CN107068783B - A kind of indium antimonide terahertz detector and production method - Google Patents
A kind of indium antimonide terahertz detector and production method Download PDFInfo
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- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 19
- 229920005989 resin Polymers 0.000 claims abstract description 16
- 239000011347 resin Substances 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 8
- 239000004519 grease Substances 0.000 claims abstract description 7
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 3
- 230000005684 electric field Effects 0.000 claims abstract description 3
- 238000005498 polishing Methods 0.000 claims abstract description 3
- 239000003822 epoxy resin Substances 0.000 claims description 10
- 229920000647 polyepoxide Polymers 0.000 claims description 10
- 239000003292 glue Substances 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 9
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 239000004575 stone Substances 0.000 claims description 4
- 238000000407 epitaxy Methods 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 241000218202 Coptis Species 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims 1
- 238000001259 photo etching Methods 0.000 abstract description 8
- 230000004044 response Effects 0.000 abstract description 8
- 239000000203 mixture Substances 0.000 abstract description 7
- 238000011896 sensitive detection Methods 0.000 abstract description 4
- 229920006335 epoxy glue Polymers 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 41
- 238000001514 detection method Methods 0.000 description 11
- 239000010931 gold Substances 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 244000247747 Coptis groenlandica Species 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- OANVFVBYPNXRLD-UHFFFAOYSA-M propyromazine bromide Chemical compound [Br-].C12=CC=CC=C2SC2=CC=CC=C2N1C(=O)C(C)[N+]1(C)CCCC1 OANVFVBYPNXRLD-UHFFFAOYSA-M 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 206010003084 Areflexia Diseases 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
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- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
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- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ion Chemical class 0.000 description 1
- 239000010426 asphalt Substances 0.000 description 1
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- UCHOFYCGAZVYGZ-UHFFFAOYSA-N gold lead Chemical compound [Au].[Pb] UCHOFYCGAZVYGZ-UHFFFAOYSA-N 0.000 description 1
- 230000002631 hypothermal effect Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of indium antimonide terahertz detector and production method, the gold-plated dielectric layer of indium antimonide detector and the back side which is bonded by High Resistivity Si mirror central lower, switching sheet metal and device the tube socket composition of two side bonds of substrate.Production method includes：It is bonded single-sided polishing indium antimonide materials in alumina substrate, indium antimonide thin layer is thinned to obtain；Using CVD method SiO is grown in thin layer surfacexPassivating film；Sensitive member is made by etching technics, device is adhered to silicon mirror center by the gold-plated making coupled antenna of photoetching using epoxy glue；The gold-plated dielectric layer in the back side is set on device, enhances electric field strength at sensitive member；It realizes that switching sheet metal and device pin are electrically connected using conductive silicone grease, mechanical support of the tube socket to silicon mirror and device is realized using resin sheet.The terahertz detector made according to the method is compact-sized, and response range can cover 0.04 2.5THz, and the highly sensitive detection to THz wave can be realized under room temperature and appropriate cryogenic conditions.
Description
Technical field
The present invention relates to a kind of production methods of terahertz detector, are lured based on electromagnetic wave more specifically, being related to one kind
The production method for leading the indium antimonide terahertz detector of potential well effect.
Background technology
Terahertz (Terahertz/THz) wave refers to electromagnetism of the frequency in 0.1-10THz (30-3000 μm of wavelength) range
Wave has the characteristics such as low energy, coherence, broadband property and penetrability.Because of these peculiar properties, THz wave is in communication, day
The fields such as text, medical imaging, non-destructive testing and security have a wide range of applications potentiality, in recent years have become and to study both at home and abroad
Hot spot [1-3].One of the important research content of Terahertz Technology development is terahertz detection technology, development effort high sensitivity,
Terahertz detector easy to use, of reasonable cost, will be in biomedical and chemistry, environmental monitoring, astronomy and remote sensing, communication
The fields such as technology, safety inspection play huge effectiveness, have great application value [4-6].
