CN114300568A - SnSe nanorod array heterojunction device with room-temperature ultrafast infrared response and preparation method thereof - Google Patents
SnSe nanorod array heterojunction device with room-temperature ultrafast infrared response and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a SnSe nanorod array heterojunction device with room-temperature ultrafast infrared response and a preparation method thereof. The method comprises the following steps: selecting a double-sided polished single crystal Si substrate; depositing a SnSe nanorod array thin film layer on the upper surface of the substrate by utilizing a magnetron sputtering technology; depositing a transparent electrode layer on the surface of the thin film layer and depositing a metal electrode layer on the lower surface of the substrate. Based on the principle of optical-thermal-electrical conversion enhanced by a heterogeneous interface existing in the device, the device has obvious response performance to infrared light at room temperature, and the response speed is ultrahigh. The infrared photoelectric detection device has the advantages of low energy consumption, high infrared responsivity and infrared detection rate, strong performance stability and the like; the preparation process is simple, the finished product rate is high, and the preparation method is nontoxic and pollution-free and is suitable for large-scale industrial production.
Description
Technical Field
The invention relates to a heterojunction device and a preparation method thereof, in particular to a SnSe nanorod array heterojunction photoelectric detector and a preparation method thereof, and belongs to the field of semiconductor optoelectronic devices.
Background
In recent years, with the development of infrared imaging technology, the development of photoelectric detectors with infrared response under non-refrigeration conditions has received wide attention from many researchers at home and abroad, mainly because: the infrared imaging device can recognize and monitor infrared signals at room temperature, effectively avoid a complex cooling device, remarkably improve the pixel unit and the integration density of the device, and greatly enhance the resolution and the accuracy of infrared imaging.
In the prior art, the uncooled infrared photoelectric detector mainly adopts heat-sensitive semiconductor materials such as vanadium dioxide and amorphous silicon, and the infrared response under the room temperature condition is realized by utilizing the heat radiation induction of the materials to infrared light. Due to the limitation of the heat conduction speed in the material, these devices have the problem and disadvantage of relatively long response time, generally from several seconds to several seconds, which results in relatively low infrared response speed of the devices and reduces the application range of the devices.
For example:
chinese patent 201510752224.2 discloses an active infrared camouflage structure based on vanadium dioxide, which is prepared by coating or evaporating a layer of vanadium dioxide film on the upper surface of a heating substrate, and adjusting the emissivity change of vanadium dioxide by changing the temperature of the substrate to realize infrared camouflage with low power consumption and rapid adjustment.
Chinese patent ZL201910257251.0 discloses a heat-sensitive film of an uncooled infrared detector and a preparation method thereof, and the method takes vanadium, titanium or vanadium-titanium as main doping binary or ternary metal oxide, thereby not only improving the temperature resistance of the film, but also improving the infrared sensitivity and temperature resistance of the heat-sensitive film by virtue of special metal doping.
The Chinese patent ZL201110392877.6 discloses a preparation method of a black silicon material-based uncooled thermal infrared detector, and the method adopts a mode of ion implantation of a chalcogenide element and ultrafast laser irradiation to dope the amorphous silicon film with the chalcogenide element to form the uncooled thermal infrared detector.
Due to the strong light absorption capacity, the SnSe material has attracted extensive attention in the aspect of developing high-efficiency photoelectric detector devices. However, limited by the band gap structure of the material, the SnSe photoelectric detection device can only respond to the visible light band.
For example:
the Chinese patent ZL201710805805.7 discloses a photothermal detector based on a single SnSe film, and the detection device utilizes the transverse thermoelectric effect in the film surface to realize the detection of light and heat.
The Chinese invention patent ZL201910141377.1 discloses a photoelectric detector of a Pd/SnSe/Si/In heterojunction and a preparation method thereof, wherein a compact continuous SnSe film is used for absorbing visible light to form an obvious visible light detection effect.
However, the above-disclosed photoelectric devices have a photoresponse function only for visible light, and cannot realize photoelectric detection in the infrared band.
