CN103000766A - Method for scribing bonding of infrared focal plane detector indium bump - Google Patents
Method for scribing bonding of infrared focal plane detector indium bump Download PDFInfo
- Publication number
- CN103000766A CN103000766A CN2012105293550A CN201210529355A CN103000766A CN 103000766 A CN103000766 A CN 103000766A CN 2012105293550 A CN2012105293550 A CN 2012105293550A CN 201210529355 A CN201210529355 A CN 201210529355A CN 103000766 A CN103000766 A CN 103000766A
- Authority
- CN
- China
- Prior art keywords
- detector
- sheet substrate
- scribing
- ultra
- jewel sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention discloses a method for scribing bonding of an infrared focal plane detector indium bump. The method comprises steps of coating photoresist to one side of a detector, on which an indium bump grows on, and conducting curing; evenly coating ultraviolet curing adhesive glue to a transparent gem piece substrate; placing one side of the detector, on which the photoresist is not coated, to the gem piece substrate on which the ultraviolet curing adhesive glue is coated; irradiating the gem piece substrate by using ultraviolet rays with a preset exposure value, and fixing the detector to the gem piece substrate through the ultraviolet curing adhesive glue; and placing the detector and the gem piece substrate to an acetone solution for thermal desorption after scribing. According to the method, the process that paraffin is cleaned after being fixed is omitted, and the damage for the detector indium bump during the paraffin cleaning is avoided.
Description
Technical field
The present invention relates to photoelectric field, relate in particular to a kind of scribing adhering method of infrared focal plane detector indium post.
Background technology
At present, the flip-chip interconnection of infrared focal plane detector can be divided into two kinds on principle: a kind of is a single indium pole interconnection at reading circuit end growth indium post; Another kind is all the grow two-sided indium pole interconnection of indium post of detector end and reading circuit end.For large face battle array device, when the indium post height of independent reading circuit end originally has been not enough to remedy detector and reading circuit and has been bonded together machine itself aim at leveling when especially exerting pressure the space nonparallelism and the inhomogeneities of power.Increase indium post height and must adopt at also the grow two-sided indium interconnection mode of indium post of detector end, increase interconnection nonparallelism tolerance and successfully interconnect realizing.
Originally the detector end indium post of not growing can use the cotton wiping device back side to remove original bonding employed paraffin in the complete technique of developing a film of scribing.And behind detector end growth indium post, the mode of developing a film of scribing is originally carried out wiping to detector, can damage positive indium post.
Summary of the invention
In view of above-mentioned analysis, the present invention aims to provide a kind of scribing adhering method of infrared focal plane detector indium post, when cleaning after existing paraffin is pasted in order to solve to the problem of detector injury.
Purpose of the present invention mainly is achieved through the following technical solutions:
A kind of scribing adhering method of infrared focal plane detector indium post, the method comprises:
There is a side of indium post to apply photoresist the detector growth, and is cured;
On transparent jewel sheet substrate, evenly apply the ultra-violet curing bonded adhesives;
Not having resist coating one side to be placed on described detector is coated with on the described jewel sheet substrate of ultra-violet curing bonded adhesives;
Shine described jewel sheet substrate with the ultraviolet ray of predetermined exposure value, described detector is fixed on the described jewel sheet substrate by the ultra-violet curing bonded adhesives;
Scribing places acetone soln to add thermal desorption described detector and described jewel sheet substrate after finishing.
Preferably, the thickness of the photoresist that one side of indium post applies is arranged is 1 ~ 2 millimeter to the growth of described detector.
Preferably, described ultra-violet curing bonded adhesives is TempLoc series.
Preferably, described predetermined exposure value is 1000mJ/cm
2-5000mJ/cm
2
Preferably, the temperature of described acetone soln is the 40-70 degree, and soak time is 5-30 minute.
Beneficial effect of the present invention is as follows:
The invention provides a kind of scribing adhering method of infrared focal plane detector indium post, detector sticks on the described jewel sheet substrate by the ultra-violet curing bonded adhesives that is coated on the jewel sheet substrate, realize the fixing of detector and jewel sheet substrate by the ultraviolet ray irradiation again, after scribing finishes, detector and jewel sheet substrate be placed in the acetone soln soak, make detector and jewel sheet substrate nature desorption, saved fixing by paraffin after the step of wiping paraffin, effectively avoided in the wiping paraffin process damage to detector indium post.
Other features and advantages of the present invention will be set forth in the following description, and becoming apparent from specification of part perhaps understood by implementing the present invention.Purpose of the present invention and other advantages can realize and obtain by specifically noted structure in the specification of writing, claims and accompanying drawing.
Description of drawings
Fig. 1 is the flow chart of scribing adhering method of the infrared focal plane detector indium post of the embodiment of the invention.
Embodiment
Specifically describe the preferred embodiments of the present invention below in conjunction with accompanying drawing, wherein, accompanying drawing consists of the application's part, and is used for explaining together with embodiments of the present invention principle of the present invention.For clear and simplification purpose, when it may make theme of the present invention smudgy, with specifying in detail of known function and structure in the omission device described herein.
