CN108231541B - Method for cleaning indium antimonide polished wafer - Google Patents
Method for cleaning indium antimonide polished wafer Download PDFInfo
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- CN108231541B CN108231541B CN201810008754.XA CN201810008754A CN108231541B CN 108231541 B CN108231541 B CN 108231541B CN 201810008754 A CN201810008754 A CN 201810008754A CN 108231541 B CN108231541 B CN 108231541B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- Mechanical Treatment Of Semiconductor (AREA)
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Abstract
The invention relates to a method for cleaning an indium antimonide polished wafer, belonging to the technical field of photoelectric materials. The method comprises the steps of soaking or washing the indium antimonide polished wafer by sequentially adopting toluene at 15-25 ℃, toluene at 50-60 ℃, acetone, ethanol, pure water solution containing high-power detergent at 50-60 ℃ and pure water, wherein ultrasonic cleaning is avoided, and the pure water solution does not chemically react with the surface of the indium antimonide polished wafer in the cleaning process, so that secondary damage to the surface of the indium antimonide polished wafer is avoided, and the flatness of the surface of the indium antimonide polished wafer can be ensured; compared with the introduced oxidant or corrosive agent, the introduced high-strength detergent can be simply washed clean by pure water without introducing new impurities. The indium antimonide polished wafer surface cleaned by the method has excellent flatness and cleanliness, and can meet the requirements of high-quality no-clean polished wafers.
Description
Technical Field
The invention relates to a method for cleaning an indium antimonide polished wafer, belonging to the technical field of photoelectric materials.
Background
Indium antimonide is a III-V group compound semiconductor material, has unique semiconductor properties such as extremely high electron mobility, small forbidden band width, small electron effective mass and the like, and has important application value and prospect in the fields of infrared detection, large-area infrared focal plane array detectors, Hall devices and the like. With the continuous development of indium antimonide infrared detectors, the quality requirements on indium antimonide wafers are higher and higher due to the continuous increase of the number of pixels and the continuous reduction of line widths, and particularly the requirements on the surface quality of indium antimonide polished wafers are tighter and tighter. Because the performance, reliability, stability and yield of devices can be seriously influenced by particles, metal contamination, organic contamination, a natural oxide layer, surface roughness and the like on the surface of the polished wafer, the surface cleaning of the indium antimonide polished wafer becomes a crucial link in the production of the indium antimonide devices.
In the production of polished wafers, the processes of cutting, grinding and CPM (chemical mechanical planarization) require a large amount of chemicals such as various adhesives, abrasives, cooling liquids, polishing waxes and polishing liquids, which inevitably cause various contaminants to the polished wafers. Generally, contaminants on the surface of a polished wafer can be classified into three major categories, organic impurity contaminants, particle contaminants, and metal ion contaminants. Wherein the adhesion of particles to the surface of the polished wafer affects the geometrical and electrical properties of the next process step; organic impurity contamination causes the formation of an organic thin film on the surface of a polished wafer, resulting in the inability to remove metal ion contamination, and also causes the appearance of white spots on the surface of an epitaxial wafer when the polished wafer is used as a substrate (wax and organic solvents are important contamination sources); metal ion contamination can lead to increased leakage current and reduced minority carrier lifetime at the P-N junction, thereby severely impacting device stability and reliability. It can be seen that the surface of a high quality, no-clean polished wafer should have the following elements: the surface is free from particles, organic matters and metal ion contamination; the surface oxide layer must be able to be completely removed by high temperature treatment and the polished wafer surface must be flat and uniform after removing the oxide layer.
In order to effectively remove particles from the surface of a polished wafer, the mechanism of particle adsorption and removal must be understood. The adsorption of particles is mainly by four forces: electrostatic attraction, van der waals forces (molecular forces), chemical bonding forces, and resistance to surface roughness. The removal mechanism of surface particles can be divided into four categories: the particles and the contaminants are directly dissolved in the cleaning solution; the particles and the stickies are oxidized and then dissolved in the cleaning solution; corroding the surface of the polished wafer by the cleaning solution so as to enable the particles to be separated from the surface of the polished wafer; causing an electrostatic repulsive force between the surface of the polished wafer and the particles. The four removal mechanisms are physical and chemical in order to gradually reduce the contact area of the particles with the polished wafer, which is eventually removed. The physical method mainly comprises contact type surface cleaning and non-contact type surface cleaning, wherein the non-contact type surface cleaning comprises ultrasonic cleaning and megasonic cleaning, the ultrasonic cleaning can remove most of particles adsorbed on the surface of a polished wafer, but the cleaning effect cannot meet the rigorous requirement of application in a special field, and the particles falling from the surface of the polished wafer can scratch the surface of the polished wafer in the ultrasonic process. The chemical methods mainly comprise the following steps: firstly, an oxidant and a corrosive agent act on the surface of a polished wafer to generate an oxide layer-corrosion-oxide layer-corrosion reaction, and the reaction is repeated, so that particles and a part of metal ion impurities attached to the surface of the polished wafer fall into a cleaning solution along with a corrosion layer; secondly, a strong oxidant is used to oxidize the metal attached to the surface of the polished wafer into metal ions, and the metal ions are dissolved in the cleaning solution or adsorbed on the surface of the polished wafer, and then harmless small-diameter positive ions (such as H ions) are used to replace the metal ions adsorbed on the surface of the polished wafer, so that the metal ions are dissolved in the cleaning solution. The oxidizing agent and the corrosive agent added in the chemical method can form new impurities, and the corrosive agent does not uniformly corrode the surface of the polished wafer, so that secondary damage can be caused to the surface of the polished wafer, and the performance of the polished wafer is influenced.
