CN108231541A - A kind of cleaning method of indium antimonide polishing chip - Google Patents
A kind of cleaning method of indium antimonide polishing chip Download PDFInfo
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- CN108231541A CN108231541A CN201810008754.XA CN201810008754A CN108231541A CN 108231541 A CN108231541 A CN 108231541A CN 201810008754 A CN201810008754 A CN 201810008754A CN 108231541 A CN108231541 A CN 108231541A
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- indium antimonide
- polishing
- cleaning
- chip
- wafer surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention relates to a kind of cleaning methods of indium antimonide polishing chip, belong to optoelectronic materials technology.The method of the invention is that indium antimonide polishing chip is impregnated or rinsed using 15 DEG C~25 DEG C of toluene, 50 DEG C~60 DEG C of toluene, acetone, ethyl alcohol, 50 DEG C~60 DEG C pure water solutions containing rich high-tensile strength liquid detergent and pure water successively, this method is avoided using ultrasonic cleaning, and it will not polish wafer surface with indium antimonide in cleaning process and chemically react, so as to avoid causing secondary destruction to indium antimonide polishing wafer surface, it can ensure the flatness of indium antimonide polishing wafer surface；Relative to the oxidant or corrosive agent of introducing, introduced rich high-tensile strength liquid detergent can simply be rinsed well by pure water, will not introduce new impurity.There is excellent flatness and cleannes using the indium antimonide polishing wafer surface of the method for the invention cleaning, disclosure satisfy that the requirement of the disposable polishing chip of high quality.
Description
Technical field
The present invention relates to a kind of cleaning methods of indium antimonide polishing chip, belong to optoelectronic materials technology.
Background technology
Indium antimonide is a kind of group Ⅲ-Ⅴ compound semiconductor material, it have that electron mobility is high, energy gap is small and
The unique semiconductor properties such as electron effective mass is small, thus infrared acquisition, large area infrared focal plane array detector with
And the fields such as hall device have important application value and prospect.With the continuous development of infrared detector of indium antimonide, pixel
It is several to be continuously increased and the continuous reduction of line width, it is also higher and higher to the quality requirement of indium antimonide wafer, particularly to antimony
The requirement of indium polishing wafer surface quality is more and more tighter.Due to the polishing particle of wafer surface, metal contamination, organic matter stain,
Natural oxidizing layer and surface roughness etc. can seriously affect performance, reliability, stability and the yield rate of device, therefore, antimony
The surface clean of indium polishing chip is just into a link vital in indium antimonide device production.
In wafer manufacture is polished, the techniques such as cutting, grinding and CPM (chemical-mechanical planarization) are needed largely using various
The chemicals such as bonded adhesives, abrasive material, coolant, buffing wax and polishing fluid inevitably carry out various be stained with to polishing wafer tape
It is dirty.In general, it is big can be divided into organic impurities contamination, particle contaminant and metal ion contamination three for the contamination of polishing wafer surface
Class.Wherein, the geometric properties and electrical characteristics of subsequent processing can be influenced when particle is adhered to polishing wafer surface；Organic impurities stains
Meeting forms organic film in polishing wafer surface, when causing metal ion contamination that can not remove, and polish chip as substrate
Epitaxial wafer surface can be caused hickie (wax and organic solvent be its important pollution sources) occur；Metal ion contamination can lead to P-N
The leakage current tied increases and minority carrier lifetime is reduced, so as to seriously affect the stability of device and reliability.Thus may be used
Know, the surface of the disposable polishing chip of high quality should have following element：It is stained with without particle, organic matter and metal ion on surface
It is dirty；Surface oxide layer allows for removing completely under high-temperature process, and polishes after wafer surface removes removing oxide layer and must put down
It is smooth uniform.
