CN114551626A - Deep ultraviolet photoelectric detector and preparation method and application thereof - Google Patents
Deep ultraviolet photoelectric detector and preparation method and application thereof Download PDFInfo
- Publication number
- CN114551626A CN114551626A CN202210166042.7A CN202210166042A CN114551626A CN 114551626 A CN114551626 A CN 114551626A CN 202210166042 A CN202210166042 A CN 202210166042A CN 114551626 A CN114551626 A CN 114551626A
- Authority
- CN
- China
- Prior art keywords
- boron nitride
- hexagonal boron
- nitride film
- deep ultraviolet
- photosensitive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 169
- 229910052582 BN Inorganic materials 0.000 claims abstract description 162
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 239000002082 metal nanoparticle Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 239000002086 nanomaterial Substances 0.000 claims abstract description 11
- 238000001514 detection method Methods 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 103
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 52
- 229910052737 gold Inorganic materials 0.000 claims description 52
- 239000010931 gold Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 49
- 239000002135 nanosheet Substances 0.000 claims description 46
- 239000000126 substance Substances 0.000 claims description 34
- 238000000151 deposition Methods 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000012544 monitoring process Methods 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 238000011160 research Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical class [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229920002717 polyvinylpyridine Polymers 0.000 description 39
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 33
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 31
- 229910052719 titanium Inorganic materials 0.000 description 31
- 239000010936 titanium Substances 0.000 description 31
- 239000000463 material Substances 0.000 description 29
- 239000000243 solution Substances 0.000 description 27
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 26
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 24
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 22
- 239000002105 nanoparticle Substances 0.000 description 20
- 150000002500 ions Chemical class 0.000 description 17
- 239000000693 micelle Substances 0.000 description 17
- SDKPSXWGRWWLKR-UHFFFAOYSA-M sodium;9,10-dioxoanthracene-1-sulfonate Chemical compound [Na+].O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2S(=O)(=O)[O-] SDKPSXWGRWWLKR-UHFFFAOYSA-M 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 15
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 12
- 238000005286 illumination Methods 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000008367 deionised water Substances 0.000 description 10
- 229910021641 deionized water Inorganic materials 0.000 description 10
- 229920000359 diblock copolymer Polymers 0.000 description 10
- 239000006185 dispersion Substances 0.000 description 10
- 238000005406 washing Methods 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- 238000000576 coating method Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 230000005284 excitation Effects 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 6
- 239000003153 chemical reaction reagent Substances 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 6
- 239000012286 potassium permanganate Substances 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000006228 supernatant Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000005457 ice water Substances 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 238000003760 magnetic stirring Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- 201000004569 Blindness Diseases 0.000 description 2
- 229910004042 HAuCl4 Inorganic materials 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000001548 drop coating Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001027 hydrothermal synthesis Methods 0.000 description 2
- 230000004298 light response Effects 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- XVMSFILGAMDHEY-UHFFFAOYSA-N 6-(4-aminophenyl)sulfonylpyridin-3-amine Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=N1 XVMSFILGAMDHEY-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002077 nanosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention provides a deep ultraviolet photoelectric detector and a preparation method and application thereof, belonging to the technical field of photoelectric detection. The deep ultraviolet photoelectric detector provided by the invention comprises a dielectric insulating substrate, a photosensitive layer arranged on the surface of the dielectric insulating substrate and two electrodes arranged at two opposite ends of the photosensitive layer; the photosensitive layer comprises a hexagonal boron nitride film and a surface plasmon structure attached to the surface of part of the hexagonal boron nitride film, the hexagonal boron nitride film is in contact with the dielectric insulating substrate, one electrode is arranged on the surface of the hexagonal boron nitride film to which the surface plasmon structure is not attached, and the other electrode is arranged on the surface of the hexagonal boron nitride film to which the surface plasmon structure is attached; the surface plasmon structure comprises a metal nanoparticle or a semiconductor nanostructure. The deep ultraviolet photoelectric detector provided by the invention has extremely low dark current and high responsivity to deep ultraviolet light.
Description
Technical Field
The invention relates to the technical field of photoelectric detection, in particular to a deep ultraviolet photoelectric detector and a preparation method and application thereof.
Background
Photon detection in a deep ultraviolet region (with the wavelength of 200-280 nm) is important in the fields of flame monitoring and detection, biomedicine, chemistry and environment monitoring, ultraviolet astronomy, inter-satellite communication and the like. The wide bandgap semiconductor material has excellent physicochemical properties, and thus has a wide prospect in high-frequency, high-temperature, high-power and short-wavelength applications. Hexagonal boron nitride is an ultra-wide bandgap semiconductor material, and has been proved to be an ideal candidate material for a deep ultraviolet photoelectric detector with daily blindness due to the characteristics of oxidation resistance, radiation resistance, capability of working at high temperature and in a severe environment, and difficulty in reaction with chemical substances. Furthermore, the wide band gap of hexagonal boron nitride (h-BN) greatly simplifies the design of the device by avoiding the sun suppression filter and additional cooling system, as compared to other conventional wide band gap semiconductors. In the current research, the deep ultraviolet photoelectric detector prepared based on the large-area high-quality hexagonal boron nitride two-dimensional atomic crystal film has good daily blindness, but the performance of most of the deep ultraviolet photoelectric detectors based on the hexagonal boron nitride film reported so far is still poor, and the problems of low deep ultraviolet responsivity and high dark current mainly exist.
Disclosure of Invention
The invention aims to provide a deep ultraviolet photoelectric detector, a preparation method and application thereof.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a deep ultraviolet photoelectric detector, which comprises a dielectric insulating substrate, a photosensitive layer arranged on the surface of the dielectric insulating substrate and two electrodes arranged at two opposite ends of the photosensitive layer;
the photosensitive layer comprises a hexagonal boron nitride film and a surface plasmon structure attached to the surface of part of the hexagonal boron nitride film, the hexagonal boron nitride film is in contact with the dielectric insulating substrate, one electrode is arranged on the surface of the hexagonal boron nitride film to which the surface plasmon structure is not attached, and the other electrode is arranged on the surface of the hexagonal boron nitride film to which the surface plasmon structure is attached;
the surface plasmon structure comprises a metal nanoparticle or a semiconductor nanostructure.
Preferably, the thickness of the hexagonal boron nitride film is 100-500 nm.
Preferably, the material of the metal nanoparticles comprises gold, aluminum, silver, copper or platinum.
Preferably, the particle size of the metal nanoparticles is 1-10 nm, and the distance between adjacent metal nanoparticles on the surface of the hexagonal boron nitride film is 25-150 nm.
Preferably, the semiconductor nanostructure comprises hexagonal boron nitride nanoplates.
Preferably, the lateral dimension of the hexagonal boron nitride nanosheet is 1-45 μm, and the thickness of the hexagonal boron nitride nanosheet is 0.3-2 μm; the distance between adjacent hexagonal boron nitride nanosheets on the surface of the hexagonal boron nitride film is 1-20 microns.
Preferably, the dielectric insulating substrate comprises a sapphire substrate, a quartz glass substrate or a silicon oxide substrate.
Preferably, the electrode is a metal electrode.
