CN111129225A - Ultraviolet photoelectric detector and preparation method thereof - Google Patents
Ultraviolet photoelectric detector and preparation method thereof Download PDFInfo
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Abstract
The invention provides an ultraviolet photoelectric detector and a preparation method thereof, wherein the ultraviolet photoelectric detector comprises: a substrate layer; a photosensitive layer disposed on the substrate layer; the nano aluminum array layer is arranged on the photosensitive layer and covers partial area of the photosensitive layer; wherein, nanometer aluminium array layer includes: the nano aluminum blocks are arranged on the photosensitive layer in a rectangular array mode; and/or a plurality of aluminum nanoparticles disposed on the photosensitive layer in a rectangular array. According to the ultraviolet photoelectric detector provided by the invention, the nano aluminum array layer can enhance the absorption of the photosensitive layer on the detection wavelength by utilizing the plasma resonance effect of the nano aluminum structure through the aluminum nano particles and/or the nano aluminum blocks arranged in the array. The plasma resonance peak of the nano aluminum can achieve the combined action of an ultraviolet region and the photosensitive layer, the responsivity of the ultraviolet photoelectric detector is improved, and the detection performance of the ultraviolet photoelectric detector is improved under the condition of deep ultraviolet light.
Description
Technical Field
The invention relates to the field of semiconductor devices, in particular to an ultraviolet photoelectric detector and a preparation method thereof.
Background
The ultraviolet photoelectric detector has wide and important application in the fields of ultraviolet communication, missile early warning and tracking, fire early warning, environment monitoring and the like. The conventional ultraviolet photodetector mainly comprises a photomultiplier tube and a silicon-based ultraviolet detector. The former has large volume, easy damage, low efficiency and high power consumption, and the ultraviolet detector based on the narrow band gap semiconductor materials such as Si has low reliability and poor radiation resistance. In addition, a series of expensive optical filters are adopted, so that the production cost is high.
With the development of nanotechnology, optoelectronic devices based on two-dimensional materials have the unique advantages of small volume, low power consumption, long service life, good flexibility, easy integration and the like. However, the photoelectric device of the existing two-dimensional material has low light absorptivity, and the ultraviolet photoelectric detector prepared based on the two-dimensional material has low responsivity.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art.
To this end, a first aspect of the invention provides an ultraviolet photodetector.
The invention provides a method for manufacturing an ultraviolet photoelectric detector in a second aspect.
In view of this, according to a first aspect of the present invention, there is provided an ultraviolet photodetector, comprising: a substrate layer; a photosensitive layer disposed on the substrate layer; the nano aluminum array layer is arranged on the photosensitive layer and covers partial area of the photosensitive layer; wherein, nanometer aluminium array layer includes: the nano aluminum blocks are arranged on the photosensitive layer in a rectangular array mode; and/or a plurality of aluminum nanoparticles disposed on the photosensitive layer in a rectangular array.
In the ultraviolet photoelectric detector provided by the invention, in the working process, the absorptivity of ultraviolet light of the photosensitive layer is improved through the nano aluminum array layer, and the photosensitive layer can convert optical radiation signals into electrical signals by absorbing the ultraviolet light.
According to the ultraviolet photoelectric detector, the photosensitive layer and the nano aluminum array layer are supported by the substrate layer, and the photosensitive layer and the nano aluminum array layer are conveniently formed and prepared; absorbing ultraviolet light through the photosensitive layer, converting an optical radiation signal into an electrical signal and realizing an ultraviolet photoelectric detection function; the absorptivity of the ultraviolet light of the photosensitive layer is improved through the nano aluminum array layer, and therefore the responsivity of the ultraviolet photoelectric detector is improved.
According to the ultraviolet photoelectric detector provided by the invention, the nano aluminum array layer can enhance the absorption of the photosensitive layer on the detection wavelength by utilizing the plasma resonance effect of the nano aluminum structure through the aluminum nano particles and/or the nano aluminum blocks arranged in the array. The plasma resonance peak of the nano aluminum can achieve the combined action of an ultraviolet region and the photosensitive layer, the responsivity of the ultraviolet photoelectric detector is improved, and the detection performance of the ultraviolet photoelectric detector is improved under the condition of deep ultraviolet light.
In addition, according to the ultraviolet photodetector in the above technical solution provided by the present invention, the following additional technical features may also be provided:
in the above technical solution, further, the cross section of the nano aluminum block is square, the side length of the square is 30nm to 50nm, and the thickness of the nano aluminum block is 60nm to 80 nm.
