CN1158570C - Phase shifting mask etching process of producing T-shaped grid through one photo-etching step - Google Patents
Phase shifting mask etching process of producing T-shaped grid through one photo-etching step Download PDFInfo
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- CN1158570C CN1158570C CNB011421177A CN01142117A CN1158570C CN 1158570 C CN1158570 C CN 1158570C CN B011421177 A CNB011421177 A CN B011421177A CN 01142117 A CN01142117 A CN 01142117A CN 1158570 C CN1158570 C CN 1158570C
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- shape grid
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- photoetching
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Abstract
The present invention discloses a phase shifting mask photoetching method for producing a T-shaped grid through one photoetching step, which relates to a microphotoetching method in semiconductor devices and adopts a pattern dimension with a computer towards the phase shifting mask to carry out photoetching technique simulation and optimal design. A T-shaped grid photoresist profile structure is produced by only using a T-shaped grid phase shifting mask which is composed of three transparent windows of which the optical phase differences are 180 DEG between each other, single layer positive photoresist, one time exposure and development. The method can greatly simplify the manufacture techniques of the T-shaped grid, and therefore, the method has the characteristics of simple manufacture technique, short cycle, high production efficiency, low cost, favorable performance, etc., and the method is particularly suitable for producing and manufacturing various submicron and deep submicron magnitude compound semiconductors and IC devices.
Description
Technical field
The present invention relates to produce with a photoetching in the field of manufacturing semiconductor devices micro-lithography method of the phase shift mask photoetching of T shape grid, be specially adapted to the manufacturing of the T shape grid of devices such as various kinds of compound semiconductors device and integrated circuit.
Background technology
The method of manufacturing T shape grid has weakness separately at present.For example,, need to use 2～3 layer photoetching glue and different proportion dose exposure,, can produce T shape grid photoresist structure, complex process through 1～2 development with the method for beamwriter lithography.The efficient of electron beam exposure is very low, the incompatibility production requirement; Second kind of photoetching method (BIM+DDM technology) that uses version to go up the binary chrome mask of on-the-spot oblique illumination, owing to do not use Phase-Shift Masking Technique, the light distribution that exposure produces is not precipitous, cause T shape grid section steep inadequately, head (hereinafter to be referred as the Gh) broad of T-shape grid is unfavorable to short channel device and IC manufacturing simultaneously.Simultaneously, owing to need to make in addition a specific transmission phase grating, increased processed complex, the also corresponding increase of cost; The third is a Twi-lithography method of utilizing Phase-Shift Masking Technique (PEL technology commonly used), photoetching for the first time forms the foot (hereinafter to be referred as Gf) of T shape grid with PEL mask and negative adhesive process, be coated with second layer positive photoresist more thereon, through exposure of second layer mask alignment and second development, form Gh, promptly need to use two layer masks, be coated with (two kinds) photoresist twice, through double exposure, development, could produce the required photoresist profile structure of T shape grid.Its complex process, the cycle is long, must cause various defective workmanships to increase the also corresponding increase of cost.
Summary of the invention
Technical matters to be solved by this invention is the T shape grid phase shift mask (being called for short the M-PEL mask) that 180 ° transparent window constitutes with one by three optics phasic differences only with regard to providing a kind of, only need the individual layer positive photoresist, only use single exposure, development, can produce the photoetching method of T shape grid photoresist profile structure, and the inventive method also to have manufacturing process simple, with short production cycle, the production efficiency height, performance is good, and cost is low, is convenient to characteristics such as large-scale production application.
Technical matters to be solved by this invention is realized by following technical proposal, the step that it comprises:
A. with computing machine dimension of picture, the photoetching process of T shape grid phase shift mask are carried out processing simulation and optimal design: the optical source wavelength of projection mask aligner, numerical aperture, coherence factor, each parameter input computing machine of out of focus value, cell placement input computing machine with T shape gate figure window size and phase shift mask domain, start computer simulator, select exposure, developer level, obtain meeting one dimension light distribution, the two and three dimensions photoresist developing section distributed architecture of T shape grid requirement.