How to design the structure of the SnSe material and develop the SnSe semiconductor material with infrared band response under the room temperature condition, and further on this basis, a novel high-efficient SnSe photoelectric detector is developed, which has become a technical problem to be solved urgently for technical personnel in the field of current semiconductor materials and devices.
Disclosure of Invention
One of the purposes of the invention is to provide an SnSe nanorod array heterojunction photoelectric detection device with an ultrafast infrared light response function.
The invention aims to solve the technical problems that how to improve the internal structure of the SnSe photoelectric detection device, break through the limitation of the semiconductor band gap of the SnSe material and expand the response wavelength range of the device to an infrared band; the method comprises the steps of preparing a SnSe nanorod array film, forming a SnSe/Si heterojunction device structure, forming unique light-heat-electricity conversion in a device, generating a temperature gradient in the device, changing the current of the device, forming the response performance of the device to incident light, and further enhancing the response performance by utilizing a heterogeneous interface effect, thereby realizing the ultra-fast detection of infrared band light by the device.
The technical scheme adopted by the invention for realizing the purpose is that the SnSe nanorod array heterojunction photoelectric detector with the ultrafast infrared light response function and the preparation method thereof are characterized in that the detector is of a layered structure and sequentially comprises a metal lower electrode layer, a single crystal Si semiconductor substrate, a SnSe nanorod array thin film layer and a transparent upper electrode layer from bottom to top, wherein:
the metal lower electrode layer is one of metals such as Al, Cu and Ag, is deposited on the lower surface of the substrate through direct-current magnetron sputtering, and has the thickness of 50-300 nm;
the single crystal Si semiconductor substrate is a single crystal with both polished upper and lower surfaces, has an N-type semiconductor of an electron conduction type, has a resistivity of 0.5 to 10.0. omega. cm, and has a thickness of 50 to 200 μm;
the SnSe nanorod array thin film layer is deposited on the surface of the substrate through direct-current magnetron sputtering, has (100) lattice orientation and has a thickness of 100-300 nm;
the transparent upper electrode layer is made of Indium Tin Oxide (ITO) thin film material and is deposited on the surface of the SnSe nanorod array thin film layer through direct current magnetron sputtering, and the thickness of the transparent upper electrode layer is 50-120 nm;
the technical effect that above-mentioned technical scheme directly brought is, starting from two aspects of material growth and structural feature, has formed the light-heat-electricity conversion that is different from traditional semiconductor material in the heterogeneous film of SnSe nanorod array, and this kind of conversion does not rely on the semiconductor band gap width of material for photoelectric detector has made breakthrough promotion in response wavelength range and response speed:
through detection, the light response waveband range of the SnSe nanorod array heterojunction photoelectric detector is expanded to an infrared waveband, particularly the response time of the SnSe nanorod array heterojunction photoelectric detector is greatly shortened, and the SnSe nanorod array heterojunction photoelectric detector shows ultrafast and sensitive infrared light detection capability.
When lambda is 1550nm, the response rate is 47.3V/W, and the detection degree is 5.2 × 109Jones, response time 11 μ s.
For a better understanding of the above technical solutions, a detailed description will now be made in principle:
1. the technical effect achieved by the use of the SnSe nanorod array layer has three aspects: (1) the high heat capacity value can enhance the light-heat conversion in the device; (2) the thermoelectric material has stronger thermoelectric performance, and can enhance thermoelectric conversion in a device; (3) the nano-rod array has the structural characteristics of inhibiting in-plane thermal diffusion, obviously enhancing the temperature gradient of the device in the out-of-plane direction and improving the temperature difference electric field.
2. In the above technical scheme, the metal layer of 50-300nm is used as the lower electrode, mainly for the following reasons: (1) the metal layers such as Al, Cu, Ag and the like have good electric conductivity and thermal conductivity, and can keep good electron collecting capacity and heat conducting capacity in an air environment; (2) the work function of the metals is similar to that of SnSe, ohmic contact can be formed between the metals and the SnSe thin film, and the carrier transport capacity is promoted.
