CN103107185A - Germanium-silicon power heterojunction bipolar transistor (HBT), manufacturing method thereof and germanium-silicon power HBT multi-pointing device - Google Patents

Germanium-silicon power heterojunction bipolar transistor (HBT), manufacturing method thereof and germanium-silicon power HBT multi-pointing device Download PDF

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CN103107185A
CN103107185A CN2011103556720A CN201110355672A CN103107185A CN 103107185 A CN103107185 A CN 103107185A CN 2011103556720 A CN2011103556720 A CN 2011103556720A CN 201110355672 A CN201110355672 A CN 201110355672A CN 103107185 A CN103107185 A CN 103107185A
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CN103107185B (en
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周正良
李�昊
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Shanghai Hua Hong NEC Electronics Co Ltd
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Abstract

The invention discloses a germanium-silicon power heterojunction bipolar transistor (HBT). A collector region C is produced through a low-doping N-type epitaxy technique, the bottom of the collector region C is extended out by a high-doping N-type buried layer. A base region B is formed by a high-doping boron germanium-silicon epitaxial layer. An emitter region E is formed in the way that a medium deposited on a base region forms a window by etching and then N-type doping polycrystalline silicon is deposited. For the field oxide bottom beneath polycrystalline silicon of an outer base region, P-type ion implantation and high-temperature annealing are adopted to change the N-type epitaxy into P-type monocrystalline silicon. The invention further discloses a germanium-silicon power HBT multi-pointing device which is structurally characterized by adopting the mode of CBEBE... BEBC or the mode of CEBECEBE... CEBEC. The invention further discloses a manufacturing method of the germanium-silicon power HBT. According to the method, a P-type ion implantation region is not communicated with a P-type ion implantation isolation region outside the device, and base-collector medium capacitance is significantly reduced. By means of the multi-pointing structure, base and/or collector resistance of a high-output power device as well as base-collector junction capacity can be optimized and maximum output power and power gain can be obtained.

Description

Germanium silicon power HBT, its manufacture method and germanium silicon power HBT refer to device more
Technical field
The present invention relates to the semiconductor integrated circuit field, particularly a kind of germanium silicon power HBT.The invention still further relates to the manufacture method of described germanium silicon power HBT, and refer to device by the germanium silicon power HBT that germanium silicon power HBT forms more.
Background technology
Conventional germanium silicium HBT requirement on devices has high as far as possible cut-off frequency under certain puncture voltage, the major effect cut-off frequency be the transit time of base and base-depletion region that collector region knot forms.Cut-off frequency and transit time are inversely proportional to, and the transit time is proportional to the width of base and knot depletion region.The knot width of depletion region is directly proportional to the puncture voltage of emitter to collector electrode again.So, in order to obtain higher cut-off frequency under identical puncture voltage, need base width more narrow better.Simultaneously, emitter region-base knot also needs more shallow, to meet the high frequency requirement.
The requirement of power device is different, and it need to have sufficiently high power output and power gain.Power output is directly proportional to the gross area of emitter, usually adopts to refer to structure more for this reason.And power gain also is inversely proportional to base resistance and base-collector region electric capacity except to cut-off frequency is directly proportional.So reduce as far as possible and whole refer to that structure base resistance and base-collector region electric capacity are the keys that obtains high-gain and realize commercial Application more.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of germanium silicon power HBT and germanium silicon power HBT refers to device more, can reduce base stage-collector electrode dielectric capacitance, base stage and/or the collector resistance of the large power output device of optimization obtain peak power output and power gain; For this reason, the present invention also provides a kind of manufacture method of described germanium silicon power HBT.
For solving the problems of the technologies described above, germanium silicon power HBT of the present invention is formed on P type silicon substrate, and active area is by the isolation of field oxygen, and described triode comprises:
One collector region is by being formed at n type buried layer on P type silicon substrate, being formed on n type buried layer and being added that by a N-type extension of oxygen isolation the first N-type ion implanted region and the second N-type ion implanted region form; Described the first N-type ion implanted region is positioned at the outer Yanzhong of N-type on n type buried layer and is connected to form low-resistance channel with described n type buried layer, Yanzhong outside the N-type of described the second N-type ion implanted region between the isolation of field oxygen; The doping content of described n type buried layer is greater than the doping content of described N-type extension;
One base is comprised of the germanium and silicon epitaxial layer that is formed on the N-type extension, and it comprises an intrinsic base region and an outer base area, and described intrinsic base region forms with collector region and contacts, and described outer base area is formed at described oxygen top and is used to form base electrode; Described germanium and silicon epitaxial layer comprises silicon buffer layer, germanium silicon layer and silicon cap layer, and described germanium silicon layer and silicon cap layer are respectively doped with boron, and the doping content of germanium silicon layer is greater than the doping content of silicon cap layer;
One emitter region is comprised of the polysilicon that is formed at intrinsic base region top, and forms with intrinsic base region and contact, carries out formation EB junction after the annealing of N-type Implantation in described emitter-polysilicon;
Place, 0.5～5 micron of periphery apart from n type buried layer is formed with P type Implantation isolated area, and described P type Implantation isolated area is positioned at the below of an oxygen and is connected with P type silicon substrate with field oxygen; The N-type that is positioned at the oxygen bottom, field under base stage is formed with a P type ion implanted region in the Yanzhong outward.
