CN114300568B - SnSe nano rod array heterojunction device with room temperature ultrafast infrared response and preparation method thereof - Google Patents
SnSe nano rod array heterojunction device with room temperature ultrafast infrared response and preparation method thereof Download PDFInfo
- Publication number
- CN114300568B CN114300568B CN202111230907.3A CN202111230907A CN114300568B CN 114300568 B CN114300568 B CN 114300568B CN 202111230907 A CN202111230907 A CN 202111230907A CN 114300568 B CN114300568 B CN 114300568B
- Authority
- CN
- China
- Prior art keywords
- snse
- electrode layer
- substrate
- rod array
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000004044 response Effects 0.000 title claims abstract description 68
- 239000002073 nanorod Substances 0.000 title claims abstract description 62
- 238000002360 preparation method Methods 0.000 title abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 239000002184 metal Substances 0.000 claims abstract description 36
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 15
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 11
- 238000005516 engineering process Methods 0.000 claims abstract description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 22
- 229910052786 argon Inorganic materials 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 18
- 238000004544 sputter deposition Methods 0.000 claims description 18
- 239000013077 target material Substances 0.000 claims description 18
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- -1 argon ions Chemical class 0.000 claims description 9
- 230000001105 regulatory effect Effects 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 238000005086 pumping Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000005477 sputtering target Methods 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 41
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 238000009776 industrial production Methods 0.000 abstract description 4
- 238000005265 energy consumption Methods 0.000 abstract 1
- 231100000252 nontoxic Toxicity 0.000 abstract 1
- 230000003000 nontoxic effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 12
- 230000004298 light response Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 5
- 238000005316 response function Methods 0.000 description 5
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 description 4
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000003331 infrared imaging Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 206010021033 Hypomenorrhoea Diseases 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910021418 black silicon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000023077 detection of light stimulus Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- GFNGCDBZVSLSFT-UHFFFAOYSA-N titanium vanadium Chemical compound [Ti].[V] GFNGCDBZVSLSFT-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention discloses a SnSe nano rod array heterojunction device with room temperature ultrafast infrared response and a preparation method thereof. The method comprises the following steps: selecting a double-sided polished monocrystalline Si substrate; depositing a SnSe nano rod array film layer on the upper surface of the substrate by utilizing a magnetron sputtering technology; and depositing a transparent electrode layer on the surface of the film layer and depositing a metal electrode layer on the lower surface of the substrate. Based on the heterogeneous interface enhanced photo-thermal-electric conversion principle existing in the device, the device has obvious response performance to infrared light under the room temperature condition, and the response speed is extremely high. The infrared photoelectric detection device has the advantages of low energy consumption, high infrared responsivity and infrared detection rate, strong performance stability and the like; the preparation process is simple, the yield is high, the preparation process is nontoxic and pollution-free, and the preparation process is suitable for large-scale industrial production.
Description
Technical Field
The invention relates to a heterojunction device and a preparation method thereof, in particular to a SnSe nanorod array heterojunction photoelectric detection device and a preparation method thereof, and belongs to the field of semiconductor optoelectronic devices.
Background
In recent years, with the development of infrared imaging technology, the development of a photoelectric detection device with infrared response under non-refrigeration condition has received extensive attention from numerous researchers at home and abroad, and the main reason is that: the infrared light signal can be identified and monitored under the room temperature condition, a complex cooling device can be effectively avoided, the pixel unit and the integration density of the device are remarkably improved, and the resolution and the accuracy of infrared imaging are greatly enhanced.
In the prior art, the uncooled infrared photoelectric detector mainly adopts heat-sensitive semiconductor materials such as vanadium dioxide, amorphous silicon and the like, and the infrared response under the room temperature condition is realized by utilizing the heat radiation induction of the materials to infrared light. Because of the limitation of the heat conduction speed in the materials, the devices have the problem and the defect of longer response time, which is generally between a few seconds and a few seconds, and the infrared response speed of the devices is lower, so that the application range of the devices is reduced.
For example:
chinese patent 201510752224.2 discloses an active infrared camouflage structure based on vanadium dioxide, which is characterized in that a layer of vanadium dioxide film is coated or evaporated on the upper surface of a heating substrate, and the change of the emissivity of the vanadium dioxide is regulated by changing the temperature of the substrate, so that the infrared camouflage with low power consumption and rapid regulation is realized.
The invention patent ZL201910257251.0 discloses a thermosensitive film of a non-refrigeration infrared detector and a preparation method thereof, wherein vanadium, titanium or vanadium-titanium is used as a main doping binary or ternary metal oxide, so that the temperature resistance of the film is improved, and the infrared sensitivity and the temperature resistance of the thermosensitive film are improved by means of special metal doping.
