CN107293482A - A kind of preparation method of GaN high electron mobility transistor gate electrode - Google Patents
A kind of preparation method of GaN high electron mobility transistor gate electrode Download PDFInfo
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- CN107293482A CN107293482A CN201710448653.XA CN201710448653A CN107293482A CN 107293482 A CN107293482 A CN 107293482A CN 201710448653 A CN201710448653 A CN 201710448653A CN 107293482 A CN107293482 A CN 107293482A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000004544 sputter deposition Methods 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 7
- 238000005566 electron beam evaporation Methods 0.000 claims abstract description 5
- 230000008569 process Effects 0.000 claims abstract description 4
- 239000003292 glue Substances 0.000 claims description 14
- 238000001259 photo etching Methods 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 230000035807 sensation Effects 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract 1
- 208000002925 dental caries Diseases 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- 238000002203 pretreatment Methods 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 239000010931 gold Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The invention discloses a kind of preparation method of GaN high electron mobility transistor gate electrode：Grid line bar is defined using step-by-step exposure machine, contracting adhesive process is used again by grid line bar feature size downsizing, then, the silicon nitride medium under grid line bar opening is etched using fluorine base gas in ICP cavitys, photoresist is removed after the completion of etching, then even resist coating exposure obtains grid cover lines, and sputtering unit splash-proofing sputtering metal W is entered after pre-treatment, then take out and insert electron beam evaporation platform deposit Ni/Pt/Au, last stripped technique formation gate electrode.Method of the present invention is compared with the method that traditional use electron beam evaporation metal makes gate electrode, and the advantage is that can be effectively improved the side wall fillibility of grid metal, reduces element leakage, improves device reliability.
Description
Technical field
Field, more particularly to a kind of GaN high electron mobility crystal are fabricated the present invention relates to compound semiconductor
The preparation method of pipe gate electrode.
Background technology
GaN HEMTs (HEMT) distinctive high electron mobility, high two-dimensional electron gas surface density, high strike
Wear electric field so that it possesses higher power output density, be considered as the preferred skill of RF/Microwave power amplifier of future generation
Art.
With the sharp increase of field-effect transistor (FET) frequency applications demand, boost device cut-off frequency fTJust seem
All the more it is important.
It is used as the important parameter for characterizing transistor high speed performance, device cut-off frequency fTApproximate formula be：
Wherein vsFor the saturation migration rate of carrier, LgIt is long for device gate.As can be seen that cutoff frequency of the grid length to device
Rate has conclusive influence.
The grid length for reducing device is the most straightforward approach for lifting its frequency performance, generally, when target grid length is less than 0.5 μm
When can consider to take T-shaped grid structure, its object is to reduce device gate it is long while increase gate resistance not too much.
Due to the particularity of gallium nitride device, one layer of Si can be grown before grid technique3N4Medium is used to protect surface,
Suppress surface state.In subsequent grid technique, typically T-shaped grid can be made using the method for two step photoetching：First step photoetching is thin
Lines are used to etch Si3N4, while defining the long size of grid；Second step photoetching is using negtive photoresist or reversion glue, for defining grid cover and passing through
Stripping technology formation gate electrode.
Such scheme is primarily present following deficiency：The lines that the usual first step makes by lithography are very thin, below 0.5 μm, this
When etch the Si of 100nm or so depth still further below3N4Medium, due to lines perforate very little, but also with certain depth, is just caused
Conventional evaporation technology makes it difficult for metal to be filled up completely with the groove, and to there is reliability hidden for the device that not exclusively frequently can lead to of filling
Suffer from.
The content of the invention
The present invention's fills incomplete problem mainly for grid metal in GaN high electron mobility transistor, proposes
A kind of preparation method of GaN high electron mobility transistor gate electrode.
The technical solution adopted by the present invention is：A kind of preparation method of GaN high electron mobility transistor gate electrode,
Comprise the following steps：
Step 1：GaN HEMT device surface passivation a layer thickness after having completed source-drain electrode and isolation technology at one
ForSi3N4Medium, and high light sensation positive photoresist is coated thereon, using 100 DEG C of vacuum hot plates, toast 90s；
Step 2：Exposed, developed using stepper, the fine rule of minimum 0.4 μm of characteristic size is obtained after development
Bar, toasts 60-120s under the conditions of 110-130 DEG C；
Step 3：Complete after above-mentioned steps, the uniform coating contracting glue in described GaN HEMT devices, and in 80-90 DEG C of bar
Front baking 60-90s under part, it is again rear under the conditions of 100-120 DEG C afterwards to dry 60-90s；After baking is finished, cleaned, gone using ionized water
Except unnecessary contracting glue, continue to toast 30-60s under the conditions of 110-120 DEG C, obtain the grid-type bar of 0.2-0.3 μm of width, and withSpeed complete the operation of bottoming glue, the time is 20-30s；
Step 4：CF is used in sense coupling machine4Etch Si3N4, the speed of bottoming glue isTime is 20-30s；And 1-2min is cleaned with 10%HCl solution, removed photoresist；
Step 5：Uniform coating negtive photoresist, 2.0-2.5 μm of thickness, then photoetching grid cover lines, the width of grid cover is 0.8-1.5 μ
m；
Step 6：At the lines of photoetching deposit gate metal, the gate metal sequentially consist of W, Ni, Pt,
Au, wherein, W is made using sputtering technology, and thickness 30-40nm, Ni/Pt/Au are made using electron beam evaporation process, thickness point
It is not：Ni thickness 40-60nm, Pt thickness 40-60nm, Au thickness 400-600nm, and shelled using 90 DEG C of methylpyrrolidone solutions
From 30-60min.