The present invention also provides the manufacture method of germanium silicon power HBT, comprises the steps:
Step 1, carrying out dosage on P type silicon substrate is 10 15cm -2～10 16cm -2, energy is the N-type Implantation of 50keV～100keV, then carries out high annealing, temperature is between 1050 ℃～1150 ℃, annealing time forms n type buried layer more than 60 minutes;
Step 2, growth thickness is that 0.8 μ m～2 μ m, doping content are 10 on n type buried layer 15cm -3～10 16cm -3Low-doped N-type extension;
Step 3, implantation dosage is 10 on n type buried layer 15cm -2～10 16cm -2, energy is the N-type ion of 50keV～100keV, forms the first N-type ion implanted region;
Step 4 forms P type Implantation isolated area in device periphery apart from the position that 0.5～5 micron of n type buried layer is used to form an oxygen, outer base area be used to form oxygen place below outside N-type the Yanzhong be formed with a P type ion implanted region;
Step 5 is carried out thermal oxidation and is formed an oxygen isolation, and oxidated layer thickness is at 5000～15000 dusts;
Step 6, outside the N-type between oxygen isolation on the scene, the N-type Implantation is selected in the Yanzhong, forms the second N-type ion implanted region of low resistance base;
Step 7, silicon oxide deposition and polysilicon are opened the zone that needs long monocrystalline, and with epitaxy growth germanium and silicon epitaxial layer, this germanium and silicon epitaxial layer is divided into silicon buffer layer, germanium silicon layer and silicon cap layer, and wherein germanium silicon layer and silicon cap layer are respectively doped with boron; The thickness of described silicon buffer layer is 100～300 dusts; The thickness of described germanium silicon layer is 400～800 dusts, 100～300 dust doped with boron wherein, and doping content is 2 * 10 19cm -3～6 * 10 19cm -3The thickness of described silicon cap layer is 300～500 dusts, and wherein doping content is 10 15cm -3～10 17cm -3
Step 8, deposition dielectric film on the germanium and silicon epitaxial layer, etching forms emitter window; Described deielectric-coating is silica, or silicon nitride, and perhaps silica adds silicon nitride, and perhaps silicon oxynitride adds silicon nitride;
Step 9, short annealing forms the silicon oxide layer of 5～10 dusts under aerobic environment, deposit doped polycrystalline silicon in place then, and successively Implantation phosphorus and arsenic, form polysilicon emitter by chemical wet etching, and carry out the outer base area P type Implantation of self-alignment emitter polysilicon;
Step 10, the propelling of annealing, temperature is 900～1100 ℃, the time is 10～100 seconds, enters intrinsic base region after the phosphorus in emitter-polysilicon and arsenic are pushed through silicon cap layer, forms the degree of depth at the EB junction of 300～500 dusts;
Step 11, the depositing silicide alloy-layer adopts contact hole technique to be connected emitter, base stage and collector electrode with metal connecting line technique and connects.
The invention provides a kind of many fingers device of germanium silicon power HBT, it is described that how the finger device is comprised of a plurality of Ge-Si heterojunction bipolar transistor single tubes, comprise two collector electrodes, described collector electrode lays respectively at the outermost that refers to device more, two collector electrode inboards comprise at least two emitters, and respectively there is a base stage both sides of each emitter;
Describedly refer to that the single tube structure of device comprises more:
One collector region is by being formed at n type buried layer on P type silicon substrate, being formed on n type buried layer and being added that by a N-type extension of oxygen isolation the first N-type ion implanted region and the second N-type ion implanted region form; Described the first N-type ion implanted region is positioned at the outer Yanzhong of N-type on n type buried layer and is connected to form low-resistance channel with described n type buried layer, and described the second N-type ion implanted region is positioned at the outer Yanzhong of N-type under emitter-window and is connected with n type buried layer; The doping content of described n type buried layer is greater than the doping content of described N-type extension;
One base is comprised of the germanium and silicon epitaxial layer that is formed on the N-type extension, and it comprises an intrinsic base region and an outer base area, and described intrinsic base region forms with collector region and contacts, and described outer base area is formed at described oxygen top and is used to form base electrode; Described germanium and silicon epitaxial layer comprises silicon buffer layer, germanium silicon layer and silicon cap layer, and described germanium silicon layer and silicon cap layer are respectively doped with boron, and the doping content of germanium silicon layer is greater than the doping content of silicon cap layer;
One emitter region is comprised of the polysilicon that is formed at intrinsic base region top, and forms with intrinsic base region and contact, carries out formation EB junction after the annealing of N-type Implantation in described emitter-polysilicon;
The described N-type outer Yanzhong that refers to the oxygen bottom, field under the device base stage is formed with a P type ion implanted region more, and described P type ion implanted region, the first N-type ion implanted region and the N-type ion implanted region of being connected connect by continuous n type buried layer; Place, 0.5～5 micron of periphery apart from n type buried layer is formed with P type Implantation isolated area, and described P type Implantation isolated area is positioned at the below of an oxygen and is connected with P type silicon substrate with field oxygen; Described P type ion implanted region and P type Implantation isolated area are isolated mutually.