In this technical scheme, the structure and the size of nanometer aluminium piece are further provided, through the selection of this size, can make the crest of vibration of nanometer aluminium array layer ion body resonance appear in the absorption region on photosensitive layer, further strengthen the absorption of photosensitive layer to light, can further improve ultraviolet photoelectric detector's responsiveness.
In any of the above technical solutions, further, the array pitch of the rectangular array of the plurality of nano aluminum blocks is 150nm to 250 nm.
In this technical scheme, the array interval of nanometer aluminium pig rectangular array is further provided, can make the crest of vibration of nanometer aluminium array layer ion body resonance appear in the absorption region on photosensitive layer, further strengthens the absorption of photosensitive layer to light, can further improve ultraviolet photoelectric detector's responsiveness.
In any of the above technical solutions, further, the photosensitive layer includes: at least one hexagonal boron nitride layer.
In the technical scheme, the material selection and the hierarchical structure of the photosensitive layer are further provided, the hexagonal boron nitride is stable in chemical structure, high in heat conductivity and high in band gap (-5.9 eV), and only has absorption (<215nm) on deep ultraviolet light wave bands, and the sensitivity of the photosensitive layer can be improved and the visible light interference resistance of the photosensitive layer can be improved by arranging the hexagonal boron nitride layer on at least one layer.
In any of the above solutions, further, the substrate layer includes: a P-type single crystal silicon layer; a silicon dioxide layer disposed on the P-type single crystal silicon layer; the thickness of the silicon dioxide layer is 280nm to 300 nm; wherein the photosensitive layer is disposed on the silicon dioxide layer.
In the technical scheme, the structure of the substrate layer is further provided, the substrate layer comprises a P-type monocrystalline silicon layer and a silicon dioxide layer, the insulating effect of the photosensitive layer can be ensured by selecting the materials and the thickness of the silicon dioxide layer, the silicon dioxide layer can be prepared in a deposition or oxidation mode, the process cost is further reduced, and meanwhile, the grid voltage can be provided through the P-type monocrystalline silicon layer, so that the regulation and control performance of a detection signal is improved.
In any of the above technical solutions, further, the ultraviolet photodetector further includes: and the electrode layers are arranged at two ends of the photosensitive layer.
In the technical scheme, the ultraviolet photoelectric detector is further provided with electrode layers at two ends of the photosensitive layer and used as a source electrode and a drain electrode of the ultraviolet photoelectric detector.
In any of the above technical solutions, the electrode layer further includes a titanium layer and a gold layer, the thickness of the titanium layer is 3nm to 8nm, and the thickness of the gold layer is 70nm to 80 nm.
In the technical scheme, the material selection and the thickness of the electrode layer are further provided, and the thickness is further determined through the selection of the titanium layer and the gold layer, so that the electrode layer has good conductivity, and the performance of the ultraviolet photoelectric detector is further improved.
According to a second aspect of the present invention, there is provided a method for manufacturing an ultraviolet photodetector according to any one of the above technical solutions, including: forming a photosensitive layer on the substrate layer; and depositing a metal aluminum layer on the photosensitive layer through a thermal evaporation process, and stripping part of the metal aluminum layer to expose the photosensitive layer so as to obtain the nano aluminum array layer.
In the technical scheme, the ultraviolet photoelectric detector in any technical scheme is prepared by the preparation method, so that the preparation method has all the beneficial technical effects of the ultraviolet photoelectric detector.
According to the technical scheme, the metal aluminum material with the aluminum nano structure can be formed on the photosensitive layer through the thermal evaporation process, the nano aluminum array layer with the expected shape and pattern can be obtained by stripping part of the metal aluminum material, and the production process is simple, easy to implement and low in production cost.
In addition, according to the preparation method in the above technical scheme provided by the invention, the following additional technical features can be provided:
in the above technical solution, further, the forming of the photosensitive layer on the substrate layer includes: preparing at least one hexagonal boron nitride layer on the copper foil by chemical vapor deposition; coating a polymethacrylate layer on the hexagonal boron nitride layer and the copper foil; corroding the copper foil by ferric trichloride; transferring the hexagonal boron nitride layer and the polymethacrylate layer to the substrate layer; the polymethacrylate layer was washed off by acetone.
In the technical scheme, the step of forming the photosensitive layer is further provided, at least one layer of hexagonal boron nitride layer is formed on the copper foil, then the at least one layer of hexagonal boron nitride layer is transferred to the substrate layer, the photosensitive layer can be prepared through one-time transfer, the preparation process is simple, and batch preparation is facilitated.
