CN117153667A - Cleaning process of indium phosphide wafer - Google Patents
Cleaning process of indium phosphide wafer Download PDFInfo
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- CN117153667A CN117153667A CN202311045996.3A CN202311045996A CN117153667A CN 117153667 A CN117153667 A CN 117153667A CN 202311045996 A CN202311045996 A CN 202311045996A CN 117153667 A CN117153667 A CN 117153667A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 120
- 238000000034 method Methods 0.000 title claims abstract description 31
- 230000008569 process Effects 0.000 title claims abstract description 30
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 235000012431 wafers Nutrition 0.000 claims abstract description 68
- 239000000243 solution Substances 0.000 claims abstract description 56
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 43
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 29
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 22
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims abstract description 16
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000002791 soaking Methods 0.000 claims abstract description 13
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 10
- 239000011259 mixed solution Substances 0.000 claims abstract description 8
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims abstract description 6
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 claims abstract description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- 238000011010 flushing procedure Methods 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 239000000758 substrate Substances 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000002351 wastewater Substances 0.000 abstract 4
- 230000000052 comparative effect Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000003749 cleanliness Effects 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000004018 waxing Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- -1 metal compound ions Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The application belongs to the field of semiconductor substrate manufacturing, and relates to a cleaning process of an indium phosphide wafer. The method comprises the following steps: sequentially soaking polished and waxed wafers in hot concentrated sulfuric acid and cold concentrated sulfuric acid; placing the wastewater into an S1 cleaning solution for cleaning, wherein the S1 cleaning solution is a tetramethylammonium hydroxide solution; placing the wastewater into an S2 cleaning solution for cleaning, wherein the S2 cleaning solution is a mixed solution of nitric acid and water; placing the wastewater into an S3 cleaning solution for cleaning treatment, wherein the S3 cleaning solution is hydrogen peroxide; placing the wastewater into an S4 cleaning solution for cleaning, wherein the S4 cleaning solution is phosphoric acid and/or sulfurous acid; and (5) drying. The cleaning process can improve the yield of products and reduce the production cost.
Description
Technical Field
The application belongs to the field of semiconductor substrate manufacturing, and relates to a cleaning process of an indium phosphide wafer.
Background
Indium phosphide (InP), which is a second-generation semiconductor material, is one of important iii-v compound semiconductor materials, and is also a new-generation electronic functional material subsequent to Si and GaAs. Indium phosphide has many advantages, direct transition type energy band structure, high electro-optic conversion efficiency and electron mobility, easy preparation of semi-insulating sheet material, suitability for manufacturing high-frequency microwave devices and circuits, high working temperature, strong radiation resistance, high conversion efficiency as solar cell material, and the like. These characteristics determine that their application in solid-state lighting, microwave communications, fiber optic communications, guidance/navigation, satellites, and other civilian and military fields is quite broad.
However, a series of complicated processing processes are required in the production process from the indium phosphide crystal to the indium phosphide wafer substrate. Wherein cleaning of the indium phosphide wafer is one of the most critical processes during the pre-process of opening the box for use. The cleaning of the indium phosphide wafer directly affects the cleanliness, roughness, oxide thickness, haze, surface impurity content, etc. of the substrate surface, which all affect InP subsequent epitaxy and device performance.
The existing cleaning process has the following problems: after cleaning, the surface of the wafer can be corroded, so that the surface of the wafer is more in particles and overlarge in roughness, a thicker oxide film can be formed on the surface of the wafer, meanwhile, uncontrollable white fog defects can be generated on the surface of the wafer, the content of surface impurities exceeds the standard and is not in accordance with the requirements, the overall yield is low, and the production cost is high.
Disclosure of Invention
The application aims to provide a cleaning process for an indium phosphide wafer, which has high yield and low production cost. The cleaning process ensures the cleanliness of the surface of the wafer, does not damage the roughness of the polished wafer, reduces the thickness of oxide layers, controls the surface white fog and effectively controls the content of surface impurities.
