CN109962125A - A plasmon-enhanced deep ultraviolet detector and method of making the same - Google Patents
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Abstract
本发明公开了一种等离激元增强型深紫外探测器、其制备方法及应用。所述等离激元增强型深紫外探测器包括异质结、插齿电极及周期性金属颗粒阵列，所述插齿电极形成于所述异质结上，所述周期性金属颗粒阵列形成于所述插齿电极之间。本发明利用金属颗粒所产生的局域等离激元和金属颗粒阵列所产生的等离激元周期性衍射共振模式，将两种紫外波段的入射光耦合到金属纳米结构，来实现探测器表面两种紫外波段的光场增强，提高探测器材料对入射光的吸收率，改善深紫外探测器对两种波长的光响应度；并且通过调节金属颗粒的周期和尺寸能够实现等离激元共振和镓氮/铝镓氮探测器探测波长的耦合。
The invention discloses a plasmon enhanced deep ultraviolet detector, a preparation method and application thereof. The plasmon-enhanced deep ultraviolet detector includes a heterojunction, a tooth-shaping electrode and a periodic metal particle array, the tooth-shaping electrode is formed on the heterojunction, and the periodic metal particle array is formed on the heterojunction. between the pinion electrodes. The invention utilizes the localized plasmon generated by the metal particles and the periodic diffraction resonance mode of the plasmon generated by the metal particle array to couple the incident light of the two ultraviolet wavelength bands to the metal nanostructure to realize the surface of the detector. The enhancement of the optical field in the two ultraviolet wavelength bands increases the absorption rate of the detector material to incident light and improves the photoresponsivity of the deep ultraviolet detector to the two wavelengths; and plasmon resonance can be achieved by adjusting the period and size of the metal particles Coupling with the detection wavelength of the GaN/AlGaN detector.
Description
技术领域technical field
本发明涉及深紫外探测器，具体涉及一种等离激元增强型深紫外探测器的器件结构及其制作方法，属于光探测及半导体器件领域。The invention relates to a deep-ultraviolet detector, in particular to a device structure of a plasmon-enhanced deep-ultraviolet detector and a manufacturing method thereof, belonging to the fields of light detection and semiconductor devices.
技术背景technical background
金属颗粒在入射光的激励下，会产生表面电子的集体震荡，通过光和电子的共振将光约束在金属颗粒表面几十纳米甚至更小的范围，形成很强的局域电磁场，即表面局域等离子体效应，可以表现奇异的光学特性。另外，当金属颗粒形成周期性阵列时，在一定的激发电磁波长下，颗粒周期阵列的衍射模式和单个颗粒的局域等离激元共振发生相互作用，显示出一种新奇光学振荡模式。美国西北大学的Teri W.Odom等人(2013,NatureNanotechnology)利用金属颗粒周期阵列的共振模式，结合红外染料荧光分子增益材料，实现室温等离激元耦合红外光致激射发光。另外基于金属颗粒局域等离激元共振产生的局域场增强实现探测器响应率增加已屡见不鲜。但是如何将金属颗粒和周期阵列场强增强效应有效结合实现双波长的深紫外探测器效率改善还未见报道。Under the excitation of incident light, metal particles will generate collective oscillations of surface electrons, and the light will be confined to the surface of metal particles in the range of tens of nanometers or even smaller by the resonance of light and electrons, forming a strong local electromagnetic field, that is, the surface localization. Domain plasmonic effect, which can exhibit exotic optical properties. In addition, when metal particles form periodic arrays, at a certain excitation electromagnetic wavelength, the diffraction pattern of the periodic array of particles interacts with the localized plasmon resonance of a single particle, showing a novel optical oscillation mode. Teri W. Odom et al. (2013, Nature Nanotechnology) of Northwestern University used the resonance modes of periodic arrays of metal particles, combined with infrared dye fluorescent molecular gain materials, to realize room temperature plasmon coupled infrared photolaser emission. In addition, it is not uncommon to increase the responsivity of detectors based on the local field enhancement generated by the local plasmon resonance of metal particles. However, how to effectively combine metal particles and periodic array field strength enhancement effects to achieve dual-wavelength DUV detector efficiency improvement has not yet been reported.
