CN102290447A - Columnar diamond Schottky diode and production method thereof - Google Patents
Columnar diamond Schottky diode and production method thereof Download PDFInfo
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- CN102290447A CN102290447A CN2010102086032A CN201010208603A CN102290447A CN 102290447 A CN102290447 A CN 102290447A CN 2010102086032 A CN2010102086032 A CN 2010102086032A CN 201010208603 A CN201010208603 A CN 201010208603A CN 102290447 A CN102290447 A CN 102290447A
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Abstract
The invention relates to a columnar diamond Schottky diode and a production method thereof. The columnar diamond Schottky diode comprises a substrate, an insulating layer, a diamond column, a first electrode and a second electrode, wherein a grid oxide layer is arranged above the substrate; the insulating layer is arranged on the grid oxide layer and comprises a first contact area and a second contact area; the diamond column is arranged on the insulating layer, the first end of the diamond column is connected with the first contact area and the second end of the diamond column is connected with the second contact area; the first electrode corresponds to the first contact area of the insulating layer and covers the first end of the diamond column; and the second electrode corresponds to the second contact area of the insulating layer and covers the second end of the diamond column.
Description
Technical field
The present invention is about a kind of column diamond Schottky diode and preparation method thereof, refers to a kind ofly by produced column diamond Schottky diode of polycrystalline diamond and preparation method thereof especially, has high efficiency and diamond Schottky diode cheaply to produce.
Background technology
That Schottky diode is that a kind of conducting voltage is fallen is lower, allow the diode that switches at a high speed.In Schottky diode, engage the Xiao Ji that is produced through metal with semiconductor and connect face, can make Schottky diode have the high speed switching characteristic, so can be used in the less inductor and capacitor, promote the efficient of power supply unit simultaneously.Generally speaking, Schottky diode can be widely used in various Circuits System or the electronic building brick, as amplifier, receiver, RF detector etc., and can be used in the rectifier of high-frequency signal.
Wherein, the semi-conducting material that is applicable to Schottky diode is as carborundum, gallium nitride or diamond etc.Wherein, having corrosion-resistant and resistant to elevated temperatures characteristic with diamond especially, is to be a kind of good electron assembly material.At present known with the semi-conducting material of diamond as Schottky diode, can make made Schottky diode represent high on-off ratio.
Known diamond Schottky diode technology, the monocrystalline diamond film of mainly growing up on Silicon Wafer then plates metal again and forms a Xiao Ji and connect face to connect face in diamond film and metal.Yet the costliness that the technology of monocrystalline diamond film is suitable is so if will be applied in the electronic product, certainly will cause product cost significantly to increase.
Because the application of Schottky diode is very extensive, has splendid switching characteristic in order to keep the diamond Schottky diode, and reduce the cost of manufacture of diamond Schottky diode, need badly at present and develop a kind of Schottky diode and preparation method thereof, it can more cheap technology produce the diamond Schottky diode.
Summary of the invention
Main purpose of the present invention is to provide a kind of column diamond Schottky diode, the diamond Schottky diode that it is lower for a kind of cost and have good switching characteristic.
Another object of the present invention is to provide a kind of manufacture method of column diamond Schottky diode, so that can from polycrystalline diamond film with low cost, make the diamond Schottky diode of providing good switching characteristic.
For reaching above-mentioned purpose, column diamond Schottky diode of the present invention comprises: a substrate, and its top is provided with a grid oxic horizon; One insulating barrier is located on the grid oxic horizon, and insulating barrier includes one first contact zone and one second contact zone; At least one jewel post is located on the insulating barrier, and first end of at least one jewel post is connected with first contact zone, and second end of at least one jewel post is connected with second contact zone; One first electrode, first contact zone of corresponding insulating barrier, and cover this first end of at least one jewel post; And one second electrode, second contact zone of corresponding insulating barrier, and be covered in second end of at least one jewel post.
In addition, the manufacture method of column diamond Schottky diode of the present invention comprises the following steps: that (A) provides a substrate, and its top is formed with a grid oxic horizon; (B) form an insulating barrier on grid oxic horizon, wherein insulating barrier includes one first contact zone and one second contact zone; (C) place at least one jewel post on insulating barrier, wherein first end of at least one jewel post is connected with first contact zone, and second end of at least one jewel post is connected with second contact zone; (D) form one first electrode, and one second electrode respectively, wherein first electrode pair is answered first contact zone of insulating barrier and is covered first end of at least one jewel post, and second electrode pair is answered second contact zone of insulating barrier and cover second end of at least one jewel post.
