SG10201503305PA - Lateral high voltage transistor - Google Patents

Lateral high voltage transistor

Info

Publication number
SG10201503305PA
SG10201503305PA SG10201503305PA SG10201503305PA SG10201503305PA SG 10201503305P A SG10201503305P A SG 10201503305PA SG 10201503305P A SG10201503305P A SG 10201503305PA SG 10201503305P A SG10201503305P A SG 10201503305PA SG 10201503305P A SG10201503305P A SG 10201503305PA
Authority
SG
Singapore
Prior art keywords
high voltage
voltage transistor
lateral high
lateral
transistor
Prior art date
Application number
SG10201503305PA
Inventor
Ray Disney Donald
Kim Jongjib
lin Wen-cheng
Original Assignee
Globalfoundries Sg Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Globalfoundries Sg Pte Ltd filed Critical Globalfoundries Sg Pte Ltd
Priority to SG10201503305PA priority Critical patent/SG10201503305PA/en
Priority to US15/137,018 priority patent/US9741845B2/en
Publication of SG10201503305PA publication Critical patent/SG10201503305PA/en

Links

Classifications

    • H01L29/7816—
    • H01L29/063—
    • H01L29/0634—
    • H01L29/0653—
    • H01L29/0692—
    • H01L29/402—
    • H01L29/66659—
    • H01L29/66681—
    • H01L29/7835—
    • H01L29/665—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
SG10201503305PA 2015-04-27 2015-04-27 Lateral high voltage transistor SG10201503305PA (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
SG10201503305PA SG10201503305PA (en) 2015-04-27 2015-04-27 Lateral high voltage transistor
US15/137,018 US9741845B2 (en) 2015-04-27 2016-04-25 Lateral high voltage transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG10201503305PA SG10201503305PA (en) 2015-04-27 2015-04-27 Lateral high voltage transistor

Publications (1)

Publication Number Publication Date
SG10201503305PA true SG10201503305PA (en) 2016-11-29

Family

ID=57148045

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201503305PA SG10201503305PA (en) 2015-04-27 2015-04-27 Lateral high voltage transistor

Country Status (2)

Country Link
US (1) US9741845B2 (en)
SG (1) SG10201503305PA (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108389906B (en) * 2017-02-03 2023-01-10 联华电子股份有限公司 High voltage metal oxide semiconductor transistor element
US20200227544A1 (en) * 2017-09-28 2020-07-16 Intel Corporation Gallium nitride transistors with drain field plates and their methods of fabrication
TWI632622B (en) * 2017-10-26 2018-08-11 立錡科技股份有限公司 High voltage metal oxide semiconductor device and manufacturing method thereof
DE102017130223B4 (en) 2017-12-15 2020-06-04 Infineon Technologies Ag Semiconductor device with electrically connected planar field-effect transistor cells and associated DC-DC converter
US10483356B2 (en) * 2018-02-27 2019-11-19 Siliconix Incorporated Power semiconductor device with optimized field-plate design
CN109244142A (en) * 2018-09-29 2019-01-18 深圳市南硕明泰科技有限公司 A kind of LDMOS and its manufacturing method
US11195915B2 (en) * 2019-04-15 2021-12-07 Texas Instruments Incorporated Semiconductor devices with a sloped surface
CN112349778B (en) * 2019-08-08 2022-02-22 天津大学 RESURF LDMOS device with HVBN structure
TWI739695B (en) * 2020-06-14 2021-09-11 力旺電子股份有限公司 Level shifter
CN113823694B (en) * 2021-08-19 2023-10-31 电子科技大学 Lateral power semiconductor device integrated with submicron super junction and manufacturing method thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7989890B2 (en) 2006-10-13 2011-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Lateral power MOSFET with high breakdown voltage and low on-resistance
US7508032B2 (en) 2007-02-20 2009-03-24 Taiwan Semiconductor Manufacturing Co., Ltd. High voltage device with low on-resistance
US8159029B2 (en) 2008-10-22 2012-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage device having reduced on-state resistance
US7875930B2 (en) 2009-02-16 2011-01-25 Vanguard International Semiconductor Corporation Semiconductor structure having an enlarged finger shaped region for reducing electric field density and method of manufacturing the same
US8384184B2 (en) 2010-09-15 2013-02-26 Freescale Semiconductor, Inc. Laterally diffused metal oxide semiconductor device
US8541862B2 (en) 2011-11-30 2013-09-24 Freescale Semiconductor, Inc. Semiconductor device with self-biased isolation
US8686509B2 (en) 2012-02-09 2014-04-01 Macronix International Co., Ltd. Semiconductor structure and method for manufacturing the same
US8648416B1 (en) 2012-07-20 2014-02-11 Texas Instruments Incorporated LDMOS sense transistor structure for current sensing at high voltage
TWI476926B (en) 2012-12-25 2015-03-11 Richtek Technology Corp Manufacturing method of lateral double diffused metal oxide semiconductor device

Also Published As

Publication number Publication date
US20160315188A1 (en) 2016-10-27
US9741845B2 (en) 2017-08-22

Similar Documents

Publication Publication Date Title
IL273299B1 (en) Electrode structure for field effect transistor
HK1252208A1 (en) Gate device
GB201608691D0 (en) Electrode
EP3158587A4 (en) Extended-drain structures for high voltage field effect transistors
GB201416403D0 (en) High voltage semiconductor devices
SG10201503305PA (en) Lateral high voltage transistor
GB201510600D0 (en) Voltage regulators
EP3123516A4 (en) Iii-n transistors with enhanced breakdown voltage
PT3353336T (en) Electrode
GB201411621D0 (en) Organic transistor
EP3347915A4 (en) Vertical field-effect transistor
GB201508085D0 (en) Reference voltages
HK1255187A1 (en) Ointment
GB2539645B (en) Voltage monitor
KR102420596B9 (en) Submodule for high voltage battery
TWI562540B (en) Gate potential control circuit
PL2905411T3 (en) Gate
GB201408946D0 (en) Low voltage dielectric
PL3085867T3 (en) Gate
GB201516246D0 (en) Tunnel field effect transistor
GB201514745D0 (en) Voltage source converter
GB201507491D0 (en) Injection devices
GB201622040D0 (en) Voltage dividers
GB2547160B (en) Transistor Devices
PT3353335T (en) Electrode