CN102185025A - Manufacturing process of metal waveguide microcavity optical coupling structure used for photoelectric functional devices - Google Patents
Manufacturing process of metal waveguide microcavity optical coupling structure used for photoelectric functional devices Download PDFInfo
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Abstract
The invention discloses a manufacturing process of a metal waveguide microcavity optical coupling structure used for photoelectric functional devices. The manufacturing process can greatly improve the optical coupling efficiency of the photoelectric functional devices. The key point of the manufacturing process is that a transitional substrate material is used to realize preparing the metal structures on the upper and lower surfaces of the film of the functional device; and the film preparation of the functional device and the transfer among different substrate materials can be realized through a two-layer paraffin wax technology. The manufacturing process has wide generality, the thickness of the film of the functional device ranges from hundred nanometer to hundred micrometer, the feature size of the metal optical coupling structure ranges from nanometer scale (electron beam photoetching) to micrometer scale (ultraviolet photoetching), and the responsive incident light ranges from visible to terahertz wave band. The embodiment of a long-wave quantum well infrared detector shows that the manufacturing process can optimize the spectral response of the device and greatly improve the infrared response ratio of the device.
Description
Technical field
The present invention relates to a kind of manufacture craft of metal waveguide microcavity optical coupling structure, be specifically related to a kind of technology that is used for the metal waveguide microcavity optical coupling structure of photoelectric functional device, it is applicable to visible light, and is infrared, and even the optical coupling structure of terahertz wave band is made.
Background technology
Surface plasma is the electromagnetic wave of propagating along the metallic conductor surface, it is " local " electromagentic resonance pattern that the free electron of incident electromagnetic field and metal surface intercouples and forms, sometimes also be called surface plasma excimer (Surface plasmon polaritons, SPPs).The metal surface free electron is collective's coherent oscillation under the excitation of incident electromagnetic field, and this interaction has produced SPPs and given the character of its uniqueness: surperficial local and near field strengthen.Original of the strength ratio of SPPs local fields can have the lifting of the order of magnitude and can break through diffraction limit, transmits electromagnetic wave in inferior (optics) wavelength structure.
Since the metal surface phasmon is found, there have been a lot of groups to utilize the metallic surface phasmon to strengthen the optical coupling of semiconductor photoelectric device in the world.SPPs is used for photoelectric device, is generally at device surface and forms the layer of metal structure, excites down at incident light, and the metal surface forms SPPs makes the photoelectricity coupling become possibility.Its photoelectricity coupling efficiency has bigger improvement than traditional microstrip antenna, the efficiency of light absorption of device traditional photonic crystal optical coupling structure based on dielectric material of also can comparing.Shortcoming based on the individual layer optical coupling structure of SPPs is, SPPs intensity is the e exponential damping on the direction of growth of material, and material only is confined near the metallic surface effective absorption of light.For the efficiency of light absorption of further reinforcing material, be necessary the SPPs optical coupling structure is also introduced the micro-cavity wave-guide structure of traditional optical, promptly respectively form the layer of metal structure on the upper and lower surface of function element.Incident light is introduced into by the SPPs effect and local forms standing wave in the metal microcavity, and the light absorbing zone of device can repeatedly absorb the incident light in the microcavity, and reinforcing material is to efficiency of light absorption greatly.
Summary of the invention
The purpose of this invention is to provide a kind of manufacturing process that on the photoelectric device material, forms the metal microcavity, make metal microcavity optical coupling technology, strengthen the coupling efficiency of photoelectric device greatly from the theoretical steering practical application.
The photoresponse wave band of conventional photoelectric functional device generally arrives near-infrared, middle LONG WAVE INFRARED at visible light.At the light of this wave band through after the refraction of photoelectric functional material, the optical wavelength of material internal generally in hundred nanometers to micron dimension, thereby be used for the metal microcavity thickness of optical coupling also must be in micron dimension.Photoelectric functional material GaAs with routine is an example, and the backing material of device is generally thick at 200-500um, and the effective thickness of device function material is generally at 0.1-10um.In order to form the metal microcavity, the backing material of device must be peeled off and form function element film, the layer of metal optical coupling structure of respectively growing on the upper and lower surface of function element film then.Because the material of micron thickness is highly brittle, be easy to fracture, the film of metal microcavity optical coupling also must be introduced suitable base material as support.The functional material film sticks in the manufacturing process of metal waveguide microcavity in the transition substrate, transfers to after completing on the final base material that is fit to the device package measurement again.
At above-mentioned requirements, the manufacturing process that we have proposed to utilize double-deck paraffin auxiliary substrate to shift mainly is to have utilized the characteristic that paraffin can be bonding with the device high-flatness after thawing, has guaranteed that the function element film is excellent in the prepared process.Manufacturing process main points of the present invention following (as shown in Figure 1, detailed step is seen embodiment):
1. at first prepare to finish and do not have the photoelectric functional of optical coupling structure device cell.
2. the upper surface at function element prepares layer of metal structure 1.The preparation method can adopt conventional thermal evaporation method.
Next the technology emphasis that will solve be how after device is thinned to micron thickness (thickness depends on the structure of function element at 0.1 to 10 micron) the device film transfer is evaporated layer of metal again in the evaporation of metal system.We take following method:
A) get the transition base material 2 of a slice surfacing,, be bonded at the surface of function element with one deck microcrystalline wax 3 as GaAs substrate slice or silicon chip.
B) transition base material 2 and function element are adhered to together on the frosted glass 9 of surfacing so that carry out the preparation of device film with common paraffin 4.At this moment the backing material of function element can be removed the backing material of device fully by the technology of attenuate and polishing up, obtains function element film 5.
C) common paraffin layer 4 is removed, made transition base material 2 and function element film 5 take off from frosted glass 9 together.
D) this moment, function element film 5 was sticked on the transition base material 2 by microcrystalline wax layer 3, can put into the cavity of evaporated metal, and evaporation layer of metal structure 6 promptly forms the metal microcavity.
4. the surface of function element film 5 was covered by transition base material 2 and microcrystalline wax layer 3 after above technology was finished, and caused device to measure.Our solution is:
A) on structured metal layer 6, be coated with last layer colloid 7, be stained with the final base material 8 that is fit to the function element measurement, be lower than paraffin melting point and solidify colloid.Final base material is chosen according to colloid 7.As get colloid 7 and be ultra-violet curing glue, then final base material 8 can be jewel sheet, the quartz plate of printing opacity.
B) peel off the transition base material 2 of being with wax, microcrystalline wax layer 3 is removed totally, promptly form the photoelectric functional device of metal microcavity efficiency light coupling, as shown in Figure 1.
The core of whole metal microcavity manufacturing process is again in the lower surface growth layer of metal of film and don't can damage the function element film after top layer metal preparation is finished.The present invention utilizes paraffin to melt the back high-flatness, and the characteristic that heating and melting is removed is carried out the transfer of substrate support material, and the surface of function element is well protected by paraffin in technical process, is not subjected to the influence of subsequent technique processing procedure.Because paraffin has the branch of high-melting-point and low melting point, we can adopt low-melting common paraffin between transition base material and frosted glass (being used for substrate thinning), between transition base material and function element film, use dystectic microcrystalline wax, can be smoothly after the film preparation of assurance function device is finished take off with frosted glass from polishing, and film still good adhesion on the transition base material.Dystectic microcrystalline wax has guaranteed that also the function element film is still excellent when the thermal evaporation metal level.
Manufacturing process of the present invention does not have specific (special) requirements to the material of photoelectric functional device, go for any photoelectric functional device, the device architecture that all available metal surface phasmons carry out the photoelectricity coupling all is applicable to this manufacturing process, comprise quantum trap infrared detector spare, solar battery thin film, LED and laser light ballistic device etc.This manufacturing process does not have specific (special) requirements for lambda1-wavelength, make the metal optical coupling structure for the method that visible light can utilize electron beam lithography to add the electronics beam evaporation, can add electron beam evaporation method formation metal structure with the ultraviolet photolithographic of routine for infrared light and even terahertz wave band, thereby will broad prospect of application be arranged at numerous areas such as photon detection, light emission, micro-imagings.
Description of drawings
Fig. 1 is the technology point schematic diagram of device of the present invention, utilizes transition base material and two-layer paraffin to realize the preparation of the metal structure on the preparation of function element film and upper and lower surface.Metal waveguide microcavity shown in the figure partly is the device film that is thinned to micron thickness.Numbering counter structure among the figure is as follows:
(1) structured metal layer;
(2) transition base material;
(3) microcrystalline wax layer;
(4) common paraffin layer;
(5) function element film;
(6) structured metal layer;
(7) glue;
(8) final base material;
(9) attenuate frosted glass.
Fig. 2 is the detailed process processing procedure of metal waveguide microcavity, and the unit component that never prepares optical coupling structure begins, and utilizes transition base material and two-layer paraffin progressively to realize metal waveguide microcavity optical coupling structure.Among the figure:
The 21:GaAs substrate;
22:Al
0.45Ga
0.55As, corrosion barrier layer;
23:n-GaAs lower electrode layer, silicon doping concentration are 2.5E17cm
-3
The Al in 24:4 cycle
0.15Ga
0.85The As/GaAs quantum well layer;
25:n-GaAs lower electrode layer, silicon doping concentration are 2.5E17cm
-3
The 26:AuGeNi/Au metal electrode;
27:Au metal grating layer;
28: the microcrystalline wax layer;
29: the transition substrate material layer;
30: common paraffin layer;
31: attenuated polishing frosted glass;
The 32:Au metal level;
33: the normal temperature cure glue-line;
34: final substrate material layer.
The quantum well table top of Fig. 2-1 for etching;
Fig. 2-2 is for preparing the quantum well table top of metal electrode up and down;
Fig. 2-3 is for further to prepare metal grating structure in the quantum well mesa surfaces;
Fig. 2-4 is for to adhere to the quantum well table top on the transition base material with microcrystalline wax;
Fig. 2-5 is for to adhere to the transition base material again on the frosted glass so that attenuate with common paraffin;
Fig. 2-6 is attenuate, polished quantum well thin-film;
Fig. 2-7 removes only remaining transition base material and quantum well thin-film with frosted glass and paraffin layer;
Fig. 2-8 is in the bottom of quantum well thin-film evaporation layer of metal;
Fig. 2-9 is glued to final base material (quartz plate) on the quantum well thin-film;
Fig. 2-10 adds heat abstraction microcrystalline wax layer and transition substrate material layer, finishes metal waveguide microcavity technology.
Fig. 3 is the optogalvanic spectra contrast of metal waveguide microcavity optical coupling structure and 45 degree angle lap quantum well devices, and optogalvanic spectra is measured by FTIS.
The infrared response contrast of Fig. 4 metal waveguide microcavity optical coupling structure and 45 degree angle lap quantum well devices, the measurement temperature of device is 35K, and blackbody temperature is 1000K, and other measuring conditions also are consistent.
Embodiment
We specify the manufacturing process in the summary of the invention with the example that is applied as of metal microcavity optical coupling manufacturing process at quantum well Long Wave Infrared Probe spare.But notice that this manufacturing process is not only applicable to quantum trap infrared detector spare, can also be widely used in other photoelectric devices.
Quantum trap infrared detector based on GaAs/AlGaAs has important use in the infrared acquisition field, and aspect the long wave detection, quantum trap infrared detector is traditional strong competitor of cadmium-telluride-mercury infrared detector.Yet according to quantum mechanics dipole transition rule, have only electric vector could be absorbed by quantum well perpendicular to the incident light of Multiple Quantum Well aufwuchsplate, produce photo-generated carrier, and the light of normal incidence can not be absorbed basically by quantum well, quantum efficiency is very low.Therefore, must adopt suitable optical coupling measure to increase quantum well infrared quantum efficiency.We wish to utilize metal microcavity technology to make incident light form a series of similar Fabry-Perot resonance mode at quantum well layer, metal SPPs is absorbed by quantum well in the communication process in the Fabry resonant cavity back and forth, thereby has improved the coupling efficiency of quantum trap infrared detector greatly.
The quantum-well materials structure that we adopt following (adopting the molecular beam epitaxial method growth): backing material is a GaAs substrate 21, growth 300nm Al on backing material
0.45Ga
0.55As is as corrosion barrier layer 22, continued growth 290nm then, and silicon doping concentration is 2.5E17cm
-3N-GaAs lower electrode layer 23, the quantum well layer 24 in 4 cycles of then growing: potential barrier is the Al of 60nm
0.15Ga
0.85As, potential well is that (3.5nm is silicon doping in the middle of the potential well, and concentration is 2.5E17cm for the n-GaAs of 6.5nm
-3), at the n-GaAs upper electrode layer 25 of growth 290nm, silicon doping concentration is 2.5E17cm at last
-3Upper electrode layer is to the about 900nm of the gross thickness of lower electrode layer, and the response wave length of design is in the 15um LONG WAVE INFRARED.
