CN108198758B - Gallium nitride power diode device with vertical structure and manufacturing method thereof - Google Patents
Gallium nitride power diode device with vertical structure and manufacturing method thereof Download PDFInfo
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 16
- 238000000059 patterning Methods 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 230000008569 process Effects 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 238000000231 atomic layer deposition Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005293 physical law Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910000601 superalloy Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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Abstract
The invention provides a method for manufacturing a gallium nitride power diode device with a vertical structure, which comprises the following steps: step one, providing a substrate and an epitaxial layer on the substrate; step two, providing the surface of the epitaxial layer for patterning and etching the groove; depositing first anode metal on the surface of the epitaxial layer between the grooves; step four, covering a second anode metal in the groove and on the surface of the first layer of anode metal; and fifthly, manufacturing a cathode on the back of the device. The invention can improve the forward output current and the reverse blocking voltage of the device and improve the device performance of the gallium nitride power diode.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a gallium nitride power diode device with a vertical structure and a manufacturing method thereof.
Background
Modern technology continuously puts higher requirements on the aspects of volume, reliability, voltage resistance, power consumption and the like of semiconductor power devices. With the reduction of the feature size of the transistor, the mainstream silicon-based material and the CMOS technology are developing to a 10 nm process node due to the physical laws such as the short channel effect and the limitation of the manufacturing cost, and thus are difficult to be continuously promoted. Gallium nitride has the characteristics of wider forbidden band width, high thermal conductivity, strong atomic bond, good chemical stability, high working temperature, high breakdown voltage, strong irradiation resistance and the like, and is suitable for application of photoelectrons, high-temperature high-power devices, high-frequency microwave devices and the like. Therefore, gallium nitride is considered as a new generation of semiconductor material for integrated circuits, and has a wide application prospect.
The geometry of semiconductor power diodes includes two categories: a lateral configuration and a vertical configuration. The high-power gallium nitride-based diode with the sapphire as the growth substrate and the transverse structure has the advantages of large size, low cost, good CMOS process compatibility and the like, but is difficult to obtain high output current, low in heat dissipation efficiency, current congestion, low in current density and high in production cost, and cannot avoid the trouble of high-voltage current collapse and the like caused by a surface state.
In the prior art, in order to solve the heat dissipation problem of the high-power gallium nitride-based semiconductor diode with the transverse structure, a flip-chip bonding technology is proposed, but the flip-chip bonding technology is complex in process and high in production cost. In addition, the substrate cost of the traditional gallium nitride-based diode with the vertical structure is extremely high, the technical requirement on substrate stripping is extremely high, and the realization is difficult.
Therefore, it is urgently needed to design a novel gallium nitride-based power diode with a vertical structure and a manufacturing method thereof, so as to solve the problems of small output current, current collapse and the like of a high-power gallium nitride-based semiconductor diode with a transverse structure, and effectively apply the gallium nitride-based power diode to the field of high-voltage high-power electronic application.
Disclosure of Invention
The gallium nitride power diode device with the vertical structure and the manufacturing method thereof can effectively improve the output current of the gallium nitride-based semiconductor diode device, solve the problem of current collapse and improve the performance of the gallium nitride-based semiconductor diode device aiming at the defects of the prior art.
In a first aspect, the present invention provides a method for manufacturing a vertical-structure gan power diode device, including:
step one, providing a substrate and an epitaxial layer on the substrate;
step two, providing the surface of the epitaxial layer for patterning and etching a groove;
depositing first anode metal on the surface of the epitaxial layer between the grooves;
step four, covering a second anode metal in the groove and on the surface of the first layer of anode metal;
and fifthly, manufacturing a cathode on the back of the device.
Optionally, the substrate in the first step is heavily doped N+-a GaN substrate, said epitaxial layer being lightly doped N--a GaN epitaxial layer.
Optionally, in the second step, the groove is obtained by etching through a gate groove etching process.
Optionally, the third step further includes a step of patterning the first anode metal, so as to achieve surface contact with the epitaxial layer between the first anode metal and the groove.
Optionally, the first anode metal is an alloy or an unalloyed alloy.
Optionally, the first anode metal is a superalloy for making good contact with the surface of the epitaxial layer.
Optionally, the fourth step further includes a step of patterning the second anode metal to cover the inside of the groove and the surface of the first anode metal.
In another aspect, the present invention provides a diode device fabricated according to the above method, including:
a substrate and an epitaxial layer on the substrate;
first anode metal deposited between the grooves etched on the surface of the epitaxial layer;
the second anode metal is filled in the groove etched on the surface of the epitaxial layer and covers the surface of the first anode metal;
a cathode on the back side of the device.
The gallium nitride power diode device with the vertical structure and the manufacturing method thereof provided by the embodiment of the invention can avoid the damage of semiconductor materials caused by high-temperature injection activation of the traditional gallium nitride power diode with the vertical structure, improve the forward output current and reverse blocking voltage of the device, reduce the process difficulty and improve the device performance of the gallium nitride power diode.