The invention provides many fingers device of another kind of germanium silicon power HBT, it is described that how the finger device is comprised of a plurality of Ge-Si heterojunction bipolar transistor single tubes, comprise at least two collector electrodes, comprise a base stage and two emitters between two adjacent collector electrodes, described base stage is positioned at the centre of emitter, and the outermost that refers to device is collector electrode more;
Describedly refer to that the single tube structure of device comprises more:
One collector region is by being formed at n type buried layer on P type silicon substrate, being formed on n type buried layer and being added that by a N-type extension of oxygen isolation the first N-type ion implanted region and the second N-type ion implanted region form; Described the first N-type ion implanted region is positioned at the outer Yanzhong of N-type on n type buried layer and is connected to form low-resistance channel with described n type buried layer, and described the second N-type ion implanted region is positioned at the outer Yanzhong of N-type under emitter-window and is connected with n type buried layer; The doping content of described n type buried layer is greater than the doping content of described N-type extension;
One base is comprised of the germanium and silicon epitaxial layer that is formed on the N-type extension, and it comprises an intrinsic base region and an outer base area, and described intrinsic base region forms with collector region and contacts, and described outer base area is formed at described oxygen top and is used to form base electrode; Described germanium and silicon epitaxial layer comprises silicon buffer layer, germanium silicon layer and silicon cap layer, and described germanium silicon layer and silicon cap layer are respectively doped with boron, and the doping content of germanium silicon layer is greater than the doping content of silicon cap layer;
One emitter region is comprised of the polysilicon that is formed at intrinsic base region top, and forms with intrinsic base region and contact, carries out formation EB junction after the annealing of N-type Implantation in described emitter-polysilicon;
The described N-type outer Yanzhong that refers to the oxygen bottom, field under the device base stage is formed with a P type ion implanted region more, and described P type ion implanted region, the first N-type ion implanted region and the N-type ion implanted region of being connected connect by continuous n type buried layer; Place, 0.5～5 micron of periphery apart from n type buried layer is formed with P type Implantation isolated area, and described P type Implantation isolated area is positioned at the below of an oxygen and is connected with P type silicon substrate with field oxygen; Described P type ion implanted region and P type Implantation isolated area are isolated mutually.
The invention provides many fingers device of another germanium silicon power HBT, it is described that how the finger device is comprised of a plurality of Ge-Si heterojunction bipolar transistor single tubes, comprise at least two collector electrodes, comprise a base stage and two emitters between two adjacent collector electrodes, described base stage is positioned at the centre of emitter, and the outermost that refers to device is collector electrode more;
Describedly refer to that the single tube structure of device comprises more:
One collector region is by being formed at n type buried layer on P type silicon substrate, being formed on n type buried layer and being added that by a N-type extension of oxygen isolation the first N-type ion implanted region and the second N-type ion implanted region form; Described the first N-type ion implanted region is positioned at the outer Yanzhong of N-type on n type buried layer and is connected to form low-resistance channel with described n type buried layer, and described the second N-type ion implanted region is positioned at the outer Yanzhong of N-type under emitter-window and is connected with n type buried layer; The doping content of described n type buried layer is greater than the doping content of described N-type extension;
One base is comprised of the germanium and silicon epitaxial layer that is formed on the N-type extension, and it comprises an intrinsic base region and an outer base area, and described intrinsic base region forms with collector region and contacts, and described outer base area is formed at described oxygen top and is used to form base electrode; Described germanium and silicon epitaxial layer comprises silicon buffer layer, germanium silicon layer and silicon cap layer, and described germanium silicon layer and silicon cap layer are respectively doped with boron, and the doping content of germanium silicon layer is greater than the doping content of silicon cap layer;
One emitter region is comprised of the polysilicon that is formed at intrinsic base region top, and forms with intrinsic base region and contact, carries out formation EB junction after the annealing of N-type Implantation in described emitter-polysilicon;
The described N-type outer Yanzhong that refers to the oxygen bottom, field under the device base stage is formed with the P type ion implanted region that is connected with P type silicon substrate more; Place, 0.5～5 micron of periphery apart from n type buried layer is formed with P type Implantation isolated area, and described P type Implantation isolated area is positioned at the below of an oxygen and contacts with P type silicon substrate with field oxygen; The first N-type ion implanted region between the first N-type ion implanted region between P type ion implanted region and the second N-type ion implanted region, P type ion implanted region and P type Implantation isolated area be connected the N-type ion implanted region and connect by discrete n type buried layer respectively; Described P type ion implanted region and P type Implantation isolated area are not communicated with.
Beneficial effect of the present invention is:
1, the present invention has comprehensively adopted low-resistance n type buried layer passage, low-doped N-type epitaxial growth monocrystalline silicon, the low resistance base of selective N type Implantation formation and the SiGe base of highly doped boron, greatly reduce base stage and the collector resistance of device, and base-collector junction electric capacity;
2, the present invention passes through Implantation, N-type epitaxial loayer formation P type ion implanted region in base stage end oxygen bottom, and the P type Implantation isolated area of P type ion implanted region and device outside is not communicated with, can greatly reduce by base stage that the outer base area polysilicon-field oxygen-N-type extension forms-collector electrode dielectric capacitance;
But 3, base stage and/or the collector resistance that refers to the large power output device of structure optimization of the present invention more, and base-collector junction electric capacity, obtain peak power output and power gain, thereby the direct current of optimization device and radio-frequency performance are as the power amplifying device in high speed, high-output power, high gain circuit.
Description of drawings
The present invention is further detailed explanation below in conjunction with accompanying drawing and embodiment:
Fig. 1-Fig. 4 is that the germanium silicon power HBT single tube of the embodiment of the present invention is at the device schematic cross-section of manufacture process;
Fig. 5 is the structural representation that the first germanium silicon power HBT of the embodiment of the present invention refers to device more;
Fig. 6 is the structural representation that the second germanium silicon power HBT of the embodiment of the present invention refers to device more;
Fig. 7 is the structural representation that the third germanium silicon power HBT of the embodiment of the present invention refers to device more.
Embodiment
The manufacture method of germanium silicon power HBT of the present invention comprises the steps:
Step 1 is carried out high dose (10 on P type silicon substrate 1 15cm -2～10 16cm -2), middle energy (the N-type Implantation of 50KeV～100KeV), carry out high annealing after injection, temperature is between 1050 ℃～1150 ℃, annealing time is more than 60 minutes, form low-resistance n type buried layer 2 passages, ion is arsenic preferably, and it enough weighs and can prevent further diffusion in follow-up annealing process, can not damage significantly silica-based generation again;
Step 2 is hanged down the epitaxial growth of N-doping on n type buried layer, thickness is between 0.8 μ m～2.0 μ m, and doping content is 10 15cm -3～10 16cm -3
Step 3 is carried out high dose (10 on n type buried layer 15cm -2～10 16cm -2), middle energy (Implantation of 50keV～100keV), ion is phosphorus preferably, forms the first N-type ion implanted region 5 that connects n type buried layer 2;
Step 4 is carried out middle low dosage (10 outside 0.5 μ m～5 μ m around device 14cm -2～5 * 10 15cm -2), (the P type Implantation of 150keV～500keV) forms 7 pairs of devices of P type Implantation isolated area and ties isolation high-energy; Outer base area be used to form oxygen place below be formed with a P type ion implanted region 11 in N-type extension 3;
Step 5 is carried out thermal oxidation and is formed an oxygen 4 isolation, and oxidated layer thickness is at 5000～15000 dusts, as shown in Figure 1;
Step 6 is selected the N-type Implantation under the emitter-window between oxygen 4 isolation on the scene, forms the second N-type ion implanted region 6 of low resistance base;
Step 7, silicon oxide deposition and polysilicon are young brilliant, with doing the zone that quarter and wet etching are opened needs long monocrystalline, then with epitaxy growth germanium and silicon epitaxial layer 8; Germanium and silicon epitaxial layer 8 can be subdivided into three layers, is respectively silicon buffer layer, the germanium silicon layer, and silicon cap layer, wherein the germanium silicon layer has highly doped boron and silicon cap layer has low-doped boron; Wherein, silicon buffer layer is 100～300 dusts, and the germanium silicon layer is 400～800 dusts, wherein 100～300 dust boron-dopings, and doping content is 2 * 10 19cm -3～6 * 10 19cm -3, silicon cap layer is 300～500 dusts, boron doping concentration is 10 15cm -3～10 17cm -3, high boron doping concentration district must be appropriate with the silicon cap layer position, guarantees that thermal annealing forms suitable EB junction, as shown in Figure 2;
Step 8, deposition dielectric film on germanium and silicon epitaxial layer 8, etching forms emitter window; Described deielectric-coating is silica, or silicon nitride, and perhaps silica adds silicon nitride, and perhaps silicon oxynitride adds silicon nitride;
Step 9, short annealing forms the silicon oxide layer (not shown in Fig. 3) of 5～10 dusts under aerobic environment, then deposit doped polycrystalline silicon in place, and priority Implantation phosphorus and arsenic, form polysilicon emitter 9 and side wall by chemical wet etching, and the outer base area P type Implantation 10 that carries out the self-alignment emitter polysilicon is to reduce base resistance, as shown in Figure 3;
Step 10, the propelling of annealing, temperature is 900～1100 ℃, the time is 10～100 seconds, enters intrinsic base region after the phosphorus in emitter-polysilicon and arsenic are pushed through silicon cap layer, forms the degree of depth at the EB junction of 300～500 dusts;
Step 11, the depositing silicide alloy-layer adopts contact hole technique to be connected emitter, base stage and collector electrode with metal connecting line technique and connects.
