CN102544217A - Large-scale indium column generation method for infrared focal plane detector - Google Patents
Large-scale indium column generation method for infrared focal plane detector Download PDFInfo
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- CN102544217A CN102544217A CN2012100118292A CN201210011829A CN102544217A CN 102544217 A CN102544217 A CN 102544217A CN 2012100118292 A CN2012100118292 A CN 2012100118292A CN 201210011829 A CN201210011829 A CN 201210011829A CN 102544217 A CN102544217 A CN 102544217A
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Abstract
The invention discloses a large-scale indium column generation method for an infrared focal plane detector. The large-scale indium column generation method comprises the following steps of: step 1, coating photoresist for a set thickness on a chip of the infrared focal plane detector; step 2, carrying out blanket exposure treatment on the coated photoresist; step 3, continuously coating the photoresist for the set thickness on the exposed photoresist; step 4, photoetching the coated photoresist by using a photoetching machine; and step 5, depositing indium on the chip of the infrared focal plane detector after photoetching and then stripping the photoresist, so as to obtain the generated indium column. According to the method provided by the invention, the indium column is stripped by using two layers of the photoresist, so that the indium column has no residues at the bottom and has good appearance consistency. Furthermore, the communication rate of reverse welding of the chip of the detector and a read-out circuit can be effectively improved, and the blind pixel rate of the detector is effectively reduced.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to a kind of extensive infrared focal plane detector indium post growing method.
Background technology
At present, the infrared focus plane Detection Techniques have the spectral response wide waveband, can obtain more multiple-object information, can work double tides etc. remarkable advantage be widely used in each field.
The focus planardetector of present domestic main flow adopts reading circuit that signal is read, and with the mode of indium pole interconnection detector array chip and reading circuit is integrated.Nowadays along with the high speed development of focus planardetector; Need prepare that array is larger, the better detector chip of imaging effect; Therefore the size of detector chip can become big gradually; Make the increase that the detector chip size can be not at double through the mode of dwindling the pixel spacing simultaneously, this also will follow dwindling of pixel spacing with regard to the floor space that means the indium post and reduce.
Existing indium post growth technique is to adopt the mode of thick resist lithography to produce figure, on glue, adopts the mode of thermal evaporation to deposit indium again, adopts the technology of peeling off to remove photoresist again, thereby processes the indium post.In actual process and follow-up research, find that after indium post bed-plate dimension reduced, existing indium post growth technique can cause indium column bottom residue, can't guarantee the consistency of the pattern of indium post.With this indium post serves as after the basis interconnects, and can reduce the connection rate of detector chip and reading circuit, a large amount of blind elements occurs.
Summary of the invention
The present invention provides a kind of extensive infrared focal plane detector indium post growing method, is prone to residue in order to solve the indium column bottom of adopting existing indium post growing method to generate, and then causes detector the problem of blind element to occur.
Particularly, a kind of extensive infrared focal plane detector indium post growing method provided by the invention comprises:
Step 1 deposits photoresist on the infrared focal plane detector chip;
Step 2 is carried out blanket exposure to the photoresist that deposits and is handled;
Step 3 continues the deposition photoresist on the photoresist after the exposure;
Step 4 utilizes mask aligner that the photoresist of deposition is carried out photoetching treatment;
Step 5, stripping photoresist behind deposition indium on the chip after the photoetching treatment, the indium post that obtains growing.
Further, in the method for the invention, in the said step 2 photoresist of deposition is carried out the mode that blanket exposure handles and comprises:
The infrared focal plane detector chip of deposition photoresist is placed on the mask aligner, utilizes mask aligner under the condition that photolithography plate is not installed, the photoresist of deposition to be carried out exposure-processed.
Further, in the method for the invention, in the said step 2, the time for exposure of exposure-processed is 15～30s.
Further, in the method for the invention, the thickness of the photoresist of deposition is 10～20 microns in said step 1 and the step 3.
Further, in the method for the invention, in said step 1 and the step 3, adopt sol evenning machine to deposit said photoresist.
Further, in the method for the invention, in the said step 5, adopt the mode of thermal evaporation to deposit indium.
