CN210862918U - Temperature sensing type terahertz detector based on phase change material - Google Patents
Temperature sensing type terahertz detector based on phase change material Download PDFInfo
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Abstract
The patent discloses a temperature sensing type terahertz detector based on phase change material, the detector comprises alumina substrate, indium antimonide sensitive unit, vanadium dioxide grating structure layer, half-wave antenna and device tube socket. According to the temperature-sensing terahertz detector prepared by the patent, on the basis of a traditional metal-semiconductor-metal structure, a vanadium dioxide grating structure layer is introduced, and the drastic change of the conductivity of the grating structure layer is caused by utilizing the phase change conversion characteristic of vanadium dioxide at the ambient temperature of 68 ℃, so that the field enhancement effect caused by local plasmon polaritons of the whole device is different, and the modulation purpose of terahertz wave detection is achieved; the fast and high-sensitivity response of a wide waveband of 0.01-3THz is realized, and meanwhile, a new function of sensing the environmental temperature is added. The method has very important significance for optimizing the structural design of the device and perfecting the function of the device, and plays an important role in the fields of science, technology and the like.
Description
Technical Field
The patent relates to terahertz photoelectric detector field, more specifically says, relates to a temperature sensing type terahertz detector based on phase change material.
Background
Terahertz waves are electromagnetic waves with wavelengths between microwave and infrared, the frequency range of the terahertz waves is 0.1-10THz, the terahertz waves have the characteristics of good directionality, strong penetrability, high safety and the like, and the terahertz waves are widely applied to the aspects of communication, medical diagnosis, environmental detection and the like at present. Because the power of the terahertz radiation source is generally low at present, and the demand for multifunctional integration of the detector is more and more strong, the development of a terahertz detector with higher sensitivity, high response rate and multiple functions has become one of the current research hotspots.
In recent years, the development of the metamaterial lays a foundation for researching a multifunctional modulation-type terahertz detector. By utilizing the environmental dependence of the physical properties of the electromagnetic metamaterial, relevant researchers have changed the equivalent optical constants of the material by utilizing the external electric field intensity, the optical field intensity, the temperature, the mechanical vibration and other modes, and the modulation of the amplitude, the frequency and the phase of the terahertz wave by the device is realized. The terahertz device is modulated by using temperature, so that the terahertz device is a very simple, convenient and feasible mode. Among many temperature-sensitive materials, vanadium dioxide is a metal oxide with phase transition property, the phase transition temperature of the vanadium dioxide is 68 ℃, and the vanadium dioxide is widely used in the field of intelligent temperature control at present. Below the phase transition temperature, the vanadium dioxide is in an insulating state and has lower conductivity; above the phase transition temperature, the vanadium dioxide is in a metal state, and the conductivity is increased by 4 orders of magnitude [1] relative to the insulation state; and the phase change is a reversible phase change. In 2012, Mengkun Liu et al [2] observed the effect of temperature change on the transmittance of the system by embedding vanadium dioxide material in the channel of the metal resonant structure and changing the resonant condition by using the temperature change. By utilizing the property of the phase change, vanadium dioxide is widely researched and applied in the fields of optical switches, optical storage and the like. However, at present, most of researches on terahertz devices based on phase change material modulation still only remain on the influence of temperature on a transflective curve in the aspect of optics, and the researches on terahertz detection devices are not directly involved.
In the aspect of terahertz detectors, the subject group of the applicant is based on the theory of local plasmon, and utilizes a metal-semiconductor-metal (MSM) structure to prepare indium antimonide materials [3 ]]The high-sensitivity room-temperature terahertz detection is realized, the response frequency is 37.5GHz, and the noise equivalent power is 1.5 x 10-13W/Hz0.5And the international leading level is achieved. In order to further develop a terahertz detector with higher sensitivity and high responsivity, the idea of the metamaterial also provides a new idea for people. After a periodic metal grating structure layer is introduced into a slit of a non-resonant structure (metal-semiconductor-metal structure), theoretical analysis and simulation calculation show that the field enhancement effect of the non-resonant structure with the metal grating is remarkably improved compared with the field enhancement effect of the non-resonant structure without the metal grating, and the aim of enhancing terahertz wave detection is further fulfilled. In addition, in another case, a very thin periodicity is introduced in the slits of a metal-semiconductor-metal (MSM) structureAfter the insulator grating structure layer is formed, the change of the field enhancement effect is not obvious, namely the detection effect of the detector is not greatly influenced, and the excellent performances of high sensitivity and high response rate of the traditional metal-semiconductor-metal (MSM) structure detector are still maintained.
