CN113242025A

CN113242025A - Monolithic integration self-powered radio frequency amplifier for green communication of Internet of things

Info

Publication number: CN113242025A
Application number: CN202110622889.7A
Authority: CN
Inventors: 廖小平; 张森
Original assignee: Southeast University
Current assignee: Southeast University
Priority date: 2021-06-04
Filing date: 2021-06-04
Publication date: 2021-08-10
Anticipated expiration: 2041-06-04
Also published as: CN113242025B

Abstract

The invention discloses a monolithic integration self-powered radio frequency amplifier facing to green communication of the Internet of things, wherein when static electricity appears on a PAD (PAD access port) of an input port or an output port, static charge is transmitted to an MEMS (micro electro mechanical system) cantilever beam through a high-frequency choke coil, so that a potential difference appears between the cantilever beam and an upper polar plate of a charge storage below the cantilever beam, the cantilever beam is pulled down by the static electricity, the static charge is transmitted to the upper polar plate of the charge storage, the charge storage converts the static electricity into electric energy, and the collection of the static electricity is completed; when the ESD protection diode receives illumination, the photon-generated carrier converts light energy into electric energy through the ESD protection diode and transmits the electric energy to the energy collection and power management circuit thereof, and the integrated collection of the electrostatic energy and the light energy is completed; when the radio frequency amplifier works, the thermocouples arranged around the source electrode and the drain electrode of the MOS tube are used for collecting heat energy generated when the radio frequency amplifier works, converting the heat energy into electric energy and outputting the electric energy to the energy collection and power management circuit.

Description

Monolithic integration self-powered radio frequency amplifier for green communication of Internet of things

Technical Field

The invention relates to the technical field of micro-electro-mechanical systems (MEMS), in particular to a monolithic integration self-powered radio frequency amplifier for green communication of the Internet of things.

Background

Electrostatic discharge (ESD) is essentially the transfer of electrostatic charge from one object to another, and in semiconductor integrated circuits, ESD can cause damage to chips throughout the entire cycle from their manufacture, packaging, testing, and use. When the pins of the chip are in contact with external objects, the current flowing through the pins may be as high as tens of amperes in nanosecond-scale time, and the voltage inside the chip may rise to tens or even hundreds of volts. In the monolithic integrated self-powered radio frequency amplifier, impedance mismatch may be caused due to parasitic effects such as parasitic capacitance and the like introduced by the ESD protection device, so that the ESD protection difficulty for designing the monolithic integrated self-powered radio frequency amplifier is higher.

The essence of the photoelectric effect is that light shines on certain substances, causing a change in the electrical properties of the substance. In the design process of ESD, the photoelectric effect can be simultaneously utilized to collect light energy, and the aim of green communication is fulfilled.

The nature of the thermoelectric effect refers to the thermoelectric phenomenon whereby a voltage difference between two substances is caused by a difference in the temperature of two different electrical conductors or semiconductors. When the rf amplifier operates, a large amount of heat is generated, which easily causes damage to the chip. Waste heat is collected through the thermoelectric effect, so that the aim of green communication can be fulfilled, and the safety and reliability of the chip can be guaranteed.

The invention designs a monolithic integrated self-powered radio frequency amplifier for green communication of the Internet of things based on a CMOS (complementary metal oxide semiconductor) process and an MEMS (micro-electromechanical system) surface micromachining process.

Disclosure of Invention

In view of the above, the present invention provides a monolithic integrated self-powered radio frequency amplifier for green communication of the internet of things, which is used to solve the problem of temperature rise of a resistive heating system caused by electrostatic energy absorbed by a resistor in the conventional electrostatic discharge protection of the radio frequency amplifier, and solve the technical problem of heat damage to a chip caused by heat dissipation due to the fact that a heat sink cannot be loaded before packaging during on-chip device testing; the invention aims to avoid the problem of thermal reliability, collect and recycle light energy and electrostatic energy by using an ESD protective diode, and realize the sustainability of green energy; and collects the dissipated energy to power the rf amplifier.