Further, in the method for the invention, the mode of stripping photoresist comprises: the chip that will deposit behind the indium is immersed in the acetone soln, and after soaking special time, carries out sonicated.
Wherein, said immersion special time is 1～2 hour.
Compared with prior art, beneficial effect of the present invention is following:
The method of the invention utilizes two-layer photoresist to carry out peeling off of indium post, and the indium column bottom does not have residue, and consistent appearance property is good.On chip and reading circuit, grow this indium post; Carry out the upside-down mounting welding with appropriate condition then; Can effectively improve the connection rate of detector chip and reading circuit upside-down mounting welding, reduce the blind element rate of detector, be adapted at using in the extensive Infrared Detectors interconnection process.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art; To do one to the accompanying drawing of required use in embodiment or the description of the Prior Art below introduces simply; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work property, can also obtain other accompanying drawing according to these accompanying drawings.
The flow chart of a kind of extensive infrared focal plane detector indium post growing method that Fig. 1 provides for the embodiment of the invention one;
Fig. 2 is the chip structure figure behind the deposition ground floor photoresist in the embodiment of the invention two;
Fig. 3 is the chip structure figure behind the deposition second layer photoresist in the embodiment of the invention two;
Fig. 4 is for making the chip structure figure behind the indium post figure in the embodiment of the invention two by lithography;
Fig. 5 is the chip structure figure behind the growth indium film in the embodiment of the invention two;
Fig. 6 is the chip structure figure behind the stripping photoresist in the embodiment of the invention two.
Embodiment
To combine the accompanying drawing in the embodiment of the invention below, the technical scheme in the embodiment of the invention is carried out clear, intactly description, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
In order to solve the problem that the growth of indium post exists in the prior art; The present invention provides a kind of extensive infrared focal plane detector indium post growing method; This method can be improved the pattern of indium post, improves the connection rate after detector chip and reading circuit upside-down mounting are welded, and reduces the blind element rate of detector.
Through several specific embodiments the implementation procedure of the method for the invention is set forth in detail below.
Embodiment one
The embodiment of the invention provides a kind of extensive infrared focal plane detector indium post growing method, and is as shown in Figure 1, comprises the steps:
Step S101 on the infrared focal plane detector chip, adopts sol evenning machine deposition photoresist;
In this step, the thickness of deposition photoresist is 10～20 microns.
Step S102 carries out blanket exposure to the photoresist that deposits;
In this step, the time for exposure of blanket exposure is 15～30s;
In this step, it is preferred but be not limited to that the photoresist of deposition is carried out the mode of blanket exposure: the chip that will deposit photoresist is placed on the mask aligner, utilizes mask aligner under the condition that photolithography plate is not installed, the photoresist of coating to be carried out exposure-processed.
Step S103 adopts sol evenning machine, on the photoresist after the exposure-processed, continues the deposition photoresist;
In this step, the thickness of deposition photoresist is 10～20 microns.
Step S104 utilizes mask aligner, on the photoresist of deposition, carries out photoetching treatment;
In this step, the mode of said photoetching treatment adopts traditional photolithographicallpatterned, comprising: operations such as preceding baking, exposure, development; Wherein, said exposure is an exposing operation of utilizing mask aligner under the condition that photolithography plate is installed, to carry out.Because above-mentioned photoetching treatment operation all belongs to known technology, so do not do detailed description for the detailed implementation procedure of each operation at this.
Step S105, the chip surface deposition indium after photoetching treatment;
In this step, during the deposition indium, adopt the mode of thermal evaporation to realize that vacuum degree is 10-4psi during deposition, the sample disc temperature is controlled at 25 degrees centigrade.
Step S106 carries out stripping photoresist to the chip behind the deposition indium and handles the indium post that obtains growing.
In this step, said stripping photoresist is that the chip behind the deposition indium is immersed in the acetone soln, and soaking the scheduled time is 1 to 2 hour, and the beaker that will fill acetone soln is then put into ultrasonic machine, the ultrasonic photoresist that peels off, the indium post that obtains growing.
