CN103078003B - The photoetching method of focal plane detector indium column and device - Google Patents
The photoetching method of focal plane detector indium column and device Download PDFInfo
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- CN103078003B CN103078003B CN201210589625.7A CN201210589625A CN103078003B CN 103078003 B CN103078003 B CN 103078003B CN 201210589625 A CN201210589625 A CN 201210589625A CN 103078003 B CN103078003 B CN 103078003B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The invention discloses a kind of photoetching method and device of focal plane detector indium column, the method comprises: the detector chip after metalized applies photoresist; The described detector chip having applied photoresist is toasted; The described detector chip toasted is carried out out of focus photoetching, obtains the thick glue pattern in inverted trapezoidal after developing; Detector chip after out of focus photoetching is carried out low-temperature bake.This device comprises: glue spreader, baking box and mask aligner.The present invention by the detector chip having applied photoresist is carried out entirety baking after, again surface baking is carried out to detector chip, the photoresist on detector chip is made to produce internal-external temperature difference, then in conjunction with the out of focus photoetching of non-contact photolithography mode, produce in the thick glue pattern of inverted trapezoidal after development, the thick glue pattern sidewall of this inverted trapezoidal and the contact area of indium little, during follow-up acetone solution photoresist, indium on photoresist surface more easily comes off, thus obtains uniform indium cylindricality looks.
Description
Technical field
The present invention relates to field of photoelectric technology, particularly relate to a kind of photoetching method and device of focal plane detector indium column.
Background technology
The spectral response wide waveband of Infrared Focal Plane Detection Technology, more land object information can be obtained, and can work double tides, be widely used in early warning detection, intelligence reconnaissance, damage effectiveness estimates and farming and animal husbandry, the investigation of the forest reserves, weather forecast, geothermal distribution, earthquake, colcanism must wait field.
Along with the progressively development of detector, array scale need be prepared larger, the better detector chip of imaging effect, and photoetching process is one of key technology preparing detector chip, but existing photoetching method is all adopt contact photolithography method, and contact photolithography technique is when peeling off photoresist, the uniformity of meeting tamper detection device indium post, along with the development contact photolithography technique of detector chip can not meet the growth requirement of people to detector chip, so the uniformity how improved after the photoetching of detector indium post becomes present problem demanding prompt solution.
What prior art obtained is the thick glue pattern of trapezoid, and the present invention obtains is the thick glue pattern of inverted trapezoidal, namely trapezoidal narrow limit of the present invention is connected with described detector chip, make the area of the contact of indium and photoresist sidewall little like this, when making follow-up acetone solution photoresist, indium on photoresist surface more easily comes off, described out of focus photoetching specifically comprises: the surface contacted to described detector chip with photoresist by the Focussing of out of focus photoetching, then carry out out of focus photoetching, defocusing amount is-0.011 ~ 0.015 millimeter.
S104, the detector chip after out of focus photoetching is carried out low-temperature bake;
The temperature of described low-temperature bake is 50 ~ 80 degree, and the time is 1 ~ 3 hour.After out of focus photoetching is complete, carry out low-temperature bake again, the thick glue pattern of inverted trapezoidal out of focus photoetching being obtained by low-temperature bake is more stable.
S105, carry out detector indium post growth;
Photoresist on described detector chip dissolves by S106, use acetone soln.
The photoetching method of the focal plane detector indium column that the embodiment of the present invention provides, after entirety baking is carried out to the detector chip having applied photoresist, again surface baking is carried out to detector chip, the photoresist on detector chip is made to produce internal-external temperature difference, then in conjunction with the out of focus photoetching of non-contact photolithography mode, it is the thick glue pattern of inverted trapezoidal after producing development, the thick glue pattern sidewall of this inverted trapezoidal and the contact area of indium little, during follow-up acetone solution photoresist, indium on photoresist surface more easily comes off, thus obtains uniform indium cylindricality looks.
Summary of the invention
In view of above-mentioned analysis, the present invention aims to provide a kind of photoetching method and device of focal plane detector indium column, in order to improve the uniformity of detector indium post in prior art further.
Object of the present invention is mainly achieved through the following technical solutions:
A photoetching method for focal plane detector indium column, the method comprises:
Detector chip after metalized applies photoresist;
The described detector chip having applied photoresist is toasted;
The described detector chip toasted is carried out out of focus photoetching, obtains the thick glue pattern in inverted trapezoidal after developing;
Detector chip after out of focus photoetching is carried out low-temperature bake.
Preferably, the thickness of described detector chip coating photoresist is 12 ~ 18 microns.
Preferably, the step that the described detector chip having applied photoresist carries out toasting specifically is comprised:
The described detector chip having applied photoresist carries out entirety baking, and the temperature of described entirety baking is 50 ~ 70 degree, and overall baking time is 0.5 ~ 1 hour;
And then carry out surface baking, the temperature of described surface baking is 90 ~ 110 degree, and surperficial baking time is 1 ~ 3 minute.