To this end, we can introduce a specific periodic vanadium dioxide grating structure layer on a detector sensitive element (indium antimonide) of a metal-semiconductor-metal (MSM) structure: when the environmental temperature is below 68 ℃, the vanadium dioxide grating structure layer is equivalent to an insulator grating structure layer, the change of the field enhancement effect is not obvious, and the detector still keeps the excellent performance of high sensitivity and high response rate; when the environment temperature is above 68 ℃, the vanadium dioxide grating structure layer is equivalent to a metal grating structure layer, the field enhancement effect is obvious, and the detector has the effect of obviously enhancing the detection, so that the performance indexes of the device, such as the detection rate, the response rate and the like, are further improved.
According to the temperature-sensing terahertz detector prepared by the patent, the phase change conversion characteristic of vanadium dioxide at the ambient temperature of 68 ℃ is utilized to cause the severe change of the conductivity of the grating structure layer, so that the field enhancement effect caused by local plasmon of the whole device is different, and the purpose of modulating terahertz wave detection is achieved; the fast and high-sensitivity response of a wide waveband of 0.01-3THz is realized, and meanwhile, a new function of sensing the environmental temperature is added. The method has very important significance for optimizing the structural design of the device and perfecting the function of the device, and plays an important role in the fields of science, technology and the like.
Reference documents:
[1]W.Paul,The present position of theory and experiment forVO2.Mater.Res.Bull.8,691-702,1971
[2]M.Liu,H.Hwang,et al,Terahertz-field-induced insulator to metaltransition in vanadium dioxide metamaterial.Nature.487,345–348,2012
[3]J.Tong,et al,Surface plasmon induced direct detection of longwavelength photons.Nat.Commun.8,1660,2017
disclosure of Invention
The purpose of the patent is to disclose a structure of a temperature-sensing terahertz detector based on a phase-change material, and on the basis of a rapid and high-sensitivity room-temperature metal-semiconductor-metal (MSM) structure terahertz detector, a vanadium dioxide grating structure layer is introduced, so that the purpose of modulating terahertz wave detection can be achieved, and a new function of sensing the environment temperature by the detector is added.
The structure description of this patent's temperature sensing type terahertz detector based on phase change material is as follows: fig. 1, fig. 2 and fig. 3 are respectively an overall structure diagram of the detector, a top view of the detector without packaging a germanium single crystal hemispherical lens, and a partial enlarged view of a sensitive element part of the detector.
As shown in fig. 1, 2 and 3, a phase-change material-based temperature-sensitive terahertz detector includes: the device comprises an indium antimonide sensitive element 1, a vanadium dioxide grating structure layer 2, an aluminum oxide substrate 3, a resin gasket 4, an antenna electrode 5, a gold wire welding wire 6, a device pin 7, a germanium single crystal hemispherical lens 8 and a device tube seat 9. The device structure is described in detail as follows: an indium antimonide sensitive element 1 and a vanadium dioxide grating structure layer 2 are arranged above an alumina substrate 3 in sequence; the alumina substrate 3 is pasted on the device tube seat 9 through the resin gasket 4; antenna electrodes 5 are arranged on the surface of the aluminum oxide substrate 3 and on the left side and the right side of the indium antimonide sensitive element 1; the antenna electrode 5 is connected with the device pin 7 by a gold wire welding wire 6; the germanium single crystal hemispherical lens 8 is packaged in a clamping groove above the device tube seat 9.