The invention provides a preparation method of the deep ultraviolet photoelectric detector in the technical scheme, which comprises the following steps:
depositing on the surface of a dielectric insulating substrate to obtain a hexagonal boron nitride film, preparing a surface plasmon structure on part of the surface of the hexagonal boron nitride film, and forming a photosensitive layer on the surface of the dielectric insulating substrate;
and arranging two electrodes at two opposite ends of the photosensitive layer, wherein one electrode is arranged on the surface of the hexagonal boron nitride film without the surface plasmon structure, and the other electrode is arranged on the surface of the hexagonal boron nitride film with the surface plasmon structure, so that the deep ultraviolet photoelectric detector is obtained.
The invention provides an application of the deep ultraviolet photoelectric detector in the technical scheme or the deep ultraviolet photoelectric detector prepared by the preparation method in the technical scheme in the fields of chemical environment monitoring, biological environment monitoring, missile plume, radiation detection, astronomical research or satellite communication.
The invention provides a deep ultraviolet photoelectric detector, which comprises a dielectric insulating substrate, a photosensitive layer arranged on the surface of the dielectric insulating substrate and two electrodes arranged at two opposite ends of the photosensitive layer; the photosensitive layer comprises a hexagonal boron nitride film and a surface plasmon structure attached to the surface of part of the hexagonal boron nitride film, the hexagonal boron nitride film is in contact with the dielectric insulating substrate, one electrode is arranged on the surface of the hexagonal boron nitride film to which the surface plasmon structure is not attached, and the other electrode is arranged on the surface of the hexagonal boron nitride film to which the surface plasmon structure is attached; the surface plasmon structure comprises a metal nanoparticle or a semiconductor nanostructure. According to the invention, metal nanoparticles or semiconductor nanostructures are used as surface plasmon structures, so that the surface plasmon structures have the characteristic of extremely strong local field enhancement, the surface plasmon structures and the hexagonal boron nitride film are compounded to be used as photosensitive layers, the deep ultraviolet photoelectric detector based on the photosensitive layers has extremely low dark current, high responsivity to deep ultraviolet light (especially extremely high responsivity to 205nm ultraviolet light), and excellent spectral selectivity to deep ultraviolet light, the light absorption in the wavelength range of the deep ultraviolet light (200-280 nm) is remarkably enhanced, and no light absorption exists in the visible light to near infrared region (400-800 nm), so that the problems of high dark current, low light absorption in the deep ultraviolet region and low responsivity of the traditional hexagonal boron nitride film deep ultraviolet photoelectric detector can be improved. In addition, the surface plasmon structure is only attached to part of the surface of the hexagonal boron nitride film, one electrode is arranged on the surface of the hexagonal boron nitride film without the surface plasmon structure, and the other electrode is arranged on the surface of the hexagonal boron nitride film with the surface plasmon structure, so that an asymmetric vertical structure is formed, and the photoelectric characteristic enhancement effect of the detector in a deep ultraviolet light region is favorably improved.
The invention adopts the hexagonal boron nitride film as the photosensitive material, compared with other traditional semiconductor (such as SiC) deep ultraviolet photoelectric detection devices, the device process is simplified, and additional filtering wave plates and cooling devices are not needed.
Drawings
Fig. 1 is a Scanning Electron Microscope (SEM) photograph of the photosensitive layer in the deep ultraviolet photodetector prepared in example 1;
fig. 2 is a schematic structural diagram of the deep ultraviolet photodetector prepared in example 1;
fig. 3 is a Scanning Electron Microscope (SEM) photograph of the photosensitive layer in the deep ultraviolet photodetector prepared in example 2;
fig. 4 is a schematic structural view of the deep ultraviolet photodetector manufactured in example 2;
FIG. 5 is an I-V plot of a deep UV photodetector of example 1 under dark conditions and 205nm UV illumination;
FIG. 6 is an I-V plot of a deep UV photodetector of example 2 under dark conditions and 205nm UV illumination;
FIG. 7 is an I-V plot of a deep UV photodetector of example 1 under dark conditions and 330nm UV illumination;
FIG. 8 is an I-V curve of the deep UV photodetector of example 2 under dark conditions and 330nm UV illumination;
FIG. 9 is a histogram of the responsivity of deep ultraviolet photodetectors prepared in example 1 and comparative example 1 under 205nm and 330nm ultraviolet light illumination;
FIG. 10 is a histogram of the responsivity of deep UV photodetectors prepared in example 2 and comparative example 1 under 205nm and 330nm UV illumination;
fig. 11 is a graph of the ultraviolet-visible absorption spectrum of the deep ultraviolet photodetectors prepared in examples 1 to 2 and comparative example 1 at room temperature.
Detailed Description
The invention provides a deep ultraviolet photoelectric detector, which comprises a dielectric insulating substrate, a photosensitive layer arranged on the surface of the dielectric insulating substrate and two electrodes arranged at two opposite ends of the photosensitive layer;
the photosensitive layer comprises a hexagonal boron nitride film and a surface plasmon structure attached to the surface of part of the hexagonal boron nitride film, the hexagonal boron nitride film is in contact with the dielectric insulating substrate, one electrode is arranged on the surface of the hexagonal boron nitride film to which the surface plasmon structure is not attached, and the other electrode is arranged on the surface of the hexagonal boron nitride film to which the surface plasmon structure is attached;
the surface plasmon structure comprises a metal nanoparticle or a semiconductor nanostructure.
The deep ultraviolet photoelectric detector provided by the invention comprises a dielectric insulating substrate. In the present invention, the dielectric insulating substrate preferably includes a sapphire substrate, a quartz glass substrate, or a silicon oxide substrate. In the invention, the thickness of the dielectric insulating substrate is preferably 300-700 μm, and more preferably 400-500 μm.
The deep ultraviolet photoelectric detector provided by the invention comprises a photosensitive layer arranged on the surface of a dielectric insulating substrate, wherein the photosensitive layer comprises a hexagonal boron nitride film and a surface plasmon structure attached to the surface of part of the hexagonal boron nitride film, and the hexagonal boron nitride film is in contact with the dielectric insulating substrate. In the invention, the thickness of the hexagonal boron nitride film is preferably 100-500 nm, and more preferably 100-200 nm. In the present invention, the surface plasmon structure includes a metal nanoparticle or a semiconductor nanostructure. In the present invention, the material of the metal nanoparticles preferably includes gold, aluminum, silver, copper or platinum, and more preferably gold; the particle size of the metal nanoparticles is preferably 1-10 nm, more preferably 6-10 nm, and further preferably 9-10 nm; the distance between adjacent metal nanoparticles on the surface of the hexagonal boron nitride film is preferably 25-150 nm, more preferably 30-50 nm, and further preferably 0-35 nm. In the invention, the semiconductor nano structure preferably comprises hexagonal boron nitride nano sheets, and the transverse size of the hexagonal boron nitride nano sheets is preferably 1-45 μm, and more preferably 1-5 μm; the thickness of the hexagonal boron nitride nanosheet is preferably 0.3-2 μm, and more preferably 0.3-1 μm; the distance between adjacent hexagonal boron nitride nanosheets on the surface of the hexagonal boron nitride film is preferably 1-20 microns, and more preferably 1-10 microns. In the present invention, the area of the hexagonal boron nitride film to which the surface plasmon structure is attached preferably accounts for at least 50% of the total area of the hexagonal boron nitride film.