Therefore, compared to the direct made diamond Schottky diode of growth monocrystalline diamond film on substrate in the past, the employed jewel post cost of column diamond Schottky diode of the present invention and preparation method thereof is relatively low, so can have under the corrosion-resistant and high voltage bearing characteristic at the reservation diamond, still can represent splendid on-off ratio.
In the manufacture method of column diamond Schottky diode of the present invention, at least one jewel post in the step (C) is made via the following step: (1) provides a diamond film; (2) the etching diamond film is to form a plurality of jewel posts; And (3) select at least one jewel post.Wherein, diamond film is preferably a polycrystalline diamond film.
Because the relatively low polycrystalline diamond film of use cost of the present invention forms a plurality of jewel posts through etching, and pick out the jewel post with monocrystalline or twin crystal structure from a plurality of jewel post.Therefore, compared to used the made Schottky diode of monocrystalline diamond film in the past, by the formed column diamond of manufacture method of the present invention Schottky diode, its cost can significantly reduce.
In addition, in column diamond Schottky diode of the present invention and preparation method thereof, at least one jewel post can be monocrystalline jewel post or twin crystal jewel post independently separately.Be preferably, at least one jewel post independently is boron doped monocrystalline jewel post, boron doped twin crystal jewel post, unadulterated monocrystalline jewel post or unadulterated twin crystal jewel post separately.Be more preferred from, at least one jewel post independently is boron doped monocrystalline jewel post or boron doped twin crystal jewel post separately.The best is that at least one jewel post is boron doped monocrystalline jewel post.
In column diamond Schottky diode of the present invention and preparation method thereof, grid oxic horizon can be a silica membrane.In addition, the material of insulating barrier can be aluminium nitride (AlN) or silicon dioxide (SiO
2).Moreover substrate can be a silicon or a silicon substrate.
In column diamond Schottky diode of the present invention and preparation method thereof, first electrode is as an Ohmic electrode, and this Ohmic electrode can be one titanium/aluminium two-layer electrode or a titanium/golden two-layer electrode.In addition, second electrode is as a desolate base electrode, and this desolate base electrode can be an aluminium electrode, a platinum electrode or a nickel electrode.
Owing in column diamond Schottky diode of the present invention and preparation method thereof, use the polycrystalline diamond film, form jewel post via etch process, and select jewel post with monocrystalline or twin crystal structure; So compare the monocrystalline diamond film, the polycrystalline diamond film is relatively cheap many.Therefore, compared to used the made Schottky diode of monocrystalline diamond film in the past, column diamond Schottky diode of the present invention is from the polycrystalline diamond film that cost significantly reduces, and etching is also picked out the jewel post with monocrystalline or twin crystal structure, so can significantly reduce the cost of manufacture of Schottky diode.In addition, because column diamond Schottky diode of the present invention still remains with monocrystalline or polycrystalline structure, so still can represent splendid switching characteristic.
Description of drawings
Figure 1A to 1B is that the jewel post of the embodiment of the invention 1 is made the flow process generalized section;
Fig. 2 A to 2E is that the column diamond Schottky diode of the embodiment of the invention 1 is made the flow process generalized section;
Fig. 3 is the current density-voltage characteristic curve of the column diamond Schottky diode of the embodiment of the invention 1;
Fig. 4 is the current density-voltage characteristic curve of the column diamond Schottky diode of the embodiment of the invention 2.
[primary clustering symbol description]
10 diamond films, 101 jewel posts
20 substrates, 21 grid oxic horizons
22 insulating barriers, 221 first contact zones
222 second contact zones, 23 jewel posts
231 first ends, 232 second ends
24 first electrodes, 25 second electrodes
Embodiment
Below by particular specific embodiment explanation embodiments of the present invention, the people who has the knack of this technology can understand other advantage of the present invention and effect easily by the content that this specification disclosed.The present invention also can be implemented or be used by other different specific embodiment, and the every details in this specification also can be carried out various modifications and change at different viewpoints and application under not departing from spirit of the present invention.
