CN109560162B - Photoelectric detector based on nonpolar a-surface ZnOS film and preparation method thereof - Google Patents
Photoelectric detector based on nonpolar a-surface ZnOS film and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a photoelectric detector based on a nonpolar a-surface ZnOS film and a preparation method thereof. The detector of the invention sequentially comprises a r-surface sapphire substrate, a nonpolar a-surface ZnOS film and a pair of parallel metal electrodes from bottom to top, wherein: the parallel metal electrodes are perpendicular to the c-axis direction of the nonpolar a-plane ZnOS film. According to the method, r-surface sapphire is used as a substrate for film growth, a Pulse laser ablation deposition method is adopted, the substrate temperature is controlled to be 500-700 ℃, the Pulse laser energy is 300-400 mJ/Pulse, the oxygen pressure of film deposition is 4-6 Pa, a nonpolar a-surface ZnOS film is deposited on the surface of the r-surface sapphire substrate, and then an electrode is evaporated on the surface of the nonpolar a-surface ZnOS film through a thermal evaporation method. The detector of the invention has simple structure, simple preparation process, high response speed and strong detection capability.
Description
Technical Field
The invention belongs to the technical field of photoelectric detectors, and particularly relates to a photoelectric detector based on a nonpolar a-surface ZnOS film and a preparation method thereof.
Background
The third generation semiconductor material represented by zinc oxide (ZnO) is a new semiconductor material which is rapidly developed in recent years, has the advantages of large forbidden bandwidth, high breakdown electric field, high thermal conductivity, high electron saturation rate, strong radiation resistance and the like, is a core of solid-state light sources, power electronics and microwave radio-frequency devices, and is becoming a new strategic high ground of the global semiconductor industry.
ZnO as an important II-VI group wide bandgap semiconductor is widely researched by unique properties and application prospects in electronic and optoelectronic devices. The ZnO quantum dots have the advantages of large direct band gap (3.37eV), exciton binding energy (60meV), high visible light transmittance, ultraviolet absorption coefficient, good radiation resistance, abundant resources, stable chemical properties and the like, and ZnO has larger potential, more possibility and stronger competitiveness in the development and application of electronic and photoelectronic devices. Through the continuous attack and defense research for more than ten years, along with the understanding and the research of the characteristics of the ZnO semiconductor such as light, electricity, magnetism, piezoelectricity and the like, the application achievement of the ZnO semiconductor in the fields of solar cells, generators, sensors, detectors, light emitting diodes, lasers and the like is continuously brought forward, the research of ZnO enters a new stage of function expansion and comprehensive utilization, and good application prospects are shown.
In 2015, the group of applicants of the invention has successfully deposited high-quality ZnOS epitaxial films with a-plane orientation on r-plane sapphire by using a pulsed laser deposition method and studied the influence of different oxygen pressure conditions on the composition, structure and optical properties of the ZnOS films, but the application of the ZnOS films to photoelectric devices is not explored by the prior art.
The present application is proposed after further intensive research, development and innovation based on the above-mentioned work.
Disclosure of Invention
In order to overcome the above-mentioned drawbacks and problems of the prior art, it is an object of the present invention to provide a photodetector based on a non-polar a-plane oriented ZnOS thin film and a method for fabricating the same. The invention mainly promotes the separation of photon-generated carriers through a spontaneous polarization field in the a-surface ZnOS film, effectively improves the response speed of the optical detector and enhances the detection capability of the detector.
In order to achieve the first object of the present invention, the present invention adopts the following technical solutions:
a photoelectric detector based on a nonpolar a-plane ZnOS film, which sequentially comprises an r-plane sapphire substrate, the nonpolar a-plane ZnOS film and a pair of parallel metal electrodes from bottom to top, wherein: the parallel metal electrodes are perpendicular to the c-axis direction of the nonpolar a-plane ZnOS film.
Further, according to the technical scheme, the thickness of the nonpolar a-surface ZnOS film is 200-400 nm, and preferably 300 nm.
Further, according to the technical scheme, the thickness of the parallel metal electrode is 50 nm-100 nm.
Further, according to the technical scheme, the distance between the parallel metal electrodes is 10-100 μm, and preferably 100 μm.
Further, according to the above technical solution, the thickness of the r-plane sapphire substrate is 0.1 to 0.6mm, preferably 0.35 to 0.45 mm.