The deep ultraviolet photoelectric detector provided by the invention comprises two electrodes arranged at two opposite ends of a photosensitive layer, wherein one electrode is arranged on the surface of the hexagonal boron nitride film without the surface plasmon structure, and the other electrode is arranged on the surface of the hexagonal boron nitride film with the surface plasmon structure, namely, the deep ultraviolet photoelectric detector provided by the invention is of an asymmetric structure. In the present invention, the electrodes are preferably strip-shaped electrodes. In the present invention, the electrode is preferably a metal electrode; the thickness of the metal electrode is preferably 80-120 nm, and more preferably 100-120 nm; the material of the metal electrode preferably comprises one or more of gold, silver, titanium, molybdenum and chromium, and the metal electrode more preferably is a gold/titanium electrode; the gold/titanium electrode preferably comprises a gold layer and a titanium layer which are arranged in a laminated mode, the thickness of the gold layer is 50-100 nm, the thickness of the titanium layer is preferably 10-20 nm, and the titanium layer is in contact with the photosensitive layer.
The invention provides a preparation method of the deep ultraviolet photoelectric detector in the technical scheme, which comprises the following steps:
depositing on the surface of a dielectric insulating substrate to obtain a hexagonal boron nitride film, preparing a surface plasmon structure on part of the surface of the hexagonal boron nitride film, and forming a photosensitive layer on the surface of the dielectric insulating substrate;
and arranging two electrodes at two opposite ends of the photosensitive layer, wherein one electrode is arranged on the surface of the hexagonal boron nitride film without the surface plasmon structure, and the other electrode is arranged on the surface of the hexagonal boron nitride film with the surface plasmon structure, so that the deep ultraviolet photoelectric detector is obtained.
According to the invention, a hexagonal boron nitride film is obtained by deposition on the surface of a dielectric insulating substrate, a surface plasmon structure is prepared on part of the surface of the hexagonal boron nitride film, and a photosensitive layer is formed on the surface of the dielectric insulating substrate. In the present invention, the dielectric insulating substrate is preferably subjected to a pretreatment before use, the pretreatment preferably comprising: and ultrasonic cleaning the dielectric insulating substrate by using acetone and deionized water in sequence, then soaking the dielectric insulating substrate in a mixed solution of hydrogen peroxide and sulfuric acid, taking out the dielectric insulating substrate, ultrasonic cleaning by using deionized water and ethanol in sequence, and finally drying by using nitrogen. In the invention, the time of ultrasonic cleaning for each time is preferably 5-8 min independently; the hydrogen peroxide is preferably analytically pure, the sulfuric acid is preferably analytically pure, and the volume ratio of the hydrogen peroxide to the sulfuric acid is preferably 1: 3; the soaking time is preferably 10-15 min.
In the invention, the preparation method of the hexagonal boron nitride film preferably comprises a chemical vapor deposition method or a physical vapor deposition method, the chemical vapor deposition method preferably comprises a radio frequency plasma chemical vapor deposition method, a microwave plasma enhanced chemical vapor deposition method or an induction coupled plasma chemical vapor deposition method, and the physical vapor deposition method preferably comprises a radio frequency magnetron sputtering method, an ion beam assisted sputtering deposition method or a laser deposition method. The invention preferably adopts an ion beam assisted sputtering deposition method to prepare the hexagonal boron nitride film, and the operation steps of the ion beam assisted sputtering deposition method preferably comprise: and (2) using a double-ion-beam auxiliary sputtering deposition system to vacuumize the film deposition chamber, heating the dielectric insulating substrate, then introducing a main ion source and an auxiliary ion source, adjusting the working pressure of the film deposition chamber, then opening a Kaufman ion source, adjusting the energy of the main ion source and the energy of the auxiliary ion source, performing deposition, and depositing on the surface of the dielectric insulating substrate to obtain the hexagonal boron nitride film. In the present invention, the evacuation treatment is preferably carried out by evacuating the thin film deposition chamber to a degree of vacuum of 2X 10-5Pa; the heating is preferably carried out to heat the temperature of the dielectric insulating substrate to 300-500 ℃; the main ion source is preferably argon, and the flow rate of the main ion source is preferably 6 sccm; the auxiliary ion source is preferably argon and nitrogen, the flow rate of the argon is preferably 2sccm, and the flow rate of the nitrogen is preferably 3 sccm; the working pressure of the film deposition chamber is preferably (3-5) multiplied by 10-2Pa; the main ion source energy is preferably 1250eV, and the auxiliary ion source energy is preferably 280 eV; the deposition time is preferably 2-8 h.
After the hexagonal boron nitride film is deposited on the surface of the dielectric insulating substrate, the surface plasmon structure is prepared on part of the surface of the hexagonal boron nitride film, and the photosensitive layer is formed on the surface of the dielectric insulating substrate. According to the invention, different preparation methods are preferably adopted according to different surface plasmon structures, and particularly, when the surface plasmon structure is a metal nanoparticle, the metal nanoparticle can be prepared by a self-assembly micelle method, a nanosphere photoetching method, a rapid thermal annealing method or a hydrothermal method; when the surface plasmon structure is a semiconductor nanostructure, such as further hexagonal boron nitride nanosheets, it may be prepared using a mechanical lift-off method, preferably including a tape lift-off method, a ball milling method, a plasma etching method or a fluid lift-off method, a chemical lift-off method, preferably including a liquid phase ultrasonic lift-off method, an ion insertion lift-off method or a chemical functionalization lift-off method, or a synthetic method, preferably including a chemical synthesis method, a hydrothermal synthesis method or a gas phase synthesis method. The following describes in detail the preparation methods of the gold nanoparticles, the hexagonal boron nitride nanosheets and the photosensitive layer, taking the surface plasmon structure as gold nanoparticles or hexagonal boron nitride nanosheets as an example.
In the present invention, when the surface plasmon structure is a gold nanoparticle, the method for preparing the gold nanoparticle and the photosensitive layer preferably includes the following steps:
dispersing a diblock copolymer, namely polystyrene-polyvinyl pyridine, in toluene to obtain a toluene solution of the polystyrene-polyvinyl pyridine; mixing gold-containing inorganic metal salt with the toluene solution of the polystyrene-polyvinyl pyridine to obtain a gold salt-loaded polystyrene-polyvinyl pyridine reverse micelle solution;
coating the gold salt-loaded polystyrene-polyvinyl pyridine reverse micelle solution on part of the surface of the hexagonal boron nitride film, reducing the gold salt-loaded polystyrene-polyvinyl pyridine reverse micelle solution in the gold salt-loaded polystyrene-polyvinyl pyridine reverse micelle solution to generate gold nanoparticles, and obtaining the photosensitive layer on the surface of the substrate.
The invention disperses diblock copolymer polystyrene-polyvinyl pyridine in toluene to obtain toluene solution of polystyrene-polyvinyl pyridine. In the present invention, the molecular weight of polystyrene in the diblock copolymer polystyrene-polyvinylpyridine is preferably 185000, and the molecular weight of polyvinylpyridine is preferably 90000; in the examples of the present invention, the purity of the diblock copolymer, polystyrene-polyvinylpyridine, was not less than 99.5%, and was purchased from Afahesa (China) chemical Co. In the invention, in the toluene solution of polystyrene-polyvinylpyridine, the concentration of polystyrene-polyvinylpyridine is preferably 5-25 mg/mL, and more preferably 5-10 mg/mL; the dispersing mode is preferably magnetic stirring, and the time of the magnetic stirring is preferably 3-7 days.