The embodiment of the invention provides a kind of scribing adhering method of infrared focal plane detector indium post, and referring to Fig. 1, the method comprises:
S101, there is a side of indium post to apply photoresist detector growth, and is cured;
Wherein, the thickness of the photoresist that one side of indium post applies is arranged is 1 ~ 2 millimeter to the growth of described detector.
S102, on transparent jewel sheet substrate, evenly apply the ultra-violet curing bonded adhesives;
Described ultra-violet curing bonded adhesives is TempLoc series.
S103, do not have resist coating one side to be placed on described detector to be coated with on the described jewel sheet substrate of ultra-violet curing bonded adhesives;
S104, shine described jewel sheet substrate with the ultraviolet ray of predetermined exposure value, described detector is fixed on the described jewel sheet substrate by the ultra-violet curing bonded adhesives;
Described predetermined exposure value is 1000mJ/cm
2-5000mJ/cm
2
After S105, scribing finish, place acetone soln to add thermal desorption described detector and described jewel sheet substrate.
The temperature of described acetone soln is the 40-70 degree, and soak time is 5-30 minute.
The scribing adhering method of a kind of infrared focal plane detector indium post that the embodiment of the invention provides, detector sticks on the described jewel sheet substrate by the ultra-violet curing bonded adhesives that is coated on the jewel sheet substrate, realize the fixing of detector and jewel sheet substrate by the ultraviolet ray irradiation again, after scribing finishes, detector and jewel sheet substrate be placed in the acetone soln soak, make detector and jewel sheet substrate nature desorption, saved fixing by paraffin after the step of wiping paraffin, effectively avoided in the wiping paraffin process damage to detector indium post.
Jewel sheet substrate is used for applying the ultra-violet curing bonded adhesives, and will have the detector of resist coating one side to stick on the ultra-violet curing bonded adhesives;
It is 1 ~ 2 millimeter that the growth of described detector has the thickness of the photoresist that a side of indium post applies.
Described ultra-violet curing bonded adhesives is TempLoc series.
The ultraviolet irradiation case is used for shining described jewel sheet substrate with the ultraviolet ray of predetermined exposure value, and described detector is fixed on the described jewel sheet substrate by the ultra-violet curing bonded adhesives;
Described predetermined exposure value is 1000mJ/cm
2-5000mJ/cm
2
Container is used for holding acetone soln, after scribing finishes, places acetone soln to add thermal desorption described detector and described jewel sheet substrate.
In sum, the embodiment of the invention provides a kind of scribing adhering method of infrared focal plane detector indium post, detector sticks on the described jewel sheet substrate by the ultra-violet curing bonded adhesives that is coated on the jewel sheet substrate, realize the fixing of detector and jewel sheet substrate by the ultraviolet ray irradiation again, after scribing finishes, detector and jewel sheet substrate be placed in the acetone soln soak, make detector and jewel sheet substrate nature desorption, saved fixing by paraffin after the step of wiping paraffin, effectively avoided in the wiping paraffin process damage to detector indium post.
The above; only for the better embodiment of the present invention, but protection scope of the present invention is not limited to this, anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (5)
1. the scribing adhering method of an infrared focal plane detector indium post is characterized in that, comprising:
There is a side of indium post to apply photoresist the detector growth, and is cured;
On transparent jewel sheet substrate, evenly apply the ultra-violet curing bonded adhesives;
Not having resist coating one side to be placed on described detector is coated with on the described jewel sheet substrate of ultra-violet curing bonded adhesives;
Shine described jewel sheet substrate with the ultraviolet ray of predetermined exposure value, described detector is fixed on the described jewel sheet substrate by the ultra-violet curing bonded adhesives;
Scribing places acetone soln to add thermal desorption described detector and described jewel sheet substrate after finishing.
2. method according to claim 1 is characterized in that, it is 1 ~ 2 millimeter that the growth of described detector has the thickness of the photoresist that a side of indium post applies.
3. method according to claim 1 is characterized in that, described ultra-violet curing bonded adhesives is TempLoc series.
4. method according to claim 1 is characterized in that, described predetermined exposure value is 1000mJ/cm
2-5000mJ/cm
2
5. method according to claim 1 is characterized in that, the temperature of described acetone soln is the 40-70 degree, and soak time is 5-30 minute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210529355.0A CN103000766B (en) | 2012-12-10 | 2012-12-10 | The scribing adhering method of infrared focal plane detector indium post |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210529355.0A CN103000766B (en) | 2012-12-10 | 2012-12-10 | The scribing adhering method of infrared focal plane detector indium post |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103000766A true CN103000766A (en) | 2013-03-27 |
| CN103000766B CN103000766B (en) | 2016-01-20 |
Family
ID=47929112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210529355.0A Active CN103000766B (en) | 2012-12-10 | 2012-12-10 | The scribing adhering method of infrared focal plane detector indium post |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103000766B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103985784A (en) * | 2014-04-18 | 2014-08-13 | 中国电子科技集团公司第十一研究所 | Polishing and chamfering method for semiconductor chip |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6080987A (en) * | 1997-10-28 | 2000-06-27 | Raytheon Company | Infrared-sensitive conductive-polymer coating |
| US20070001116A1 (en) * | 2005-06-29 | 2007-01-04 | Hayes Robert S | Thermal infrared image detector |
| CN101297403A (en) * | 2005-09-22 | 2008-10-29 | 富士胶片株式会社 | Method for cutting solid-state image pickup device |
| CN101728403A (en) * | 2009-11-18 | 2010-06-09 | 中国科学院上海技术物理研究所 | Back-illuminated mercury cadmium telluride long-wave light-guide type infrared flat-panel detector |
| CN101728450A (en) * | 2009-11-18 | 2010-06-09 | 中国科学院上海技术物理研究所 | High duty ratio tellurium cadmium mercury long-wave infrared conductive array detector |
| CN102185025A (en) * | 2011-04-01 | 2011-09-14 | 中国科学院上海技术物理研究所 | Manufacturing process of metal waveguide microcavity optical coupling structure used for photoelectric functional devices |
| CN102544217A (en) * | 2012-01-16 | 2012-07-04 | 中国电子科技集团公司第十一研究所 | Large-scale indium column generation method for infrared focal plane detector |
-
2012
- 2012-12-10 CN CN201210529355.0A patent/CN103000766B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6080987A (en) * | 1997-10-28 | 2000-06-27 | Raytheon Company | Infrared-sensitive conductive-polymer coating |
| US20070001116A1 (en) * | 2005-06-29 | 2007-01-04 | Hayes Robert S | Thermal infrared image detector |
| CN101297403A (en) * | 2005-09-22 | 2008-10-29 | 富士胶片株式会社 | Method for cutting solid-state image pickup device |
| CN101728403A (en) * | 2009-11-18 | 2010-06-09 | 中国科学院上海技术物理研究所 | Back-illuminated mercury cadmium telluride long-wave light-guide type infrared flat-panel detector |
| CN101728450A (en) * | 2009-11-18 | 2010-06-09 | 中国科学院上海技术物理研究所 | High duty ratio tellurium cadmium mercury long-wave infrared conductive array detector |
| CN102185025A (en) * | 2011-04-01 | 2011-09-14 | 中国科学院上海技术物理研究所 | Manufacturing process of metal waveguide microcavity optical coupling structure used for photoelectric functional devices |
| CN102544217A (en) * | 2012-01-16 | 2012-07-04 | 中国电子科技集团公司第十一研究所 | Large-scale indium column generation method for infrared focal plane detector |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103985784A (en) * | 2014-04-18 | 2014-08-13 | 中国电子科技集团公司第十一研究所 | Polishing and chamfering method for semiconductor chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103000766B (en) | 2016-01-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI446420B (en) | Releasing carrier method for semiconductor process | |
| CN105921465B (en) | Gel resin device | |
| TW201029799A (en) | Resin coating method and resin coating device (1) | |
| CN103302572B (en) | The method for grinding of plate object | |
| JP2004193237A (en) | Wafer retaining member equipped with pressure sensitive adhesive sheet and peeling method of pressure sensitive adhesive sheet | |
| CN103000766A (en) | Method for scribing bonding of infrared focal plane detector indium bump | |
| JP2013256610A5 (en) | ||
| CN102543812B (en) | Mounted wafer manufacturing method | |
| CN107910289B (en) | Repairing method for micro-display device and micro-display device | |
| CN110648908B (en) | Chip cutting method | |
| CN109081301A (en) | A kind of MEMS wafer cutting method | |
| CN205971974U (en) | Glass is jig for film sticking for lens | |
| TW201202380A (en) | Double-sided adhesive tape used in panel manufacturing process | |
| CN110347293A (en) | The fitting processing procedure of touch device | |
| CN102298205A (en) | Fresnel lens concentrating assembly and preparation method thereof | |
| CN206536338U (en) | A kind of bare fibre polishing device for end surface | |
| CN101722782A (en) | Method for manufacturing glass transfer film | |
| JP2012023244A (en) | Manufacturing method of semiconductor element and light emitting diode and power device having the semiconductor element manufactured by the method | |
| JP2015041695A (en) | Electronic component manufacturing method | |
| CN212174860U (en) | Photoinduced adhesive tape | |
| JP5056073B2 (en) | Method of using tape and method of manufacturing semiconductor device | |
| CN105690239B (en) | LiNbO3Integrated optical device chip Ginding process | |
| CN203720384U (en) | Optical object structure | |
| JP2014036928A (en) | Foreign body remover | |
| CN117283451A (en) | Lithium niobate chip non-accompanying chip mounting method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |