CN204130553U - Based on the Schottky type Terahertz multispectrum signal detector of Meta Materials - Google Patents
Based on the Schottky type Terahertz multispectrum signal detector of Meta Materials Download PDFInfo
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- CN204130553U CN204130553U CN201420514776.0U CN201420514776U CN204130553U CN 204130553 U CN204130553 U CN 204130553U CN 201420514776 U CN201420514776 U CN 201420514776U CN 204130553 U CN204130553 U CN 204130553U
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Abstract
The utility model discloses a kind of Schottky type Terahertz multispectrum signal detector based on Meta Materials, comprise set gradually from bottom to top substrate layer, n type gaas layer, silicon dioxide layer and metamaterial layer, Ohmic electrode and Schottky electrode; Wherein metamaterial layer is the metal open loop resonating member array with periodically micro nano structure, metal open loop resonating member array contains multiple figure and characteristic size parameter thereof, each figure has complete absorption characteristic for specific electromagnetic wave, corresponding electro-magnetic wave absorption frequency range can be regulated and controled by the structure and dimensional parameters that change metal open loop resonating member, the electro-magnetic wave absorption intensity of metal open loop resonating member array in metamaterial layer can be regulated and controled by the depletion width changing N-type GaAs.The utility model has multispectral, high sensitivity and high speed characteristics, by selecting different metal open loop resonating member structure and carrying out multiple wave bands that detector can be worked in Terahertz by single-chip integration.
Description
Technical field
The utility model belongs to acquisition of signal technical field, more specifically, relates to a kind of Schottky type Terahertz multispectrum signal detector based on Meta Materials.
Background technology
Terahertz detection has in various fields such as airport security system, communication, electronic countermeasures and Non-Destructive Testings to be applied widely, and common terahertz detector mainly comprises thermal detector, schottky diode detector.
Requiring that under the occasion that high speed, high sensitivity, multispectrum signal detect, existing terahertz detector deposits problem in the following areas: 1, the spectrum imaging device of terahertz detector still needs to configure complicated driving or sweep mechanism, volume and quality large; 2, terahertz detector response speed is slower; 3, the spectrographic detection scope of terahertz detector can not be expanded easily.
Utility model content
For above defect or the Improvement requirement of prior art, the utility model provides a kind of Schottky type Terahertz multispectrum signal detector based on Meta Materials, its object is to, solve the technical problem that the volume existed in existing terahertz signal detector is large, low-response, spectrographic detection scope can not be expanded easily.
For achieving the above object, according to an aspect of the present utility model, provide a kind of Schottky type Terahertz multispectrum signal detector based on Meta Materials, comprise the substrate layer set gradually from bottom to top, n type gaas layer, silicon dioxide layer, metamaterial layer, Ohmic electrode, with a pair Schottky electrode, Ohmic electrode and Schottky electrode are arranged at the two ends, left and right of metamaterial layer respectively, metamaterial layer and n type gaas layer form Schottky contacts, metamaterial layer comprises multiple metal open loop resonating member array that can arrange in any way, and for having the metal level of periodically micro nano structure, metal open loop resonating member perforate spacing t=2 ~ 8 μm of metal open loop resonating member array, live width d=4 ~ 14 μm, period L=36 ~ 100 μm.
Preferably, the metal level of described periodicity micro nano structure contains multiple figure and characteristic size parameter thereof, and it has complete absorption characteristic for specific electromagnetic wave.
Preferably, the material of substrate layer is semi-insulating GaAs, silicon or alundum (Al2O3).
Preferably, the material of Ohmic electrode is nickel, germanium, Yi Jijin, and its thickness is respectively 20-30nm, 200-300nm and 20-30nm.
Preferably, the material of Schottky electrode is titanium and gold, and its thickness is respectively 20-30nm and 200-250nm.
Preferably, when metamaterial layer is used for electromagnetic signal detection, the cycle of its periodicity micro nano structure should much smaller than the wavelength of electromagnetic signal.
Preferably, the making material of metal open loop resonating member array is titanium and gold, and its thickness is respectively 20 ~ 30nm and 200 ~ 250nm.
In general, the above technical scheme conceived by the utility model compared with prior art, can obtain following beneficial effect:
1, the utility model is little based on the Schottky type Terahertz multispectrum signal detector volume of Meta Materials: the making due to described Meta Materials adopts micro-nano photoetching process, at 1mm
2can integrated thousands of metal open loop resonating member in size, the metal open loop resonating member array formed by multiple figure integrates, and also only needs 1 ~ 2cm
2space, the Schottky type Terahertz multispectrum signal detector volume therefore based on Meta Materials is very little, very light in weight;
2, the utility model is based on the Schottky type Terahertz multispectrum signal explorer response speed of Meta Materials: because the metal open loop resonating member of metamaterial layer has the ability absorbing corresponding wave band electromagnetic signal completely, resonate once produce with corresponding THz wave segment signal, its resonance response speed belongs to ultrahigh speed response, can produce response signal in very short time.
3, the utility model only needs a small amount of e-sourcings such as AC signal generator to assist it to carry out work based on the Schottky type Terahertz multispectrum signal detector of Meta Materials, thus saves peripheral circuit resource.
4, because metamaterial layer can increase arbitrarily new metal open loop resonating member array, therefore the utility model provide a kind of can the ability of spread signal investigative range according to actual needs, realizing can the wide range terahertz detection of flexible expansion.
Accompanying drawing explanation
Fig. 1 is the longitudinal profile schematic diagram of the utility model based on the Schottky type Terahertz multispectrum signal detector of Meta Materials.
Fig. 2 is the schematic top plan view of the utility model based on the Schottky type Terahertz multispectrum signal detector of Meta Materials.
Fig. 3 is the schematic diagram of the utility model metamaterial layer.
Fig. 4 is the structural representation of metal open loop resonating member array in metamaterial layer of the present utility model.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the utility model, and be not used in restriction the utility model.In addition, if below in described each execution mode of the utility model involved technical characteristic do not form conflict each other and just can mutually combine.
Basic ideas of the present utility model are, the utility model can be corresponding according to designed metal open loop resonating member electromagentic resonance frequency sets, the incision of the interior wave spectrum arbitrarily of performance set and redirect, cause metal to generate heat by the electromagentic resonance of the metal open loop resonating member in metamaterial layer and change the collection of energy that metallic resistance rate realizes electromagnetic wave signal, and by external AC signal by the change detection of resistivity out, thus detection terahertz signal.
An aspect of the present utility model is to provide a kind of Schottky type Terahertz multispectrum signal detector based on Meta Materials, as shown in Figure 1, the substrate layer 1, n type gaas layer 2, silicon dioxide layer 3, metamaterial layer 4, Ohmic electrode 5 and a pair Schottky electrode 61 and 62 that set gradually is comprised from bottom to top.Wherein, n type gaas layer 2 is arranged at above substrate layer 1, silicon dioxide layer 3 is arranged at above n type gaas layer 2, metamaterial layer 4 is arranged at above n type gaas layer 2, Ohmic electrode 5 is arranged at above n type gaas layer 2, Schottky electrode 61 and 62 is arranged at above silicon dioxide layer 3, and Ohmic electrode 5 and a pair Schottky electrode 6 are arranged at the two ends, left and right of metamaterial layer 4 respectively.
Metamaterial layer 4 is for having the metal level of periodically micro nano structure, and the metal level of described periodicity micro nano structure contains multiple figure and characteristic size parameter thereof, and it has complete absorption characteristic for specific electromagnetic wave.
Substrate layer 1 can be selected but be not limited to semi-insulating GaAs, can also be silicon, alundum (Al2O3) etc.
The Ohmic electrode 5 of Schottky diode can be selected but be not limited to nickel, germanium, gold, and its thickness is preferably 20-30nm, 200-300nm and 20-30nm; Schottky electrode 61 and 62 can be selected but be not limited to titanium, gold, and its thickness is preferably 20-30nm and 200-250nm.
Metamaterial layer 4 is made up of periodicity micro-nano metal structure, and itself and n type gaas layer 2 form Schottky contacts, has the complete absorbent properties to specific electromagnetic wave, can be optimized by the size of adjustment cycle micro-nano metal structure to its service band.
When metamaterial layer 4 detects for electromagnetic signal, the cycle of the periodicity micro nano structure that metamaterial layer 4 adopts much smaller than the wavelength of respective signal, thus should meet the real work performance of sub-wavelength device.