In any of the above technical solutions, further, the method for manufacturing an ultraviolet photodetector further includes: photoetching electrode patterns on the substrate layer and the photosensitive layer; depositing an electrode metal layer on the electrode pattern; and stripping part of the electrode metal layer to obtain the electrode layer.
In the technical scheme, the preparation steps of the electrode layer are further disclosed, the preparation process is simple, and batch preparation is facilitated.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic structural view of an ultraviolet photodetector according to an embodiment of the present invention;
fig. 2 is a flow chart of a method of making an ultraviolet photodetector according to one embodiment of the present invention;
fig. 3 is a flow chart of a method of making an ultraviolet photodetector according to another embodiment of the present invention;
fig. 4 is a flow chart of a method of manufacturing an ultraviolet photodetector according to another embodiment of the present invention.
Wherein, the corresponding relation between the reference numbers and the part names in fig. 1 is:
2 substrate layers, 4 photosensitive layers, 6 nanometer aluminum array layers and 8 electrode layers.
Detailed Description
In order that the above objects, features and advantages of the present invention can be more clearly understood, a more particular description of the invention will be rendered by reference to the appended drawings. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced otherwise than as specifically described herein, and thus the scope of the present invention is not limited by the specific embodiments disclosed below.
Ultraviolet photodetectors and methods of making ultraviolet photodetectors provided according to some embodiments of the present invention are described below with reference to fig. 1-4.
Example one
As shown in fig. 1, one embodiment of the present invention provides an ultraviolet photodetector including: a substrate layer 2, a photosensitive layer 4 and a nano-aluminum array layer 6.
Wherein the photosensitive layer 4 is arranged on the substrate layer 2; the nano aluminum array layer 6 is arranged on the photosensitive layer 4 and covers partial area of the photosensitive layer 4.
Wherein, nanometer aluminium array layer 6 includes: a plurality of nano aluminum blocks arranged on the photosensitive layer 4 in a rectangular array; and/or a plurality of aluminum nanoparticles disposed in a rectangular array on the photosensitive layer 4.
In the ultraviolet photoelectric detector provided by the invention, in the working process, the absorptivity of ultraviolet light of the photosensitive layer 4 is improved through the nano aluminum array layer 6, and the photosensitive layer 4 can convert optical radiation signals into electrical signals by absorbing the ultraviolet light.
According to the ultraviolet photoelectric detector, the substrate layer 2 is arranged to support the photosensitive layer 4 and the nano aluminum array layer 6, and the photosensitive layer 4 and the nano aluminum array layer 6 can be conveniently molded and prepared; the photosensitive layer 4 absorbs ultraviolet light, and optical radiation signals are converted into electrical signals to realize the ultraviolet photoelectric detection function; the absorptivity of the ultraviolet light of the photosensitive layer 4 is improved through the nano aluminum array layer 6, and therefore the responsivity of the ultraviolet photoelectric detector is improved.
According to the ultraviolet photoelectric detector provided by the invention, the nano aluminum array layer 6 can enhance the absorption of the photosensitive layer 4 to the detection wavelength by utilizing the plasma resonance effect of the nano aluminum structure through the aluminum nano particles and/or the nano aluminum blocks arranged in the array. The plasma resonance peak of the nano aluminum can achieve the combined action of an ultraviolet region and the photosensitive layer 4, the responsivity of the ultraviolet photoelectric detector is improved, and the detection performance of the ultraviolet photoelectric detector is improved under the condition of deep ultraviolet light.
Example two
As shown in fig. 1, one embodiment of the present invention provides an ultraviolet photodetector including: a substrate layer 2, a photosensitive layer 4 and a nano-aluminum array layer 6.
Wherein the photosensitive layer 4 is arranged on the substrate layer 2; the nano aluminum array layer 6 is arranged on the photosensitive layer 4 and covers partial area of the photosensitive layer 4.
Wherein, nanometer aluminium array layer 6 includes: a plurality of nano aluminum blocks arranged on the photosensitive layer 4 in a rectangular array; and/or a plurality of aluminum nanoparticles disposed in a rectangular array on the photosensitive layer 4.
Furthermore, the cross section of the nano aluminum block is square, the side length of the square is 30nm to 50nm, and the thickness of the nano aluminum block is 60nm to 80 nm.
