CN101217101A - A method to rinse blots on surfaces of ceramics - Google Patents
A method to rinse blots on surfaces of ceramics Download PDFInfo
- Publication number
- CN101217101A CN101217101A CNA2007100632228A CN200710063222A CN101217101A CN 101217101 A CN101217101 A CN 101217101A CN A2007100632228 A CNA2007100632228 A CN A2007100632228A CN 200710063222 A CN200710063222 A CN 200710063222A CN 101217101 A CN101217101 A CN 101217101A
- Authority
- CN
- China
- Prior art keywords
- deionized water
- pottery
- minutes
- handles
- clean
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
The invention provides a method for removing the ceramic surface stains, the method firstly uses dust-free cloth to dip isopropanol to polish the ceramic surface till being colorless; the solution of NH4OH: H2O2: H2O which is equal to 1: 0.6 to 1.5 to 2 to 5 is used for soaking the ceramics after the flushing by deionized water; then the ceramics is arranged in the deionized water to carry out the ultrasonic cleaning, if the stains are not removed still, emery paper with 1500 to 2000 mesh is dipped with the solution of HCl: H2O2: H2O which is equal to 1: 2 to 4: 8 to 10 to carry out the grinding removal of the stains; finally, the deionized water is used for flushing, the N2 is used for drying, and the baking is carried out for 1.5 to 3 hours in an oven at 90 to 120 DEG C. The application of the method of the invention can effectively remove the ceramic surface pollutants, in particular to the surface stains on a ceramic part of semiconductor process equipment.
Description
Technical field
The present invention relates to a kind of method of cleaning ceramic, specifically a kind of method of clean ceramic surface stain.
Background technology
Pottery more and more is applied in the semi-conductor processing equipment widely with its superior performance, in the manufacture of semiconductor technology under strong chemical atmosphere and the isoionic corrosion, and as chemical vapour deposition (CVD), plasma etching, processing procedure of TFT or the like.Though picture is material sintering or spraying with the aluminium oxide to form pottery and has good stability, but under so strong chemical gas and plasma etching situation, some chemical reactions still can take place in ceramic surface, have polluted ceramic surface thereby generate some reactants.The pollutant of these generations can be unstable under the environment of technology, thereby can have influence on the result of technology, so essential effectively removal.
The method of existing cleaning ceramic is ceramic member is cleaned with acetone or isopropanol solvent and to be soaked with chemical liquids.This method can only be removed some particles that are easier to remove and reactive polymeric thing attached to the surface with the scouring of acetone or isopropyl alcohol, can not remove some stains, and soaks and can not effectively wipe out a blot with chemical liquids, but also may destroy its surface.Thereby and be easy to introduce some foreign ions and have influence on technical process.
Summary of the invention
The object of the present invention is to provide a kind of method of clean ceramic surface pollutant, this method except removing some particulate pollutants on surface, is also removed the lip-deep stain that conventional method is not removed effectively under the situation of not damaging ceramic surface.
The present invention combines the method that following precision is cleaned: the one, and the peeling off of physical property, as brush or ultrasonic waves for cleaning; The 2nd, dissolving breaks away from substance dissolves as the organic solvent that uses low surface tension; The 3rd, the surface corrosion of chemistry reaches removal as using chemical acid alkali liquid or oxidation liquid and pollutant reaction.
Specifically, cleaning method of the present invention comprises the steps:
A. dip in non-dust cloth and get the isopropyl alcohol ceramic surface, remove particle and other pollutants of easy removal;
B. will be advisable in 5～10 minutes through the pottery deionized water rinsing of processing of step A;
C. will put into NH through the part that step B handles
4OH: H
2O
2: H
2O=1: 0.6～1.5: soak in 2～5 the solution, be advisable in 20～30 minutes, preferably NH
4OH: H
2O
2: H
2O=1: 1: 2～5;
D. will clean in deionized water for ultrasonic through the pottery that step C handles, be advisable in 10～30 minutes, and clean with dishcloth or industrial scouring pad simultaneously, play effect, increase cleaning performance piece surface friction cleaning;
E. pottery deionized water rinsing that will be after D handles was advisable in 5～10 minutes, used N again
2Dry up, put into the baking oven finish-drying at last, test show toast in the baking oven of inserting 90～120 ℃ 1.5～3 hours can be with ceramic finish-drying, positions such as pottery inboard, hole, groove can both finish-drying.
Do not remove if the ceramic surface after step D handles still has a stain, then dip in and get HCl: H with 1500～2000 purpose emery papers
2O
2: H
2O=1: 2～4: 8～10 solution grinds removal to stain, can suitably add the wiping of a spot of TMAH assisted milling in the process, can be 2.0～3.5% TMAH, and rinse well with deionized water discontinuously, the attention time is unsuitable long, otherwise can damage ceramic surface.