Indium antimonide materials are a kind of typical low-gap semiconductor materials, and nearly recent decades people have carried out such material and answered
Research work for terahertz detection.Using the thermoelectronic effect of InSb materials at low temperature, people have made liquid helium refrigeration
InSb thermoelectron Bolometer, operating temperature be less than 4.2K, response wave band f<1.5THz, NEP are better than 10-13W/Hz0.5
[7].The liquid helium refrigeration mode terahertz detector of InSb based on thermoelectronic effect has commercial model, however these devices will
It works under liquid helium temperature or lower temperature, is not easy practical extensive use.Since 2013, seminar where applicant develops
Metal-semiconductor-metal (MSM) structure novel high sensitivity room temperature terahertz detector [8-10] based on mercury cadmium telluride,
And a kind of novel explanation is proposed in theory.Sizov et al. (2015) experimentally also reports MSM structure mercury cadmium telluride devices
Old plant [11] of the part to 0.14THz signals.Seminar observes mercury cadmium telluride material by building suitable MSM structures
Expect the room temperature photoconduction phenomenon of (MCT) to THz wave, and potential well (EIW) trapped carrier is induced based on terahertz electromagnetic radiation
Physical model to detection mechanism be explained.Novel terahertz detector based on mercury cadmium telluride realizes preferable property
Can, likewise, three-five low-gap semiconductor indium antimonide materials are also the preferable selection for preparing novel terahertz detection device.
Indium antimonide materials are a kind of three-five low-gap semiconductors of function admirable, big with electronics saturation drift velocity,
The advantages that mobility is high, and auger coefficient is smaller [12]；Compared to mercury cadmium telluride, the wave-number range of indium antimonide materials phonon absorption
Smaller.Document shows indium antimonide materials in 4.2-6THz (140-200cm-1) there are phonon absorption peaks in band limits；Less than
140cm-1Without phonon absorption peak in (wavelength is more than 70 μm) range, and based on free-carrier Absorption, this makes indium antimonide visit
Survey device works within the scope of the relatively broadband less than 4THz to be possibly realized [13].
Indium antimonide detector of the present invention is, it can be achieved that wide-band response and room temperature to 0.04THz-2.5THz
With the high speed under appropriate cryogenic conditions, highly sensitive detection.0.34THz and 0.5THz is frequency more important in two applications
Point plays an important role [14-16] in military, communication, scientific research etc..Therefore, the present invention will be appropriate by being arranged
Bottom reflecting medium layer, improve the response performance of the Frequency points such as 0.34THz, 0.5THz.
Bibliography referred to above is as follows：
[1]Bowlan,P.,et al.,Terahertz radiative coupling and damping in
multilayer graphene.New J.Phys.16(2014)013027.
[2]Sizov,F.and A.Rogalski,THz detectors.Prog.Quant.Electron.,2010.34
(5):p.278-347.
[3]Tonouchi,M.,Cutting-edge terahertz technology.Nature Photon.,
2007.1(2):p.97-105.
[4]Tang,L.,et al.,Nanometre-scale germanium photodetector enhanced by
a near-infrared dipole antenna.Nature Photon.,2008.2(4):p.226-229.
[5]Rogalski,A.,J.Antoszewski,and L.Faraone,Third-generation infrared
photodetector arrays.J.Appl.Phys.,2009.105(9)091101.
[6]Horiuchi,N.,Terahertz Technology Endless Applications.Nature
Photon.,2010.4(3):p.140-140.
[7]Padman,R.,et al.,A Dual-Polarization InSb Receiver for 461/492
GHz.Int.J.Infrared Milli.,1992.13(10):p.1487-1513.
[8]Z.M.Huang,J.C.Tong,et al.,Room-Temperature Photoconductivity Far
Below the Semiconductor Bandgap,Adv.Mater.,2014,26(38):6594-6598.
[9]Zhiming Huang,Wei Zhou,et al.,Directly tailoring photon-electron
coupling for sensitive photoconductance,Sci.Rep.,2016,6,22938.
