CN103985784A - Polishing and chamfering method for semiconductor chip - Google Patents
Polishing and chamfering method for semiconductor chip Download PDFInfo
- Publication number
- CN103985784A CN103985784A CN201410157983.XA CN201410157983A CN103985784A CN 103985784 A CN103985784 A CN 103985784A CN 201410157983 A CN201410157983 A CN 201410157983A CN 103985784 A CN103985784 A CN 103985784A
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- CN
- China
- Prior art keywords
- polishing
- semiconductor wafer
- semiconductor chip
- chamfering
- present
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a polishing and chamfering method for a semiconductor chip. The polishing and chamfering method for the semiconductor chip comprises the steps that (A) the front face of the semiconductor chip is coated with photoresist; (B) the semiconductor chip coated with the phptoresist is bonded to a chamfering device; (C) the chamfering device bonded with the semiconductor chip is put on a polishing disc to carry out polishing and chamfering. According to the polishing and chamfering method for the semiconductor chip, the junction of the front face and the side face of the semiconductor chip is polished into a certain radian surface, the edge of the semiconductor chip is made to be bright and smooth, and the phenomena of slag falling and edge breakage can be avoided. Thus, cost for producing an infrared focal plane detector device is lowered, and the performance and the stability of the infrared focal plane detector device are improved.
Description
Technical field
The present invention relates to Infrared Focal Plane Detection Technology field, relate in particular to a kind of polishing chamfering method of semiconductor wafer.
Background technology
Along with infrared focal plane detector is applied in military civilian every field more and more widely, also more and more urgent to the demand of infrared focal plane detector device.And production cost is low, performance is high, the demand of the infrared focal plane detector device of good stability is increasing, but current infrared focal plane detector semiconductor die sheet material used is after scribing, and Waffer edge place is easy to collapse limit and falls slag.
Summary of the invention
In view of above-mentioned analysis, the present invention aims to provide a kind of polishing chamfering method of semiconductor wafer, and in order to solve the semiconductor die sheet material used of infrared focal plane detector in prior art after scribing, Waffer edge place is easy to collapse the problem that slag is fallen on limit.
The present invention is mainly achieved through the following technical solutions:
A polishing chamfering method for semiconductor wafer, comprising:
Steps A: by the front surface coated photoresist of semiconductor wafer;
Step B: the described semiconductor wafer applying after photoresist is bonded on chamfering device;
Step C: the described chamfering device that glues semiconductor wafer is put into polishing chamfering on polishing disk, makes the front of described semiconductor wafer and the junction of side form the fillet surface of predetermined arc.
Preferably, the height that surpasses the indium post on described semiconductor wafer front at the thickness of described semiconductor wafer front surface coated photoresist.
Preferably, described thickness is 20-100 micron.
Preferably, the predetermined arc of described fillet surface is 45-75 degree.
The polishing chamfering method of a kind of semiconductor wafer provided by the invention, according to the present invention, the intersection of the front of semiconductor wafer and side is finished to certain radian face, semiconductor wafer after the method is processed, realized edge of semiconductor wafer light, round and smooth, without falling slag, collapsing limit phenomenon.Thereby reaching reduction produces the cost of infrared focal plane detector device, improves its performance and stability.
Other features and advantages of the present invention will be set forth in the following description, and the becoming apparent from specification of part, or understand by implementing the present invention.Object of the present invention and other advantages can be realized and be obtained by specifically noted structure in the specification write, claims and accompanying drawing.
Accompanying drawing explanation
Fig. 1 is the structural representation that the chamfering of the embodiment of the present invention coordinates;
Fig. 2 is the structural representation of the semiconductor wafer that obtains after the embodiment of the present invention is processed.
Fig. 3 is the chamfering device of the embodiment of the present invention and the end view of bonding wafer;
Fig. 4 is the chamfering device of the embodiment of the present invention and the vertical view of bonding wafer.
Embodiment
Below in conjunction with accompanying drawing, specifically describe the preferred embodiments of the present invention, wherein, accompanying drawing forms the application's part, and together with embodiments of the present invention for explaining principle of the present invention.For purpose of clarity and simplification, when it may make theme of the present invention smudgy, by illustrating in detail of known function and structure in omission device described herein.