After the toluene solution of polystyrene-polyvinylpyridine is obtained, the gold-containing inorganic metal salt is mixed with the toluene solution of polystyrene-polyvinylpyridine to obtain the gold salt loaded polystyrene-polyvinylpyridine reverse micelle solution. In the present invention, the gold-containing inorganic metal salt is preferably HAuCl4The mass ratio of the gold-containing inorganic metal salt to the diblock copolymer polystyrene-polyvinyl pyridine is preferably (15-40): 50, more preferably (16-27): 50; the mixing mode is preferably magnetic stirring, and the time of the magnetic stirring is preferably 7-14 days.
After the gold salt-loaded polystyrene-polyvinyl pyridine reverse micelle solution is obtained, coating the gold salt-loaded polystyrene-polyvinyl pyridine reverse micelle solution on part of the surface of the hexagonal boron nitride film, reducing the gold salt-loaded polystyrene-polyvinyl pyridine reverse micelle solution in the gold salt-loaded polystyrene-polyvinyl pyridine reverse micelle solution to generate gold nanoparticles, and obtaining a photosensitive layer on the surface of the substrate; wherein the elements contained in the diblock copolymer polystyrene-polyvinylpyridine are C, H and N, and are reduced into corresponding gases in the reduction treatment process without remaining in the photosensitive layer; one end of the diblock copolymer polystyrene-polyvinyl pyridine is hydrophilic, and the other end of the diblock copolymer polystyrene-polyvinyl pyridine is hydrophobic, so that the polystyrene-polyvinyl pyridine reverse micelle solution loaded with the gold salt is ensured to be uniformly distributed on the surface of the substrate in the pulling process by utilizing the performance. In the present invention, the coating method preferably includes a drawing method, a spin coating method or a drop coating method, more preferably a drawing method; in the embodiment of the invention, a part of square boron nitride film is placed in the gold salt-loaded polystyrene-polyvinylpyridine reverse micelle solution, and the gold salt-loaded polystyrene-polyvinylpyridine reverse micelle solution is pulled on a part of hexagonal boron nitride film; the pulling speed is preferably 200-300 μm/s, and more preferably 234 μm/s. In the present invention, the method of reduction treatment preferably includes a hydrogen plasma treatment method, a hydrogen reduction method, or a high-temperature annealing method, more preferably a hydrogen reduction method; the operating conditions of the hydrogen reduction process include: the flow rate of the hydrogen is preferably 30-50 sccm, and more preferably 40-50 sccm; the temperature of the heat treatment is preferably 450-550 ℃, and more preferably 500 ℃; the time of the heat treatment is preferably 1 to 3 hours, and more preferably 2 hours.
In the present invention, when the surface plasmon structure is a hexagonal boron nitride nanosheet, the method for preparing the hexagonal boron nitride nanosheet and the photosensitive layer preferably includes the following steps:
mixing hexagonal boron nitride powder with potassium permanganate to obtain a solid mixed material; mixing sulfuric acid and phosphoric acid to obtain mixed acid; mixing the solid mixed material with mixed acid, and performing first chemical treatment under a heating condition to obtain a first chemical material; mixing the first chemical material with aqueous hydrogen peroxide, and performing second chemical treatment under the ice-water bath condition to obtain a second chemical material;
carrying out low-speed centrifugal separation on the second chemical material to obtain supernatant; alternately carrying out high-speed centrifugal washing on the supernatant by using deionized water and ethanol until the pH value is greater than 5, and drying a precipitate obtained after the high-speed centrifugal washing to obtain a hexagonal boron nitride nanosheet; the rotating speed of the low-speed centrifugal separation is 3000-5000 rpm, and the rotating speed of the high-speed centrifugal washing is 16000-20000 rpm;
dispersing the hexagonal boron nitride nanosheet in ethanol to obtain a hexagonal boron nitride nanosheet dispersion liquid; and coating the hexagonal boron nitride nanosheet dispersion liquid on part of the surface of the hexagonal boron nitride film, and volatilizing ethanol to obtain a photosensitive layer on the surface of the substrate.
According to the invention, hexagonal boron nitride powder and potassium permanganate are mixed to obtain a solid mixed material. In the invention, the granularity of the hexagonal boron nitride powder is preferably 1-45 μm; the mass ratio of the hexagonal boron nitride powder to the potassium permanganate is preferably 1: (2-6), more preferably 1: (5-6). In the examples of the present invention, the purity of the hexagonal boron nitride powder is not less than 99.5%, and is purchased from alfa aesar (china) chemical limited; the potassium permanganate is analytically pure and purchased from Beijing chemical reagent company.
The invention mixes sulfuric acid and phosphoric acid to obtain mixed acid. In the present invention, the sulfuric acid is preferably analytically pure, the phosphoric acid is preferably analytically pure, and the volume ratio of the sulfuric acid to the phosphoric acid is preferably 8: (1-2). In the examples of the present invention, the sulfuric acid and phosphoric acid are available from Beijing Chemicals, Inc.
After the solid mixed material and the mixed acid are obtained, the solid mixed material and the mixed acid are mixed, and first chemical treatment is carried out under the heating condition to obtain a first chemical material. In the invention, the dosage ratio of the solid mixed material to the mixed acid is preferably (3-7) g: (135-150) mL, more preferably (6-7) g: (135-140) mL. In the invention, the temperature of the first chemical treatment is preferably 70-78 ℃, and more preferably 74-75 ℃; the time is preferably 10-14 h, and more preferably 12 h; the first chemical treatment is preferably performed under stirring conditions. In the invention, in the first chemical treatment process, potassium permanganate reacts with sulfuric acid to generate manganese dioxide nanoparticles, and the manganese dioxide nanoparticles are inserted between boron nitride layers in hexagonal boron nitride powder (namely massive hexagonal boron nitride), so that the distance between the layers is increased, and stripping is conveniently carried out by the subsequent second chemical treatment.
After the first chemical material is obtained, the first chemical material is mixed with aqueous hydrogen peroxide, and second chemical treatment is carried out under the ice-water bath condition to obtain a second chemical material. In the invention, the aqueous hydrogen peroxide solution is preferably obtained by mixing analytically pure hydrogen peroxide and deionized water, and the volume ratio of the analytically pure hydrogen peroxide to the deionized water is preferably 1: (6-20), more preferably 1: (6-8). In the examples of the present invention, the analytically pure hydrogen peroxide is purchased from Beijing chemical reagent company. In the invention, the aqueous hydrogen peroxide solution is preferably subjected to refrigeration treatment before use, and the refrigeration temperature is preferably-5 ℃, and more preferably-5-0 ℃; the time is preferably 12 to 24 hours, and more preferably 12 to 15 hours. In the invention, the time of the second chemical treatment is preferably 1.5-2 h, and the second chemical treatment is preferably carried out under the condition of stirring. After the second chemical treatment, the present invention preferably cools the resulting suspension naturally to room temperature (25 ℃) to obtain a second chemical material. In the invention, in the second chemical treatment process, the manganese dioxide nanoparticles react with hydrogen peroxide to generate oxygen, and the release of the oxygen can realize the stripping of hexagonal boron nitride powder (i.e. blocky hexagonal boron nitride), so as to obtain the hexagonal boron nitride nanosheet.
