TWI560873B - Bipolar junction transistor - Google Patents

Bipolar junction transistor

Info

Publication number
TWI560873B
TWI560873B TW105113784A TW105113784A TWI560873B TW I560873 B TWI560873 B TW I560873B TW 105113784 A TW105113784 A TW 105113784A TW 105113784 A TW105113784 A TW 105113784A TW I560873 B TWI560873 B TW I560873B
Authority
TW
Taiwan
Prior art keywords
bipolar junction
junction transistor
transistor
bipolar
junction
Prior art date
Application number
TW105113784A
Other languages
Chinese (zh)
Other versions
TW201740569A (en
Inventor
Ching-Lin Chan
Cheng-Chi Lin
Yu-Chin Chien
Original Assignee
Macronix Int Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macronix Int Co Ltd filed Critical Macronix Int Co Ltd
Priority to TW105113784A priority Critical patent/TWI560873B/en
Priority to CN201610883072.4A priority patent/CN107346784A/en
Application granted granted Critical
Publication of TWI560873B publication Critical patent/TWI560873B/en
Publication of TW201740569A publication Critical patent/TW201740569A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
TW105113784A 2016-05-04 2016-05-04 Bipolar junction transistor TWI560873B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW105113784A TWI560873B (en) 2016-05-04 2016-05-04 Bipolar junction transistor
CN201610883072.4A CN107346784A (en) 2016-05-04 2016-10-10 Bipolar junction transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW105113784A TWI560873B (en) 2016-05-04 2016-05-04 Bipolar junction transistor

Publications (2)

Publication Number Publication Date
TWI560873B true TWI560873B (en) 2016-12-01
TW201740569A TW201740569A (en) 2017-11-16

Family

ID=58227202

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105113784A TWI560873B (en) 2016-05-04 2016-05-04 Bipolar junction transistor

Country Status (2)

Country Link
CN (1) CN107346784A (en)
TW (1) TWI560873B (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050184361A1 (en) * 2004-02-20 2005-08-25 Kabushiki Kaisha Toshiba Vertical bipolar transistor and method of manufacturing the same
US20080102592A1 (en) * 2005-12-28 2008-05-01 Sung Woong J Method for manufacturing bipolar transistor
US20120025352A1 (en) * 2010-07-30 2012-02-02 Macronix International Co., Ltd. Bipolar junction transistor devices
US20120032303A1 (en) * 2010-08-05 2012-02-09 Elkareh Badih Bipolar Junction Transistor Based on CMOS Technology
US20120090310A1 (en) * 2009-06-19 2012-04-19 Husky Injection Molding Systems Ltd. Kinematic control in a hydraulic system

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100431167C (en) * 2005-09-09 2008-11-05 联华电子股份有限公司 Bipolar junction transistor and method for manufacturing same
TWI474481B (en) * 2010-01-13 2015-02-21 Macronix Int Co Ltd High β bipolar junction transistor and method of manufature thereof
CN103107185B (en) * 2011-11-11 2015-04-08 上海华虹宏力半导体制造有限公司 Germanium-silicon power heterojunction bipolar transistor (HBT), manufacturing method thereof and germanium-silicon power HBT multi-pointing device
CN103378139B (en) * 2012-04-20 2016-02-03 旺宏电子股份有限公司 Semiconductor structure and preparation method thereof
EP2746799B1 (en) * 2012-12-20 2016-04-20 Nxp B.V. Semiconductor magnetic field sensors
US9590039B2 (en) * 2013-12-20 2017-03-07 United Microelectronics Corp. Semiconductor structure and method for forming the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050184361A1 (en) * 2004-02-20 2005-08-25 Kabushiki Kaisha Toshiba Vertical bipolar transistor and method of manufacturing the same
US20080102592A1 (en) * 2005-12-28 2008-05-01 Sung Woong J Method for manufacturing bipolar transistor
US20120090310A1 (en) * 2009-06-19 2012-04-19 Husky Injection Molding Systems Ltd. Kinematic control in a hydraulic system
US20120025352A1 (en) * 2010-07-30 2012-02-02 Macronix International Co., Ltd. Bipolar junction transistor devices
US20120032303A1 (en) * 2010-08-05 2012-02-09 Elkareh Badih Bipolar Junction Transistor Based on CMOS Technology

Also Published As

Publication number Publication date
CN107346784A (en) 2017-11-14
TW201740569A (en) 2017-11-16

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