B. make T shape grid phase shift mask: the T shape grid mask size that fits optimal design according to computer mould; Make quartzy 15 chromium, 17 masks 1, glass 16 chromium 17 masks 2 at pattern generator; Be manufactured with two bright wisp graphical windows 6 that form each T shape grid unit figure on the quartz chrome mask version 1; Be manufactured with the alignment optical transmission window 8 that the chromium layer is sheltered on the glass chrome mask version 2; Be the depth value that h deducts chemical polishing with dry process reaction ion etching machine with the value that quartz 15 substrate surfaces of 1 two bright wisp graphical windows 6 of quartz chrome mask version etch into the degree of depth 5
Wherein the h value should satisfy following formula:
h＝Kλ/2(n-1)
In the formula: K is an odd number, and λ is the optical source wavelength of used projection mask aligner, and n is the refractive index of mask substrate material at optical source wavelength λ place;
Quartz 15 substrate surfaces that are etched with the wet chemistry polishing, after dry etching and the chemical polishing, quartz substrate is etched into the h value that the optics phasic difference is 180 ° the degree of depth 5, obtain quartz chrome mask version 3, resist coating on quartz chrome mask version 3, make the alignment mask with glass chrome mask version 2, remove the chromium layer 7 of center on the quartz chrome mask version 3, obtain by the optics phasic difference T shape grid phase shift mask version 4 that constitutes of three optical transmission windows 9,11,10 of 180 ° each other with optical transmission window 8 alignments.
C. make the photoresist structure of semiconductor T shape grid: in projection mask aligner, use T shape grid phase shift mask version 4, the semiconductor wafer that scribbles individual layer positive photoresist 19 is carried out photoetching, obtain semiconductor T shape grid photoresist profile structure 18.
Be manufactured with the optical transmission window 9,11,10 of three 180 ° of optics phasic differences each other on the inventive method T shape grid phase shift mask version 4, Chrome-free figure between three optical transmission windows 9,11,10, with phase limit, 180 ° of optics positions is window edge, between chromium layer 17 and the optical transmission window 9,10 that is adjacent 180 ° of optics phasic differences is arranged.
The present invention compares background technology and has following advantage:
1. the present invention only uses a phase shift mask, only needs the individual layer positive photoresist, only just can produce the photoresist profile structure of T shape grid with a photoetching, and can be used for the good semiconductor T shape grid of manufacturing property, therefore manufacturing process is simple, with short production cycle, the production efficiency height.
2. the M-PEL mask elementary cell of manufacturing of the present invention is that transparent window 9,11,10 by three 180 ° of optics phasic differences each other constitutes; its periphery is chromium floor 17 resistance light district; when this M-PEL mask during at projecting etching imaging; can produce precipitous and have the light distribution of specific form, in order to the good semiconductor T shape grid photoresist profile structure of obtained performance.
3. the present invention can make the M-PEL mask with ordinary semiconductor manufacturing process equipment and process materials, so cost is low, is convenient to large-scale production and uses, and is specially adapted to the compound semiconductor of sub-micron, deep-submicron magnitude and the manufacturing of integrated circuit (IC)-components.
Description of drawings
Fig. 1 is a M-PEL mask arrangement synoptic diagram of the present invention.
Fig. 2 is the semiconductor T shape grid 3-D solid structure synoptic diagram after photoresist 19 of the present invention develops.
Embodiment
With reference to Fig. 1, Fig. 2, the phase shift mask photoetching method step that the present invention produces T shape grid is as follows, at first dimension of picture, the photoetching process of T shape grid phase shift mask are carried out processing simulation and optimal design with computing machine, the full photoetching process simulation softward " COMPARE " that is provided by microstructure study center doctor Cui Zheng of Britain rutherford National Laboratory is provided embodiment, carries out the optimal design of photoetching process simulation and M-PEL mask.The optical parametric of used projection mask aligner: wavelength (λ), numerical aperture (NA), coherence factor (σ), out of focus value (DOF) input computing machine, the optical parametric of the used litho machine of embodiment is λ=436nm, NA=0.28, σ=0.7, DOF=0, photoresist is AZ1350J, thickness
With above-listed each parameter input computing machine, simultaneously the cell placement of T shape gate figure window size and phase shift mask domain is imported computing machine, start computer simulator COMPARE software, select exposure, developer level, obtain meeting one dimension light distribution, the two and three dimensions photoresist developing section distributed architecture of T shape grid requirement.Result and device T shape grid physical dimension as gained require to have to depart from, and can revise design repeatedly, till obtaining optimum.