As shown in Figures 2 and 3, metamaterial layer 4 comprises multiple metal open loop resonating member array 41,42,43,44,45 and 46, should be appreciated that illustrated quantity should not be understood to limit the quantity of this array, the quantity of this array can be more than or equal to 2 integer, wherein the resonance frequency of metal open loop resonating member array 41 ~ 46 corresponds respectively to a specific Terahertz wavelength.In order to clearly show the metamaterial structure and the characteristic size parameter that work in terahertz wave band, the metal open loop resonating member array 41 in metamaterial layer 4 amplifies by the present embodiment, as shown in Figure 4.It is titanium, gold that the metal open loop resonating member of metal open loop resonating member array 41 makes material, thickness is respectively 20 ~ 30nm and 200 ~ 250nm, Schottky contacts is formed with n type gaas layer 2, when working in terahertz wave band, perforate spacing t=2 ~ 8 μm, live width d=4 ~ 14 μm, period L=36 ~ 100 μm, intermediate connection inclination angle theta=0 ~ 90 degree, intermediate connection length p=10 ~ 100 μm, intermediate connection width f≤d/4;
The above-mentioned metal open loop resonating member array be made up of different graphic is equivalent to multiple LC resonant circuit, after target electromagnetic ripple signal 7 impinges perpendicularly on metamaterial layer 4, electromagnetic wave with specific wavelength in terahertz wave band produces and resonates by these LC resonant circuits, absorb the energy of respective wavelength in incident electromagnetic wave 7, and then make metal open loop resonating member heating up, because metal open loop resonating member intermediate connections region is not only thin but also long, surface current during resonance through this region because the unexpected change of resistance must cause greatly temperature to raise rapidly, thus change rapidly the resistivity of metal open loop resonating member metal, by applying 2V alternating voltage on a pair Schottky electrode 6, when alternating voltage peak-to-peak value amplitude of variation exceedes setting threshold, show that this metal open loop resonating member has detected the signal of corresponding wavelength, when exceeding setting threshold if any multiple alternating voltage peak-to-peak value amplitude of variation, show have multiple metal open loop resonating member to detect the signal of corresponding wavelength, by applying on 0 ~ 5V reverse direct current (DC) bias Xiao Yu Ohmic electrode 5, the depletion width of the metal of metamaterial layer 4 and n type gaas layer 2 contact area is increased, improve the absorption efficiency of metamaterial layer 4 pairs of incident electromagnetic waves 7, and increase the resistivity of metal open loop resonating member further, thus the alternating voltage peak-to-peak value making Schottky electrode 61 and 62 detect is more obvious, realizes the detection of Terahertz multispectrum signal.
The utility model comprises the steps: based on the preparation method of the Schottky type Terahertz multispectrum signal detector of Meta Materials
(1) on substrate layer 1, inject Si ion by metallorganic chemical vapor deposition method, doping content is 1 × 10
16cm
-3~ 9 × 10
18cm
-3, form n type gaas layer 2 thus, its thickness is 1um ~ 2um;
(2) on n type gaas layer 2, pass through plasma enhanced CVD legal system prepared silicon dioxide layer 3, its thickness is 300nm ~ 400nm;
(3) on silicon dioxide layer 3 by positive adhesive process photoetching Ohmic electrode contact hole, and use wet etching to carry out corrosion treatment to Ohmic electrode contact hole, by negative adhesive process photoetching Ohmic electrode, the Ni/Ge/Au layer (its thickness is respectively 20-30nm/200-300nm/20-30nm) adopting the mode of electron beam evaporation to evaporate successively to be again stacked, Ni/Ge/Au layer is peeled off, thus form the Ohmic electrode with Ni/Ge/Au layer (its thickness is respectively 20-30nm/200-300nm/20-30nm), to the Ohmic electrode annealing with this Ni/Ge/Au layer, thus form Ohmic electrode 5,
(4) on silicon dioxide layer 3 first by positive adhesive process photoetching schottky junctions contact hole, and use wet etching to carry out corrosion treatment to schottky junctions contact hole, with corrode silicon dioxide layer 3, by negative adhesive process photoetching Schottky electrode, the mode of electron beam evaporation is adopted to evaporate the Ni/Au layer (its thickness is respectively 200-250nm/20-30nm) be stacked successively, Ni/Au layer is peeled off, thus form metamaterial layer 4 and the Schottky electrode 61 and 62 with Ni/Au layer (its thickness is respectively 200nm/20nm) respectively, wherein metamaterial layer 4 directly contacts with n type gaas layer 2, Schottky electrode 61 and 62 is arranged on silicon dioxide layer 3, and the distance between Schottky electrode 6 and metamaterial layer 4 is 1mm ~ 1.5mm.
Therefore, the utility model have employed Schottky diode structure, and it is using the metal open loop resonating member array of metamaterial layer as complete light absorbing medium, causes the change of AC signal peak-to-peak value to obtain ultra-wide spectral domain acquisition of signal ability by the change of resistivity; By the characteristic size parameter of optimal design metal open loop resonating member and shape, the extinction Meta Materials working in terahertz wave band can be obtained more simultaneously.Above-mentioned some metal open loop resonating member arrays are carried out packet numbering, correspond respectively to Terahertz wavelength 1, Terahertz wavelength 2, Terahertz wavelength 3, Terahertz wavelength N, wherein N is the quantity of metal open loop resonating member array, by above-mentioned preparation solution integration in the Schottky diode being substrate with monolithic GaAs, realize Terahertz multispectrum signal detector.