In order to achieve the above purpose, the technical scheme adopted by the application is as follows:
a cleaning process of an indium phosphide wafer comprises the following steps:
(1) Sequentially soaking polished and waxed wafers in hot concentrated sulfuric acid and cold concentrated sulfuric acid;
(2) Placing the wafer treated in the step (1) into an S1 cleaning solution for cleaning treatment, wherein the S1 cleaning solution is a tetramethylammonium hydroxide solution;
(3) Placing the wafer processed in the step (2) into an S2 cleaning solution for cleaning, wherein the S2 cleaning solution is a mixed solution of nitric acid and water, or the S2 cleaning solution is a mixed solution of hydrofluoric acid, hydrochloric acid and water;
(4) Placing the wafer processed in the step (3) into an S3 cleaning solution for cleaning, wherein the S3 cleaning solution is hydrogen peroxide solution;
(5) Placing the wafer treated in the step (4) into an S4 cleaning solution for cleaning treatment, wherein the S4 cleaning solution is phosphoric acid and/or sulfurous acid;
(6) And (5) drying the wafer treated in the step (5).
The cleaning process of the application creatively introduces the S1 cleaning solution, the S2 cleaning solution, the S3 cleaning solution and the S4 cleaning solution to clean the indium phosphide wafer: step (1) removing organic matters on the surface of the crystal by using concentrated sulfuric acid; setting a strong alkaline tetramethyl ammonium hydroxide solution to remove organic matters and metal ions; setting strong oxidizing acid, which has good effect of removing most metal elements; step (4) setting a strong oxidant solution to remove inorganic impurities; the cleaning agent in the step (5) can effectively remove silicon dioxide on the surface of the wafer, and reduce the thickness of the oxide layer; and (3) drying the wafer in the step (6).
Further, in the step (1):
the hot concentrated sulfuric acid treatment process specifically comprises the following steps: soaking for 1-10 s; the temperature is 60-90 ℃; the mass concentration of the sulfuric acid is 70-98%.
Further, in the step (1):
the cold concentrated sulfuric acid treatment process specifically comprises the following steps: soaking for 1-10 s; the temperature is 20-30 ℃; the mass concentration of the sulfuric acid is 70-98%.
Further, in the step (2), the pH value of the tetramethylammonium hydroxide solution in the S1 cleaning solution is more than or equal to 12.5; the cleaning treatment temperature is 20-30 ℃; the cleaning treatment time is 20-40 s.
Further, in the step (3), the volume ratio of nitric acid to water in the S2 cleaning solution is 1-2: 5-10; the mass concentration of nitric acid used for configuration is more than or equal to 69.0%; the cleaning treatment time is 30-60 s.
Further preferably, the mass concentration of the nitric acid is 69.0 to 72.0%.
Further, in the step (4), the mass concentration of hydrogen peroxide in the S3 cleaning solution is more than or equal to 30.0%, and the cleaning treatment time is 30-90S.
Further preferably, the hydrogen peroxide has a mass concentration of 30.0 to 32.0%.
Further, in the step (5), the mass concentration of phosphoric acid in the S4 cleaning solution is not less than 85.0%, and the cleaning treatment time is 30-60S.
Further, in the steps (2) - (5), the cleaning treatment temperature is below 25 ℃.
Further, in the steps (2) - (6), clear water flushing treatment is arranged between the adjacent steps, and the flushing treatment specifically comprises: and placing the wafer into a water bowl, and using a water gun to wash the water bowl to keep a water overflow state, wherein the overflow water amount is 10-50L/min.
Compared with the prior art, the application has the beneficial effects that:
(1) According to the cleaning process disclosed by the application, through introducing the S1 cleaning solution, the S2 cleaning solution, the S3 cleaning solution and the S4 cleaning solution, metal compound ions, organic particles, heavy metals and inorganic impurities on the surface of the indium phosphide wafer substrate can be effectively removed, the cleanliness of the wafer surface is ensured, meanwhile, the roughness of the polished wafer is not damaged, the thickness of an oxide layer is reduced, the surface white fog is controlled, and the content of the surface impurities is effectively controlled. Finally, the surface quality of the substrate is optimized and improved, and the purpose of customer use is met.
(2) The cleaning process can improve the yield of products and reduce the production cost.
Detailed Description
The present application will be described more fully hereinafter with reference to the preferred embodiments of the present application in order to facilitate the understanding of the present application, but the scope of the present application is not limited to the following specific embodiments.
Unless defined otherwise, all technical and scientific terms used hereinafter have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the scope of the present application.
The concentrations of the components used in the respective examples and comparative examples of the present application are as follows:
hydrogen peroxide (hydrogen peroxide) with mass concentration of 30.0%;
nitric acid with a mass concentration of 69.0%;
phosphoric acid with a mass concentration of 85.0%;
sulfuric acid with a mass concentration of 96%;
ammonia water with the mass concentration of 96%;
hydrochloric acid with a mass concentration of 36.0%;
tetramethylammonium hydroxide solution, pH 12.5.
Example 1
The embodiment discloses a cleaning process of an indium phosphide wafer, which comprises the following steps:
(1) 10 pieces of waxed indium phosphide 6-inch wafers which are polished by a waxing and polishing process are selected, and soaked in hot sulfuric acid at 85 ℃ for 5 seconds in sequence; soaking in 25 deg.c sulfuric acid for 3s.
(2) Putting into a water bowl, and simultaneously using a water gun to wash the water bowl to keep a water overflow state, wherein the washing time is as follows: 45s.
(3) Placing the wafer treated in the step (2) in tetramethylammonium hydroxide for cleaning treatment, wherein the cleaning treatment temperature is 25 ℃, and the cleaning treatment time is 40 seconds; the wafer was then kept in a water overflow state using a water gun to rinse the bowl for 45s.
(4) Placing the wafer processed in the step (3) into an S2 cleaning solution for cleaning, wherein the volume ratio of nitric acid to water in the S2 cleaning solution is 2:5, a step of; the cleaning treatment time is 60s; the cleaning treatment temperature is 25 ℃; the wafer was then placed in a rinse tank for a rinse time of 40s.
(5) Placing the wafer processed in the step (4) into an S3 cleaning solution for cleaning, wherein the S3 cleaning solution is hydrogen peroxide with the mass concentration of 30.0%; the cleaning treatment time is 30s, and the cleaning treatment temperature is 25 ℃; the wafer was then kept in a water overflow state using a water gun to rinse the bowl for a period of 30s.
(6) Placing the wafer processed in the step (5) into an S3 cleaning solution for cleaning, wherein the S3 cleaning solution is phosphoric acid with the mass concentration of 85.0%; the cleaning treatment time is 30s; the cleaning treatment temperature is 25 ℃; the wafer was then kept in a water overflow state using a water gun to rinse the bowl for a period of 30s.
(7) And spin-drying each wafer after cleaning, placing the wafer in a blocking box dried by nitrogen, and packaging and delivering after the wafer is inspected to be qualified.
Comparative example 1
The comparative example discloses a cleaning process of an indium phosphide wafer, comprising the following steps:
(1) 9 pieces of indium phosphide 3-inch wafers which have been polished by a waxing and polishing process and subjected to waxing are selected and soaked in hot sulfuric acid at 65 ℃ for 5 seconds.
(2) Soaking in sulfuric acid at 25 ℃ for 3s, placing into a water bowl, and simultaneously using a water gun to wash the water bowl to keep a water overflow state, wherein the washing time is as follows: 45s.
(3) Ammonia at 4 ℃): hydrogen peroxide: the volume ratio of deionized water is 1:2:3, soaking the wafer in the mixed solution for 60 seconds, continuously rotating the wafer clamp in the soaking process to ensure that the surface of the wafer is uniformly subjected to liquid, and flushing the wafer by a water gun for a cleaning time: 45s.
(4) Hydrofluoric acid at normal temperature: the volume ratio of deionized water is 3:7, soaking the mixture in the mixed solution for 30s, flushing the mixture by using a water gun, and cleaning the mixture for a period of time: 45s.
(5) Hydrochloric acid at normal temperature: hydrogen peroxide: the volume ratio of deionized water is 3:1:40 is soaked in the mixed solution for 45s.
(6) Placing the water into an overflow tank, and simultaneously flushing the overflow tank by using a water gun to keep a water overflow state, wherein the cleaning time is as follows: 30s.
(7) Soaking in hydrogen peroxide at normal temperature for 30s, flushing with a water gun, and cleaning for a period of time: 45s.
(8) And spin-drying each wafer after cleaning, placing the wafer in a blocking box dried by nitrogen, and packaging and delivering after the wafer is inspected to be qualified.
Examples 2 to 5
To verify the cleaning effect, examples 2 to 5 were consistent with example 1.
Comparative examples 2 to 5
To compare the cleaning effect, comparative examples 2 to 5 were consistent with comparative example 1.
The wafers cleaned in examples 1 to 5 and comparative examples 1 to 5 were tested, and the results are shown in table 1, and the specific test procedure is as follows:
and randomly selecting two cleaned indium phosphide wafer substrate finished products from each experimental group, detecting the number of bright spots on the indium phosphide wafer substrate by using a Tencor machine, and respectively taking an average value from each experimental group.
And randomly selecting two cleaned indium phosphide wafer substrate finished products from each experimental group, detecting the thickness of an oxide layer on the indium phosphide wafer substrate by using an ellipsometer, and respectively taking an average value from each experimental group.
And randomly selecting two cleaned indium phosphide wafer substrate finished products from each experimental group, testing the silicon content and the copper content on the indium phosphide wafer substrate by using TOF-SIMS surface analysis, and respectively taking an average value from each experimental group.
The judgment standard of the yield is as follows: the strong light lamp checks whether scratch, damage, liquid medicine and the like exist on the surface of each wafer.
TABLE 1
It can be seen that the cleaning process of the indium phosphide wafer can effectively improve the cleaning effect of the wafer surface.
The above is only a preferred embodiment of the present application, and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the present application.
Claims (9)
1. A process for cleaning an indium phosphide wafer, comprising the steps of:
(1) Sequentially soaking polished and waxed wafers in hot concentrated sulfuric acid and cold concentrated sulfuric acid;
(2) Placing the wafer treated in the step (1) into an S1 cleaning solution for cleaning treatment, wherein the S1 cleaning solution is a tetramethylammonium hydroxide solution;
(3) Placing the wafer processed in the step (2) into an S2 cleaning solution for cleaning, wherein the S2 cleaning solution is a mixed solution of nitric acid and water, or the S2 cleaning solution is a mixed solution of hydrofluoric acid, hydrochloric acid and water;
(4) Placing the wafer processed in the step (3) into an S3 cleaning solution for cleaning, wherein the S3 cleaning solution is hydrogen peroxide solution;
(5) Placing the wafer treated in the step (4) into an S4 cleaning solution for cleaning treatment, wherein the S4 cleaning solution is phosphoric acid and/or sulfurous acid;
(6) And (5) drying the wafer treated in the step (5).
2. The cleaning process of claim 1, wherein in step (1), the hot concentrated sulfuric acid is treated: soaking for 1-10 s; the temperature is 60-90 ℃; the mass concentration of the sulfuric acid is 70-98%.
3. The cleaning process of claim 1, wherein in step (1), cold concentrated sulfuric acid is treated: soaking for 1-10 s; the temperature is 20-30 ℃; the mass concentration of the sulfuric acid is 70-98%.
4. The cleaning process according to claim 1, wherein in the step (2), the pH of the tetramethylammonium hydroxide solution in the S1 cleaning solution is not less than 12.5; the cleaning treatment temperature is 20-30 ℃; the cleaning treatment time is 20-40 s.
5. The cleaning process according to claim 1, wherein in the step (3), the volume ratio of nitric acid to water in the S2 cleaning solution is 1 to 2: 5-10; the mass concentration of nitric acid used for configuration is more than or equal to 69.0%; the cleaning treatment time is 30-60 s.
6. The cleaning process according to claim 1, wherein in the step (4), the mass concentration of hydrogen peroxide in the S3 cleaning solution is not less than 30.0%, and the cleaning treatment time is 30-90S.
7. The cleaning process according to claim 1, wherein in the step (5), the mass concentration of phosphoric acid in the S4 cleaning solution is not less than 85.0%, and the cleaning treatment time is 30-60S.
8. The cleaning process according to claim 1, wherein in the steps (2) to (5), the cleaning treatment temperature is 25 ℃ or lower.
9. The cleaning process according to claim 1, wherein in the steps (2) to (6), a clean water flushing treatment is provided between adjacent steps, and the flushing treatment is specifically as follows: and placing the wafer into a water bowl, and using a water gun to wash the water bowl to keep a water overflow state, wherein the overflow water amount is 10-50L/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311045996.3A CN117153667A (en) | 2023-08-18 | 2023-08-18 | Cleaning process of indium phosphide wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311045996.3A CN117153667A (en) | 2023-08-18 | 2023-08-18 | Cleaning process of indium phosphide wafer |
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| CN117153667A true CN117153667A (en) | 2023-12-01 |
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| CN202311045996.3A Pending CN117153667A (en) | 2023-08-18 | 2023-08-18 | Cleaning process of indium phosphide wafer |
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