The Chinese patent application ZL201110392877.6 discloses a preparation method of a non-refrigerating and heating infrared detector based on a black silicon material, wherein the method adopts an ion implantation sulfur element and ultra-fast laser irradiation mode to dope an amorphous silicon film with sulfur element to form the non-refrigerating and heating infrared detector.
Because of the strong light absorption capacity, the SnSe material is widely concerned in developing high-efficiency photoelectric detection devices. However, the SnSe photodetector device can only respond to the visible light band, limited by the band gap structure of the material.
For example:
the Chinese patent application ZL201710805805.7 discloses a photo-thermal detector based on a single SnSe film, which utilizes the transverse thermoelectric effect in the film plane to realize the detection of light and heat.
The Chinese patent application ZL201910141377.1 discloses a photoelectric detector of Pd/SnSe/Si/In heterojunction and a preparation method thereof, and the photoelectric detector has obvious visible light detection effect by utilizing the absorption of a compact continuous SnSe film on visible light.
However, the above-described photoelectric devices can only have a light response function to visible light, and cannot realize photoelectric detection in the infrared band range.
How to design a SnSe material structure, and develop a SnSe semiconductor material with infrared band response under room temperature conditions, and further develop a novel high-efficiency SnSe photoelectric detection device on the basis of the SnSe semiconductor material, which is a technical problem to be solved by those skilled in the field of current semiconductor materials and devices.
Disclosure of Invention
The invention aims to provide a SnSe nanorod array heterojunction photoelectric detection device with an ultrafast infrared light response function.
The invention aims to solve the technical problems that how to improve the internal structure of the SnSe photoelectric detection device breaks through the limit of the semiconductor band gap of the SnSe material, so that the response wavelength range of the device is expanded to the infrared band; the SnSe nanorod array film is prepared, and the SnSe/Si heterojunction device structure is formed, so that unique light-heat-electricity conversion is formed in the device, a temperature gradient is generated in the device, the current of the device is changed, the response performance of the device to incident light is formed, the response performance is further enhanced by utilizing the heterojunction interface effect, and the ultra-fast detection of the device to infrared band light is realized.
The technical scheme adopted by the invention for realizing the purpose is that the SnSe nanorod array heterojunction photoelectric detection device with the ultrafast infrared light response function and the preparation method thereof are characterized in that the device is of a layered structure and sequentially comprises a metal lower electrode layer, a monocrystalline Si semiconductor substrate, a SnSe nanorod array film layer and a transparent upper electrode layer from bottom to top, wherein:
the metal lower electrode layer is one of metals such as Al, cu, ag and the like, is deposited on the lower surface of the substrate through direct-current magnetron sputtering, and has the thickness of 50-300nm;
the single crystal Si semiconductor substrate is a single crystal with upper and lower surfaces polished on both sides, has an N-type semiconductor of electron conductivity type, has a resistivity of 0.5 to 10.0 Ω cm, and has a thickness of 50 to 200 μm;
the SnSe nano rod array film layer is deposited on the surface of the substrate through direct-current magnetron sputtering, has (100) lattice orientation and has the thickness of 100-300nm;
the transparent upper electrode layer is made of Indium Tin Oxide (ITO) film material, and is deposited on the surface of the SnSe nano rod array film layer through direct-current magnetron sputtering, and the thickness of the transparent upper electrode layer is 50-120nm;
the technical effect directly brought by the technical scheme is that, from the two aspects of material growth and structural characteristics, the optical-thermal-electrical conversion different from the traditional semiconductor material is formed in the SnSe nano rod array heterogeneous film, and the conversion does not depend on the semiconductor band gap width of the material, so that the photoelectric detection device has breakthrough promotion in the aspects of response wavelength range and response speed:
through detection, the SnSe nano rod array heterojunction photoelectric detection device of the technical scheme expands the light response wave band range to the infrared wave band, and particularly the response time is greatly shortened, so that the ultra-fast and sensitive infrared light detection capability is shown.
Lambda=1550 nm, a response rate of 47.3V/W and a detection rate of 5.2X10 9 Jones, response time was 11 μs.
For a better understanding of the above technical solution, a detailed description will be made in principle:
1. the technical effects achieved by using the SnSe nano rod array layer are as follows: (1) The light-heat conversion in the device can be enhanced by the high heat capacity value; (2) The thermoelectric conversion device has stronger thermoelectric performance and can enhance the thermoelectric conversion in the device; (3) The nano rod array has the structural characteristics of inhibiting in-plane thermal diffusion, remarkably enhancing the temperature gradient in the out-of-plane direction of the device and improving the thermoelectric field.
