CN109962125A - A kind of plasmon enhancement type deep ultraviolet detector and preparation method thereof - Google Patents
A kind of plasmon enhancement type deep ultraviolet detector and preparation method thereof Download PDFInfo
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- CN109962125A CN109962125A CN201711340060.8A CN201711340060A CN109962125A CN 109962125 A CN109962125 A CN 109962125A CN 201711340060 A CN201711340060 A CN 201711340060A CN 109962125 A CN109962125 A CN 109962125A
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- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000013528 metallic particle Substances 0.000 claims abstract description 74
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 41
- 238000010862 gear shaping Methods 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 13
- 230000000737 periodic effect Effects 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 14
- 229910002704 AlGaN Inorganic materials 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000005566 electron beam evaporation Methods 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 239000002923 metal particle Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000002207 thermal evaporation Methods 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 18
- 230000008878 coupling Effects 0.000 abstract description 10
- 238000010168 coupling process Methods 0.000 abstract description 10
- 238000005859 coupling reaction Methods 0.000 abstract description 10
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 9
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 abstract description 7
- 230000002708 enhancing effect Effects 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 abstract description 6
- 239000002086 nanomaterial Substances 0.000 abstract description 2
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
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- 229910001199 N alloy Inorganic materials 0.000 description 2
- IWBUYGUPYWKAMK-UHFFFAOYSA-N [AlH3].[N] Chemical compound [AlH3].[N] IWBUYGUPYWKAMK-UHFFFAOYSA-N 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a kind of plasmon enhancement type deep ultraviolet detector, preparation method and applications.The plasmon enhancement type deep ultraviolet detector includes that hetero-junctions, gear shaping electrode and periodical metallic particles array, the gear shaping electrode are formed on the hetero-junctions, and the periodicity metallic particles array is formed between the gear shaping electrode.The present invention utilizes phasmon periodic diffraction resonance mode caused by local phasmon caused by metallic particles and metallic particles array, by the incidence of two kinds of ultraviolet bands optically coupling to metal Nano structure, to realize the light field enhancing of two kinds of ultraviolet bands of detector surface, material for detector is improved to the absorptivity of incident light, improves deep ultraviolet detector to the optical responsivity of two kinds of wavelength；And the period by adjusting metallic particles and size can be realized plasmon resonance and gallium nitrogen/aluminum gallium nitride detector detects the coupling of wavelength.
Description
Technical field
The present invention relates to deep ultraviolet detectors, and in particular to a kind of device junction of plasmon enhancement type deep ultraviolet detector
Structure and preparation method thereof belongs to optical detection and field of semiconductor devices.
Technical background
Metallic particles can generate collective's concussion of surface electronic, pass through the resonance of light and electronics under the excitation of incident light
Tens nanometers of surface of metal particles even smaller range is constrained light in, very strong local electromagnetic field, i.e. surface local are formed
Plasma effect can show unusual optical characteristics.In addition, when metallic particles forms cyclic array, certain
It excites under electromagnetic wavelength, phase interaction occurs for the diffraction pattern of grain periods array and the local plasmon resonance of individual particle
With showing a kind of novel optics oscillation mode.Teri W.Odom of Northwestern Univ USA et al. (2013, Nature
Nanotechnology the resonance mode for) utilizing metallic particles periodic array, it is real in conjunction with IR dyes fluorescent molecule gain material
Existing room temperature phasmon couples infrared photic lasing and shines.It is additionally based on the local of metallic particles local plasmon resonance generation
Field enhancing realizes that the increase of detector response rate is commonplace.But how by metallic particles and periodic array enhanced intensity effect
The deep ultraviolet detector improved efficiency for being effectively implemented in combination with dual wavelength has not been reported.
In recent years, AlxGa1-xN alloy material causes vast concern in ultraviolet detector preparation.AlxGa1-xN alloy is
The semiconductor of direct band gap, and with composition transfer, band gap width can continuously change to the 6.2eV of aluminium nitrogen from the 3.4eV of gallium nitrogen；
Band gap is wide to make its dark current and leakage current smaller；High quantum conversion, superior physical and chemical stability, resistance to height
The advantages that warm, corrosion-resistant, makes based on AlxGa1-xThe ultraviolet detector of N/GaN material environmental monitoring, medical treatment detection and it is ultraviolet-
Astronomy field has wide application prospects.Detector based on AlGaN/GaN includes pin knot, metal -- semiconductor Schottky potential barrier
And metal-semiconductor-metal (MSM) structure, but these structures to obtain low-dark current and high response rate still faces very big challenge.