In order to effectively remove the particle of polishing wafer surface, it is necessary to understand granular absorption and the mechanism of removal.Particle
Absorption mainly has following four power：Electrostatic attraction, Van der Waals for (molecular force), chemical bond power and shaggy
Resistance.The cutting mechanisms of surface particles can be divided into four classes：Particle and contamination are directly dissolved in cleaning solution；Particle and it is stained with object elder generation quilt
It is re-dissolved in cleaning solution after oxidation；By cleaning solution etch polishing wafer surface, and particle is caused to be detached from polishing wafer surface；Make
Electrostatic repulsion forces are generated between polishing wafer surface and particle.Four kinds of cutting mechanisms some have plenty of using physical method
Chemical method, it is therefore an objective to be gradually reduced particle with polishing the contact area of chip, finally remove it.Physical method mainly includes
Contact surface clean and non-contact surface cleaning, non-contact surface cleaning including ultrasonic cleaning and megasonic cleaning, surpass again
Although sound cleaning can remove particle of most of absorption in polishing wafer surface, cleaning performance can not reach special neck
The rigors of domain application, and the particle fallen from polishing wafer surface can scratch polishing wafer surface in ultrasonic procedure.
Chemical method is mainly the following：First, oxidant and corrosive agent are acted on polishing wafer surface, make its generate oxide layer-
Corrosion-oxide layer-corrosion reaction, is so repeated, and particle and a part of metal ion for being attached to polishing wafer surface are miscellaneous
Matter will be fallen into corrosion layer in cleaning solution；Second is that it is oxidized to the metal for being attached to polishing wafer surface using strong oxidizer
Metal ion, and being dissolved in cleaning solution or adsorb in polishing wafer surface, then with harmless minor diameter cation (such as H from
Son) metal ion of the absorption in polishing wafer surface is substituted, it is allowed to be dissolved in cleaning solution.The oxidant added in chemical method
And corrosive agent can form new impurity, and corrosive agent is to polishing the corrosion process of wafer surface and uneven, it can be to polishing
Wafer surface causes secondary destruction, influences to polish the performance of chip.
Invention content
For the prior art to insufficient existing for polishing wafer cleaning, the purpose of the present invention is to provide a kind of throwings of indium antimonide
The cleaning method of light chip, this method are mainly removed using the warm water cleaning of the toluene solvant of heating and the specific cleaning agent of addition
Indium antimonide polishes the impurity of wafer surface, avoids using ultrasonic cleaning, and cleaning process will not polish chip table with indium antimonide
Face chemically reacts, and can ensure the flatness of indium antimonide polishing wafer surface, and the indium antimonide polishing chip after cleaning
It disclosure satisfy that the requirement of the disposable polishing chip of high quality.
The purpose of the present invention is what is be achieved through the following technical solutions.
A kind of cleaning method of indium antimonide polishing chip, the method step is as follows,
(1) indium antimonide polishing chip is immersed in 15 DEG C~25 DEG C of toluene, after impregnating 20h~for 24 hours, then indium antimonide is thrown
Light chip is transferred in 50 DEG C~60 DEG C of toluene, is continued to impregnate 20min~25min, be cleaned later with acetone by toluene two
The secondary indium antimonide polishing chip impregnated, removes the toluene of indium antimonide polishing wafer surface, then clean indium antimonide with ethyl alcohol and polish
Chip removes the acetone of indium antimonide polishing wafer surface；
(2) indium antimonide after ethyl alcohol cleans is rinsed with 50 DEG C~60 DEG C pure water solutions containing rich high-tensile strength liquid detergent to throw
Light chip, after rinsing 5min~8min, then the liquid detergent with more than pure water rinsing 10min removing indium antimonide polishing wafer surfaces,
It is dry, that is, complete the cleaning to indium antimonide polishing chip；
Wherein, volume fraction of the rich high-tensile strength liquid detergent in pure water solution is 2%~5%；Above-mentioned all operations are hundred
It is operated in grade ultra-clean chamber, and is carried out in draught cupboard using the operation of toluene soak indium antimonide polishing chip.