Those skilled in the art will readily understand; the foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all do within spirit of the present utility model and principle any amendment, equivalent to replace and improvement etc., all should be included within protection range of the present utility model.
Claims (7)
1. the Schottky type Terahertz multispectrum signal detector based on Meta Materials, comprise the substrate layer set gradually from bottom to top, n type gaas layer, silicon dioxide layer, metamaterial layer, Ohmic electrode, with a pair Schottky electrode, it is characterized in that, Ohmic electrode and Schottky electrode are arranged at the two ends, left and right of metamaterial layer respectively, metamaterial layer and n type gaas layer form Schottky contacts, metamaterial layer comprises multiple metal open loop resonating member array that can arrange in any way, and for having the metal level of periodically micro nano structure, metal open loop resonating member perforate spacing t=2 ~ 8 μm of metal open loop resonating member array, live width d=4 ~ 14 μm, period L=36 ~ 100 μm.
2. Schottky type Terahertz multispectrum signal detector according to claim 1, is characterized in that, the metal level of described periodicity micro nano structure contains multiple figure and characteristic size parameter thereof, and it has complete absorption characteristic for specific electromagnetic wave.
3. Schottky type Terahertz multispectrum signal detector according to claim 1, is characterized in that, the material of substrate layer is semi-insulating GaAs, silicon or alundum (Al2O3).
4. Schottky type Terahertz multispectrum signal detector according to claim 1, is characterized in that, the material of Ohmic electrode is nickel, germanium, Yi Jijin, and its thickness is respectively 20-30nm, 200-300nm and 20-30nm.
5. Schottky type Terahertz multispectrum signal detector according to claim 1, is characterized in that, the material of Schottky electrode is titanium and gold, and its thickness is respectively 20-30nm and 200-250nm.
6. Schottky type Terahertz multispectrum signal detector according to claim 1, is characterized in that, when metamaterial layer is used for electromagnetic signal detection, the cycle of its periodicity micro nano structure should much smaller than the wavelength of electromagnetic signal.
7. Schottky type Terahertz multispectrum signal detector according to claim 1, is characterized in that, the making material of metal open loop resonating member array is titanium and gold, and its thickness is respectively 20 ~ 30nm and 200 ~ 250nm.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241401A (en) * | 2014-09-09 | 2014-12-24 | 华中科技大学 | Schottky type terahertz multi-spectrum signal detector based on metamaterial and manufacturing method thereof |
| CN111739950A (en) * | 2019-03-19 | 2020-10-02 | 国家纳米科学中心 | Terahertz photoelectric detector |
| CN112268616A (en) * | 2020-09-03 | 2021-01-26 | 广东工业大学 | NxM terahertz detector array imaging system based on Schottky contact grating structure |
| CN112436071A (en) * | 2020-11-02 | 2021-03-02 | 天津大学 | Silicon-based grating grid terahertz detector based on frequency selective surface |
| CN113466170A (en) * | 2021-05-18 | 2021-10-01 | 中国人民解放军军事科学院国防科技创新研究院 | Multi-target detector based on multi-type resonance terahertz super-surface |
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2014
- 2014-09-09 CN CN201420514776.0U patent/CN204130553U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241401A (en) * | 2014-09-09 | 2014-12-24 | 华中科技大学 | Schottky type terahertz multi-spectrum signal detector based on metamaterial and manufacturing method thereof |
| CN111739950A (en) * | 2019-03-19 | 2020-10-02 | 国家纳米科学中心 | Terahertz photoelectric detector |
| CN112268616A (en) * | 2020-09-03 | 2021-01-26 | 广东工业大学 | NxM terahertz detector array imaging system based on Schottky contact grating structure |
| CN112268616B (en) * | 2020-09-03 | 2024-04-05 | 广东工业大学 | N X M terahertz detector array imaging system based on Schottky contact grating structure |
| CN112436071A (en) * | 2020-11-02 | 2021-03-02 | 天津大学 | Silicon-based grating grid terahertz detector based on frequency selective surface |
| CN113466170A (en) * | 2021-05-18 | 2021-10-01 | 中国人民解放军军事科学院国防科技创新研究院 | Multi-target detector based on multi-type resonance terahertz super-surface |
| CN113466170B (en) * | 2021-05-18 | 2024-05-24 | 中国人民解放军军事科学院国防科技创新研究院 | Multi-target detector based on multi-type resonance terahertz super-surface |
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