CN101251713A - Method for deep-UV lithography making T type gate - Google Patents
Method for deep-UV lithography making T type gate Download PDFInfo
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- CN101251713A CN101251713A CNA2008100547376A CN200810054737A CN101251713A CN 101251713 A CN101251713 A CN 101251713A CN A2008100547376 A CNA2008100547376 A CN A2008100547376A CN 200810054737 A CN200810054737 A CN 200810054737A CN 101251713 A CN101251713 A CN 101251713A
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- deep
- photoresist
- exposure
- lithography
- grate
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000000276 deep-ultraviolet lithography Methods 0.000 title claims abstract description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000011161 development Methods 0.000 claims abstract description 7
- 238000012545 processing Methods 0.000 claims abstract description 7
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 238000001459 lithography Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 238000003384 imaging method Methods 0.000 claims 1
- 239000004922 lacquer Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000001259 photo etching Methods 0.000 abstract description 8
- 150000001875 compounds Chemical class 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 5
- 238000010894 electron beam technology Methods 0.000 abstract description 3
- 150000002739 metals Chemical class 0.000 abstract 2
- 238000001883 metal evaporation Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000000349 chromosome Anatomy 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- -1 tetramethyl aqua ammonia Chemical compound 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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Abstract
The invention discloses a method for manufacturing a T-shaped grate by utilization of deep-UV lithography, comprising the following steps that: a substrate is cleaned and dried and then coated by chemical amplifying deep-UV photoresist; contraposition, alignment, exposure and development are performed by adoption of a deep-UV exposure machine, and a grate root photoresist window graph is formed initially; the photoresist window graph which is formed by exposure is shrunk by adoption of chemical shrinking solution; electron beam slushing compounds are coated; chemical amplifying deep-UV photoresist is coated; contraposition, alignment, exposure and development are performed by adoption of the deep-UV exposure machine; exposure and development are performed by adoption of deep-UV electron beam slushing compounds, and a grate cap photoresist window graph is formed; grate electrode metals are deposited by adoption of the metal evaporation method; the metals are peeled off and the photoresist is stripped, and then manufacture of the T-shaped grate is finished. The method makes a grate root of the T-shaped grate break through the manufacturing limit of superfine lines of a photoetching plate, saves the manufacturing cost of the photoetching plate and simultaneously can realize large-scale deep-submicron processing of compound semiconductor devices.
Description
Technical field
The invention belongs to the microelectronics manufacture field in the semiconductor technology, especially relate to a kind of method of deep-UV lithography making T type gate.
Background technology
In the element manufacturing of high frequency, microwave regime, grid are long short more, and frequency of operation is also just high more, because the high-frequency gain of device is subjected to the influence of grid parasitic parameter gate resistance Rg and gate capacitance Cgs also very big except being subjected to grid length influences.It is long to reduce grid, gate capacitance Cgs is reduced, but will guarantee that gate resistance Rg can not reduce, and for solving the contradiction of Rg and Cgs, adopting "T"-shaped gate technique is the most effective at present technology approach.Many different calls are arranged at present, as: "T"-shaped grid, mushroom-shaped grid, " Γ " shape grid etc. are according to its shape and the call of imagery.In the field that semiconductor devices is made, the processing of hachure is technological difficulties, also is the leading indicator of weighing the device level, equally, in the compound semiconductor device manufacture craft, the making of grid is crucial manufacture crafts, and the processing technology of T-shape grid is the difficult point in the difficult point especially; At present, the general method of beamwriter lithography and multilayer glue that adopts is made the T-shape grid in the deep-submicron compound semiconductor device is made, generally, in actual process is made, adopt the I line exposing grid length of T-shape grid can be accomplished 0.35 micron, adopt beamwriter lithography grid length can be accomplished below 0.1 micron, at present both at home and abroad existing in this respect patent and a large amount of relevant papers, but, owing to be subjected to the influence of equipment, the working (machining) efficiency that beamwriter lithography is made the T-shape grid is extremely low, and the T-shape grid grid length that adopts the i linear light to scribe work can not satisfy device to the long requirement that improves day by day of grid; The present invention adopts the method for deep ultraviolet (DUV) photoetching and multilayer glue, and adopts the chemical thin resolution enhance technology that contracts, and further grid length is reduced, and has increased the tolerance of technology.
Summary of the invention
The technical issues that need to address of the present invention provide a kind of method that adopts deep-UV lithography making T type gate, adopt the chemical thin resolution enhance technology that contracts, and further grid length are reduced, and have increased the tolerance of technology.
For addressing the above problem, the technical solution used in the present invention is: a kind of method of deep-UV lithography making T type gate, and this method comprises following step:
Step 7, employing deep ultraviolet exposure machine carry out contraposition alignment, exposure, development, make window on chemically-amplified resist by lithography,
Step 8, employing deep UV (ultraviolet light) are exposed to electron sensitive resist, and develop, and form the photoresist graph window of grid cover,
The metal of the method deposit gate electrode of step 9, employing evaporation of metal,
Step 10, stripping metal, remove photoresist, finish the making of T-shape grid.