As shown in fig. 1, the thickness of the vanadium dioxide grating structure layer 2 is 50nm, the period of the grating structure is 5um-10um, and the duty ratio is 0.5; the antenna electrode 5 is a half-wave antenna with the total length of 500um, the distance between the antennas is 50um-100um, the material is 30nm of a chromium film, and 300nm of a gold film.
The temperature sensing type terahertz detector based on the phase-change material is prepared as follows:
(1) sticking an indium antimonide material on an amorphous alumina substrate by using epoxy resin glue, and mechanically thinning to obtain an indium antimonide single crystal thin layer; then an etching process combining a dry method and a wet method is used for manufacturing the indium antimonide sensitive element table board;
(2) on the indium antimonide sensitive element table board, using photoetching technology, exposing, developing and baking to obtain a pattern of a grating structure with designed period and duty ratio;
(3) sputtering and depositing a vanadium metal film on the indium antimonide sensitive element table top in the step (2) in a pure argon environment by adopting a radio frequency magnetron sputtering growth method; removing the photoresist and cleaning the sample piece to obtain an indium antimonide sensitive element table top with a vanadium metal grating structure on the upper layer; then, forming an indium antimonide sensitive element table top with a vanadium dioxide grating structure on the upper layer in a high-purity oxygen environment by using a rapid thermal annealing method;
(4) manufacturing an antenna electrode of the device by using an alignment technology and a gold plating process;
(5) after mechanically scribing the detecting element part, sticking the detecting element part to the center of the base; connecting the antenna electrode with the device pin by using a welding wire in a spot welding mode to realize electrical conduction; and covering the germanium single crystal hemispherical lens to finish packaging.
The temperature-sensing terahertz detector based on the phase-change material realizes the fast and high-sensitivity response of a wide waveband of 0.01-3THz, and simultaneously increases a new function of sensing the ambient temperature. In addition, the device is simple in manufacturing process, is compatible with the existing semiconductor process, is easy to integrate a third-generation focal plane detector on a large scale, and can perform imaging detection on terahertz wave signals.
Drawings
Fig. 1 is an overall structural view of the detector of the present patent.
Fig. 2 is a top view of the detector without the germanium single crystal hemispherical lens encapsulated.
Fig. 3 is a partially enlarged view (side view) of a sensitive element part of the detector, and a single-period structure diagram of the sensitive element part is shown by a dashed frame.
Fig. 4 is a schematic diagram of a single-cycle structure of a sensitive element part of the detector of the embodiments 1-3 of the patent, wherein (a) is a schematic diagram of a single-cycle structure of a sensitive element part of the embodiment 1 of the patent; FIG. (b) is a schematic diagram of the single-cycle structure of the sensitive element part in example 2 of this patent; fig. (c) is a schematic diagram of a single-cycle structure of the sensing element part in example 3 of this patent.
Figure 5 is a graph of a simulation of the detector performance (field enhancement) of example 1 in the vanadium dioxide metallic and insulator states.
Figure 6 is a graph of a simulation of the detector performance (field enhancement) of example 2 in the vanadium dioxide metallic state and the insulator state.
Figure 7 is a graph of a simulation of the detector performance (field enhancement) of example 3 in the vanadium dioxide metallic and insulator states.
FIG. 8 is a flow chart of the manufacturing process of the detector of this patent.
Detailed Description
In order to make the objects, technical solutions and advantages of the present patent clearer, three detectors of examples 1 to 3 are designed, wherein fig. 4 is a schematic diagram of a single-cycle structure of a sensitive element part of a detector of examples 1 to 3 of the present patent, fig. 5 to 7 are simulation diagrams of performance (field enhancement) of detectors of examples 1 to 3 of the present patent, and fig. 8 is a flow chart of a manufacturing process of the detector of the present patent. The preparation method of the detector is realized by the following steps:
example 1:
1. selecting a (111) single-polished indium antimonide single-crystal material with no crystal orientation doping, adhering a single polished surface of an indium antimonide material sample on an amorphous alumina substrate 3 by using epoxy resin glue, mechanically thinning, thinning the thickness of the indium antimonide single-crystal to 10 microns, selecting a photoresist AZ 4330, carrying out photoresist exposure, development and baking and other photoetching processes to obtain a photoetching pattern, carrying out wet etching, preparing a corrosion solution according to the proportion of HF: HAC: H2O2 ═ 1:1:1 to obtain an indium antimonide table surface with the etching depth of about 8 microns, carrying out dry etching to remove the remaining 2-micron indium antimonide material layer, thus obtaining an indium antimonide sensitive element 1 table surface with the thickness of 10 microns and the size of 90-micron × 20 microns (with the length of × width), cleaning the sample piece by using acetone, alcohol and deionized water again, and drying by using nitrogen.