Advantageous effect：
Indium antimonide polishing chip is mainly immersed in the toluene solvant of specific temperature, and use by the method for the invention
The pure water solution containing rich high-tensile strength liquid detergent of specific temperature cleans indium antimonide polishing chip, is thrown so as to remove indium antimonide
The impurity of light wafer surface, and the indium antimonide polishing chip after cleaning disclosure satisfy that the requirement of the disposable polishing chip of high quality.This
Invention the method is avoided using ultrasonic cleaning, and cleaning process will not be anti-with indium antimonide polishing wafer surface generation chemistry
Should, so as to which cleaning process be avoided to cause secondary destruction to indium antimonide polishing wafer surface, it can ensure that indium antimonide polishes chip table
The flatness in face；Compared with the oxidant or corrosive agent of introducing, introduced liquid detergent can simply be rinsed by pure water
Totally, new impurity will not be introduced.There is excellent cleaning using the method for the invention treated indium antimonide polishing chip
Degree and flatness can significantly improve the performance of device prepared using indium antimonide polishing chip.
Specific embodiment
The present invention will be further described With reference to embodiment.
Embodiment 1
A kind of cleaning method of indium antimonide polishing chip, the method step is as follows,
(1) a thin layer long-staple cotton is put into culture dish bottom, indium antimonide polishing chip is put into culture dish, adds in first
Benzene at room temperature after (20 DEG C) immersions for 24 hours, replaces the toluene in culture dish, and make the toluene newly added in using heating water bath mode
Temperature is maintained at 60 DEG C, and continues immersion 20min in 60 DEG C of toluene；
(2) it will be transferred in the culture dish for containing acetone by the secondary indium antimonide polishing chip impregnated of toluene, at room temperature
10min is impregnated, to remove the toluene of indium antimonide polishing wafer surface；Wherein, the culture dish bottom for containing acetone is placed with a thin layer
Long-staple cotton；
(3) the indium antimonide polishing chip crossed by acetone soak is transferred in the culture dish for containing absolute ethyl alcohol, at room temperature
10min is impregnated, to remove the acetone of indium antimonide polishing wafer surface；Wherein, the culture dish bottom for containing absolute ethyl alcohol is placed with one
Thin layer long-staple cotton；
(4) rich high-tensile strength liquid detergent is added in 60 DEG C of pure water, be uniformly mixed, and with prepared 60 DEG C containing rich high
The pure water solution of power liquid detergent rinses the indium antimonide polishing chip crossed by soaked in absolute ethyl alcohol, after rinsing 6min, then uses pure water
15min is rinsed, that is, completes the cleaning to indium antimonide polishing chip；And it is dried up using high pure nitrogen (purity is more than 99.999%)
Indium antimonide into cleaning polishes chip, saves backup；
Wherein, volume fraction of the rich high-tensile strength liquid detergent in pure water solution is 3%；Above-mentioned steps (1)~step (4) is
It is operated between hundred-grade super-clean, and using the operation of toluene soak indium antimonide polishing chip is carried out in draught cupboard
's.
Wafer surface, amplification factor 100, under details in a play not acted out on stage, but told through dialogues are polished using the indium antimonide after metallographic microscope details in a play not acted out on stage, but told through dialogues observation cleaning
Bright spot is not observed, illustrates that the indium antimonide polishing wafer surface free from admixture after cleaning exists.
In conclusion the foregoing is merely a prefered embodiment of the invention, it is not intended to limit the scope of the present invention.
All within the spirits and principles of the present invention, any modification, equivalent replacement, improvement and so on should be included in the present invention's
Within protection domain.
Claims (2)
1. a kind of cleaning method of indium antimonide polishing chip, it is characterised in that：The method step is as follows,
(1) indium antimonide polishing chip is immersed in 15 DEG C~25 DEG C of toluene, after impregnating 20h~for 24 hours, then indium antimonide is polished brilliant
Piece is transferred in 50 DEG C~60 DEG C of toluene, is continued to impregnate 20min~25min, is cleaned antimony with acetone, ethyl alcohol successively again later
Indium polishes chip；
(2) it rinses the indium antimonide after ethyl alcohol cleans with 50 DEG C~60 DEG C pure water solutions containing rich high-tensile strength liquid detergent and polishes crystalline substance
Piece, it is dry after rinsing 5min~8min, then with more than pure water rinsing 10min, that is, complete the cleaning to indium antimonide polishing chip；
Wherein, it is operated during step (1) and step (2) are between hundred-grade super-clean.
2. a kind of cleaning method of indium antimonide polishing chip according to claim 1, it is characterised in that：Rich high-tensile strength liquid detergent
Volume fraction in pure water solution is 2%~5%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810008754.XA CN108231541B (en) | 2018-01-04 | 2018-01-04 | Method for cleaning indium antimonide polished wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810008754.XA CN108231541B (en) | 2018-01-04 | 2018-01-04 | Method for cleaning indium antimonide polished wafer |
Publications (2)
| Publication Number | Publication Date |
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| CN108231541A true CN108231541A (en) | 2018-06-29 |
| CN108231541B CN108231541B (en) | 2020-06-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810008754.XA Active CN108231541B (en) | 2018-01-04 | 2018-01-04 | Method for cleaning indium antimonide polished wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860025A (en) * | 2019-02-01 | 2019-06-07 | 天津中环领先材料技术有限公司 | Cleaning method for ground silicon wafer |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0394082A (en) * | 1989-06-12 | 1991-04-18 | Kao Corp | Detergent composition |
| CN1132239A (en) * | 1994-10-13 | 1996-10-02 | 花王株式会社 | Cleaning process and detergent used therefor |
| CN101912857A (en) * | 2010-07-21 | 2010-12-15 | 河北工业大学 | Surface cleaning method on indium antimonide wafer after alkaline chemical mechanical polishing |
| CN101974377A (en) * | 2010-11-10 | 2011-02-16 | 南通海迅天恒纳米科技有限公司 | LED gallium arsenide substrate dewaxing cleaning agent |
| CN104450280A (en) * | 2014-11-17 | 2015-03-25 | 如皋市大昌电子有限公司 | Cleaning liquid special for diode semiconductor |
| CN107068783A (en) * | 2016-11-25 | 2017-08-18 | 中国科学院上海技术物理研究所 | A kind of indium antimonide terahertz detector and preparation method |
-
2018
- 2018-01-04 CN CN201810008754.XA patent/CN108231541B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0394082A (en) * | 1989-06-12 | 1991-04-18 | Kao Corp | Detergent composition |
| CN1132239A (en) * | 1994-10-13 | 1996-10-02 | 花王株式会社 | Cleaning process and detergent used therefor |
| CN101912857A (en) * | 2010-07-21 | 2010-12-15 | 河北工业大学 | Surface cleaning method on indium antimonide wafer after alkaline chemical mechanical polishing |
| CN101974377A (en) * | 2010-11-10 | 2011-02-16 | 南通海迅天恒纳米科技有限公司 | LED gallium arsenide substrate dewaxing cleaning agent |
| CN104450280A (en) * | 2014-11-17 | 2015-03-25 | 如皋市大昌电子有限公司 | Cleaning liquid special for diode semiconductor |
| CN107068783A (en) * | 2016-11-25 | 2017-08-18 | 中国科学院上海技术物理研究所 | A kind of indium antimonide terahertz detector and preparation method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860025A (en) * | 2019-02-01 | 2019-06-07 | 天津中环领先材料技术有限公司 | Cleaning method for ground silicon wafer |
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| CN108231541B (en) | 2020-06-02 |
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Address after: 650223 201 building, 31 East teaching street, Kunming, Yunnan. Patentee after: Yunnan Kunwu Xinyue Photoelectric Technology Co., Ltd Address before: 650223 201 building, 31 East teaching street, Kunming, Yunnan. Patentee before: YUNNAN BEIFANG KUNWU PHOTOELECTRIC TECHNOLOGY DEVELOPMENT Co.,Ltd. |
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