CN101330010A - Method for preparing T type HBT emitter electrode/HEMT gate - Google Patents
Method for preparing T type HBT emitter electrode/HEMT gate Download PDFInfo
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- CN101330010A CN101330010A CNA2007101176152A CN200710117615A CN101330010A CN 101330010 A CN101330010 A CN 101330010A CN A2007101176152 A CNA2007101176152 A CN A2007101176152A CN 200710117615 A CN200710117615 A CN 200710117615A CN 101330010 A CN101330010 A CN 101330010A
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Abstract
The invention relates to a semiconductor device and the technical field of integrated circuit manufacturing technologies and discloses a method for manufacturing a T-HBT emitter/an HEMT gate. The method of the invention includes the steps that a primary photoresist is coated on a substrate and then the photoetching, exposing, developing and definition are carried out to the lower half part of the T-HBT emitter/the HEMT gate; the substrate is dried so that the edge of a sacrifice gum can be smooth and cured; a secondary photoresist is coated and then the photoetching, exposure, developing and definition are carried out to the upper half part of the T-HBT emitter/the HEMT gate; a layer of metal is evaporated, sputtered or electroplated and the thickness of the metal layer is larger than that of the primary photoresist; unnecessary metal and all the photoresists are removed to form the T-HBT emitter/the HEMT gate. The method of the invention has the advantages of simple technology, low cost and good control; in addition, the manufacturing of the T-HBT emitter/the HEMT gate with thickened metal is more advantageous.
Description
Technical field
The present invention relates to semiconductor device and field of IC technique, relate in particular to a kind of two-layer photosensitive photoresist making T type heterojunction bipolar transistor (Heterojuction BipolarTransistor that utilizes, HBT) emitter/High Electron Mobility Transistor (High Electronic MobilityTransistor, HEMT) method of grid is used for reducing HBT dead resistance or HEMT grid stray inductance.
Background technology
In the modem semi-conductor devices manufacturing process, along with development of technology, device size is more and more littler, and integrated level is more and more higher.For compound semiconductor device, in order to improve device performance, HBT often adopts self-aligned technology to reduce the base stage dead resistance, and adopting T type emitter also is a kind of method that the HBT autoregistration is adopted; HEMT adopts T type grid to reduce stray inductance, and therefore, T type HBT emitter/HEMT grid are the important technical that improve HBT and HEMT performance.
The outbound course of present HBT emitter has multiple, mainly contains: with the manufacture method of electron beam exposure manufacture method and X-ray lithography.
Method 1, the method for making T type HBT emitter/HEMT grid with the electron beam exposure manufacture method comprise the steps:
1), get the substrate of waiting to make T type grid, this substrate is cleaned, and dries up with nitrogen, the oven dry;
2), on substrate, be coated with three layers of PMMA/PMGI/PMMA glue, oven dry;
3), send electron beam exposure, development, photographic fixing with the substrate behind the gluing;
4), carry out trenching, grid evaporation of metal, stripping technology, finish device or circuit production.
Method 2, utilize the method for X-ray lithography and optical lithography fabricating T shaped grating by mixed, its processing step is as follows:
1), on semiconductor chip, coats the bottom X-ray resist;
2), X-ray lithography method exposure bottom X-ray resist;
3), coat top optics etching glue;
4), optical lithography method exposure top optics etching glue;
5), development top optics etching glue obtains wide gate figure;
6), development bottom X-ray resist obtains grid groove figure;
7), evaporate, peel off the grid metal, finish T type grid and make.
Above-mentioned two kinds of methods adopt electron beam exposure or X ray exposure respectively, and cost is higher, and coated glue-line number is many, and complex process is made emitter or grid metal thickness and is restricted.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of method of utilizing two-layer photosensitive photoresist to make T type HBT emitter/HEMT grid, to reduce cost of manufacture, simplifies manufacture craft, increases the thickness of emitter or grid metal.
(2) technical scheme
For achieving the above object, the invention provides the method for a kind of making T type HBT emitter/HEMT grid, this method comprises:
On substrate, be coated with photoresist one time, and the latter half of photoetching, exposure, development, definition of T type HBT emitter/HEMT grid;
Toast described substrate, make the slick and sly and curing in the corner of sacrificing glue;
Be coated with the secondary photoresist, and photoetching, exposure, development, the top that makes T type HBT emitter/HEMT grid;
Evaporation, sputter or plating layer of metal, metal layer thickness is greater than a photoresist thickness;
Peel off and remove unwanted metal and all photoresists, form T type HBT emitter/HEMT grid.