T shape grid M-PEL mask manufacture method of the present invention is as follows: fit the resulting T shape of optimal design grid mask graph size according to computer mould, on pattern generator, make quartzy 15 chromium, 17 mask plates 1, glass 16 chromium 17 masks 2, be manufactured with two bright wisp graphical windows 6 forming each T shape grid unit figure on the quartz chrome mask version 1, be manufactured with on the glass chrome mask version 2 that the chromium layer shelters alignment with optical transmission window 8, embodiment quartz chrome mask version 1 is made into by two at a distance of 800nm, the quartzy chromium plate that width is respectively formed for the parallel abatjour mouth 6 of 560nm (all referring to be converted to the size numerical value on the semiconductor wafer), quartz chrome mask version 1 is sheltered down with being dry-etched in the ME-3A type magnetic intensified response ion etching machine, with carbon tetrafluoride gas/oxygen (CF at its resistance light district chromium floor
4/ O
2) quartz 15 substrate surfaces of 1 two bright wisp graphical windows 6 of etching quartz mask plate etch into the depth value that the degree of depth 5 values deduct chemical polishing, with wet chemistry polishing quartzy 15 substrates that are etched, after dry etching and the chemical polishing, it is 180 ° the degree of depth 5 that quartzy 15 substrates are etched into the optics phasic difference, the quartz 15 substrate degree of depth 5 that obtain bright wisp window 6 on the quartz chrome mask version 3 are h, and then the h value should satisfy following formula:
h＝Kλ/2(n-1) (1)
In the formula (1): K is an odd number, and λ is the optical source wavelength of used projection mask aligner, and n is the refractive index of mask substrate material at optical source wavelength λ place.
Implement: routine h=4666 * K, K=1, then h=4666 .On ME-3A type dry etching machine, use CF
4/ O
2(25/2.5sccm) the etching width is the quartz substrate 21 minutes of two parallel abatjour mouths 6 of 560nm, through clean, drying, can reach the certain depth of quartz substrate etching.The purpose of wet chemistry polishing be eliminate since surperficial little roughening that dry etching causes to the scattering of light effect, make the transmittance of the adjacent part of 180 ° of phasic differences try one's best consistent, can produce maximum destructive interference, the polishing of embodiment wet chemistry is to adopt the fully SiO of buffering
2Corrosive liquid, for example ammonium fluoride 45.4 grams add (40%) 18 milliliter in hydrofluorite, add 65.4 milliliters of deionized waters, and the time of chemical polishing was selected between 40 to 60 seconds, and the vague generalization optical polishing time is 50 seconds.The h value that can reach quartzy 15 substrate surface etching total depths 5 like this after dry etching and the chemical polishing is 4666 .
The present invention is as follows to the photoetching method that quartz chrome mask version 3 alignments dechromise: quartz chrome mask version 3 is coated with last layer AZ1350 type positive photoresist, and thickness is 6000 , preceding baking 90 ℃, 25 minutes.Make the alignment mask with glass chrome mask version 2, the chromium layer 7 with center on the optical transmission window 8 alignment quartz chrome masks 3 carries out photolithographic exposure, through 0.25N, TMAH/H
2O developed 60 seconds, and corrode with the ammonium ceric nitrate acid etching solution, can remove the chromium layer 7 of center on the quartz chrome mask version 3, through remove photoresist, clean, after the drying, make finally promptly that the present invention uses by the optics phasic difference T shape grid phase shift mask version 4 that constitutes of three optical transmission windows 9,11,10 of 180 ° each other.
When the embodiment of the invention is made semiconductor T shape grid photoresist structure with M-PEL mask 4, M-PEL mask 4 is placed on the GCA3696 final reaction system, the semiconductor wafer that scribbles AZ1350J type positive photoresist 19 is carried out photoetching, embodiment resist coating thickness is 10650A, and exposure is after 0.25N, TMAH/H
2O developed 60 seconds, after cleaning, the drying, can obtain the three-dimensional photoetching glue cross-section structure shown in 18 figures among Fig. 2 of the T shape grid manufacturing usefulness of the long Lg=0.50 μ m of being of grid.In order to prevent the harmful effect of optical proximity effect to sub-half-micron, deep-submicron magnitude T shape grid lithographic results, when the M-PEL mask design is made, should carry out optical near-correction, the present invention uses the method add auxiliary pattern in the root and the end of grizzly bar figure, can prevent effectively that the grizzly bar root from narrowing down and problem such as end shortening.The shape and size of auxiliary pattern, position etc. are determined by the photoetching process simulation.
Be manufactured with the optical transmission window 9,11,10 of three 180 ° of optics phasic differences each other on the T shape grid phase shift mask version 4 of the present invention, Chrome-free figure between three optical transmission windows 9,11,10, with phase limit, 180 ° of optics positions is window edge, between chromium layer 17 and the optical transmission window 9,10 that is adjacent 180 ° of optics phasic differences is arranged.
Embodiment phase shift mask version 4 is under the illumination of projection mask aligner's light source, and when owing to light optical transmission window 9,11,10 being shone, optical path difference is by the degree of depth 5 decisions between them, and the degree of depth 5 satisfies formula (1)
During requirement, promptly produce 180 ° of optics phasic differences, optical transmission window 9,10 and optical transmission window 11 and and chromium layer 17 between 180 ° of optics phasic differences are all arranged, as long as through three optical transmission windows 9,11,10 with suitable dimension ratio of computer art simulation of the present invention and optimal design, can photoetching produce the needed photoresist profile structure 18 of T shape grid.