近年来，AlxGa1-xN合金材料在紫外探测器制备中引起了广大关注。AlxGa1-xN合金是直接带隙的半导体，且随成分变化，其带隙宽度可连续从镓氮的3.4eV变化到铝氮的6.2eV；带隙宽使得它的暗电流和漏电流较小；高的量子转化效率、优越的物理化学稳定性、耐高温、耐腐蚀等优点，使基于AlxGa1-xN/GaN材料的紫外探测器在环境监控、医疗检测及紫外-天文学领域有广泛应用前景。基于AlGaN/GaN的探测器包括pin结、金属-半导体肖特基势垒及金属-半导体-金属(MSM)结构，但这些结构要获得低暗电流和高响应率仍面临很大挑战。In recent years, AlxGa1 - xN alloy materials have attracted great attention in the preparation of UV detectors. Al x Ga 1-x N alloy is a semiconductor with direct band gap, and its band gap width can continuously change from 3.4 eV of gallium nitride to 6.2 eV of aluminum nitrogen with the change of composition; the wide band gap makes its dark current and leakage Small current; high quantum conversion efficiency, excellent physical and chemical stability, high temperature resistance, corrosion resistance and other advantages, make UV detectors based on Al x Ga 1-x N/GaN materials in environmental monitoring, medical testing and UV- It has broad application prospects in the field of astronomy. AlGaN/GaN-based detectors include pin junctions, metal-semiconductor Schottky barriers, and metal-semiconductor-metal (MSM) structures, but these structures still face great challenges to achieve low dark current and high responsivity.
发明内容SUMMARY OF THE INVENTION
针对现有技术的不足，本发明的目的是提供一种等离激元增强型深紫外探测器及其制作方法。In view of the deficiencies of the prior art, the purpose of the present invention is to provide a plasmon-enhanced deep ultraviolet detector and a manufacturing method thereof.
为实现以上发明目的，本发明采用了如下所述的技术方案：In order to realize the above object of the invention, the present invention adopts the following technical scheme:
本发明实施例提供了一种等离激元增强型深紫外探测器，其包括异质结、插齿电极及周期性金属颗粒阵列，所述插齿电极形成于所述异质结上，所述周期性金属颗粒阵列形成于所述插齿电极之间。An embodiment of the present invention provides a plasmon-enhanced deep ultraviolet detector, which includes a heterojunction, a tooth-shaping electrode, and a periodic metal particle array, and the tooth-shaping electrode is formed on the heterojunction, so that the The periodic metal particle array is formed between the tooth-shaping electrodes.
在一较为具体的实施案例中，所述等离激元增强型深紫外探测器还包括缓冲层，所述异质结形成在缓冲层上。In a specific implementation case, the plasmon-enhanced deep ultraviolet detector further includes a buffer layer, and the heterojunction is formed on the buffer layer.
在一较为具体的实施案例中，所述异质结包括AlxGa1-xN/GaN异质结和/或GaO/GaN异质结，其中，0.1≦X≦0.3。In a more specific implementation case, the heterojunction includes an AlxGa1 - xN /GaN heterojunction and/or a GaO/GaN heterojunction, wherein 0.1≦X≦0.3.
优选的，所述异质结包括沿在缓冲层上依次形成的GaN层和AlxGa1-xN层，其中，0.1≦X≦0.3。Preferably, the heterojunction includes a GaN layer and an AlxGa1 -xN layer formed on the buffer layer in sequence, wherein 0.1≦X≦0.3.
在一较为具体的实施案例中，所述周期性金属颗粒阵列包括阵列排布的复数个金属颗粒，且所述周期性金属颗粒阵列满足以下关系：p-d≦40nm，40nm≦p≦200nm，20nm≦d≦200nm，其中，p为任意相邻两个金属颗粒的中心之间的周期距离，d为每个金属颗粒的直径。In a more specific implementation case, the periodic metal particle array includes a plurality of metal particles arranged in an array, and the periodic metal particle array satisfies the following relationships: p-d≦40nm, 40nm≦p≦200nm, 20nm≦ d≦200nm, where p is the periodic distance between the centers of any two adjacent metal particles, and d is the diameter of each metal particle.
本发明实施例还提供了前述的等离激元增强型深紫外探测器的制作方法，其包括：Embodiments of the present invention also provide the aforementioned method for fabricating a plasmon-enhanced deep-ultraviolet detector, which includes:
在衬底表面形成缓冲层；forming a buffer layer on the surface of the substrate;
在所述缓冲层表面形成异质结；forming a heterojunction on the surface of the buffer layer;
在所述异质结表面形成插齿电极；以及forming a pinched electrode on the surface of the heterojunction; and
在所述插齿电极之间形成周期性金属颗粒阵列。A periodic array of metal particles is formed between the tooth-shaping electrodes.