Further, in the above technical solution, the parallel metal electrode material may be any one of Al, Au, or Ag, and is preferably Au.
Another object of the present invention is to provide a method for preparing the above-mentioned non-polar a-plane ZnOS thin film-based photodetector, the method comprising the steps of:
(1) using r-plane sapphire as substrate for thin film growth and usingThe substrate is dried after being cleaned by ultrasonic wave through washing liquid, then the ZnS ceramic target material and the substrate are placed in a vacuum cavity of a pulse laser deposition system, a vacuum pump is started to ensure that the vacuum degree is 4 multiplied by 10-4～6×10-4Pa；
(2) Adopting a Pulse laser ablation deposition method, controlling the substrate temperature to be 500-700 ℃, controlling the Pulse laser energy to be 300-400 mJ/Pulse, depositing a film with the oxygen pressure of 4-6 Pa, and depositing a nonpolar a-surface ZnOS film on the surface of the r-surface sapphire substrate;
(3) determining the c-axis direction of the nonpolar a-surface ZnOS film prepared in the step (2), and marking; evaporating a pair of parallel metal electrodes on the surface of the nonpolar a-surface ZnOS thin film obtained in the step (2) by a thermal evaporation method by using a vacuum evaporator, wherein: the parallel metal electrodes are perpendicular to the c-axis direction of the non-polar a-plane ZnOS film.
Further, in the above technical scheme, the cleaning solution in step (1) includes acetone, ethanol, and deionized water, and the ultrasonic cleaning time is preferably 15 min.
Further, according to the technical scheme, the purity of the ZnS ceramic target material in the step (1) is 99.99%.
Further, in the above technical solution, the deposition time in the step (2) is 30 min.
Further, in the above technical scheme, the vacuum degree in the thermal evaporation process in the step (3) is 2 × 10-4～4×10-4Pa。
The principle of the invention is as follows:
under normal conditions, ZnO has a stable hexagonal wurtzite structure, which belongs to the hexagonal system and is an AB type covalent bond crystal. Along the c-axis direction Zn of ZnO2+Ionic layer and O2-The ion layers are alternately stacked, so that the c-plane of ZnO is a polar plane terminated by Zn or O, in other words, in the c-axis direction, the interior of ZnO exists from O2-With the ionic surface pointing towards Zn2+Spontaneous polarization of the ionic surface, and its induced Zn2+Ion surface pointing to O2-Depolarization electric field of the ion surface. When the ZnO thin film is oriented in the a-plane, i.e., (110) plane, Zn is in the surface2+And O2-Equal in number, i.e. without polesAnd (4) sex. At this time, the c-axis (polarization axis) of the ZnO thin film is parallel to the a-plane, which is the surface thereof, and therefore, a polarization electric field parallel to the surface thereof exists in the a-plane oriented ZnO. The a-ZnOS ternary alloy film grown on r-plane sapphire has the same structure as a-ZnO, the surface of the a-ZnOS ternary alloy film is a (110) plane, the c axis of the film is parallel to the (110) surface, and a polarization electric field parallel to the surface of the film exists in the film. When the parallel electrode vertical to the c axis of the film is prepared on the surface of the film, the direction of an external electric field is parallel to the spontaneous polarization field, and when the direction of the external electric field is the same as that of the spontaneous polarization field, the separation of carriers can be effectively promoted. That is to say, in the prepared a-surface ZnOS ternary alloy thin film photoelectric detection device, when the polarization field parallel to the surface of the thin film exists in the thin film and the direction of the external electric field of the electrode is consistent, the polarization field can be superposed and enhanced to separate and transmit photo-generated carriers, and the response speed of the photodetector is effectively improved.
Compared with the prior art, the photoelectric detector based on the nonpolar a-surface ZnOS film and the preparation method thereof have the following beneficial effects:
(1) the spontaneous polarization enhanced photoelectric detector based on the nonpolar a-surface ZnOS film, which is prepared by the invention, has the MSM structure, the structure is simple, no buffer layer is arranged between the substrate and the nonpolar a-surface ZnOS film, the response speed of the detector is high, and the detection capability of the detector is strong;
(2) the spontaneous polarization enhanced photoelectric detector based on the nonpolar a-plane ZnOS film has the advantages of simple preparation process, convenient operation, less raw material consumption, low manufacturing cost, easy production, contribution to industrial application and good market application prospect.