The embodiment of the present invention has designed a kind of polishing chamfering method of semiconductor wafer, comprising:
Steps A: by the front surface coated photoresist 1 of semiconductor wafer 2;
In the embodiment of the present invention, at the thickness of described semiconductor wafer front surface coated photoresist, surpass the height of the indium post on described semiconductor wafer front.
By the front surface coated photoresist at semiconductor wafer, thereby effectively protect the indium post of wafer surface not damage in polishing process, also effectively avoided the impurity in polishing to drop on indium post.
The thickness of the semiconductor wafer front surface coated photoresist of the embodiment of the present invention is 20-100 micron.Aim is the height certain limit that surpasses indium post.
Step B: the described semiconductor wafer applying after photoresist is bonded on chamfering device 3, specifically referring to Fig. 3 and Fig. 4.
Be specially, the back side that applies the described semiconductor wafer after photoresist is bonded on chamfering device, by chamfering device, reach the angle of required chamfering, referring to Fig. 2.
The predetermined arc of the described fillet surface of the embodiment of the present invention is 45-75 degree.The present invention is arranged on the side near the side of semiconductor crystal face by burnishing surface, to protect as much as possible positive indium post injury-free.
Step C: the described chamfering device that glues semiconductor wafer is put into polishing chamfering on polishing disk 4, makes the front of described semiconductor wafer and the junction of side form the fillet surface of predetermined arc.Fillet surface is bright, round and smooth, without falling slag, collapse the phenomenon on limit, specifically referring to Fig. 1.
On polishing disk, polishing can obtain light, round and smooth chamfer surface.Thereby reach the object that reduction is produced the cost of infrared focal plane detector device, improved its performance and stability.
The polishing chamfering method of a kind of semiconductor wafer provided by the invention, according to the present invention, the intersection of the front of semiconductor wafer and side is finished to certain radian face, semiconductor wafer after the method is processed, realized edge of semiconductor wafer light, round and smooth, without falling slag, collapsing limit phenomenon.Thereby reaching reduction produces the cost of infrared focal plane detector device, improves its performance and stability.
The above; be only the present invention's embodiment preferably, but protection scope of the present invention is not limited to this, is anyly familiar with in technical scope that those skilled in the art disclose in the present invention; the variation that can expect easily or replacement, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (4)
1. a polishing chamfering method for semiconductor wafer, is characterized in that, comprising:
Steps A: by the front surface coated photoresist of semiconductor wafer;
Step B: the described semiconductor wafer applying after photoresist is bonded on chamfering device;
Step C: the described chamfering device that glues semiconductor wafer is put into polishing chamfering on polishing disk, makes the front of described semiconductor wafer and the junction of side form the fillet surface of predetermined arc.
2. method according to claim 1, is characterized in that, surpasses the height of the indium post on described semiconductor wafer front at the thickness of described semiconductor wafer front surface coated photoresist.
3. method according to claim 2, is characterized in that, described thickness is 20-100 micron.
4. according to the method described in claim 1-3 any one, it is characterized in that, the predetermined arc of described fillet surface is 45-75 degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410157983.XA CN103985784A (en) | 2014-04-18 | 2014-04-18 | Polishing and chamfering method for semiconductor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410157983.XA CN103985784A (en) | 2014-04-18 | 2014-04-18 | Polishing and chamfering method for semiconductor chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103985784A true CN103985784A (en) | 2014-08-13 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410157983.XA Pending CN103985784A (en) | 2014-04-18 | 2014-04-18 | Polishing and chamfering method for semiconductor chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103985784A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102172857A (en) * | 2010-12-28 | 2011-09-07 | 中国电子科技集团公司第十一研究所 | Method for grinding indium antimonide wafer |
| CN103000766A (en) * | 2012-12-10 | 2013-03-27 | 中国电子科技集团公司第十一研究所 | Method for scribing bonding of infrared focal plane detector indium bump |
-
2014
- 2014-04-18 CN CN201410157983.XA patent/CN103985784A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102172857A (en) * | 2010-12-28 | 2011-09-07 | 中国电子科技集团公司第十一研究所 | Method for grinding indium antimonide wafer |
| CN103000766A (en) * | 2012-12-10 | 2013-03-27 | 中国电子科技集团公司第十一研究所 | Method for scribing bonding of infrared focal plane detector indium bump |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140813 |
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| RJ01 | Rejection of invention patent application after publication |