Described deep ultraviolet chemically-amplified resist is the photoresist that is used for the 248nm deep-UV lithography.
The described thin solution that contracts is the RELACS that adopts Clariant company
TMMaterial.
Adopt the beneficial effect that technique scheme produced to be: to adopt this method; make the grid length of T-shape grid can break through the restriction that reticle extra fine wire bar is made; save the manufacturing cost of reticle, can make the deep-submicron processing of compound semiconductor device realize scale simultaneously.
Description of drawings
Fig. 1 is a substrat structure synoptic diagram of the present invention;
Fig. 2 is the substrat structure synoptic diagram that the present invention applies photoresist;
Fig. 3 is Fig. 2 photoetching synoptic diagram of the present invention;
Fig. 4 is a structural representation after Fig. 2 photoetching of the present invention;
Fig. 5 is a structural representation after Fig. 4 of the present invention contracts carefully;
Fig. 6 is the structural representation after Fig. 5 of the present invention applies resist layer and photoresist layer;
Fig. 7 is the structural representation after Fig. 6 photoetching of the present invention;
Fig. 8 is a T-shape grid structural representation of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is done and to describe in further detail:
As shown in Figure 1, substrate 1 adopts general cleaning method, makes substrate 1 clean, does not have and stains, and dry the moisture on substrate 1 surface in 150 degrees centigrade to 180 degrees centigrade clean environment.
As shown in Figure 2, be coated with the chemically-amplified resist 2 that is applied to 248 nano wave length photoetching on substrate, photoresist 2 resolution are more than 0.2 micron, the about 3000-5000 dust of thickness, adopt the UV135 photoresist, under 90 degrees centigrade-130 degrees centigrade temperature, toasted 60 seconds-90 seconds.
As shown in Figure 3, adopt deep ultraviolet (wavelength 248nm) exposure machine to carry out contraposition alignment, exposure, and according to the resolution performance of litho machine and the required suitable reticle of the long selection of grid, adopt tetramethyl aqua ammonia (TMAH) solution of concentration 2.38% to develop about 60 seconds, the photoresist graph window that begins to take shape the grid root as shown in Figure 4.
As shown in Figure 5, adopt the RELACS of Clariant company
TMMaterial is to the photoresist graph window of the grid root left such as Fig. 4 thin processing of contracting; With RELACS
TMMaterial with spin coated on the spin coater on grid chromosome shape, under 90 degrees centigrade-130 degree celsius temperature, toast after coating is finished and produce crosslinked action, through dissolution, crosslinked part forms undissolvable thin film, thereby further reduces grid long (grid length can be dwindled 0.1 micron at least).
As shown in Figure 6, coating electron beam resist PMMA glue 8, thickness is by the thickness requirement decision of grid metal, baking is 20-30 minute under temperature 130-200 degree centigrade environment, is coated with the chemically-amplified resist 5 that is applied to 248 nano wave length photoetching again, and resolution is more than 0.15 micron, thickness 3000-5000 dust, preceding baking condition is determined according to the type of photoresist, adopts UV135, and baking is 60 seconds-90 seconds under the environment of 90 degrees centigrade-130 degrees centigrade of temperature.
As shown in Figure 7, adopt deep ultraviolet (wavelength 248nm) exposure machine to carry out contraposition alignment, exposure, adopt the tetramethyl Dilute Ammonia Solution of concentration 2.38% to develop 60 seconds, adopt the deep ultraviolet light source large area exposure of wavelength 220 nanometers-248 nanometer; Toluene develops, and removes remaining counterdie with oxygen plasma again, forms the photoresist profile such as the figure 7 of T-shape grid.
Adopt the metal of the method deposit gate electrode of evaporation of metal, adopt general lift-off technology to carry out metal-stripping, and remove residual photoresist and obtain as shown in Figure 8 T-shape grid 7.
Claims (3)
1. the method for a deep-UV lithography making T type gate, it is characterized in that: this method comprises following step:
Step 1, clean substrate and carry out drying,
Step 2, on dried substrate coating deep ultraviolet chemically-amplified resist,
Step 3, employing deep ultraviolet exposure machine carry out contraposition alignment, exposure, development, begin to take shape the photoresist graph window of grid root,
Step 4, adopt the chemistry thin solution that contracts, the photoresist graph window that exposure imaging is left thin processing of contracting,
Step 5, coating photoresist electron sensitive resist,
Step 6, coating deep ultraviolet chemically-amplified resist,
Step 7, employing deep ultraviolet exposure machine carry out contraposition alignment, exposure, development, make window on chemically-amplified resist by lithography,
Step 8, employing deep UV (ultraviolet light) are exposed to electron sensitive resist, and develop, and form the photoresist graph window of grid cover,
The metal of the method deposit gate electrode of step 9, employing evaporation of metal,
Step 10, stripping metal, remove photoresist, finish the making of T-shape grid.