For above-mentioned material, the design thickness of metal microcavity is 900nm, and response wave length is the incident light of 15um.Utilize RSoff software to adopt metal surface plasma body near-field effect and microstrip antenna theory to simulate, we draw metal microcavity upper strata metal grating structure: cycle d=10.8um, cutting width a=3.0um, metal level adopts gold (Au) film of 200nm thickness.
The concrete process implementing of the quantum trap infrared detector that the metal microcavity strengthens is as follows:
1. utilize photoetching and wet corrosion technique, produce the quantum well table top, shown in Fig. 2-1.
2. thermal evaporation growth AuGeNi/Au is total to 600nm on table top, prepares metal electrode 26 up and down, shown in Fig. 2-2.
On the n-GaAs of device layer 25 by the photoetching raster graphic, the electron beam evaporation metal is peeled off three steps of cutting metal growth Au metal level 27, shown in Fig. 2-3.The cycle d=10.8um of metal level, cutting width a=3.0um, golden thickness are 200nm.
4. be coated with one deck microcrystalline wax layer 28 on metal level 26,27, be stained with transition base material 29, getting the transition base material here is GaAs substrate slice 29, shown in Fig. 2-4.Microcrystalline wax layer 28 adopts dystectic microwax.
5. on transition base material (GaAs substrate slice) 29, be coated with the common paraffin layer 30 of last layer, and then on paraffin, be stained with frosted glass 31, shown in Fig. 2-5.
6. utilize attenuate and chemical-mechanical polisher that the substrate layer 21 of device is reduced to about 20um, the substrate layer 21 of the complete removal devices of corrosion barrier layer 22 usefulness caustic solutions that utilizes device then is up to corrosion barrier layer 22.Utilize at last the hydrofluoric acid removal devices corrosion barrier layer 22, shown in Fig. 2-6.
7. utilize heating or dewax agent to remove frosted glass 31 and common paraffin layer 30, shown in Fig. 2-7.
8. this moment, the function element film was sticked in the transition substrate 29 by microcrystalline wax layer 28.Utilize electron beam evaporation or thermal evaporation to deposit layer of metal layer 32 on the lower electrode layer 23 of device, golden thick 200nm is shown in Fig. 2-8.
9. be coated with one deck normal temperature cure glue 33 on metal level 32 tops, be stained with final base material 34 then, shown in Fig. 2-9.Here we choose glue 33 and are the ultra-violet curing glue of heat conduction, and final base material is a quartz plate 34.
10. last heating or dewax agent removal microcrystalline wax layer 28 and the transition base material 29 of utilizing can obtain the quantum trap infrared detector spare that the metal microcavity strengthens, shown in Fig. 2-10.
After the device preparation of microcavity coupling was finished, we had carried out the black matrix response measurement.For the measurement of the quantum well unit component of routine, people do not prepare grating usually, quantum well devices is carried out 45 degree angle laps measure its responsiveness and detectivity but adopt.In order to show the advantage of the relative 45 degree angle lap devices of microcavity coupling quantum well device in optical coupling intuitively, we have compared the two optogalvanic spectra and the response of the black matrix under the 1000K (the measurement temperature is 35K).Two devices are in identical measuring condition during measurement.Fourier changes concrete outcome that infrared spectrometer obtains optogalvanic spectra as shown in Figure 3, and spectral intensity has been carried out normalization.1000K black matrix response results recomputates the photoelectric current that obtains device with the phase-locked signal that obtains as shown in Figure 4.
As shown in Figure 3, the quantum well spectrum of metal microcavity coupling is narrower, and halfwidth is less than 2um, much smaller than the 7um halfwidth of 45 degree angle lap devices.The halfwidth broad of 45 degree angle lap devices, should be the material growth quality relatively poor due to, but through after the microcavity optical coupling, the halfwidth of new unit is reduced to less than 2um, has improved the spectral quality of device greatly.Therefore microcavity coupling technique technology can be so that relatively poor material be applied to actual infrared acquisition, and is significant.
By figure four as can be known, the peak value infrared response of the quantum well of metal microcavity coupling is more than 5 times of 45 degree angle lap quantum well, improved the infrared response of device greatly, show that the metal microcavity has very strong local effect to incident light, make incident light fully be absorbed, strengthened the photoelectricity coupling efficiency of device by quantum well.Above-described embodiment is only in order to illustrate technological thought of the present invention and characteristics; its purpose is to enable those skilled in the art to understand content of the present invention and implement according to this; scope of the present invention not only is confined to above-mentioned specific embodiment; be all equal variation or modifications of doing according to disclosed spirit, still be encompassed in protection scope of the present invention.
Claims (1)
1. technology manufacture method that is used for the metal waveguide microcavity optical coupling structure of photoelectric functional device is characterized in that may further comprise the steps:
1) at first preparation is finished and is not had the photoelectric functional of optical coupling structure device cell;
2) on the photoelectric functional device cell surface that completes, adopt conventional thermal evaporation method to prepare layer of metal structure (1)
3) by following a)-d) step the device film transfer is evaporated layer of metal in the evaporation of metal system again and forms the metal waveguide microcavity:
A) get the transition base material (2) of a slice surfacing,, be bonded at the surface of function element with one deck microcrystalline wax (3) as GaAs substrate slice or silicon chip;
B) with common paraffin (4) transition base material (2) and function element are adhered to the frosted glass (9) of surfacing together upward so that carry out the preparation of device film, at this moment the backing material of function element up, technology by attenuate and polishing can be removed the backing material of device fully, obtains the function element film
(5), the thickness of function element film (5) depends on used material between the 0.1-10 micron;
C) common paraffin layer (4) is removed, made transition base material (2) and function element film (5) take off from frosted glass (9) together;
D) function element film this moment (5) is sticked on the transition base material (2) by microcrystalline wax layer (3), can put into the cavity of evaporated metal, and evaporation layer of metal structure (6) promptly forms the metal microcavity;
4) on metal level (6), be coated with last layer colloid (7), be stained with the final base material (8) that is fit to the function element measurement and peel off transition base material (2) and paraffin layer (3), promptly form the photoelectric functional device of metal microcavity efficiency light coupling, if colloid (7) is a ultra-violet curing glue, then final base material (8) adopts the material of jewel sheet or quartz plate printing opacity.
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| CN103000766A (en) * | 2012-12-10 | 2013-03-27 | 中国电子科技集团公司第十一研究所 | Method for scribing bonding of infrared focal plane detector indium bump |
| CN103050591A (en) * | 2011-10-14 | 2013-04-17 | 中国科学院物理研究所 | Surface plasmon electro excitation source and manufacturing method thereof |
| CN103762220A (en) * | 2014-01-17 | 2014-04-30 | 中国科学院上海技术物理研究所 | High-linearity degree-of-polarization quantum-well infrared detector with plasmon micro-cavity coupled structure |
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| CN103050591A (en) * | 2011-10-14 | 2013-04-17 | 中国科学院物理研究所 | Surface plasmon electro excitation source and manufacturing method thereof |
| CN103000766A (en) * | 2012-12-10 | 2013-03-27 | 中国电子科技集团公司第十一研究所 | Method for scribing bonding of infrared focal plane detector indium bump |
| CN103762220A (en) * | 2014-01-17 | 2014-04-30 | 中国科学院上海技术物理研究所 | High-linearity degree-of-polarization quantum-well infrared detector with plasmon micro-cavity coupled structure |
| CN106409818A (en) * | 2016-10-17 | 2017-02-15 | 北京工业大学 | Method of acquiring flexible ferroelectric thin film capacitor nondestructively |
| CN106409818B (en) * | 2016-10-17 | 2019-01-22 | 北京工业大学 | A kind of method that non-destructive obtains flexible ferroelectric capacitor |
| CN108400239A (en) * | 2018-01-22 | 2018-08-14 | 华南师范大学 | A kind of planarizing process method and its application of flexible thin-film material |
| CN111525392A (en) * | 2020-04-29 | 2020-08-11 | 中国人民解放军国防科技大学 | Gain device based on micro-nano structure semiconductor thin film and laser |
| CN111525392B (en) * | 2020-04-29 | 2021-04-27 | 中国人民解放军国防科技大学 | Gain device based on micro-nano structure semiconductor thin film and laser |
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