CN209374457U - A kind of rectifier diode for wireless energy transfer - Google Patents

A kind of rectifier diode for wireless energy transfer Download PDF

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Publication number
CN209374457U
CN209374457U CN201822239595.2U CN201822239595U CN209374457U CN 209374457 U CN209374457 U CN 209374457U CN 201822239595 U CN201822239595 U CN 201822239595U CN 209374457 U CN209374457 U CN 209374457U
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layer
substrate
thickness
rectifier diode
electrode
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李雯
李薇
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Xian Cresun Innovation Technology Co Ltd
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Xian Cresun Innovation Technology Co Ltd
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Abstract

The utility model relates to a kind of rectifier diodes for wireless energy transfer, comprising: Si substrate (101)；Ge buffer layer (102) is set to the first surface of the Si substrate (101)；Epitaxial layer (103) is set to the upper surface of the Ge buffer layer (102), is carinate step structure；SiGe layer (104), is set to the ledge surface of the epitaxial layer (103)；First electrode (105), is set to the upper surface of the epitaxial layer (103)；Second electrode (106) is set to the second surface of the Si substrate (101).SiGe is arranged by the Ge layer surrounding in Schottky diode to introduce stress, and then the Schottky diode mobility with higher formed in Ge in the utility model, can greatly promote energy conversion efficiency.