Preferably, described out of focus photoetching specifically comprises: the surface contacted to described detector chip with photoresist by the Focussing of out of focus photoetching, then carries out out of focus photoetching, and the defocusing amount of out of focus photoetching is-0.011 ~ 0.015 millimeter.
Preferably, the temperature of described low-temperature bake is 50 ~ 80 degree, and the time is 1 ~ 3 hour.
The embodiment of the present invention additionally provides a kind of lithographic equipment of focal plane detector indium column, and this device comprises:
Glue spreader, applies photoresist on the detector chip after metalized;
Baking box, for being toasted by the described detector chip having applied photoresist, and carries out low-temperature bake by the detector chip after out of focus photoetching;
Mask aligner, carries out out of focus photoetching for the described detector chip toasted by described baking box, obtains the thick glue pattern in inverted trapezoidal after developing.
Preferably, the thickness of described detector chip coating photoresist is 12 ~ 18 microns.
Preferably, described baking box specifically for, the described detector chip having applied photoresist is carried out entirety baking, described entirety baking temperature be 50 ~ 70 degree, overall baking time is 0.5 ~ 1 hour;
Also comprise hot plate, described hot plate, carry out surface baking for the detector chip after entirety being toasted, the temperature of described surface baking is 90 ~ 110 degree, and surperficial baking time is 1 ~ 3 minute.
Preferably, described mask aligner specifically for, by the surface that the Focussing of out of focus photoetching contacts to described detector chip with photoresist, then carry out out of focus photoetching, out of focus photoetching defocusing amount is-0.011 ~ 0.015 millimeter, obtains the thick glue pattern in inverted trapezoidal after developing.
Preferably, described baking box also for, carry out low-temperature bake to the described detector chip after the photoetching of described mask aligner out of focus, the temperature of described low-temperature bake is 50 ~ 80 degree, and the time is 1 ~ 3 hour.
Beneficial effect of the present invention is as follows:
The photoetching method of focal plane detector indium column provided by the invention and device, after entirety baking is carried out to the detector chip having applied photoresist, again surface baking is carried out to detector chip, the photoresist on detector chip is made to produce internal-external temperature difference, then in conjunction with the out of focus photoetching of non-contact photolithography mode, it is the thick glue pattern of inverted trapezoidal after producing development, the thick glue pattern sidewall of this inverted trapezoidal and the contact area of indium little, during follow-up acetone solution photoresist, indium on photoresist surface more easily comes off, thus obtains uniform indium cylindricality looks.
Other features and advantages of the present invention will be set forth in the following description, and, becoming apparent from specification of part, or understand by implementing the present invention.Object of the present invention and other advantages realize by structure specifically noted in write specification, claims and accompanying drawing and obtain.
Accompanying drawing explanation
Fig. 1 is the flow chart of the photoetching method of the focal plane detector indium column of the embodiment of the present invention;
Fig. 2 is the lithographic equipment schematic diagram of the focal plane detector indium column of the embodiment of the present invention.
Embodiment
Specifically describe the preferred embodiments of the present invention below in conjunction with accompanying drawing, wherein, accompanying drawing forms the application's part, and together with embodiments of the present invention for explaining principle of the present invention.
Embodiment 1
Embodiments provide a kind of photoetching method of focal plane detector indium column, see Fig. 1, the method comprises:
S101, detector chip after metalized apply photoresist;
Wherein, the thickness of described detector chip coating photoresist is 12 ~ 18 microns.
S102, the described detector chip having applied photoresist to be toasted;
The step of baking specifically comprises:
The described detector chip having applied photoresist carries out entirety baking, and the temperature of described entirety baking is 50 ~ 70 degree, and overall baking time is 0.5 ~ 1 hour; By entirety baking, photoresist is shaped.
Carry out surface baking again, the temperature of described surface baking is 90 ~ 110 degree, and surperficial baking time is 1 ~ 3 minute.
Photoresist is made to carry out surface cure by surface baking.Because the characteristic of photoresist, development is not easy during temperature height, easily develop when temperature is low, the temperature on photoresist surface is improve by surface baking, namely the internal temperature of photoresist is low, and surface temperature is high, and the photoresist near detector chip is more easily developed, final when carrying out out of focus photoetching, obtain the thick glue pattern of inverted trapezoidal after developing.
S103, the described detector chip having toasted photoresist is carried out out of focus photoetching, obtain the thick glue pattern of inverted trapezoidal after developing;
Embodiment 2
Embodiments provide a kind of lithographic equipment of focal plane detector indium column, see Fig. 2, this device comprises:
Glue spreader 21, applies photoresist on the detector chip after metalized.The thickness of described detector chip coating photoresist is 12 ~ 18 microns.
Baking box 22, for the described detector chip having applied photoresist being carried out entirety baking, the temperature of described entirety baking is 50 ~ 70 degree, and overall baking time is 0.5 ~ 1 hour; Carry out low-temperature bake to the described detector chip after the photoetching of described mask aligner out of focus, the temperature of described low-temperature bake is 50 ~ 80 degree, and the time is 1 ~ 3 hour;
Hot plate 23, carry out surface baking for the detector chip after described baking box being carried out overall baking, the temperature of described surface baking is 90 ~ 110 degree, and surperficial baking time is 1 ~ 3 minute.