Embodiment two
The embodiment of the invention provides a kind of extensive infrared focal plane detector indium post growing method, and this method is a kind of concrete implementation of embodiment one said method, and the said method of present embodiment comprises:
Step 1, on the infrared focal plane detector chip, adopting the sol evenning machine deposit thickness is the photoresist of 12 μ m; The chip of deposition photoresist is as shown in Figure 2, and " 1 " is photoresist among the figure.
Step 2 is placed on the chip that deposits photoresist on the exposure desk of exposure machine, utilizes mask aligner not add photolithography plate photoresist is made public; In the present embodiment, the time for exposure is 20s.
Step 3, adopt sol evenning machine again on chip deposit thickness be the photoresist of 12 μ m; The chip that deposits photoresist once more is as shown in Figure 3, the photoresist that " 2 " expression deposits once more among the figure.
Step 4 utilizes mask aligner on the photoresist of deposition, through selecting suitable photolithography plate, makes indium post figure by lithography; As shown in Figure 4, for making the chip behind the indium post figure by lithography.
Step 5 adopts the mode of thermal evaporation to deposit indium at chip surface; Vacuum degree is 10-4psi during deposition, and the sample disc temperature is controlled at 25 degrees centigrade, and the indium thickness of deposition is 15 μ m, and is specifically as shown in Figure 5.
Step 6, after deposition work was accomplished, chip was immersed in the acetone soln, and soaking the scheduled time is 1 to 2 hour, and the beaker that will fill acetone soln is then put into ultrasonic machine, sets suitable ultrasonic power and time, and photoresist is removed totally fully; In this step, the chip behind the stripping photoresist is as shown in Figure 6.
In sum, the method for the invention was because the ground floor photoresist was made public once; And made public comprehensively; So when the development operation of photoetching, the size of figure can be greater than the size of the second layer in the ground floor photoresist, and then make in the process of deposition indium; Can not occur peeling off unsuccessful problem because the indium layer is thicker
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (8)
1. an extensive infrared focal plane detector indium post growing method is characterized in that, comprising:
Step 1 deposits photoresist on the infrared focal plane detector chip;
Step 2 is carried out blanket exposure to the photoresist that deposits and is handled;
Step 3 continues the deposition photoresist on the photoresist after the exposure;
Step 4 utilizes mask aligner that the photoresist of deposition is carried out photoetching treatment;
Step 5, stripping photoresist behind deposition indium on the chip after the photoetching treatment, the indium post that obtains growing.
2. the method for claim 1 is characterized in that, in the said step 2 photoresist of deposition is carried out the mode that blanket exposure handles and comprises:
The infrared focal plane detector chip of deposition photoresist is placed on the mask aligner, utilizes mask aligner under the condition that photolithography plate is not installed, the photoresist of deposition to be carried out exposure-processed.
3. according to claim 1 or claim 2 method is characterized in that in the said step 2, the time for exposure of said exposure-processed is 15～30s.
4. according to claim 1 or claim 2 method is characterized in that, the thickness of the photoresist of deposition is 10～20 microns in said step 1 and the step 3.
5. according to claim 1 or claim 2 method is characterized in that, in said step 1 and the step 3, adopts sol evenning machine to deposit said photoresist.
6. according to claim 1 or claim 2 method is characterized in that, in the said step 5, adopts the mode of thermal evaporation to deposit indium.
7. according to claim 1 or claim 2 method is characterized in that in the said step 5, the mode of stripping photoresist comprises: the chip that will deposit behind the indium is immersed in the acetone soln, and after soaking special time, carries out sonicated.
8. method as claimed in claim 7 is characterized in that, said immersion special time is 1～2 hour.