较之现有技术，本发明的优点包括：Compared with the prior art, the advantages of the present invention include:
1)本发明提供一种周期性金属颗粒阵列与AlxGa1-xN/GaN异质结构结合的双波长响应的深紫外探测器，其中，周期性金属颗粒阵列能够在电磁波的激发下产生一定波长的衍射耦合共振模式，这种共振模式能够通过调节金属颗粒阵列周期获得共振波长的蓝移，来实现向短波长移动，实现金属颗粒等离激元的深紫外双波长的光场增强(即近场局域增强)，进而改善探测器探测性能。1) The present invention provides a dual-wavelength response deep ultraviolet detector combining a periodic metal particle array with an Al x Ga 1-x N/GaN heterostructure, wherein the periodic metal particle array can be generated under the excitation of electromagnetic waves Diffraction coupling resonance mode of a certain wavelength, this resonance mode can obtain the blue shift of the resonance wavelength by adjusting the period of the metal particle array, so as to realize the shift to the short wavelength, and realize the optical field enhancement of the deep ultraviolet dual-wavelength of the metal particle plasmon ( That is, near-field local enhancement), thereby improving the detection performance of the detector.
2)本发明利用金属颗粒所产生的局域等离激元和颗粒阵列所产生的等离激元周期性衍射共振模式，将两种紫外波段的入射光耦合到金属颗粒阵列，金属颗粒阵列能够有效地实现双波长的紫外等离激元的激发，进而实现探测器表面两种紫外波段的光场增强，提高探测器材料对入射光的吸收率，最终改善并提高深紫外探测器两种波长的光响应度。2) The present invention utilizes the localized plasmon generated by the metal particles and the periodic diffraction resonance mode of the plasmon generated by the particle array to couple the incident light of the two ultraviolet wavebands to the metal particle array, and the metal particle array can Effectively realize the excitation of dual-wavelength ultraviolet plasmons, and then realize the optical field enhancement of the two ultraviolet wavelength bands on the surface of the detector, improve the absorption rate of the detector material to the incident light, and finally improve and improve the two wavelengths of the deep ultraviolet detector. of light responsivity.
3)本发明通过调节金属颗粒的周期和尺寸能够实现等离激元共振和镓氮/铝镓氮探测器探测波长的耦合。3) The present invention can realize the coupling of the plasmon resonance and the detection wavelength of the gallium nitride/aluminum gallium nitride detector by adjusting the period and size of the metal particles.
附图说明Description of drawings
图1是本发明一典型实施例中一种等离激元增强型深紫外探测器的结构示意图。FIG. 1 is a schematic structural diagram of a plasmon-enhanced deep ultraviolet detector in a typical embodiment of the present invention.
图2是本发明一典型实施例中一种等离激元增强型深紫外探测器的制作工艺流程图。FIG. 2 is a flow chart of a manufacturing process of a plasmon-enhanced deep ultraviolet detector in a typical embodiment of the present invention.
图3a和图3b是本发明一典型实施例中一种等离激元增强型深紫外探测器中对周期性金属颗粒阵列的吸收、散射、透射曲线及光照下的电磁场场分布的仿真模拟示意图。3a and 3b are schematic diagrams of simulation simulation of the absorption, scattering and transmission curves of periodic metal particle arrays and the electromagnetic field distribution under illumination in a plasmon-enhanced deep ultraviolet detector according to a typical embodiment of the present invention .
图4是本发明一典型实施例中一种等离激元增强型深紫外探测器中光特征曲线随金属颗粒阵列周期性变化的仿真模拟示意图。FIG. 4 is a schematic diagram of simulation simulation of the periodic change of the light characteristic curve of a plasmon-enhanced deep ultraviolet detector with the metal particle array in a typical embodiment of the present invention.
附图标记说明：001-衬底，002-缓冲层，003-GaN、004-AlxGa1-xN，005-插齿电极，006-周期性金属颗粒阵列。Description of reference numerals: 001-substrate, 002-buffer layer, 003-GaN, 004-AlxGa1 -xN , 005-gear-shaped electrode, 006-periodic metal particle array.
具体实施方式Detailed ways
鉴于现有技术中的不足，本案发明人经长期研究和大量实践，得以提出本发明的技术方案。如下将对该技术方案、其实施过程及原理等作进一步的解释说明。但是，应当理解，在本发明范围内，本发明的各技术特征和在下文(如实施例)中具体描述的各技术特征之间都可以互相组合，从而构成新的或优选的技术方案。限于篇幅，在此不再一一累述。In view of the deficiencies in the prior art, the inventor of the present application was able to propose the technical solution of the present invention after long-term research and extensive practice. The technical solution, its implementation process and principle will be further explained as follows. However, it should be understood that, within the scope of the present invention, each technical feature of the present invention and each technical feature specifically described in the following (eg, embodiments) can be combined with each other, thereby constituting a new or preferred technical solution. Due to space limitations, it is not repeated here.
本发明实施例的一个方面提供了一种等离激元增强型深紫外探测器，其包括包括异质结、插齿电极及周期性金属颗粒阵列，所述插齿电极形成于所述异质结上，所述周期性金属颗粒阵列形成于所述插齿电极之间。An aspect of the embodiments of the present invention provides a plasmon-enhanced deep ultraviolet detector, which includes a heterojunction, a tooth-shaping electrode, and a periodic metal particle array, and the tooth-shaping electrode is formed on the heterojunction. On the junction, the periodic metal particle array is formed between the tooth-shaped electrodes.