Mask aligner 24, for the surface contacted to described detector chip with photoresist by the Focussing of out of focus photoetching, then carries out out of focus photoetching, and out of focus photoetching defocusing amount is-0.011 ~ 0.015 millimeter, obtains the thick glue pattern in inverted trapezoidal after developing.
In sum, the photoetching method of the focal plane detector indium column that the embodiment of the present invention provides and device, after entirety baking is carried out to the detector chip having applied photoresist, again surface baking is carried out to detector chip, the photoresist on detector chip is made to produce internal-external temperature difference, then in conjunction with the out of focus photoetching of non-contact photolithography mode, it is the thick glue pattern of inverted trapezoidal after producing development, the thick glue pattern sidewall of this inverted trapezoidal and the contact area of indium little, during follow-up acetone solution photoresist, indium on photoresist surface more easily comes off, thus obtain uniform indium cylindricality looks.
The above; be only the present invention's preferably embodiment, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (4)
1. a lithographic equipment for focal plane detector indium column, is characterized in that, comprising:
Applicator, applies photoresist on the detector chip after metalized;
Baking box, for being toasted by the described detector chip having applied photoresist, and carries out low-temperature bake by the detector chip after out of focus photoetching;
Mask aligner, carries out out of focus photoetching for the described detector chip toasted by described baking box, obtains the thick glue pattern in inverted trapezoidal after developing;
Wherein, described baking box also for, carry out low-temperature bake to the described detector chip after the photoetching of described mask aligner out of focus, the temperature of described low-temperature bake is 50 ~ 80 degree, and the time is 1 ~ 3 hour.
2. device according to claim 1, is characterized in that, the thickness of described detector chip coating photoresist is 12 ~ 18 microns.
3. device according to claim 1, is characterized in that,
Described baking box specifically for, the described detector chip having applied photoresist is carried out entirety baking, described entirety baking temperature be 50 ~ 70 degree, overall baking time is 0.5 ~ 1 hour;
Also comprise hot plate, described hot plate, carry out surface baking for the detector chip after entirety being toasted, the temperature of described surface baking is 90 ~ 110 degree, and surperficial baking time is 1 ~ 3 minute.
4. the device according to claim 1-3 any one, is characterized in that,
Described mask aligner specifically for, by the surface that the Focussing of out of focus photoetching contacts to described detector chip with photoresist, then carry out out of focus photoetching, out of focus photoetching defocusing amount is-0.011 ~ 0.015 millimeter, in the thick glue pattern of inverted trapezoidal after obtaining developing.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210589625.7A CN103078003B (en) | 2012-12-28 | 2012-12-28 | The photoetching method of focal plane detector indium column and device |
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| CN201210589625.7A CN103078003B (en) | 2012-12-28 | 2012-12-28 | The photoetching method of focal plane detector indium column and device |
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| CN103078003B true CN103078003B (en) | 2015-07-29 |
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| CN106024982A (en) * | 2016-07-11 | 2016-10-12 | 中国科学院上海技术物理研究所 | Preparation method for indium column of infrared focal plane chip |
| CN110361937B (en) * | 2018-03-26 | 2021-03-02 | 上海微电子装备（集团）股份有限公司 | Exposure method, exposure machine, semiconductor device and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101251715A (en) * | 2008-03-25 | 2008-08-27 | 上海宏力半导体制造有限公司 | Photolithography method capable of improving graphical quality |
| CN102130024A (en) * | 2010-01-20 | 2011-07-20 | 上海华虹Nec电子有限公司 | Method for plating silver on front side of silicon wafer |
| CN102136484A (en) * | 2010-11-26 | 2011-07-27 | 中国科学院上海技术物理研究所 | Indium columns for face-down bonding interconnection of infrared focal plane and preparation method thereof |
| CN102544217A (en) * | 2012-01-16 | 2012-07-04 | 中国电子科技集团公司第十一研究所 | Large-scale indium column generation method for infrared focal plane detector |
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| JPS5532077A (en) * | 1978-08-28 | 1980-03-06 | Sharp Corp | Photoresist baking method |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101251715A (en) * | 2008-03-25 | 2008-08-27 | 上海宏力半导体制造有限公司 | Photolithography method capable of improving graphical quality |
| CN102130024A (en) * | 2010-01-20 | 2011-07-20 | 上海华虹Nec电子有限公司 | Method for plating silver on front side of silicon wafer |
| CN102136484A (en) * | 2010-11-26 | 2011-07-27 | 中国科学院上海技术物理研究所 | Indium columns for face-down bonding interconnection of infrared focal plane and preparation method thereof |
| CN102544217A (en) * | 2012-01-16 | 2012-07-04 | 中国电子科技集团公司第十一研究所 | Large-scale indium column generation method for infrared focal plane detector |
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