Carrying out low-speed centrifugal separation on the second chemical material to obtain supernatant; alternately carrying out high-speed centrifugal washing on the supernatant by using deionized water and ethanol until the pH value is greater than 5, and drying a precipitate obtained after the high-speed centrifugal washing to obtain a hexagonal boron nitride nanosheet; the rotating speed of the low-speed centrifugal separation is 3000-5000 rpm, and the rotating speed of the high-speed centrifugal washing is 16000-20000 rpm. In the invention, the time of the low-speed centrifugal separation is preferably 10-15 min, and the time of each high-speed centrifugal washing is preferably 10-15 min.
After the hexagonal boron nitride nanosheet is obtained, dispersing the hexagonal boron nitride nanosheet in ethanol to obtain a hexagonal boron nitride nanosheet dispersion liquid; and coating the hexagonal boron nitride nanosheet dispersion liquid on part of the surface of the hexagonal boron nitride film, and volatilizing ethanol to obtain a photosensitive layer on the surface of the substrate. In the invention, the concentration of the hexagonal boron nitride nanosheet dispersion is preferably 0.01-0.05 mg/mL, and more preferably 0.01-0.03 mg/mL. In the present invention, the coating method preferably includes a drawing method, a spin coating method or a drop coating method, more preferably a drawing method; in the embodiment of the invention, a part of the hexagonal boron nitride film is placed in the hexagonal boron nitride nanosheet dispersion, and the hexagonal boron nitride nanosheet dispersion is pulled on the part of the hexagonal boron nitride film; the pulling rate is preferably 10 to 50 μm/s, and more preferably 15 to 20 μm/s.
After the photosensitive layer is obtained, two electrodes are arranged at two opposite ends of the photosensitive layer, wherein one electrode is arranged on the surface of the hexagonal boron nitride film without the surface plasmon structure, and the other electrode is arranged on the surface of the hexagonal boron nitride film with the surface plasmon structure, so that the deep ultraviolet photoelectric detector is obtained. The electrode is prepared by preferably adopting a magnetron sputtering method or an evaporation coating method; the specific operating conditions of the magnetron sputtering method and the evaporation coating method are not particularly limited, and the specific operation conditions can be selected according to the material and the thickness of the electrode.
The deep ultraviolet photoelectric detector provided by the invention is simple in preparation process, low in cost and suitable for large-scale production.
The invention provides an application of the deep ultraviolet photoelectric detector in the technical scheme or the deep ultraviolet photoelectric detector prepared by the preparation method in the technical scheme in the fields of chemical environment monitoring, biological environment monitoring, missile plume, radiation detection, astronomical research or satellite communication.
The technical solution of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
(1) Adding a mixture of massive hexagonal boron nitride bulk powder (granularity is 1-45 mu m, purity is more than or equal to 99.5%, Afahesa, 1g) and potassium permanganate (analytically pure, Beijing reagent, 6g) into an acidic mixture of sulfuric acid (analytically pure, Beijing reagent, 120mL) and phosphoric acid (analytically pure, Beijing reagent, 15mL), and stirring the obtained mixed material at 75 ℃ for 12h to obtain a first chemical material; mixing hydrogen peroxide (analytically pure, Beijing reagent, 18mL) and deionized water (120mL), refrigerating at-5 ℃ for 12h, mixing the obtained refrigerated solution with the first chemical material, stirring for 1.5h under the condition of ice-water bath, then removing the ice-water bath, and naturally cooling to room temperature (25 ℃) to obtain a second chemical material; and (3) carrying out centrifugal separation on the second chemical material for 15min at 3000rpm, alternately carrying out high-speed centrifugal washing on the obtained supernatant by using deionized water and ethanol at 20000rpm, wherein the time of each centrifugal washing is 15min until the pH value is more than 5, and then drying the precipitate obtained after the high-speed centrifugal washing to obtain hexagonal Boron Nitride Nanosheets (BNNSs), wherein the transverse dimension of the hexagonal boron nitride nanosheets is 1-5 microns, and the thickness of the hexagonal boron nitride nanosheets is 0.3-1 micron.
(2) Taking a quartz glass substrate (with the thickness of 400nm) as a dielectric insulating substrate, ultrasonically cleaning the quartz glass substrate for 5min by using acetone and deionized water in sequence, then soaking the quartz glass substrate in a mixed solution of hydrogen peroxide and sulfuric acid (the volume ratio of the hydrogen peroxide to the sulfuric acid is 1: 3) for 10min, then taking out the quartz glass substrate, ultrasonically cleaning the quartz glass substrate for 5min by using deionized water and ethanol in sequence, finally drying the quartz glass substrate by using nitrogen to obtain a pretreated substrate, and drying and storing the pretreated substrate;
the vacuum degree of the film deposition chamber is pumped to 2 multiplied by 10 by adopting a double ion beam auxiliary sputtering deposition system-5Pa, heating the pretreated substrate to 500 ℃, introducing 6sccm of argon gas of a main ion source, 2sccm of argon gas of an auxiliary ion source and 3sccm of nitrogen gas of the auxiliary ion source, and adjusting the working pressure of the thin film deposition chamber to 3 multiplied by 10-2Pa, then opening a Kaufman ion source, adjusting the energy of the main ion source to 1250eV, adjusting the energy of the auxiliary ion source to 280eV, depositing for 2h, and depositing on the surface of the substrate to obtain the hexagonal boron nitride film with the thickness of 200 nm.
(3) Uniformly dispersing the hexagonal boron nitride nanosheets into ethanol to enable the concentration of the hexagonal boron nitride nanosheets to be 0.01mg/mL, so as to obtain a hexagonal boron nitride nanosheet dispersion liquid; placing a part of the substrate deposited with the hexagonal boron nitride film in the hexagonal boron nitride nanosheet dispersion, pulling the hexagonal boron nitride nanosheet dispersion on the part of the hexagonal boron nitride film at a speed of 15 mu m/s, and obtaining a photosensitive layer on the surface of the substrate after ethanol is completely volatilized, wherein the photosensitive layer comprises the hexagonal boron nitride film and the hexagonal boron nitride nanosheets attached to the part of the surface of the hexagonal boron nitride film, the spacing distance between every two adjacent hexagonal boron nitride nanosheets is 1-10 mu m, and the area of the hexagonal boron nitride film attached with the hexagonal boron nitride nanosheets accounts for 50% of the total area of the hexagonal boron nitride film.
(4) And depositing at two opposite ends of the surface of the photosensitive layer by adopting a magnetron sputtering method to obtain two strip gold/titanium electrodes, wherein one strip gold/titanium electrode is deposited on the surface of the hexagonal boron nitride film without the hexagonal boron nitride nanosheets, the other strip gold/titanium electrode is deposited on the surface of the hexagonal boron nitride film with the hexagonal boron nitride nanosheets, the gold/titanium electrodes comprise a gold layer and a titanium layer which are arranged in a laminated manner, the thickness of the gold layer is 100nm, the thickness of the titanium layer is 20nm, and the titanium layer is in contact with the photosensitive layer to obtain the deep ultraviolet photoelectric detector (h-BN/BNNSs).