Summary of the invention
In view of the deficiencies of the prior art, the object of the present invention is to provide a kind of plasmon enhancement type deep ultraviolet detector and
Its production method.
To realize the above goal of the invention, present invention employs technical solutions as described below:
The embodiment of the invention provides a kind of plasmon enhancement type deep ultraviolet detectors comprising hetero-junctions, gear shaping electricity
Pole and periodical metallic particles array, the gear shaping electrode are formed on the hetero-junctions, the periodicity metallic particles array
It is formed between the gear shaping electrode.
In a more specific case study on implementation, the plasmon enhancement type deep ultraviolet detector further includes buffer layer,
The hetero-junctions is formed on the buffer layer.
In a more specific case study on implementation, the hetero-junctions includes AlxGa1-xN/GaN hetero-junctions and/or GaO/GaN
Hetero-junctions, wherein 0.1≤X≤0.3.
Preferably, the hetero-junctions includes along the GaN layer and Al sequentially formed on the buffer layerxGa1-xN layers, wherein 0.1
≦X≦0.3。
In a more specific case study on implementation, the periodicity metallic particles array includes a plurality of gold of array arrangement
Metal particles, and the periodical metallic particles array meets following relationship: p-d≤40nm, 40nm≤p≤200nm, 20nm≤d
≤ 200nm, wherein p is the periodic distance between the center of two metallic particles of arbitrary neighborhood, and d is the straight of each metallic particles
Diameter.
The embodiment of the invention also provides the production method of plasmon enhancement type deep ultraviolet detector above-mentioned, packets
It includes:
Buffer layer is formed in substrate surface；
Hetero-junctions is formed in the buffer-layer surface；
Gear shaping electrode is formed on the hetero-junctions surface；And
Periodical metallic particles array is formed between the gear shaping electrode.
Compared with the prior art, the invention has the advantages that
1) present invention provides a kind of periodical metallic particles array and AlxGa1-xThe dual wavelength that N/GaN heterojunction structure combines
The deep ultraviolet detector of response, wherein periodical metallic particles array can generate certain wavelength under the excitation of electromagnetic wave
Diffraction coupled resonance mode, this resonance mode can obtain the blue shift of resonant wavelength by adjusting metallic particles array period,
It realizes that hypsochromic shift is dynamic, realizes that (i.e. near field local increases for the light field enhancing of the deep ultraviolet dual wavelength of metallic particles phasmon
By force), and then improve detector detection performance.
2) present invention utilizes the week of phasmon caused by local phasmon caused by metallic particles and array of particles
Phase property diffraction resonance mode, by the incidence of two kinds of ultraviolet bands optically coupling to metallic particles array, metallic particles array can have
The excitation of the ultraviolet phasmon of dual wavelength is realized on effect ground, and then realizes the light field enhancing of two kinds of ultraviolet bands of detector surface,
Material for detector is improved to the absorptivity of incident light, finally improves the optical responsivity of two kinds of wavelength of deep ultraviolet detector.
3) present invention can be realized plasmon resonance and gallium nitrogen/aluminum gallium nitride by the period and size for adjusting metallic particles
The coupling of detector detection wavelength.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of plasmon enhancement type deep ultraviolet detector in an exemplary embodiments of the invention.
Fig. 2 is a kind of fabrication processing of plasmon enhancement type deep ultraviolet detector in an exemplary embodiments of the invention
Figure.
Fig. 3 a and Fig. 3 b be in an of the invention exemplary embodiments in a kind of plasmon enhancement type deep ultraviolet detector to week
The analogue simulation schematic diagram of the absorption of phase property metallic particles array, scattering, transmission curve and the electromagnetic field field distribution under illumination.
Fig. 4 be in an of the invention exemplary embodiments in a kind of plasmon enhancement type deep ultraviolet detector light indicatrix with
The analogue simulation schematic diagram of metallic particles array periodicity variation.