Embodiment 1-makes unadulterated column diamond Schottky diode
Make jewel post
The jewel post of Figure 1A to 1B present embodiment is made the flow process generalized section.
Shown in Figure 1A, provide a diamond film 10.In present embodiment, diamond film 10 is a polycrystalline diamond film.Then, shown in Figure 1B, use this diamond film 10 of oxygen electric paste etching, to form a plurality of jewel posts 101.By control oxygen electricity slurry energy, the size of may command jewel post 101 and width.In present embodiment, the about 4 μ m of the length of jewel post 101, and width is about 600nm.
At last, by picking out jewel post in a plurality of jewel posts 101, to carry out follow-up column diamond Schottky diode technology with monocrystalline or twin crystal structure.
Make column diamond Schottky diode
Fig. 2 A to 2E is that the column diamond Schottky diode of present embodiment is made the flow process generalized section.
Shown in Fig. 2 A, a substrate 20 is provided, it is a silicon.Then, the silica membrane of growing up on substrate 20 is with as a grid oxic horizon 21.In present embodiment, the thickness of grid oxic horizon 21 is 500nm.
Then, shown in Fig. 2 B, the insulating barrier of on grid oxic horizon 21, growing up, wherein the material of insulating barrier can be aluminium nitride (AlN) or silicon dioxide (SiO
2).In present embodiment, the material of insulating barrier is a silicon dioxide.Then, utilize photoetching process with patterned insulation layer, patterned insulating barrier 22 includes one first contact zone 221 and one second contact zone 222.
Shown in Fig. 2 C, under light microscope, in above-mentioned formed jewel post, utilize glass needle to stick and get a jewel post 23, and this jewel post 23 is positioned on the insulating barrier 22 with mono-crystalline structures.Wherein, first end 231 of jewel post 23 (promptly wherein an end) is connected with first contact zone 221, and second end 232 (being the other end) of jewel post 23 is connected with second contact zone 222.
Then, shown in Fig. 2 D, utilize photoetching process, plate titanium on first contact zone 221 of corresponding insulating barrier 22, then the plated aluminum metal carries out short annealing (rapidthermal anneal again under 600 ℃, RTA) handled 5 minutes, to form first electrode 24 as Ohmic electrode.At this, first end 231 of first contact zone 221 of first electrode, 24 corresponding insulating barriers 22 and covering jewel post 23, and first electrode 24 is one titanium/aluminium two-layer electrode.
At last, shown in Fig. 2 E, utilize photoetching process, on second contact zone 222 of corresponding insulating barrier 22, plate titanium, to form second electrode 25 as desolate base electrode.At this, second end 232 of second contact zone 222 of second electrode, 25 corresponding insulating barriers 22 and covering jewel post 23.
Via above-mentioned technology, then make the column diamond Schottky diode of present embodiment, comprising: a substrate 20, its top is provided with a grid oxic horizon 21; One insulating barrier 22 is located on the grid oxic horizon 21, and insulating barrier 22 includes one first contact zone 221 and one second contact zone 221; One jewel post 23 is located on the insulating barrier 22, and first end 231 of this jewel post 23 is connected with first contact zone 221, and second end 232 of jewel post 23 is connected with second contact zone 222; One first electrode 24, first contact zone 221 of corresponding insulating barrier 22, and first end 231 of covering jewel post 23; And one second electrode 25, second contact zone 222 of corresponding insulating barrier 22, and cover second end 232 of jewel post 23.
Unadulterated column diamond Schottky diode assessment
Fig. 3 is the current density-voltage characteristic curve of the column diamond Schottky diode of present embodiment.
The formed column diamond of unadulterated as seen from Figure 3 jewel post Schottky diode has good switching characteristic, and its on-off ratio is about 1000.
Embodiment 2-makes boron doped column diamond Schottky diode
The structure and the manufacture method of the column diamond Schottky diode of present embodiment are identical with embodiment 1, except present embodiment adopts boron doped polycrystalline diamond film.Therefore, in the prepared column diamond of present embodiment Schottky diode, jewel post is boron doped monocrystalline jewel post or boron doped twin crystal jewel post.
