CN103151252A - Manufacturing method of medium auxiliary two-time formed T-shaped grating - Google Patents
Manufacturing method of medium auxiliary two-time formed T-shaped grating Download PDFInfo
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- CN103151252A CN103151252A CN2013100521697A CN201310052169A CN103151252A CN 103151252 A CN103151252 A CN 103151252A CN 2013100521697 A CN2013100521697 A CN 2013100521697A CN 201310052169 A CN201310052169 A CN 201310052169A CN 103151252 A CN103151252 A CN 103151252A
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Abstract
The invention discloses a manufacturing method of a medium auxiliary two-time formed T-shaped grating. By using a process twice, the upper part and the lower part of the T-shaped grating are respectively manufactured, an auxiliary SiN medium is combined, so as to guarantee the geometric stability of the T-shaped grating, then the T-shaped grating with a small size and higher yield is obtained, a parasitic parameter of a device is reduced, and the performance of the device is improved, especially the high-frequency performance. The manufacturing method is used for actual production of HMET devices, has the effects of strong operability and good actual effect, is helpful to improve the performance of the devices, and has a good market application prospect. The manufacturing method has the advantages of good process repeatability and large process window and is favorable for stripping grating metal and increasing the yield.
Description
Technical field
The invention belongs to technical field of semiconductors, be specifically related to the manufacture method of the auxiliary twice forming T grid of a kind of medium, more specifically a kind of utilization at twice grid evaporation of metal technique complete final T shape grid technique, to improve HEMT (High Electron Mobility Transistor, High Electron Mobility Transistor) device T shape grid rate of finished products particularly improves the manufacture method of small size T shape grid rate of finished products.
Background technology
High Electron Mobility Transistor (HEMT) is the focus of compound semiconductor device (being called for short " semiconductor device " or " device ") and circuit research at present and application, in the making of HEMT and circuit thereof, for making device and circuit performance excellent, particularly high frequency performance is excellent, and the ghost effect that reduces device is very essential.T shape grid are namely GaAs or other compound-material when making the long field-effect transistor of submicron order grid, general a kind of grid shape of employing in order to reduce gate resistance, it for performance of devices particularly the impact of high frequency performance be conclusive.Along with constantly reducing of grid size, the rate of finished products of T shape grid will constantly descend, and therefore, adopt the manufacture craft of rational T shape grid, be included in the rate of finished products and the consistency that improve technique in the ever-reduced situation of grid size, be very necessary.
Three layers of glue direct electronic beam writing technology of traditional electron beam are used for making the T shape grid of once-forming, for example adopt polyisobutene acid formicester (polymethylmethacrylate, PMMA)/poly-methylpent two (polymethylglutarimide, PMGI)/three layers of glue of UV135 (main component is ethyl lactate (Ethyl lactate) and aromatic acid acrylic polymers (Aromatic Acrylic polymer)).Its process detail as shown in Figure 1, at first be coated with respectively the photoresist PMMA/PMGI/UV135 of three layers of (2,3,4) different in kind on the surface of device (1), then by e-beam direct write lithography glue and development, the corrosion grid recess, after the hydrochloric acid surface treatment, growth suitable thickness grid metal, peel off and namely obtain T shape grid.The disadvantage of this three layers of glue direct electronic beam writing technology is: the features of shape of piling up due to evaporated metal causes the rate of finished products of T shape grid not high, and in the situation that especially the grid size is less, decrease in yield is serious.Want to improve the rate of finished products of small size T shape grid with regard to the necessary rate of finished products that guarantees the making of T shape grid by new method.
Therefore, be badly in need of a kind of new technique of exploitation, eliminate the major defect of this T shape grid technique, effectively improve the method for small size T shape grid technique rate of finished products, improve HEMT performance of devices, particularly high frequency performance.
Summary of the invention
Goal of the invention: for the problem and shortage of above-mentioned prior art existence, the manufacture method that the purpose of this invention is to provide the auxiliary twice forming T grid of a kind of medium, fill characteristic during in conjunction with evaporation of metal, the successful making T shape grid is divided into twice technique and completes, and has used silicon nitride medium to assist.Solved the problem of decrease in yield after traditional handicraft grid size reduction.Finally under the prerequisite that guarantees rate of finished products, reduce the grid size of device, improved HEMT performance of devices, particularly high frequency performance.
Technical scheme: for achieving the above object, the technical solution used in the present invention is the manufacture method of the auxiliary twice forming T grid of a kind of medium, comprises the following steps:
Step 6 is in the device surface grown silicon nitride layer of step 5 formation;
Step 10 at the device surface evaporation grid metal that step 9 forms, is removed the UV135 photoresist and is peeled off metal on the UV135 photoresist, obtains grid metal for the second time;
Step 11, the device surface growth of passivation dielectric layer step 10 forms forms complete T shape grid.
Further, described ground floor photoresist is polyisobutene acid formicester (polymethylmethacrylate, PMMA) photoresist, 200 ± 20 ℃ of drying glue temperature, 40 ± 30 seconds drying glue time.
Further, described second layer photoresist is methyl methacrylate (methylmethacrylate, MMA) photoresist, 190 ± 20 ℃ of drying glue temperature, 80 ± 30 seconds drying glue time.
Further, in described step 3, the live width of electron beam is 40nm, and dosage is 200C/m
2, to carry out adopting the AZ300 developing liquid developing 50 ± 20 seconds after electron-beam direct writing, the angle at described oblique angle is with respect to vertical direction 40 ± 20 degree.In edge of opening partly adhesion kish impact on grid metal deposit, be conducive to the formation of grid metal when angle can be alleviated evaporated metal herein.
Further, in described step 5, first use the device surface of salt acid treatment step four formation of concentration 40%, then evaporate successively grid Titanium, platinum, gold, wherein the thickness of titanium, platinum, gold is respectively 30nm, 30nm, 150 ± 50nm.
Further, the main component of described UV135 photoresist is ethyl lactate (Ethyl lactate) and aromatic acid acrylic polymers (Aromatic Acrylic polymer).
Further, the thickness of described silicon nitride layer is 200nm.
Further, in described step 8, carry out adopting the AZ300 developing liquid developing 100 seconds after electron-beam direct writing.
Further, in described step 10, the device surface that forms in step 9 evaporates grid metallic gold, titanium successively, and wherein the thickness of gold, titanium is respectively 400nm, 10nm.
Beneficial effect: contrast traditional three layers of glue electron-beam direct writing grid forming technique (as shown in Figure 1), can find: in the situation that grid pin metal live width is certain, utilize method of the present invention to assist twice grid metal forming technology to improve the geometrical stability degree of device T shape grid by medium, thereby greatly improve the process yield of grid smithcraft.The high finished product rate T shape grid that manufactured size is less improve performance of devices, particularly high frequency performance greatly;
Good process repeatability of the present invention, process window is large;
The process yield that the present invention makes small size T shape grid is high;
The less grid pin metal T shape grid that the present invention is applicable to various HEMT structure devices make or other need to form gluing and the developing process of glue pattern shown in Figure 3;
Controllability of the present invention is strong, uses business-like production level photoresist and developer solution, adopts electron beam exposure apparatus, method simple practical, workable, actual effect is fine, grid size reduction, rate of finished products to device improves, performance boost has good help, has fabulous market application foreground.
Description of drawings
Fig. 1 is the structural representation of traditional three layer photoetching glue electron-beam direct writing once-forming T shape grid.
Fig. 2 is the smithcraft of grid for the first time electron-beam direct writing schematic diagram of the present invention.
Fig. 3 is that the smithcraft of grid for the first time post-develop of the present invention is carved the glue generalized section.
Fig. 4 is the generalized section after the smithcraft of grid for the first time of the present invention is peeled off.
Fig. 5 is the generalized section after the smithcraft of grid for the first time somatomedin of the present invention.
Fig. 6 is the generalized section after the smithcraft of grid for the second time gluing of the present invention.
Fig. 7 is the generalized section after the smithcraft of grid for the second time of the present invention is developed.
Fig. 8 is the generalized section after the smithcraft of grid for the second time etching medium of the present invention.
Fig. 9 is the generalized section after the smithcraft of grid for the second time evaporated metal of the present invention.
Figure 10 is the generalized section of final T shape grid metal of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, further illustrate the present invention, should understand these embodiment only is used for explanation the present invention and is not used in and limits the scope of the invention, after having read the present invention, those skilled in the art all fall within the application's claims limited range to the modification of the various equivalent form of values of the present invention.
At first as shown in Figure 2, be coated with successively two-layer photoresist PMMA2/MMA3 at the upper surface of semiconductor device 1, the drying glue temperature and time be respectively 200 ℃ 20 seconds, 190 ℃ 100 seconds, bondline thickness is respectively 400nm, 250nm.Then carry out electron beam 5 and directly write, the live width 40nm of electron beam, dosage 200C/m
2, line 10uA, directly write rear use AZ300 and develop and namely obtained the glue shape that needs in 40 seconds, the oblique angle 6 of a pair of 45 ° of the upper interruption-forming of ground floor photoresist PMMA2 wherein, as shown in Figure 3.
Second step adopted aliphatic acid (Adipic Acid) wet method etch stop 80 seconds as shown in Figure 4, obtained grid recess 15.Grow successively after hydrochloric acid (40%HCl) is processed 40 seconds grid Titanium 16, platinum 17, gold 18, wherein the thickness of titanium, platinum, gold is respectively 30nm, 30nm, 150nm, remove ground floor photoresist, second layer photoresist and peel off metal on second layer photoresist, obtain grid metal 7 for the first time.
The 3rd step, growth thickness was the silicon nitride medium layer 8 of 200nm as shown in Figure 5.
The 4th step was coated with UV135 photoresist 9, bondline thickness 500nm as shown in Figure 6.Then electron-beam direct writing grid medium etching lines are for the second time directly write rear use AZ300 and are developed and namely obtained the glue shape that needs in 100 seconds, as shown in Figure 7.
The 5th goes on foot as shown in Figure 8, the etch silicon nitride dielectric layer: first etch into from top to bottom the upper surface of grid metal for the first time, more respectively to left and right the both sides etching, until expose the upper surface of grid metal for the first time at least fully.
The 6th step as shown in Figure 9, the grid metallic gold 19 of growing successively, titanium 20, wherein the thickness of gold, titanium is respectively 400nm, 10nm, removes the UV135 photoresist and peels off metal on the UV135 photoresist, obtains grid metal 10 for the second time.
In the 7th step, growth thickness is the dielectric passivation 11 of 300nm, finally forms the auxiliary twice forming T grid of medium, as shown in figure 10.
The final T shape grid than high finished product rate that adopt method of the present invention to make the long 80nm of grid, the impact of device parasitic parameter is less, and excellent performance, particularly high frequency performance are excellent.
Claims (9)
1. the manufacture method of the auxiliary twice forming T grid of medium, is characterized in that, comprises the following steps:
Step 1 provides semiconductor device, is coated with the ground floor photoresist on the surface of this semiconductor device;
Step 2 is coated with second layer photoresist on described the first photoresist;
Step 3 carries out adopting developing liquid developing after electron-beam direct writing, and the generation suitable for reading oblique angle at the ground floor photoresist forms grid metallic pattern for the first time;
Step 4, the semiconductor device surface corrosion grid recess that adopts wet method etch stop technique exposing;
Step 5 at the device surface evaporation grid metal that step 4 forms, is removed ground floor photoresist, second layer photoresist and is peeled off metal on second layer photoresist, obtains grid metal for the first time;
Step 6 is in the device surface grown silicon nitride layer of step 5 formation;
Step 7, the device surface that forms in step 6 is coated with the UV135 photoresist;
Step 8 carries out adopting developing liquid developing after electron-beam direct writing, exposes at least part of silicon nitride layer;
Step 9, the etch silicon nitride layer exposes grid metallic surface for the first time at least fully;
Step 10 at the device surface evaporation grid metal that step 9 forms, is removed the UV135 photoresist and is peeled off metal on the UV135 photoresist, obtains grid metal for the second time;
Step 11, the device surface growth of passivation dielectric layer step 10 forms forms complete T shape grid.
2. the manufacture method of the auxiliary twice forming T grid of a kind of medium according to claim 1, it is characterized in that: described ground floor photoresist is polyisobutene acid formicester photoresist, 200 ± 20 ℃ of drying glue temperature, 40 ± 30 seconds drying glue time.
3. the manufacture method of the auxiliary twice forming T grid of a kind of medium according to claim 1, it is characterized in that: described second layer photoresist is the methyl methacrylate photoresist, 190 ± 20 ℃ of drying glue temperature, 80 ± 30 seconds drying glue time.
4. the manufacture method of the auxiliary twice forming T grid of a kind of medium according to claim 1, it is characterized in that: in described step 3, the live width of electron beam is 40nm, and dosage is 200C/m
2, to carry out adopting the AZ300 developing liquid developing 50 ± 20 seconds after electron-beam direct writing, the angle at described oblique angle is with respect to vertical direction 40 ± 20 degree.
5. the manufacture method of the auxiliary twice forming T grid of a kind of medium according to claim 1, it is characterized in that: in described step 5, first use the device surface of salt acid treatment step four formation of concentration 40%, then evaporate successively grid Titanium, platinum, gold, wherein the thickness of titanium, platinum, gold is respectively 30nm, 30nm, 150 ± 50nm.
6. the manufacture method of the auxiliary twice forming T grid of a kind of medium according to claim 1, it is characterized in that: the main component of described UV135 photoresist is ethyl lactate and aromatic acid acrylic polymers.
7. the manufacture method of the auxiliary twice forming T grid of a kind of medium according to claim 1, it is characterized in that: the thickness of described silicon nitride layer is 200nm.
8. the manufacture method of the auxiliary twice forming T grid of a kind of medium according to claim 1, is characterized in that: in described step 8, carry out adopting the AZ300 developing liquid developing 100 seconds after electron-beam direct writing.
9. the manufacture method of the auxiliary twice forming T grid of a kind of medium according to claim 1, it is characterized in that: in described step 10, the device surface that forms in step 9 evaporates grid metallic gold, titanium successively, and wherein the thickness of gold, titanium is respectively 400nm, 10nm.
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| CN201310052169.7A CN103151252B (en) | 2013-02-18 | 2013-02-18 | A kind of medium assists the manufacture method of twice forming T grid |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1507072A (en) * | 2002-11-26 | 2004-06-23 | ��������ͨ���о�Ժ | Semiconductor device with T-shape grid electrode and producing method thereof |
| US20080108188A1 (en) * | 2006-11-03 | 2008-05-08 | Postech Foundation | T-gate forming method for high electron mobility transistor and gate structure thereof |
| US20080182369A1 (en) * | 2007-01-30 | 2008-07-31 | Postech Academy-Industry Foundation | T-gate forming method and metamorphic high electron mobility transistor fabricating method using the same |
| CN101330010A (en) * | 2007-06-20 | 2008-12-24 | 中国科学院微电子研究所 | Method for preparing T type HBT emitter electrode/HEMT gate |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1507072A (en) * | 2002-11-26 | 2004-06-23 | ��������ͨ���о�Ժ | Semiconductor device with T-shape grid electrode and producing method thereof |
| US20080108188A1 (en) * | 2006-11-03 | 2008-05-08 | Postech Foundation | T-gate forming method for high electron mobility transistor and gate structure thereof |
| US20080182369A1 (en) * | 2007-01-30 | 2008-07-31 | Postech Academy-Industry Foundation | T-gate forming method and metamorphic high electron mobility transistor fabricating method using the same |
| CN101330010A (en) * | 2007-06-20 | 2008-12-24 | 中国科学院微电子研究所 | Method for preparing T type HBT emitter electrode/HEMT gate |
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