In this embodiment, the structure and the size of the nano aluminum block are further provided, and through the selection of the size, the oscillation peak of the nano aluminum array layer 6 plasma resonance can appear in the absorption region of the photosensitive layer 4, so that the absorption of the photosensitive layer 4 to light is further enhanced, and the responsivity of the ultraviolet photodetector can be further improved.
Further, the array pitch of the rectangular array of the plurality of nano aluminum blocks is 150nm to 250 nm.
In this embodiment, an array pitch of the rectangular array of the nano aluminum blocks is further provided, so that a vibration peak of plasma resonance of the nano aluminum array layer 6 can appear in an absorption region of the photosensitive layer 4, absorption of light by the photosensitive layer 4 is further enhanced, and responsivity of the ultraviolet photodetector can be further improved.
EXAMPLE III
As shown in fig. 1, one embodiment of the present invention provides an ultraviolet photodetector including: a substrate layer 2, a photosensitive layer 4 and a nano-aluminum array layer 6.
Wherein the photosensitive layer 4 is arranged on the substrate layer 2; the nano aluminum array layer 6 is arranged on the photosensitive layer 4 and covers partial area of the photosensitive layer 4.
Wherein, nanometer aluminium array layer 6 includes: a plurality of nano aluminum blocks arranged on the photosensitive layer 4 in a rectangular array; and/or a plurality of aluminum nanoparticles disposed in a rectangular array on the photosensitive layer 4.
Further, the photosensitive layer 4 includes: at least one hexagonal boron nitride layer.
In this embodiment, a material selection and a hierarchical structure of the photosensitive layer 4 are further provided, the hexagonal boron nitride has a stable chemical structure, a high thermal conductivity, a high band gap (-5.9 eV), and absorption (<215nm) only for a deep ultraviolet band, and by arranging at least one hexagonal boron nitride layer, the sensitivity of the photosensitive layer 4 can be improved, and the visible light interference resistance of the photosensitive layer 4 can be improved.
Example four
As shown in fig. 1, one embodiment of the present invention provides an ultraviolet photodetector including: a substrate layer 2, a photosensitive layer 4 and a nano-aluminum array layer 6.
Wherein the photosensitive layer 4 is arranged on the substrate layer 2; the nano aluminum array layer 6 is arranged on the photosensitive layer 4 and covers partial area of the photosensitive layer 4.
Wherein, nanometer aluminium array layer 6 includes: a plurality of nano aluminum blocks arranged on the photosensitive layer 4 in a rectangular array; and/or a plurality of aluminum nanoparticles disposed in a rectangular array on the photosensitive layer 4.
Further, the substrate layer 2 comprises: a P-type single crystal silicon layer; a silicon dioxide layer disposed on the P-type single crystal silicon layer; the thickness of the silicon dioxide layer is 280nm to 300 nm; wherein the photosensitive layer 4 is provided on a silicon dioxide layer.
In the embodiment, the structure of the substrate layer 2 is further provided, the substrate layer 2 comprises a P-type monocrystalline silicon layer and a silicon dioxide layer, the insulation effect of the photosensitive layer 4 can be ensured by selecting the materials and the thickness of the silicon dioxide layer, the silicon dioxide layer can be prepared in a deposition or oxidation mode, the process cost is further reduced, and meanwhile, the P-type monocrystalline silicon layer can provide grid voltage to improve the regulation and control performance of detection signals.
EXAMPLE five
As shown in fig. 1, one embodiment of the present invention provides an ultraviolet photodetector including: a substrate layer 2, a photosensitive layer 4 and a nano-aluminum array layer 6.
Wherein the photosensitive layer 4 is arranged on the substrate layer 2; the nano aluminum array layer 6 is arranged on the photosensitive layer 4 and covers partial area of the photosensitive layer 4.
Wherein, nanometer aluminium array layer 6 includes: a plurality of nano aluminum blocks arranged on the photosensitive layer 4 in a rectangular array; and/or a plurality of aluminum nanoparticles disposed in a rectangular array on the photosensitive layer 4.
Further, the ultraviolet photodetector further includes: and the electrode layers 8 are arranged at two ends of the photosensitive layer 4.
In this embodiment, the uv detector is further provided with electrode layers 8 at both ends of the photosensitive layer 4 as source and drain electrodes of the uv detector.
Further, the electrode layer 8 includes a titanium layer and a gold layer, the thickness of the titanium layer is 3nm to 8nm, and the thickness of the gold layer is 70nm to 80 nm.
In this embodiment, the material and thickness of the electrode layer 8 are further provided, and the thickness is further determined by selecting the titanium layer and the gold layer, so that the electrode layer 8 has good conductivity, and the performance of the ultraviolet photodetector is further improved.
