CN102290447B - Columnar diamond Schottky diode and production method thereof - Google Patents
Columnar diamond Schottky diode and production method thereof Download PDFInfo
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- CN102290447B CN102290447B CN2010102086032A CN201010208603A CN102290447B CN 102290447 B CN102290447 B CN 102290447B CN 2010102086032 A CN2010102086032 A CN 2010102086032A CN 201010208603 A CN201010208603 A CN 201010208603A CN 102290447 B CN102290447 B CN 102290447B
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Abstract
The invention relates to a columnar diamond Schottky diode and a production method thereof. The columnar diamond Schottky diode comprises a substrate, an insulating layer, a diamond column, a first electrode and a second electrode, wherein a grid oxide layer is arranged above the substrate; the insulating layer is arranged on the grid oxide layer and comprises a first contact area and a second contact area; the diamond column is arranged on the insulating layer, the first end of the diamond column is connected with the first contact area and the second end of the diamond column is connected with the second contact area; the first electrode corresponds to the first contact area of the insulating layer and covers the first end of the diamond column; and the second electrode corresponds to the second contact area of the insulating layer and covers the second end of the diamond column.
Description
Technical field
The present invention is about a kind of columnar diamond Schottky diode and preparation method thereof, and is espespecially a kind of by produced columnar diamond Schottky diode of polycrystalline diamond and preparation method thereof, has high efficiency and diamond Schottky diode cheaply to produce.
Background technology
Schottky diode is the diode that a kind of electric conduction pressure drop is lower, allow high speed to switch.In Schottky diode, see through metal and engage the Schottky junction that produces with semiconductor, can make Schottky diode have the high speed switching characteristic, therefore can be used in less inductor and capacitor, promote simultaneously the efficient of power supply unit.Generally speaking, Schottky diode can be widely used in various Circuits System or electronic building brick, as amplifier, receiver, RF detector etc., and can be used in the rectifier of high-frequency signal.
Wherein, the semi-conducting material that is applicable to Schottky diode is as carborundum, gallium nitride or diamond etc.Wherein, especially having corrosion-resistant and resistant to elevated temperatures characteristic with diamond, is to be a kind of good electronic building brick material.At present known to the semi-conducting material of diamond as Schottky diode, can make made Schottky diode represent high on-off ratio.
Known diamond Schottky diode technique, the monocrystalline diamond film of mainly growing up on Silicon Wafer then plates metal again to form a Schottky junction in diamond film and metal junction.Yet the costliness that the technique of monocrystalline diamond film is suitable is therefore if will be applied in electronic product, certainly will cause product cost significantly to increase.
Because the application of Schottky diode is very extensive, has splendid switching characteristic in order to keep the diamond Schottky diode, and reduce the cost of manufacture of diamond Schottky diode, need badly at present and develop a kind of Schottky diode and preparation method thereof, it can more cheap technique produce the diamond Schottky diode.
Summary of the invention
Main purpose of the present invention is to provide a kind of columnar diamond Schottky diode, the diamond Schottky diode that it is lower for a kind of cost and have good switching characteristic.
Another object of the present invention is to provide a kind of manufacture method of columnar diamond Schottky diode, in order to can make the diamond Schottky diode of providing good switching characteristic from polycrystalline diamond film with low cost.
For reaching above-mentioned purpose, columnar diamond Schottky diode of the present invention comprises: a substrate, and its top is provided with a grid oxic horizon; One insulating barrier is located on grid oxic horizon, and insulating barrier includes one first contact zone and one second contact zone; At least one jewel post is located on insulating barrier, and the first end of at least one jewel post is connected with the first contact zone, and the second end of at least one jewel post is connected with the second contact zone; One first electrode, the first contact zone of corresponding insulating barrier, and cover this first end of at least one jewel post; And one second electrode, the second contact zone of corresponding insulating barrier, and be covered in the second end of at least one jewel post.