Description

A kind of rectifier diode for wireless energy transfer
Technical field
The utility model category technical field of semiconductor device preparation, in particular to a kind of rectification for wireless energy transfer Diode.
Background technique
With the development of science and technology, too busy to get away various electronic equipments and automobile etc. currently, people live, as mobile phone, The a large amount of portable electronic device such as PDA, phone wrist-watch is both needed to using rechargeable battery, and more more and more universal electric car etc. Need rechargeable battery；Once these equipment dead battery capabilities, it is necessary to charging in time.Usually used charger is at work It is all to be connected by transmission line with load equipment, and the charger interface of each manufacturer production is different, it is thus possible to deposit In electric safety problem, and when often will appear grafting, junction contacts are bad, especially after long-term use, it is possible to create contact Phenomena such as bad or failure；Secondly the charging interface of distinct device is different, cannot be general, if user need it is same to multiple equipment When charging it is necessary to connect multiple chargers, cause the inconvenience used.Then a kind of induction type wireless charging device meet the tendency of and It is raw.
Wireless charging device is based on wireless energy transfer system (Wireless Power Transfer, WPT), one kind The device of transmission line limit transport electric energy can be broken through.As wireless charging technology is more and more widely used in life, mention It rises wireless charging energy transmission transfer efficiency and becomes more and more important, the raising of transfer efficiency is not only advantageous energy saving, can also To improve charging rate.
With the more and more fierce competition in wireless charging market, enterprise is undoubtedly can be improved in the transfer efficiency for improving wireless charging The competitiveness of industry, and the rectifier diode in wireless energy transfer system rectification circuit, i.e., the Schottky two in RECTIFYING ANTENNA Pole pipe decides the size of highest transfer efficiency；Therefore it prepares a kind of high conversion efficiency rectifier diode and becomes particularly important.
Utility model content
In order to solve the above-mentioned technical problem, the utility model provides a kind of rectifier diode for wireless energy transfer 10, comprising:
Si substrate 101；
Ge buffer layer 102 is set to the first surface of the Si substrate 101；
Epitaxial layer 103 is set to the upper surface of the Ge buffer layer 102, is carinate step structure；
SiGe layer 104 is set to the ledge surface of the epitaxial layer 103；
First electrode 105 is set to the carinate top surface of the epitaxial layer 103；
Second electrode 106 is set to the second surface of the Si substrate 101.
In one embodiment of the utility model, the Si substrate 101 be N-type single crystal Si substrate, doping concentration be 1 × 1020cm-3, with a thickness of 300~400 μm.
In one embodiment of the utility model, 102 material of Ge buffer layer is N-type Ge material, doping concentration 1 ×1020cm-3, with a thickness of 40~50nm.
In one embodiment of the utility model, 103 material of epitaxial layer is N-type Ge material, doping concentration 1.8 ×1014~2 × 1014cm-3, with a thickness of 900~950nm.
In one embodiment of the utility model, 103 material of epitaxial layer is N-type GeSn material, and doping concentration is 1.8×1014~2 × 1014cm-3, with a thickness of 800~1000nm.
In one embodiment of the utility model, the height of the carinate top surface of the epitaxial layer 103 to ledge surface and institute State 104 consistency of thickness of SiGe layer.
In one embodiment of the utility model, 104 material of SiGe layer is Si0.5Ge0.5Material, with a thickness of 20nm。
In one embodiment of the utility model, for the first electrode 105 with a thickness of 10~20nm, material is metal W.
In one embodiment of the utility model, for the second electrode 106 with a thickness of 10~20nm, material is metal Al。
In one embodiment of the utility model, the first electrode 105 is set to the epitaxial layer 103 carinate At the center of the carinate top surface of rank；The second electrode 106 is set at the center of the second surface of the Si substrate 101.
Compared with prior art, the utility model has the following beneficial effects: the utility model passes through in the outer of rectifier diode Prolong layer surrounding setting SiGe to introduce stress in Ge, forms direct band gap epitaxial film materials, and then the rectification two formed Pole pipe mobility with higher, rectifier diode provided by the utility model are suitable for microwave wireless energy transmission system, can Greatly promote energy conversion efficiency.
Detailed description of the invention
Below in conjunction with attached drawing, specific embodiment of the present utility model is described in detail.
Fig. 1 is a kind of structural representation of the rectifier diode for wireless energy transfer provided by the embodiment of the utility model Figure；
Fig. 2 a- Fig. 2 m is a kind of rectifier diode preparation method for wireless energy transfer of the utility model embodiment Process schematic representation.
Specific embodiment
Further detailed description, but the embodiment party of the utility model are done to the utility model combined with specific embodiments below Formula is without being limited thereto.
Embodiment one
Referring to Figure 1, Fig. 1 is a kind of rectifier diode for wireless energy transfer provided by the embodiment of the utility model Structural schematic diagram, Schottky diode 10 provided in this embodiment includes:
Si substrate 101；
Ge buffer layer 102 is set to the first surface of the Si substrate 101；
Epitaxial layer 103 is set to the upper surface of the Ge buffer layer 102, is carinate step structure；
SiGe layer 104 is set to the ledge surface of the epitaxial layer 103；
First electrode 105 is set to the carinate top surface of the epitaxial layer 103；
Second electrode 106 is set to the second surface of the Si substrate 101.
Preferably, the Si substrate 101 is N-type single crystal Si substrate, and doping concentration is 1 × 1020cm-3, with a thickness of 300~ 400μm。
Preferably, 102 material of Ge buffer layer is N-type Ge material, and doping concentration is 1 × 1020cm-3, with a thickness of 40 ~50nm.
Preferably, 103 material of epitaxial layer is N-type Ge material, and doping concentration is 1.8 × 1014~2 × 1014cm-3, With a thickness of 900~950nm.
Specifically, height and SiGe layer 104 consistency of thickness of the carinate top surface of the epitaxial layer 103 to ledge surface.
Preferably, 104 material of SiGe layer is Si0.5Ge0.5Material, with a thickness of 20nm.
Preferably, for the first electrode 105 with a thickness of 10~20nm, material is metal W.
Preferably, for the second electrode 106 with a thickness of 10~20nm, material is metal Al.
Specifically, the first electrode 105 is set at the center of the carinate top surface of the carinate step of the epitaxial layer 103； The second electrode 106 is set at the center of the second surface of the Si substrate 101.
Embodiment two
A- Fig. 2 m referring to figure 2., Fig. 2 a- Fig. 2 m are a kind of for the whole of wireless energy transfer of the utility model embodiment Flow diode preparation method process schematic representation, the method preparation of Schottky diode provided by the above embodiment through this embodiment It is formed；The preparation method includes the following steps:
S101, substrate is chosen；As shown in Figure 2 a, choosing n-type doping concentration is 1 × 1020cm-3, with a thickness of 300~400 μm N-type single crystal Si substrate 001；
S102, Ge layers of preparation the first；As shown in Figure 2 b, using molecular beam epitaxial process, in 275 DEG C~325 DEG C temperature Under, with PH3As P doped source, with a thickness of 40~50nm, doping concentration is 1 × 10 for epitaxial growth on the Si substrate20cm-3 The first Ge layer 002 of N-type, i.e. Ge buffer layer.
S103, Ge layers of preparation the 2nd；As shown in Figure 2 c, using molecular beam epitaxial process, in 500 DEG C~600 DEG C temperature Under, with PH3As P doped source, growth thickness is 900~950nm on the first Ge layer 002, doping concentration is 1.8 × 1014~2 × 1014cm-3The 2nd Ge layer 003 of N-type, i.e. Ge epitaxial layer；
S104, annealing.At a temperature of 750 DEG C~850 DEG C, in H2It anneals 10~15 minutes in atmosphere；
S105, cleaning.Use the 2nd Ge layer 003 described in diluted hydrofluoric acid and deionized water wash cycles；
S106, exposure.As shown in Figure 2 d, photoresist is smeared on 003 surface of the 2nd Ge layer, is exposed using photoetching process Photoresist retains the photoresist of 003 center position of the 2nd Ge layer；
S107, etching.As shown in Figure 2 e, in CF4And SF6In gaseous environment, sense coupling technique is utilized The described 2nd Ge layers are etched, the carinate step structure of Ge is formed；
S108, removal photomask surface glue；
S109, deposit.As shown in figure 2f, in 003 surface deposition of the 2nd Ge layer, one layer of Si3N4Layer 004；
S110, etching.As shown in Figure 2 g, the Si3N4 material is etched using etching technics, retains the carinate step of the Ge The Si of the ridged surface of structure3N4Material；
S111, SiGe layer growth.As shown in fig. 2h, using CVD technique, at a temperature of 500 DEG C~600 DEG C, with silane, germanium Alkane is gas source, the Si for being 20nm in the ledge surface growth thickness of the carinate step structure of the Ge0.5Ge0.5Layer 005；
S112, as shown in fig. 2i, removes the Si3N4Layer 004, to form Ge layers of direct band gap with Si process compatible 006。
S113, deposit the first metal layer 007.As shown in figure 2j, using electron beam evaporation process, in the direct band gap Ge Material surface deposition thickness after layer 006 and etching is that the metal W of 10~20nm forms the first metal layer of Schottky contacts 007；
S114, preparation first electrode a1.As shown in Fig. 2 k, the metal that selective eating away specifies region is carved using etching technics W etches away Si0.5Ge0.5The layer metal W on 005 surface and the part metals W on 006 surface of direct band gap Ge layer retain The metal W of 006 middle section of direct band gap Ge layer forms first electrode a1；
S115, deposit second metal layer 008.As illustrated in figure 21, using electron beam evaporation process, the of Si substrate 001 Two surface depositions form Ohmic contact second metal layer 008 with a thickness of the Al of 10~20nm；
S116, preparation second electrode a2.As shown in Fig. 2 m, the metal that selective eating away specifies region is carved using etching technics Al etches away the part metals Al of the second surface of Si substrate 001, retain the second surface middle section of Si substrate 001 Metal Al forms second electrode a2.
Embodiment three
103 material of the epitaxial layer in embodiment one may be N-type GeSn material；Referring once again to Fig. 2 a- Fig. 2 m, The present embodiment describes to 103 material of epitaxial layer in detail using the preparation method of the Schottky diode of N-type GeSn material；It should Preparation method includes the following steps:
S201, substrate is chosen；As shown in Figure 2 a, choosing n-type doping concentration is 1 × 1020cm-3, with a thickness of 300~400 μm N-type single crystal Si substrate 001；
S202, Ge layers of preparation；As shown in Figure 2 b, using molecular beam epitaxial process, at a temperature of 275 DEG C~325 DEG C, with PH3As P doped source, with a thickness of 40~50nm, doping concentration is 1 × 10 for epitaxial growth on the Si substrate20cm-3N-type Ge layer 002；Described Ge layers is buffer layer.
S203, preparation Ge1-xSnxLayer；As shown in Figure 2 c, molecular beam epitaxial process, at a temperature of 90~100 DEG C, base are utilized Quasi- pressure is 3 × 10-10Under the growing environment of torr, the Sn for choosing the Ge and 99.9999% that purity is 99.9999% makees respectively For the source Ge and the source Sn, growth is formed with a thickness of 800~1000nm on the Ge layer 002, and doping concentration is 1.8 × 1014~2 × 1014cm-3N-type Ge1-xSnxLayer 003, Ge1-xSnxMaterial molar fraction x value range is 0.01 < x < 0.04；
S204, annealing.At a temperature of 750 DEG C~850 DEG C, in H2It anneals 10~15 minutes in atmosphere；
S205, cleaning.Use Ge described in diluted hydrofluoric acid and deionized water wash cycles1-xSnxLayer 003；
S206, exposure.As shown in Figure 2 d, in the Ge1-xSnxPhotoresist is smeared on 003 surface of layer, is exposed using photoetching process Light photoresist retains the Ge1-xSnxThe photoresist of 003 center position of layer；
S207, etching.As shown in Figure 2 e, in CF4And SF6In gaseous environment, sense coupling technique is utilized Etch the Ge1-xSnxLayer forms ridge-like structure；
S208, removal photomask surface glue；
S209, deposit.As shown in figure 2f, in the Ge1-xSnx003 surface deposition of layer, one layer of Si3N4Material 004；
S210, etching.As shown in Figure 2 g, the Si is etched using etching technics3N4Material 004 retains the ridge-like structure Carinate top surface Si3N4Material 004；
S211, sige material growth.As shown in fig. 2h, using CVD technique, at a temperature of 500 DEG C~600 DEG C, with silane, Germane is gas source, in the Ge1-xSnxThe Si that growth thickness is 20nm on the two sides concave surface step of layer ridge-like structure0.5Ge0.5Layer 005；
S212, as shown in fig. 2i, removes the Si3N4Layer 004, to form the direct band gap Ge with Si process compatible1-xSnx Material 006.
S213, deposited metal 007.As shown in figure 2j, using electron beam evaporation process, in the direct band gap Ge1- xSnxThe W layer 007 that material surface deposition thickness after material 006 and etching is 10~20nm, forms Schottky contacts；
S214, as shown in Fig. 2 k, carve the metal W that selective eating away specifies region using etching technics, that is, etch away Si0.5Ge0.5The metal W and the direct band gap Ge on 005 surface of layer1-xSnxThe part metals W on 006 surface of material, described in reservation Direct band gap Ge1-xSnxThe metal W of 006 middle section of material forms electrode a1；
S215, deposited metal 008.As illustrated in figure 21, using electron beam evaporation process, in the second table of Si substrate 001 Face deposition thickness is the Al layer 008 of 10~20nm, forms Ohmic contact；
S216, as shown in Fig. 2 m, carve the metal Al that selective eating away specifies region using etching technics, that is, etch away Si lining The part metals Al of the second surface at bottom 001 retains the metal Al of the second surface middle section of Si substrate 001, forms electrode a2。
To sum up, the specific case rectifier diode for wireless energy transfer a kind of to the utility model used herein Principle and embodiment be expounded, the method for the above embodiments are only used to help understand the utility model and Its core concept；At the same time, for those skilled in the art, based on the idea of the present invention, in specific embodiment And there will be changes in application range, to sum up, the content of the present specification should not be construed as a limitation of the present invention, this reality The attached claims should be subject to novel protection scope.

Claims (10)

1. a kind of rectifier diode (10) for wireless energy transfer characterized by comprising
Si substrate (101)；
Ge buffer layer (102) is set to the first surface of the Si substrate (101)；
Epitaxial layer (103) is set to the upper surface of the Ge buffer layer (102), is carinate step structure；
SiGe layer (104), is set to the ledge surface of the epitaxial layer (103)；
First electrode (105) is set to the carinate top surface of the epitaxial layer (103)；
Second electrode (106) is set to the second surface of the Si substrate (101).
2. rectifier diode (10) according to claim 1, which is characterized in that the Si substrate (101) is N-type single crystalline Si Substrate, doping concentration are 1 × 1020cm-3, with a thickness of 300~400 μm.
3. rectifier diode (10) according to claim 1, which is characterized in that Ge buffer layer (102) material is N-type Ge material, doping concentration are 1 × 1020cm-3, with a thickness of 40~50nm.
4. rectifier diode (10) according to claim 1, which is characterized in that epitaxial layer (103) material is N-type Ge Material, doping concentration are 1.8 × 1014~2 × 1014cm-3, with a thickness of 900~950nm.
5. rectifier diode (10) according to claim 1, which is characterized in that epitaxial layer (103) material is N-type GeSn material, doping concentration are 1.8 × 1014~2 × 1014cm-3, with a thickness of 800~1000nm.
6. rectifier diode (10) according to claim 1, which is characterized in that the carinate top surface of the epitaxial layer (103) is extremely The height of ledge surface and the SiGe layer (104) consistency of thickness.
7. rectifier diode (10) according to claim 6, which is characterized in that SiGe layer (104) material is Si0.5Ge0.5Material, with a thickness of 20nm.
8. rectifier diode (10) according to claim 1, which is characterized in that the first electrode (105) is with a thickness of 10 ~20nm, material are metal W.
9. rectifier diode (10) according to claim 1, which is characterized in that the second electrode (106) is with a thickness of 10 ~20nm, material are metal Al.
10. rectifier diode (10) according to claim 1, which is characterized in that the first electrode (105) is set to institute At the center for stating the carinate top surface of epitaxial layer (103) carinate step；The second electrode (106) is set to the Si substrate (101) at the center of second surface.
CN201822239595.2U 2018-12-28 2018-12-28 A kind of rectifier diode for wireless energy transfer Expired - Fee Related CN209374457U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115188842A (en) * 2022-06-21 2022-10-14 广州诺尔光电科技有限公司 Ge avalanche photodiode on Si substrate and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115188842A (en) * 2022-06-21 2022-10-14 广州诺尔光电科技有限公司 Ge avalanche photodiode on Si substrate and manufacturing method thereof

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