2. In the technical scheme, a metal layer with the thickness of 50-300nm is adopted as a lower electrode, and the main reasons are as follows: (1) The metal layers of Al, cu, ag and the like have good electric conductivity and thermal conductivity, and can keep good electron collection capacity and heat conduction capacity in an air environment; (2) The work function of the metals is similar to that of SnSe, ohmic contact can be formed between the metals and the SnSe film, and the carrier transport capacity is promoted.
3. In the above technical scheme, a single crystal Si semiconductor is used as a substrate, mainly because: (1) The Si material processing technology is mature, and the large-scale production of devices is easy to realize; (2) And a stronger interfacial built-in electric field is formed by superposition with SnSe, so that carrier transport in the device is promoted, and the response speed of the device is improved.
4. In the technical scheme, 50-120nm indium tin oxide ITO is adopted as the upper electrode, and the main reason is that: (1) The light transmission performance is good, and the effect between infrared light and SnSe is enhanced; (2) Good conductivity, and can enhance the carrier collecting and transporting capability.
Experiments prove that the SnSe nano rod array heterojunction photoelectric detection device of the technical scheme has the advantages of being high in infrared response, high in response value, ultra-fast in response speed, stable in signal, good in periodicity and the like.
The second purpose of the invention is to provide a preparation method of the SnSe nanorod array heterojunction photoelectric detection device with the ultrafast infrared light response function, which has the advantages of simple process, strong repeatability, high device yield, environmental friendliness and no pollution, and is suitable for large-scale industrial production.
The technical scheme adopted by the invention for realizing the purpose is that the preparation method of the SnSe nano rod array heterojunction photoelectric detection device with the ultrafast infrared light response function is characterized by comprising the following steps:
first, a pretreatment step of double-sided polishing of a single-crystal Si substrate:
sequentially and respectively placing the double-sided polished monocrystalline Si substrate in alcohol, acetone and deionized water for ultrasonic cleaning for 180 seconds;
taking out, and drying by using dry nitrogen;
second, a deposition step of a metal bottom electrode layer:
placing the Si semiconductor substrate which is rinsed clean by deionized water and dried by dry nitrogen into a tray, placing the tray into a vacuum cavity, pumping the vacuum cavity into a first high vacuum, adjusting the temperature of the Si substrate to a first temperature, adjusting the working argon pressure to a first pressure, bombarding a metal target by using ionized argon ions by adopting a direct current magnetron sputtering method, and depositing a metal layer on the surface of the Si semiconductor substrate under the condition of first sputtering power to serve as a lower electrode layer;
third, a deposition step of a SnSe nano rod array film layer:
loading the substrate deposited with the metal lower electrode layer into a tray, placing the substrate surface without the metal layer outwards, placing the substrate surface into a vacuum cavity, pumping the vacuum cavity into a second high vacuum, adjusting the temperature of the substrate to a second temperature, adjusting the argon pressure to a second pressure, bombarding a SnSe target material by using ionized argon ions by adopting a direct current magnetron sputtering technology, and depositing a layer of SnSe nano rod array film layer on the surface without the metal layer of the Si substrate under the condition of second sputtering power;
fourth, a deposition step of a transparent upper electrode layer:
and opening the vacuum cavity, and replacing the sputtering target material with an Indium Tin Oxide (ITO) target material. Then, the vacuum chamber is closed, and the vacuum chamber is evacuated to a third high vacuum. And (3) regulating the temperature of the sample on which the lower metal electrode layer and the SnSe nano rod array film are deposited to a third temperature, regulating the argon gas pressure to a third pressure, bombarding an indium tin oxide ITO target material by ionized argon ions under a third sputtering power condition by adopting a direct current magnetron sputtering technology, and depositing a transparent indium tin oxide ITO electrode layer on the surface of the SnSe nano rod array film layer to serve as an upper electrode layer.
3. The preparation method of the SnSe nano rod array heterojunction device with the room temperature ultrafast infrared response is characterized in that the purity of the argon is more than 99.999%;
the high-purity nitrogen is dry nitrogen with the purity of more than 99.5 percent;
the metal target material is Ag, cu or Al target material with the purity of more than 99.9 percent;
the SnSe target is a ceramic target with purity of 99.9%;
the indium tin oxide ITO target refers to a ceramic target with the purity of 99.99 percent.