Drawings
FIG. 1 is an XRD pattern of a non-polar a-plane ZnOS thin film prepared in example 1 and example 2 of the present invention;
FIG. 2 is an XRD pattern of a polar c-plane ZnOS thin film prepared in example 3 of the present invention;
FIG. 3 is a schematic structural diagram of a nonpolar a-plane ZnOS thin film photodetector in embodiment 1 of the present invention;
FIG. 4 is a schematic structural diagram of a nonpolar a-plane ZnOS thin film photodetector in embodiment 2 of the present invention;
FIG. 5 is a schematic structural diagram of a polar c-plane ZnOS thin film photodetector in embodiment 3 of the present invention;
FIG. 6 is a graph showing the responsivity as a function of wavelength for a nonpolar a-plane ZnOS thin film photodetector in example 1 of the present invention;
FIG. 7 is an I-T plot of the photoresponse current of the nonpolar a-plane ZnOS thin film photodetector in example 1 of the present invention as a function of time;
FIG. 8 is an I-T plot of the photoresponse current of the nonpolar a-plane ZnOS thin film photodetector in accordance with embodiment 2 of the present invention as a function of time;
FIG. 9 is an I-T plot of the photoresponse current of the polar c-plane ZnOS thin film photodetector as a function of time in example 3 of the present invention.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The embodiment is implemented on the premise of the technical scheme of the invention, and a detailed implementation mode and a specific operation process are given, but the protection scope of the invention is not limited to the following embodiment.
Various modifications to the precise description of the invention will be readily apparent to those skilled in the art from the information contained herein without departing from the spirit and scope of the appended claims. It is to be understood that the scope of the invention is not limited to the procedures, properties, or components defined, as these embodiments, as well as others described, are intended to be merely illustrative of particular aspects of the invention. Indeed, various modifications of the embodiments of the invention which are obvious to those skilled in the art or related fields are intended to be covered by the scope of the appended claims.
For a better understanding of the invention, and not as a limitation on the scope thereof, all numbers expressing quantities, percentages, and other numerical values used in this application are to be understood as being modified in all instances by the term "about". Accordingly, unless expressly indicated otherwise, the numerical parameters set forth in the specification and attached claims are approximations that may vary depending upon the desired properties sought to be obtained. At the very least, each numerical parameter should at least be construed in light of the number of reported significant digits and by applying ordinary rounding techniques.
The sapphire substrate used in each of the following examples of the present invention was one whose main component was alumina (Al)2O3)，r-Al2O3Denotes r-plane sapphire, c-Al2O3C-plane sapphire is shown. The thickness of the sapphire substrate is preferably 0.35-0.45 mm.
Example 1
As shown in fig. 3, a photodetector based on a non-polar a-plane ZnOS thin film of the present embodiment includes, from bottom to top, a r-plane sapphire substrate, a non-polar a-plane ZnOS thin film, and a pair of parallel metal Au electrodes, wherein: the parallel metal Au electrode is vertical to the c-axis direction of the nonpolar a-surface ZnOS film; the thickness of the nonpolar a-surface ZnOS film is 300 nm; the thickness of the parallel metal Au electrode is 100 nm; the distance between the parallel metal Au electrodes is 100 mu m; the thickness of the r-plane sapphire substrate is 0.43 mm.