Boron doped column diamond Schottky diode assessment
Fig. 4 is the current density-voltage characteristic curve of the column diamond Schottky diode of present embodiment.
The formed column diamond of unadulterated as seen from Figure 4 jewel post Schottky diode has splendid switching characteristic, and its on-off ratio is about 1000.
In sum, column diamond Schottky diode of the present invention and preparation method thereof is from the jewel post that the etching of polycrystalline diamond film institute forms, and picks out the jewel post with monocrystalline or twin crystal structure.Compare the monocrystalline diamond film, the polycrystalline diamond film is relatively cheap many.Therefore, compared to used the made Schottky diode of monocrystalline diamond film in the past, column diamond Schottky diode of the present invention is from lower-cost polycrystalline diamond film, and etching is also picked out the jewel post with monocrystalline or twin crystal structure, so can significantly reduce the cost of manufacture of Schottky diode.In addition; column diamond Schottky diode of the present invention is except cost is low; also can be used as the crisis electric switch, and be widely used in various electronic products, as the switched power supplier in the electronic circuit, location and carrier network, calculating grid, mixing and detection network and loop protection etc.
The foregoing description is only given an example for convenience of description, and the interest field that the present invention advocated should be as the criterion so that claim is described, but not only limits to the foregoing description.
Claims (20)
1. column diamond Schottky diode comprises:
One substrate, its top is provided with a grid oxic horizon;
One insulating barrier is located on this grid oxic horizon, and this insulating barrier includes one first contact zone and one second contact zone;
At least one jewel post is located on this insulating barrier, and first end of this at least one jewel post is connected with this first contact zone, and second end of this at least one jewel post is connected with this second contact zone;
One first electrode to this first contact zone that should insulating barrier, and covers this first end of this at least one jewel post; And
One second electrode to this second contact zone that should insulating barrier, and is covered in this second end of this at least one jewel post.
2. column diamond Schottky diode as claimed in claim 1, wherein this at least one jewel post independently is a monocrystalline jewel post or a twin crystal jewel post separately.
3. column diamond Schottky diode as claimed in claim 1, wherein this at least one jewel post independently is a boron doped monocrystalline jewel post, a boron doped twin crystal jewel post, a unadulterated monocrystalline jewel post or a unadulterated twin crystal jewel post separately.
4. column diamond Schottky diode as claimed in claim 1, wherein this grid oxic horizon is a silica membrane.
5. column diamond Schottky diode as claimed in claim 1, wherein the material of this insulating barrier is aluminium nitride (AlN) or silicon dioxide (SiO
2).
6. column diamond Schottky diode as claimed in claim 1, wherein this first electrode is an Ohmic electrode.
7. column diamond Schottky diode as claimed in claim 6, wherein this Ohmic electrode is one titanium/aluminium two-layer electrode or a titanium/golden two-layer electrode.
8. column diamond Schottky diode as claimed in claim 1, wherein this second electrode is a desolate base electrode.
9. column diamond Schottky diode as claimed in claim 8, wherein this desolate base electrode is an aluminium electrode, a platinum electrode or a nickel electrode.
10. the manufacture method of a column diamond Schottky diode, it comprises the following steps:
(A) provide a substrate, its top is formed with a grid oxic horizon;
(B) form an insulating barrier on this grid oxic horizon, wherein this insulating barrier includes one first contact zone and one second contact zone;
(C) place at least one jewel post on this insulating barrier, wherein first end of this at least one jewel post is connected with this first contact zone, and second end of this at least one jewel post is connected with this second contact zone;
(D) form one first electrode, and one second electrode respectively, this first contact zone that this first electrode pair should insulating barrier and cover this first end of this at least one jewel post wherein, and this second contact zone that this second electrode pair should insulating barrier and cover this second end of this at least one jewel post.
11. manufacture method as claimed in claim 10, wherein at least one jewel post in the step (C) is made via the following step:
(1) provides a diamond film;
(2) this diamond film of etching is to form a plurality of jewel posts; And
(3) select at least one jewel post.
12. manufacture method as claimed in claim 11, wherein this diamond film is a polycrystalline diamond film.
13. manufacture method as claimed in claim 10, wherein this at least one jewel post independently is a monocrystalline jewel post or a twin crystal jewel post separately.
14. manufacture method as claimed in claim 10, wherein this at least one jewel post independently is a boron doped monocrystalline jewel post, a boron doped twin crystal jewel post, a unadulterated monocrystalline jewel post or a unadulterated twin crystal jewel post separately.
15. manufacture method as claimed in claim 10, wherein this grid oxic horizon is a silica membrane.
16. manufacture method as claimed in claim 10, wherein the material of this insulating barrier is aluminium nitride or silicon dioxide.
17. manufacture method as claimed in claim 10, wherein this first electrode is an Ohmic electrode.
18. manufacture method as claimed in claim 17, wherein this Ohmic electrode is one titanium/aluminium two-layer electrode or a titanium/golden two-layer electrode.
19. manufacture method as claimed in claim 10, wherein this second electrode is a desolate base electrode.
20. manufacture method as claimed in claim 19, wherein this desolate base electrode is an aluminium electrode, a platinum electrode or a nickel electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102086032A CN102290447B (en) | 2010-06-18 | 2010-06-18 | Columnar diamond Schottky diode and production method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102086032A CN102290447B (en) | 2010-06-18 | 2010-06-18 | Columnar diamond Schottky diode and production method thereof |
Publications (2)
| Publication Number | Publication Date |
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| CN102290447A true CN102290447A (en) | 2011-12-21 |
| CN102290447B CN102290447B (en) | 2013-06-05 |
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| CN2010102086032A Expired - Fee Related CN102290447B (en) | 2010-06-18 | 2010-06-18 | Columnar diamond Schottky diode and production method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108336091A (en) * | 2017-01-20 | 2018-07-27 | 清华大学 | Thin film transistor (TFT) |
| CN108336142A (en) * | 2017-01-20 | 2018-07-27 | 清华大学 | Thin film transistor (TFT) |
| CN108336128A (en) * | 2017-01-20 | 2018-07-27 | 清华大学 | Thin film transistor (TFT) |
| CN108336150A (en) * | 2017-01-20 | 2018-07-27 | 清华大学 | The preparation method of Schottky diode, schottky diode array and Schottky diode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5285084A (en) * | 1992-09-02 | 1994-02-08 | Kobe Steel Usa | Diamond schottky diodes and gas sensors fabricated therefrom |
| US20050121706A1 (en) * | 2003-02-20 | 2005-06-09 | Hao-Yu Chen | Semiconductor nano-rod devices |
| CN101160642A (en) * | 2005-01-26 | 2008-04-09 | 阿波罗钻石公司 | Boron-doped diamond semiconductor |
-
2010
- 2010-06-18 CN CN2010102086032A patent/CN102290447B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5285084A (en) * | 1992-09-02 | 1994-02-08 | Kobe Steel Usa | Diamond schottky diodes and gas sensors fabricated therefrom |
| US20050121706A1 (en) * | 2003-02-20 | 2005-06-09 | Hao-Yu Chen | Semiconductor nano-rod devices |
| CN101160642A (en) * | 2005-01-26 | 2008-04-09 | 阿波罗钻石公司 | Boron-doped diamond semiconductor |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108336091A (en) * | 2017-01-20 | 2018-07-27 | 清华大学 | Thin film transistor (TFT) |
| CN108336142A (en) * | 2017-01-20 | 2018-07-27 | 清华大学 | Thin film transistor (TFT) |
| CN108336128A (en) * | 2017-01-20 | 2018-07-27 | 清华大学 | Thin film transistor (TFT) |
| CN108336150A (en) * | 2017-01-20 | 2018-07-27 | 清华大学 | The preparation method of Schottky diode, schottky diode array and Schottky diode |
| CN108336150B (en) * | 2017-01-20 | 2020-09-29 | 清华大学 | Schottky diode, Schottky diode array and preparation method of Schottky diode |
| CN108336128B (en) * | 2017-01-20 | 2020-12-04 | 清华大学 | Thin film transistor |
| CN108336091B (en) * | 2017-01-20 | 2021-01-05 | 清华大学 | Thin film transistor |
| US11264516B2 (en) | 2017-01-20 | 2022-03-01 | Tsinghua University | Thin film transistor |
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