EXAMPLE six
As shown in fig. 2, an embodiment of the present invention provides a method for manufacturing an ultraviolet photodetector according to any one of the above embodiments, including:
step 102: forming a photosensitive layer on the substrate layer;
step 104: and depositing a metal aluminum layer on the photosensitive layer through a thermal evaporation process, and stripping part of the metal aluminum layer to expose the photosensitive layer so as to obtain the nano aluminum array layer.
In this embodiment, since the ultraviolet photodetector of any one of the above embodiments is manufactured by the manufacturing method, the manufacturing method has all the beneficial technical effects of the ultraviolet photodetector.
In the embodiment, the metal aluminum material with the aluminum nano structure can be formed on the photosensitive layer through a thermal evaporation process, and the nano aluminum array layer with the expected shape and pattern can be obtained by peeling off part of the metal aluminum material.
Specifically, step 104 is preceded by patterning the nano aluminum array layer on the photosensitive layer using a standard photolithography process, and then depositing a metal aluminum layer on the photosensitive layer by a thermal evaporation process.
EXAMPLE seven
As shown in fig. 3, an embodiment of the present invention provides a method for manufacturing an ultraviolet photodetector according to any one of the above embodiments, including:
step 202: preparing at least one hexagonal boron nitride layer on the copper foil by chemical vapor deposition;
step 204: coating a polymethacrylate layer on the hexagonal boron nitride layer and the copper foil;
step 206: corroding the copper foil by ferric trichloride;
step 208: transferring the hexagonal boron nitride layer and the polymethacrylate layer to the substrate layer; washing off the polymethacrylate layer by acetone;
step 210: depositing a metal aluminum layer on the photosensitive layer through a thermal evaporation process, stripping a part of the metal aluminum layer to expose the photosensitive layer, so as to obtain a nano aluminum array layer;
step 212: photoetching electrode patterns on the substrate layer and the photosensitive layer;
step 214: depositing an electrode metal layer on the electrode pattern;
step 216: and stripping part of the electrode metal layer to obtain the electrode layer.
In this embodiment, there is further provided a step of forming a photosensitive layer, in which at least one hexagonal boron nitride layer is formed on the copper foil, and then the at least one hexagonal boron nitride layer is transferred onto the substrate layer, and the photosensitive layer can be prepared by one-time transfer.
In the embodiment, the preparation steps of the electrode layer are further disclosed, the preparation process is simple, and batch preparation is facilitated.
Specifically, step 210 further includes patterning the nano aluminum array layer on the photosensitive layer using a standard photolithography process, and then depositing a metal aluminum layer on the photosensitive layer by a thermal evaporation process.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
As shown in fig. 1, this embodiment provides an ultraviolet photodetector including:
the substrate layer 2 comprises a P-type monocrystalline silicon layer and a silicon dioxide layer arranged on the P-type monocrystalline silicon layer, the thickness of the silicon dioxide layer is 300nm, and the substrate layer 2 is used for grid regulation and control of the ultraviolet photoelectric detector;
the single-layer or few-layer hexagonal boron nitride layer is arranged in the middle of the substrate layer and serves as a photosensitive layer 4 of the deep ultraviolet photoelectric detector;
the nano aluminum array layer 6 is arranged on a single layer or few layers of hexagonal boron nitride layers and is used as a light absorption layer of the enhanced device;
and the electrode layers 8 are arranged at two ends of the hexagonal boron nitride layer and used as source and drain electrodes of the ultraviolet photoelectric detector.
As shown in fig. 4, the specific preparation steps of this example are as follows:
step 302: preparing a hexagonal boron nitride layer;
step 304: transferring the hexagonal boron nitride layer by a wet method;
step 306: preparing a nano aluminum array layer;
step 308: and preparing an electrode layer.
Wherein, step 302 specifically includes: monolayer and few-layer hexagonal boron nitride layers on copper foil were prepared by controlling the quality of borane-ammonia complexes using low pressure Chemical Vapor Deposition (CVD).
Wherein step 304 specifically includes: spin-coating a layer of Polymethacrylate (PMMA) on the hexagonal boron nitride layer and the copper foil, corroding the copper foil by ferric trichloride, then transferring the hexagonal boron nitride layer and the PMMA/h-BN onto the substrate layer, utilizing acetone to soak for a plurality of times to wash off the polymethacrylate layer, and using deionized water to wash off residual impurities for a plurality of times.
