CN109742179A - A kind of photodetector and preparation method thereof based on stannic selenide/silicon heterogenous - Google Patents
A kind of photodetector and preparation method thereof based on stannic selenide/silicon heterogenous Download PDFInfo
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Abstract
The invention belongs to optical detector technology fields, and in particular to a kind of photodetector, the photodetector from top to bottom successively include electrode, SnSe film layer, Si single crystal substrates and metal In back electrode before metal In point electrode, metal Pd.SnSe film layer is prepared using magnetically controlled sputter method.Test result shows that prepared thin-film device shows good driving photodetection performance certainly, has steady performance.
Description
Technical field
The invention belongs to optical detector technology fields, and in particular to a kind of photodetector and preparation method thereof.
Background technique
Photodetector refers to a kind of electronic device that can convert light signals into electric signal, the army of being widely used in
The fields such as thing, bio-imaging, non-destructive testing, communication, environmental monitoring.But the most of photodetector reported at present needs electricity
Source driving, the application that this seriously inhibits photodetectors in real life.[Small, 2017,13 (45): 1701687] and
From driving photodetector response can not only be generated to incident light, additionally it is possible to incident light is absorbed for itself work, and energy is provided,
Therefore it from the development of driving photodetector is beneficial to that photodetector is promoted to turn to micromation, intelligence, energy-saving direction
Become.From the core cell for driving detecting technique first is that photodetection material, it is determined from driving photodetector
An important factor for energy and price.Therefore developing the novel photodetection material of driving certainly has extremely important scientific meaning and application
Value.
Silicon is a kind of common narrow gap semiconductor, and band gap is about 1.12 electron-volts, is visited suitable for photoelectricity is prepared
Survey device.Meanwhile silicon is widely used in optical detection field due to its integration and the advantage compatible with CMOS technology.Cause
This exploitation silicon substrate high-performance optical electric explorer has great importance.
Summary of the invention
The purpose of the present invention is to provide one kind to have the function of from driving photoresponse, and periodically good stannic selenide/silicon is different
Matter knot photodetector.
The present invention is to achieve the above object the technical problem to be solved is that, by magnetically controlled sputter method, in silicon single crystal base
Selenizing tin thin film is prepared on bottom；Stannic selenide/silicon heterogenous, light of the acquisition with excellent properties is prepared by magnetically controlled sputter method
Electric explorer.
Present invention technical solution used for the above purpose is, a kind of photoelectricity based on stannic selenide/silicon heterogenous
Detector, which is characterized in that it is layer structure, it is successively thin including electrode, SnSe before metal In point electrode, metal Pd from top to bottom
Film layer, Si single crystal substrates and metal In back electrode.
A kind of preparation method of the photodetector based on stannic selenide/silicon heterogenous, it is characterised in that the following steps are included:
(1) Si single crystal substrates are chosen, it is cleaned；
(2) to the Si single crystal substrates after the completion of cleaning with being dried with nitrogen；
(3) the dry Si single crystal substrates completed are put into vacuum chamber, under ar gas environment, using rf magnetron sputtering skill
Art deposits SnSe film layer on Si single crystal substrates surface using the argon ion bombardment SnSe target ionized out；The SnSe target
Purity is 99.9%, and the ar pressure maintains 1.0 Pascals constant, and target-substrate distance is 50 millimeters, and the depositing temperature of film is 25
Degree Celsius, thin film layer thickness is 60-100 nanometers；
(4) in the SnSe film side mask film covering piece of SnSe/Si hetero-junctions；The SnSe/Si that will be covered with exposure mask piece is heterogeneous
Knot is put into vacuum chamber；Using magnetically controlled DC sputtering technology, using the argon ion bombardment metal Pd target ionized out, in SnSe/Si
Electrode before the deposited metal Pd of hetero-junctions surface；The Pd target is Pd metallic target, and target purity is 99.9%；The ar pressure
Maintain 5.0 Pascals constant, target-substrate distance is 50 millimeters, and the depositing temperature of metal Pd film is 25 degrees Celsius, electrode before metal Pd
With a thickness of 10-30 nanometers；
(5) by the SiO at the SnSe/Si hetero-junctions back side2Layer is removed with physical method；
(6) compacting of metal In electrode is completed in electrode and Si single crystal substrates before metal Pd respectively, and draws Ni metal
Conducting wire completes the preparation of device.
Preferably, in step (1), the Si single crystal substrates are N-shaped Si single crystal substrates, having a size of 10 millimeters × 10 millimeters,
Resistivity is 1~3 ohmcm；Cleaning process is as follows: Si single crystal substrates are successively more in high absolute alcohol and acetone soln
Secondary ultrasonic cleaning, each scavenging period length are 240 seconds.
Preferably, in step (4), the mask sheet is with a thickness of 0.1 millimeter, having a size of 10 millimeters × 10 millimeters, aperture ruler
Very little is 5 millimeters × 5 millimeters.
Preferably, in step (5), the physical method is that file files division, and file is except with a thickness of 0.5 millimeter.
Preferably, in step (6), the metal electrode and conductor material are In and Cu respectively, and wherein the purity of In is
99.5%, metal In electrode size and thickness are respectively 1 millimeter × 1.5 millimeters and 1 millimeter, Si monocrystalline base on electrode before metal Pd
Metal In electrode size and thickness are respectively 10 millimeters × 10 millimeters and 2 millimeters on bottom, and Cu diameter of wire is 0.1 millimeter.
The above-mentioned device with photodetection ability can be applied in terms of preparing photodetector.
The method have the benefit that:
Invention is developed by depositing SnSe film on Si single crystal substrates surface with the film from driving optical detection ability
Device.Test result is shown: prepared thin-film device has apparent sensitive property to light, i.e., is 0 volt in operating voltage
When, device current dramatically increases under illumination condition.The device has many advantages, such as that the period is reproducible.With presently, there are self-powered
Dynamic photodetector compares, and the preparation method of device involved in the present invention is simple, nontoxic, low in cost, and has photoresponse
The advantages that performance is significant can be widely applied to field of photodetectors.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of prepared device photoelectric detection performance measurement.
Periodic response performance of the device to light when being 0 volt that Fig. 2 is applied voltage.
Specific embodiment
The present invention utilizes magnetically controlled sputter method, and SnSe film layer is deposited in Si single crystal substrates, it is heterogeneous to obtain SnSe/Si
Knot passes through electrode before magnetically controlled DC sputtering technology deposited metal Pd and pressed metal In electrode and connection plain conductor, shaper
Part.When being exposed under illumination condition, due to the presence of photoelectric effect and built in field, device can be 0 in applied voltage
Apparent response performance is shown to light when volt.
Below with reference to embodiment and attached drawing, the present invention is described in detail.
The present invention is a kind of photodetector based on stannic selenide/silicon heterogenous, including SnSe film layer and Si monocrystalline base
Bottom, carrier of the Si single crystal substrates as SnSe film layer, SnSe film layer are arranged on Si single crystal substrates surface.Si single crystal substrates are
N-shaped Si single crystal substrates, resistivity are 1~3 ohmcm, and crystalline orientation is (100) orientation.The SnSe film layer is to use
Radiofrequency magnetron sputtering technology preparation, with a thickness of 60~100 nanometers.
Further say, SnSe/Si hetero-junctions surface is also covered with mask sheet, mask sheet be located at SnSe film layer with
Before metal Pd between electrode, mask sheet is with a thickness of 0.1 millimeter, and having a size of 10 millimeters × 10 millimeters, aperture size is 5 millimeters × 5
Millimeter；Electrode is prepared using magnetically controlled DC sputtering technology before metal Pd, with a thickness of 10~30 nanometers.
Further, In electrode in pressed metal is distinguished before metal Pd on electrode and in Si single crystal substrates, and is drawn and led
Line obtains device.
The preparation method of above-mentioned device, specifically includes the following steps:
(1) Si single crystal substrates are chosen, it is cleaned；
(2) to the Si single crystal substrates after the completion of cleaning with being dried with nitrogen；
(3) the dry Si single crystal substrates completed are put into vacuum chamber, under ar gas environment, using rf magnetron sputtering skill
Art deposits SnSe film layer on Si single crystal substrates surface using the argon ion bombardment SnSe target ionized out；The SnSe target
Purity is 99.9%, and the ar pressure maintains 1.0 Pascals constant, and target-substrate distance is 50 millimeters, and the depositing temperature of film is 25
Degree Celsius, thin film layer thickness is 60-100 nanometers；
(4) in the SnSe film side mask film covering piece of SnSe/Si hetero-junctions；The SnSe/Si that will be covered with exposure mask piece is heterogeneous
Knot is put into vacuum chamber；Using magnetically controlled DC sputtering technology, using the argon ion bombardment metal Pd target ionized out, in SnSe/Si
Electrode before the deposited metal Pd of hetero-junctions surface；The Pd target is Pd metallic target, and target purity is 99.9%；The ar pressure
Maintain 5.0 Pascals constant, target-substrate distance is 50 millimeters, and the depositing temperature of metal Pd film is 25 degrees Celsius, electrode before metal Pd
With a thickness of 10-30 nanometers；
(5) by the SiO at the SnSe/Si hetero-junctions back side2Layer is removed with physical method；
(6) compacting of metal In electrode is completed in electrode and Si single crystal substrates before metal Pd respectively, and draws Ni metal
Conducting wire completes the preparation of device.
Effect of the invention is further illustrated below with reference to performance measurements:
Fig. 1 is the structural schematic diagram of prepared device photoelectric detection performance measurement.
Fig. 2 be under conditions of applied voltage is 0 volt device to the periodic response performance of light.Test voltage is 0 volt, is entered
A length of 900 nanometers of light wave are penetrated, optical power density is that 10 microwatts are every square centimeter.As shown, by change its locating for illumination
Environment, prepared thin-film device show good photo absorption property, have steady performance.These feature descriptions should
Thin-film device can be used to develop novel from driving light-detecting device.
Claims (7)
1. a kind of photodetector based on stannic selenide/silicon heterogenous, it is characterised in that: including metal In point electrode, metal Pd
Preceding electrode, SnSe film layer, Si single crystal substrates and metal In back electrode, SnSe film layer are arranged on Si single crystal substrates surface,
SnSe thin film layer thickness is 60-100 nanometers, and electrode is in SnSe thin-film surface, metal In point electrode and metal In before metal Pd
Back electrode suppresses electrode and Si single crystal substrates surface before metal Pd respectively.
2. a kind of photodetector based on stannic selenide/silicon heterogenous according to claim 1, it is characterised in that: described
Si single crystal substrates are N-shaped Si single crystal substrates, and resistivity is 1~3 ohmcm.
3. a kind of preparation method of the photodetector based on stannic selenide/silicon heterogenous, it is characterised in that the following steps are included:
(1) Si single crystal substrates are chosen, it is cleaned；
(2) to the Si single crystal substrates after the completion of cleaning with being dried with nitrogen；
(3) the dry Si single crystal substrates completed are put into vacuum chamber, under ar gas environment, using radiofrequency magnetron sputtering technology, benefit
The argon ion bombardment SnSe target that electricity consumption separates out deposits SnSe film layer on Si single crystal substrates surface；The SnSe target purity
It is 99.9%, the ar pressure maintains 1.0 Pascals constant, and target-substrate distance is 50 millimeters, and the depositing temperature of film is 25 Celsius
Degree, thin film layer thickness are 60-100 nanometers；
(4) in the SnSe film side mask film covering piece of SnSe/Si hetero-junctions；The SnSe/Si hetero-junctions that will be covered with exposure mask piece is put
Enter vacuum chamber；It is heterogeneous in SnSe/Si using the argon ion bombardment metal Pd target ionized out using magnetically controlled DC sputtering technology
Electrode before knot surface deposited metal Pd；The Pd target is Pd metallic target, and target purity is 99.9%；The ar pressure maintains
5.0 Pascals are constant, and target-substrate distance is 50 millimeters, and the depositing temperature of metal Pd film is 25 degrees Celsius, thickness of electrode before metal Pd
It is 10-30 nanometers；
(5) by the SiO at the SnSe/Si hetero-junctions back side2Layer is removed with physical method；
(6) compacting of metal In electrode is completed in electrode and Si single crystal substrates before metal Pd respectively, and draws Ni metal conducting wire,
Complete the preparation of device.
4. a kind of preparation method of photodetector based on stannic selenide/silicon heterogenous according to claim 3, feature
Be: in step (1), the Si single crystal substrates are having a size of 10 millimeters × 10 millimeters；Cleaning process is as follows: by Si single crystal substrates according to
The secondary cleaning of the repeated ultrasonic in high absolute alcohol and acetone soln, the time span cleaned every time are 240 seconds.
5. a kind of preparation method of photodetector based on stannic selenide/silicon heterogenous according to claim 3, feature
Be: in step (4), the mask sheet is with a thickness of 0.1 millimeter, having a size of 10 millimeters × 10 millimeters, aperture size is 5 millimeters ×
5 millimeters.
6. a kind of preparation method of photodetector based on stannic selenide/silicon heterogenous according to claim 3, feature
Be: in step (5), the physical method is that file files division, and file is except with a thickness of 0.5 millimeter.
7. a kind of preparation method of photodetector based on stannic selenide/silicon heterogenous according to claim 3, feature
Be: in step (6), the purity of the raw materials used In of metal In electrode is 99.5%, metal In electricity on electrode before metal Pd
Greatly small and thickness is respectively 1 millimeter × 1.5 millimeters and 1 millimeter, and metal In electrode size and thickness are divided equally in Si single crystal substrates
Wei not be 10 millimeters × 10 millimeters and 2 millimeters, Cu diameter of wire is 0.1 millimeter.
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Cited By (5)
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| CN113054055A (en) * | 2021-03-10 | 2021-06-29 | 中国石油大学(华东) | SnSe/SnO-based2Self-driven photoelectric detector of multilayer spherical shell/Si heterojunction and preparation method thereof |
| CN113066888A (en) * | 2021-03-15 | 2021-07-02 | 中国石油大学(华东) | In-based2S3Self-driven photoelectric detector of nanosheet array/Si pyramid array heterojunction |
| CN113675292A (en) * | 2021-07-09 | 2021-11-19 | 山东师范大学 | Heterojunction infrared photoelectric sensor and preparation method thereof |
| CN114300568A (en) * | 2021-10-22 | 2022-04-08 | 中国石油大学(华东) | SnSe nanorod array heterojunction device with room-temperature ultrafast infrared response and preparation method thereof |
| CN117393638A (en) * | 2023-08-04 | 2024-01-12 | 西安石油大学 | Photoelectric detector, preparation method and system thereof, and electronic equipment |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113054055A (en) * | 2021-03-10 | 2021-06-29 | 中国石油大学(华东) | SnSe/SnO-based2Self-driven photoelectric detector of multilayer spherical shell/Si heterojunction and preparation method thereof |
| CN113066888A (en) * | 2021-03-15 | 2021-07-02 | 中国石油大学(华东) | In-based2S3Self-driven photoelectric detector of nanosheet array/Si pyramid array heterojunction |
| CN113675292A (en) * | 2021-07-09 | 2021-11-19 | 山东师范大学 | Heterojunction infrared photoelectric sensor and preparation method thereof |
| CN113675292B (en) * | 2021-07-09 | 2024-06-21 | 山东师范大学 | Heterojunction infrared photoelectric sensor and preparation method thereof |
| CN114300568A (en) * | 2021-10-22 | 2022-04-08 | 中国石油大学(华东) | SnSe nanorod array heterojunction device with room-temperature ultrafast infrared response and preparation method thereof |
| CN114300568B (en) * | 2021-10-22 | 2024-03-26 | 中国石油大学(华东) | SnSe nano rod array heterojunction device with room temperature ultrafast infrared response and preparation method thereof |
| CN117393638A (en) * | 2023-08-04 | 2024-01-12 | 西安石油大学 | Photoelectric detector, preparation method and system thereof, and electronic equipment |
| CN117393638B (en) * | 2023-08-04 | 2024-08-16 | 西安石油大学 | Photoelectric detector, preparation method and system thereof, and electronic equipment |
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