[10]Zhiming Huang,Wei Zhou,et al.,Extreme Sensitivity of Room-
Temperature Photoelectric Effect for Terahertz Detection,Adv.Mater.,2016,28
(1),112-117.
[11]F.Sizov,et al.,Two-color detector:Mercury-cadmium-telluride as a
terahertz and infrared detector,Appl.Phys.Lett.,2015,106(8):814-3526.
[12]Levinshtein,et al.,Handbook series on semiconductor parameters,
v.2:ternary and quaternary III-V compounds.1996:Singapore:World Scientific.
[13]Palik,E.D.,Handbook of Optical constants of Solids.Academic,1985.
[14]J.Li,et al.,Low-noise 0.5 THz all-NbN superconductor-insulator-
supercon-ductor mixer for submillimeter wave astronomy,Appl.Phys.Lett.,2008,
92(22):222504.
[15]O.Mitrofanov,et al.,Collection-mode near-field imaging with 0.5-
THz pulses,IEEE J.Sel.Top.Quantum Electron.,2001,7(4):600.
[16]C.Wang,et al.,0.34-THz Wireless Link Based on High-Order
Modulation for Future Wireless Local Area Network Applications,Ieee T.THz
Sci.Techn.,2014,4(1):75.
Invention content：
The purpose of the present invention is disclosing a kind of structure of indium antimonide terahertz detector, device manufacture method is provided, is solved
Thermoelectronic effect of having determined detector needs the problem that profound hypothermia is freezed and thermal detector response speed is slow, can meet room temperature or appropriate system
High speed, the application demand of highly sensitive terahertz detection are realized under cool condition.
The structure of the indium antimonide terahertz detector of the present invention is described as follows：Fig. 1 and Fig. 2 is respectively detector device of the present invention
Part structure chart and partial enlarged view (side view), Fig. 3 (a) and Fig. 3 (b) are detector device junction composition (vertical view) of the present invention.Such as figure
1, shown in Fig. 3, InSb terahertz detector device architectures include：High Resistivity Si hemispherical mirror 1, alumina substrate 2, epoxide-resin glue
3, metal switching piece 4, conductive silicone grease 5, device tube socket 6, antenna electrode 7, reflecting medium layer 8, gold thread 9, the sensitive member of InSb detections
10, surface passivation film layer 11, chromium gold reflecting layer 12, resin gasket 13.Device architecture is described in detail below：High Resistivity Si hemispherical mirror
1 central lower is followed successively by epoxide-resin glue 3 and substrate 2, and both sides are pasted with metal switching piece 4, the lower section at 2 center of substrate,
It is followed successively by the sensitive member 10 of indium antimonide, surface passivation film layer 11, reflecting medium layer 8, chromium gold metal layer 12.In 2 surface-sensitive of substrate
10 left and right sides of member, making have antenna electrode 7, and first 10 both sides sensitive with indium antimonide are connected respectively, and antenna electrode 7 passes through gold thread 9
It is connected with both sides metal switching piece 4,4 lower section of metal switching piece is connected by conductive silicone grease 5 with 6 pin of device tube socket, on tube socket 6
The resin gasket 13 being just bonded realizes the mechanical support to High Resistivity Si hemispherical mirror 1.Such as Fig. 1, hemispherical mirror 1 uses resistivity big
It is processed into the HIGH-PURITY SILICON of 10000 Ω cm, diameter 12mm, development length 1.74mm；Substrate 2 is aluminium oxide white stone piece,
Thickness is 0.25mm, and size is 1.4mm × 4.2mm；Sensitive first 8-11 μm of 10 thickness of indium antimonide, electrode spacing is 15-90 μm, table
Face SiOxPassivation film thickness 700nm；Antenna electrode 7 is the butterfly electrode or overall length 0.60-0.90mm of overall length 0.45-0.90mm
Log spiral antenna, Cr layers of 30nm, Au layers of 400nm；Backside reflection dielectric layer 8 is the SiO of thickness 0.54mm2Piece or thickness
The high resistant silicon chip of 0.31mm, size 1.5mm × 3mm, reflecting layer are chromium gold film layer, Cr layers of 30nm, Au layers of 400nm.Such as Fig. 3, device
It is 3mm square to have the both sides that resin gasket 13 is bonded in substrate 2,13 thickness 1.0mm of resin gasket, size above part tube socket, on
Side is bonded with High Resistivity Si hemispherical mirror 1, is realized to High Resistivity Si mirror and sensitive first 10 machinery of InSb detections by resin gasket 13
Support.