4. The preparation method of the SnSe nanometer rod array heterojunction device with the room temperature ultrafast infrared response is characterized in that the first temperature is 20-25 ℃, and the first high vacuum is 2 multiplied by 10 -4 -3×10 -4 Pa, the first pressure is 0.3-0.5Pa, and the first sputtering power is 20-80mW.
5. The preparation method of the SnSe nanometer rod array heterojunction device with the room temperature ultrafast infrared response is characterized in that the second high vacuum is 3 multiplied by 10 -4 -5×10 -4 Pa, the second pressure is 1.0-3.0Pa, the second temperature is 300-600 ℃, and the second sputtering power is 20-80mW;
6. the preparation method of the SnSe nanometer rod array heterojunction device with the room temperature ultrafast infrared response is characterized in that the third high vacuum is 5 multiplied by 10 -4 -8×10 -4 Pa, the third pressure is 1.0-5.0Pa, the third temperature is 200-300 ℃, and the third sputtering power is 20-80mW;
preferably, the purity of the argon gas is 99.999%;
the nitrogen is dry nitrogen with the purity of 99.5 percent;
the purity of the metal target is 99.9%;
the purity of the SnSe target material is 99.9%;
the indium tin oxide ITO target refers to a ceramic target with the purity of 99.99 percent.
The technical effect directly brought by the optimized technical proposal is that the purity of the extracted raw materials can not only meet the purity of each layer of material in the obtained device, but also ensure the low cost of the device processing;
further preferably, the first temperature is 25℃and the first high vacuum is 4X 10 -4 Pa, wherein the first pressure is 0.5Pa, and the first sputtering power is 30mW.
The technical effect directly brought by the preferable technical proposal is that the metal lower electrode layer is not oxidized by residual gas and the purity is improved, and the metal ions can have enough adhesive force in the film forming process of the substrate surface;
further preferably, the second temperature is 450 ℃, and the second high vacuum is 5×10 -4 Pa, the second pressure is 1.0Pa, and the second sputtering power is 10mW.
The technical effect directly brought by the optimized technical scheme is that the quality of the SnSe nano rod array film can be further improved, and the nano rod array film can be prevented from being oxidized at a high temperature.
Further preferably, the third temperature is 200deg.C, and the third high vacuum is 6X10 -4 Pa, the third gas pressure is 2.0Pa, and the third sputtering power is 60mW.
The technical effect directly brought by the preferred technical scheme is that the good conductivity of the indium tin oxide ITO layer can be further improved, and the indium tin oxide ITO layer can be ensured to have enough light transmittance.
The technical scheme directly brings the technical effects of simple process, strong repeatability, high device yield, suitability for large-scale industrial production, environment friendliness, no pollution, no use of toxic and harmful raw materials, no generation of toxic and harmful waste and no exhaust emission.
In summary, compared with the prior art, the invention has the following beneficial effects:
1. the SnSe nanorod array heterojunction photoelectric detection device has infrared response property at room temperature, is high in response value, stable in signal and good in periodicity, has an ultra-fast response speed, and can be used for uncooled infrared detection.
SnSe nanometer rod array of the inventionHeterojunction photoelectric detection device, under room temperature condition, when incident light wavelength lambda=1550 nm, response rate is 47.3V/W, detection degree is 5.2×10 9 Jones, response time was 11 μs.
2. The preparation method of the SnSe nano rod array heterojunction photoelectric detector has the characteristics of simple process method, convenient control of process parameters, suitability for large-scale industrial production, low manufacturing cost, high yield, stable product quality and the like.
Drawings
FIG. 1 is a schematic diagram of a heterojunction photoelectric detection device of a Si-SnSe nanorod array prepared in example 1;
FIG. 2 is a SEM sectional view and a surface structure diagram of a heterojunction of a Si-SnSe nanorod array prepared in example 1;
FIG. 3 is an X-ray diffraction pattern of the Si-SnSe nanorod array heterojunction obtained in example 1;
FIG. 4 is a dynamic response curve of a heterojunction photoelectric detector of the Si-SnSe nanorod array prepared in example 1;
FIG. 5 is a response curve of the Si-SnSe nanorod array heterojunction photoelectric detection device prepared in example 1 under different illumination powers;
FIG. 6 is a response time curve of the Si-SnSe nanorod array heterojunction photoelectric detection device prepared in example 1;
fig. 7 is a graph showing the relationship between the light response rate and the detection degree of the heterojunction photoelectric detection device of the Si-SnSe nanorod array prepared in example 1 and the incident light power.