Disclosure of Invention
The method mainly adopts a heated toluene solvent and warm water added with a specific cleaning agent to clean and remove impurities on the surface of the indium antimonide polished wafer, avoids ultrasonic cleaning, does not chemically react with the surface of the indium antimonide polished wafer in the cleaning process, can ensure the flatness of the surface of the indium antimonide polished wafer, and can meet the requirement of high-quality cleaning-free polished wafers.
The purpose of the invention is realized by the following technical scheme.
A method for cleaning an indium antimonide polished wafer, comprising the steps of,
(1) soaking the indium antimonide polished wafer in toluene at 15-25 ℃ for 20-24 h, transferring the indium antimonide polished wafer to toluene at 50-60 ℃, continuing to soak for 20-25 min, cleaning the indium antimonide polished wafer soaked in toluene for the second time with acetone, removing the toluene on the surface of the indium antimonide polished wafer, cleaning the indium antimonide polished wafer with ethanol, and removing the acetone on the surface of the indium antimonide polished wafer;
(2) washing the indium antimonide polished wafer cleaned by ethanol by using a pure water solution containing high-power detergent at 50-60 ℃, washing for 5-8 min, washing for more than 10min by using pure water to remove the detergent on the surface of the indium antimonide polished wafer, and drying to finish cleaning the indium antimonide polished wafer;
wherein the volume fraction of the high-potency liquid detergent in the pure water solution is 2-5%; all of the above operations were performed in a hundred stage ultra clean room and the operation of soaking the indium antimonide polished wafers with toluene was performed in a fume hood.
Has the advantages that:
the method mainly comprises the steps of soaking the indium antimonide polished wafer in a toluene solvent with a specific temperature, and cleaning the indium antimonide polished wafer by adopting a pure water solution with a specific temperature and rich in high-power detergent, so that impurities on the surface of the indium antimonide polished wafer are removed, and the cleaned indium antimonide polished wafer can meet the requirement of a high-quality no-clean polished wafer. The method avoids adopting ultrasonic cleaning, and the cleaning process can not generate chemical reaction with the surface of the indium antimonide polished wafer, thereby avoiding secondary damage to the surface of the indium antimonide polished wafer caused by the cleaning process and ensuring the flatness of the surface of the indium antimonide polished wafer; compared with the introduced oxidant or corrosive agent, the introduced liquid detergent can be simply washed clean by pure water, and new impurities can not be introduced. The indium antimonide polished wafer processed by the method has excellent cleanliness and flatness, and can obviously improve the performance of a device prepared by the indium antimonide polished wafer.
Detailed Description
The present invention will be further described with reference to the following embodiments.
Example 1
A method for cleaning an indium antimonide polished wafer, comprising the steps of,
(1) putting a thin layer of long fiber cotton at the bottom of a culture dish, putting an indium antimonide polished wafer into the culture dish, adding toluene, soaking for 24 hours at room temperature (20 ℃), replacing the toluene in the culture dish, keeping the temperature of the newly added toluene at 60 ℃ by adopting a water bath heating mode, and continuously soaking for 20 minutes in the toluene at 60 ℃;
(2) transferring the indium antimonide polished wafer soaked in the toluene for the second time into a culture dish containing acetone, and soaking for 10min at room temperature to remove the toluene on the surface of the indium antimonide polished wafer; wherein, a thin layer of long fiber cotton is placed at the bottom of the culture dish containing acetone;
(3) transferring the indium antimonide polished wafer soaked by the acetone into a culture dish containing absolute ethyl alcohol, and soaking for 10min at room temperature to remove the acetone on the surface of the indium antimonide polished wafer; wherein, a thin layer of long cellucotton is placed at the bottom of the culture dish containing the absolute ethyl alcohol;
(4) adding the high-power detergent into pure water at 60 ℃, uniformly mixing, washing the indium antimonide polished wafer soaked by absolute ethyl alcohol by using the prepared pure water solution containing the high-power detergent at 60 ℃, washing for 6min, and washing for 15min by using pure water, thus finishing the cleaning of the indium antimonide polished wafer; blowing the cleaned indium antimonide polished wafer by high-purity nitrogen (the purity is more than 99.999%) and storing for later use;
wherein the volume fraction of the high-power detergent in the pure water solution is 3 percent; the steps (1) to (4) were all performed in a hundred-class ultra clean room, and the immersion of the indium antimonide polished wafer in toluene was performed in a fume hood.
And observing the surface of the cleaned indium antimonide polished wafer by using a metallographic microscope dark field, wherein the magnification factor is 100, and no bright point is observed under the dark field, which indicates that no impurities exist on the surface of the cleaned indium antimonide polished wafer.
In summary, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (1)
1. A method for cleaning an indium antimonide polished wafer is characterized in that: the steps of the method are as follows,
(1) immersing 15 an indium antimonide polished waferoC~25oSoaking the indium antimonide polished wafer in toluene for 20-24 h, and transferring the indium antimonide polished wafer to 50oC~60oC, continuing to soak in the toluene for 20-25 min, and then sequentially cleaning the indium antimonide polished wafer by using acetone and ethanol;
(2) by 50oC~60oC, washing the indium antimonide polished wafer cleaned by the ethanol by using a pure water solution containing the detergent of the Fuli brand, washing for 5-8 min, washing for more than 10min by using pure water, and drying to finish cleaning the indium antimonide polished wafer;
wherein, the step (1) and the step (2) are operated in a hundred-grade ultra-clean room;
the volume fraction of the Fuli brand liquid detergent in the pure water solution is 3 percent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810008754.XA CN108231541B (en) | 2018-01-04 | 2018-01-04 | Method for cleaning indium antimonide polished wafer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810008754.XA CN108231541B (en) | 2018-01-04 | 2018-01-04 | Method for cleaning indium antimonide polished wafer |
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| CN108231541A CN108231541A (en) | 2018-06-29 |
| CN108231541B true CN108231541B (en) | 2020-06-02 |
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| CN109860025B (en) * | 2019-02-01 | 2021-08-06 | 天津中环领先材料技术有限公司 | Cleaning method for ground silicon wafer |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0394082A (en) * | 1989-06-12 | 1991-04-18 | Kao Corp | Detergent composition |
| CN1132239A (en) * | 1994-10-13 | 1996-10-02 | 花王株式会社 | Cleaning process and detergent used therefor |
| CN101912857A (en) * | 2010-07-21 | 2010-12-15 | 河北工业大学 | Surface cleaning method on indium antimonide wafer after alkaline chemical mechanical polishing |
| CN101974377A (en) * | 2010-11-10 | 2011-02-16 | 南通海迅天恒纳米科技有限公司 | LED gallium arsenide substrate dewaxing cleaning agent |
| CN104450280A (en) * | 2014-11-17 | 2015-03-25 | 如皋市大昌电子有限公司 | Cleaning liquid special for diode semiconductor |
| CN107068783A (en) * | 2016-11-25 | 2017-08-18 | 中国科学院上海技术物理研究所 | A kind of indium antimonide terahertz detector and preparation method |
-
2018
- 2018-01-04 CN CN201810008754.XA patent/CN108231541B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0394082A (en) * | 1989-06-12 | 1991-04-18 | Kao Corp | Detergent composition |
| CN1132239A (en) * | 1994-10-13 | 1996-10-02 | 花王株式会社 | Cleaning process and detergent used therefor |
| CN101912857A (en) * | 2010-07-21 | 2010-12-15 | 河北工业大学 | Surface cleaning method on indium antimonide wafer after alkaline chemical mechanical polishing |
| CN101974377A (en) * | 2010-11-10 | 2011-02-16 | 南通海迅天恒纳米科技有限公司 | LED gallium arsenide substrate dewaxing cleaning agent |
| CN104450280A (en) * | 2014-11-17 | 2015-03-25 | 如皋市大昌电子有限公司 | Cleaning liquid special for diode semiconductor |
| CN107068783A (en) * | 2016-11-25 | 2017-08-18 | 中国科学院上海技术物理研究所 | A kind of indium antimonide terahertz detector and preparation method |
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| CN108231541A (en) | 2018-06-29 |
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Address after: 650223 201 building, 31 East teaching street, Kunming, Yunnan. Patentee after: Yunnan Kunwu Xinyue Photoelectric Technology Co., Ltd Address before: 650223 201 building, 31 East teaching street, Kunming, Yunnan. Patentee before: YUNNAN BEIFANG KUNWU PHOTOELECTRIC TECHNOLOGY DEVELOPMENT Co.,Ltd. |
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