2. On the table top of the indium antimonide sensitive element 1, high temperature resistant photosensitive polyimide is selected, the rotating speed of a spin coater is set to be 500 revolutions per minute before the spin coater is set for 5 seconds, then the rotating speed is set to be 4000 revolutions per minute, and the spin coater time is set to be 30 seconds. After the photoresist is subjected to photoetching processes such as spin coating, exposure, development and baking, the designed pattern of the grating structure with the period of 5um and the duty ratio of 0.5 is obtained.
3. Sputtering and depositing a vanadium metal film by adopting a radio frequency magnetron sputtering growth method under a pure argon environment, setting the sputtering power to be 70W, and sputtering for about 10 minutes to obtain the vanadium metal film with the thickness of about 50 nm; removing the photoresist and cleaning the sample piece to obtain an indium antimonide sensitive element table top with a vanadium metal grating structure on the upper layer; and then, forming a vanadium dioxide grating structure layer 2 with the period of 5um and the duty ratio of 0.5 by using a rapid thermal annealing method in a high-purity oxygen environment.
4. Selecting photoresist AZ 4330 to carry out pattern photoetching, setting the rotating speed of a spin coater to be 500 revolutions per minute and 5 seconds, then switching to be 4000 revolutions per minute, and setting the spin coating time to be 30 seconds. And (5) carrying out pre-baking exposure and development to obtain a pattern of the half-wave antenna with the total length of 500um and the middle spacing of 50 um. Then, an electron beam evaporation process is used for plating a chromium film with the thickness of 30nm and a gold film with the thickness of 300 nm. Removing glue and floating gold by using acetone, cleaning the sample piece by using alcohol and deionized water, and drying by using nitrogen. An antenna electrode 5 is manufactured, wherein the total length of the antenna is 500um, and the distance between the antenna and the electrode is 50 um.
5. After mechanically scribing the detection element part, the detection element part is stuck to the center of a device tube seat 9 through a resin gasket 4; then, the antenna electrode 5 is connected with the device pin 7 by a gold wire welding wire 6 by adopting a spot welding technology to realize electrical conduction; and adhering a germanium single crystal hemispherical lens 8 above the device tube seat 9 to finish packaging.
Example 2:
1. selecting a (111) single-polished indium antimonide single-crystal material with no crystal orientation doping, adhering a single polished surface of an indium antimonide material sample on an amorphous alumina substrate 3 by using epoxy resin glue, mechanically thinning, thinning the thickness of the indium antimonide single-crystal to 10 microns, selecting a photoresist AZ 4330, carrying out photoresist exposure, development and baking and other photoetching processes to obtain a photoetching pattern, carrying out wet etching, preparing a corrosion solution according to the proportion of HF: HAC: H2O2 ═ 1:1:1 to obtain an indium antimonide table surface with the etching depth of about 8 microns, carrying out dry etching to remove the residual indium antimonide material layer of 2 microns, thus obtaining an indium antimonide sensitive element 1 table surface with the thickness of 10 microns and the size of 120 microns × 20 microns (with the length of × width), cleaning the sample piece by using acetone, alcohol and deionized water again, and drying by using nitrogen.
2. On the table top of the indium antimonide sensitive element 1, high temperature resistant photosensitive polyimide is selected, the rotating speed of a spin coater is set to be 500 revolutions per minute before the spin coater is set for 5 seconds, then the rotating speed is set to be 4000 revolutions per minute, and the spin coater time is set to be 30 seconds. After the photoresist is subjected to photoetching processes such as photoresist homogenizing, exposure, development and baking, the designed pattern of the grating structure with the period of 8um and the duty ratio of 0.5 is obtained.