Indium antimonide terahertz detector of the present invention is prepared：
(1) epoxide-resin glue is used to be bonded indium antimonide body material (burnishing surface and the lining of single-sided polishing in alumina substrate
Bottom is bonded), it is thinned and polishes, obtain indium antimonide thin layer；Using chemical vapour deposition technique in indium antimonide thin layer surface low-temperature epitaxy
SiOxPassivating film；
(2) it uses the semiconductor etching process that wet-dry change etching combines to make the sensitive first table top of indium antimonide, uses photoetching, plating
Alumina substrate is pasted High Resistivity Si lens centre and draws spun gold lead by the plane coupled antenna of gold process making devices
Onto switching sheet metal；
(3) setting suitable thickness, the gold-plated reflecting medium layer in the back side in the sensitive member of device, it is special to enhance sensitive first position
Determine the electric field strength of frequency THz wave；Size 1.5mm × 3mm, the SiO of thickness 0.54mm are set2Dielectric layer or thickness
The high resistant silicon dielectric layer of 0.31mm, lower surface chromium plating golden membranous layer.For 340GHz and 500GHz light waves, what this dielectric layer generated
Optical path difference is quarter-wave even-multiple, may make the terahertz light for being reflected back device position identical as incident light phase
And relevant enhancing so that device enhances in the response of the two wavelength locations；
(4) it realizes that switching sheet metal and device pin are electrically connected using conductive silicone grease, resin gasket is used to realize pair
The mechanical support of silicon mirror and device.
The sensitive detection parts of metal-indium antimonide-metal structure of the present invention are, it can be achieved that broadband to 0.04THz-2.5THz
The terahertz light of fractional transmission can be reflected back device by response and high speed, highly sensitive detection in conjunction with bottom reflecting medium layer appropriate
The response of the frequency points such as 0.34THz, 0.5THz, the device relative to areflexia dielectric layer are improved with the relevant enhancing of former incident light in position
Part improves about 100% or more.
Description of the drawings：
Fig. 1 is the InSb terahertz detectors device junction composition (side view) of the present invention.
Fig. 2 is the partial enlarged view (side view) of panel detector structure figure.
Fig. 3 is the InSb terahertz detector device junction compositions of 1-6 of the embodiment of the present invention, wherein figure (a) is that the present invention is real
The InSb terahertz detector device junction compositions for applying a 1-3, using log spiral antenna electrode；It is the embodiment of the present invention to scheme (b)
The InSb terahertz detectors device junction composition (vertical view) of 4-6, using butterfly antenna electrode.
Fig. 4 is the InSb terahertz detector preparation method flow charts of the present invention.
Specific implementation mode
To make the object, technical solutions and advantages of the present invention clearer, the example of the present invention is described below in conjunction with the accompanying drawings
The technical solution of property embodiment.