Claims (2)
1. one kind produces the phase shift mask photoetching method of T shape grid with a photoetching, it is characterized in that comprising step:
A. with computing machine dimension of picture, the photoetching process of T shape grid phase shift mask are carried out processing simulation and optimal design: the optical source wavelength of projection mask aligner, numerical aperture, coherence factor, each parameter input computing machine of out of focus value, with the graphical window size of T shape grid phase shift mask and the cell placement input computing machine of phase shift mask domain, start computer simulator, select exposure, developer level, obtain meeting one dimension light distribution, the two and three dimensions photoresist developing section distributed architecture of T shape grid requirement;
B. make T shape grid phase shift mask: the T shape grid mask size that fits optimal design according to computer mould, on pattern generator, make quartzy (15) chromium (17) mask (1), glass (16) chromium (17) mask (2), be manufactured with two bright wisp graphical windows (6) of forming each T shape grid unit figure on the quartz chrome mask version (1), be manufactured with the alignment optical transmission window (8) that the chromium layer is sheltered on the glass chrome mask version (2), is the depth value that h deducts chemical polishing with dry process reaction ion etching machine with the value that quartz (15) substrate surface of (1) two bright wisp graphical window of quartz chrome mask version (6) etches into the degree of depth (5), and wherein the h value should satisfy following formula:
h＝Kλ/2(n-1)
In the formula: K is an odd number, and λ is the optical source wavelength of used projection mask aligner, and n is the refractive index of mask substrate material at optical source wavelength λ place;
Quartz (15) substrate surface that is etched with the wet chemistry polishing, after dry etching and the chemical polishing, quartzy (15) substrate is etched into the h value that the optics phasic difference is 180 ° the degree of depth (5), obtain quartz chrome mask version (3), go up resist coating in quartz chrome mask version (3), make the alignment mask with glass chrome mask version (2), remove the chromium layer (7) that quartz chrome mask version (3) goes up the center with optical transmission window (8) alignment, obtain by the optics phasic difference T shape grid phase shift mask versions (4) that constitute of 180 ° three optical transmission windows (9), (11), (10) each other;
C. make the photoresist structure of semiconductor T shape grid: in projection mask aligner, use T shape grid phase shift mask versions (4), the semiconductor wafer that scribbles individual layer positive photoresist (19) is carried out photoetching, obtain semiconductor T shape grid photoresist profile structures (18).
2. a photoetching of usefulness according to claim 1 produces the phase shift mask photoetching method of T shape grid, it is characterized in that being manufactured with on the T shape grid phase shift mask versions (4) three optical transmission window of 180 ° of optics phasic differences (9), (11), (10) each other, Chrome-free figure between three optical transmission windows (9), (11), (10), with phase limit, 180 ° of optics positions is window edge, between chromium layer (17) and the optical transmission window (9) that is adjacent, (10) 180 ° of optics phasic differences is arranged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011421177A CN1158570C (en) | 2001-09-13 | 2001-09-13 | Phase shifting mask etching process of producing T-shaped grid through one photo-etching step |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011421177A CN1158570C (en) | 2001-09-13 | 2001-09-13 | Phase shifting mask etching process of producing T-shaped grid through one photo-etching step |
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| Publication Number | Publication Date |
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| CN1337600A CN1337600A (en) | 2002-02-27 |
| CN1158570C true CN1158570C (en) | 2004-07-21 |
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| CNB011421177A Expired - Fee Related CN1158570C (en) | 2001-09-13 | 2001-09-13 | Phase shifting mask etching process of producing T-shaped grid through one photo-etching step |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1769073B (en) * | 2004-10-27 | 2010-05-05 | 中国科学院光电技术研究所 | Laser direct writing anti-counterfeit label |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100362628C (en) * | 2003-09-28 | 2008-01-16 | 中芯国际集成电路制造(上海)有限公司 | Self-aligning method for outskirt state phase shifting light shade |
| US7829471B2 (en) * | 2005-07-29 | 2010-11-09 | Applied Materials, Inc. | Cluster tool and method for process integration in manufacturing of a photomask |
| CN101251713B (en) * | 2008-04-07 | 2010-11-10 | 中国电子科技集团公司第十三研究所 | Method for deep-UV lithography making T type gate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1769073B (en) * | 2004-10-27 | 2010-05-05 | 中国科学院光电技术研究所 | Laser direct writing anti-counterfeit label |
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