Detailed Description
The present invention will be described in detail with reference to the following examples and the accompanying drawings.
Example 1
(1) Selecting a double-sided polished monocrystalline Si semiconductor substrate;
(2) Ultrasonic cleaning in alcohol, acetone and deionized water for 180s. Taking out, and drying by using dry nitrogen;
(3) Loading the cleaned Si substrate into a tray, and placing the tray into a vacuum cavity;
(4) Vacuum pump for vacuum chamberVacuum degree is 3X 10 -4 Pa, maintaining the Si substrate temperature to be 20 ℃ at a first temperature;
(5) Regulating the working argon pressure to 0.5Pa, bombarding a metal Al target material by using ionized argon ions by adopting a direct current magnetron sputtering method, and depositing a metal Al layer on the surface of the Si substrate to serve as a lower electrode layer under the condition that the first sputtering power is 10W;
(6) Loading the substrate with the Al electrode layer deposited into a tray, and putting the substrate with the surface without the metal layer outwards into a vacuum cavity again;
(7) The vacuum degree of the vacuum cavity is pumped to be 5 multiplied by 10 -4 Pa, regulating the temperature of the substrate to a second temperature of 450 ℃, regulating the pressure of argon to 1.0Pa, bombarding the SnSe target material by utilizing ionized argon ions by adopting a direct current magnetron sputtering technology, and depositing a layer of SnSe nano rod array film layer on the surface of the Si substrate without the metal layer under the condition that the second sputtering power is 30W;
(8) Opening the vacuum cavity, and replacing the sputtering target material with an Indium Tin Oxide (ITO) target material;
(9) Closing the vacuum cavity, and vacuumizing the vacuum cavity to 1×10 -3 Pa. And (3) adjusting the temperature of the sample on which the lower metal electrode layer and the SnSe nano rod array film are deposited to a third temperature of 200 ℃, adjusting the argon pressure to 3Pa, adopting a direct current magnetron sputtering technology, bombarding an indium tin oxide ITO target material by using ionized argon ions under the condition that the third sputtering power is 20W, and depositing a transparent indium tin oxide ITO electrode layer serving as an upper electrode layer on the surface of the SnSe nano rod array film layer.
Through detection, the prepared SnSe nano rod array heterojunction device has a photo-thermal effect mechanism, so that obvious response performance can be generated for incident light with the wavelength of 1550 nm: the response can reach 48.5V/W, and the response time is 11 mu s.
Example 2
The second temperature of the substrate in example 1 was set at 100 ℃;
the remainder was the same as in example 1.
Through detection, the prepared SnSe heterojunction device has weak response to 1550nm wavelength infrared light: the response was 0.3V/W and the response time was 203. Mu.s.
Example 3
The second temperature of the substrate in example 1 was set at 200 ℃;
the remainder was the same as in example 1.
Through detection, the prepared SnSe heterojunction device has weak response to 1550nm wavelength infrared light: the response was 1.8V/W and the response time was 158. Mu.s.
Example 4
The second temperature of the substrate in example 1 was set at 300 ℃;
the remainder was the same as in example 1.
Through detection, the prepared SnSe heterojunction device has obvious response to 1550nm wavelength infrared light: the response was 4.1V/W and the response time was 103. Mu.s.
Example 5
The second temperature of the substrate in example 1 was set at 500 ℃;
the remainder was the same as in example 1.
Through detection, the prepared SnSe heterojunction device has obvious response to 1550nm wavelength infrared light: the response was 31.1V/W and the response time was 23. Mu.s.
Example 6
The substrate second sputtering power in example 1 was set to 10W;
the remainder was the same as in example 1.
Through detection, the prepared SnSe heterojunction device has obvious response to 1550nm wavelength infrared light: the response was 27.5V/W and the response time was 21. Mu.s.
Example 7
The substrate second sputtering power in example 1 was set to 20W;
the remainder was the same as in example 1.
Through detection, the prepared SnSe heterojunction device has obvious response to 1550nm wavelength infrared light: the responsivity was 33.3V/W and the response time was 18. Mu.s.
Comparing examples 1-7, we can derive:
the deposition temperature and the sputtering power of the SnSe material are increased, the crystallization quality of the SnSe nano rod is effectively improved, the light-heat-electricity conversion capability in the device is enhanced, and the ultra-fast infrared light detection performance is generated under the room temperature condition.
Example 1 was chosen as a representative example, and the SnSe heterojunction device thus produced was tested and analyzed, and the results were as shown in fig. 1-7.
The following describes the detection results in detail with reference to the accompanying drawings:
fig. 1 is a schematic diagram of a heterojunction measuring device of the prepared SnSe nano rod array.
As shown in the figure, the SnSe nanometer rod array layer is arranged on the surface of the Si substrate, the upper electrode layer is an ITO film, the lower electrode layer is a metal Al layer, and infrared light enters the device from the upper electrode layer.
FIG. 2 is a cross-sectional view and a surface view of a scanning electron microscope of the SnSe nanorod array prepared in example 1.
As shown in the figure, the SnSe nano rod array structure is clearly visible, the length of the nano rods is about 350nm, the diameter is between 30 and 80nm, and obvious interfaces are arranged between the nano rods;
FIG. 3 is an X-ray diffraction pattern of the SnSe nanorods array prepared in example 1.
As shown in the figure, the obvious X-ray diffraction peaks indicate that the SnSe nanorod array structure has good crystallization quality, and the (200), (400), (600) and (800) diffraction peaks indicate that the out-of-plane lattice orientation of the SnSe is (100) orientation.
Fig. 4 is a graph showing the dynamic response of the SnSe nanorod array heterojunction device prepared in example 1 to infrared light with a wavelength of 1550 nm.
As shown in the figure, under 1550nm infrared light period irradiation, the obtained SnSe nano rod array heterojunction device shows stable four-stage response characteristics, which are caused by the photo-thermal-electric effect inside the device;
fig. 5 is a graph showing the dynamic response of the SnSe nanorod array heterojunction device prepared in example 1 to infrared light with different intensities and 1550nm wavelengths.
As shown in the figure, the device has obvious response characteristics to infrared illumination conditions with different intensities, even under the condition of weak light of 5 mu W, the response state is stable, and no obvious attenuation characteristic exists;
fig. 6 is a single-period dynamic response curve of the SnSe nanorod array heterojunction device prepared in example 1 to infrared light with a wavelength of 1550 nm.
As shown in the figure, the device has an ultrafast response speed to infrared light, and the response time is only 11 mu s.
Fig. 7 is a graph showing the relationship between the optical responsivity and the detection rate of the SnSe nanorod array heterojunction device prepared in example 1 to 1550nm wavelength infrared light and the incident light intensity.
As shown in the figure, the responsivity and the detection rate of the device to infrared light are gradually increased along with the weakening of the incident light intensity, and the highest responsivity and the detection rate can respectively reach 48.5V/W and 5.4 multiplied by 10 9 Jones。
Claims (6)
1. The SnSe nanometer rod array heterojunction device with the room temperature ultrafast infrared response is characterized by being of a layered structure and sequentially comprising a metal lower electrode layer, a monocrystalline Si semiconductor substrate, a SnSe nanometer rod array film layer and a transparent upper electrode layer from bottom to top, wherein:
the metal lower electrode layer is one of metals such as Al, cu, ag and the like, is deposited on the lower surface of the substrate through direct-current magnetron sputtering, and has the thickness of 50-300nm;
the single crystal Si semiconductor substrate is a single crystal with upper and lower surfaces polished on both sides, has an N-type semiconductor of electron conductivity type, has a resistivity of 0.5 to 10.0 Ω cm, and has a thickness of 50 to 200 μm;
the SnSe nano rod array film layer is deposited on the surface of the substrate through direct-current magnetron sputtering, has (100) lattice orientation and has the thickness of 100-300nm;
the transparent upper electrode layer is made of Indium Tin Oxide (ITO) film material, and is deposited on the surface of the SnSe nano rod array film layer through direct-current magnetron sputtering, and the thickness of the transparent upper electrode layer is 50-120nm.
2. A method of fabricating a SnSe nanorod array heterojunction device with room temperature ultrafast infrared response as claimed in claim 1, comprising the steps of:
first, a pretreatment step of double-sided polishing a single-crystal Si semiconductor substrate:
sequentially and respectively placing the double-sided polished monocrystalline Si semiconductor substrate in alcohol, acetone and deionized water for ultrasonic cleaning for 180 seconds;
taking out, and drying by using dry nitrogen;
second, a deposition step of a metal bottom electrode layer:
placing the Si semiconductor substrate which is rinsed clean by deionized water and dried by dry nitrogen into a tray, placing the tray into a vacuum cavity, pumping the vacuum cavity into a first high vacuum, adjusting the temperature of the Si substrate to a first temperature, adjusting the working argon pressure to a first pressure, bombarding a metal target by using ionized argon ions by adopting a direct current magnetron sputtering method, and depositing a metal layer on the surface of the Si semiconductor substrate under the condition of first sputtering power to serve as a lower electrode layer;
third, a deposition step of a SnSe nano rod array film layer:
loading the substrate deposited with the metal lower electrode layer into a tray, placing the substrate surface without the metal layer outwards, placing the substrate surface into a vacuum cavity, pumping the vacuum cavity into a second high vacuum, adjusting the temperature of the substrate to a second temperature, adjusting the argon pressure to a second pressure, bombarding a SnSe target material by using ionized argon ions by adopting a direct current magnetron sputtering technology, and depositing a layer of SnSe nano rod array film layer on the surface without the metal layer of the Si substrate under the condition of second sputtering power;
fourth, a deposition step of a transparent upper electrode layer:
opening the vacuum cavity, and replacing the sputtering target material with an Indium Tin Oxide (ITO) target material; then closing the vacuum cavity, and pumping the vacuum cavity into a third high vacuum; and (3) regulating the temperature of the sample on which the lower metal electrode layer and the SnSe nano rod array film are deposited to a third temperature, regulating the argon gas pressure to a third pressure, bombarding an indium tin oxide ITO target material by ionized argon ions under a third sputtering power condition by adopting a direct current magnetron sputtering technology, and depositing a transparent indium tin oxide ITO electrode layer on the surface of the SnSe nano rod array film layer to serve as an upper electrode layer.
3. The method for preparing the SnSe nano rod array heterojunction device with the room temperature ultrafast infrared response according to claim 2, wherein the purity of the argon is more than 99.999%;
the nitrogen is dry nitrogen with the purity of more than 99.5 percent;
the metal target material is Ag, cu or Al target material with the purity of more than 99.9 percent;
the SnSe target is a ceramic target with purity of 99.9%;
the indium tin oxide ITO target refers to a ceramic target with the purity of 99.99 percent.
4. The method for preparing a SnSe nanorod array heterojunction device with room temperature ultrafast infrared response according to claim 2, wherein the first temperature is 20-25 ℃, and the first high vacuum is 2×10 -4 -3×10 -4 Pa, the first pressure is 0.3-0.5Pa.
5. The method for preparing a SnSe nanorod array heterojunction device with room temperature ultrafast infrared response according to claim 2, wherein the second high vacuum is 3×10 -4 -5×10 -4 Pa, the second pressure is 1.0-3.0Pa, and the second temperature is 300-600 ℃.
6. The method for preparing a SnSe nanorod array heterojunction device with room temperature ultrafast infrared response according to claim 2, wherein the third high vacuum is 5×10 -4 -8×10 -4 Pa, the third pressure is 1.0-5.0Pa, and the third temperature is 200-300 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111230907.3A CN114300568B (en) | 2021-10-22 | 2021-10-22 | SnSe nano rod array heterojunction device with room temperature ultrafast infrared response and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111230907.3A CN114300568B (en) | 2021-10-22 | 2021-10-22 | SnSe nano rod array heterojunction device with room temperature ultrafast infrared response and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114300568A CN114300568A (en) | 2022-04-08 |
| CN114300568B true CN114300568B (en) | 2024-03-26 |
Family
ID=80964436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111230907.3A Active CN114300568B (en) | 2021-10-22 | 2021-10-22 | SnSe nano rod array heterojunction device with room temperature ultrafast infrared response and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114300568B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115900966A (en) * | 2022-10-25 | 2023-04-04 | 深圳先进技术研究院 | Thermosensitive film, infrared detector and preparation method of infrared detector |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106744728A (en) * | 2016-12-19 | 2017-05-31 | 陕西科技大学 | A kind of method that room temperature liquid phase method prepares SnSe micron balls |
