is 400 ~ 800 dusts, wherein 100 ~ 300 dust doped with boron, and doping content is 2 × 10
19cm
-3~ 6 × 10
19cm
-3; The thickness of described silicon cap layer is 300 ~ 500 dusts, and wherein doping content is 10
15cm
-3~ 10
17cm
-3.
7. a manufacture method for germanium silicon power HBT, is characterized in that, comprises the steps:
Step one, it is 10 that P-type silicon substrate is carried out dosage
15cm
-2~ 10
16cm
-2, energy is the N-type ion implantation of 50keV ~ 100keV, then carries out high annealing, temperature is between 1050 DEG C ~ 1150 DEG C, and annealing time, more than 60 minutes, forms n type buried layer;
Step 2, on n type buried layer, growth thickness is 0.8 μm ~ 2 μm, doping content is 10
15cm
-3~ 10
16cm
-3low-doped n type extension;
Step 3, in the N-type epitaxy layer on n type buried layer, implantation dosage is 10
15cm
-2~ 10
16cm
-2, energy is the N-type ion of 50keV ~ 100keV, forms the first N-type ion implanted region;
Step 4, forms P type ion implantation isolated area in device periphery apart from n type buried layer 0.5 ~ 5 micron of position for the formation of field oxygen, is formed with a P type ion implanted region in outer base area for the formation of the outer Yanzhong of the below N-type at oxygen place, field;
Step 5, carry out thermal oxidation and form field oxygen isolation, oxidated layer thickness is at 5000 ~ 15000 dusts;
Step 6, selection N-type ion implantation is carried out in the outer Yanzhong of N-type between oxygen isolation on the scene, forms the second N-type ion implanted region of low resistance base;
Step 7, silicon oxide deposition and polysilicon, open the region needing long monocrystalline, grow germanium silicon epitaxial layer by epitaxy, this germanium silicon epitaxial layer is divided into silicon buffer layer, germanium silicon layer and silicon cap layer, and wherein germanium silicon layer and silicon cap layer are respectively doped with boron; The thickness of described silicon buffer layer is 100 ~ 300 dusts; The thickness of described germanium silicon layer is 400 ~ 800 dusts, wherein 100 ~ 300 dust doped with boron, and doping content is 2 × 10
19cm
-3~ 6 × 10
19cm
-3; The thickness of described silicon cap layer is 300 ~ 500 dusts, and wherein doping content is 10
15cm
-3~ 10
17cm
-3;
Step 8, deposition dielectric film in germanium silicon epitaxial layer, etching forms emitter window; Described deielectric-coating is silica, or silicon nitride, or silica adds silicon nitride, or silicon oxynitride adds silicon nitride;
Step 9, under aerobic environment, short annealing forms the silicon oxide layer of 5 ~ 10 dusts, then deposit doped polycrystalline silicon in place, and priority ion implantation phosphorus and arsenic, form polysilicon emitter by chemical wet etching, and carry out the outer base area P type ion implantation of self-alignment emitter polysilicon;
Step 10, carry out annealing and advance, temperature is 900 ~ 1100 DEG C, and the time is 10 ~ 100 seconds, and enter intrinsic base region after the phosphorus in emitter-polysilicon and arsenic are pushed through silicon cap layer, Formation Depth is at the EB junction of 300 ~ 500 dusts;
Step 11, depositing silicide alloy-layer, adopts contact hole technique to be connected with collector electrode emitter, base stage with metal connecting line technique.
8. many fingers device of germanium silicon power HBT, is made up of multiple Ge-Si heterojunction bipolar transistor single tube, it is characterized in that,
Described how finger device comprises two collector electrodes, and described collector electrode lays respectively at the outermost referring to device more, and comprise at least two emitters inside two collector electrodes, respectively there is a base stage both sides of each emitter;
Describedly refer to that the single tube structure of device comprises more:
One collector region, by the n type buried layer be formed in P-type silicon substrate, is formed on n type buried layer and is added that the first N-type ion implanted region and the second N-type ion implanted region form by the N-type extension that field oxygen is isolated; Described first N-type ion implanted region is positioned at the outer Yanzhong of N-type on n type buried layer and is connected to form low-resistance channel with described n type buried layer, and described second N-type ion implanted region is positioned at the outer Yanzhong of N-type under emitter-window and is connected with n type buried layer; The doping content of described n type buried layer is greater than the doping content of described N-type extension;
One base, is made up of the germanium silicon epitaxial layer be formed in N-type extension, and it comprises an intrinsic base region and an outer base area, and described intrinsic base region and collector region are formed and contact, and described outer base area is formed at oxygen top, described field and for the formation of base electrode; Described germanium silicon epitaxial layer comprises silicon buffer layer, germanium silicon layer and silicon cap layer, and described germanium silicon layer and silicon cap layer are respectively doped with boron, and the doping content of germanium silicon layer is greater than the doping content of silicon cap layer;
One emitter region, is made up of the polysilicon being formed at intrinsic base region top, and contacts with intrinsic base region formation, forms EB junction after carrying out the annealing of N-type ion implantation in described emitter-polysilicon;
Describedly refer to that the outer Yanzhong of N-type bottom the field oxygen under device base stage is formed with a P type ion implanted region, described P type ion implanted region, the first N-type ion implanted region are connected by continuous print n type buried layer with the second N-type ion implanted region more; 0.5 ~ 5 micron, periphery place apart from n type buried layer is formed with P type ion implantation isolated area, and described P type ion implantation isolated area is positioned at the below of an oxygen and is connected with field oxygen and P-type silicon substrate; Described P type ion implanted region and P type ion implantation isolated area mutually isolated.