According to above structure, 6 embodiment detectors have been made：
Embodiment detector 1~3：Side view is as shown in Figure 1, vertical view is corresponding with Fig. 3 (a).On substrate 2, successively
For the sensitive member 10 of indium antimonide, surface passivation film layer 11, reflecting medium layer 8, chromium gold metal layer 12.In 2 surface-sensitive member 10 of substrate
The left and right sides, making has antenna electrode 7, and 10 both sides sensitive first with indium antimonide are connected respectively, and sensitive member 10 is wide 50 μm micro-
Table top, surface SiOx11 thickness 700nm of passivating film；2 thickness 0.25mm of aluminium oxide white stone substrate, size are 1.4mm × 4.2mm；
Backside reflection dielectric layer 8 is thickness 0.54mm, the SiO of size 1.5mm × 3mm2Piece.There is resin gasket 13 on device tube socket 6
In the both sides of substrate 2,13 size of resin gasket is 3mm square, and top is bonded with High Resistivity Si hemispherical mirror 1, passes through resin mat
Piece is realized to High Resistivity Si hemispherical mirror 1 and sensitive first 10 mechanical support of InSb detections.In embodiment 1, sensitive 8 μm of thickness of member,
15 μm of both sides electrode spacing is connected with two spiral arms that the log spiral antenna electrode of overall length 0.6mm is centrosymmetric respectively；It is real
It applies in example 2, sensitive 10 μm of thickness of member, 50 μm of both sides electrode spacing is in respectively with the log spiral antenna electrode of overall length 0.75mm
Centrosymmetric two spiral arms are connected；In embodiment 3,90 μm of sensitive member both sides electrode spacing, 11 μm of thickness, respectively with overall length
Two spiral arms that the log spiral antenna electrode of 0.90mm is centrosymmetric are connected.
Embodiment detector 4~6：Side view is as shown in Figure 1, vertical view is corresponding with Fig. 3 (b).On substrate 2, successively
For the sensitive member 10 of indium antimonide, reflecting medium layer 8, surface passivation film layer 11, chromium gold metal layer 12.In substrate surface sensitive first 10
The left and right sides, making have antenna electrode 7, and first both sides sensitive with indium antimonide are connected respectively.Micro- table top that sensitive member is wide 50 μm, table
Face SiOxPassivation film thickness 700nm；2 thickness 0.25mm of aluminium oxide white stone substrate, size are 1.4mm × 4.2mm；Backside reflection is situated between
Matter layer 8 is thickness 0.31mm, the high resistant silicon chip of size 1.5mm × 3mm.There is resin gasket 13 the two of substrate 2 on device tube socket 6
Side, 13 size of resin gasket are 3mm square, and top is bonded with High Resistivity Si hemispherical mirror 1, are realized to High Resistivity Si by resin gasket
Mirror 1 and sensitive first 10 mechanical support of InSb detections.In embodiment 4,15 μm of sensitive member both sides electrode spacing, 8 μm of thickness, both sides
It is connected respectively with two butterfly valves of symmetrical, overall length 0.45mm butterfly antenna；In embodiment 5, between two lateral electrodes of sensitive member
Away from 50 μm, 10 μm of thickness, both sides are connected with two butterfly valves of symmetrical, overall length 0.60mm butterfly antenna respectively, embodiment 6
In, 90 μm of sensitive member both sides electrode spacing, 11 μm of thickness, both sides respectively with symmetrical, overall length 0.90mm butterfly antenna
Two butterfly valves are connected.
Fig. 4 is InSb terahertz detector preparation method flow charts used in 1-6 of the embodiment of the present invention.As shown in figure 4,
InSb terahertz detector preparation methods include patch and making InSb film layers are thinned, and it is quick to make detector for surface passivating treatment
Sense member and coupled antenna electrode, several flows, the detailed process such as substrate cutting and device spot welding encapsulation are described as follows：
1. selecting the undoped single throwing N-shaped InSb monocrystal materials of (111) crystal orientation, monocrystalline is protected using 1500 photoresists of AZ
The shiny surface of material along material cleavage surface scribing and is cut using diamant, and acquisition area is 1.2 × 1.2cm2Quadrate In Sb
Substrate slice.
2. using acetone, alcohol, deionized water cleaning sample piece, dried up using drying nitrogen.It will using epoxide-resin glue
The shiny surface of InSb body material samples is pasted onto diameter 18mm, in the alumina substrate 2 of thickness 0.25mm.Pass through hand sand
InSb substrate slices are thinned to 50 microns by mode, are used mechanical polisher instead and are further thinned, and it is micro- that thicknesses of layers is thinned to 8-11
Rice.