Fig. 1 is a Scanning Electron Microscope (SEM) photograph of the photosensitive layer in the deep ultraviolet photodetector prepared in example 1, and it can be seen that hexagonal boron nitride nanosheets have been composited on the hexagonal boron nitride thin film.
Fig. 2 is a schematic structural diagram of the deep ultraviolet photodetector prepared in embodiment 1, which includes a substrate, a photosensitive layer disposed on a surface of the substrate, and two strip-shaped gold/titanium electrodes disposed at two opposite ends of the photosensitive layer, where the photosensitive layer includes a hexagonal boron nitride thin film and a hexagonal boron nitride nanosheet attached to a partial surface of the hexagonal boron nitride thin film, one of the strip-shaped gold/titanium electrodes is disposed on a surface of the hexagonal boron nitride thin film to which the hexagonal boron nitride nanosheet is not attached, and the other strip-shaped gold/titanium electrode is disposed on a surface of the hexagonal boron nitride thin film to which the hexagonal boron nitride nanosheet is attached, that is, the deep ultraviolet photodetector provided by the present invention has an asymmetric structure.
Example 2
(1) Dispersing 50mg of diblock copolymer polystyrene-polyvinylpyridine (purity is more than or equal to 99.95 percent, alfa aesar; molecular weight of polystyrene in the diblock copolymer polystyrene-polyvinylpyridine is 185000, molecular weight of polyvinylpyridine is 90000) in 10mL of toluene, and magnetically stirring for 7 days to completely dissolve the polystyrene-polyvinylpyridine to obtain the polystyrene-polyvinylpyridine suspensionTo a toluene solution of polystyrene-polyvinylpyridine; 26mg of HAuCl4Adding the solution into a toluene solution of polystyrene-polyvinyl pyridine, and magnetically stirring for 7 days to obtain a gold salt-loaded polystyrene-polyvinyl pyridine reverse micelle solution.
(2) The quartz glass substrate was pretreated in the same manner as in the step (2) in example 1, and then deposited on the surface of the substrate to obtain a hexagonal boron nitride film having a thickness of 200 nm.
(3) Placing a part of the substrate deposited with the hexagonal boron nitride film in the polystyrene-polyvinyl pyridine reverse micelle solution loaded with the gold salt, pulling the gold salt-loaded polystyrene-polyvinyl pyridine reverse micelle solution on part of the hexagonal boron nitride film at the speed of 234 mu m/s, then heating for 2h in a hydrogen environment of 50sccm at 500 ℃, reducing the polystyrene-polyvinylpyridine reverse micelle loaded with the gold salt on the hexagonal boron nitride film to generate gold nanoparticles (AuNPs), obtaining a photosensitive layer on the surface of the substrate, wherein the photosensitive layer comprises a hexagonal boron nitride film and gold nanoparticles attached to the surface of part of the hexagonal boron nitride film, the particle size of the gold nanoparticles is 9-10 nm, the spacing distance between adjacent gold nanoparticles is 30-35 nm, and the area of the hexagonal boron nitride film attached with the gold nanoparticles accounts for 50% of the total area of the hexagonal boron nitride film.
(4) And depositing at two opposite ends of the surface of the photosensitive layer by adopting a magnetron sputtering method to obtain two strip gold/titanium electrodes, wherein one strip gold/titanium electrode is deposited on the surface of the hexagonal boron nitride film without the gold nanoparticles, the other strip gold/titanium electrode is deposited on the surface of the hexagonal boron nitride film with the gold nanoparticles, the gold/titanium electrodes comprise a gold layer and a titanium layer which are arranged in a laminated manner, the thickness of the gold layer is 100nm, the thickness of the titanium layer is 20nm, and the titanium layer is in contact with the photosensitive layer to obtain the deep ultraviolet photodetector (h-BN/AuNPs).
Fig. 3 is a Scanning Electron Microscope (SEM) photograph of the photosensitive layer in the deep ultraviolet photodetector prepared in example 2, which shows that the gold nanoparticles are uniformly compounded on the hexagonal boron nitride film.
Fig. 4 is a schematic structural diagram of the deep ultraviolet photodetector prepared in embodiment 2, which includes a substrate, a photosensitive layer disposed on a surface of the substrate, and two strip-shaped gold/titanium electrodes disposed at two opposite ends of the photosensitive layer, where the photosensitive layer includes a hexagonal boron nitride film and gold nanoparticles attached to a part of a surface of the hexagonal boron nitride film, one of the strip-shaped gold/titanium electrodes is disposed on a surface of the hexagonal boron nitride film to which no gold nanoparticles are attached, and the other strip-shaped gold/titanium electrode is disposed on a surface of the hexagonal boron nitride film to which gold nanoparticles are attached, that is, the deep ultraviolet photodetector provided in the present invention has an asymmetric structure.
Comparative example 1
Pretreating a quartz glass substrate according to the method in the step (2) in the embodiment 1, and then depositing on the surface of the substrate to obtain a hexagonal boron nitride film with the thickness of 200 nm;
and depositing two strip gold/titanium electrodes at two opposite ends of the surface of the hexagonal boron nitride film by adopting a magnetron sputtering method, wherein the gold/titanium electrodes comprise a gold layer and a titanium layer which are arranged in a laminated manner, the thickness of the gold layer is 100nm, the thickness of the titanium layer is 20nm, and the titanium layer is in contact with the hexagonal boron nitride film to obtain the deep ultraviolet photoelectric detector.
And (3) performance testing:
1. the performance of the deep ultraviolet photodetectors prepared in examples 1-2 was tested under dark conditions and 205nm ultraviolet irradiation, respectively, under ± 35V voltage conditions using a gishy 2450 digital source meter, and the obtained I-V curves are shown in fig. 5 and 6. FIG. 5 is an I-V plot of the deep UV photodetector of example 1 under dark conditions and 205nm UV illumination, showing that the device has a very low photoresponse when a forward voltage is applied; when a negative voltage is applied, the optical response of the device increases with the increase of the voltage, and when a voltage of-35V is applied, the dark current of the device is-8.87 multiplied by 10-8Ampere, current under 205nm excitation is-1.47X 10-7Ampere, indicating that the device has good photoresponse characteristics. FIG. 6 is an I-V plot of the deep UV photodetector of example 2 under dark conditions and 205nm UV illumination, showing that the device has a very small photoresponse when a negative voltage is applied; when a forward voltage is applied, the optical response of the device increases with the voltageLarge and increased, and dark current of the device is +7.06 × 10 when +35V voltage is applied-8Ampere, current at 205nm excitation + 1.77X 10-7Ampere, indicating that the device has good photoresponse characteristics.