Wherein step 306 specifically includes: preparing a pattern of a nano aluminum array layer on a hexagonal boron nitride layer by using a standard photoetching process, depositing a metal aluminum layer by using a thermal evaporation process, and finishing the preparation of a nano aluminum array layer structure comprising a plurality of nano aluminum blocks by using a stripping process, wherein the cross section of each nano aluminum block is square, the side length of each square is 40nm, the thickness of each nano aluminum block is 80nm, and the interval of each nano aluminum block array is 200 nm.
Wherein, step 308 specifically comprises: preparing an electrode pattern by using a standard photoetching process, wherein the thickness of the electrode pattern is Ti/Au: 5nm/75 nm. And depositing a Ti/Au metal layer by utilizing a thermal evaporation process, and finishing the preparation of the electrode by utilizing a stripping process.
This example utilizes the plasmon resonance effect of nano-aluminum structures to enhance the absorption of the material at the detection wavelength. The plasma resonance peak of the nano aluminum can reach an ultraviolet region, and the plasma resonance peak can appear in an absorption region of the hexagonal boron nitride layer by adjusting the size of the nano aluminum block structure. By utilizing the combined action of the hexagonal boron nitride layer and the deep ultraviolet light, the absorption of the hexagonal boron nitride layer to light is enhanced, and the separation of holes and electrons is realized under the regulation and control action of an electric field, so that the detection performance of the ultraviolet photoelectric detector is improved.
In the description of the present invention, the terms "plurality" or "a plurality" refer to two or more, and unless otherwise specifically limited, the terms "upper", "lower", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are merely for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention; the terms "connected," "mounted," "secured," and the like are to be construed broadly and include, for example, fixed connections, removable connections, or integral connections; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the description herein, the description of the terms "one embodiment," "some embodiments," "specific embodiments," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. An ultraviolet photodetector, comprising:
a substrate layer;
a photosensitive layer disposed on the substrate layer;
the nano aluminum array layer is arranged on the photosensitive layer and covers partial area of the photosensitive layer;
wherein the nano aluminum array layer comprises:
a plurality of nano aluminum blocks disposed on the photosensitive layer in a rectangular array; and/or
A plurality of aluminum nanoparticles disposed on the photosensitive layer in a rectangular array.
2. The ultraviolet photodetector of claim 1,
the cross section of the nano aluminum block is square, the side length of the square is 30nm to 50nm, and the thickness of the nano aluminum block is 60nm to 80 nm.
3. The ultraviolet photodetector of claim 1,
the array pitch of the rectangular array of the nano aluminum blocks is 150nm to 250 nm.
4. The ultraviolet photodetector of claim 1, wherein the photosensitive layer comprises:
at least one hexagonal boron nitride layer.
5. The ultraviolet photodetector of any one of claims 1 to 4, wherein the substrate layer comprises:
a P-type single crystal silicon layer;
a silicon dioxide layer disposed on the P-type single crystal silicon layer; the thickness of the silicon dioxide layer is 280nm to 300 nm;
wherein the photosensitive layer is disposed on the silicon dioxide layer.
6. The ultraviolet photodetector of any one of claims 1 to 4, further comprising:
and the electrode layers are arranged at two ends of the photosensitive layer.
7. The ultraviolet photodetector of claim 6,
the electrode layer comprises a titanium layer and a gold layer, the thickness of the titanium layer is 3nm to 8nm, and the thickness of the gold layer is 70nm to 80 nm.
8. A method of manufacturing the ultraviolet photodetector of any one of claims 1 to 7, comprising:
forming the photosensitive layer on the substrate layer;
and depositing a metal aluminum layer on the photosensitive layer through a thermal evaporation process, and stripping part of the metal aluminum layer to expose the photosensitive layer so as to obtain the nano aluminum array layer.
9. The method of claim 8, wherein the forming a photosensitive layer on a substrate layer comprises:
preparing at least one hexagonal boron nitride layer on the copper foil by chemical vapor deposition;
coating a polymethacrylate layer on the hexagonal boron nitride layer and the copper foil;
corroding the copper foil by ferric trichloride;
transferring the hexagonal boron nitride layer and the polymethacrylate layer onto the substrate layer;
the polymethacrylate layer was washed off by acetone.
10. The method of manufacturing according to claim 8, further comprising:
photoetching electrode patterns on the substrate layer and the photosensitive layer;
depositing an electrode metal layer on the electrode pattern;
and stripping off part of the electrode metal layer to obtain an electrode layer.
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