3. In the above technical solution, the single crystal Si semiconductor is used as the substrate, mainly for the following reasons: (1) the processing technology of the Si material is mature, and the device is easy to realize large-scale production; (2) and a stronger interface built-in electric field is formed by superposition with SnSe, so that the carrier transport in the device is promoted, and the response speed of the device is improved.
4. In the technical scheme, the indium tin oxide ITO with the wavelength of 50-120nm is used as the upper electrode, and the main reasons are as follows: (1) the light transmittance is good, and the effect between infrared light and SnSe is enhanced; (2) the conductivity is good, and the carrier collection and transport capacity is enhanced.
Experiments prove that the SnSe nanorod array heterojunction photoelectric detection device has the advantages of infrared response, high response value, ultra-fast response speed, stable signals, good periodicity and the like.
The second purpose of the invention is to provide the preparation method of the SnSe nanorod array heterojunction photoelectric detection device with the ultrafast infrared light response function, which has the advantages of simple process, strong repeatability, high device yield, environmental friendliness, no pollution and suitability for large-scale industrial production.
The invention adopts the technical scheme that the preparation method of the SnSe nanorod array heterojunction photoelectric detector with the ultrafast infrared light response function is characterized by comprising the following steps of:
the first step, the pretreatment step of double-side polishing of a single crystal Si substrate:
sequentially and respectively placing a double-sided polished single crystal Si substrate in alcohol, acetone and deionized water for ultrasonic cleaning for 180 s;
taking out, and drying by dry nitrogen;
step two, depositing a metal lower electrode layer:
putting the Si semiconductor substrate which is rinsed by deionized water and dried by dry nitrogen into a tray, putting the tray into a vacuum chamber, pumping the vacuum chamber into a first high vacuum, adjusting the temperature of the Si substrate to a first temperature, adjusting the pressure of working argon to a first pressure, bombarding a metal target by ionized argon ions by adopting a direct-current magnetron sputtering method, and depositing a metal layer on the surface of the Si semiconductor substrate as a lower electrode layer under the condition of first sputtering power;
step three, the deposition step of the SnSe nanorod array thin film layer:
placing the substrate deposited with the metal lower electrode layer into a tray, placing the substrate without the metal layer with the surface facing outwards into a vacuum chamber, pumping the vacuum chamber into a second high vacuum, adjusting the temperature of the substrate to a second temperature, adjusting the pressure of argon to a second pressure, adopting a direct-current magnetron sputtering technology, bombarding an SnSe target by ionized argon ions, and depositing a SnSe nanorod array thin film layer on the surface of the Si substrate without the metal layer under the condition of a second sputtering power;
step four, depositing the transparent upper electrode layer:
and opening the vacuum chamber, and replacing the sputtering target with an Indium Tin Oxide (ITO) target. Then, the vacuum chamber is closed and the vacuum chamber is evacuated to a third high vacuum. And adjusting the temperature of the sample on which the lower metal electrode layer and the SnSe nanorod array film are deposited to a third temperature, adjusting the argon pressure to a third pressure, bombarding an Indium Tin Oxide (ITO) target by ionized argon ions under the condition of a third sputtering power by adopting a direct-current magnetron sputtering technology, and depositing a transparent Indium Tin Oxide (ITO) electrode layer on the surface of the SnSe nanorod array film to serve as an upper electrode layer to obtain the indium tin oxide film.
3. The method for preparing the SnSe nanorod array heterojunction device with the room-temperature ultrafast infrared response as claimed in claim 2, wherein the purity of the argon gas is above 99.999%;
the high-purity nitrogen gas is dry nitrogen gas with the purity of more than 99.5 percent;
the metal target is Ag, Cu or Al target with the purity of more than 99.9%;
the SnSe target is a ceramic target with the purity of 99.9 percent;
the Indium Tin Oxide (ITO) target material is a ceramic target material with the purity of 99.99 percent.
4. The method for preparing the SnSe nanorod array heterojunction device with room temperature ultrafast infrared response as claimed in claim 2, wherein the first temperature is 20-25 ℃, and the first high vacuum is 2 x 10-4-3×10-4Pa, the first pressure is 0.3-0.5 Pa, and the first sputtering power is 20-80 mW.