3. Sputtering and depositing a vanadium metal film by adopting a radio frequency magnetron sputtering growth method under a pure argon environment, setting the sputtering power to be 70W, and sputtering for about 10 minutes to obtain the vanadium metal film with the thickness of about 50 nm; removing the photoresist and cleaning the sample piece to obtain an indium antimonide sensitive element table top with a vanadium metal grating structure on the upper layer; and then, forming a vanadium dioxide grating structure layer 2 with a period of 8um and a duty ratio of 0.5 by using a rapid thermal annealing method in a high-purity oxygen environment.
4. Selecting photoresist AZ 4330 to carry out pattern photoetching, setting the rotating speed of a spin coater to be 500 revolutions per minute and 5 seconds, then switching to be 4000 revolutions per minute, and setting the spin coating time to be 30 seconds. And (5) carrying out pre-baking exposure and development to obtain a pattern of the half-wave antenna with the total length of 500um and the middle spacing of 80 um. Then, an electron beam evaporation process is used for plating a chromium film with the thickness of 30nm and a gold film with the thickness of 300 nm. Removing glue and floating gold by using acetone, cleaning the sample piece by using alcohol and deionized water, and drying by using nitrogen. The antenna electrode 5 is manufactured, the total length of the antenna is 500um, and the distance is 80 um.
5. After mechanically scribing the detection element part, the detection element part is stuck to the center of a device tube seat 9 through a resin gasket 4; then, the antenna electrode 5 is connected with the device pin 7 by a gold wire welding wire 6 by adopting a spot welding technology to realize electrical conduction; and adhering a germanium single crystal hemispherical lens 8 above the device tube seat 9 to finish packaging.
Example 3:
1. selecting a (111) single-polished indium antimonide single-crystal material with no crystal orientation doping, adhering a single polished surface of an indium antimonide material sample on an amorphous alumina substrate 3 by using epoxy resin glue, mechanically thinning, thinning the thickness of the indium antimonide single-crystal to 10 microns, selecting a photoresist AZ 4330, carrying out photoresist exposure, development and baking and other photoetching processes to obtain a photoetching pattern, carrying out wet etching, preparing a corrosion solution according to the proportion of HF: HAC: H2O2 ═ 1:1:1 to obtain an indium antimonide table surface with the etching depth of about 8 microns, carrying out dry etching to remove the residual indium antimonide material layer of 2 microns, thus obtaining an indium antimonide sensitive element 1 table surface with the thickness of 10 microns and the size of 140 microns × 20 microns (with the length of × width), cleaning the sample piece by using acetone, alcohol and deionized water again, and drying by using nitrogen.
2. On the table top of the indium antimonide sensitive element 1, high temperature resistant photosensitive polyimide is selected, the rotating speed of a spin coater is set to be 500 revolutions per minute before the spin coater is set for 5 seconds, then the rotating speed is set to be 4000 revolutions per minute, and the spin coater time is set to be 30 seconds. After the photoresist is subjected to photoetching processes such as photoresist homogenizing, exposure, development and baking, the designed pattern of the grating structure with the period of 10um and the duty ratio of 0.5 is obtained.
3. Sputtering and depositing a vanadium metal film by adopting a radio frequency magnetron sputtering growth method under a pure argon environment, setting the sputtering power to be 70W, and sputtering for about 10 minutes to obtain the vanadium metal film with the thickness of about 50 nm; removing the photoresist and cleaning the sample piece to obtain an indium antimonide sensitive element table top with a vanadium metal grating structure on the upper layer; and then, forming a vanadium dioxide grating structure layer 2 with the period of 10um and the duty ratio of 0.5 by using a rapid thermal annealing method in a high-purity oxygen environment.