3. material surface is passivated.Using the low pressure chemical vapor deposition reactor of Tystar companies, enhance low temperature depositing using ultraviolet light
Mode prepares SiOxDeielectric-coating is as material surface passivation film.It is passivated film preparation in two steps：The first step, working gas SiH4：
Ni2O=6sccm:120sccm, sedimentation time 30 minutes, operating air pressure 800mTorr, 150 DEG C of depositing temperature；Second step, work
Gas SiH4：Ni2O=10sccm:60sccm, sedimentation time 50 minutes, operating air pressure 600mTorr, 150 DEG C of depositing temperature are blunt
Change layer overall thickness is 700nm.
4. figure photoetching and wet etching.Photoresist AZ 5200 is selected to carry out figure photoetching, spin coating machine speed is set as 4000
Rev/min, spin coating time is set as 30 seconds.Figure photoetching, development obtain photoetching adhesive tape.Wet etching：According to HF：HAC：H2O2=1:
1:1 ratio prepares etching liquid, carries out wet etching, obtains the InSb table tops of partial etching (6-7 microns of etching depth).Dry method
Etching：Using argon ion dry etching method, remaining InSb material layers and epoxy resin adhesive-layer are removed, obtains micro- of InSb
Face.Acetone, alcohol, deionized water cleaning sample piece 3 minutes successively are used respectively, and residual photoresist is removed totally, nitrogen is used
Gas dries up print.
5. gold-plated.Photoresist AZ4620 is selected to carry out figure photoetching, spin coating machine speed is set as 4000 revs/min, spin coating time
It is set as 30 seconds.Figure photoetching, development obtain antenna electrode pattern.The Cr films and 400nm thickness of 30nm thickness are coated with using magnetron sputtering
Au films.Using acetone soak sample 5 minutes, gold was removed photoresist and is floated in completion.Use alcohol, deionized water cleaning sample piece, nitrogen
Drying.Produce log spiral antenna electrode 7, overall antenna length 0.60mm-0.90mm, 15-90 μm of electrode spacing, such as Fig. 3 a institutes
Show.Optionally, making butterfly antenna 7, overall antenna length 0.45mm-0.90mm, 15-90 μm of electrode spacing, as shown in Figure 3b.
6. slice and spot welding.Scribing is carried out to sample along cross alignment mark using diamant scribing machine.Use asphalt mixtures modified by epoxy resin
Alumina substrate 2 is adhered to the center of the hemispherical silicon mirror 1 of diameter 12mm, development length 1.74mm by fat glue 3, is used
WT-2330 types gold wire bonder is welded into line lead, and using 25 microns of gold thread 9 of diameter, device antenna electrode 7 is connected to
It is adhered on the metal switching piece 4 of 1 surface substrate of High Resistivity Si mirror, 2 both sides in advance.
7. the setting of backside reflection dielectric layer 8.Thickness 0.54mm, the SiO of size 1.5mm × 3mm are set2Substrate slice conduct
Reflecting medium layer 8, optionally, be arranged thickness 0.31mm, the high resistant silicon chip of size 1.5mm × 3mm as reflecting medium layer 8, and
Chromium plating gold reflecting layer 11 on this, Cr film thickness 30nm, Au film thickness 400nm.Reflecting medium layer 8 is pasted using epoxide-resin glue
Device surface, 8 center of reflecting medium layer alignment detection member.
8. realizing being electrically connected for metal switching piece 4 and device tube socket 6 using conductive silicone grease 5, using resin gasket 13, lead to
Epoxy resin glue sticking is crossed, realizes device tube socket 6 to High Resistivity Si hemispherical mirror 1 and sensitive first 10 mechanical support of InSb detections.
9. obvious described embodiment is a part of the embodiment of the present invention, instead of all the embodiments.It is retouched
The embodiment stated is only used for illustrating, rather than limiting the scope of the invention.Based on the embodiment of the present invention, this field is general
All other embodiment that logical technical staff is obtained without creative efforts belongs to what the present invention protected
Range.
Claims (2)
1. a kind of indium antimonide terahertz detector, including High Resistivity Si hemispherical mirror (1), substrate (2), indium antimonide sensitive first (10),
Surface passivation film layer (11), antenna electrode (7), reflecting medium layer (8) and chromium gold metal layer (12), it is characterised in that detector knot
Structure is as follows：
Described High Resistivity Si hemispherical mirror (1) central lower is followed successively by epoxide-resin glue (3) and substrate (2), the high resistant of both sides
Silicon hemispherical mirror (1) surface mount has metal switching piece (4), the lower section at substrate (2) center, is followed successively by the sensitive member of indium antimonide
(10), surface passivation film layer (11), reflecting medium layer (8), chromium gold metal layer (12)；It is left in substrate (2) surface-sensitive first (10)
Right both sides, making have antenna electrode (7), and first (10) both sides sensitive with indium antimonide are connected respectively, and antenna electrode (7) passes through gold thread
(9) it is connected with both sides metal switching piece (4), passes through the pipe of conductive silicone grease (5) and the sensitive member of indium antimonide below metal switching piece (4)
Seat (6) pin is connected, and the resin gasket (13) being bonded above tube socket (6) realizes the mechanical support to High Resistivity Si hemispherical mirror (1)；
The substrate (2) is aluminium oxide white stone piece, and thickness 0.25mm, size is 1.4mm × 4.2mm；The indium antimonide is quick
First 8-11 μm of (10) thickness of sense, electrode spacing are 15-90 μm；The antenna electrode (7) is the butterfly of overall length 0.45-0.90mm
The log spiral antenna electrode of antenna electrode or overall length 0.6-0.9mm；The reflecting medium layer (8) is thickness 0.54mm,
The SiO of size 1.5mm × 3mm2Piece or thickness 0.31mm, the high resistant silicon chip of size 1.5mm × 3mm.
2. indium antimonide terahertz detector according to claim 1, which is characterized in that the system of the terahertz detector
Steps are as follows for Preparation Method：
Step 1：The indium antimonide body material of single-sided polishing is bonded in alumina substrate using epoxide-resin glue, is thinned and obtains antimony
Indium thin layer；Using chemical vapour deposition technique in indium antimonide thin layer surface low-temperature epitaxy SiOxPassivating film；
Step 2：The sensitive first table top of indium antimonide is made using semiconductor etching process；Plane, which is made, using craft of gilding couples day
Line；
Step 3：Substrate is pasted into High Resistivity Si hemispherical mirror center and metal lead wire is drawn out on metal switching piece；In antimony
The gold-plated dielectric layer in the back side of suitable thickness is set in the sensitive member of indium, enhances the electric field strength of sensitive first position THz wave；
Step 4：Being electrically connected for the sensitive first tube socket of metal switching piece and indium antimonide is realized using conductive silicone grease, uses resin gasket
Realize the mechanical support to High Resistivity Si hemispherical mirror and the sensitive member of indium antimonide.
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| CN108231541B (en) * | 2018-01-04 | 2020-06-02 | 云南北方昆物光电科技发展有限公司 | Method for cleaning indium antimonide polished wafer |
| CN109557042B (en) * | 2018-11-26 | 2021-10-08 | 广东朗研科技有限公司 | Nano-mesoporous metal film plating structure based on semiconductor and terahertz wave enhancement system |
| CN110160659B (en) * | 2019-05-17 | 2023-09-12 | 中国科学院上海技术物理研究所 | Uncooled infrared narrow-band detector with etched sensitive elements and preparation method |
| CN110265491A (en) * | 2019-05-17 | 2019-09-20 | 中国科学院上海技术物理研究所 | A kind of the uncooled ir narrowband detector and preparation method on the super surface of silicon medium |
| CN110246914A (en) * | 2019-05-17 | 2019-09-17 | 中国科学院上海技术物理研究所 | A kind of enhanced terahertz detector of etching based on indium antimonide and preparation method |
| CN110617882B (en) * | 2019-09-10 | 2023-07-04 | 中国科学院上海技术物理研究所 | Temperature-sensing terahertz detector based on phase-change material and preparation method |
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