In order to achieve the purpose, the invention adopts the following technical scheme:

a monolithic integration self-powered radio frequency amplifier for green communication of the Internet of things comprises: an input port, an output port, a ground port, a first ESD protection diode D1, a second ESD protection diode D2, a third ESD protection diode D3, a fourth ESD protection diode D4, a fifth ESD protection diode D5, a sixth ESD protection diode D6, a seventh ESD protection diode D7, an eighth ESD protection diode D8, a first high-frequency choke coil L1, a second high-frequency choke coil L2, a third inductor L3, a fourth inductor L4, a fifth high-frequency choke coil L5, a sixth high-frequency choke coil L6, a first dc blocking capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a fifth capacitor C5, a sixth dc capacitor C6, a MOS transistor having a thermoelectric block conversion function, a thermocouple, and an energy collection and power management circuit thereof; wherein the content of the first and second substances,

an input signal is connected to an input matching network through a first blocking capacitor C1, the input matching network is connected to the grid electrode of the MOS tube, a first resistor R1 and a third resistor R3 are respectively the upper and lower bias of the grid electrode of the MOS tube, the source electrode of the MOS tube is grounded through a fourth resistor R4, the drain electrode of the MOS tube is connected to the output of the energy collection and power management circuit thereof through a second resistor R2, the drain of the MOS tube is connected with a sixth DC blocking capacitor C6 through an Output matching network, a signal is Output from a first Output port, the electrostatic energy of the input port is converted into electric energy through high-frequency chokes L1 and L2 and ESD protection diodes D1-D4 to be sent to an energy collection and power management circuit thereof, the electrostatic energy of the output port is converted into electric energy through high-frequency chokes L5 and L6 and ESD protection diodes D5-D8, and the electric energy is sent to an energy collection and power management circuit thereof; the energy collection and power supply management circuit is connected with the power supply E in parallel and supplies power to the radio frequency amplifier together.

Further, the ESD protection diodes D1-D8 each include: a substrate (1) of the diode, an epitaxial layer (2) of the diode, a P region (3) of the diode, an N region (4) of the diode, and SiO of the diode₂A layer (5), a borophosphosilicate glass layer (6) of the diode, a contact hole (7) of the diode, a metal insulator layer (8) of the diode, a passivation layer (9) of the diode and a PAD (10) of the diode, wherein,

the substrate (1) of the diode, the epitaxial layer (2) of the diode and the SiO of the diode₂Layer (5), borophosphosilicate glass layer (6) of the diode, metallic insulation of the diodeThe body layer (8), passivation layer (9) from the bottom up of diode set gradually, diode P district (3), diode N district (4) are arranged in epitaxial layer (2) of diode and the SiO of diode₂Between the layers (5).

Further, the MOS transistor having a thermoelectric conversion function includes: the MOS transistor comprises a MOS transistor substrate (11), an MOS transistor epitaxial layer (12), a P well (13), an N well (14), an NMOS source region (15), an NMOS drain region (16), an isolation region (17), a PMOS source region (18), a PMOS drain region (19), an MOS transistor SiO₂A layer (20), a borophosphosilicate glass layer (21) of the MOS tube, a grid (22), a thermocouple semiconductor arm (23), an MOS tube contact hole (24), an MOS tube metal part insulator layer (25), an MOS tube metal connecting wire (26), a thermocouple metal arm (27), a PAD (28) of the MOS tube and a passivation layer (29) of the MOS tube, wherein,

the source region (15) of the NMOS and the drain region (16) of the NMOS are arranged on the P well (13), the source region (18) of the PMOS and the drain region (19) of the PMOS are arranged on the N well (14), and the thermocouple metal arm (27) is close to the hot region of the MOS tube.

Further, when electrostatic discharge occurs at the input port or the output port, electrostatic charges convert electrostatic energy into electric energy through the corresponding first high-frequency choke coil L1, second high-frequency choke coil L2, fifth high-frequency choke coil L5, sixth high-frequency choke coil L6 and ESD protection diodes D1-D8, and the electric energy is transmitted to the energy collection and power management circuit thereof, so that the collection of electrostatic energy is completed;

when the ESD protection diodes D1-D8 are illuminated, the photogenerated carriers convert light energy into electric energy through the ESD protection diodes D1-D8 and transmit the electric energy to the energy collection and power management circuit thereof, and the collection of the photoelectric energy is completed.

Further, when a radio frequency signal is input from the input port, the radio frequency signal is transmitted to the MOS transistor with the thermoelectric conversion function through the first blocking capacitor C1 and the input matching network, and the thermocouple converts the thermal energy generated by the radio frequency amplifier into electric energy and transmits the electric energy to the energy collection and power management circuit thereof, thereby completing the collection of thermoelectric energy.

The invention has the beneficial effects that:

1. the principle and the structure of the invention are simple, the invention is compatible with the standard CMOS process and the MEMS surface micro-machining process, and after the ESD protection diode and the MOS tube main body part of the thermal-electric conversion are prepared by the standard CMOS process, the upper part of the diode and the lower part of the thermocouple are etched.

2. Compared with the prior art, the invention has the advantages that the ESD protection diode not only avoids the problem of thermal reliability, but also collects and recycles electrostatic energy, and meanwhile, the ESD protection diode can also collect light energy, so that the area of a chip is reduced, the integration level is improved, and the sustainability of green energy is reflected.

3. The metal arm of the thermocouple is as close to the hot area of the MOS tube as possible, the thermocouple can convert the heat energy generated by the radio frequency amplifier into electric energy and transmit the electric energy to the energy collection and power management circuit, and the heat dissipation energy of the radio frequency amplifier is collected while the damage to a chip caused by heating due to heat dissipation of a radiator which cannot be loaded before packaging is solved when a device on the chip is tested.

Drawings

Fig. 1 is a schematic structural diagram of a monolithically integrated self-powered radio frequency amplifier for green communication of the internet of things provided in embodiment 1;

fig. 2 is a schematic flowchart of a method for manufacturing a monolithic integrated self-powered radio frequency amplifier for green communication of the internet of things according to embodiment 1, where a denotes step a in embodiment 2, b denotes step b in embodiment 2, c denotes step c in embodiment 2, d denotes step d in embodiment 2, and e denotes step e in embodiment 2;

fig. 3 is a sectional view of an ESD protection diode provided in embodiment 1;

fig. 4 is a cross-sectional view of a thermo-electric conversion MOS transistor provided in example 1;

the figure includes:

1-a substrate of a diode, 2-an epitaxial layer of a diode, 3-a P region of a diode, 4-a N region of a diode, 5-a SiO2 layer of a diode, 6-a borophosphosilicate glass layer of a diode, 7-a contact hole of a diode, 8-a metal insulator layer of a diode, 9-a passivation layer of a diode, 10-a PAD of a diode, 11-a MOS substrate, 12-a MOS epitaxial layer of a transistor, 13-a P well, 14-a N well, 15-a source region of an NMOS, 16-a drain region of an NMOS, 17-an isolation region, 18-a source region of a PMOS, 19-a drain region of a PMOS, 20-a SiO2 layer of a transistor, 21-a borophosphosilicate glass layer of a transistor, 22-a gate, 23-a thermocouple semiconductor arm, 24-a MOS contact hole, 25-a metal insulator layer of a MOS transistor, 26-MOS tube metal connecting wire, 27-thermocouple metal arm, 28-0 PAD of MOS tube, and 29-passivation layer of MOS tube.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Example 1

Referring to fig. 1, fig. 3 and fig. 4, the present embodiment provides a monolithic integrated self-powered rf amplifier for green communication of the internet of things, and specifically, as shown in fig. 1, the rf amplifier includes: an input port, an output port, a ground port, a first ESD protection diode D1, a second ESD protection diode D2, a third ESD protection diode D3, a fourth ESD protection diode D4, a fifth ESD protection diode D5, a sixth ESD protection diode D6, a seventh ESD protection diode D7, an eighth ESD protection diode D8, a first high-frequency choke L1, a second high-frequency choke L2, a third inductor L3, a fourth inductor L4, a fifth high-frequency choke L5, a sixth high-frequency choke L6, a first dc blocking capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a fifth capacitor C5, a sixth dc blocking capacitor C6, a MOS transistor with a thermal-electrical conversion, an energy collection circuit, and a power management circuit thereof.

Specifically, in this embodiment, the ESD protection diodes D1-D8 each include: a substrate 1 of the diode, an epitaxial layer 2 of the diode, a P region 3 of the diode, an N region 4 of the diode, a SiO2 layer 5 of the diode, a borophosphosilicate glass layer 6 of the diode, a contact hole 7 of the diode, a metal insulator layer 8 of the diode, a passivation layer 9 of the diode and a PAD10 of the diode.

More specifically, in the present embodiment, a substrate 1 of the diode, an epitaxial layer 2 of the diode, a SiO2 layer 5 of the diode, a borophosphosilicate glass layer 6 of the diode, a metal insulator layer 8 of the diode, and a passivation layer 9 of the diode are sequentially disposed from bottom to top, and a diode P region 3 and a diode N region 4 are disposed between the epitaxial layer 2 of the diode and the SiO2 layer 5 of the diode.

More specifically, in the present embodiment, the MOS transistor having the thermal-electric conversion includes: the MOS transistor comprises a MOS transistor substrate 11, a MOS transistor epitaxial layer 12, a P well 13, an N well 14, an NMOS source region 15, an NMOS drain region 16, an isolation region 17, a PMOS source region 18, a PMOS drain region 19, a SiO2 layer 20 of an MOS transistor, a boron-phosphorus-silicon glass layer 21 of the MOS transistor, a grid 22, a thermocouple semiconductor arm 23, an MOS transistor contact hole 24, an MOS transistor metal piece insulator layer 25, an MOS transistor metal connecting wire 26, a thermocouple metal arm 27, a 0MOS transistor PAD28 and a passivation layer 29 of the MOS transistor. Wherein: the source region 15 of the NMOS and the drain region 16 of the NMOS are placed on the P well 13, and the source region 18 of the PMOS and the drain region 19 of the PMOS are placed on the N well 14.

As shown in fig. 1, when electrostatic discharge occurs at the input port or the output port, electrostatic charges cannot affect the self-powered rf amplifier due to the blocking of the first blocking capacitor C1 and the sixth blocking capacitor C6, and the electrostatic energy is converted into electric energy by the corresponding first high-frequency choke L1, second high-frequency choke L2, fifth high-frequency choke L5, sixth high-frequency choke L6, and ESD protection diodes D1-D8 to be transmitted to the energy collection and power management circuit thereof, so as to complete the collection of electrostatic energy.

When a radio-frequency signal is input from the input port, the radio-frequency signal is transmitted to the MOS tube with the thermal-electric conversion through the first blocking capacitor C1 and the input matching network, and the thermocouple can convert the heat energy generated by the radio-frequency amplifier into electric energy and transmit the electric energy to the energy collection and power management circuit thereof, so that the collection of the thermal-electric energy and the protection of the circuit are completed. The energy collection and power management circuit converts the input electrostatic energy, light energy and heat energy into direct current to be output, and the direct current is connected with the power supply E in parallel to jointly supply power to the radio frequency amplifier. The green communication of the monolithic integrated self-powered radio frequency amplifier is realized.

Example 2

Referring to fig. 2, the embodiment provides a preparation method of a monolithic integrated self-powered radio frequency amplifier for green communication of the internet of things, including:

and a, manufacturing a P-type epitaxial layer on the P-type substrate. By photolithography, low pressure vapor deposition of SiO₂Filling the isolation region to form an active region; forming a PN junction of the ESD protection circuit by ion implantation to form a P well and an N well of the MOS tube; thermally growing a gate oxide layer, and then depositing polycrystalline silicon; and forming a grid electrode of the MOS tube and forming a semiconductor arm of the thermocouple.

And b, forming Source (S) and Drain (D) regions of NMOS and PMOS by photoetching and ion implantation, and forming the MOS tube. Depositing Boron Phosphorus Silicon Glass (BPSG) by a CVD method, etching to form a contact hole and filling.

Step c, depositing metal through a sputtering process, and etching the metal through RIE to form a metal electrode of the ESD protection circuit, interconnection among the MOS tubes and a metal arm of the thermocouple; deposition of undoped SiO using CVD₂The metal piece Insulator (IMD) material is filled between the metal wires to provide insulation and isolation between the metal layers; an ESD protection circuit and a thermocouple are formed.

D, depositing metal through a sputtering process, and then performing etching treatment to form a PAD and a transmission line; and depositing a passivation layer for protecting the radio frequency amplifier.

And e, etching the passivation layer above the photocell to enable the photocell to fully receive light. The deep reactive ion etches the substrate under the heating resistor and thermocouple hot zone, so that the preparation is completed.

The criteria for distinguishing whether this structure is present are as follows:

the monolithic integration self-powered radio frequency amplifier for the green communication of the Internet of things comprises an input port, an output port, a grounding port, an ESD protection diode, a high-frequency choke coil, a blocking capacitor, an MOS (metal oxide semiconductor) tube with thermoelectric conversion, a thermocouple, an energy collection circuit and a power management circuit thereof. Compared with the traditional radio frequency amplifier electrostatic discharge protection, the electrostatic energy is absorbed through the resistor, so that the temperature of a resistance heating system is increased, the ESD protection diode not only avoids the problem of thermal reliability, but also converts the electrostatic energy into electric energy, and the sustainability of green energy is reflected. Meanwhile, when the ESD protection diode receives illumination, the photon-generated carrier converts light energy into electric energy through the ESD protection diode and transmits the electric energy to the energy collection and power management circuit thereof, and the integrated collection of the electrostatic energy and the light energy is completed. When a radio frequency signal is input from an input port, the signal is transmitted to an MOS tube with thermal-electrical conversion through a blocking capacitor and an input matching network, a metal arm of a thermocouple is as close to a hot region of the MOS tube as possible, the thermocouple can convert heat energy generated by a radio frequency amplifier into electric energy and transmit the electric energy to an energy collection and power management circuit, and when the heat dissipation energy of the radio frequency amplifier is collected, the problem that the chip is damaged by heating caused by heat dissipation of a radiator cannot be loaded before packaging is solved.

The invention is not described in detail, but is well known to those skilled in the art.

The foregoing detailed description of the preferred embodiments of the invention has been presented. It should be understood that numerous modifications and variations could be devised by those skilled in the art in light of the present teachings without departing from the inventive concepts. Therefore, the technical solutions available to those skilled in the art through logic analysis, reasoning and limited experiments based on the prior art according to the concept of the present invention should be within the scope of protection defined by the claims.

Claims

1. The utility model provides a towards thing networking green communication's monolithic integration self-power radio frequency amplifier which characterized in that includes: an input port, an output port, a ground port, a first ESD protection diode D1, a second ESD protection diode D2, a third ESD protection diode D3, a fourth ESD protection diode D4, a fifth ESD protection diode D5, a sixth ESD protection diode D6, a seventh ESD protection diode D7, an eighth ESD protection diode D8, a first high-frequency choke coil L1, a second high-frequency choke coil L2, a third inductor L3, a fourth inductor L4, a fifth high-frequency choke coil L5, a sixth high-frequency choke coil L6, a first dc blocking capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a fifth capacitor C5, a sixth dc capacitor C6, a MOS transistor having a thermoelectric block conversion function, a thermocouple, and an energy collection and power management circuit thereof; wherein the content of the first and second substances,

2. The monolithic integrated self-powered radio frequency amplifier for green communication of internet of things according to claim 1, wherein the ESD protection diodes D1-D8 each comprise: a substrate (1) of the diode, an epitaxial layer (2) of the diode, a P region (3) of the diode, an N region (4) of the diode, and SiO of the diode₂A layer (5), a borophosphosilicate glass layer (6) of the diode, a contact hole (7) of the diode, a metal insulator layer (8) of the diode, a passivation layer (9) of the diode and a PAD (10) of the diode, wherein,

the substrate (1) of the diode, the epitaxial layer (2) of the diode and the SiO of the diode₂Layer (5), borophosphosilicate glass layer (6) of diode, metalwork insulator layer (8) of diode, passivation layer (9) from the bottom up of diode set gradually, diode P district (3), diode N district (4) are arranged in diodeEpitaxial layer (2) of (A) and SiO of the diode₂Between the layers (5).

3. The monolithic integrated self-powered radio frequency amplifier for green communication of the internet of things according to claim 2, wherein the MOS transistor with the thermoelectric conversion function comprises: the MOS transistor comprises a MOS transistor substrate (11), an MOS transistor epitaxial layer (12), a P well (13), an N well (14), an NMOS source region (15), an NMOS drain region (16), an isolation region (17), a PMOS source region (18), a PMOS drain region (19), an MOS transistor SiO₂A layer (20), a borophosphosilicate glass layer (21) of the MOS tube, a grid (22), a thermocouple semiconductor arm (23), an MOS tube contact hole (24), an MOS tube metal part insulator layer (25), an MOS tube metal connecting wire (26), a thermocouple metal arm (27), a PAD (28) of the MOS tube and a passivation layer (29) of the MOS tube, wherein,

4. The monolithic integrated self-powered radio frequency amplifier oriented to green communication of the internet of things of claim 2, wherein when electrostatic discharge occurs at an input port or an output port, electrostatic charges are converted into electric energy through the corresponding first high-frequency choke coil L1, second high-frequency choke coil L2, fifth high-frequency choke coil L5, sixth high-frequency choke coil L6 and ESD protection diodes D1-D8, and the electric energy is transmitted to the energy collection and power management circuit thereof, so that the collection of the electrostatic energy is completed;

5. The monolithic integrated self-powered radio frequency amplifier oriented to green communication of the internet of things of claim 3, wherein when a radio frequency signal is input from the input port, the radio frequency signal is transmitted to the MOS transistor with the thermoelectric conversion function through the first blocking capacitor C1 and the input matching network, and the thermocouple converts thermal energy generated by the radio frequency amplifier into electric energy and transmits the electric energy to the energy collection and power management circuit thereof, so as to complete collection of thermoelectric energy.