2. the method for deep-UV lithography making T type gate according to claim 1 is characterized in that described deep ultraviolet light-sensitive lacquer is the chemically-amplified resist that is used for the deep-UV lithography of 248nm wavelength.
3. the method for deep-UV lithography making T type gate according to claim 1 is characterized in that the described thin solution that contracts is the RELACS of the Clariant company of employing
TMMaterial.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100547376A CN101251713B (en) | 2008-04-07 | 2008-04-07 | Method for deep-UV lithography making T type gate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100547376A CN101251713B (en) | 2008-04-07 | 2008-04-07 | Method for deep-UV lithography making T type gate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101251713A true CN101251713A (en) | 2008-08-27 |
| CN101251713B CN101251713B (en) | 2010-11-10 |
Family
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| Application Number | Title | Priority Date | Filing Date |
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| CN2008100547376A Expired - Fee Related CN101251713B (en) | 2008-04-07 | 2008-04-07 | Method for deep-UV lithography making T type gate |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102738698A (en) * | 2012-06-27 | 2012-10-17 | 浙江大学 | Production method of deep submicron etched groove based on ultraviolet lithography process |
| CN104037214A (en) * | 2014-06-26 | 2014-09-10 | 中国电子科技集团公司第十三研究所 | Grid-control semiconductor device for improving short channel effect |
| CN104701154A (en) * | 2015-03-11 | 2015-06-10 | 北京工业大学 | Preparation method for sub-half-micron T-shaped gate via chemical shrinkage method |
| CN104900503A (en) * | 2015-04-28 | 2015-09-09 | 厦门市三安集成电路有限公司 | Fabrication method of T type gate of high-ion mobility transistor |
| CN105511233A (en) * | 2015-12-28 | 2016-04-20 | 中国电子科技集团公司第十三研究所 | Method for preparing T-shaped gate by two times of electron beam exposure |
| CN108807162A (en) * | 2018-05-28 | 2018-11-13 | 苏州汉骅半导体有限公司 | T-type grid preparation method |
| CN110429027A (en) * | 2019-06-27 | 2019-11-08 | 福建省福联集成电路有限公司 | A kind of method and device improving low line width gated device production efficiency |
| CN110534421A (en) * | 2019-08-26 | 2019-12-03 | 深圳市汇芯通信技术有限公司 | Grid production method and Related product |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100218670B1 (en) * | 1996-12-04 | 1999-09-01 | 정선종 | Method of forming gate of semiconductor device |
| CN1110065C (en) * | 2000-04-05 | 2003-05-28 | 信息产业部电子第十三研究所 | Method for automatically aligning grid cap to grid foot of T-shaped grid of smeicondctor device |
| CN1158570C (en) * | 2001-09-13 | 2004-07-21 | 信息产业部电子第十三研究所 | Phase shifting mask etching process of producing T-shaped grid through one photo-etching step |
| JP4198418B2 (en) * | 2002-08-14 | 2008-12-17 | 富士通株式会社 | Manufacturing method of fine T-shaped electrode |
| EP1560260A1 (en) * | 2004-01-29 | 2005-08-03 | Rohm and Haas Electronic Materials, L.L.C. | T-gate formation |
-
2008
- 2008-04-07 CN CN2008100547376A patent/CN101251713B/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102738698A (en) * | 2012-06-27 | 2012-10-17 | 浙江大学 | Production method of deep submicron etched groove based on ultraviolet lithography process |
| CN104037214A (en) * | 2014-06-26 | 2014-09-10 | 中国电子科技集团公司第十三研究所 | Grid-control semiconductor device for improving short channel effect |
| CN104701154A (en) * | 2015-03-11 | 2015-06-10 | 北京工业大学 | Preparation method for sub-half-micron T-shaped gate via chemical shrinkage method |
| CN104900503A (en) * | 2015-04-28 | 2015-09-09 | 厦门市三安集成电路有限公司 | Fabrication method of T type gate of high-ion mobility transistor |
| CN104900503B (en) * | 2015-04-28 | 2018-05-01 | 厦门市三安集成电路有限公司 | A kind of production method of the T-shaped grid of high ionic mobility transistor |
| CN105511233A (en) * | 2015-12-28 | 2016-04-20 | 中国电子科技集团公司第十三研究所 | Method for preparing T-shaped gate by two times of electron beam exposure |
| CN108807162A (en) * | 2018-05-28 | 2018-11-13 | 苏州汉骅半导体有限公司 | T-type grid preparation method |
| CN110429027A (en) * | 2019-06-27 | 2019-11-08 | 福建省福联集成电路有限公司 | A kind of method and device improving low line width gated device production efficiency |
| CN110534421A (en) * | 2019-08-26 | 2019-12-03 | 深圳市汇芯通信技术有限公司 | Grid production method and Related product |
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| Publication number | Publication date |
|---|---|
| CN101251713B (en) | 2010-11-10 |
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