Drawings
Fig. 1 is a schematic diagram illustrating an overall structure of a vertical gan power diode device according to an embodiment of the present invention;
fig. 2A-2E are schematic diagrams illustrating a process for manufacturing a vertical gan power diode device according to an embodiment of the invention.
Fig. 3 is a process flow diagram of a method for manufacturing a vertical GaN power diode device according to an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In a first aspect, the present invention provides a vertical structure gallium nitride (GaN) power diode device structure. Fig. 1 shows a schematic diagram of the overall structure of a vertical structure gan power diode device according to an embodiment of the present invention. As shown, 100 is heavily doped N+GaN substrates, in particular, gallium nitride semiconductor materials, heavily doped with group V impurities, such as phosphorus, arsenic or antimony, to form N+The substrate, in particular, being heavily doped N, may be formed by thermal diffusion or ion implantation+-a GaN substrate; 101 is lightly doped N-GaN epitaxial layer/drift region, in particular, with small additions of group V impurities such as phosphorus, arsenic or antimony to form N in gallium nitride semiconductor material-GaN epitaxial layer/drift region, in particular, N can be formed by thermal diffusion or ion implantation--a GaN epitaxial layer/drift region; 102 is at N-The first layer of anode metal deposited on the GaN epitaxial layer/drift region 101, specifically, may be deposited by Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), electroplating, sputtering, Atomic Layer Deposition (ALD), and the like, in particular, the material of the first layer of anode metal may include but is not limited to Ti or Al, and preferably, the first layer of anode metal is patterned; 103 is filled in N-GaN epitaxial layer/drift region 101 in a recess etched by a gate trench etching technique and covering itA second layer of anode metal on the surface of the first layer of anode metal 102, specifically, the second layer of anode metal 103 can be implemented by Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), electroplating, sputtering, Atomic Layer Deposition (ALD), and the like, specifically, the material of the second layer of anode metal can include but is not limited to Ni or Au, preferably, the second layer of anode metal is patterned; 108 is the cathode of the diode device.
Fig. 2A-2E are schematic diagrams illustrating a process for fabricating a vertical gan power diode device according to an embodiment of the invention.
As shown in fig. 2A, heavily doped N is provided+GaN substrate 100 and lightly doped N-GaN epitaxial layer/drift region 101. Specifically, heavily doped N can be formed by adding a large amount or a small amount of V-group impurities such as phosphorus, arsenic or antimony into GaN semiconductor material+GaN substrate 100 or lightly doped N-GaN epitaxial layer/drift region 101. In particular, the heavily doped N may be formed by thermal diffusion or ion implantation+GaN substrate 100 or lightly doped N-GaN epitaxial layer/drift region 101.
As shown in FIG. 2B, in lightly doped N-Patterned grooves are etched in the GaN epitaxial layer/drift region 101 by a gate trench etching technique. In particular, the gate trench etch may include using a material such as SiO2And forming a barrier layer by using the oxide, and carrying out patterning on the surface of the barrier layer by spin-coating a photoresist, carrying out dry etching/wet etching and the like to obtain an etching window. And etching N in the patterned etching window by using a dry etching technology-GaN epitaxial layer/drift region 101 material, forming N--a corresponding recess of the GaN epitaxial layer/drift region surface followed by removal of the remaining barrier layer. A device with a recess as shown in fig. 2B is obtained.
N between the above-mentioned grooves, as shown in FIG. 2C--depositing a first layer of anode metal on the GaN epitaxial layer/drift region surface. Specifically, the first layer of anode metal 102 may be deposited by Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), electroplating, sputtering, Atomic Layer Deposition (ALD), and the like. In particular, the material of the first layer of anodic metal may include, but is not limited toWithout being limited to Ti or Al, the first sublayer anode metal 102 may be present in an alloyed or unalloyed manner and may be alloyed with N by a high temperature-Good contact is made to the GaN epitaxial layer/drift region surface. Preferably, the first layer of anode metal is patterned.
As shown in fig. 2D, the second layer of anode metal 103 is filled in N-The GaN epitaxial layer/drift region 101 is etched in a groove obtained by a gate trench etching technique and covers the surface of the first layer of anode metal 102. Specifically, the second layer of anode metal 103 may be implemented by Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), electroplating, sputtering, Atomic Layer Deposition (ALD), and the like, and particularly, the material of the second layer of anode metal may include, but is not limited to, Ni or Au. Preferably, the second layer of anode metal is patterned.
As shown in fig. 2E, 108 is the cathode of the diode device, and the diode cathode 108 is disposed on the back side of the diode device, i.e., on the heavily doped N+The back side of the GaN substrate 100.
In another aspect, the present invention provides a method for fabricating a vertical GaN power diode device. Fig. 3 is a process flow diagram illustrating a method for fabricating a vertical GaN power diode device according to an embodiment of the invention. As shown, S31 indicates providing heavily doped N+GaN substrate and lightly doped N--a GaN epitaxial layer/drift region; s32 denotes N being lightly doped--etching a patterned recess in the GaN epitaxial layer/drift region by a gate trench etching technique; s33 denotes N between the above-mentioned grooves--depositing a first layer of anode metal on the surface of the GaN epitaxial layer/drift region; s34, forming a second layer of anode metal in the groove and on the surface of the first layer of anode metal; s35 represents the fabrication of the diode device cathode on the back side of the device.
According to the gallium nitride power diode device with the vertical structure and the manufacturing method thereof provided by the embodiment of the invention, the pattern region can be formed in the gallium nitride drift region through the groove etching technology, and the two layers of anode metals are deposited on the surface, so that the damage of a semiconductor material caused by high-temperature injection activation of the traditional gallium nitride power diode with the vertical structure is avoided, the forward output current and the reverse blocking voltage of the device are improved, the process difficulty is reduced, the device performance of the gallium nitride power diode is improved, and the application of the gallium nitride power diode in high-current and high-power conversion is promoted.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (8)
1. A method for manufacturing a gallium nitride power diode device with a vertical structure is characterized by comprising the following steps:
step one, providing a substrate and an epitaxial layer on the substrate;
step two, providing the surface of the epitaxial layer for patterning and etching a groove;
depositing first anode metal on the surface of the epitaxial layer between the grooves, wherein the first anode metal is paved on the epitaxial layer between the grooves;
step four, covering a second anode metal in the groove and on the surface of the first layer of anode metal;
and fifthly, manufacturing a cathode on the back of the device.
2. The method for manufacturing a diode device according to claim 1, wherein the substrate in the first step is heavily doped N+-a GaN substrate, said epitaxial layer being lightly doped N--a GaN epitaxial layer.
3. The method for manufacturing a diode device according to claim 1, wherein in the second step, the groove is obtained by etching through a gate trench etching process.
4. The method for manufacturing a diode device according to claim 1, wherein the third step further comprises a step of patterning the first anode metal for surface contact with the epitaxial layer between the grooves.
5. The method of claim 1, wherein the first anode metal is an alloy or an unalloyed metal.
6. The method of claim 5, wherein the first anode metal is a high temperature alloy for good contact with the surface of the epitaxial layer.
7. The method of claim 1, wherein the fourth step further comprises a step of patterning the second anode metal to cover the inside of the recess and the surface of the first anode metal.
8. A diode device made according to the method of claim 1, comprising:
a substrate and an epitaxial layer on the substrate;
first anode metal deposited between grooves etched on the surface of the epitaxial layer, wherein the first anode metal is paved on the epitaxial layer between the grooves;
the second anode metal is filled in the groove etched on the surface of the epitaxial layer and covers the surface of the first anode metal;
a cathode on the back side of the device.
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101840938A (en) * | 2009-02-18 | 2010-09-22 | 万国半导体有限公司 | Gallium nitride heterojunction schottky diode |
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| JPS54107686A (en) * | 1978-02-13 | 1979-08-23 | Oki Electric Ind Co Ltd | Manufacture for semiconductor device |
| US6399996B1 (en) * | 1999-04-01 | 2002-06-04 | Apd Semiconductor, Inc. | Schottky diode having increased active surface area and method of fabrication |
| CN102369604B (en) * | 2011-02-22 | 2013-09-04 | 香港应用科技研究院有限公司 | Vertical light-emitting diode structure and manufacturing method thereof |
| CN104091835A (en) * | 2014-06-17 | 2014-10-08 | 中国科学院半导体研究所 | Gallium nitride heterojunction schottky barrier diode and manufacturing method thereof |
| CN106328514A (en) * | 2015-06-25 | 2017-01-11 | 北大方正集团有限公司 | Manufacturing method of power diode and power diode |
| CN105977308B (en) * | 2016-06-21 | 2023-06-02 | 华润微电子（重庆）有限公司 | Super barrier rectifier device and preparation method thereof |
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| CN101840938A (en) * | 2009-02-18 | 2010-09-22 | 万国半导体有限公司 | Gallium nitride heterojunction schottky diode |
Non-Patent Citations (2)
| Title |
|---|
| Enhanced Electrical Performance and Heat Dissipation in AlGaN/GaN Schottky Barrier Diodes Using Hybrid Tri-anode Structure;Jun Ma,et. al;《IEEE Transactions on Electron Devices》;20160727;第63卷;全文 * |
| Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier With Low Onset Voltage and Improved Breakdown Voltage;Jingnan Gao,et. al;《IEEE ELECTRON DEVICE LETTERS》;20170808;第38卷;全文 * |
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