2. The performance of the deep ultraviolet photodetectors prepared in examples 1-2 was tested under dark conditions and 330nm ultraviolet irradiation, respectively, under ± 35V voltage conditions using a gishy 2450 digital source meter, and the obtained I-V curves are shown in fig. 7 and 8. FIG. 7 is an I-V plot of the deep UV photodetector of example 1 under dark conditions and 330nm UV illumination, showing that the device has a very low photoresponse when a forward voltage is applied; when a negative voltage is applied, the optical response of the device increases with the increase of the voltage, and when a voltage of-35V is applied, the dark current of the device is-8.87 multiplied by 10-8Ampere, current under 330nm excitation is-1.55X 10-7Ampere, indicating that the device has good photoresponse characteristics. FIG. 8 is an I-V plot of the deep UV photodetector of example 2 under dark conditions and 330nm UV illumination, showing that the device has a very small photoresponse when a negative voltage is applied; when a forward voltage is applied, the optical response of the device increases with the increase of the voltage, and when a voltage of +35V is applied, the dark current of the device is +7.06 × 10-8Ampere, current at 330nm excitation + 1.19X 10-7Ampere, indicating that the device has good photoresponse characteristics.
3. The performance of the deep ultraviolet photodetectors prepared in examples 1-2 and comparative example 1 was tested under the conditions of 205nm (power density of 0.019 watt per square centimeter) and 330nm (power density of 0.044 watt per square centimeter) ultraviolet irradiation with an applied voltage of ± 35V and an illumination area of 0.25 square centimeter using a gicherie 2450 digital source meter, and the obtained responsivity histograms were shown in fig. 9 and 10. Fig. 9 is a histogram of responsivity of the deep ultraviolet photodetectors prepared in example 1 and comparative example 1 under the irradiation of ultraviolet light at 205nm and 330nm, and the specific data are shown in table 1. The results show that the photoresponse intensity of the device prepared in example 1 is 1.24 × 10 under 205nm uv irradiation-5Ampere/watt, much higher than the photoresponse intensity of the device in comparative example 1 (3.86X 10)-7Ampere/watt). Devices prepared in example 1 under 330nm UV irradiationHas a photoresponse intensity of 6.00X 10-6Ampere/watt which is less than the light response intensity under the irradiation of 205nm ultraviolet light, and indicates that the response wave band of the device is in a deep ultraviolet region; furthermore, the intensity of the photoresponse of the device of example 1 is much higher than that of the device of comparative example 1 (8.49X 10) at an excitation wavelength of 330nm-7Ampere/watt). Fig. 10 is a histogram of the responsivity of the deep ultraviolet photodetectors prepared in example 2 and comparative example 1 under the irradiation of ultraviolet light at 205nm and 330nm, and the specific data are shown in table 1. The results show that the photoresponse intensity of the device prepared in example 2 is 2.24X 10 under 205nm UV irradiation-5Ampere/watt, much higher than the photoresponse intensity of the device in comparative example 1 (3.86X 10)-7Ampere/watt). The photoresponse intensity of the device prepared in example 2 was 4.35X 10 under 330nm UV irradiation-6Ampere/watt which is less than the light response intensity under the irradiation of 205nm ultraviolet light, and indicates that the response wave band of the device is in a deep ultraviolet region; furthermore, the intensity of the photoresponse of the device of example 2 is much higher than that of the device of comparative example 1 at an excitation wavelength of 330nm (8.49X 10)-7Ampere/watt).
TABLE 1 photoresponse intensities of devices of examples 1-2 and comparative example 1 at different excitation wavelengths
As can be seen from fig. 9 and 10 and table 1, the dark current of the deep ultraviolet photodetector without the metal nanoparticles and the boron nitride nanosheets as the surface plasmon structure is large, and the responsivity to ultraviolet light is extremely low; the dark current of the deep ultraviolet photoelectric detector with the metal nano-particles and the boron nitride nano-sheets as the surface plasmon structure is reduced, and the responsivity is greatly improved.
4. The performance of the deep ultraviolet photodetectors prepared in examples 1-2 and comparative example 1 was tested at room temperature using a UNICO UV-2802S ultraviolet-visible absorption spectrometer, and fig. 11 is an ultraviolet-visible absorption spectrum diagram of the deep ultraviolet photodetectors prepared in examples 1-2 and comparative example 1 at room temperature, from fig. 11, it can be seen that the deep ultraviolet photodetectors prepared in examples 1-2 and comparative example 1 have excellent spectral selectivity to deep ultraviolet light, and do not absorb light in the visible to near infrared region (400-800 nm). Meanwhile, the light absorption of the deep ultraviolet photoelectric detector prepared in the embodiment 2 in the range of the deep ultraviolet wavelength (200-280 nm) is obviously enhanced.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A deep ultraviolet photoelectric detector comprises a dielectric insulating substrate, a photosensitive layer arranged on the surface of the dielectric insulating substrate, and two electrodes arranged at two opposite ends of the photosensitive layer;
the photosensitive layer comprises a hexagonal boron nitride film and a surface plasmon structure attached to the surface of part of the hexagonal boron nitride film, the hexagonal boron nitride film is in contact with the dielectric insulating substrate, one electrode is arranged on the surface of the hexagonal boron nitride film to which the surface plasmon structure is not attached, and the other electrode is arranged on the surface of the hexagonal boron nitride film to which the surface plasmon structure is attached;
the surface plasmon structure comprises a metal nanoparticle or a semiconductor nanostructure.
2. The deep ultraviolet photodetector of claim 1, wherein the hexagonal boron nitride film has a thickness of 100 to 500 nm.
3. The deep ultraviolet photodetector of claim 1, wherein the metal nanoparticles comprise gold, aluminum, silver, copper, or platinum.
4. The deep ultraviolet photodetector according to claim 1 or 3, wherein the metal nanoparticles have a particle size of 1 to 10nm, and the distance between adjacent metal nanoparticles on the surface of the hexagonal boron nitride thin film is 25 to 150 nm.
5. The deep ultraviolet photodetector of claim 1, wherein the semiconductor nanostructure comprises hexagonal boron nitride nanoplates.
6. The deep ultraviolet photodetector of claim 5, wherein the hexagonal boron nitride nanosheets have a lateral dimension of 1-45 μ ι η and a thickness of 0.3-2 μ ι η; the distance between adjacent hexagonal boron nitride nanosheets on the surface of the hexagonal boron nitride film is 1-20 microns.
7. The deep ultraviolet photodetector of claim 1, wherein the dielectric insulating substrate comprises a sapphire substrate, a quartz glass substrate, or a silicon oxide substrate.
8. The deep ultraviolet photodetector of claim 1, wherein the electrode is a metal electrode.
9. The method for preparing the deep ultraviolet photodetector as claimed in any one of claims 1 to 8, comprising the steps of:
depositing on the surface of a dielectric insulating substrate to obtain a hexagonal boron nitride film, preparing a surface plasmon structure on part of the surface of the hexagonal boron nitride film, and forming a photosensitive layer on the surface of the dielectric insulating substrate;
and arranging two electrodes at two opposite ends of the photosensitive layer, wherein one electrode is arranged on the surface of the hexagonal boron nitride film without the surface plasmon structure, and the other electrode is arranged on the surface of the hexagonal boron nitride film with the surface plasmon structure, so that the deep ultraviolet photoelectric detector is obtained.