5. The method for preparing the SnSe nanorod array heterojunction device with ultra-fast infrared response at room temperature according to claim 2, wherein the second high vacuum is 3 x 10-4-5×10-4Pa, the second pressure is 1.0-3.0 Pa, the second temperature is 300-600 ℃, and the second sputtering power is 20-80 mW;
6. root of herbaceous plantThe method for preparing the SnSe nanorod array heterojunction device with ultra-fast infrared response at room temperature according to claim 2, wherein the third high vacuum is 5 x 10-4-8×10-4Pa, the third pressure is 1.0-5.0 Pa, the third temperature is 200-300 ℃, and the third sputtering power is 20-80 mW;
preferably, the purity of the argon is 99.999%;
the nitrogen is dry nitrogen with the purity of 99.5 percent;
the purity of the metal target material is 99.9%;
the purity of the SnSe target material is 99.9 percent;
the Indium Tin Oxide (ITO) target material is a ceramic target material with the purity of 99.99 percent.
The technical effect directly brought by the optimized technical scheme is that the purity of the raw material can meet the purity of each layer of material in the obtained device, and the low cost of device processing can be ensured;
more preferably, the first temperature is 25 ℃ and the first high vacuum is 4X 10-4Pa, the first pressure is 0.5Pa, and the first sputtering power is 30 mW.
The optimized technical scheme has the direct technical effects that the lower electrode layer of the metal is not oxidized by residual gas and the purity is improved, and the requirement that metal ions have enough adhesive force in the film forming process on the surface of the substrate can be met;
more preferably, the second temperature is 450 ℃, and the second high vacuum is 5X 10-4Pa, the second pressure is 1.0Pa, and the second sputtering power is 10 mW.
The technical effect that this preferred technical scheme directly brought is, can further improve the quality of SnSe nanorod array film, can avoid the nanorod array film again by high temperature oxidation.
More preferably, the third temperature is 200 ℃ and the third high vacuum is 6X 10-4Pa, the pressure of the third gas is 2.0Pa, and the third sputtering power is 60 mW.
The technical effect directly brought by the optimized technical scheme is that the good conductivity of the Indium Tin Oxide (ITO) layer can be further improved, and the sufficient light transmittance of the Indium Tin Oxide (ITO) layer can be ensured.
The technical effect directly brought by the technical scheme is that the process is simple, the repeatability is strong, the device yield is high, the method is suitable for large-scale industrial production, and the whole process flow of the preparation method is green and environment-friendly, has no pollution, is free from toxic and harmful raw materials, and is free from toxic and harmful waste generation and waste gas emission.
In summary, compared with the prior art, the invention has the following beneficial effects:
1. the SnSe nanorod array heterojunction photoelectric detection device has infrared response property at room temperature, high response value, stable signal, good periodicity and ultrahigh response speed, and can be used for uncooled infrared detection.
The SnSe nanorod array heterojunction photoelectric detection device has the advantages that under the room temperature condition, when the wavelength lambda of incident light is 1550nm, the response rate is 47.3V/W, and the detection degree is 5.2 multiplied by 109Jones, response time 11 μ s.
2. The preparation method of the SnSe nanorod array heterojunction photoelectric detector has the characteristics of simple process method, convenient control of process parameters, suitability for large-scale industrial production, low manufacturing cost, high yield, stable product quality and the like.
Drawings
FIG. 1 is a schematic view of the structure of a heterojunction photodetector device of Si-SnSe nanorod array prepared in example 1;
FIG. 2 is a structural view of SEM cross section and a structural view of surface of a heterojunction of Si-SnSe nanorod array prepared in example 1;
FIG. 3 is an X-ray diffraction pattern of the Si-SnSe nanorod array heterojunction prepared in example 1;
FIG. 4 is a dynamic response curve of the heterojunction photodetector device of Si-SnSe nanorod array prepared in example 1;
FIG. 5 is a response curve of the heterojunction photoelectric detection device of the Si-SnSe nanorod array prepared in example 1 under different illumination powers;
FIG. 6 is a response time curve of the heterojunction photodetector device of Si-SnSe nanorod array prepared in example 1;
FIG. 7 is a graph showing the relationship between the photoresponse and the detectivity of the heterojunction photoelectric detector of Si-SnSe nanorod array prepared in example 1 and the incident illumination power.
Detailed Description
The present invention will be described in detail below with reference to examples and the accompanying drawings.
Example 1
(1) Selecting a double-sided polished monocrystalline Si semiconductor substrate;
(2) and ultrasonic cleaning is carried out for 180s in alcohol, acetone and deionized water in sequence. Taking out, and drying by dry nitrogen;
(3) loading the cleaned Si substrate into a tray and putting the tray into a vacuum cavity;
(4) the vacuum degree of the vacuum chamber is pumped to 3X 10 by a vacuum pump-4Pa, maintaining the temperature of the Si substrate at a first temperature of 20 ℃;
(5) adjusting the pressure of working argon to 0.5Pa, adopting a direct-current magnetron sputtering method, bombarding a metal Al target material by ionized argon ions, and depositing a metal Al layer on the surface of a Si substrate as a lower electrode layer under the condition that the first sputtering power is 10W;
(6) putting the substrate deposited with the Al electrode layer into a tray, and putting the substrate without the metal layer into a vacuum chamber again, wherein the surface of the substrate faces outwards;
(7) the vacuum degree of the vacuum cavity is pumped to 5 multiplied by 10-4Pa, adjusting the temperature of the substrate to 450 ℃ and the argon pressure to 1.0Pa, adopting a direct-current magnetron sputtering technology, bombarding the SnSe target by ionized argon ions, and depositing a SnSe nanorod array thin film layer on the surface of the Si substrate without the metal layer under the condition that the second sputtering power is 30W;
(8) opening the vacuum cavity, and replacing the sputtering target with an Indium Tin Oxide (ITO) target;
(9) closing the vacuum chamber, and vacuumizing the vacuum chamber to 1 × 10-3Pa. Adjusting the temperature of the sample on which the lower metal electrode layer and the SnSe nanorod array film are deposited toAnd adjusting the third temperature to 200 ℃ and the argon pressure to 3Pa, bombarding an Indium Tin Oxide (ITO) target by ionized argon ions by adopting a direct-current magnetron sputtering technology under the condition that the third sputtering power is 20W, and depositing a transparent Indium Tin Oxide (ITO) electrode layer on the surface of the SnSe nanorod array thin film layer to serve as an upper electrode layer to obtain the nano-structure Indium Tin Oxide (ITO) nano-film.
Through detection, the prepared SnSe nanorod array heterojunction device has a photo-thermoelectric effect mechanism, so that the device can generate obvious response performance to incident light with the wavelength of 1550 nm: the responsivity can reach 48.5V/W, and the response time is 11 mus.
Example 2
The second temperature of the substrate in example 1 was set to 100 ℃;
the rest is the same as in example 1.
Through detection, the response of the prepared SnSe heterojunction device to 1550nm wavelength infrared light is weak: the responsivity was 0.3V/W and the response time was 203. mu.s.
Example 3
The second temperature of the substrate in example 1 was set to 200 ℃;
the rest is the same as in example 1.
Through detection, the response of the prepared SnSe heterojunction device to infrared light with the wavelength of 1550nm is weak: the responsivity was 1.8V/W and the response time was 158. mu.s.
Example 4
The second temperature of the substrate in example 1 was set to 300 ℃;
the rest is the same as in example 1.
Through detection, the prepared SnSe heterojunction device has obvious response to infrared light with the wavelength of 1550 nm: the responsivity was 4.1V/W and the response time was 103. mu.s.
Example 5
The second temperature of the substrate in example 1 was set to 500 ℃;
the rest is the same as in example 1.
Through detection, the prepared SnSe heterojunction device has obvious response to infrared light with the wavelength of 1550 nm: the responsivity was 31.1V/W and the response time was 23. mu.s.
Example 6
The second sputtering power of the substrate in the example 1 is set to 10W;
the rest is the same as in example 1.
Through detection, the prepared SnSe heterojunction device has obvious response to infrared light with the wavelength of 1550 nm: the responsivity was 27.5V/W and the response time was 21. mu.s.
Example 7
The second sputtering power of the substrate in the example 1 is set to 20W;
the rest is the same as in example 1.
Through detection, the prepared SnSe heterojunction device has obvious response to infrared light with the wavelength of 1550 nm: the responsivity was 33.3V/W and the response time was 18. mu.s.
Comparing examples 1-7, we can conclude that:
the deposition temperature and the sputtering power of the SnSe material are increased, the crystallization quality of the SnSe nanorod is effectively improved, the light-heat-electricity conversion capability in a device is enhanced, and the ultra-fast infrared light detection performance is generated at room temperature.
The resulting SnSe heterojunction device was examined and analyzed, taking example 1 as a representative example, and the results are shown in fig. 1 to 7.
The following detailed description of the detection results is provided with reference to the accompanying drawings:
FIG. 1 is a schematic view of the structure of the prepared SnSe nanorod array heterojunction device.
As shown in the figure, the SnSe nanorod array layer is arranged on the surface of the Si substrate, the upper electrode layer is an ITO thin film, the lower electrode layer is a metal Al layer, and infrared light enters the device from the upper electrode layer in an incident mode.
FIG. 2 is a cross-sectional view and a surface view of a scanning electron microscope of the SnSe nanorod array manufactured in example 1.
As shown in the figure, the SnSe nanorod array structure is clear and visible, the length of the nanorods is about 350nm, the diameter of the nanorods is 30-80nm, and the nanorods have obvious interfaces;
FIG. 3 is an X-ray diffraction pattern of the SnSe nanorod array prepared in example 1.
As shown, the sharp X-ray diffraction peaks indicate that the SnSe nanorod array structure has good crystalline quality, and the (200), (400), (600), and (800) diffraction peaks indicate that the out-of-plane lattice orientation of SnSe is (100) orientation.
FIG. 4 is a graph showing the dynamic response of the SnSe nanorod array heterojunction device prepared in example 1 to infrared light with a wavelength of 1550 nm.
As shown in the figure, under the irradiation of 1550nm infrared light period, the obtained SnSe nanorod array heterojunction device shows stable four-stage response characteristics, which are caused by the photoelectric effect inside the device;
FIG. 5 is a graph showing the dynamic response of the SnSe nanorod array heterojunction device prepared in example 1 to infrared light with different intensities and 1550nm wavelengths.
As shown in the figure, the device shows obvious response characteristics to infrared illumination conditions with different intensities, even under the condition of 5 muW weak light, and the response state is stable without obvious attenuation characteristics;
FIG. 6 is a single-cycle dynamic response curve of the SnSe nanorod array heterojunction device prepared in example 1 to infrared light with a wavelength of 1550 nm.
As shown in the figure, the device has an ultra-fast response speed to infrared light, and the response time is only 11 mus.
FIG. 7 is a graph showing the relationship between the photoresponse and detectivity of infrared light having a wavelength of 1550nm and the intensity of incident light for the SnSe nanorod array heterojunction device prepared in example 1.
As shown in the figure, the responsivity and detectivity of the device to infrared light are gradually increased along with the decrease of the incident light intensity, and the maximum respectively reaches 48.5V/W and 5.4 multiplied by 109Jones。
Claims (6)
1. The SnSe nanorod array heterojunction device with the room-temperature ultrafast infrared response and the preparation method thereof are characterized in that the device is of a layered structure and sequentially comprises a metal lower electrode layer, a monocrystalline Si semiconductor substrate, a SnSe nanorod array thin film layer and a transparent upper electrode layer from bottom to top, wherein:
the metal lower electrode layer is one of metals such as Al, Cu and Ag, is deposited on the lower surface of the substrate through direct-current magnetron sputtering, and has the thickness of 50-300 nm;
the single crystal Si semiconductor substrate is a single crystal with both polished upper and lower surfaces, has an N-type semiconductor of an electron conduction type, has a resistivity of 0.5 to 10.0. omega. cm, and has a thickness of 50 to 200 μm;
the SnSe nanorod array thin film layer is deposited on the surface of the substrate through direct-current magnetron sputtering, has (100) lattice orientation and has a thickness of 100-300 nm;
the transparent upper electrode layer is made of Indium Tin Oxide (ITO) thin film material and is deposited on the surface of the SnSe nanorod array thin film layer through direct current magnetron sputtering, and the thickness of the transparent upper electrode layer is 50-120 nm.
2. A method for preparing the SnSe nanorod array heterojunction device with ultra-fast infrared response at room temperature according to claim 1, comprising the following steps:
the first step, the pretreatment step of double-side polishing of a single crystal Si semiconductor substrate:
sequentially and respectively placing a double-sided polished single crystal Si semiconductor substrate in alcohol, acetone and deionized water for ultrasonic cleaning for 180 s;
taking out, and drying by dry nitrogen;
step two, depositing a metal lower electrode layer:
putting the Si semiconductor substrate which is rinsed by deionized water and dried by dry nitrogen into a tray, putting the tray into a vacuum chamber, pumping the vacuum chamber into a first high vacuum, adjusting the temperature of the Si substrate to a first temperature, adjusting the pressure of working argon to a first pressure, bombarding a metal target by ionized argon ions by adopting a direct-current magnetron sputtering method, and depositing a metal layer on the surface of the Si semiconductor substrate as a lower electrode layer under the condition of first sputtering power;
step three, the deposition step of the SnSe nanorod array thin film layer:
placing the substrate deposited with the metal lower electrode layer into a tray, placing the substrate without the metal layer with the surface facing outwards into a vacuum chamber, pumping the vacuum chamber into a second high vacuum, adjusting the temperature of the substrate to a second temperature, adjusting the pressure of argon to a second pressure, adopting a direct-current magnetron sputtering technology, bombarding an SnSe target by ionized argon ions, and depositing a SnSe nanorod array thin film layer on the surface of the Si substrate without the metal layer under the condition of a second sputtering power;
step four, depositing the transparent upper electrode layer:
and opening the vacuum chamber, and replacing the sputtering target with an Indium Tin Oxide (ITO) target. Then, the vacuum chamber is closed and the vacuum chamber is evacuated to a third high vacuum. And adjusting the temperature of the sample on which the lower metal electrode layer and the SnSe nanorod array film are deposited to a third temperature, adjusting the argon pressure to a third pressure, bombarding an Indium Tin Oxide (ITO) target by ionized argon ions under the condition of a third sputtering power by adopting a direct-current magnetron sputtering technology, and depositing a transparent Indium Tin Oxide (ITO) electrode layer on the surface of the SnSe nanorod array film to serve as an upper electrode layer to obtain the indium tin oxide film.
3. The method for preparing the SnSe nanorod array heterojunction device with the room-temperature ultrafast infrared response as claimed in claim 2, wherein the purity of the argon gas is above 99.999%;
the high-purity nitrogen gas is dry nitrogen gas with the purity of more than 99.5 percent;
the metal target is Ag, Cu or Al target with the purity of more than 99.9%;
the SnSe target is a ceramic target with the purity of 99.9 percent;
the Indium Tin Oxide (ITO) target material is a ceramic target material with the purity of 99.99 percent.
4. The method for preparing the SnSe nanorod array heterojunction device with room temperature ultrafast infrared response as claimed in claim 2, wherein the first temperature is 20-25 ℃, and the first high vacuum is 2 x 10-4-3×10-4Pa, and the first pressure is 0.3-0.5 Pa.
5. The SnSe nano-meter with room temperature ultrafast infrared response of claim 2The preparation method of the rod array heterojunction device is characterized in that the second high vacuum is 3 x 10-4-5×10-4Pa, the second pressure is 1.0-3.0 Pa, and the second temperature is 300-600 ℃.
6. The method for preparing the SnSe nanorod array heterojunction device with ultra-fast infrared response at room temperature according to claim 2, wherein the third high vacuum is 5 x 10-4-8×10-4Pa, the third pressure is 1.0-5.0 Pa, and the third temperature is 200-300 ℃.
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