4. Selecting photoresist AZ 4330 to carry out pattern photoetching, setting the rotating speed of a spin coater to be 500 revolutions per minute and 5 seconds, then switching to be 4000 revolutions per minute, and setting the spin coating time to be 30 seconds. And (5) carrying out pre-baking exposure and development to obtain a pattern of the half-wave antenna with the total length of 500um and the middle spacing of 100 um. Then, an electron beam evaporation process is used for plating a chromium film with the thickness of 30nm and a gold film with the thickness of 300 nm. Removing glue and floating gold by using acetone, cleaning the sample piece by using alcohol and deionized water, and drying by using nitrogen. The antenna electrode 5 is manufactured, the total length of the antenna is 500um, and the distance is 100 um.
5. After mechanically scribing the detection element part, the detection element part is stuck to the center of a device tube seat 9 through a resin gasket 4; then, the antenna electrode 5 is connected with the device pin 7 by a gold wire welding wire 6 by adopting a spot welding technology to realize electrical conduction; and adhering a germanium single crystal hemispherical lens 8 above the device tube seat 9 to finish packaging.
The above-mentioned embodiments are further described in detail for the purpose of illustrating the invention, and it is to be understood that the above-mentioned embodiments are illustrative only and are not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that are within the spirit and principle of the invention are intended to be included within the scope of the invention.
Claims (3)
1. The utility model provides a temperature sensing type terahertz detector based on phase change material, includes indium antimonide sensitive element (1), vanadium dioxide grating structure layer (2), alumina substrate (3), resin gasket (4), antenna electrode (5), gold wire welding wire (6), device pin (7), germanium single crystal hemisphere lens (8), device tube socket (9), its characterized in that:
the terahertz detector has the following structure: an indium antimonide sensitive element (1) and a vanadium dioxide grating structure layer (2) are sequentially arranged above an aluminum oxide substrate (3); the alumina substrate (3) is pasted on the device tube seat (9) through a resin gasket (4); antenna electrodes (5) are arranged on the left side and the right side of the indium antimonide sensitive element (1) on the surface of the aluminum oxide substrate (3); the antenna electrode (5) is connected with the device pin (7) by a gold wire welding wire (6); the germanium single crystal hemispherical lens (8) is packaged in a clamping groove above the device tube seat (9).
2. The phase-change-material-based temperature-sensitive terahertz detector according to claim 1, characterized in that: the thickness of the vanadium dioxide grating structure layer (2) is 50nm, the period of the grating structure is 5um-10um, and the duty ratio is 0.5.
3. The phase-change-material-based temperature-sensitive terahertz detector according to claim 1, characterized in that: antenna electrode (5) be the half-wave antenna of total length 500um, the antenna interval is 50um-100um, the material is 30nm for the chromium film, golden film 300 nm.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110617882A (en) * | 2019-09-10 | 2019-12-27 | 中国科学院上海技术物理研究所 | Phase-change-material-based temperature-sensing terahertz detector and preparation method thereof |
| CN112097938A (en) * | 2020-09-17 | 2020-12-18 | 南京林业大学 | Passive wireless temperature sensor based on mechanical metamaterial structure |
| CN114361805A (en) * | 2022-01-04 | 2022-04-15 | 电子科技大学 | Terahertz metamaterial adjustable directional selector |
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2019
- 2019-09-10 CN CN201921494851.0U patent/CN210862918U/en not_active Withdrawn - After Issue
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110617882A (en) * | 2019-09-10 | 2019-12-27 | 中国科学院上海技术物理研究所 | Phase-change-material-based temperature-sensing terahertz detector and preparation method thereof |
| CN110617882B (en) * | 2019-09-10 | 2023-07-04 | 中国科学院上海技术物理研究所 | Temperature-sensing terahertz detector based on phase-change material and preparation method |
| CN112097938A (en) * | 2020-09-17 | 2020-12-18 | 南京林业大学 | Passive wireless temperature sensor based on mechanical metamaterial structure |
| CN114361805A (en) * | 2022-01-04 | 2022-04-15 | 电子科技大学 | Terahertz metamaterial adjustable directional selector |
| CN114361805B (en) * | 2022-01-04 | 2023-07-25 | 电子科技大学 | Terahertz metamaterial adjustable direction selector |
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