Preferably, the gate metal is T-shaped grid, and its metal purity must reach 5N ranks or more excellent.
Preferably, the contracting glue can react generation polymer with photoresist surface, and the part not reacted is then
It is washable to remove, the characteristic size to reduce lines.
Preferably, by controlling high light sensation positive photoresist angle and sense coupling machine engraving to lose in the step 4
Bias power, can control Si3N4The angle of groove.
The situation of prior art is different from, the beneficial effects of the invention are as follows：
1st, the present invention makes layer of metal W before grid metal evaporation by the way of sputtering, can significantly improve existing skill
Art grid metal is to Si3N4Groove fills incomplete problem, because W adhesive capacities are moderate, does not interfere with stripping；
2nd, W metal work functions 4.5eV, it is suitable with Ni 4.6V, possess larger work function so as to semiconductor surface shape
Into higher potential barrier, there will not be considerable influence to Schottky barrier.
3rd, gate metal oxidation resistance is strong, is oxidized when can avoiding switching between sputtering and evaporation equipment,
Its adhesion is moderate, can avoid causing to peel off difficult situation.
4th, Si is etched3N4Medium is that, using high light sensation positive photoresist as mask, due to using ICP-RIE etching systems, selectivity is very
It is good.
Brief description of the drawings
Fig. 1 be wafer it is even apply high photosensitive positive photoresist and expose, develop after structure chart；
Fig. 2 is the structural representation after contracting glue and high photosensitive positive photoresist reaction generation polymer, down feature sizes；
Fig. 3 is the etching Si in sense coupling machine (ICP-RIE)3N4The device architecture formed after medium
Schematic diagram；
Fig. 4 is the structure chart after even painting negtive photoresist and photoetching, development；
Fig. 5 is gate metal sputtering, evaporates and peel off the device junction composition to be formed after gate electrode
Fig. 6 is gate metal structural representation.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
A kind of preparation method of GaN high electron mobility transistor gate electrode, comprises the following steps：
As shown in figure 1, the GaN HEMT device surface passivation thickness after having completed source-drain electrode and isolation technology at one
ForSi3N4Medium 2, and high light sensation positive photoresist is coated thereon, using 100 DEG C of vacuum hot plates, toast 90s；
Then stepper exposure imaging is used, 60-120s is toasted under the conditions of 110-130 DEG C, development obtains characteristic size and is
0.4-0.7 μm of hachure；
Complete after above-mentioned steps, as shown in Fig. 2 in uniform coating contracting glue, and the front baking 60- under the conditions of 80-90 DEG C thereon
90s, it is again rear under the conditions of 100-120 DEG C afterwards to dry 60-90s, after baking is finished；Occur at a certain temperature with photoresist surface
Reaction generation polymer 1, the part not reacted is then washable to be removed, and continues to toast 30-60s under the conditions of 110-120 DEG C,
Obtain the grid-type bar of 0.2-0.3 μm of width, and withSpeed, carry out 20-30s bottoming glue operation, can with this
With by the feature size downsizing of lines；
Complete after above-mentioned steps, CF is used in sense coupling machine (ICP-RIE)4Etch Si3N4It is situated between
Matter, etch rate is 20-30nm/min, etch period 5-8min, and cleans 1-2min with 10%HCl solution, is removed photoresist, and is formed such as
Device architecture shown in Fig. 3；
Uniform coating thickness is 2-2.5 μm of negtive photoresist, then the grid cover lines that photoetching width is 0.8-1.5 μm, forms such as Fig. 4
Shown structure；
Complete after above-mentioned steps, as shown in figure 5, gate metal 4 is deposited at the lines of photoetching, the gate metal 4
Structure is as shown in fig. 6, the gate metal 4 is T-shaped grid, and its metal purity must reach 5N ranks or more excellent, and gate metal 4 is under
It is supreme to be followed successively by tungsten (W) 41, nickel (Ni) 42, platinum (Pt) 43, gold (Au) 44, wherein, W is made using sputtering technology, thickness 30-
40nm, Ni/Pt/Au are made using electron beam evaporation process, and thickness is respectively：Ni thickness 40-60nm, Pt thickness 40-60nm, Au
Thickness 400-600nm, and 30-60min is peeled off using methylpyrrolidone solution, complete element manufacturing.
Embodiments of the invention are the foregoing is only, are not intended to limit the scope of the invention, it is every to utilize this hair
Equivalent structure or equivalent flow conversion that bright specification and accompanying drawing content are made, or directly or indirectly it is used in other related skills
Art field, is included within the scope of the present invention.
Claims (4)
1. a kind of preparation method of GaN high electron mobility transistor gate electrode, comprises the following steps：
Step 1：GaN HEMT device surface passivation a layer thickness after source-drain electrode and isolation technology has been completed at one isSi3N4Medium, and high light sensation positive photoresist is coated thereon, using 100 DEG C of vacuum hot plates, toast 90s；
Step 2：Exposed, developed using stepper, the hachure of minimum 0.4 μm of characteristic size is obtained after development,
60-120s is toasted under the conditions of 110-130 DEG C；
Step 3：Complete after above-mentioned steps, the uniform coating contracting glue in described GaN HEMT devices, and under the conditions of 80-90 DEG C
Front baking 60-90s, it is again rear under the conditions of 100-120 DEG C afterwards to dry 60-90s；After baking is finished, cleaned, removed many using ionized water
Remaining contracting glue, continues to toast 30-60s under the conditions of 110-120 DEG C, obtains the grid-type bar of 0.2-0.3 μm of width, and withSpeed complete the operation of bottoming glue, the time is 20-30s；
Step 4：CF is used in sense coupling machine4Etch Si3N4, the speed of bottoming glue is
Time is 20-30s；And 1-2min is cleaned with 10%HCl solution, removed photoresist；
Step 5：Uniform coating negtive photoresist, 2.0-2.5 μm of thickness, then photoetching grid cover lines, the width of grid cover is 0.8-1.5 μm；
Step 6：Gate metal is deposited at the lines of photoetching, the gate metal sequentially consists of W, Ni, Pt, Au, its
In, W is made using sputtering technology, and thickness 30-40nm, Ni/Pt/Au are made using electron beam evaporation process, and thickness is respectively：
Ni thickness 40-60nm, Pt thickness 40-60nm, Au thickness 400-600nm, and peel off 30- using 90 DEG C of methylpyrrolidone solutions
60min。
2. the preparation method of GaN high electron mobility transistor gate electrode according to claim 1, it is characterised in that：
The gate metal is T-shaped grid, and its metal purity must reach 5N ranks or more excellent.
3. the preparation method of GaN high electron mobility transistor gate electrode according to claim 1, it is characterised in that：
The contracting glue can be reacted generation polymer with photoresist surface, and the part not reacted is then washable to be removed, and is used to
Reduce the characteristic size of lines.
4. the preparation method of GaN high electron mobility transistor gate electrode according to claim 1, it is characterised in that：
The step 4 can be controlled by controlling high light sensation positive photoresist angle and sense coupling machine engraving to lose bias power
Si3N4The angle of groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710448653.XA CN107293482B (en) | 2017-06-14 | 2017-06-14 | Method for manufacturing gate electrode of gallium nitride high electron mobility transistor |
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|---|---|---|---|
| CN201710448653.XA CN107293482B (en) | 2017-06-14 | 2017-06-14 | Method for manufacturing gate electrode of gallium nitride high electron mobility transistor |
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| CN107293482B CN107293482B (en) | 2021-03-23 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110429028A (en) * | 2019-08-01 | 2019-11-08 | 福建省福联集成电路有限公司 | A kind of transistor device is enhanced and depletion type grid integrated manufacturing method and device |
| CN110581170A (en) * | 2019-08-13 | 2019-12-17 | 中山市华南理工大学现代产业技术研究院 | GaN-based MIS-HEMT device with Г type gate and preparation method thereof |
| CN112002641A (en) * | 2020-07-21 | 2020-11-27 | 中电科工程建设有限公司 | Method for manufacturing grid of GaN power device for 5G communication |
| CN112335023A (en) * | 2018-06-27 | 2021-02-05 | 三菱电机株式会社 | Method for manufacturing semiconductor device |
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| US6395606B1 (en) * | 1999-07-21 | 2002-05-28 | Advanced Micro Devices, Inc. | MOSFET with metal in gate for reduced gate resistance |
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| CN101431867A (en) * | 2007-11-05 | 2009-05-13 | 松下电器产业株式会社 | Mounting structure |
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| CN106783570A (en) * | 2016-12-28 | 2017-05-31 | 成都海威华芯科技有限公司 | A kind of preparation method of the T-shaped grid of HEMT |
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| US6395606B1 (en) * | 1999-07-21 | 2002-05-28 | Advanced Micro Devices, Inc. | MOSFET with metal in gate for reduced gate resistance |
| CN101162703A (en) * | 2006-10-12 | 2008-04-16 | 株式会社半导体能源研究所 | Method for manufacturing display device, and etching apparatus |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110429028A (en) * | 2019-08-01 | 2019-11-08 | 福建省福联集成电路有限公司 | A kind of transistor device is enhanced and depletion type grid integrated manufacturing method and device |
| CN110581170A (en) * | 2019-08-13 | 2019-12-17 | 中山市华南理工大学现代产业技术研究院 | GaN-based MIS-HEMT device with Г type gate and preparation method thereof |
| CN112002641A (en) * | 2020-07-21 | 2020-11-27 | 中电科工程建设有限公司 | Method for manufacturing grid of GaN power device for 5G communication |
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