CN107359199A - The SOI base LDMOS devices for having heat to electricity conversion of internet of things oriented - Google Patents
The SOI base LDMOS devices for having heat to electricity conversion of internet of things oriented Download PDFInfo
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- CN107359199A CN107359199A CN201710555933.0A CN201710555933A CN107359199A CN 107359199 A CN107359199 A CN 107359199A CN 201710555933 A CN201710555933 A CN 201710555933A CN 107359199 A CN107359199 A CN 107359199A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 28
- 230000005611 electricity Effects 0.000 title claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 42
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229920005591 polysilicon Polymers 0.000 claims abstract description 11
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 11
- 238000002161 passivation Methods 0.000 claims abstract description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 5
- 238000000605 extraction Methods 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 1
- 230000005678 Seebeck effect Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 238000010276 construction Methods 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- 239000002918 waste heat Substances 0.000 abstract description 3
- 239000006185 dispersion Substances 0.000 abstract description 2
- 230000001172 regenerating effect Effects 0.000 abstract description 2
- 238000011084 recovery Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- -1 boron ion Chemical class 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a kind of SOI base LDMOS devices for having heat to electricity conversion of internet of things oriented, including：In traditional SOI base LDMOS source region metal pole, grid polycrystalline silicon, drain region metal pole surrounding, layer of silicon dioxide passivation layer is made, to be electrically isolated, while as the reference plane for making thermocouple；In silicon dioxide layer, respectively around source electrode, grid and drain electrode 12 thermocouples being made up of thermo-electric metal arm and thermocouple N+ type polysilicon arms of arrangement, and it is sequentially connected in series by metal connecting line, forms three Thermocouple modules；One end of thermocouple is close to the electrode of place module, electrode of its other end away from place module.The present invention is simple in construction, it is easy to process, energy-conserving and environment-protective, the heat dispersion that device is effectively enhanced while waste heat energy regenerating recovery is realized by Seebeck effect, and the size of heat-dissipating power when SOI bases LDMOS works can be detected in real time by Seebeck pressure difference, there is good economical and practical value.
Description
Technical field
The present invention relates to a kind of SOI base LDMOS devices for having heat to electricity conversion of internet of things oriented, belong to mems
The technical field of system (MEMS).
Background technology
SOI technology, i.e., the silicon in dielectric substrate, the technology are to introduce one layer between top layer silicon and backing bottom to bury oxidation
Layer, can physically and electrically realize the isolation between device, can improve integrated level and reliability, it is considered to be break through silicon
Material and the new technology of integrated circuit limitation.The source electrode of SOI bases LDMOS (LDMOS) device, leakage
Pole and gate electrode are made in surface, are easy to integrate with interlock circuit by inside connection, so as to be developed rapidly.
Compared to common low pressure low current MOS device, SOI base LDMOS devices often work at high temperature, while with
The change of device junction temperature can vary widely the performance of LDMOS device, because the rise of junction temperature causes the power consumption of device to increase
Add, the power consumption of device causes junction temperature rise etc. again.Therefore, in order to improve the reliability of LDMOS device and service life, Wo Menxu
Reduce unnecessary thermal losses.
Nowadays, as the consciousness of development and the sustainable development of Internet of Things increasingly improves, thermoelectric energy, which is collected, to be had become
One much-talked-about topic.Thermoelectric power generation technology, can be by using heat to electricity conversion as a kind of energy conversion mode of solid-state completely
Material directly converts heat energy into electric energy, currently as study hotspot.
The present invention is to be based on SOI technology and MEMS surface micromachined technological designs one kind to apply in Internet of Things communication
In the LDMOS device with heat to electricity conversion function.On the one hand, device work produces Temperature Distribution, is carried for thermoelectric generation
Supplying heat source and the temperature difference；On the other hand, the Waste Heat Reuse of LDMOS device is realized that thermoelectric energy is changed by thermoelectric generation, and then
Alleviate heat dissipation problem.
