US8071480B2 - Method and apparatuses for removing polysilicon from semiconductor workpieces - Google Patents
Method and apparatuses for removing polysilicon from semiconductor workpieces Download PDFInfo
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- US8071480B2 US8071480B2 US12/818,019 US81801910A US8071480B2 US 8071480 B2 US8071480 B2 US 8071480B2 US 81801910 A US81801910 A US 81801910A US 8071480 B2 US8071480 B2 US 8071480B2
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- semiconductor workpiece
- polysilicon material
- polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
2Si+H2O→Si—H+Si—OH
Si+Si—OH+H2O→Si—H+OH—Si—OH
Si+OH—Si—OH+H2O→Si—H+Si—(OH)3
H2O2+Si—H→H2O+SiOH
Hydrogen peroxide can also react with surface silicon to form surface silicon oxide as follows:
2H2O2+Si→2H2O+SiO2
H2O+Si—OH→H3O++Si—O−
It is also believed that contaminants (e.g., abrasive particles) also typically have negatively charged surfaces in a basic solution. The negatively charged
Claims (19)
H2O+Si—OH→H3O++Si—O−.
H2O+Si—OH→H3O++Si—O−.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/818,019 US8071480B2 (en) | 2007-03-14 | 2010-06-17 | Method and apparatuses for removing polysilicon from semiconductor workpieces |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/686,079 US7754612B2 (en) | 2007-03-14 | 2007-03-14 | Methods and apparatuses for removing polysilicon from semiconductor workpieces |
US12/818,019 US8071480B2 (en) | 2007-03-14 | 2010-06-17 | Method and apparatuses for removing polysilicon from semiconductor workpieces |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US11/686,079 Continuation US7754612B2 (en) | 2007-03-14 | 2007-03-14 | Methods and apparatuses for removing polysilicon from semiconductor workpieces |
Publications (2)
Publication Number | Publication Date |
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US20100267239A1 US20100267239A1 (en) | 2010-10-21 |
US8071480B2 true US8071480B2 (en) | 2011-12-06 |
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Application Number | Title | Priority Date | Filing Date |
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US11/686,079 Active 2028-08-04 US7754612B2 (en) | 2007-03-14 | 2007-03-14 | Methods and apparatuses for removing polysilicon from semiconductor workpieces |
US12/818,019 Active US8071480B2 (en) | 2007-03-14 | 2010-06-17 | Method and apparatuses for removing polysilicon from semiconductor workpieces |
Family Applications Before (1)
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US11/686,079 Active 2028-08-04 US7754612B2 (en) | 2007-03-14 | 2007-03-14 | Methods and apparatuses for removing polysilicon from semiconductor workpieces |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6819027B2 (en) | 2002-03-04 | 2004-11-16 | Cepheid | Method and apparatus for controlling ultrasonic transducer |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7754612B2 (en) | 2007-03-14 | 2010-07-13 | Micron Technology, Inc. | Methods and apparatuses for removing polysilicon from semiconductor workpieces |
CN102152218A (en) * | 2010-12-30 | 2011-08-17 | 青岛嘉星晶电科技股份有限公司 | Wafer polishing device |
CN102229101A (en) * | 2011-06-28 | 2011-11-02 | 清华大学 | Chemically mechanical polishing method |
CN102248477A (en) * | 2011-07-21 | 2011-11-23 | 清华大学 | Chemical and mechanical polishing method |
CN102294643A (en) * | 2011-07-21 | 2011-12-28 | 清华大学 | Chemically mechanical polishing method |
CN102380817B (en) * | 2011-10-25 | 2015-09-09 | 上海华虹宏力半导体制造有限公司 | Prevent the method that yield of wafer edge device is low |
US10804370B2 (en) * | 2017-03-15 | 2020-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device, method, and tool of manufacture |
CN113528028A (en) * | 2021-08-23 | 2021-10-22 | 长鑫存储技术有限公司 | Chemical mechanical polishing solution, semiconductor structure and preparation method thereof |
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Also Published As
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US20100267239A1 (en) | 2010-10-21 |
US20080233749A1 (en) | 2008-09-25 |
US7754612B2 (en) | 2010-07-13 |
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