| CN109742179A (en) * | 2019-02-26 | 2019-05-10 | 中国石油大学(华东) | A kind of photodetector and preparation method thereof based on stannic selenide/silicon heterogenous |
| CN113054055A (en) * | 2021-03-10 | 2021-06-29 | 中国石油大学(华东) | SnSe/SnO-based2Self-driven photoelectric detector of multilayer spherical shell/Si heterojunction and preparation method thereof |
| CN113066888A (en) * | 2021-03-15 | 2021-07-02 | 中国石油大学(华东) | In-based2S3Self-driven photoelectric detector of nanosheet array/Si pyramid array heterojunction |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2889009A1 (en) * | 2012-10-26 | 2014-05-01 | Research Triangle Institute | Intermediate band semiconductors, heterojunctions, and optoelectronic devices utilizing solution processed quantum dots, and related methods |
| CN107541708B (en) * | 2017-07-27 | 2019-09-13 | 中国航发北京航空材料研究院 | The preparation method of mercury cadmium telluride thin film with one-dimensional nano-array structure |
| CN108054233A (en) * | 2017-12-11 | 2018-05-18 | 中国石油大学(华东) | A kind of infrared detector with nano combined heterojunction structure and preparation method thereof |
-
2021
- 2021-10-22 CN CN202111230907.3A patent/CN114300568B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106744728A (en) * | 2016-12-19 | 2017-05-31 | 陕西科技大学 | A kind of method that room temperature liquid phase method prepares SnSe micron balls |
| CN109742179A (en) * | 2019-02-26 | 2019-05-10 | 中国石油大学(华东) | A kind of photodetector and preparation method thereof based on stannic selenide/silicon heterogenous |
| CN113054055A (en) * | 2021-03-10 | 2021-06-29 | 中国石油大学(华东) | SnSe/SnO-based2Self-driven photoelectric detector of multilayer spherical shell/Si heterojunction and preparation method thereof |
| CN113066888A (en) * | 2021-03-15 | 2021-07-02 | 中国石油大学(华东) | In-based2S3Self-driven photoelectric detector of nanosheet array/Si pyramid array heterojunction |
Non-Patent Citations (1)
| Title |
|---|
| 磁控溅射法制备一维CdTe纳米棒阵列研究;罗炳威;邓元;高歌;;功能材料(18);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114300568A (en) | 2022-04-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Bello et al. | Achievements in mid and high-temperature selective absorber coatings by physical vapor deposition (PVD) for solar thermal Application-A review | |
| CN109461790B (en) | Gallium oxide/graphene heterojunction zero-power-consumption photoelectric detector and manufacturing method thereof | |
| US8853526B2 (en) | Surface plasmon-enhanced photovoltaic device | |
| CN110459640B (en) | Based on Cs3Cu2I5Self-powered perovskite photoelectric detector and preparation method thereof | |
| CN103887073B (en) | A kind of solaode strengthening principle based on surface plasma and preparation method thereof | |
| CN102709402A (en) | Thin-film solar battery based on imaged metal substrate and manufacturing method of battery | |
| CN114300568B (en) | SnSe nano rod array heterojunction device with room temperature ultrafast infrared response and preparation method thereof | |
| CN108630782B (en) | Preparation method of wide detection waveband dual-plasma working photoelectric detector | |
| CN102270705A (en) | Method for preparing transparent conductive electrode with dual-structure texture surface | |
| Ding et al. | Synthesis of Bi2S3 thin films based on pulse-plating bismuth nanocrystallines and its photoelectrochemical properties | |
| CN109841703A (en) | A kind of high stable, low-dark current full-inorganic perovskite photodetector and preparation method thereof | |
| Ji et al. | High-efficient ultraviolet photodetectors based on TiO 2/Ag/TiO 2 multilayer films | |
| CN110491966B (en) | Platinum telluride/methyl ammonia lead bromine perovskite single crystal heterojunction photoelectric detector and manufacturing method thereof | |
| Ren et al. | Preparation and property optimization of silver-embedded FTO transparent conductive thin films by laser etching and coating AZO layer | |
| Bhatia et al. | Morphological, electrical and optical properties of zinc oxide films grown on different substrates by spray pyrolysis technique | |
| Li et al. | Light trapping effect of textured FTO in perovskite solar cells | |
| CN110707176B (en) | Ultra-wideband thin film photoelectric detector and preparation method thereof | |
| Meng et al. | Effect of annealing temperature on TiO 2 nanorod films prepared by dc reactive magnetron sputtering for dye-sensitized solar cells | |
| CN112420933A (en) | Preparation method of heterojunction photoelectric detector based on single-walled carbon nanotube film | |
| CN114899270A (en) | Self-powered broadband spectrum heterojunction photoelectric detector and preparation method thereof | |
| CN113948595B (en) | Broadband hot electron light detector and preparation method thereof | |
| Umar et al. | Enhanced visible and IR light-sensing performance of photoconductive VO2 (M1) nanorods thin film | |
| CN117881261A (en) | Self-powered human body thermal radiation detection photoelectric detection device and preparation method thereof | |
| CN117577728A (en) | Adjustable band antimony sulfide selenide photoelectric detector of high-defect n-type amorphous silicon germanium layer and preparation method thereof | |
| CN109560162B (en) | Photoelectric detector based on nonpolar a-surface ZnOS film and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |