CN106684007B - A kind of production method of semiconductor technology air bridges - Google Patents
A kind of production method of semiconductor technology air bridges Download PDFInfo
- Publication number
- CN106684007B CN106684007B CN201710092191.2A CN201710092191A CN106684007B CN 106684007 B CN106684007 B CN 106684007B CN 201710092191 A CN201710092191 A CN 201710092191A CN 106684007 B CN106684007 B CN 106684007B
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- sequence
- layer
- sacrificial layer
- glue
- photolithography glue
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
- H01L2224/85002—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate being a removable or sacrificial coating
Abstract
The invention discloses a kind of production methods of semiconductor technology air bridges, the present invention adds the method for AZ52 sequence of photolithography glue to make sacrificial layer and subsequent electrode pattern using LOR sequence of photolithography glue, the method can select the LOR photoresist of different model according to the different height of step, and the different gluing revolving speed of selection, can also single, double layer gluing flexibly use；Because LOR sequence of photolithography glue is non-photo-sensing material, AZ52 sequence of photolithography glue belongs to photosensitive material, line width structure is determined by upper layer AZ52 sequence of photolithography glue, using the high-resolution and high photobehavior of upper layer AZ52 sequence of photolithography glue, can be applied in high step and the device architecture of small line width.
Description
Technical field
The present invention relates to air bridges preparation technical fields, and in particular to a kind of production method of semiconductor technology air bridges.
Background technique
In high frequency and hyperfrequency device, need to reduce the parasitic capacitance of metal electrode lead to improve the sensitive of device
Degree.Since the dielectric constant values of air are close to 1, realize that metal electrode lead can greatly reduce parasitic electricity using air bridge method
Hold, avoids using the process flow for depositing expensive patterns of low dielectric constant film material；Air bridge structure is electricity simultaneously
Pole lead provides low thermal resistance connection and heat dissipation channel.
At present, the sacrifice of the positive photoresists as air-bridge process such as the commonly used AZ series of the prior art and S18 series
Layer, or evaporate one layer of metal layer on sacrificial layer and sacrificial layer is protected as seed layer；Metal is made on sacrificial layer
The positive photoresist or multilayer positive photoresist that single monolayer thick is generallyd use when electrode pattern do mask layer；(1) positive-tone photo is used
Glue does the sacrificial layer of air-bridge process, and the high temperature resistant property of positive photoresist is limited, and temperature is excessively high when high-temperature baking will cause carbon
Change, cause subsequent sacrificial layer to go when removing unclean, if baking temperature is not high enough, because positive photoresist has photosensitive spy
Property, when arriving subsequent production metal electrode graph exposure step sacrificial layer will photosensitive and developed liquid erosion surface, cause sky
Air bridge metal lead wire uneven surface protects sacrificial layer as seed layer if evaporating one layer of metal on sacrificial layer,
It just will increase process costs, and also need to remove seed layer with caustic solution below, keep process flow more many and diverse；(2) exist
Photoresist mask layer when doing sacrificial layer using positive photoresist on high step substrate and making electrode pattern below, step are excessively high
Thicker positive photoresist must be used by determining, thick positive photoresist resolution ratio is lower, therefore the method can not be applied
In (such as 2um or less line width graphic structure) on the device of the small line width of high step.
Summary of the invention
The present invention provides a kind of production method of semiconductor technology air bridges, the metal electrode suitable for different step heights
Lead.
The present invention is achieved technical problem to be solved especially by following technical scheme:
In the present invention, a kind of production method of semiconductor technology air bridges, steps are as follows for the preparation method:
(1) completed electrode step etching substrate on spin coating LOR sequence of photolithography glue as sacrificial layer；
(2) mask layer of the one layer of AZ52 sequence of photolithography glue of spin coating as sacrificial layer on sacrificial layer, utilizes AZ52 series light
The photosensitive property and LOR photoresist non-photo-sensing of photoresist but the characteristic for being dissolved in developer solution, after exposure and imaging technology, by light
The graphic structure for carving mask plate is transferred on 2 layer photoresist films, sacrificial layer graphic structure required for being formed；
(3) there is photobehavior using AZ52 sequence of photolithography glue, general expose is carried out to substrate and (is not having to lithography mask version
In the case of be exposed), according to AZ52 sequence of photolithography glue rate of dissolution in developer solution, set corresponding developing time, will
The removal of upper layer AZ52 sequence of photolithography glue, leaves behind sacrifice layer photoresist；
(4) high temperature hot plate for carrying out 250-300 DEG C to substrate is toasted, since LOR sequence of photolithography glue has good reflux
Characteristic, the sacrificial layer after high-temperature baking form the domes of smooth surface；
(5) the LOR sequence of photolithography glue (sacrificial layer) after high-temperature baking has very strong anti-development and non-photo-sensing characteristic,
Spin coating LOR sequence of photolithography glue adds AZ52 sequence of photolithography glue again on substrate, this double-tiered arch dam is used as the exposure mask of sacrificial layer
(it is because the double-deck glue can form inverted trapezoidal hatch frame after development, in metal coating that this step does exposure mask using the double-deck glue to layer
After when removing photoresist glue film be easily peeled off；), by exposure and imaging, metal electrode graphic structure required for being outputed on sacrificial layer,
Sacrificial layer is intact at this time；
(6) substrate is subjected to electron beam evaporation or magnetron sputtering, a thickness gold electrode lead is deposited on sacrificial layer；
(7) N-Methyl pyrrolidone that the substrate after thick gold vapor deposition is placed in 100 DEG C is gone in glue to impregnate 15~20 minutes,
The double-deck glue mask layer and sacrificial layer are removed, the air bridge structure that rear metal electrode lead forms arch is cleaned up.
Preferably, AZ52 sequence of photolithography glue can be replaced with S18 positive photoresist in the step (2).
Preferably, in the step (1), the photoresist of LOR series different model can be selected according to the height of electrode step,
Or by adjusting the revolving speed of gluing come adjust glue thickness, if electrode step height be greater than 5um, 2 layers of LOR sequence of photolithography glue of spin coating with
Increase sacrificial layer thickness, it is ensured that sacrificial layer glue film covers top electrode step.
In the present invention,
1) the method for the present invention is using LOR sequence of photolithography glue as sacrificial layer, and sacrificial layer can form table after high-temperature baking
The smooth domes in face have very strong anti-development, non-photo-sensing and are soluble in the characteristics such as glue, to production electrode figure below
Sacrificial layer is able to maintain intactly, without increasing coat of metal in the development step of shape；
2) present invention adds the method for AZ52 sequence of photolithography glue to make sacrificial layer and subsequent electrode using LOR sequence of photolithography glue
Figure, the method can select the LOR photoresist of different model, and the gluing turn that selection is different according to the different height of step
Speed, can also single, double layer gluing flexibly use；Because LOR sequence of photolithography glue is non-photo-sensing material, AZ52 sequence of photolithography glue belongs to photosensitive
Material, line width structure are determined by upper layer AZ52 sequence of photolithography glue, utilize the high-resolution and high sense of upper layer AZ52 sequence of photolithography glue
Light characteristic can be applied in high step and the device architecture of small line width.
Detailed description of the invention
Structural schematic diagram in the step of Fig. 1 is a kind of semiconductor technology method for producing air bridge (2)；
Fig. 2 is structural schematic diagram in a kind of production method step (3) of semiconductor technology air bridges；
Fig. 3 is structural schematic diagram in a kind of production method step (4) of semiconductor technology air bridges；
Fig. 4 is structural schematic diagram in a kind of production method step (6) of semiconductor technology air bridges；
Fig. 5 is the air bridge structure schematic diagram of arch in a kind of production method step (7) of semiconductor technology air bridges.
Specific embodiment
It elaborates below to the embodiment of the present invention, the present embodiment carries out under the premise of the technical scheme of the present invention
Implement, the detailed implementation method and specific operation process are given, but protection scope of the present invention is not limited to following implementation
Example.
Following embodiment is with a kind of production of semiconductor technology air bridges of the present invention shown in attached drawing 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5
Implemented that (remarks: 1 represents upper electrode layer, and 2 represent lower electrode layer, and 3 represent base substrate insulating layer, and 4 represent for method
LOR sequence of photolithography glue sacrificial layer, 5 represent AZ52 sequence of photolithography glue mask layer, and 6 represent thick gold electrode lead.):
Embodiment 1
This is mainly used in preparation air bridges on low electrode step, and (as shown in figure, " 1 " is added small with " 2 " step
In 4um), use single layer LOR photoresist as sacrificial layer, specific preparation process is as follows:
1) on the substrate (as shown in figure, " 1 " is added with " 2 " step is less than 4um) for having completed electrode step etching
1 layer of LOR20A photoresist of spin coating is as sacrificial layer.
2) mask layer of the one layer of AZ52 sequence of photolithography glue of spin coating as sacrificial layer on sacrificial layer, by exposure and imaging skill
It is postoperative, the graphic structure of mask blank is transferred on photoresist film, sacrificial layer graphic structure (one institute of figure required for being formed
Show).
3) substrate being carried out general exposure (being both exposed in the case where not having to lithography mask version), develop 50s in developer solution,
Upper layer AZ52 sequence of photolithography glue is removed, leaves behind and sacrifices layer photoresist (shown in figure two).
4) high temperature hot plate for carrying out 250-300 degree to substrate is toasted, and the sacrificial layer after high-temperature baking forms smooth surface
Domes (shown in figure three).
5) 1 layer of LOR20A photoresist of spin coating adds AZ52 sequence of photolithography glue again on substrate, this double-tiered arch dam is used to make
For the mask layer of sacrificial layer, by exposure and imaging, metal electrode graphic structure required for being outputed on sacrificial layer.
6) substrate is subjected to electron beam evaporation or magnetron sputtering, a thickness gold is deposited on sacrificial layer as contact conductor
(shown in figure four).
7) N-Methyl pyrrolidone that the substrate after thick gold vapor deposition is placed in 100 DEG C is gone in glue to impregnate 15~20 minutes,
The double-deck glue mask layer and sacrificial layer are removed, air bridge structure (five institute of figure that rear metal electrode lead forms arch is cleaned up
Show).
Embodiment 2
The example is mainly used in preparation air bridges on higher electrode step, and (as shown in figure, " 1 " is added with " 2 " step
Greater than 4um), use 2 layers of LOR photoresist as sacrificial layer, specific preparation process is as follows:
1) on the substrate (as shown in figure, " 1 " is added with " 2 " step is greater than 4um) for having completed electrode step etching
Successively 2 layers of LOR20A photoresist of spin coating are as sacrificial layer.
2) mask layer of the one layer of AZ52 sequence of photolithography glue of spin coating as sacrificial layer on sacrificial layer, by exposure and imaging skill
It is postoperative, the graphic structure of mask blank is transferred on photoresist film, sacrificial layer graphic structure (one institute of figure required for being formed
Show).
3) substrate being carried out general exposure (being both exposed in the case where not having to lithography mask version), develop 50s in developer solution,
Upper layer AZ52 sequence of photolithography glue is removed, leaves behind and sacrifices layer photoresist (shown in figure two).
4) high temperature hot plate for carrying out 250-300 degree to substrate is toasted, and the sacrificial layer after high-temperature baking forms smooth surface
Domes (shown in figure three).
5) 1 layer of LOR20A photoresist of spin coating adds AZ52 sequence of photolithography glue again on substrate, this double-tiered arch dam is used to make
For the mask layer of sacrificial layer, by exposure and imaging, metal electrode graphic structure required for being outputed on sacrificial layer.
6) substrate is subjected to electron beam evaporation or magnetron sputtering, a thickness gold is deposited on sacrificial layer as contact conductor
(shown in figure four).
7) N-Methyl pyrrolidone that the substrate after thick gold vapor deposition is placed in 100 DEG C is gone in glue to impregnate 15~20 minutes,
The double-deck glue mask layer and sacrificial layer are removed, air bridge structure (five institute of figure that rear metal electrode lead forms arch is cleaned up
Show).
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar can understand the contents of the present invention and be implemented, and it is not intended to limit the scope of the present invention, it is all according to the present invention
Equivalent change or modification made by Spirit Essence, should be covered by the scope of protection of the present invention.
Claims (3)
1. a kind of production method of semiconductor technology air bridges, which is characterized in that steps are as follows for the production method:
(1) completed electrode step etching substrate on spin coating LOR sequence of photolithography glue as sacrificial layer；
(2) mask layer of the one layer of AZ52 sequence of photolithography glue of spin coating as sacrificial layer on sacrificial layer, by exposure and imaging technology
Afterwards, the graphic structure of mask blank is transferred on 2 layer photoresist films, sacrificial layer graphic structure required for being formed；
(3) general expose (i.e. without being exposed in the case where lithography mask version), according to AZ52 sequence of photolithography glue is carried out to substrate
Rate of dissolution in developer solution sets corresponding developing time, and upper layer AZ52 sequence of photolithography glue is removed, sacrificial layer is left behind
Photoresist；
(4) high temperature hot plate for carrying out 250-300 degree to substrate is toasted, and the sacrificial layer after high-temperature baking forms the arch of smooth surface
Structure；
(5) spin coating LOR sequence of photolithography glue adds AZ52 sequence of photolithography glue again on substrate, this double-tiered arch dam is used as sacrificing
The mask layer of layer, by exposure and imaging, metal electrode graphic structure required for outputing on sacrificial layer, sacrificial layer is complete at this time
It is good lossless；
(6) substrate is subjected to electron beam evaporation or magnetron sputtering, a thickness gold electrode lead is deposited on sacrificial layer；
(7) N-Methyl pyrrolidone that the substrate after thick gold vapor deposition is placed in 100 DEG C is gone in glue to impregnate 15~20 minutes, is removed
The double-deck glue mask layer and sacrificial layer clean up the air bridge structure that rear metal electrode lead forms arch.
2. a kind of production method of semiconductor technology air bridges according to claim 1, which is characterized in that the step
(2) AZ52 sequence of photolithography glue can be replaced with S18 positive photoresist in.
3. a kind of production method of semiconductor technology air bridges according to claim 1, which is characterized in that the step
(1) in, the photoresist of LOR series different model is selected according to the height of electrode step, or adjust by adjusting the revolving speed of gluing
Whole glue is thick, if electrode step height is greater than 5um, 2 layers of LOR sequence of photolithography glue of spin coating are to increase sacrificial layer thickness, it is ensured that sacrifices
Layer glue film covers top electrode step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710092191.2A CN106684007B (en) | 2017-02-21 | 2017-02-21 | A kind of production method of semiconductor technology air bridges |
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| CN201710092191.2A CN106684007B (en) | 2017-02-21 | 2017-02-21 | A kind of production method of semiconductor technology air bridges |
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| CN106684007B true CN106684007B (en) | 2019-03-15 |
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| CN108649428B (en) * | 2018-06-26 | 2020-10-30 | 天津华慧芯科技集团有限公司 | Realizing process of pattern window on ridge of RWG type DFB laser |
| CN109279572A (en) * | 2018-11-19 | 2019-01-29 | 中国科学技术大学 | Superconductor Vacuum bridge and preparation method thereof |
| CN112133790A (en) * | 2020-09-25 | 2020-12-25 | 武汉敏芯半导体股份有限公司 | Preparation method of high-speed photoelectric detector |
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| CN101276778A (en) * | 2007-03-28 | 2008-10-01 | 中国科学院微电子研究所 | Method for preparing air bridge using photosensitive subbing |
| CN100468637C (en) * | 2007-06-28 | 2009-03-11 | 西安电子科技大学 | Method for producing air bridge of compound semiconductor microwave high power device |
| US7948042B2 (en) * | 2008-03-03 | 2011-05-24 | The Regents Of The University Of California | Suspended structures |
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Effective date of registration: 20191223 Address after: 214000 room 1022, building 1, No. 311, Yanxin Road, Huishan Economic Development Zone, Wuxi City, Jiangsu Province Patentee after: Wuxi Feiman Technology Co., Ltd Address before: 0209, room 0211, building 214000, building 1, No. 311, Yan Xin Road, Huishan Economic Development Zone, Jiangsu, Wuxi Patentee before: WUXI YINGXIN SEMICONDUCTOR TECHNOLOGY CO., LTD. |