在一较为具体的实施案例中，所述等离激元增强型深紫外探测器还包括缓冲层，所述异质结形成在缓冲层上。In a specific implementation case, the plasmon-enhanced deep ultraviolet detector further includes a buffer layer, and the heterojunction is formed on the buffer layer.
在一较为具体的实施案例中，所述异质结包括AlxGa1-xN/GaN异质结和/或GaO/GaN异质结，其中，0.1≦X≦0.3。In a more specific implementation case, the heterojunction includes an AlxGa1 - xN /GaN heterojunction and/or a GaO/GaN heterojunction, wherein 0.1≦X≦0.3.
优选的，所述异质结包括沿在缓冲层上依次形成的GaN层和AlxGa1-xN层，其中，0.1≦X≦0.3。其中GaN的带隙波长接近370纳米，而AlGaN材料的带隙波长接近320纳米。Preferably, the heterojunction includes a GaN layer and an AlxGa1 -xN layer formed on the buffer layer in sequence, wherein 0.1≦X≦0.3. The band gap wavelength of GaN is close to 370 nanometers, while the band gap wavelength of AlGaN material is close to 320 nanometers.
在一较为具体的实施案例中，所述周期性金属颗粒阵列包括阵列排布的复数个金属颗粒，且所述周期性金属颗粒阵列满足以下关系：p-d≦40nm，40nm≦p≦200nm，20nm≦d≦200nm，其中，p为任意相邻两个金属颗粒的中心之间的周期距离，d为每个金属颗粒的直径。In a more specific implementation case, the periodic metal particle array includes a plurality of metal particles arranged in an array, and the periodic metal particle array satisfies the following relationships: p-d≦40nm, 40nm≦p≦200nm, 20nm≦ d≦200nm, where p is the periodic distance between the centers of any two adjacent metal particles, and d is the diameter of each metal particle.
本发明中的金属颗粒周期阵列能够在电磁波的激发下产生一定波长的衍射耦合共振模式，这种共振模式能够通过调节金属颗粒周期来实现向短波长移动，实现金属颗粒等离激元的深紫外双波长的近场局域增强，能够有效地实现双波长的紫外等离激元的激发，进而改善探测器探测性能。The periodic array of metal particles in the present invention can generate a diffraction coupling resonance mode of a certain wavelength under the excitation of electromagnetic waves, and this resonance mode can be shifted to a short wavelength by adjusting the period of the metal particles, and the deep ultraviolet of the plasmon of the metal particles can be realized. The dual-wavelength near-field local enhancement can effectively realize the excitation of dual-wavelength ultraviolet plasmons, thereby improving the detection performance of the detector.
进一步的，所述金属颗粒的材质包括铝、银、锌和镓等中的任意一种或两种以上的组合，优选为金属铝颗粒，但不限于此。Further, the material of the metal particles includes any one or a combination of two or more of aluminum, silver, zinc, gallium, etc., preferably metal aluminum particles, but not limited thereto.
进一步的，所述金属颗粒的形状包括球状、柱状、棱锥和多面体等中的任意一种或两种以上的组合，优选为柱状，但不限于此。Further, the shape of the metal particles includes any one or a combination of two or more of spherical, columnar, pyramid, and polyhedron, and is preferably columnar, but not limited thereto.
在一较为具体的实施案例中，所述缓冲层设置于衬底表面。In a more specific implementation case, the buffer layer is disposed on the surface of the substrate.
进一步的，所述缓冲层的材质可以选自但不限于氮化铝、氮化镓和AlGaN中的任意一种Further, the material of the buffer layer can be selected from but not limited to any one of aluminum nitride, gallium nitride and AlGaN
进一步的，所述衬底的材质可以选自但不限于硅、蓝宝石、氮化镓和玻璃中的任意一种。Further, the material of the substrate can be selected from but not limited to any one of silicon, sapphire, gallium nitride and glass.
在一较为具体的实施案例中，所述插齿电极与异质结的接触界面为平面。In a more specific implementation case, the contact interface between the tooth-shaped electrode and the heterojunction is a plane.
进一步的，所述插齿电极与异质结之间形成肖特基接触。Further, a Schottky contact is formed between the pinion electrode and the heterojunction.
进一步的，所述插齿电极可以选自但不包括镍/金电极、铂/金电极等，优选为镍/金电极。Further, the pinion electrode can be selected from but not including nickel/gold electrodes, platinum/gold electrodes, etc., preferably nickel/gold electrodes.
进一步的，所述等离激元增强型深紫外探测器的材料体系为AlGaN/GaN体系。Further, the material system of the plasmon-enhanced deep ultraviolet detector is an AlGaN/GaN system.
本发明实施例的另一个方面提供了一种等离激元增强型深紫外探测器的制作方法，其包括：Another aspect of the embodiments of the present invention provides a method for fabricating a plasmon-enhanced deep ultraviolet detector, which includes:
在衬底表面形成缓冲层；forming a buffer layer on the surface of the substrate;
在所述缓冲层表面形成异质结；forming a heterojunction on the surface of the buffer layer;
在所述异质结表面形成插齿电极；以及forming a pinched electrode on the surface of the heterojunction; and
在所述插齿电极之间形成周期性金属颗粒阵列。A periodic array of metal particles is formed between the tooth-shaping electrodes.
进一步的，所述制作方法包括：至少以电子束蒸发、热蒸发、磁控溅射镀膜中的任一种方式在所述异质结表面形成插齿电极，并使所述插齿电极与异质结形成肖特基接触，进而形成金属-半导体-金属结构。Further, the manufacturing method includes: forming a tooth-shaped electrode on the surface of the heterojunction by at least any one of electron beam evaporation, thermal evaporation, and magnetron sputtering coating, and making the tooth-shaped electrode and the heterojunction electrode. The mass junction forms Schottky contacts, which in turn form metal-semiconductor-metal structures.
其中，金属-半导体-金属探测器(简称MSM结构)是指半导体表面形成插齿电极后，统称为在半导体表面形成的插齿(金属)-半导体-插齿(金属)的探测器结构。Among them, the metal-semiconductor-metal detector (referred to as MSM structure) refers to the detector structure formed on the semiconductor surface after the tooth-shaping electrode is formed on the semiconductor surface.
具体的，所述插齿电极的制备主要流程依次为涂胶、光刻、显影、金属电极镀膜以及剥离等工艺。Specifically, the main processes for the preparation of the tooth-shaping electrodes are, in sequence, the processes of gluing, photolithography, development, metal electrode coating, and stripping.
进一步的，所述制作方法包括：至少以电子束蒸发方式生长形成周期性金属颗粒阵列。Further, the manufacturing method includes: growing and forming periodic metal particle arrays by at least electron beam evaporation.
优选的，所述周期性金属颗粒阵列满足以下关系：(p-d)≦40nm，40nm≦p≦200nm，20nm≦d≦200nm，其中，p为任意相邻两个金属颗粒的中心之间的周期距离，d为每个金属颗粒的直径。Preferably, the periodic metal particle array satisfies the following relationships: (p-d)≦40nm, 40nm≦p≦200nm, 20nm≦d≦200nm, where p is the periodic distance between the centers of any two adjacent metal particles , d is the diameter of each metal particle.
进一步的，所述异质结包括AlxGa1-xN/GaN异质结、GaO/GaN异质结等，其中，0.1≦X≦0.3。Further, the heterojunction includes AlxGa1 - xN /GaN heterojunction, GaO/GaN heterojunction, etc., wherein 0.1≦X≦0.3.
优选的，所述异质结包括沿在缓冲层上依次形成的GaN层和AlxGa1-xN层，其中，0.1≦X≦0.3。Preferably, the heterojunction includes a GaN layer and an AlxGa1 -xN layer formed on the buffer layer in sequence, wherein 0.1≦X≦0.3.
进一步的，在一较为典型的实施案例中，该制作方法可以包括如下步骤：Further, in a more typical implementation case, the manufacturing method may include the following steps:
(1)在生长好AlGaN/GaN材料的衬底上，清洗，进行阳极氧化铝(AAO)掩模的转移；(1) On the substrate on which the AlGaN/GaN material is grown, clean and transfer the anodic aluminum oxide (AAO) mask;
(2)电子束蒸发生长铝颗粒，高温胶带去除AAO掩模，得到周期性金属颗粒阵列；(2) Electron beam evaporation grows aluminum particles, high temperature tape removes the AAO mask to obtain periodic metal particle arrays;
(3)光刻技术得到插齿电极；(3) Gear-shaping electrodes are obtained by photolithography;
(4)将步骤(3)得到的插齿电极区域进行Al颗粒腐蚀，得到干净的电极与衬底界面；(4) performing Al particle corrosion on the tooth-shaping electrode region obtained in step (3) to obtain a clean electrode and substrate interface;
(5)电子束蒸发生长电极，形成肖特基接触，形成金属-半导体-金属结构；(5) Electron beam evaporation grows the electrode to form a Schottky contact and form a metal-semiconductor-metal structure;
(6)引线到PCB板电极，测试，完成探测器的制备。(6) Lead to the PCB board electrode, test, and complete the preparation of the detector.