Germanium silicon power HBT single tube by said method is made as shown in Figure 4, is formed on P type silicon substrate 1, and active area is by 4 isolation of field oxygen, and described triode comprises:
One collector region is by being formed at n type buried layer 2 on P type silicon substrate 1, being formed on n type buried layer 2 and being added that by the N-type extension 3 of an oxygen 4 isolation the first N-type ion implanted region 5 and the second N-type ion implanted region 6 form; Described the first N-type ion implanted region 5 be arranged on n type buried layer 2 described N-type extension 3 and and n type buried layer be connected to form low-resistance channel, in the N-type extension 3 of described the second N-type ion implanted region 6 between field oxygen 4;
One base is comprised of the germanium and silicon epitaxial layer 8 that is formed on N-type extension 3, and it comprises an intrinsic base region and an outer base area, and described intrinsic base region forms with collector region and contacts, and described outer base area is formed at described oxygen 4 tops and is used to form base electrode;
One emitter region is comprised of the polysilicon that is formed at intrinsic base region top, and forms with intrinsic base region and contact, carries out formation EB junction after the annealing of N-type Implantation in described emitter-polysilicon 9;
Place, 0.5～5 micron of periphery apart from n type buried layer 2 is formed with P type Implantation isolated area 7, and described P type Implantation isolated area 7 is positioned at the below of an oxygen 4 and is connected with P type silicon substrate with field oxygen 4 and is connected; The N-type extension 3 that is arranged in oxygen 4 bottoms, field under base stage is formed with a P type ion implanted region 11.
Many fingers device of the first germanium silicon power HBT of the present invention, Fig. 5 provides two finger structures of two emitters, comprises two collector electrodes, and described collector electrode lays respectively at the outermost that refers to device more, two collector electrode inboards comprise two emitters, and respectively there is a base stage both sides of each emitter.Many fingers device of this germanium silicon power HBT can be expressed as CBEBE with emitter E, base stage B, the collector electrode C of Ge-Si heterojunction bipolar transistor ... BEBC, Fig. 5 are the minimum structures that refers to that adopts this form more.The described single tube structure that refers to device does not repeat them here as previously shown.
Many fingers device of second and third kind germanium silicon power HBT of the present invention, Fig. 6 and Fig. 7 provide four finger structures of four emitters, comprise three collector electrodes and two base stages, comprise a base stage and two emitters between two adjacent collector electrodes, described base stage is positioned at the centre of emitter, and the outermost that refers to device is collector electrode more.Many fingers device of this germanium silicon power HBT can be expressed as CEBE with emitter E, base stage B, the collector electrode C of Ge-Si heterojunction bipolar transistor ... CEBEC, adopting the minimal structure of this form is two finger structure C EBEC.The described single tube structure that refers to device does not repeat them here as previously shown.
In the aforementioned device of finger more than three kinds, refer to that oxygen 4 bottoms, field under the device base stage are formed with a P type ion implanted region 11 more, place, 0.5～5 micron of periphery apart from n type buried layer 2 is formed with P type Implantation isolated area 7, and described P type Implantation isolated area 7 is positioned at the below of an oxygen 4 and is connected with P type silicon substrate with field oxygen 4 and is connected; Described P type ion implanted region 11 and P type Implantation isolated area 7 are not communicated with, and can greatly be reduced by base stage that P type polysilicon base-field oxygen-N-type extension forms-collector electrode dielectric capacitance like this.