The ceramic part that the inventive method is specially adapted in the semi-conductor processing equipment cleans.
Can remove the surface blot of the ceramic part in the ceramic surface pollutant, particularly semi-conductor processing equipment effectively by method of the present invention.
Embodiment
Following embodiment use with to the further specifying of the inventive method, but be not used for limiting the present invention.
This example is cleaned at ceramic part stain in the manufacture of semiconductor, and used reagent comprises: hydrogen peroxide (H
2O
2, electronics is pure), ammoniacal liquor (NH
4OH, electronics is pure), isopropyl alcohol (IPA analyzes pure), tetramethyl aqua ammonia (TMAH, electronics is pure); And deionized water, non-dust cloth, dishcloth, 1500,2000 order emery papers.
Cleaning program 1:
A. dip in non-dust cloth and get the isopropyl alcohol ceramic surface, carry out preliminary scrubbing;
B. will use deionized water rinsing 7 minutes through the pottery of processing of step A;
C. will put into NH through the part that step B handles
4OH: H
2O
2: H
2O=1: soaked 25 minutes in 1: 3 the solution;
D. will clean 20 minutes in deionized water for ultrasonic through the pottery that step C handles, and clean with dishcloth simultaneously;
E. dip in 1500 order emery papers and get HCl: H
2O
2: H
2O=1: 3: 9 solution grinds removal to the stain that does not eliminate, and can suitably add a spot of 2.38% TMAH assisted milling wiping in the process, and rinse well with deionized water discontinuously, and the attention time is unsuitable long, otherwise can damage ceramic surface.
F. the pottery after E handles is used deionized water rinsing 7 minutes, use N again
2Dry up, put in the baking oven and toasted 2 hours in 100 ℃.
Cleaning program 2:
A. dip in non-dust cloth and get the isopropyl alcohol ceramic surface, carry out preliminary scrubbing;
B. will use deionized water rinsing 5 minutes through the pottery of processing of step A;
C. will put into NH through the part that step B handles
4OH: H
2O
2: H
2O=1: soaked 20 minutes in 0.6: 2 the solution;
D. will clean 10 minutes in deionized water for ultrasonic through the pottery that step C handles, and clean with dishcloth simultaneously;
E. dip in 1500 order emery papers and get HCl: H
2O
2: H
2O=1: 2: 8 solution grinds removal to the stain that does not eliminate, and can suitably add a spot of 2.0% TMAH assisted milling wiping in the process, and rinse well with deionized water discontinuously, and the attention time is unsuitable long, otherwise can damage ceramic surface.
F. the pottery after E handles is used deionized water rinsing 10 minutes, use N again
2Dry up, put in the baking oven and toasted 3 hours in 90 ℃.
Cleaning program 3:
A. dip in non-dust cloth and get the isopropyl alcohol ceramic surface, carry out preliminary scrubbing;
B. will use deionized water rinsing 10 minutes through the pottery of processing of step A;
C. will put into NH through the part that step B handles
4OH: H
2O
2: H
2O=1: soaked 10 minutes in 1.5: 5 the solution;
D. will clean 10 minutes in deionized water for ultrasonic through the pottery that step C handles, and clean with dishcloth simultaneously;
E. the pottery after D handles is used deionized water rinsing 5 minutes, use N again
2Dry up, put in the baking oven and toasted 1.5 hours in 120 ℃.
With above-mentioned 3 kinds of schemes ceramic part is cleaned, part more easy to clean is all had good cleaning effect, also can clean effectively for the part that is difficult to clean, in cleaning course, the cleaning effect of scheme 1 produces effects best.
Claims (10)
1. the method for a clean ceramic surface stain, this method comprises the steps:
A. dip in non-dust cloth and get the isopropyl alcohol ceramic surface;
B. will be through the pottery deionized water rinsing of processing of step A;
C. will put into NH through the part that step B handles
4OH: H
2O
2: H
2O=1: 0.6～1.5: soak in 2～5 the solution;
D. will clean in deionized water for ultrasonic through the pottery that step C handles, and clean with dishcloth or industrial scouring pad simultaneously;
E. will use N then through the pottery deionized water rinsing after step D handles
2Dry up, put into baking oven again and dry;
2. the method for claim 1, it also comprises after step D handles, and dips in 1500～2000 purpose emery papers and gets HCl: H
2O
2: H
2O=1: 2～4: 8～10 solution grinds removal to stain, suitably adds a spot of 2.0～3.5% TMAH assisted milling wiping in the process, and rinses well with deionized water discontinuously, removes up to stain.
3. the method for claim 1 is characterized in that, NH among the step C
4OH: H
2O
2: H
2O=1: 1: 3.5.
4. the method for claim 1 is characterized in that, step e is being used N
2After drying up, the baking oven of putting into 90～120 ℃ toasted 1.5～3 hours.
5. method as claimed in claim 2 is characterized in that, adds a small amount of 2.38% TMAH in process of lapping.
6. the method for claim 1, wherein the time of step B flushing is 5～10 minutes.
7. the method for claim 1, wherein step C time of soaking is 20～30 minutes.
8. the method for claim 1, wherein step D time of cleaning is 10～30 minutes.
9. the method for claim 1, wherein the time of step e flushing is 5～10 minutes.
10. as the described method of claim 1～9, wherein said pottery is the ceramic part in the semi-conductor processing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100632228A CN101217101A (en) | 2007-01-04 | 2007-01-04 | A method to rinse blots on surfaces of ceramics |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100632228A CN101217101A (en) | 2007-01-04 | 2007-01-04 | A method to rinse blots on surfaces of ceramics |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101217101A true CN101217101A (en) | 2008-07-09 |
Family
ID=39623509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100632228A Pending CN101217101A (en) | 2007-01-04 | 2007-01-04 | A method to rinse blots on surfaces of ceramics |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101217101A (en) |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102153370A (en) * | 2010-12-21 | 2011-08-17 | 安徽华东光电技术研究所 | Process for purifying aluminium oxide ceramics |
| CN102166575A (en) * | 2010-12-21 | 2011-08-31 | 安徽华东光电技术研究所 | Cleaning process of beryllium oxide ceramic |
| CN102179390A (en) * | 2010-11-25 | 2011-09-14 | 西安北方捷瑞光电科技有限公司 | Method for cleaning ultra-smooth surface |
| CN102698987A (en) * | 2012-06-21 | 2012-10-03 | 潮州三环（集团）股份有限公司 | Surface dust automatic cleaner of ceramic seat body |
| CN103567185A (en) * | 2013-07-09 | 2014-02-12 | 昆山富凌灶具有限公司 | Technique for cleaning energy-saving furnace end |
| CN103934234A (en) * | 2014-04-11 | 2014-07-23 | 元亮科技有限公司 | Cleaning technology of polished wafer containing box |
| CN104195575A (en) * | 2014-08-27 | 2014-12-10 | 富乐德科技发展（天津）有限公司 | Cleaning method for removing TiN and Ti films attached to surface of metal part |
| CN107088552A (en) * | 2017-04-26 | 2017-08-25 | 上海申和热磁电子有限公司 | A kind of method that middle low temperature removes foreign atom inside precise ceramic component |
| CN107267956A (en) * | 2017-04-28 | 2017-10-20 | 华灿光电股份有限公司 | A kind of shower nozzle cleaning method |
| CN107282525A (en) * | 2017-06-30 | 2017-10-24 | 芜湖通潮精密机械股份有限公司 | Suitable for the cleaning of ceramic product |
| CN107384631A (en) * | 2017-07-29 | 2017-11-24 | 佛山戴氏化工原料有限公司 | A kind of porcelain rod cleaning agent and preparation method |
| CN109622500A (en) * | 2018-11-20 | 2019-04-16 | 贵州航天林泉电机有限公司 | A kind of protection of brushless motor stator fifth wheel palm oil and cleaning method |
| CN110841970A (en) * | 2018-08-20 | 2020-02-28 | 深圳仕上电子科技有限公司 | Cleaning method suitable for surface attachments of adsorbed parts |
| CN111334809A (en) * | 2020-03-13 | 2020-06-26 | 宁波江丰电子材料股份有限公司 | Method for cleaning silver evaporation material |
| CN112563111A (en) * | 2020-12-08 | 2021-03-26 | 富乐德科技发展（天津）有限公司 | Cleaning method for removing metal oxide deposited on ceramic surface |
| CN112934832A (en) * | 2021-04-19 | 2021-06-11 | 北京北方华创微电子装备有限公司 | Method for cleaning ceramic parts |
| CN113245279A (en) * | 2021-05-20 | 2021-08-13 | 北京北方华创微电子装备有限公司 | Method for cleaning ceramic parts |
| CN113414178A (en) * | 2021-06-29 | 2021-09-21 | 北京北方华创微电子装备有限公司 | Method for cleaning ceramic parts |
| CN113502197A (en) * | 2021-07-07 | 2021-10-15 | 江苏筑磊电子科技有限公司 | Method for treating surface of semiconductor equipment by mixture of isopropanol and solvent oil |
| CN113894112A (en) * | 2021-09-14 | 2022-01-07 | 先导薄膜材料有限公司 | Indium foil surface treatment method |
-
2007
- 2007-01-04 CN CNA2007100632228A patent/CN101217101A/en active Pending
Cited By (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102179390B (en) * | 2010-11-25 | 2013-05-08 | 西安北方捷瑞光电科技有限公司 | Method for cleaning ultra-smooth surface |
| CN102179390A (en) * | 2010-11-25 | 2011-09-14 | 西安北方捷瑞光电科技有限公司 | Method for cleaning ultra-smooth surface |
| CN102166575A (en) * | 2010-12-21 | 2011-08-31 | 安徽华东光电技术研究所 | Cleaning process of beryllium oxide ceramic |
| CN102153370A (en) * | 2010-12-21 | 2011-08-17 | 安徽华东光电技术研究所 | Process for purifying aluminium oxide ceramics |
| CN102166575B (en) * | 2010-12-21 | 2013-02-06 | 安徽华东光电技术研究所 | Cleaning process of beryllium oxide ceramic |
| CN102153370B (en) * | 2010-12-21 | 2013-04-24 | 安徽华东光电技术研究所 | Process for purifying aluminium oxide ceramics |
| CN102698987B (en) * | 2012-06-21 | 2014-04-23 | 潮州三环（集团）股份有限公司 | Surface dust automatic cleaner of ceramic seat body |
| CN102698987A (en) * | 2012-06-21 | 2012-10-03 | 潮州三环（集团）股份有限公司 | Surface dust automatic cleaner of ceramic seat body |
| CN103567185A (en) * | 2013-07-09 | 2014-02-12 | 昆山富凌灶具有限公司 | Technique for cleaning energy-saving furnace end |
| CN103934234A (en) * | 2014-04-11 | 2014-07-23 | 元亮科技有限公司 | Cleaning technology of polished wafer containing box |
| CN103934234B (en) * | 2014-04-11 | 2016-01-06 | 元亮科技有限公司 | A kind of cleaning of polished silicon wafer slide cassette |
| CN104195575A (en) * | 2014-08-27 | 2014-12-10 | 富乐德科技发展（天津）有限公司 | Cleaning method for removing TiN and Ti films attached to surface of metal part |
| CN107088552B (en) * | 2017-04-26 | 2019-05-31 | 上海申和热磁电子有限公司 | A kind of method of middle low temperature removal precise ceramic component inside foreign atom |
| CN107088552A (en) * | 2017-04-26 | 2017-08-25 | 上海申和热磁电子有限公司 | A kind of method that middle low temperature removes foreign atom inside precise ceramic component |
| CN107267956A (en) * | 2017-04-28 | 2017-10-20 | 华灿光电股份有限公司 | A kind of shower nozzle cleaning method |
| CN107267956B (en) * | 2017-04-28 | 2019-12-06 | 华灿光电股份有限公司 | Nozzle cleaning method |
| CN107282525A (en) * | 2017-06-30 | 2017-10-24 | 芜湖通潮精密机械股份有限公司 | Suitable for the cleaning of ceramic product |
| CN107282525B (en) * | 2017-06-30 | 2019-09-13 | 芜湖通潮精密机械股份有限公司 | Cleaning process suitable for ceramic product |
| CN107384631A (en) * | 2017-07-29 | 2017-11-24 | 佛山戴氏化工原料有限公司 | A kind of porcelain rod cleaning agent and preparation method |
| CN110841970A (en) * | 2018-08-20 | 2020-02-28 | 深圳仕上电子科技有限公司 | Cleaning method suitable for surface attachments of adsorbed parts |
| CN109622500A (en) * | 2018-11-20 | 2019-04-16 | 贵州航天林泉电机有限公司 | A kind of protection of brushless motor stator fifth wheel palm oil and cleaning method |
| CN111334809A (en) * | 2020-03-13 | 2020-06-26 | 宁波江丰电子材料股份有限公司 | Method for cleaning silver evaporation material |
| CN112563111A (en) * | 2020-12-08 | 2021-03-26 | 富乐德科技发展（天津）有限公司 | Cleaning method for removing metal oxide deposited on ceramic surface |
| CN112934832A (en) * | 2021-04-19 | 2021-06-11 | 北京北方华创微电子装备有限公司 | Method for cleaning ceramic parts |
| CN113245279A (en) * | 2021-05-20 | 2021-08-13 | 北京北方华创微电子装备有限公司 | Method for cleaning ceramic parts |
| CN113414178A (en) * | 2021-06-29 | 2021-09-21 | 北京北方华创微电子装备有限公司 | Method for cleaning ceramic parts |
| WO2023274009A1 (en) * | 2021-06-29 | 2023-01-05 | 北京北方华创微电子装备有限公司 | Method for cleaning ceramic part |
| CN113502197A (en) * | 2021-07-07 | 2021-10-15 | 江苏筑磊电子科技有限公司 | Method for treating surface of semiconductor equipment by mixture of isopropanol and solvent oil |
| CN113894112A (en) * | 2021-09-14 | 2022-01-07 | 先导薄膜材料有限公司 | Indium foil surface treatment method |
| CN113894112B (en) * | 2021-09-14 | 2023-05-30 | 先导薄膜材料有限公司 | Indium foil surface treatment method |
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