藉由上述技术方案，本发明提供一种周期性金属颗粒阵列与AlxGa1-xN/GaN异质结构结合的双波长响应的深紫外探测器，利用金属颗粒所产生的局域等离激元和金属颗粒阵列所产生的等离激元周期性衍射共振模式，将两种紫外波段的入射光耦合到金属纳米结构，来实现探测器表面两种紫外波段的光场增强，提高探测器材料对入射光的吸收率，改善深紫外探测器对两种波长的光响应度；并且通过调节金属颗粒的周期和尺寸能够实现等离激元共振和镓氮/铝镓氮探测器探测波长的耦合。With the above technical solutions, the present invention provides a dual-wavelength response deep ultraviolet detector combining periodic metal particle arrays and Al x Ga 1-x N/GaN heterostructures. The periodic diffraction resonance mode of the plasmon generated by the polariton and the metal particle array couples the incident light in the two ultraviolet wavelength bands to the metal nanostructure to realize the optical field enhancement of the two ultraviolet wavelength bands on the surface of the detector and improve the detector. The absorption rate of the material to incident light improves the photoresponsivity of the deep ultraviolet detector to two wavelengths; and by adjusting the period and size of the metal particles, the plasmon resonance and the detection wavelength of the gallium nitride/aluminum gallium nitride detector can be realized. coupling.
以下结合附图及更为具体的实施例对本发明的技术方案作进一步清楚、完整的解释说明。The technical solutions of the present invention will be further clearly and completely explained below with reference to the accompanying drawings and more specific embodiments.
请参阅图1所示，本实施例所涉及的一种等离激元增强型深紫外探测器。图1中其中X-轴，Y-轴与Z-轴分别代表坐标轴X轴、Y轴与Z轴。该深紫外探测器包括：衬底001，缓冲层002，AlxGa1-xN/GaN异质结003、004，周期性金属颗粒阵列006，插齿电极005。所述镓氮/铝镓氮异质结置于衬底001之上，所述插齿电极005置于镓氮/铝镓氮异质结004之上，所述周期性金属颗粒阵列006置于插齿电极005之间。Please refer to FIG. 1 , a plasmon-enhanced deep ultraviolet detector involved in this embodiment. In Figure 1, the X-axis, Y-axis and Z-axis represent the coordinate axes X-axis, Y-axis and Z-axis respectively. The deep ultraviolet detector includes: a substrate 001 , a buffer layer 002 , Al x Ga 1-x N/GaN heterojunctions 003 and 004 , a periodic metal particle array 006 , and a tooth-shaping electrode 005 . The gallium nitride/aluminum gallium nitride heterojunction is placed on the substrate 001, the pinion electrode 005 is placed on the gallium nitride/aluminum gallium nitride heterojunction 004, and the periodic metal particle array 006 is placed on the between the tooth-shaping electrodes 005.
本发明实施例中，在所述AlxGa1-xN/GaN异质结中，0.1≦X≦0.3。在本发明的一个更为具体的实施例中，X大约为0.23，对应AlxGa1-xN材料是Al0.23Ga0.73N。其中GaN的带隙波长接近370纳米，而AlGaN材料的带隙波长接近320纳米。In the embodiment of the present invention, in the Al x Ga 1-x N/GaN heterojunction, 0.1≦X≦0.3. In a more specific embodiment of the present invention, X is about 0.23 , and the corresponding AlxGa1 - xN material is Al0.23Ga0.73N . The band gap wavelength of GaN is close to 370 nanometers, while the band gap wavelength of AlGaN material is close to 320 nanometers.
在本发明的一个更为具体的实施例中，X大约为0.1，对应AlxGa1-xN材料是Al0.1Ga0.9N。In a more specific embodiment of the present invention, X is about 0.1 , and the corresponding AlxGa1 - xN material is Al0.1Ga0.9N .
在本发明的一个更为具体的实施例中，X大约为0.3，对应AlxGa1-xN材料是Al0.3Ga0.7N。In a more specific embodiment of the present invention, X is about 0.3 , and the corresponding AlxGa1 - xN material is Al0.3Ga0.7N .
本发明实施例中，金属颗粒为铝、镓、银中的任意一种。在本发明的一个更为具体的实施例中选择金属铝颗粒。本发明实施例中，所述金属颗粒的形状可为球状、柱状、棱锥、多面体中的任意一种。在本发明的一个更为具体的实施例中选用柱状。本发明实施例中，所述周期性金属颗粒阵列的关系为p-d≦40nm，40nm≦p≦200nm，20≦d≦200nm。在本发明的一个更为具体的实施例中p＝125nm，d＝95nm，p-d＝30nm。在本发明的一个更为具体的实施例中p＝40nm，d＝20nm，p-d＝20nm。在本发明的一个更为具体的实施例中p＝200nm，d＝160nm，p-d＝40nm。在本发明的一个更为具体的实施例中p＝200nm，d＝200nm，p-d＝0nm。In the embodiment of the present invention, the metal particles are any one of aluminum, gallium, and silver. In a more specific embodiment of the present invention, metallic aluminum particles are selected. In the embodiment of the present invention, the shape of the metal particles may be any one of sphere, column, pyramid, and polyhedron. A columnar shape is chosen in a more specific embodiment of the present invention. In the embodiment of the present invention, the relationship of the periodic metal particle array is p-d≦40nm, 40nm≦p≦200nm, and 20≦d≦200nm. In a more specific embodiment of the present invention, p=125 nm, d=95 nm, and p-d=30 nm. In a more specific embodiment of the present invention, p=40 nm, d=20 nm, and p-d=20 nm. In a more specific embodiment of the present invention, p=200 nm, d=160 nm, and p-d=40 nm. In a more specific embodiment of the present invention, p=200 nm, d=200 nm, and p-d=0 nm.
如图2所示，本发明实施例中一种等离激元增强型深紫外探测器的制备工艺流程具体步骤如下：As shown in FIG. 2 , the specific steps of the preparation process of a plasmon-enhanced deep ultraviolet detector in the embodiment of the present invention are as follows:
步骤一：在生长好AlGaN/GaN材料的衬底上，清洗，进行阳极氧化铝(AAO)掩模的转移；Step 1: On the substrate on which the AlGaN/GaN material is grown, cleaning is performed, and an anodic aluminum oxide (AAO) mask is transferred;
步骤二：电子束蒸发生长铝颗粒，高温胶带去除AAO掩模，得到周期结构的Al颗粒；Step 2: growing aluminum particles by electron beam evaporation, removing the AAO mask with high-temperature adhesive tape, and obtaining Al particles with periodic structure;
步骤三：光刻技术得到插齿电极；Step 3: The gear-shaping electrode is obtained by photolithography;
步骤四：将步骤三得到的插齿电极区域进行Al颗粒腐蚀，得到干净的电极与衬底界面；Step 4: perform Al particle corrosion on the tooth-shaping electrode region obtained in Step 3 to obtain a clean interface between the electrode and the substrate;
步骤五：电子束蒸发生长电极，形成肖特基接触，形成金属-半导体-金属结构；Step 5: Electron beam evaporation grows the electrode to form a Schottky contact to form a metal-semiconductor-metal structure;
步骤六：引线到PCB板电极，测试，完成探测器的制备。Step 6: Lead to the PCB board electrode, test, and complete the preparation of the detector.
本发明中需电极-异质结形成肖特基接触，可选镍/金，铂/金电极，本实施例选用金属插齿电极为Ni/Au，电极宽度及间距约为10μm，电极的区域面积大约为1000μm。In the present invention, electrode-heterojunction is required to form Schottky contact, and nickel/gold and platinum/gold electrodes can be selected. In this embodiment, the metal tooth-shaped electrode is selected as Ni/Au, and the electrode width and spacing are about 10 μm. The area is about 1000 μm.
图3a所示为本发明又一实施例P＝150nm，d＝130nm的周期性金属Al颗粒阵列的吸收、散射及透射曲线仿真模拟，吸收曲线相对于散射和透射曲线有两个峰值，峰位Ⅰ为Al颗粒的局域等离激元共振波长，其波长在260～320nm范围内，峰位Ⅲ为金属颗粒阵列的周期性衍射峰，其波长在330～370nm范围。图3b分别为三种模式下光照作用下，局域电磁场的分布图，可以看出三种模式下Ⅰ、Ⅲ的局域增强场分布在颗粒的两侧。Figure 3a shows the simulation simulation of the absorption, scattering and transmission curves of the periodic metal Al particle array with P=150nm and d=130nm according to another embodiment of the present invention. Compared with the scattering and transmission curves, the absorption curve has two peaks. I is the local plasmon resonance wavelength of Al particles, and its wavelength is in the range of 260-320 nm, and peak position III is the periodic diffraction peak of the metal particle array, and its wavelength is in the range of 330-370 nm. Figure 3b is the distribution diagram of the local electromagnetic field under the action of illumination in the three modes, and it can be seen that the local enhancement fields of I and III in the three modes are distributed on both sides of the particle.