The content of the invention
Goal of the invention：In order to overcome the deficiencies in the prior art, a kind of internet of things oriented of present invention offer has heat
The SOI base LDMOS devices of electricity conversion, are had the characteristics that simple in construction, easy to process, energy-conserving and environment-protective, are arranged using surrounding electric poles
Thermocouple, effectively alleviate the radiating of device while realizing thermoelectric energy conversion.
Technical scheme：To achieve the above object, the technical solution adopted by the present invention is：
A kind of SOI base LDMOS devices that have heat to electricity conversion of internet of things oriented, including SOI bases LDMOS and be arranged in
Some thermocouples on SOI bases LDMOS；
Wherein, the SOI bases LDMOS includes p-well region, the N- drift that horizontal double diffusion obtains in SOI substrate and SOI substrate
Area, and p-well region top layout has the N+ type source regions of heavy doping, and active area metal pole is set in N+ type source regions；The N- drift regions
Side of the top away from p-well region is disposed with the N+ types drain region of heavy doping, and drain region metal pole is provided with N+ types drain region；The N-
Side on drift region close to p-well region is provided with grid oxic horizon, and grid polycrystalline silicon is provided with grid oxic horizon；
Source region metal pole, grid polycrystalline silicon, drain region metal pole surrounding are provided with titanium dioxide on the SOI bases LDMOS
Silicon passivation layer, to be electrically isolated, and thermocouple is arranged in silicon dioxide passivation layer；Each thermocouple includes what is be set up in parallel
Thermo-electric metal arm and thermocouple N+ type polysilicon arms, lead between adjacent thermo-electric metal arm and thermocouple N+ type polysilicon arms
Metal connecting line is crossed to be sequentially connected in series.
Further, thermal source is provided for thermocouple by the Temperature Distribution on SOI bases LDMOS, heat is realized by thermocouple
SOI bases LDMOS radiating is realized while electric energy conversion, is effectively alleviated while realizing sustainable collection of energy
The radiating of LDMOS device.
Further, the thermocouple respectively around source region metal pole, grid polycrystalline silicon, drain region metal pole arrangement and successively
Series connection, three Thermocouple modules are formed, and one end of thermocouple, close to the electrode of place module, its other end is away from place module
Electrode, so as to realize the thermo-electric generation of stability and high efficiency.
Further, each Thermocouple module is provided with two thermocouple extraction poles, and three Thermocouple modules pass through gold
Category line is sequentially connected in series, and leaves output stage of two extraction poles as Seebeck pressure difference.Electromotive force is equal to each caused by so
Thermocouple module sum, the size of heat-dissipating power is detected further according to the electromotive force of measurement.
Further, each Thermocouple module includes 12 electrode arrangements for surrounding place module and the thermoelectricity being sequentially connected in series
It is even, heat to electricity conversion is realized according to Seebeck effect, series connection thermocouple is then advantageous to increasing exponentially for Seebeck pressure difference.
Further, the size of the temperature difference is detected by detecting Seebeck pressure difference caused by three Thermocouple modules, from
And the heat-dissipating power on SOI bases LDMOS is detected, it is easy to use and be easily achieved.
Beneficial effect：A kind of SOI base LDMOS devices for having heat to electricity conversion of internet of things oriented provided by the invention, relatively
In prior art, there is advantages below：1st, it is simple in construction, based on existing SOI technology and MEMS surface micromachineds, it is easy to
Realize, the heat dispersion of device is effectively enhanced while realizing that waste heat energy regenerating reclaims by Seebeck effect；2nd, can pass through
The size of heat-dissipating power, has good economical and practical value when Seebeck pressure difference detects SOI bases LDMOS work in real time.
Brief description of the drawings
Fig. 1 is the top view of the SOI base LDMOS devices for having heat to electricity conversion of internet of things oriented in the present invention；
Fig. 2 be in the present invention internet of things oriented have the SOI bases LDMOS device of heat to electricity conversion along P-P ' to profile；
Fig. 3 be in the present invention internet of things oriented have the SOI bases LDMOS device of heat to electricity conversion along Q-Q ' to profile；
Fig. 4 be in the present invention internet of things oriented have the SOI bases LDMOS device of heat to electricity conversion along R-R ' to profile；
Fig. 5 be in the present invention internet of things oriented have the SOI bases LDMOS device of heat to electricity conversion along S-S ' to profile；
Fig. 6 is the heat having in the SOI base LDMOS devices of heat to electricity conversion in Thermocouple module of internet of things oriented in the present invention
Galvanic couple distribution map；
Figure includes：1st, SOI substrate, 2, p-well region, 3, N- drift regions, 4, grid oxic horizon, 5, grid polycrystalline silicon, 6, N+
Type source region, 7, N+ types drain region, 8, thermo-electric metal arm, 9, thermocouple N+ type polysilicon arms, 10, metal connecting line, 11, silica
Passivation layer, 12, source region metal pole, 13, drain region metal pole, 14, Thermocouple module, 15, thermocouple extraction pole.
Embodiment
The present invention is further described below in conjunction with the accompanying drawings.
It is as shown in Figure 1, 2 a kind of SOI base LDMOS devices for having heat to electricity conversion of internet of things oriented, including SOI bases
LDMOS and 36 thermocouples being arranged on SOI bases LDMOS；
Wherein, the SOI bases LDMOS includes p-well region 2, the N- that horizontal double diffusion obtains in SOI substrate 1 and SOI substrate 1
Drift region 3, and the top layout of p-well region 2 has the N+ types source region 6 of heavy doping, and active area metal pole 12 is set in N+ types source region 6；Institute
State side of the top of N- drift regions 3 away from p-well region 2 and be disposed with the N+ types drain region 7 of heavy doping, and be provided with Lou on N+ types drain region 7
Area metal pole 13；Side on N- drift regions 3 close to p-well region 2 is provided with grid oxic horizon 4, and is provided with grid oxic horizon 4
Grid polycrystalline silicon 5；
As shown in Figure 3,4, around source region metal pole 12, grid polycrystalline silicon 5, drain region metal pole 13 on the SOI bases LDMOS
Surrounding is provided with silicon dioxide passivation layer 11, and to be electrically isolated, and thermocouple is arranged in silicon dioxide passivation layer 11；Each
Thermocouple includes the thermo-electric metal arm 8 and thermocouple N+ type polysilicons arm 9 that are set up in parallel, adjacent thermo-electric metal arm 8 and
It is sequentially connected in series between thermocouple N+ type polysilicons arm 9 by metal connecting line 10.
As shown in Figure 5,6, the thermocouple is respectively around source region metal pole 12, grid polycrystalline silicon 5, the row of drain region metal pole 13
Arrange and be sequentially connected in series, form three Thermocouple modules 14；The thermocouple is arranged perpendicular to the edge of the electrode of place module, is led to
The Temperature Distribution crossed on SOI bases LDMOS provides thermal source for thermocouple, is realized while realizing that thermoelectric energy is changed by thermocouple
SOI bases LDMOS radiating.
In the present embodiment, each Thermocouple module 14 includes the thermocouple and two thermocouple extraction poles 15 of 12 series connection,
And three Thermocouple modules 14 are sequentially connected in series by metal connecting line 10；By detecting plug shellfish caused by three Thermocouple modules 14
Gram pressure difference realizes the detection of heat-dissipating power on SOI bases LDMOS.
The preparation method of the SOI base LDMOS devices for having heat to electricity conversion of the internet of things oriented, comprises the following steps：
S1：Prepare SOI base P-type silicon substrates, doping concentration 1.0E15cm-3；
S2：Buffer oxide layer, thickness 20nm, 950 DEG C of oxidizing temperature, time 28min are prepared for p-well ion implanting；
S3：Carry out p-well boron ion injection, dosage 3.0E12cm-2, then gone using BOE (buffered oxide etch liquid)
Except buffer oxide layer, time 20s；
S4：Buffer oxide layer, thickness 20nm, N- layer phosphonium ion injection, then using BOE are prepared for N- layer ion implantings
Buffer oxide layer is removed, obtains N- drift regions；
S5：One layer of 20nm oxide layer is made for isolation thermal oxide (LOCOS silicon carrying out local oxide isolation), then using LPCVD
(low-pressure chemical vapour deposition technique) makes one layer of 100nm silicon nitride；
S6：Active area photoetching, with dry etching silicon nitride, time 1.5min, oxide layer is then removed using BOE, when
Between be 20s；
S7：LOCOS, thickness 400nm are prepared with dry/wet/xeothermic oxidizing process, temperature is 1000 DEG C, time 2 h, so
After use H3PO4100nm silicon nitrides are removed, 20nm oxide layers are removed with BOE；
S8：Grid oxic horizon, thickness 20nm are prepared, temperature is 950 DEG C, time 28min；
S9：Grid polycrystalline silicon, thickness 300nm are deposited, temperature is 620 DEG C, time 70min, is entered at a temperature of 950 DEG C
Row expands phosphorus, time 30min；
S10：Photoetched grid polysilicon, dry etching grid polycrystalline silicon, time 35s；
S11：Carry out boron ion injection, dosage 1.5E14cm-2, heat to promoting below grid polycrystalline silicon, temperature 950
DEG C, time 20min, obtain p-well region；
S12：Carry out source region and the N+ ion implantings in drain region, dosage 5.0E15cm-2, obtain heavy doping N+ types source region and
N+ types drain region；
S13：Low-temperature oxidation, contact zone opening is etched, obtains silicon dioxide passivation layer, and it is chemically-mechanicapolish polished, with
Prepare and make thermocouple；
S14：One layer of 800nm metallic aluminium is sputtered as source region metal pole, drain region metal pole；
S15：Photoresist is coated, makes N-type thermoelectric arm window by lithography, one layer of N+ type polysilicon is grown using LPCVD, it is adulterated
Concentration and thickness are respectively 5.0E16cm-3And 0.7um, form thermocouple N+ type polysilicon arms；
S16：Evaporation growth metallic aluminum, anti-carves Al, etches metallic pattern, form thermo-electric metal aluminium profiles thermoelectric arm；
S17：Photoresist is coated, retains specific pattern photoresist, uses H3PO4:CH2COOH:HNO3=100:10:1 anti-carves
Al, temperature are 50 DEG C, time 3min, and N-type polycrystalline silicon thermoelectric arm has been connected with metal Al types thermoelectric arm with metallic aluminium line
Come, form complete thermocouple, remove photoresist；
S18：As shown in Figure 1,5, evaporation of aluminum line, connection source electrode, grid, drain electrode and thermocouple probes, leaves two electrodes
Output stage as Seebeck pressure difference.
The SOI base LDMOS devices for having heat to electricity conversion of the internet of things oriented of the present invention, there is the thermocouple of 36 series connection.
In the source region of traditional LDMOS device, grid region, drain region electrode layer surrounding, layer of silicon dioxide layer is made, is electrically isolated, simultaneously
As the reference plane for making thermocouple；Face on silica, 36 are made by thermo-electric metal arm according to the pattern shown in Fig. 6
With the thermocouple of thermocouple N+ type polysilicons arm composition, connected with metal connecting line.The present invention is according to Seebeck effect, with 36
Individual thermocouple is put around source electrode, grid and drain electrode, and heat dissipation problem is alleviated while realizing collection of energy；Export Seebeck electricity
Pressure can be carried out power storage, realize self-powered by voltage boosting and stabilizing circuit and bulky capacitor；By detecting the big of Seebeck voltage
The small detection to realize to heat-dissipating power on SOI bases LDMOS, as power detector.
Described above is only the preferred embodiment of the present invention, it should be pointed out that：For the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (6)
- A kind of 1. SOI base LDMOS devices for having heat to electricity conversion of internet of things oriented, it is characterised in that including SOI bases LDMOS with And some thermocouples；Wherein, the SOI bases LDMOS include horizontal double diffusion obtains in SOI substrate (1) and SOI substrate (1) p-well region (2), N- drift regions (3), and p-well region (2) top layout has the N+ types source region (6) of heavy doping, and active area gold is set in N+ types source region (6) Belong to pole (12)；The side away from p-well region (2) is disposed with the N+ types drain region (7) of heavy doping, and N+ at the top of the N- drift regions (3) Drain region metal pole (13) is provided with type drain region (7)；Side on the N- drift regions (3) close to p-well region (2) is provided with grid Oxide layer (4), and grid polycrystalline silicon (5) is provided with grid oxic horizon (4)；It is provided with the SOI bases LDMOS around source region metal pole (12), grid polycrystalline silicon (5), drain region metal pole (13) surrounding Silicon dioxide passivation layer (11), and thermocouple is arranged in silicon dioxide passivation layer (11)；Each thermocouple includes being set up in parallel Thermo-electric metal arm (8) and thermocouple N+ type polysilicon arms (9), adjacent thermo-electric metal arm (8) and thermocouple N+ types are more It is sequentially connected in series between crystal silicon arm (9) by metal connecting line (10).
- 2. the SOI base LDMOS devices for having heat to electricity conversion of internet of things oriented according to claim 1, it is characterised in that logical The Temperature Distribution crossed on SOI bases LDMOS provides thermal source for thermocouple, is realized while realizing that thermoelectric energy is changed by thermocouple SOI bases LDMOS radiating.
- 3. the SOI base LDMOS devices for having heat to electricity conversion of internet of things oriented according to claim 2, it is characterised in that institute Thermocouple is stated to arrange and be sequentially connected in series, shape around source region metal pole (12), grid polycrystalline silicon (5), drain region metal pole (13) respectively Into three Thermocouple modules (14), and one end of thermocouple, close to the electrode of place module, its other end is away from place module Electrode.
- 4. the SOI base LDMOS devices for having heat to electricity conversion of internet of things oriented according to claim 3, it is characterised in that every Individual Thermocouple module (14) is provided with two thermocouple extraction poles (15), and three Thermocouple modules (14) pass through metal connecting line (10) it is sequentially connected in series.
- 5. the SOI base LDMOS devices for having heat to electricity conversion of internet of things oriented according to claim 4, it is characterised in that every Individual Thermocouple module (14) includes the thermocouple of 12 series connection.
- 6. the SOI base LDMOS devices for having heat to electricity conversion of internet of things oriented according to claim 4, it is characterised in that logical Seebeck pressure difference caused by three Thermocouple modules (14) of detection is crossed to realize the detection of heat-dissipating power on SOI bases LDMOS.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710555933.0A CN107359199B (en) | 2017-07-10 | 2017-07-10 | Internet of things-oriented SOI (silicon on insulator) -based LDMOS (laterally diffused Metal oxide semiconductor) device with thermoelectric conversion |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710555933.0A CN107359199B (en) | 2017-07-10 | 2017-07-10 | Internet of things-oriented SOI (silicon on insulator) -based LDMOS (laterally diffused Metal oxide semiconductor) device with thermoelectric conversion |
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| Publication Number | Publication Date |
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| CN107359199A true CN107359199A (en) | 2017-11-17 |
| CN107359199B CN107359199B (en) | 2020-04-24 |
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2017
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| JPH0745869A (en) * | 1993-07-30 | 1995-02-14 | Nissan Motor Co Ltd | N-type thermoelectric material |
| CN1367478A (en) * | 2002-03-01 | 2002-09-04 | 东南大学 | Plate display high voltage device structure for driving chip and its preparing method |
| CN101819993A (en) * | 2010-04-13 | 2010-09-01 | 东南大学 | P type lateral insulated gate bipolar device for reducing hot carrier effect |
| US20160086985A1 (en) * | 2014-09-22 | 2016-03-24 | Samsung Electronics Co., Ltd. | Pixel for cmos image sensor and image sensor including the same |
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