The photodetector based on the nonpolar a-plane ZnOS film is prepared by the following method, and comprises the following steps:
ZnS with the purity of 99.99 percent is adopted as a sputtering target material, a r-surface sapphire substrate is sequentially cleaned for 15min by acetone, absolute ethyl alcohol and deionized water through an ultrasonic cleaner, the target material and the substrate are placed into a vacuum chamber, and the vacuum pump is started to pump vacuum until the vacuum degree is 5 multiplied by 10-4Pa is about; starting a substrate heater, introducing oxygen after the temperature reaches 600 ℃, adjusting the oxygen pressure to 5Pa, starting a laser, setting the laser pulse frequency of the laser to be 5Hz, setting the laser pulse energy to be 350mJ/pulse, setting the number of laser pulses to be 9000, setting the autorotation speed of a target table to be 5r/min, setting the rotating speed of a sample table to be 10r/min, starting the laser, pre-sputtering for 3min, unscrewing a baffle of the sample table, starting to deposit a film, closing the laser after depositing for 30min, closing an oxygen valve and the substrate heater, naturally cooling the deposited film to room temperature, and taking out a vacuum chamber. The ZnOS film is characterized by XRD and the c-axis direction is determined,then ZnOS/Al is added2O3Placing in a mask of a vacuum coating instrument, making the parallel metal Au electrode perpendicular to the c-axis direction, starting a vacuum pump to evacuate until the vacuum degree is 2 × 10-4And when the pressure is about Pa, heating the Au particles to obtain the strip-shaped Au electrode. And performing photoelectric characterization on the prepared device under the condition of 10V external bias, wherein the change of the photoresponse is shown in figure 6, the I-T response curve is shown in figure 7, and the graph of the I-T response curve shows that the photoelectric detector achieves stable photocurrent after 200s of illumination, and the rise time tau of the photoelectric detector is increasedr16.87s, the dark current is stabilized after shading for 300s, and the falling time tau isd1Was 4.86 s.
Example 2
As shown in fig. 4, a photodetector based on a non-polar a-plane ZnOS thin film of the present embodiment includes, from bottom to top, a r-plane sapphire substrate, a non-polar a-plane ZnOS thin film, and a pair of parallel metal Au electrodes, where: the parallel metal Au electrode is parallel to the c-axis direction of the nonpolar a-surface ZnOS film; the thickness of the nonpolar a-surface ZnOS film is 300 nm; the thickness of the parallel metal Au electrode is 100 nm; the distance between the parallel metal Au electrodes is 100 mu m; the thickness of the r-plane sapphire substrate is 0.43 mm.
The photodetector based on the nonpolar a-plane ZnOS film is prepared by the following method, and comprises the following steps:
ZnS with the purity of 99.99 percent is adopted as a sputtering target material, a r-surface sapphire substrate is sequentially cleaned for 15min by acetone, absolute ethyl alcohol and deionized water through an ultrasonic cleaner, the target material and the substrate are placed into a vacuum chamber, and the vacuum pump is started to pump vacuum until the vacuum degree is 5 multiplied by 10-4Pa is about; starting a substrate heater, introducing oxygen after the temperature reaches 600 ℃, adjusting the oxygen pressure to 5Pa, starting a laser, setting the laser pulse frequency of the laser to be 5Hz, setting the laser pulse energy to be 350mJ/pulse, setting the number of laser pulses to be 9000, setting the autorotation speed of a target table to be 5r/min, setting the rotating speed of a sample table to be 10r/min, starting the laser, pre-sputtering for 3min, unscrewing a baffle of the sample table, starting to deposit a film, closing the laser after depositing for 30min, closing an oxygen valve and the substrate heater, and allowing the deposited film to be depositedAnd naturally cooling the film to room temperature and taking out the film from the vacuum chamber. The ZnOS film is characterized by XRD and the c-axis direction is determined, after which the ZnOS/Al is subjected to2O3Placing in a mask of a vacuum coating instrument to make the parallel metal Au electrode parallel to the c-axis direction, starting a vacuum pump to vacuumize until the vacuum degree is 2 multiplied by 10-4And when the pressure is about Pa, heating the Au particles to obtain the strip-shaped Au electrode. Performing photoelectric characterization on the prepared device under the condition of 10V external bias voltage, wherein the I-T response curve is shown in FIG. 8, and the graph of I-T in the graph shows that the photoelectric detector reaches stable photocurrent after 200s of illumination, and the rise time tau of the photoelectric detector isr1The dark current is 19.65s, and the current does not reach the stable dark current state after shading for 300 s.
Example 3
As shown in fig. 5, a photodetector based on a polar c-plane ZnOS film of the present embodiment includes, from bottom to top, a c-plane sapphire substrate, a polar c-plane ZnOS film, and a pair of parallel metal Au electrodes, wherein: the thickness of the polar c-surface ZnOS film is 300 nm; the thickness of the parallel metal Au electrode is 100 nm; the distance between the parallel metal Au electrodes is 100 mu m; the thickness of the c-plane sapphire substrate is 0.43 mm.
The photodetector based on the polar c-plane ZnOS thin film is prepared by the following method, and comprises the following steps:
ZnS with the purity of 99.99 percent is adopted as a sputtering target material, a c-surface sapphire substrate is sequentially cleaned for 15min by acetone, absolute ethyl alcohol and deionized water through an ultrasonic cleaner, the target material and the substrate are placed into a vacuum chamber, and the vacuum pump is started to pump vacuum until the vacuum degree is 5 multiplied by 10-4Pa is about; starting a substrate heater, introducing oxygen after the temperature reaches 600 ℃, adjusting the oxygen pressure to 5Pa, starting a laser, setting the laser pulse frequency of the laser to be 5Hz, setting the laser pulse energy to be 350mJ/pulse, setting the number of laser pulses to be 9000, setting the autorotation speed of a target table to be 5r/min, setting the rotating speed of a sample table to be 10r/min, starting the laser, pre-sputtering for 3min, unscrewing a baffle of the sample table, starting to deposit a film, closing the laser after depositing for 30min, closing an oxygen valve and the substrate heater, naturally cooling the deposited film to room temperature, and taking out the filmA vacuum chamber. Then ZnOS/Al is added2O3Placing in a mask of a vacuum coating apparatus, starting a vacuum pump to vacuumize until the vacuum degree is 2 × 10-4And heating the Au particles to obtain the strip-shaped Au electrode. And performing photoelectric characterization on the prepared device under the condition of 10V external bias voltage, wherein an I-T response curve is shown in FIG. 9, and the I-T curve in the graph shows that the photoelectric detector does not reach the stable photocurrent after being illuminated for 200s, and the current does not reach the stable dark current state after being shaded for 300 s.
Example 4
The photodetector based on the nonpolar a-plane ZnOS thin film of the embodiment sequentially comprises an r-plane sapphire substrate, a nonpolar a-plane ZnOS thin film and a pair of parallel metal Ag electrodes from bottom to top, wherein: the parallel metal Ag electrode is vertical to the c-axis direction of the nonpolar a-surface ZnOS film; the thickness of the nonpolar a-surface ZnOS film is 200 nm; the thickness of the parallel metal Ag electrode is 50 nm; the distance between the parallel metal Ag electrodes is 10 mu m; the thickness of the r-plane sapphire substrate is 0.3 mm.
The photodetector based on the nonpolar a-plane ZnOS film is prepared by the following method, and comprises the following steps:
ZnS with the purity of 99.99 percent is adopted as a sputtering target material, a r-surface sapphire substrate is sequentially cleaned for 15min by acetone, absolute ethyl alcohol and deionized water through an ultrasonic cleaner, the target material and the substrate are placed into a vacuum chamber, and the vacuum pump is started to pump vacuum until the vacuum degree is 4 multiplied by 10-4Pa; starting a substrate heater, introducing oxygen after the temperature reaches 700 ℃, adjusting the oxygen pressure to 6Pa, starting a laser, setting the laser pulse frequency of the laser to be 5Hz, setting the laser pulse energy to be 300mJ/pulse, setting the number of laser pulses to be 9000, setting the autorotation speed of a target table to be 5r/min, setting the rotating speed of a sample table to be 10r/min, starting the laser, pre-sputtering for 3min, unscrewing a baffle of the sample table, starting to deposit a film, closing the laser after depositing for 30min, closing an oxygen valve and the substrate heater, naturally cooling the deposited film to room temperature, and taking out a vacuum chamber. The ZnOS film is characterized by XRD and the c-axis direction is determined, after which the ZnOS/Al is subjected to2O3Placing in a mask of a vacuum coating apparatus, making the parallel metal Ag electrode perpendicular to the c-axis direction, starting a vacuum pump to evacuate until the vacuum degree is 3 × 10-4And when Pa is needed, heating the Ag particles to obtain the strip-shaped Ag electrode.
Example 5
The photoelectric detector based on the nonpolar a-plane ZnOS film of the embodiment sequentially comprises a r-plane sapphire substrate, the nonpolar a-plane ZnOS film and a pair of parallel metal Al electrodes from bottom to top, wherein: the parallel metal Al electrode is vertical to the c-axis direction of the nonpolar a-surface ZnOS film; the thickness of the nonpolar a-surface ZnOS film is 400 nm; the thickness of the parallel metal Al electrode is 80 nm; the distance between the parallel metal Al electrodes is 80 mu m; the thickness of the r-plane sapphire substrate is 0.5 mm.
The photodetector based on the nonpolar a-plane ZnOS film is prepared by the following method, and comprises the following steps:
ZnS with the purity of 99.99 percent is adopted as a sputtering target material, a r-surface sapphire substrate is sequentially cleaned for 15min by acetone, absolute ethyl alcohol and deionized water through an ultrasonic cleaner, the target material and the substrate are placed into a vacuum chamber, and the vacuum pump is started to pump vacuum until the vacuum degree is 6 multiplied by 10-4Pa; starting a substrate heater, introducing oxygen after the temperature reaches 500 ℃, adjusting the oxygen pressure to 4Pa, starting a laser, setting the laser pulse frequency of the laser to be 5Hz, setting the laser pulse energy to be 400mJ/pulse, setting the number of laser pulses to be 9000, setting the autorotation speed of a target table to be 5r/min, setting the rotating speed of a sample table to be 10r/min, starting the laser, pre-sputtering for 3min, unscrewing a baffle of the sample table, starting to deposit a film, closing the laser after depositing for 30min, closing an oxygen valve and the substrate heater, naturally cooling the deposited film to room temperature, and taking out a vacuum chamber. The ZnOS film is characterized by XRD and the c-axis direction is determined, after which the ZnOS/Al is subjected to2O3Placing in a mask of a vacuum coating apparatus, making the parallel metal Al electrode perpendicular to the c-axis direction, starting a vacuum pump to vacuumize until the vacuum degree is 4 × 10-4And heating the Al particles when the pressure is Pa to obtain the strip-shaped Al electrode.
Claims (8)
1. A photoelectric detector based on a nonpolar a-plane ZnOS film is characterized in that: the detector sequentially comprises a r-surface sapphire substrate, a nonpolar a-surface ZnOS film and a pair of parallel metal electrodes from bottom to top, wherein: the parallel metal electrodes are perpendicular to the c-axis direction of the nonpolar a-plane ZnOS film.
2. The non-polar a-plane ZnOS thin film-based photodetector of claim 1, wherein: the thickness of the nonpolar a-surface ZnOS film is 200-400 nm.
3. The non-polar a-plane ZnOS thin film-based photodetector of claim 1, wherein: the thickness of the parallel metal electrode is 50 nm-100 nm.
4. The non-polar a-plane ZnOS thin film-based photodetector of claim 1, wherein: the distance between the parallel metal electrodes is 10-100 mu m.
5. The non-polar a-plane ZnOS thin film-based photodetector of claim 1, wherein: the parallel metal electrode material is any one of Al, Au or Ag.
6. The method of claim 1 for fabricating a non-polar a-plane ZnOS thin film based photodetector, wherein: the method comprises the following steps:
(1) taking r-surface sapphire as a substrate for film growth, ultrasonically cleaning the substrate by using a cleaning solution, drying, then placing a ZnS ceramic target material and the substrate in a vacuum chamber of a pulse laser deposition system, starting a vacuum pump to ensure that the vacuum degree is 4 multiplied by 10-4～6×10-4Pa；
(2) Adopting a Pulse laser ablation deposition method, controlling the substrate temperature to be 500-700 ℃, controlling the Pulse laser energy to be 300-400 mJ/Pulse, depositing a film with the oxygen pressure of 4-6 Pa, and depositing a nonpolar a-surface ZnOS film on the surface of the r-surface sapphire substrate;
(3) determining the c-axis direction of the nonpolar a-surface ZnOS film prepared in the step (2), and marking; evaporating a pair of parallel metal electrodes on the surface of the nonpolar a-surface ZnOS thin film obtained in the step (2) by a thermal evaporation method by using a vacuum evaporator, wherein: the parallel metal electrodes are perpendicular to the c-axis direction of the non-polar a-plane ZnOS film.
7. The method of claim 6, wherein the step of fabricating a non-polar a-plane ZnOS thin film-based photodetector comprises: the purity of the ZnS ceramic target material in the step (1) is 99.99%.
8. The method of claim 6, wherein the step of fabricating a non-polar a-plane ZnOS thin film-based photodetector comprises: the deposition time in the step (2) is 30 min.
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