图4示出了本实施例中提供的一种等离激元增强型深紫外探测器中随周期性变化的金属颗粒阵列的共振响应波长仿真模拟，本实施例中选用了分别为周期p(220,200,180,160,140,120)nm，d(200,180,160,140,120,100)nm的六组Al颗粒周期阵列，从模拟曲线可以看出，探测器对应于两个共振响应峰，Al颗粒的局域等离效应对应约300nm的峰位随周期变化范围小，周期性金属颗粒阵列的响应峰对应波长在约360nm，可以看出随着周期从220-120nm的增大，响应峰位从530-310nm移动，发生蓝移。由此可见，通过周期性金属颗粒阵列与镓氮/铝镓氮的异质结结合，可以实现金属颗粒阵列的紫外双波长等离激元共振，匹配GaN和AlGaN带隙波长，实现GaN/AlGaN紫外探测器的双波长的增强探测。FIG. 4 shows the simulation simulation of the resonance response wavelength of the metal particle array in a plasmon-enhanced deep ultraviolet detector provided in this embodiment, which changes with the periodicity. In this embodiment, the period p ( Six groups of periodic arrays of Al particles at 220, 200, 180, 160, 140, 120) nm, d (200, 180, 160, 140, 120, 100) nm, it can be seen from the simulation curve that the detector corresponds to two resonance response peaks, and the local plasmon effect of Al particles corresponds to a peak position of about 300 nm with the period The variation range is small, and the corresponding wavelength of the response peak of the periodic metal particle array is about 360nm. It can be seen that as the period increases from 220-120nm, the response peak moves from 530-310nm, and a blue shift occurs. It can be seen that by combining the periodic metal particle array with the gallium nitride/aluminum gallium nitride heterojunction, the ultraviolet dual-wavelength plasmon resonance of the metal particle array can be realized, matching the band gap wavelength of GaN and AlGaN, and realizing GaN/AlGaN Enhanced detection of dual wavelengths by UV detectors.
通过上述实施例可以发现，本发明提供的周期性金属颗粒阵列与AlxGa1-xN/GaN异质结构结合的双波长响应的深紫外探测器，利用金属颗粒所产生的局域等离激元和金属颗粒阵列所产生的等离激元周期性衍射共振模式，将两种紫外波段的入射光耦合到金属纳米结构，来实现探测器表面两种紫外波段的光场增强，提高探测器材料对入射光的吸收率，改善深紫外探测器对两种波长的光响应度；并且通过调节金属颗粒的周期和尺寸能够实现等离激元共振和镓氮/铝镓氮探测器探测波长的耦合。Through the above embodiments, it can be found that the dual-wavelength response deep ultraviolet detector provided by the present invention, which combines the periodic metal particle array with the Al x Ga 1-x N/GaN heterostructure, utilizes the localized plasmon generated by the metal particles. The periodic diffraction resonance mode of the plasmon generated by the polariton and the metal particle array couples the incident light in the two ultraviolet wavelength bands to the metal nanostructure to realize the optical field enhancement of the two ultraviolet wavelength bands on the surface of the detector and improve the detector. The absorption rate of the material to incident light improves the photoresponsivity of the deep ultraviolet detector to two wavelengths; and by adjusting the period and size of the metal particles, the plasmon resonance and the detection wavelength of the gallium nitride/aluminum gallium nitride detector can be realized. coupling.
此外，本案发明人还参照上述实施例的方式，以本说明书中列出的其它原料和条件等进行了试验，所获等离激元增强型深紫外探测器亦具有较为理想的性能，即同样制得了具有优异的探测性能、实现等离激元共振和镓氮/铝镓氮探测器探测波长的耦合的等离激元增强型深紫外探测器。In addition, the inventors of the present application also conducted experiments with other raw materials and conditions listed in this specification with reference to the above-mentioned embodiments, and the obtained plasmon-enhanced deep-ultraviolet detector also has relatively ideal performance, that is, the same A plasmon-enhanced deep-ultraviolet detector with excellent detection performance, realizing the coupling of plasmon resonance and the detection wavelength of the gallium nitride/aluminum gallium nitride detector was prepared.
需要说明的是，在本说明书中术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个…”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。It should be noted that the terms "comprising", "comprising" or any other variation thereof in this specification are intended to encompass non-exclusive inclusion, such that a process, method, article or device comprising a series of elements includes not only those elements, It also includes other elements not expressly listed or inherent to such a process, method, article or apparatus. Without further limitation, an element qualified by the phrase "comprising a..." does not preclude the presence of additional identical elements in a process, method, article or apparatus that includes the element.
应当理解，以上较佳实施例仅用于说明本发明的内容，除此之外，本发明还有其他实施方式，但凡本领域技术人员因本发明所涉及之技术启示，而采用等同替换或等效变形方式形成的技术方案均落在本发明的保护范围内。It should be understood that the above preferred embodiments are only used to illustrate the content of the present invention. In addition, the present invention also has other embodiments. However, those skilled in the art use equivalent replacements or equivalents due to the technical inspiration involved in the present invention. The technical solutions formed by the effective deformation method all fall within the protection scope of the present invention.
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