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| CN2012100118292A CN102544217A (en) | 2012-01-16 | 2012-01-16 | Large-scale indium column generation method for infrared focal plane detector |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102881607A (en) * | 2012-09-27 | 2013-01-16 | 中国科学院长春光学精密机械与物理研究所 | Novel focal plane array electrical interconnection process |
| CN103000766A (en) * | 2012-12-10 | 2013-03-27 | 中国电子科技集团公司第十一研究所 | Method for scribing bonding of infrared focal plane detector indium bump |
| CN103078003A (en) * | 2012-12-28 | 2013-05-01 | 中国电子科技集团公司第十一研究所 | Method and device for photoetching focal plane detector indium column |
| CN103413814A (en) * | 2013-07-30 | 2013-11-27 | 中国科学院上海技术物理研究所 | Method for carrying out infrared focal plane device high-density fine indium column end face leveling |
| CN111755572A (en) * | 2020-06-24 | 2020-10-09 | 中国电子科技集团公司第十一研究所 | Method for preparing indium salient points of infrared detector reading circuit and prepared reading circuit |
| CN117855340A (en) * | 2024-03-07 | 2024-04-09 | 山西创芯光电科技有限公司 | Indium column preparation method for reducing blind pixel rate of infrared detector |
| CN117855340B (en) * | 2024-03-07 | 2024-05-17 | 山西创芯光电科技有限公司 | Indium column preparation method for reducing blind pixel rate of infrared detector |
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| CN101118886A (en) * | 2007-08-22 | 2008-02-06 | 中国科学院上海技术物理研究所 | Composite indium column for infrared focal plane device and process for producing the same |
| CN101132034A (en) * | 2007-09-03 | 2008-02-27 | 中国电子科技集团公司第十三研究所 | Method for manufacturing indium column |
| CN102130024A (en) * | 2010-01-20 | 2011-07-20 | 上海华虹Nec电子有限公司 | Method for plating silver on front side of silicon wafer |
| CN102136484A (en) * | 2010-11-26 | 2011-07-27 | 中国科学院上海技术物理研究所 | Indium columns for face-down bonding interconnection of infrared focal plane and preparation method thereof |
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| CN101118886A (en) * | 2007-08-22 | 2008-02-06 | 中国科学院上海技术物理研究所 | Composite indium column for infrared focal plane device and process for producing the same |
| CN101132034A (en) * | 2007-09-03 | 2008-02-27 | 中国电子科技集团公司第十三研究所 | Method for manufacturing indium column |
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| CN102136484A (en) * | 2010-11-26 | 2011-07-27 | 中国科学院上海技术物理研究所 | Indium columns for face-down bonding interconnection of infrared focal plane and preparation method thereof |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102881607A (en) * | 2012-09-27 | 2013-01-16 | 中国科学院长春光学精密机械与物理研究所 | Novel focal plane array electrical interconnection process |
| CN102881607B (en) * | 2012-09-27 | 2015-02-18 | 中国科学院长春光学精密机械与物理研究所 | Novel focal plane array electrical interconnection process |
| CN103000766A (en) * | 2012-12-10 | 2013-03-27 | 中国电子科技集团公司第十一研究所 | Method for scribing bonding of infrared focal plane detector indium bump |
| CN103078003A (en) * | 2012-12-28 | 2013-05-01 | 中国电子科技集团公司第十一研究所 | Method and device for photoetching focal plane detector indium column |
| CN103078003B (en) * | 2012-12-28 | 2015-07-29 | 中国电子科技集团公司第十一研究所 | The photoetching method of focal plane detector indium column and device |
| CN103413814A (en) * | 2013-07-30 | 2013-11-27 | 中国科学院上海技术物理研究所 | Method for carrying out infrared focal plane device high-density fine indium column end face leveling |
| CN103413814B (en) * | 2013-07-30 | 2015-07-29 | 中国科学院上海技术物理研究所 | The preparation method of infrared focal plane device high density fine indium styletable face leveling |
| CN111755572A (en) * | 2020-06-24 | 2020-10-09 | 中国电子科技集团公司第十一研究所 | Method for preparing indium salient points of infrared detector reading circuit and prepared reading circuit |
| CN111755572B (en) * | 2020-06-24 | 2022-06-28 | 中国电子科技集团公司第十一研究所 | Method for preparing indium salient point of infrared detector reading circuit and prepared reading circuit |
| CN117855340A (en) * | 2024-03-07 | 2024-04-09 | 山西创芯光电科技有限公司 | Indium column preparation method for reducing blind pixel rate of infrared detector |
| CN117855340B (en) * | 2024-03-07 | 2024-05-17 | 山西创芯光电科技有限公司 | Indium column preparation method for reducing blind pixel rate of infrared detector |
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Application publication date: 20120704 |