Description of symbols: 001- substrate, 002- buffer layer, 003-GaN, 004-AlxGa1-xN, 005- gear shaping electrode,
006- periodicity metallic particles array.
Specific embodiment
In view of deficiency in the prior art, inventor is studied for a long period of time and is largely practiced, and is able to propose of the invention
Technical solution.The technical solution, its implementation process and principle etc. will be further explained as follows.But it should manage
Solution, within the scope of the present invention, each technical characteristic of the invention and specifically described in below (e.g. embodiment) each technical characteristic
Between can be combined with each other, to form a new or preferred technical solution.Due to space limitations, I will not repeat them here.
The one aspect of the embodiment of the present invention provides a kind of plasmon enhancement type deep ultraviolet detector comprising including
Hetero-junctions, gear shaping electrode and periodical metallic particles array, the gear shaping electrode are formed on the hetero-junctions, the periodicity
Metallic particles array is formed between the gear shaping electrode.
In a more specific case study on implementation, the plasmon enhancement type deep ultraviolet detector further includes buffer layer,
The hetero-junctions is formed on the buffer layer.
In a more specific case study on implementation, the hetero-junctions includes AlxGa1-xN/GaN hetero-junctions and/or GaO/GaN
Hetero-junctions, wherein 0.1≤X≤0.3.
Preferably, the hetero-junctions includes along the GaN layer and Al sequentially formed on the buffer layerxGa1-xN layers, wherein 0.1
≦X≦0.3.Wherein the band gap wavelength of GaN is close to 370 nanometers, and the band gap wavelength of AlGaN material is close to 320 nanometers.
In a more specific case study on implementation, the periodicity metallic particles array includes a plurality of gold of array arrangement
Metal particles, and the periodical metallic particles array meets following relationship: p-d≤40nm, 40nm≤p≤200nm, 20nm≤d
≤ 200nm, wherein p is the periodic distance between the center of two metallic particles of arbitrary neighborhood, and d is the straight of each metallic particles
Diameter.
Metallic particles periodic array in the present invention can generate the diffraction coupling of certain wavelength under the excitation of electromagnetic wave
Resonance mode, this resonance mode can realize that hypsochromic shift is dynamic by adjusting the metallic particles period, realize metallic particles
The near field local of the deep ultraviolet dual wavelength of phasmon enhances, and can effectively realize swashing for the ultraviolet phasmon of dual wavelength
Hair, and then improve detector detection performance.
Further, the material of the metallic particles include in aluminium, silver, zinc and gallium etc. any one or it is two or more
Combination, preferably metal alumina particles, but not limited to this.
Further, the shape of the metallic particles include in spherical, column, pyramid and polyhedron etc. any one or
Two or more combinations, preferably column, but not limited to this.
In a more specific case study on implementation, the buffer layer is set to substrate surface.
Further, the material of the buffer layer can be any in aluminium nitride, gallium nitride and AlGaN
It is a kind of
Further, the material of the substrate can be any in silicon, sapphire, gallium nitride and glass
It is a kind of.
In a more specific case study on implementation, the contact interface of the gear shaping electrode and hetero-junctions is plane.
Further, Schottky contacts are formed between the gear shaping electrode and hetero-junctions.
Further, the gear shaping electrode can be selected from but not include ni au electrode, platinum/gold electrode etc., preferably nickel/
Gold electrode.
Further, the material system of the plasmon enhancement type deep ultraviolet detector is AlGaN/GaN system.
The embodiment of the present invention another aspect provides a kind of production sides of plasmon enhancement type deep ultraviolet detector
Method comprising:
Buffer layer is formed in substrate surface；
Hetero-junctions is formed in the buffer-layer surface；
Gear shaping electrode is formed on the hetero-junctions surface；And
Periodical metallic particles array is formed between the gear shaping electrode.
Further, the production method includes: at least with appointing in electron beam evaporation, thermal evaporation, magnetron sputtering plating
A kind of mode forms gear shaping electrode on the hetero-junctions surface, and the gear shaping electrode and hetero-junctions is made to form Schottky contacts,
And then form metal-semiconductor-metal.
Wherein, after metal-semiconductor-metal detector (abbreviation MSM structure) refers to that semiconductor surface forms gear shaping electrode,
It is referred to as gear shaping (metal)-semiconductor-gear shaping (metal) panel detector structure formed in semiconductor surface.
Specifically, the preparation main flow of the gear shaping electrode be followed successively by gluing, photoetching, development, metal electrode plated film with
And the techniques such as removing.
Further, the production method is included: and at least is grown to form periodical metallic particles with electron-beam evaporation mode
Array.
Preferably, the periodical metallic particles array meets following relationship: (p-d)≤40nm, 40nm≤p≤200nm,
20nm≤d≤200nm, wherein p is the periodic distance between the center of two metallic particles of arbitrary neighborhood, and d is each metal
The diameter of grain.
Further, the hetero-junctions includes AlxGa1-xN/GaN hetero-junctions, GaO/GaN hetero-junctions etc., wherein 0.1≤X
≦0.3。
Preferably, the hetero-junctions includes along the GaN layer and Al sequentially formed on the buffer layerxGa1-xN layers, wherein 0.1
≦X≦0.3。
Further, in a more typical case study on implementation, which be may include steps of:
(1) on the substrate for having grown AlGaN/GaN material, cleaning carries out the transfer of anodised aluminium (AAO) mask；
(2) electron beam evaporation grows alumina particles, and high temperature gummed tape removes AAO mask, obtains periodical metallic particles array；
(3) photoetching technique obtains gear shaping electrode；
(4) the gear shaping electrode zone for obtaining step (3) carries out Al particle erosion, obtains clean electrode and substrate circle
Face；
(5) electron beam evaporation grows electrode, forms Schottky contacts, forms metal-semiconductor-metal；
(6) lead completes the preparation of detector to pcb board electrode, test.
By above-mentioned technical proposal, the present invention provides a kind of periodical metallic particles array and AlxGa1-xN/GaN hetero-junctions
The deep ultraviolet detector for the dual wavelength response that structure combines, utilizes local phasmon caused by metallic particles and metallic particles battle array
Phasmon periodic diffraction resonance mode caused by arranging, by the incidence of two kinds of ultraviolet bands optically coupling to metal nano knot
Structure, the light field enhancing of two kinds of ultraviolet bands of Lai Shixian detector surface improve material for detector to the absorptivity of incident light, improve
Optical responsivity of the deep ultraviolet detector to two kinds of wavelength；And the period by adjusting metallic particles and size can be realized etc. from
Plasmon resonance and the coupling of gallium nitrogen/aluminum gallium nitride detector detection wavelength.
Below in conjunction with attached drawing and more specifically embodiment makees further clear, complete solution to technical solution of the present invention
Release explanation.
Refering to Figure 1, a kind of plasmon enhancement type deep ultraviolet detector involved in the present embodiment.Its in Fig. 1
Middle X- axis, Y- axis and Z- axis respectively represent reference axis X-axis, Y-axis and Z axis.The deep ultraviolet detector includes: substrate 001, buffer layer
002, AlxGa1-xN/GaN hetero-junctions 003,004, periodical metallic particles array 006, gear shaping electrode 005.Gallium nitrogen/the gallium aluminium
Nitrogen hetero-junctions is placed on substrate 001, and the gear shaping electrode 005 is placed on gallium nitrogen/aluminum gallium nitride hetero-junctions 004, the period
Property metallic particles array 006 is placed between gear shaping electrode 005.
In the embodiment of the present invention, in the AlxGa1-xIn N/GaN hetero-junctions, 0.1≤X≤0.3.At of the invention one
More specifically in embodiment, X is about 0.23, corresponding A lxGa1-xN material is Al0.23Ga0.73N.The wherein band gap wavelength of GaN
Close to 370 nanometers, and the band gap wavelength of AlGaN material is close to 320 nanometers.
In of the invention one more specifically embodiment, X is about 0.1, corresponding A lxGa1-xN material is
Al0.1Ga0.9N。
In of the invention one more specifically embodiment, X is about 0.3, corresponding A lxGa1-xN material is
Al0.3Ga0.7N。
In the embodiment of the present invention, metallic particles be aluminium, gallium, silver in any one.Specifically at of the invention one
Embodiment in select metal alumina particles.In the embodiment of the present invention, the shape of the metallic particles can for spherical, column, pyramid,
Any one in polyhedron.Column is selected in of the invention one more specifically embodiment.In the embodiment of the present invention, institute
The relationship for stating periodical metallic particles array is p-d≤40nm, 40nm≤p≤200nm, 20≤d≤200nm.Of the invention
One more specifically p=125nm, d=95nm, p-d=30nm in embodiment.More specifically implement at of the invention one
P=40nm, d=20nm, p-d=20nm in example.P=200nm, d=in of the invention one more specifically embodiment
160nm, p-d=40nm.P=200nm, d=200nm, p-d=0nm in of the invention one more specifically embodiment.
As shown in Fig. 2, a kind of preparation process flow of plasmon enhancement type deep ultraviolet detector in the embodiment of the present invention
Specific step is as follows:
Step 1: on the substrate for having grown AlGaN/GaN material, cleaning carries out turning for anodised aluminium (AAO) mask
It moves；
Step 2: electron beam evaporation grows alumina particles, and high temperature gummed tape removes AAO mask, obtains the Al particle of periodic structure；
Step 3: photoetching technique obtains gear shaping electrode；
Step 4: the gear shaping electrode zone that step 3 is obtained carries out Al particle erosion, obtains clean electrode and substrate
Interface；
Step 5: electron beam evaporation grows electrode, forms Schottky contacts, forms metal-semiconductor-metal；
Step 6: the preparation of detector is completed in lead to pcb board electrode, test.
Electrode-hetero-junctions is needed to form Schottky contacts, optional ni au, platinum/gold electrode, the present embodiment selection in the present invention
Metal gear shaping electrode is Ni/Au, electrode width and is spaced about 10 μm, and the region area of electrode is about 1000 μm.
Fig. 3 a show further embodiment of this invention P=150nm, the suction of the periodical metal Al array of particles of d=130nm
Receipts, scattering and transmission curve analogue simulation, for absorption curve relative to scattering and transmission curve there are two peak value, peak position I is Al
The local plasmon resonance wavelength of grain, for wavelength within the scope of 260~320nm, peak position III is the period of metallic particles array
Property diffraction maximum, wavelength is in 330~370nm range.Fig. 3 b is respectively point of local electromagnetic field under Three models under illumination effect
Butut, it can be seen that I, III local enhanced field is distributed in the two sides of particle under Three models.
Fig. 4 is shown in a kind of plasmon enhancement type deep ultraviolet detector provided in the present embodiment with cyclically-varying
Metallic particles array resonance response wavelength analogue simulation, selected in the present embodiment respectively period p (220,200,180,
160,140,120) six groups of Al grain periods arrays of nm, d (200,180,160,140,120,100) nm, can from simulation curve
To find out, detector corresponds to two resonance response peaks, and the peak position of the about 300nm corresponding from effect such as local of Al particle is with the period
Variation range is small, and the response peak corresponding wavelength of periodical metallic particles array is in about 360nm, it can be seen that as the period is from 220-
The increase of 120nm, response peak position is mobile from 530-310nm, and blue shift occurs.It can be seen that passing through periodical metallic particles array
In conjunction with gallium nitrogen/aluminum gallium nitride hetero-junctions, the ultraviolet double-wavelength plasmon resonance of metallic particles array may be implemented, match
GaN and AlGaN band gap wavelength realizes the enhancing detection of the dual wavelength of GaN/AlGaN ultraviolet detector.
Through the foregoing embodiment it can be found that periodicity metallic particles array provided by the invention and AlxGa1-xN/GaN is different
The deep ultraviolet detector for the dual wavelength response that matter structure combines, utilizes local phasmon and metal caused by metallic particles
Phasmon periodic diffraction resonance mode caused by grain array, by the incidence of two kinds of ultraviolet bands optically coupling to metal nano
Structure, the light field enhancing of two kinds of ultraviolet bands of Lai Shixian detector surface, improves material for detector to the absorptivity of incident light, changes
Optical responsivity of the kind deep ultraviolet detector to two kinds of wavelength；And period and size by adjusting metallic particles can be realized
From plasmon resonance and the coupling of gallium nitrogen/aluminum gallium nitride detector detection wavelength.
In addition, inventor also refers to the mode of above-described embodiment, with the other raw materials and item listed in this specification
Part etc. is tested, and obtained plasmon enhancement type deep ultraviolet detector also has ideal performance, i.e., same to be made
With excellent detection performance, realize plasmon resonance and the coupling of gallium nitrogen/aluminum gallium nitride detector detection wavelength etc. from
The enhanced deep ultraviolet detector of excimer.
It should be noted that the terms "include", "comprise" or its any other variant are intended in the present specification
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence " including one ... ", it is not excluded that wrapping
Include in the process, method, article or equipment of the element that there is also other identical elements.
It should be appreciated that the above preferred embodiment is merely to illustrate the contents of the present invention, in addition to this, there are also other by the present invention
Embodiment, as long as those skilled in the art because of technical inspiration involved in the present invention, and use equivalent replacement or equivalent deformation
The technical solution that mode is formed is fallen within the scope of protection of the present invention.
Claims (14)
1. a kind of plasmon enhancement type deep ultraviolet detector, it is characterised in that including hetero-junctions, gear shaping electrode and periodical gold
Metal particles array, the gear shaping electrode are formed on the hetero-junctions, and the periodicity metallic particles array is formed in described insert
Between tooth electrode.
2. plasmon enhancement type deep ultraviolet detector according to claim 1, it is characterised in that it further include buffer layer, institute
Hetero-junctions is stated to be formed on the buffer layer.
3. plasmon enhancement type deep ultraviolet detector according to claim 1 or 2, it is characterised in that: the hetero-junctions
Including AlxGa1-xN/GaN hetero-junctions and/or GaO/GaN hetero-junctions, wherein 0.1≤X≤0.3；Preferably, the hetero-junctions packet
It includes along the GaN layer and Al sequentially formed on the buffer layerxGa1-xN layers, wherein 0.1≤X≤0.3.
4. plasmon enhancement type deep ultraviolet detector according to claim 1 or 2, it is characterised in that: the periodicity
Metallic particles array includes a plurality of metallic particles of array arrangement, and the periodical metallic particles array meets with ShiShimonoseki
System: p-d≤40nm, 40nm≤p≤200nm, 40nm≤d≤200nm, wherein p is the center of two metallic particles of arbitrary neighborhood
Between periodic distance, d be each metallic particles diameter.
5. plasmon enhancement type deep ultraviolet detector according to claim 4, it is characterised in that: the metallic particles
Material includes any one or two or more combinations in aluminium, silver, zinc and gallium.
6. plasmon enhancement type deep ultraviolet detector according to claim 4, it is characterised in that: the metallic particles
Shape includes any one or two or more combinations in spherical, column, pyramid and polyhedron.
7. plasmon enhancement type deep ultraviolet detector according to claim 2, it is characterised in that: the buffer layer setting
In substrate surface；Preferably, the material of the buffer layer includes any one in aluminium nitride, gallium nitride and AlGaN；It is preferred that
, the material of the substrate includes any one in silicon, sapphire, gallium nitride and glass.
8. according to claim 1,2, plasmon enhancement type deep ultraviolet detector described in any one of 5-7, it is characterised in that:
The contact interface of the gear shaping electrode and hetero-junctions is plane.
9. according to claim 1,2, plasmon enhancement type deep ultraviolet detector described in any one of 5-7, it is characterised in that:
Schottky contacts are formed between the gear shaping electrode and hetero-junctions.
10. plasmon enhancement type deep ultraviolet detector according to claim 9, it is characterised in that: the gear shaping electrode
Including ni au electrode or platinum/gold electrode.
11. the production method of plasmon enhancement type deep ultraviolet detector of any of claims 1-10, feature
Be include:
Buffer layer is formed in substrate surface；
Hetero-junctions is formed in the buffer-layer surface；
Gear shaping electrode is formed on the hetero-junctions surface；And
Periodical metallic particles array is formed between the gear shaping electrode.
12. production method according to claim 11, characterized by comprising: at least with electron beam evaporation, thermal evaporation, magnetic
Any mode controlled in sputter coating forms gear shaping electrode on the hetero-junctions surface, and makes the gear shaping electrode and hetero-junctions
Schottky contacts are formed, and then form metal-semiconductor-metal.
13. production method according to claim 11, characterized by comprising: at least grow shape with electron-beam evaporation mode
At periodical metallic particles array；Preferably, the periodical metallic particles array meets following relationship: (p-d)≤40nm,
40nm≤p≤200nm, 20nm≤d≤200nm, wherein p be two metallic particles of arbitrary neighborhood center between period away from
From d is the diameter of each metallic particles.
14. production method according to claim 11, it is characterised in that: the hetero-junctions includes AlxGa1-xN/GaN is heterogeneous
Knot and/or GaO/GaN hetero-junctions, wherein 0.1≤X≤0.3；Preferably, the hetero-junctions includes along successively shape on the buffer layer
At GaN layer and AlxGa1-xN layers, wherein 0.1≤X≤0.3.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110783416A (en) * | 2019-11-04 | 2020-02-11 | 深圳基本半导体有限公司 | Light-operated thyristor based on surface plasmon, manufacturing method and electronic equipment |
| CN111129225A (en) * | 2019-12-26 | 2020-05-08 | 重庆大学 | Ultraviolet photoelectric detector and preparation method thereof |
| CN112420398A (en) * | 2020-11-13 | 2021-02-26 | 中国科学技术大学 | Photoelectrochemical photodetector based on plasmon enhancement and preparation method thereof |
| CN113013278A (en) * | 2021-03-12 | 2021-06-22 | 太原理工大学 | Silicon carbide-based full-spectrum response photoelectric detector and preparation method thereof |
| CN117913186A (en) * | 2023-12-26 | 2024-04-19 | 北京邮电大学 | AlGaN-based light-emitting unit attached with nano antenna and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102184975A (en) * | 2011-04-11 | 2011-09-14 | 复旦大学 | Thin film solar cell with improved photoelectric conversion efficiency and manufacturing method thereof |
| CN103346232A (en) * | 2013-06-28 | 2013-10-09 | 厦门大学 | Dark ultraviolet light emitting diode and preparation method thereof |
| CN103460807A (en) * | 2011-03-31 | 2013-12-18 | 住友化学株式会社 | Metal particle assembly |
| CN106784056A (en) * | 2016-12-22 | 2017-05-31 | 东南大学 | A kind of adjustable photodetector of response spectrum |
-
2017
- 2017-12-14 CN CN201711340060.8A patent/CN109962125B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103460807A (en) * | 2011-03-31 | 2013-12-18 | 住友化学株式会社 | Metal particle assembly |
| CN102184975A (en) * | 2011-04-11 | 2011-09-14 | 复旦大学 | Thin film solar cell with improved photoelectric conversion efficiency and manufacturing method thereof |
| CN103346232A (en) * | 2013-06-28 | 2013-10-09 | 厦门大学 | Dark ultraviolet light emitting diode and preparation method thereof |
| CN106784056A (en) * | 2016-12-22 | 2017-05-31 | 东南大学 | A kind of adjustable photodetector of response spectrum |
Non-Patent Citations (1)
| Title |
|---|
| MOTOAKI IWAYA，ETC.: "《High-performance UV detector based on AlGaN/GaN junction heterostructure-field-effect transistor with a p-GaN gate》", 《PHYS.STATUS SOLIDI C 6》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110783416A (en) * | 2019-11-04 | 2020-02-11 | 深圳基本半导体有限公司 | Light-operated thyristor based on surface plasmon, manufacturing method and electronic equipment |
| CN111129225A (en) * | 2019-12-26 | 2020-05-08 | 重庆大学 | Ultraviolet photoelectric detector and preparation method thereof |
| CN112420398A (en) * | 2020-11-13 | 2021-02-26 | 中国科学技术大学 | Photoelectrochemical photodetector based on plasmon enhancement and preparation method thereof |
| CN113013278A (en) * | 2021-03-12 | 2021-06-22 | 太原理工大学 | Silicon carbide-based full-spectrum response photoelectric detector and preparation method thereof |
| CN113013278B (en) * | 2021-03-12 | 2023-02-03 | 太原理工大学 | Silicon carbide-based full-spectrum response photoelectric detector and preparation method thereof |
| CN117913186A (en) * | 2023-12-26 | 2024-04-19 | 北京邮电大学 | AlGaN-based light-emitting unit attached with nano antenna and preparation method thereof |
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