In the such scheme, the described photoresist that on substrate, is coated with a time, and in the step of the latter half of photoetching, exposure, development, definition of T type HBT emitter/HEMT grid, a used photoresist is photosensitive positive glue, negative glue, counter-rotating glue, PI glue or BCB, and exposure process adopts optical exposure.
In the such scheme, in the step of the described substrate of described baking, baking oven or hot plate are adopted in baking, and temperature is between 30 degrees centigrade to 380 degrees centigrade.
In the such scheme, baking oven is adopted in described baking, and substrate is put into 80～200 degrees centigrade of baking oven bakings 3～120 minutes; Hot plate was adopted in described baking, 60～200 degrees centigrade of hot plate bakings 3～120 minutes.
In the such scheme, describedly be coated with the secondary photoresist, and photoetching, exposure, development, make in the step on top of T type HBT emitter/HEMT grid, used secondary photoresist is positive glue, negative glue, counter-rotating glue, PI glue or BCB; The figure that the secondary photoresist forms is identical with the figure of a photoresist formation, but the lines that the secondary photoresist forms in the figure are wideer than the lines in the photoresist formation figure; The lines that the secondary photoresist forms in the figure form by time for exposure, the developing time parameter of adjusting exposure process, or realize by the mask of using wideer lines.
In the such scheme, described exposure comprises: the substrate that will be coated with photoresist exposes under the contact exposure machine of G, H, I line source or projection mask aligner.
In the such scheme, the step of described evaporation, sputter or plating layer of metal comprises, the substrate behind the secondary photoresist photoetching development is put into evaporation/sputter stove, vacuumizes, and the metal thickness of evaporation, sputter is greater than a photoresist thickness.
In the such scheme, described peeling off removed unwanted metal and all photoresists, forms in the step of T type HBT emitter/HEMT grid, peels off the reagent of reagent for the secondary photoresist being removed of employing; Describedly peel off further employing heating, cooling, ultrasonic, million method for acoustic help stripping metal and remove glue-line.
In the such scheme, described peeling off removed unwanted metal and all photoresists, form in the step of T type HBT emitter/HEMT grid, stripping process is to place stripper to soak the regular hour substrate behind the evaporation/splash-proofing sputtering metal, and stripper is acetone or N-N-methyl-2-2-pyrrolidone N-.
In the such scheme, described peeling off removed unwanted metal and all photoresists, and the step that forms T type HBT emitter/HEMT grid further comprises: spray substrate with stripper, unwanted metal and photoresist are removed after, with solvent and deionized water rinsing substrate, nitrogen dries up then.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, the present invention makes in T type HBT emitter/HEMT grid process, by Twi-lithography definition metal pattern.
2, the present invention makes in T type HBT emitter/HEMT grid process, does not need to adopt the exposure of higher electron beam exposure of cost or X ray, and common contact exposure just can form needed metal pattern.。
3, the present invention makes in T type HBT emitter/HEMT grid process, and technological operation is simple, and controllability is good
4, the present invention make the metal thickness of T type HBT emitter/HEMT grid can be very big, further reduce parasitism.
Description of drawings
Fig. 1 is the method flow diagram of making T type HBT emitter provided by the invention/HEMT grid;
Fig. 2 makes the process chart of T type HBT emitter/HEMT grid according to the embodiment of the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is the method flow diagram of making T type HBT emitter provided by the invention/HEMT grid, and this method may further comprise the steps:
Step 101: on substrate, be coated with photoresist one time, and the latter half of photoetching, exposure, development, definition of T type HBT emitter/HEMT grid;
Step 102: toast described substrate, make the slick and sly and curing in the corner of sacrificing glue;
Step 103: be coated with the secondary photoresist, and photoetching, exposure, development, the top that makes T type HBT emitter/HEMT grid;
Step 104: evaporation, sputter or plating layer of metal, metal layer thickness is greater than a photoresist thickness;
Step 105: peel off and remove unwanted metal and all photoresists, form T type HBT emitter/HEMT grid.
A used photoresist is photosensitive positive glue, negative glue, counter-rotating glue, PI glue or BCB in the above-mentioned steps 101, is specifically as follows 9918, also can be 9912, AZ5214, and its thickness can be selected as required.Exposure process adopts optical exposure.
Baking oven or hot plate are adopted in baking described in the above-mentioned steps 102, and temperature is between 30 degrees centigrade to 380 degrees centigrade.If 80～200 degrees centigrade of baking oven bakings 3～120 minutes then put into substrate by the employing baking oven.If the employing hot plate is then 60～200 degrees centigrade of hot plate bakings 3～120 minutes.
Used secondary photoresist is positive glue, negative glue, counter-rotating glue, PI glue or BCB in the above-mentioned steps 103, is specifically as follows 9918, also can be 9912, AZ5214, and its thickness can be selected as required.The certain thickness photoresist of coating one deck on substrate, thickness is generally 0.2 to 5 μ m, toasts 10 to 210 seconds down for 80 to 115 ℃ in temperature then.
The figure that the secondary photoresist forms is identical with the figure of a photoresist formation, but the lines that the secondary photoresist forms in the figure are wideer than the lines in the photoresist formation figure.The lines that the secondary photoresist forms in the figure form by time for exposure, the developing time parameter of adjusting exposure process, or realize by the mask of using wideer lines.
Described exposure comprises: the substrate that will be coated with photoresist exposes under the contact exposure machine of G, H, I line source or projection mask aligner.
Evaporation described in the above-mentioned steps 104, sputter or plating layer of metal comprise, the substrate behind the secondary photoresist photoetching development is put into evaporation/sputter stove, vacuumize, and the metal thickness of evaporation, sputter is greater than a photoresist thickness.
Peel off the reagent of reagent for the secondary photoresist being removed of employing described in the above-mentioned steps 105; Describedly peel off further employing heating, cooling, ultrasonic, million method for acoustic help stripping metal and remove glue-line.Described stripping process is to place stripper to soak the regular hour substrate behind the evaporation/splash-proofing sputtering metal, and stripper is acetone or N-N-methyl-2-2-pyrrolidone N-etc.
Above-mentioned steps 105 further comprises: spray substrate with stripper, unwanted metal and photoresist are removed after, with solvent and deionized water rinsing substrate, nitrogen dries up then.
Described the present invention makes the realization flow figure of the overall technological scheme of T type HBT emitter/HEMT grid based on Fig. 1, and the present invention is described in more detail below in conjunction with specific embodiment.
Embodiment
In the present embodiment, use 9918 as photoresist, AZ5214 photoresist as the secondary photoresist.Further specify detailed process method of the present invention and step below in conjunction with concrete process schematic representation 2, Fig. 2 makes the process chart of T type HBT emitter/HEMT grid according to the embodiment of the invention.
Shown in schematic diagram A among Fig. 2, schematic diagram A is the certain thickness photoresist 9918 of coating on substrate, and thickness can be 0.90 μ m, toasts 70 to 110 seconds down for 80 to 100 ℃ in temperature then, as baking under 90 ℃ of conditions 90 seconds.
Shown in schematic diagram B among Fig. 2, the substrate that is coated with photoresist 9918 is exposed under exposure machine; For example the contact exposure machine or the projection mask aligner of G, H, I line source.Place developer solution to develop the substrate after the exposure.Substrate after developing is toasted, sacrifice glue-line edge is slowed down; Solidify to sacrifice glue-line simultaneously, prevent this glue-line by secondary photoetching peptization separate, corrosion or developing solution dissolution, corrosion.
Be shown in the certain thickness reversal photoresist AZ5214 of coating on the substrate as schematic diagram C among Fig. 2, for example thickness is the AZ5214 of 2.0 μ m, toasts 70 to 110 seconds down for 80 to 100 ℃ in temperature then, as baking under 90 ℃ of conditions 90 seconds.The substrate that is coated with AZ5214 is exposed under exposure machine; For example the contact exposure machine or the projection mask aligner of G, H, I line source.The substrate regular hour after the heating exposure makes the photoresist sex change; For example on 120 ℃ of hot plates, toasted about 90 seconds.Substrate after the counter-rotating is carried out maskless exposure under exposure machine; For example the contact exposure machine or the projection mask aligner of G, H, I line source, the time for exposure is as the criterion with the photoresist in the clean window that can develop.Place developer solution to develop the substrate after the general exposure, generate required pattern as figure D; Developing time is as the criterion just to obtain required figure.In this process, wideer in order to make lines, can will before expose to the sun the time, reduce as far as possible.Substrate after developing is placed dry etching machine, handle cull; For example adopt RIE etching machine, etch period was as the criterion just to remove cull, as 60 seconds.
Shown in schematic diagram E among Fig. 2, adopt the substrate surface evaporation/sputter layer of metal material of evaporation/sputtering equipment after handling cull.
Shown in schematic diagram F among Fig. 2, the substrate behind the evaporation/sputter layer of metal material is immersed in the some time in the organic solvent, stripper is heated to 80-250 degree centigrade, make the photoresist substrate that comes off, form T type HBT emitter/HEMT grid.For example substrate is placed the N-N-methyl-2-2-pyrrolidone N-, heat 100 degrees centigrade, soaked at least 60 minutes, use acetone, ethanol and deionized water rinsing then successively, finish and peel off, form T type HBT emitter/HEMT grid.