In the front device of finger more than two kinds, described P type ion implanted region 11, the first N-type ion implanted region 5 and the N-type ion implanted region 6 of being connected connect by continuous n type buried layer 2.The third refers to that device and the second refer to that the difference of device is more more, the third refers to that the n type buried layer 2 in device be discrete more, the first N-type ion implanted region 5 between the first N-type ion implanted region 5 between P type ion implanted region 11 and the second N-type ion implanted region 6, P type ion implanted region 11 and P type Implantation isolated area 7 be connected N-type ion implanted region 6 respectively by discrete n type buried layer 2 connections.
The present invention has comprehensively adopted low-resistance n type buried layer passage, low-doped N-type epitaxial growth monocrystalline silicon, the low resistance base of selective N type Implantation formation and the SiGe base of highly doped boron, greatly reduce base stage and the collector resistance of device, and base-collector junction electric capacity; The present invention passes through Implantation, N-type epitaxial loayer formation P type ion implanted region in base stage end oxygen bottom, and the P type Implantation isolated area of P type ion implanted region and device outside is not communicated with, can greatly reduce by base stage that the outer base area polysilicon-field oxygen-N-type extension forms-collector electrode dielectric capacitance; But base stage and/or the collector resistance that refers to the large power output device of structure optimization of the present invention more, and base-collector junction electric capacity, obtain peak power output and power gain, thereby the direct current of optimization device and radio-frequency performance are as the power amplifying device in high speed, high-output power, high gain circuit.
Abovely by specific embodiment, the present invention is had been described in detail, but these are not to be construed as limiting the invention.In the situation that do not break away from the principle of the invention, those skilled in the art can make many distortion and improvement, and these also should be considered as protection scope of the present invention.

Claims (10)

1. a germanium silicon power HBT, be formed on P type silicon substrate, and active area is isolated by field oxygen, it is characterized in that, described triode comprises:
One collector region is by being formed at n type buried layer on P type silicon substrate, being formed on n type buried layer and being added that by a N-type extension of oxygen isolation the first N-type ion implanted region and the second N-type ion implanted region form; Described the first N-type ion implanted region is on n type buried layer and be in the outer Yanzhong of N-type between the isolation of oxygen, is used for n type buried layer is drawn out to silicon face, and described the second N-type ion implanted region is positioned at the N-type Yanzhong and being connected with n type buried layer outward under emitter-window; The doping content of described n type buried layer is greater than the doping content of described N-type extension;
One base is comprised of the germanium and silicon epitaxial layer that is formed on the N-type extension, and it comprises an intrinsic base region and an outer base area, and described intrinsic base region forms with collector region and contacts, and described outer base area is formed at described oxygen top and is used to form base electrode; Described germanium and silicon epitaxial layer comprises silicon buffer layer, germanium silicon layer and silicon cap layer, and described germanium silicon layer and silicon cap layer are respectively doped with boron, and the doping content of germanium silicon layer is greater than the doping content of silicon cap layer;
One emitter region is comprised of the polysilicon that is formed at intrinsic base region top, and forms with intrinsic base region and contact, carries out formation EB junction after the annealing of N-type Implantation in described emitter-polysilicon;
Place, 0.5～5 micron of periphery apart from n type buried layer is formed with P type Implantation isolated area, and described P type Implantation isolated area is positioned at the below of an oxygen and is connected with P type silicon substrate with field oxygen; The N-type that is positioned at the oxygen bottom, field under base stage is formed with a P type ion implanted region in the Yanzhong outward.
2. germanium silicon power HBT according to claim 1, is characterized in that, the ion of described n type buried layer is arsenic, and implantation dosage is 10 15cm -2～10 16cm -2, Implantation Energy is 50keV～100keV.
3. germanium silicon power HBT according to claim 1, is characterized in that, the doping content of described N-type extension is 10 15cm -3～10 16cm -3, thickness is 0.8 μ m～2 μ m.
4. germanium silicon power HBT according to claim 1, is characterized in that, the ion of described the first N-type ion implanted region is phosphorus, and implantation dosage is 10 15cm -2～10 16cm -2, Implantation Energy is 50keV～100keV.
5. germanium silicon power HBT according to claim 1, is characterized in that, the oxidated layer thickness of described oxygen is 5000～15000 dusts.
6. germanium silicon power HBT according to claim 1, is characterized in that, the thickness of described silicon buffer layer is 100～300 dusts; The thickness of described germanium silicon layer is 400～800 dusts, 100～300 dust doped with boron wherein, and doping content is 2 * 10 19cm -3～6 * 10 19cm -3The thickness of described silicon cap layer is 300～500 dusts, and wherein doping content is 10 15cm -3～10 17cm -3
7. the manufacture method of a germanium silicon power HBT, is characterized in that, comprises the steps:
Step 1, carrying out dosage on P type silicon substrate is 10 15cm -2～10 16cm -2, energy is the N-type Implantation of 50keV～100keV, then carries out high annealing, temperature is between 1050 ℃～1150 ℃, annealing time forms n type buried layer more than 60 minutes;
Step 2, growth thickness is that 0.8 μ m～2 μ m, doping content are 10 on n type buried layer 15cm -3～10 16cm -3Low-doped N-type extension;
Step 3, in the N-type epitaxial loayer on n type buried layer, implantation dosage is 10 15cm -2～10 16cm -2, energy is the N-type ion of 50keV～100keV, forms the first N-type ion implanted region;
Step 4 forms P type Implantation isolated area in device periphery apart from the position that 0.5～5 micron of n type buried layer is used to form an oxygen, outer base area be used to form oxygen place below outside N-type the Yanzhong be formed with a P type ion implanted region;
Step 5 is carried out thermal oxidation and is formed an oxygen isolation, and oxidated layer thickness is at 5000～15000 dusts;
Step 6, outside the N-type between oxygen isolation on the scene, the N-type Implantation is selected in the Yanzhong, forms the second N-type ion implanted region of low resistance base;
Step 7, silicon oxide deposition and polysilicon are opened the zone that needs long monocrystalline, and with epitaxy growth germanium and silicon epitaxial layer, this germanium and silicon epitaxial layer is divided into silicon buffer layer, germanium silicon layer and silicon cap layer, and wherein germanium silicon layer and silicon cap layer are respectively doped with boron; The thickness of described silicon buffer layer is 100～300 dusts; The thickness of described germanium silicon layer is 400～800 dusts, 100～300 dust doped with boron wherein, and doping content is 2 * 10 19cm -3～6 * 10 19cm -3The thickness of described silicon cap layer is 300～500 dusts, and wherein doping content is 10 15cm -3～10 17cm -3:
Step 8, deposition dielectric film on the germanium and silicon epitaxial layer, etching forms emitter window; Described deielectric-coating is silica, or silicon nitride, and perhaps silica adds silicon nitride, and perhaps silicon oxynitride adds silicon nitride;
Step 9, short annealing forms the silicon oxide layer of 5～10 dusts under aerobic environment, deposit doped polycrystalline silicon in place then, and successively Implantation phosphorus and arsenic, form polysilicon emitter by chemical wet etching, and carry out the outer base area P type Implantation of self-alignment emitter polysilicon;
Step 10, the propelling of annealing, temperature is 900～1100 ℃, the time is 10～100 seconds, enters intrinsic base region after the phosphorus in emitter-polysilicon and arsenic are pushed through silicon cap layer, forms the degree of depth at the EB junction of 300～500 dusts;
Step 11, the depositing silicide alloy-layer adopts contact hole technique to be connected emitter, base stage and collector electrode with metal connecting line technique and connects.
8. many fingers device of a germanium silicon power HBT, be comprised of a plurality of Ge-Si heterojunction bipolar transistor single tubes, it is characterized in that,
Describedly refer to that device comprises two collector electrodes, described collector electrode lays respectively at the outermost of many finger devices more, and two collector electrode inboards comprise at least two emitters, and respectively there is a base stage both sides of each emitter;
Describedly refer to that the single tube structure of device comprises more:
One collector region is by being formed at n type buried layer on P type silicon substrate, being formed on n type buried layer and being added that by a N-type extension of oxygen isolation the first N-type ion implanted region and the second N-type ion implanted region form; Described the first N-type ion implanted region is positioned at the outer Yanzhong of N-type on n type buried layer and is connected to form low-resistance channel with described n type buried layer, and described the second N-type ion implanted region is positioned at the outer Yanzhong of N-type under emitter-window and is connected with n type buried layer; The doping content of described n type buried layer is greater than the doping content of described N-type extension;
One base is comprised of the germanium and silicon epitaxial layer that is formed on the N-type extension, and it comprises an intrinsic base region and an outer base area, and described intrinsic base region forms with collector region and contacts, and described outer base area is formed at described oxygen top and is used to form base electrode; Described germanium and silicon epitaxial layer comprises silicon buffer layer, germanium silicon layer and silicon cap layer, and described germanium silicon layer and silicon cap layer are respectively doped with boron, and the doping content of germanium silicon layer is greater than the doping content of silicon cap layer;
One emitter region is comprised of the polysilicon that is formed at intrinsic base region top, and forms with intrinsic base region and contact, carries out formation EB junction after the annealing of N-type Implantation in described emitter-polysilicon;
The described N-type outer Yanzhong that refers to the oxygen bottom, field under the device base stage is formed with a P type ion implanted region more, and described P type ion implanted region, the first N-type ion implanted region and the N-type ion implanted region of being connected connect by continuous n type buried layer; Place, 0.5～5 micron of periphery apart from n type buried layer is formed with P type Implantation isolated area, and described P type Implantation isolated area is positioned at the below of an oxygen and is connected with P type silicon substrate with field oxygen; Described P type ion implanted region and P type Implantation isolated area are isolated mutually.
9. many fingers device of a germanium silicon power HBT, be comprised of a plurality of Ge-Si heterojunction bipolar transistor single tubes, it is characterized in that:
Described how the finger device comprises at least two collector electrodes, comprises a base stage and two emitters between two adjacent collector electrodes, and described base stage is positioned at the centre of emitter, and the outermost that refers to device is collector electrode more;
Describedly refer to that the single tube structure of device comprises more:
One collector region is by being formed at n type buried layer on P type silicon substrate, being formed on n type buried layer and being added that by a N-type extension of oxygen isolation the first N-type ion implanted region and the second N-type ion implanted region form; Described the first N-type ion implanted region is positioned at the outer Yanzhong of N-type on n type buried layer and is connected to form low-resistance channel with described n type buried layer, and described the second N-type ion implanted region is positioned at the outer Yanzhong of N-type under emitter-window and is connected with n type buried layer; The doping content of described n type buried layer is greater than the doping content of described N-type extension;
One base is comprised of the germanium and silicon epitaxial layer that is formed on the N-type extension, and it comprises an intrinsic base region and an outer base area, and described intrinsic base region forms with collector region and contacts, and described outer base area is formed at described oxygen top and is used to form base electrode; Described germanium and silicon epitaxial layer comprises silicon buffer layer, germanium silicon layer and silicon cap layer, and described germanium silicon layer and silicon cap layer are respectively doped with boron, and the doping content of germanium silicon layer is greater than the doping content of silicon cap layer;
One emitter region is comprised of the polysilicon that is formed at intrinsic base region top, and forms with intrinsic base region and contact, carries out formation EB junction after the annealing of N-type Implantation in described emitter-polysilicon;
The described N-type outer Yanzhong that refers to the oxygen bottom, field under the device base stage is formed with a P type ion implanted region more, and described P type ion implanted region, the first N-type ion implanted region and the N-type ion implanted region of being connected connect by continuous n type buried layer; Place, 0.5～5 micron of periphery apart from n type buried layer is formed with P type Implantation isolated area, and described P type Implantation isolated area is positioned at the below of an oxygen and is connected with P type silicon substrate with field oxygen; Described P type ion implanted region and P type Implantation isolated area are isolated mutually.
10. many fingers device of a germanium silicon power HBT, be comprised of a plurality of Ge-Si heterojunction bipolar transistor single tubes, it is characterized in that:
Described how the finger device comprises at least two collector electrodes, comprises a base stage and two emitters between two adjacent collector electrodes, and described base stage is positioned at the centre of emitter, and the outermost that refers to device is collector electrode more;
Describedly refer to that the single tube structure of device comprises more:
One collector region is by being formed at n type buried layer on P type silicon substrate, being formed on n type buried layer and being added that by a N-type extension of oxygen isolation the first N-type ion implanted region and the second N-type ion implanted region form; Described the first N-type ion implanted region is positioned at the outer Yanzhong of N-type on n type buried layer and is connected to form low-resistance channel with described n type buried layer, and described the second N-type ion implanted region is positioned at the outer Yanzhong of N-type under emitter-window and is connected with n type buried layer; The doping content of described n type buried layer is greater than the doping content of described N-type extension;
One base is comprised of the germanium and silicon epitaxial layer that is formed on the N-type extension, and it comprises an intrinsic base region and an outer base area, and described intrinsic base region forms with collector region and contacts, and described outer base area is formed at described oxygen top and is used to form base electrode; Described germanium and silicon epitaxial layer comprises silicon buffer layer, germanium silicon layer and silicon cap layer, and described germanium silicon layer and silicon cap layer are respectively doped with boron, and the doping content of germanium silicon layer is greater than the doping content of silicon cap layer;
One emitter region is comprised of the polysilicon that is formed at intrinsic base region top, and forms with intrinsic base region and contact, carries out formation EB junction after the annealing of N-type Implantation in described emitter-polysilicon;
The described N-type outer Yanzhong that refers to the oxygen bottom, field under the device base stage is formed with the P type ion implanted region that is connected with P type silicon substrate more; Place, 0.5～5 micron of periphery apart from n type buried layer is formed with P type Implantation isolated area, and described P type Implantation isolated area is positioned at the below of an oxygen and contacts with P type silicon substrate with field oxygen; The first N-type ion implanted region between the first N-type ion implanted region between P type ion implanted region and the second N-type ion implanted region, P type ion implanted region and P type Implantation isolated area be connected the N-type ion implanted region and connect by discrete n type buried layer respectively; Described P type ion implanted region and P type Implantation isolated area are not communicated with.
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