10. The deep ultraviolet photodetector according to any one of claims 1 to 8 or the deep ultraviolet photodetector prepared by the preparation method according to claim 9 is applied to the fields of chemical environment monitoring, biological environment monitoring, missile plume, radiation detection, astronomical research or satellite communication.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210166042.7A CN114551626B (en) | 2022-02-22 | 2022-02-22 | Deep ultraviolet photoelectric detector and preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210166042.7A CN114551626B (en) | 2022-02-22 | 2022-02-22 | Deep ultraviolet photoelectric detector and preparation method and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114551626A true CN114551626A (en) | 2022-05-27 |
| CN114551626B CN114551626B (en) | 2024-01-26 |
Family
ID=81677971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210166042.7A Active CN114551626B (en) | 2022-02-22 | 2022-02-22 | Deep ultraviolet photoelectric detector and preparation method and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114551626B (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106395768A (en) * | 2016-11-01 | 2017-02-15 | 吉林大学 | Ultrathin boron nitride nanosheet synthesis method |
| CN107069417A (en) * | 2017-05-08 | 2017-08-18 | 东南大学 | A kind of phasmon Random Laser array device based on two-dimensional material |
| CN107164727A (en) * | 2017-06-05 | 2017-09-15 | 吉林大学 | A kind of adjustable BN of band gap（Al）Thin-film material and preparation method thereof |
| CN108231945A (en) * | 2018-01-03 | 2018-06-29 | 中国科学院半导体研究所 | Graphene/hexagonal boron nitride/graphene ultraviolet light detector and preparation method |
| CN110364584A (en) * | 2019-06-28 | 2019-10-22 | 厦门大学 | Deep ultraviolet MSM detector and preparation method based on local surface phasmon effect |
| CN111129225A (en) * | 2019-12-26 | 2020-05-08 | 重庆大学 | Ultraviolet photoelectric detector and preparation method thereof |
| CN111129186A (en) * | 2019-11-18 | 2020-05-08 | 中国科学院上海技术物理研究所 | Junction type photodetector of vanadium dioxide and two-dimensional semiconductor and preparation method thereof |
| CN111710750A (en) * | 2020-06-24 | 2020-09-25 | 吉林大学 | Deep ultraviolet photoelectric detector based on hexagonal boron nitride thick film and preparation method |
| US20200403111A1 (en) * | 2019-06-19 | 2020-12-24 | University Of Electronic Science And Technology Of China | Method for preparing ultrathin two-dimensional nanosheets and applications thereof |
| CN113517357A (en) * | 2021-04-19 | 2021-10-19 | 深圳网联光仪科技有限公司 | Molybdenum disulfide photoelectric detector and preparation method thereof |
-
2022
- 2022-02-22 CN CN202210166042.7A patent/CN114551626B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106395768A (en) * | 2016-11-01 | 2017-02-15 | 吉林大学 | Ultrathin boron nitride nanosheet synthesis method |
| CN107069417A (en) * | 2017-05-08 | 2017-08-18 | 东南大学 | A kind of phasmon Random Laser array device based on two-dimensional material |
| CN107164727A (en) * | 2017-06-05 | 2017-09-15 | 吉林大学 | A kind of adjustable BN of band gap（Al）Thin-film material and preparation method thereof |
| CN108231945A (en) * | 2018-01-03 | 2018-06-29 | 中国科学院半导体研究所 | Graphene/hexagonal boron nitride/graphene ultraviolet light detector and preparation method |
| US20200403111A1 (en) * | 2019-06-19 | 2020-12-24 | University Of Electronic Science And Technology Of China | Method for preparing ultrathin two-dimensional nanosheets and applications thereof |
| CN110364584A (en) * | 2019-06-28 | 2019-10-22 | 厦门大学 | Deep ultraviolet MSM detector and preparation method based on local surface phasmon effect |
| CN111129186A (en) * | 2019-11-18 | 2020-05-08 | 中国科学院上海技术物理研究所 | Junction type photodetector of vanadium dioxide and two-dimensional semiconductor and preparation method thereof |
| CN111129225A (en) * | 2019-12-26 | 2020-05-08 | 重庆大学 | Ultraviolet photoelectric detector and preparation method thereof |
| CN111710750A (en) * | 2020-06-24 | 2020-09-25 | 吉林大学 | Deep ultraviolet photoelectric detector based on hexagonal boron nitride thick film and preparation method |
| CN113517357A (en) * | 2021-04-19 | 2021-10-19 | 深圳网联光仪科技有限公司 | Molybdenum disulfide photoelectric detector and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114551626B (en) | 2024-01-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Salman et al. | Effective conversion efficiency enhancement of solar cell using ZnO/PS antireflection coating layers | |
| TWI431130B (en) | Copper delafossite transparent p-type semiconductor: methods of manufacture and applications | |
| Huang et al. | Core–shell structure of zinc oxide/indium oxide nanorod based hydrogen sensors | |
| Gao et al. | ZnO nanorods/plates on Si substrate grown by low-temperature hydrothermal reaction | |
| Bayansal et al. | CuO nanostructures grown by the SILAR method: influence of Pb-doping on the morphological, structural and optical properties | |
| Deng et al. | Surface plasma treatment reduces oxygen vacancies defects states to control photogenerated carriers transportation for enhanced self-powered deep UV photoelectric characteristics | |
| US20150034160A1 (en) | Thin film photovoltaic device and method of making same | |
| Mondal et al. | Investigation of optical and electrical properties of erbium-doped TiO 2 thin films for photodetector applications | |
| Ayhan et al. | Photoresponsivity of silver nanoparticles decorated graphene–silicon Schottky junction | |
| Zhu et al. | Structure and photocatalytic properties of TiO2/Cu3N composite films prepared by magnetron sputtering | |
| Okamoto et al. | Passivation of defects in nitrogen-doped polycrystalline Cu 2 O thin films by crown-ether cyanide treatment | |
| Hussain et al. | Length dependent performance of Cu2O/ZnO nanorods solar cells | |
| Shet | Zinc oxide (ZnO) nanostructures for photoelectrochemical water splitting application | |
| Otieno et al. | Effect of thermal treatment on ZnO: Tb 3+ nano-crystalline thin films and application for spectral conversion in inverted organic solar cells | |
| CN108031832B (en) | Platinum group alloy nano-particles with porous structure and preparation method thereof | |
| Steffy et al. | Hierarchical rutile TiO2 heterostructures and plasmon impregnated TiO2/SnO2-Ag bilayer nanocomposites as proficient photoanode systems | |
| CN114551626B (en) | Deep ultraviolet photoelectric detector and preparation method and application thereof | |
| Cai et al. | Enhancement of photoelectrochemical performance of Ag@ ZnO nanowires: experiment and mechanism | |
| Maistruk et al. | Optical properties of thin films CZTSe produced by RF magnetron sputtering and thermal evaporation | |
| Wang et al. | Investigation of the photoreactivity of nanocrystalline TiO2 thin film by ion-implantation technique | |
| CN108004506B (en) | A kind of noble metal nano particles and preparation method thereof based on In alloy | |
| Fang et al. | Plasmonic Au@ Ag-upconversion nanoparticle hybrids for NIR photodetection via an alternating self-assembly method | |
| CN116240496A (en) | Method for regulating and controlling local surface plasmon resonance based on alloy nanoparticles | |
| Patwary et al. | Effect of nitrogen doping on structural, electrical, and optical properties of CuO thin films synthesized by radio frequency magnetron sputtering for photovoltaic application | |
| Farhadian-Azizi et al. | Optical monitoring of DC/RF plasma sputtering for copper oxide film growth at low temperature |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |