CN109560161B - Spontaneous polarization enhanced photoelectric detector based on m-plane ZnOS film and preparation method thereof - Google Patents
Spontaneous polarization enhanced photoelectric detector based on m-plane ZnOS film and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a spontaneous polarization enhanced photoelectric detector based on an m-plane ZnOS film and a preparation method thereof. The detector of the invention sequentially comprises an m-surface sapphire substrate, an m-surface ZnOS film and a pair of parallel metal electrodes from bottom to top, wherein: the parallel metal electrodes are perpendicular to the c-axis direction of the m-plane ZnOS thin film. When the directions of the electric field applied to the electrode and the internal spontaneous polarization field are the same, the internal polarization field and the external electric field are superposed, the separation and transmission of carriers are enhanced cooperatively, and the response speed of the photodetector is effectively improved. In addition, the photoelectric detector prepared by the invention is of an MSM structure, has a simple structure, a simple preparation process and low manufacturing cost, is easy to produce and is beneficial to industrial application.
Description
Technical Field
The invention belongs to the technical field of photoelectric detectors, and particularly relates to a spontaneous polarization enhanced photoelectric detector based on an m-plane ZnOS film and a preparation method thereof.
Background
The third generation semiconductor material represented by zinc oxide (ZnO) is a new semiconductor material which is rapidly developed in recent years, has the advantages of large forbidden bandwidth, high breakdown electric field, high thermal conductivity, high electron saturation rate, strong radiation resistance and the like, is a core of solid-state light sources, power electronics and microwave radio-frequency devices, and is becoming a new strategic high ground of the global semiconductor industry.
ZnO as an important II-VI group wide bandgap semiconductor is widely researched by unique properties and application prospects in electronic and optoelectronic devices. The material has the advantages of large direct band gap (3.37eV) and exciton binding energy (60meV), high visible light transmittance, high ultraviolet absorption coefficient, good radiation resistance, abundant resources, stable chemical properties and the like, so that the material has greater potential, more possibility and stronger competitiveness in the development and application of electronic and optoelectronic devices. Through the continuous attack and customs research for more than ten years, people continuously and deeply understand the characteristics of the ZnO semiconductor such as light, electricity, magnetism, piezoelectricity and the like, the application achievement of the ZnO semiconductor in the fields of solar cells, generators, sensors, detectors, light emitting diodes, lasers and the like is continuously increased, the research of ZnO enters a new stage of function expansion and comprehensive utilization at present, and the wide application prospect is shown.
The adjustment range of the forbidden band width of the ZnO material is limited, so that the further application of the ZnO material is limited. Therefore, the effective control of the forbidden bandwidth of ZnO materials based on metal element doping or the formation of ZnOX (X ═ S, Se, etc.) ternary alloys by anion partial substitution has been developed. For example, the inventor of the present application has previously published "pulsed laser deposition method for preparing a non-polar face ZnOS film and its performance research", and has disclosed that a ZnOS film is prepared on a-face, m-face sapphire and ZnO buffer layers, and the influence of substrate temperature and oxygen pressure on the structure and performance of the ZnOS film is systematically studied to obtain the optimized conditions for depositing a high-quality non-polar face ZnOS film, but this prior art has not investigated the application of the ZnOS film to photovoltaic devices.
The present application is proposed after further intensive research, development and innovation based on the above-mentioned work.
Disclosure of Invention
In order to overcome the defects and problems in the prior art, the invention aims to provide a spontaneous polarization enhanced photodetector based on an m-plane oriented ZnOS thin film and a preparation method thereof. The invention mainly promotes the separation of photon-generated carriers through a spontaneous polarization field in the m-surface ZnOS film, effectively improves the response speed of the optical detector and enhances the detection capability of the detector.
In order to achieve the first object of the present invention, the present invention adopts the following technical solutions:
a spontaneous polarization enhanced photoelectric detector based on an m-plane ZnOS film comprises an m-plane sapphire substrate, the m-plane ZnOS film and a pair of parallel metal electrodes from bottom to top in sequence, wherein: the parallel metal electrodes are perpendicular to the c-axis direction of the m-plane ZnOS thin film.
Further, according to the technical scheme, the thickness of the m-surface ZnOS film is 200-400 nm, and preferably 300 nm.
Further, according to the technical scheme, the thickness of the parallel metal electrodes is 50-100 nm.
Further, according to the technical scheme, the distance between the parallel metal electrodes is 10-100 μm, and preferably 100 μm.
Further, according to the above technical solution, the thickness of the m-plane sapphire substrate is 0.1 to 0.6mm, preferably 0.35 to 0.45 mm.
Further, in the above technical solution, the parallel metal electrode material may be any one of Al, Au, or Ag, and is preferably Al.
The invention also aims to provide a preparation method of the spontaneous polarization enhanced photodetector based on the m-plane ZnOS film, which comprises the following steps:
(1) taking m-surface sapphire as a substrate for film growth, ultrasonically cleaning the substrate by using a cleaning solution, drying, then placing a ZnS ceramic target material and the substrate in a vacuum chamber of a pulse laser deposition system, starting a vacuum pump to ensure that the vacuum degree is 4 multiplied by 10-4～6×10-4Pa；
(2) Adopting a Pulse laser ablation deposition method, controlling the substrate temperature to be 500-700 ℃, controlling the Pulse laser energy to be 300-400 mJ/Pulse, depositing a film with the oxygen pressure of 4-6 Pa, and depositing a m-surface ZnOS film on the surface of the m-surface sapphire substrate;
(3) determining the c-axis direction of the m-surface ZnOS film prepared in the step (2), and marking; evaporating a pair of parallel metal electrodes on the surface of the m-surface ZnOS thin film obtained in the step (2) by a thermal evaporation method by using a vacuum evaporator, wherein: and the parallel metal electrode is vertical to the c-axis direction of the m-plane ZnOS film.
Further, in the above technical scheme, the cleaning solution in step (1) includes acetone, ethanol, and deionized water, and the ultrasonic cleaning time is preferably 15 min.
Further, according to the technical scheme, the purity of the ZnS ceramic target material in the step (1) is 99.99%.
Further, according to the technical scheme, the deposition time in the step (2) is 10-60 min.
Further, in the above technical scheme, the vacuum degree in the thermal evaporation process in the step (3) is 2 × 10-4～4×10-4Pa。
The principle of the invention is as follows:
under normal conditions, ZnO has a stable hexagonal wurtzite structure, which belongs to the hexagonal system and is an AB type covalent bond crystal. Along the c-axis direction Zn of ZnO2+Ionic layer and O2-The ion layers are alternately stacked, so that the c-plane of ZnO is a polar plane terminated by Zn or O, in other words, in the c-axis direction, the interior of ZnO exists from O2-With the ionic surface pointing towards Zn2+Spontaneous polarization of the ionic surface, and its induced Zn2+Ion surface pointing to O2-Depolarization electric field of the ion surface. When ZnO is usedWhen the film is oriented in the m-plane, i.e., (100) plane, Zn is in the surface2+And O2-Equal in number, i.e. no polarity is present. At this time, the c-axis (polarization axis) of the ZnO thin film is parallel to the m-plane, which is the surface thereof, and therefore a polarization electric field parallel to the surface thereof exists in the m-plane oriented ZnO. The m-ZnOS ternary alloy thin film grown on the m-plane sapphire has the same structure as m-ZnO, the surface of the m-ZnOS ternary alloy thin film is a (100) plane, the c axis of the thin film is parallel to the (100) surface, and a polarization electric field parallel to the surface of the thin film exists in the thin film. When the parallel metal electrode perpendicular to the c axis of the film is prepared on the surface of the film, the direction of an external electric field is parallel to the spontaneous polarization field, and when the direction of the external electric field is the same as that of the spontaneous polarization field, the separation of carriers can be effectively promoted. That is to say, in the prepared m-surface ZnOS ternary alloy thin film photoelectric detection device, when the polarization field parallel to the surface of the thin film is consistent with the direction of an electric field applied by an electrode, the polarization field can be superposed and enhanced to separate and transmit photo-generated carriers, and the response speed of a photodetector is effectively improved.
Compared with the prior art, the spontaneous polarization enhanced photoelectric detector based on the m-plane ZnOS film and the preparation method thereof have the following beneficial effects:
(1) the spontaneous polarization enhanced photoelectric detector based on the m-plane ZnOS film, which is prepared by the invention, has an MSM structure, is simple in structure, a buffer layer is not arranged between a substrate and the ZnOS film layer, the response speed of the detector is high, and the detection capability of the detector is strong;
(2) the spontaneous polarization enhanced photoelectric detector based on the m-plane ZnOS film has the advantages of simple preparation process, convenient operation, less raw material consumption, low manufacturing cost, easy production, contribution to industrial application and good market application prospect.
Drawings
FIG. 1 is an XRD full spectrum of m-plane ZnOS thin films prepared in examples 1 and 2 of the invention;
FIG. 2 is an XRD full spectrum of a c-plane ZnOS thin film in example 3 of the present invention;
FIG. 3 is a schematic structural diagram of an m-plane ZnOS thin film spontaneous polarization enhanced photodetector in embodiment 1 of the present invention;
FIG. 4 is a schematic structural diagram of an m-plane ZnOS thin film spontaneous polarization free enhanced photodetector in embodiment 2 of the present invention;
FIG. 5 is a schematic structural diagram of a c-plane ZnOS thin film spontaneous polarization free enhanced photodetector in embodiment 3 of the present invention;
FIG. 6 is a graph showing the responsivity of an m-plane ZnOS thin film spontaneous polarization enhanced photodetector varying with wavelength in example 1 of the present invention;
FIG. 7 is an I-T curve of the change of the photoresponse current of the m-plane ZnOS thin film spontaneous polarization enhanced photodetector with time in embodiment 1 of the present invention;
FIG. 8 is an I-T curve of the optical response current of the m-plane ZnOS thin film non-spontaneous polarization enhanced photodetector varying with time in embodiment 2 of the present invention;
FIG. 9 is an I-T curve of the optical response current of the c-plane ZnOS thin film non-spontaneous polarization enhanced photodetector in example 3 of the present invention as a function of time.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The embodiment is implemented on the premise of the technical scheme of the invention, and a detailed implementation mode and a specific operation process are given, but the protection scope of the invention is not limited to the following embodiment.
Various modifications to the precise description of the invention will be readily apparent to those skilled in the art from the information contained herein without departing from the spirit and scope of the appended claims. It is to be understood that the scope of the invention is not limited to the procedures, properties, or components defined, as these embodiments, as well as others described, are intended to be merely illustrative of particular aspects of the invention. Indeed, various modifications of the embodiments of the invention which are obvious to those skilled in the art or related fields are intended to be covered by the scope of the appended claims.
For a better understanding of the invention, and not as a limitation on the scope thereof, all numbers expressing quantities, percentages, and other numerical values used in this application are to be understood as being modified in all instances by the term "about". Accordingly, unless expressly indicated otherwise, the numerical parameters set forth in the specification and attached claims are approximations that may vary depending upon the desired properties sought to be obtained. At the very least, each numerical parameter should at least be construed in light of the number of reported significant digits and by applying ordinary rounding techniques.
The sapphire substrate used in each of the following examples of the present invention was one whose main component was alumina (Al)2O3)，m-Al2O3Denotes m-plane sapphire, c-Al2O3C-plane sapphire is shown. The thickness of the sapphire substrate is preferably 0.35-0.45 mm.
Example 1
As shown in fig. 3, the spontaneous polarization enhanced photodetector based on an m-plane ZnOS film of the present embodiment includes, from bottom to top, an m-plane sapphire substrate, an m-plane ZnOS film, and a pair of parallel metal Al electrodes perpendicular to the c-axis direction of the m-plane ZnOS film, wherein: the thickness of the m-surface ZnOS film is 300 nm; the thickness of the parallel metal Al electrode is 100 nm; the distance between the parallel metal Al electrodes is 100 mu m; the thickness of the m-plane sapphire substrate is 0.43 mm.
The spontaneous polarization enhanced photodetector based on the m-plane ZnOS film is prepared by the following method, and comprises the following steps:
ZnS with the purity of 99.99 percent is adopted as a sputtering target material, an m-surface sapphire substrate is sequentially cleaned by acetone, absolute ethyl alcohol and deionized water for 15min through an ultrasonic cleaner, the target material and the substrate are placed into a vacuum chamber, and the vacuum pump is started to pump vacuum until the vacuum degree is 5 multiplied by 10-4Pa is about; starting a substrate heater, introducing oxygen after the temperature reaches 600 ℃, adjusting the oxygen pressure to 5Pa, starting a laser, setting the laser pulse frequency of the laser to be 5Hz, setting the laser pulse energy to be 350mJ/pulse, setting the number of laser pulses to be 9000, setting the autorotation speed of a target table to be 5r/min, setting the rotating speed of a sample table to be 10r/min, starting the laser, pre-sputtering for 3min, unscrewing a baffle plate of the sample table,and starting to deposit the film, closing the laser after depositing for 30min, closing the oxygen valve and the substrate heater, naturally cooling the deposited film to room temperature, and taking out the vacuum chamber. The ZnOS film is characterized by XRD and the c-axis direction is determined, after which the ZnOS/Al is subjected to2O3Placing in a mask of a vacuum coating apparatus, making the parallel metal Al electrode perpendicular to the c-axis direction, starting a vacuum pump to vacuumize until the vacuum degree is 2 × 10-4And when the pressure is about Pa, heating the aluminum particles to obtain the strip-shaped Al electrode. The photoelectric characterization of the prepared photoelectric detector is carried out by applying 1V voltage, the curve of the change of the light responsivity with time is shown in figure 6, the graph shows that the responsivity of the detector reaches the maximum value at 350nm, and the responsivity of the detector almost reaches 160000A/W. The I-T response curve is shown in FIG. 7, and the rise time τ of the detector can be obtained by fitting the curver1Is 8.02s, and its decay time taud1It was 43.87 s.
Example 2
As shown in fig. 4, the non-spontaneous polarization enhanced photodetector based on an m-plane ZnOS film of the present embodiment includes, from bottom to top, an m-plane sapphire substrate, an m-plane ZnOS film, and a pair of parallel metal Al electrodes, wherein: the parallel metal electrodes are parallel to the c-axis direction of the m-plane ZnOS film; the thickness of the m-surface ZnOS film is 300 nm; the thickness of the parallel metal Al electrode is 100 nm; the distance between the parallel metal Al electrodes is 100 mu m; the thickness of the m-plane sapphire substrate is 0.43 mm.
The non-spontaneous polarization enhanced photodetector based on the m-plane ZnOS film is prepared by the following method, and comprises the following steps:
ZnS with the purity of 99.99 percent is adopted as a sputtering target material, an m-surface sapphire substrate is sequentially cleaned by acetone, absolute ethyl alcohol and deionized water for 15min through an ultrasonic cleaner, the target material and the substrate are placed into a vacuum chamber, and the vacuum pump is started to pump vacuum until the vacuum degree is 5 multiplied by 10-4Pa is about; starting a substrate heater, introducing oxygen after the temperature reaches 600 ℃, adjusting the oxygen pressure to 5Pa, starting a laser, setting the laser pulse frequency of the laser to 5Hz, setting the laser pulse energy to 350mJ/pulse, and lasing9000 pulses, 5r/min autorotation speed of a target platform, 10r/min rotation speed of a sample platform, starting a laser, pre-sputtering for 3min, unscrewing a baffle of the sample platform, starting to deposit a film, closing the laser after 30min of deposition, closing an oxygen valve and a substrate heater, naturally cooling the deposited film to room temperature, and taking out the vacuum chamber. The ZnOS film is characterized by XRD and the c-axis direction is determined, after which the ZnOS/Al is subjected to2O3Placing in a mask of a vacuum coating apparatus to make the parallel metal Al electrode parallel to the c-axis direction, starting a vacuum pump to vacuumize until the vacuum degree is 2 × 10-4And when the pressure is about Pa, heating the aluminum particles to obtain the strip-shaped Al electrode. The photoelectric characterization of the prepared photoelectric detector is carried out by applying 1V voltage, the I-T response curve is shown in figure 8, and the I-T curve of figure 8 shows that after the illumination and the same time of example 1, the photoresponse current of the detector is far from the steady state, and the falling time tau of the detector can be obtained by fittingd1Is 147.7 s.
Example 3
As shown in fig. 5, the non-spontaneous polarization enhanced photodetector based on a c-plane ZnOS film of the present embodiment includes, from bottom to top, a c-plane sapphire substrate, a c-plane ZnOS film, and a pair of parallel metal Al electrodes, wherein: the thickness of the c-surface ZnOS film is 300 nm; the thickness of the parallel metal Al electrode is 100 nm; the distance between the parallel metal Al electrodes is 100 mu m; the thickness of the c-plane sapphire substrate is 0.43 mm.
The non-spontaneous polarization enhanced photodetector based on the c-plane ZnOS film is prepared by the following method, and comprises the following steps:
ZnS with the purity of 99.99 percent is adopted as a sputtering target material, a c-surface sapphire substrate is sequentially cleaned for 15min by acetone, absolute ethyl alcohol and deionized water through an ultrasonic cleaner, the target material and the substrate are placed into a vacuum chamber, and the vacuum pump is started to pump vacuum until the vacuum degree is 5 multiplied by 10-4Pa is about; starting a substrate heater, introducing oxygen after the temperature reaches 600 ℃, adjusting the oxygen pressure to 5Pa, starting a laser, setting the laser pulse frequency of the laser to 5Hz, and setting the laser pulse energy to 350mJ/pulAnd se, 9000 laser pulses, 5r/min of the autorotation speed of the target platform and 10r/min of the rotating speed of the sample platform, starting the laser, pre-sputtering for 3min, then unscrewing a baffle of the sample platform, starting to deposit the film, closing the laser after depositing for 30min, closing an oxygen valve and a substrate heater, naturally cooling the deposited film to room temperature, and then taking out the vacuum chamber. Then ZnOS/Al is added2O3Placing in a mask of a vacuum coating apparatus, starting a vacuum pump to vacuumize until the vacuum degree is 2 × 10-4And when the pressure is about Pa, heating the aluminum particles to obtain the strip-shaped Al electrode. The photoelectric characterization of the prepared photodetector is carried out by applying 1V voltage, the I-T response line is shown in FIG. 9, and it can be seen from the figure that after the same time as that of example 1, the photoresponse current of the detector is far less than the steady state, and after a long time of shading, the initial dark current is not recovered.
Example 4
The spontaneous polarization enhanced photoelectric detector based on the m-plane ZnOS thin film comprises an m-plane sapphire substrate, an m-plane ZnOS thin film and a pair of parallel metal Au electrodes from bottom to top in sequence, wherein: the parallel metal electrodes are perpendicular to the c-axis direction of the m-plane ZnOS film; the thickness of the m-surface ZnOS film is 200 nm; the thickness of the parallel metal Au electrode is 50 nm; the distance between the parallel metal Au electrodes is 50 mu m; the thickness of m face sapphire substrate is 0.3 mm.
The spontaneous polarization enhanced photodetector based on the m-plane ZnOS film is prepared by the following method, and comprises the following steps:
ZnS with the purity of 99.99 percent is adopted as a sputtering target material, an m-surface sapphire substrate is sequentially cleaned by acetone, absolute ethyl alcohol and deionized water for 15min through an ultrasonic cleaner, the target material and the substrate are placed into a vacuum chamber, and the vacuum pump is started to pump vacuum till the vacuum degree is 4 multiplied by 10-4Pa is about; starting a substrate heater, introducing oxygen after the temperature reaches 700 ℃, adjusting the oxygen pressure to 6Pa, starting a laser, setting the laser pulse frequency of the laser to be 5Hz, setting the laser pulse energy to be 300mJ/pulse, setting the number of laser pulses to be 9000, and setting the autorotation speed of a target table to be 5r/miAnd n, the rotating speed of the sample stage is 10r/min, the laser is started, after the pre-sputtering is carried out for 3min, the baffle plate of the sample stage is unscrewed, the film deposition is started, the laser is closed after the deposition is carried out for 30min, the oxygen valve and the substrate heater are closed, the deposited film is naturally cooled to the room temperature, and then the vacuum chamber is taken out. The ZnOS film is characterized by XRD and the c-axis direction is determined, after which the ZnOS/Al is subjected to2O3Placing in a mask of a vacuum coating instrument, making the parallel metal Au electrode perpendicular to the c-axis direction, starting a vacuum pump to evacuate until the vacuum degree is 3 × 10-4And heating the gold wire to obtain the strip Au electrode when the pressure is about Pa.
Example 5
The spontaneous polarization enhanced photoelectric detector based on the m-plane ZnOS thin film comprises an m-plane sapphire substrate, an m-plane ZnOS thin film and a pair of parallel metal Ag electrodes from bottom to top in sequence, wherein: the parallel metal electrodes are perpendicular to the c-axis direction of the m-plane ZnOS film; the thickness of the m-surface ZnOS film is 400 nm; the thickness of the parallel metal Ag electrode is 80 nm; the distance between the parallel metal Ag electrodes is 10 mu m; the thickness of the m-plane sapphire substrate is 0.5 mm.
The spontaneous polarization enhanced photodetector based on the m-plane ZnOS film is prepared by the following method, and comprises the following steps:
ZnS with the purity of 99.99 percent is adopted as a sputtering target material, an m-surface sapphire substrate is sequentially cleaned by acetone, absolute ethyl alcohol and deionized water for 15min through an ultrasonic cleaner, the target material and the substrate are placed into a vacuum chamber, and the vacuum pump is started to pump vacuum till the vacuum degree is 6 multiplied by 10-4Pa is about; starting a substrate heater, introducing oxygen after the temperature reaches 500 ℃, adjusting the oxygen pressure to 4Pa, starting a laser, setting the laser pulse frequency of the laser to be 5Hz, setting the laser pulse energy to be 400mJ/pulse, setting the number of laser pulses to be 9000, setting the autorotation speed of a target table to be 5r/min, setting the rotating speed of a sample table to be 10r/min, starting the laser, pre-sputtering for 3min, unscrewing a baffle of the sample table, starting to deposit a film, closing the laser after depositing for 30min, closing an oxygen valve and the substrate heater, naturally cooling the deposited film to room temperature, and taking out a vacuum chamber. By XRD, representing the ZnOS film, determining the c-axis direction, and then carrying out ZnOS/Al2O3Placing in a mask of a vacuum coating apparatus, making the parallel metal Ag electrode perpendicular to the c-axis direction, starting a vacuum pump to evacuate until the vacuum degree is 4 × 10-4And when the pressure is about Pa, heating the silver particles to obtain the strip-shaped Ag electrode.
Claims (8)
1. Spontaneous polarization enhancement mode photoelectric detector based on m face ZnOS film, its characterized in that: the detector sequentially comprises an m-plane sapphire substrate, an m-plane ZnOS film and a pair of parallel metal electrodes from bottom to top, wherein: the parallel metal electrodes are perpendicular to the c-axis direction of the m-plane ZnOS thin film.
2. The spontaneous polarization enhanced photodetector based on an m-plane ZnOS thin film as claimed in claim 1, wherein: the thickness of the m-surface ZnOS film is 200-400 nm.
3. The spontaneous polarization enhanced photodetector based on an m-plane ZnOS thin film as claimed in claim 1, wherein: the thickness of the parallel metal electrode is 50-100 nm.
4. The spontaneous polarization enhanced photodetector based on an m-plane ZnOS thin film as claimed in claim 1, wherein: the distance between the parallel metal electrodes is 10-100 mu m.
5. The spontaneous polarization enhanced photodetector based on an m-plane ZnOS thin film as claimed in claim 1, wherein: the parallel metal electrode material is any one of Al, Au or Ag.
6. The method of claim 1 for fabricating a spontaneous polarization enhancement mode photodetector based on m-plane ZnOS thin film, wherein: the method comprises the following steps:
(1) taking m-plane sapphire as a substrate for thin film growth, ultrasonically cleaning the substrate by using a cleaning solution, drying, and then mixing ZnS ceramic target material with the substrateThe substrate is placed in a vacuum chamber of a pulse laser deposition system, and a vacuum pump is started to ensure that the vacuum degree is 4 multiplied by 10-4～6×10-4Pa；
(2) Adopting a Pulse laser ablation deposition method, controlling the substrate temperature to be 500-700 ℃, controlling the Pulse laser energy to be 300-400 mJ/Pulse, depositing a film with the oxygen pressure of 4-6 Pa, and depositing a m-surface ZnOS film on the surface of the m-surface sapphire substrate;
(3) determining the c-axis direction of the m-surface ZnOS film prepared in the step (2), and marking; evaporating a pair of parallel metal electrodes on the surface of the m-surface ZnOS thin film obtained in the step (2) by a thermal evaporation method by using a vacuum evaporator, wherein: and the parallel metal electrode is vertical to the c-axis direction of the m-plane ZnOS film.
7. The method of claim 6, wherein the method comprises: the purity of the ZnS ceramic target material in the step (1) is 99.99%.
8. The method of claim 6, wherein the method comprises: and (3) the deposition time in the step (2) is 10-60 min.
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