The present invention for embodiment in, use 9918 to be a photoresist, AZ5214 is a secondary glue.In actual applications, also can adopt AZ5206,9912,4406 or counter-rotating glue, negative glue, PI glue, BCB etc. as sacrificing glue-line or secondary glue.Such technical scheme is consistent on technical thought with technical scheme provided by the invention, should be included within protection scope of the present invention.。
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1, the method for a kind of making T type HBT emitter/HEMT grid is characterized in that this method comprises:
On substrate, be coated with photoresist one time, and the latter half of photoetching, exposure, development, definition of T type HBT emitter/HEMT grid;
Toast described substrate, make the slick and sly and curing in the corner of sacrificing glue;
Be coated with the secondary photoresist, and photoetching, exposure, development, the top that makes T type HBT emitter/HEMT grid;
Evaporation, sputter or plating layer of metal, metal layer thickness is greater than a photoresist thickness;
Peel off and remove unwanted metal and all photoresists, form T type HBT emitter/HEMT grid.
2, the method for making T type HBT emitter according to claim 1/HEMT grid, it is characterized in that, the described photoresist that on substrate, is coated with a time, and in the step of the latter half of photoetching, exposure, development, definition of T type HBT emitter/HEMT grid, a used photoresist is photosensitive positive glue, negative glue, counter-rotating glue, PI glue or BCB, and exposure process adopts optical exposure.
3, the method for making T type HBT emitter according to claim 1/HEMT grid is characterized in that in the step of the described substrate of described baking, baking oven or hot plate are adopted in baking, and temperature is between 30 degrees centigrade to 380 degrees centigrade.
4, the method for making T type HBT emitter according to claim 3/HEMT grid is characterized in that,
Baking oven is adopted in described baking, and substrate is put into 80～200 degrees centigrade of baking oven bakings 3～120 minutes;
Hot plate was adopted in described baking, 60～200 degrees centigrade of hot plate bakings 3～120 minutes.
5, the method for making T type HBT emitter according to claim 1/HEMT grid, it is characterized in that, the described secondary photoresist that is coated with, and photoetching, exposure, development, in the step on the top of making T type HBT emitter/HEMT grid, used secondary photoresist is positive glue, negative glue, counter-rotating glue, PI glue or BCB; The figure that the secondary photoresist forms is identical with the figure of a photoresist formation, but the lines that the secondary photoresist forms in the figure are wideer than the lines in the photoresist formation figure; The lines that the secondary photoresist forms in the figure form by time for exposure, the developing time parameter of adjusting exposure process, or realize by the mask of using wideer lines.
6, the method for making according to claim 5 T type HBT emitter/HEMT grid is characterized in that described exposure comprises: the substrate that will be coated with photoresist exposes under the contact exposure machine of G, H, I line source or projection mask aligner.
7, the method for making T type HBT emitter according to claim 1/HEMT grid, it is characterized in that, the step of described evaporation, sputter or plating layer of metal comprises, substrate behind the secondary photoresist photoetching development is put into evaporation/sputter stove, vacuumize, the metal thickness of evaporation, sputter is greater than a photoresist thickness.
8, the method for making T type HBT emitter according to claim 1/HEMT grid, it is characterized in that, described peeling off removed unwanted metal and all photoresists, forms in the step of T type HBT emitter/HEMT grid, peels off the reagent of reagent for the secondary photoresist being removed of employing; Describedly peel off further employing heating, cooling, ultrasonic, million method for acoustic help stripping metal and remove glue-line.
9, the method for making T type HBT emitter according to claim 8/HEMT grid, it is characterized in that, described peeling off removed unwanted metal and all photoresists, form in the step of T type HBT emitter/HEMT grid, stripping process is to place stripper to soak the regular hour substrate behind the evaporation/splash-proofing sputtering metal, and stripper is acetone or N-N-methyl-2-2-pyrrolidone N-.
10, the method for making T type HBT emitter according to claim 1/HEMT grid is characterized in that described peeling off removed unwanted metal and all photoresists, and the step that forms T type HBT emitter/HEMT grid further comprises:
Spray substrate with stripper, unwanted metal and photoresist are removed after, with solvent and deionized water rinsing substrate, nitrogen dries up then.
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| CNA2007101176152A CN101330010A (en) | 2007-06-20 | 2007-06-20 | Method for preparing T type HBT emitter electrode/HEMT gate |
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| CNA2007101176152A CN101330010A (en) | 2007-06-20 | 2007-06-20 | Method for preparing T type HBT emitter electrode/HEMT gate |
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Open date: 20081224 |