In addition, the manufacture method of columnar diamond Schottky diode of the present invention comprises the following steps: that (A) provides a substrate, and its top is formed with a grid oxic horizon; (B) form an insulating barrier on grid oxic horizon, wherein insulating barrier includes one first contact zone and one second contact zone; (C) place at least one jewel post on insulating barrier, wherein the first end of at least one jewel post is connected with the first contact zone, and the second end of at least one jewel post is connected with the second contact zone; (D) form respectively one first electrode, and one second electrode, wherein the first electrode pair is answered the first contact zone of insulating barrier and is covered the first end of at least one jewel post, and the second electrode pair is answered the second contact zone of insulating barrier and cover the second end of at least one jewel post.
Therefore, compared to the direct made diamond Schottky diode of growth monocrystalline diamond film on substrate in the past, the jewel post cost that columnar diamond Schottky diode of the present invention and preparation method thereof uses is relatively low, therefore can have under corrosion-resistant and high voltage bearing characteristic at the reservation diamond, still can represent splendid on-off ratio.
In the manufacture method of columnar diamond Schottky diode of the present invention, at least one jewel post in step (C) is made via the following step: (1) provides a diamond film; (2) the etching diamond film is to form a plurality of jewel posts; And (3) select at least one jewel post.Wherein, diamond film is preferably a polycrystalline diamond film.
Due to the relatively low polycrystalline diamond film of use cost of the present invention, form a plurality of jewel posts through etching, and pick out the jewel post with monocrystalline or twin crystal structure from a plurality of jewel posts.Therefore, compared to used the made Schottky diode of monocrystalline diamond film in the past, by the formed columnar diamond Schottky diode of manufacture method of the present invention, its cost can significantly reduce.
In addition, in columnar diamond Schottky diode of the present invention and preparation method thereof, at least one jewel post can be independently monocrystalline jewel post or twin crystal jewel post separately.Be preferably, at least one jewel post is independently boron doped monocrystalline jewel post, boron doped twin crystal jewel post, unadulterated monocrystalline jewel post or unadulterated twin crystal jewel post separately.Be more preferred from, at least one jewel post is independently boron doped monocrystalline jewel post or boron doped twin crystal jewel post separately.The best is that at least one jewel post is boron doped monocrystalline jewel post.
In columnar diamond Schottky diode of the present invention and preparation method thereof, grid oxic horizon can be a silica membrane.In addition, the material of insulating barrier can be aluminium nitride (AlN) or silicon dioxide (SiO
2).Moreover substrate can be a silicon or a silicon substrate.
In columnar diamond Schottky diode of the present invention and preparation method thereof, the first electrode is as an Ohmic electrode, and this Ohmic electrode can be one titanium/aluminium two-layer electrode or a titanium/golden two-layer electrode.In addition, the second electrode is as a Schottky electrode, and this Schottky electrode can be an aluminium electrode, a platinum electrode or a nickel electrode.
Due in columnar diamond Schottky diode of the present invention and preparation method thereof, use the polycrystalline diamond film, form jewel post via etch process, and select the jewel post with monocrystalline or twin crystal structure; Therefore compare the monocrystalline diamond film, the polycrystalline diamond film is relatively cheap many.Therefore, compared to used the made Schottky diode of monocrystalline diamond film in the past, columnar diamond Schottky diode of the present invention is from the polycrystalline diamond film that cost significantly reduces, etching is also picked out the jewel post with monocrystalline or twin crystal structure, therefore can significantly reduce the cost of manufacture of Schottky diode.In addition, because columnar diamond Schottky diode of the present invention still remains with monocrystalline or polycrystalline structure, therefore still can represent splendid switching characteristic.
Description of drawings
Figure 1A to 1B is that the jewel post of the embodiment of the present invention 1 is made the flow process generalized section;
Fig. 2 A to 2E is that the columnar diamond Schottky diode of the embodiment of the present invention 1 is made the flow process generalized section;
Fig. 3 is the current density-voltage characteristic curve of the columnar diamond Schottky diode of the embodiment of the present invention 1;
Fig. 4 is the current density-voltage characteristic curve of the columnar diamond Schottky diode of the embodiment of the present invention 2.
[primary clustering symbol description]
Embodiment
Below by particular specific embodiment, embodiments of the present invention are described, the people who has the knack of this technology can understand other advantage of the present invention and effect easily by content disclosed in the present specification.The present invention also can be implemented or be used by other different specific embodiment, and the every details in this specification also can for different viewpoints and application, be carried out various modifications and change under not departing from spirit of the present invention.
Embodiment 1-makes unadulterated columnar diamond Schottky diode
Make jewel post
The jewel post of Figure 1A to 1B the present embodiment is made the flow process generalized section.
As shown in Figure 1A, provide a diamond film 10.In the present embodiment, diamond film 10 is a polycrystalline diamond film.Then, as shown in Figure 1B, use this diamond film 10 of oxygen electric paste etching, to form a plurality of jewel posts 101.By controlling oxygen electricity slurry energy, the size of capable of controlling drilling stone column 101 and width.In the present embodiment, the length of jewel post 101 is 4 μ m approximately, and width is about 600nm.
At last, by picking out the jewel post with monocrystalline or twin crystal structure in a plurality of jewel posts 101, to carry out follow-up columnar diamond Schottky diode technique.
Make the columnar diamond Schottky diode
Fig. 2 A to 2E is that the columnar diamond Schottky diode of the present embodiment is made the flow process generalized section.
As shown in Fig. 2 A, a substrate 20 is provided, it is a silicon.Then, the silica membrane of growing up on substrate 20 is with as a grid oxic horizon 21.In the present embodiment, the thickness of grid oxic horizon 21 is 500nm.
Then, as shown in Fig. 2 B, the insulating barrier of growing up on grid oxic horizon 21, wherein the material of insulating barrier can be aluminium nitride (AlN) or silicon dioxide (SiO
2).In the present embodiment, the material of insulating barrier is silicon dioxide.Then, utilize photoetching process with patterned insulation layer, patterned insulating barrier 22 includes one first contact zone 221 and one second contact zone 222.
As shown in Fig. 2 C, under light microscope, in above-mentioned formed jewel post, utilize glass needle to stick and get a jewel post 23 with mono-crystalline structures, and this jewel post 23 is positioned on insulating barrier 22.Wherein, the first end 231 of jewel post 23 (namely wherein an end) is connected with the first contact zone 221, and second end 232 (being the other end) of jewel post 23 is connected with the second contact zone 222.
Then, as shown in Fig. 2 D, utilize photoetching process, plate titanium on the first contact zone 221 of corresponding insulating barrier 22, plated aluminum metal then, carry out again short annealing (rapid thermal anneal, RTA) and processed 5 minutes under 600 ℃, to form first electrode 24 as Ohmic electrode.At this, the first end 231 of the first contact zone 221 of the first corresponding insulating barrier 22 of electrode 24 and covering jewel post 23, and the first electrode 24 is one titanium/aluminium two-layer electrode.
At last, as shown in Fig. 2 E, utilize photoetching process, plate titanium on the second contact zone 222 of corresponding insulating barrier 22, to form second electrode 25 as Schottky electrode.At this, the second end 232 of the second contact zone 222 of the second corresponding insulating barrier 22 of electrode 25 and covering jewel post 23.
Via above-mentioned technique, make the columnar diamond Schottky diode of the present embodiment, comprising: a substrate 20, its top is provided with a grid oxic horizon 21; One insulating barrier 22 is located on grid oxic horizon 21, and insulating barrier 22 includes one first contact zone 221 and one second contact zone 221; One jewel post 23 is located on insulating barrier 22, and the first end 231 of this jewel post 23 is connected with the first contact zone 221, and the second end 232 of jewel post 23 is connected with the second contact zone 222; One first electrode 24, the first contact zone 221 of corresponding insulating barrier 22, and the first end 231 of covering jewel post 23; And one second electrode 25, the second contact zone 222 of corresponding insulating barrier 22, and cover the second end 232 of jewel post 23.
Unadulterated columnar diamond Schottky diode assessment
Fig. 3 is the current density-voltage characteristic curve of the columnar diamond Schottky diode of the present embodiment.
The formed columnar diamond Schottky diode of unadulterated jewel post has good switching characteristic as seen from Figure 3, and its on-off ratio is about 1000.
Embodiment 2-makes boron doped columnar diamond Schottky diode
Structure and the manufacture method of the columnar diamond Schottky diode of the present embodiment are identical with embodiment 1, except the present embodiment adopts boron doped polycrystalline diamond film.Therefore, in the prepared columnar diamond Schottky diode of the present embodiment, jewel post is boron doped monocrystalline jewel post or boron doped twin crystal jewel post.
Boron doped columnar diamond Schottky diode assessment
Fig. 4 is the current density-voltage characteristic curve of the columnar diamond Schottky diode of the present embodiment.
The formed columnar diamond Schottky diode of unadulterated jewel post has splendid switching characteristic as seen from Figure 4, and its on-off ratio is about 1000.
In sum, columnar diamond Schottky diode of the present invention and preparation method thereof is from the jewel post that the etching of polycrystalline diamond film institute forms, and picks out the jewel post with monocrystalline or twin crystal structure.Compare the monocrystalline diamond film, the polycrystalline diamond film is relatively cheap many.Therefore, compared to used the made Schottky diode of monocrystalline diamond film in the past, columnar diamond Schottky diode of the present invention is from lower-cost polycrystalline diamond film, etching is also picked out the jewel post with monocrystalline or twin crystal structure, therefore can significantly reduce the cost of manufacture of Schottky diode.In addition; columnar diamond Schottky diode of the present invention is except cost is low; also can be used as the crisis electric switch, and be widely used in various electronic products, as the switched power supplier in electronic circuit, location and carrier network, calculating grid, mixing and detection network and loop protection etc.
Above-described embodiment is only given an example for convenience of description, and the interest field that the present invention advocates should be as the criterion so that claim is described, but not only limits to above-described embodiment.
Claims (20)
1. columnar diamond Schottky diode comprises:
One substrate, its top is provided with a grid oxic horizon;
One insulating barrier is located on this grid oxic horizon, and this insulating barrier includes one first contact zone and one second contact zone;
At least one jewel post is located on this insulating barrier, and the first end of this at least one jewel post is connected with this first contact zone, and the second end of this at least one jewel post is connected with this second contact zone;
One first electrode to this first contact zone that should insulating barrier, and covers this first end of this at least one jewel post; And
One second electrode to this second contact zone that should insulating barrier, and is covered in this second end of this at least one jewel post.
2. columnar diamond Schottky diode as claimed in claim 1, wherein this at least one jewel post is independently a monocrystalline jewel post or a twin crystal jewel post separately.
3. columnar diamond Schottky diode as claimed in claim 1, wherein this at least one jewel post is independently a boron doped monocrystalline jewel post, a boron doped twin crystal jewel post, a unadulterated monocrystalline jewel post or a unadulterated twin crystal jewel post separately.
4. columnar diamond Schottky diode as claimed in claim 1, wherein this grid oxic horizon is a silica membrane.
5. columnar diamond Schottky diode as claimed in claim 1, wherein the material of this insulating barrier is aluminium nitride (AlN) or silicon dioxide (SiO
2).
6. columnar diamond Schottky diode as claimed in claim 1, wherein this first electrode is an Ohmic electrode.
7. columnar diamond Schottky diode as claimed in claim 6, wherein this Ohmic electrode is one titanium/aluminium two-layer electrode or a titanium/golden two-layer electrode.
8. columnar diamond Schottky diode as claimed in claim 1, wherein this second electrode is a Schottky electrode.
9. columnar diamond Schottky diode as claimed in claim 8, wherein this Schottky electrode is an aluminium electrode, a platinum electrode or a nickel electrode.
10. the manufacture method of a columnar diamond Schottky diode, it comprises the following steps:
(A) provide a substrate, its top is formed with a grid oxic horizon;
(B) form an insulating barrier on this grid oxic horizon, wherein this insulating barrier includes one first contact zone and one second contact zone;
(C) place at least one jewel post on this insulating barrier, wherein the first end of this at least one jewel post is connected with this first contact zone, and the second end of this at least one jewel post is connected with this second contact zone;
(D) form respectively one first electrode, and one second electrode, this first contact zone that wherein this first electrode pair should insulating barrier and cover this first end of this at least one jewel post, and this second contact zone that this second electrode pair should insulating barrier and cover this second end of this at least one jewel post.
11. manufacture method as claimed in claim 10, wherein at least one jewel post in step (C) is made via the following step:
(1) provide a diamond film;
(2) this diamond film of etching is to form a plurality of jewel posts; And
(3) select at least one jewel post.
12. manufacture method as claimed in claim 11, wherein this diamond film is a polycrystalline diamond film.
13. manufacture method as claimed in claim 10, wherein this at least one jewel post is independently a monocrystalline jewel post or a twin crystal jewel post separately.
14. manufacture method as claimed in claim 10, wherein this at least one jewel post is independently a boron doped monocrystalline jewel post, a boron doped twin crystal jewel post, a unadulterated monocrystalline jewel post or a unadulterated twin crystal jewel post separately.
15. manufacture method as claimed in claim 10, wherein this grid oxic horizon is a silica membrane.
16. manufacture method as claimed in claim 10, wherein the material of this insulating barrier is aluminium nitride or silicon dioxide.
17. manufacture method as claimed in claim 10, wherein this first electrode is an Ohmic electrode.
18. manufacture method as claimed in claim 17, wherein this Ohmic electrode is one titanium/aluminium two-layer electrode or a titanium/golden two-layer electrode.
19. manufacture method as claimed in claim 10, wherein this second electrode is a Schottky electrode.
20. manufacture method as claimed in claim 19, wherein this Schottky electrode is an aluminium electrode, a platinum electrode or a nickel electrode.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010102086032A CN102290447B (en) | 2010-06-18 | 2010-06-18 | Columnar diamond Schottky diode and production method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102086032A CN102290447B (en) | 2010-06-18 | 2010-06-18 | Columnar diamond Schottky diode and production method thereof |
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| CN102290447A CN102290447A (en) | 2011-12-21 |
| CN102290447B true CN102290447B (en) | 2013-06-05 |
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| CN108336128B (en) * | 2017-01-20 | 2020-12-04 | 清华大学 | Thin film transistor |
| CN108336091B (en) * | 2017-01-20 | 2021-01-05 | 清华大学 | Thin film transistor |
| CN108336142B (en) * | 2017-01-20 | 2020-09-25 | 清华大学 | Thin film transistor |
| CN108336150B (en) * | 2017-01-20 | 2020-09-29 | 清华大学 | Schottky diode, Schottky diode array and preparation method of Schottky diode |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5285084A (en) * | 1992-09-02 | 1994-02-08 | Kobe Steel Usa | Diamond schottky diodes and gas sensors fabricated therefrom |
| CN101160642A (en) * | 2005-01-26 | 2008-04-09 | 阿波罗钻石公司 | Boron-doped diamond semiconductor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6855606B2 (en) * | 2003-02-20 | 2005-02-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor nano-rod devices |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5285084A (en) * | 1992-09-02 | 1994-02-08 | Kobe Steel Usa | Diamond schottky diodes and gas sensors fabricated therefrom |
| CN101160642A (en) * | 2005-01-26 | 2008-04-09 | 阿波罗钻石公司 | Boron-doped diamond semiconductor |
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