9. many fingers device of germanium silicon power HBT, is made up of multiple Ge-Si heterojunction bipolar transistor single tube, it is characterized in that:
Described how finger device comprises at least two collector electrodes, and comprise a base stage and two emitters between two adjacent collector electrodes, described base stage is positioned at the centre of emitter, refers to that the outermost of device is collector electrode more;
Describedly refer to that the single tube structure of device comprises more:
One collector region, by the n type buried layer be formed in P-type silicon substrate, is formed on n type buried layer and is added that the first N-type ion implanted region and the second N-type ion implanted region form by the N-type extension that field oxygen is isolated; Described first N-type ion implanted region is positioned at the outer Yanzhong of N-type on n type buried layer and is connected to form low-resistance channel with described n type buried layer, and described second N-type ion implanted region is positioned at the outer Yanzhong of N-type under emitter-window and is connected with n type buried layer; The doping content of described n type buried layer is greater than the doping content of described N-type extension;
One base, is made up of the germanium silicon epitaxial layer be formed in N-type extension, and it comprises an intrinsic base region and an outer base area, and described intrinsic base region and collector region are formed and contact, and described outer base area is formed at oxygen top, described field and for the formation of base electrode; Described germanium silicon epitaxial layer comprises silicon buffer layer, germanium silicon layer and silicon cap layer, and described germanium silicon layer and silicon cap layer are respectively doped with boron, and the doping content of germanium silicon layer is greater than the doping content of silicon cap layer;
One emitter region, is made up of the polysilicon being formed at intrinsic base region top, and contacts with intrinsic base region formation, forms EB junction after carrying out the annealing of N-type ion implantation in described emitter-polysilicon;
Describedly refer to that the outer Yanzhong of N-type bottom the field oxygen under device base stage is formed with a P type ion implanted region, described P type ion implanted region, the first N-type ion implanted region are connected by continuous print n type buried layer with the second N-type ion implanted region more; 0.5 ~ 5 micron, periphery place apart from n type buried layer is formed with P type ion implantation isolated area, and described P type ion implantation isolated area is positioned at the below of an oxygen and is connected with field oxygen and P-type silicon substrate; Described P type ion implanted region and P type ion implantation isolated area mutually isolated.
10. many fingers device of germanium silicon power HBT, is made up of multiple Ge-Si heterojunction bipolar transistor single tube, it is characterized in that:
Described how finger device comprises at least two collector electrodes, and comprise a base stage and two emitters between two adjacent collector electrodes, described base stage is positioned at the centre of emitter, refers to that the outermost of device is collector electrode more;
Describedly refer to that the single tube structure of device comprises more:
One collector region, by the n type buried layer be formed in P-type silicon substrate, is formed on n type buried layer and is added that the first N-type ion implanted region and the second N-type ion implanted region form by the N-type extension that field oxygen is isolated; Described first N-type ion implanted region is positioned at the outer Yanzhong of N-type on n type buried layer and is connected to form low-resistance channel with described n type buried layer, and described second N-type ion implanted region is positioned at the outer Yanzhong of N-type under emitter-window and is connected with n type buried layer; The doping content of described n type buried layer is greater than the doping content of described N-type extension;
One base, is made up of the germanium silicon epitaxial layer be formed in N-type extension, and it comprises an intrinsic base region and an outer base area, and described intrinsic base region and collector region are formed and contact, and described outer base area is formed at oxygen top, described field and for the formation of base electrode; Described germanium silicon epitaxial layer comprises silicon buffer layer, germanium silicon layer and silicon cap layer, and described germanium silicon layer and silicon cap layer are respectively doped with boron, and the doping content of germanium silicon layer is greater than the doping content of silicon cap layer;
One emitter region, is made up of the polysilicon being formed at intrinsic base region top, and contacts with intrinsic base region formation, forms EB junction after carrying out the annealing of N-type ion implantation in described emitter-polysilicon;
Describedly refer to that the outer Yanzhong of N-type bottom the field oxygen under device base stage is formed with the P type ion implanted region be connected with P-type silicon substrate more; 0.5 ~ 5 micron, periphery place apart from n type buried layer is formed with P type ion implantation isolated area, and described P type ion implantation isolated area is positioned at the below of an oxygen and contacts with P-type silicon substrate with field oxygen; The first N-type ion implanted region between P type ion implanted region and the second N-type ion implanted region, the first N-type ion implanted region between P type ion implanted region and P type ion implantation isolated area are connected respectively by discrete n type buried layer with the second N-type ion implanted region; Described P type ion implanted region is not communicated with P type ion implantation isolated area.
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| CN101459076A (en) * | 2007-12-13 | 2009-06-17 | 上海华虹Nec电子有限公司 | Preparation for SiGe HBT transistor |
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| CN102231379A (en) * | 2009-12-21 | 2011-11-02 | 上海华虹Nec电子有限公司 | SiGe HBT (Heterojunction Bipolar Transistor) multi-finger structure |
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| US5250826A (en) * | 1992-09-23 | 1993-10-05 | Rockwell International Corporation | Planar HBT-FET Device |
| CN101459076A (en) * | 2007-12-13 | 2009-06-17 | 上海华虹Nec电子有限公司 | Preparation for SiGe HBT transistor |
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