CN108054233A - A kind of infrared detector with nano combined heterojunction structure and preparation method thereof - Google Patents
A kind of infrared detector with nano combined heterojunction structure and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 21
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- 239000002184 metal Substances 0.000 claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 229910003090 WSe2 Inorganic materials 0.000 claims abstract description 47
- 239000010408 film Substances 0.000 claims abstract description 35
- 239000010409 thin film Substances 0.000 claims abstract description 13
- 239000002131 composite material Substances 0.000 claims abstract description 12
- 238000005516 engineering process Methods 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 8
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 5
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000010849 ion bombardment Methods 0.000 claims description 5
- 238000000053 physical method Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
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- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 14
- 230000008901 benefit Effects 0.000 abstract description 5
- 238000012360 testing method Methods 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 239000004020 conductor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- -1 chalcogenide compound Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
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- 230000000737 periodic effect Effects 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
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- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention belongs to optical detector technology fields, and in particular to a kind of infrared detector with nano combined heterojunction structure should have the infrared detector of nano combined heterojunction structure, from top to bottom include electrode, WO before metal In point electrodes, metal Pd successively3‑x‑WSe2Composite film layer, SiO2Insulating buffer layer, Si single crystal substrates and metal In back electrodes.WO3‑x‑WSe2Composite film layer is by the rf magnetron sputtering WSe in Si substrates2Film and in air carry out heat treatment preparation.Test result shows that prepared thin-film device shows good infrared optical response performance, has many advantages, such as fast response time.
Description
Technical field
The invention belongs to optical detector technology fields, and in particular to a kind of infrared detector and preparation method thereof.
Background technology
Photodetector refers to a kind of electronic device that can convert light signals into electric signal.Infrared detector is wide
It is applied to the fields such as infrared guidance, bio-imaging, non-destructive testing, communication, environmental monitoring generally.But the major part reported at present
Infrared detector has the shortcomings that of high cost, preparation process is complicated, this seriously inhibits optical detector in real life
Using [ACSnano, 2017,11 (7):7118].Therefore, prepared with simpler technique and less expensive cost high performance
Optical detector has great importance.
Silicon is most common semiconductor in modern electronics, has conclusive status in commercial electronic equipment market.
But silicon substrate optical detector performance commercial at present general [Nature Photonics, 2016,10 (2):81-92], therefore into one
Step promotes the performance of silicon substrate optical detector, and obtaining the optical detector with more dominance energy is necessary.
Transient metal chalcogenide compound is due to excellent photoelectric properties, being widely used in photoelectron neck
Domain.In addition, in recent years, have it was discovered by researchers that the transient metal chalcogenide compound unstable [ACS of property in air
nano,2016,10(5):5153-5160], which prevent its applications in real life.
The content of the invention
It is an object of the invention to provide one kind to have WO3-x-WSe2The infrared light detecting of the nano combined heterojunction structures of/Si
Device and preparation method thereof, can solve current Si bases infrared detector performance is general and WSe2It is unstable in air
Problem.
The technical problem to be solved is that pass through magnetron sputtering and the side of oxidation processes to the present invention to achieve the above object
Method improves the performance of infrared detector；WO is prepared by magnetron sputtering and oxidation treatment method3-x-WSe2/ Si nanometers multiple
Heterojunction structure is closed, so as to enhance its infrared light detecting ability.
Present invention technical solution used for the above purpose is, a kind of infrared with nano combined heterojunction structure
Optical detector, which is characterized in that for layer structure, by up to
Under include metal In point electrodes, electrode, WO before metal Pd successively3-x-WSe2Composite film layer, SiO2Buffer insulation
Layer, Si single crystal substrates and metal In back electrodes；Wherein：
Preferably, the Si single crystal substrates are single-sided polishings, and high preferred orientation is (100) face, and conduction type is n-type, resistance
Rate is 1~3 ohmcm；
Preferably, the SiO2The thickness of insulating buffer layer is 1-3 nanometers；
Preferably, the Si substrate surfaces are also covered with mask piece, and mask piece is located at WO3-x-WSe2Composite film layer and band
There is SiO2Between the Si substrates of insulating buffer layer；
Preferably, the metal In point electrodes connect Ni metal conducting wire with metal In electrodes.
A kind of preparation method of the infrared detector with nano combined heterojunction structure, comprises the following steps：
(1) Si substrates are chosen, it is cleaned；
(2) the Si substrates after the completion of cleaning are dried；
(3) the dry Si substrates completed are put into vacuum chamber, under ar gas environment, using radiofrequency magnetron sputtering technology, profit
The argon ion bombardment WSe that electricity consumption separates out2Target deposits WSe in Si substrate surfaces2Film layer；The WSe2Target is WSe2Ceramics
Target, target purity are 99.9%, and the ar pressure maintains 1.0 Pascals constant, and target-substrate distance is 50 millimeters, the deposition temperature of film
It spends for 20~25 degrees Celsius, thin film layer thickness is 40-100 nanometers；
(4) it will be covered with WSe2The Si substrates of film layer are put into tube type resistance furnace, in the case where temperature is 100~400 degree Celsius
It anneals in air atmosphere, temperature rate-of-rise is 10 centigrade per minutes, until keeping 30 minutes at 100~400 degrees Celsius, then
Cooled to room temperature obtains WO3-x-WSe2The nano combined heterojunction structures of/Si；
(5) in WO3-x-WSe2The WO of the nano combined heterojunction structures of/Si3-x-WSe2Side mask film covering piece, then puts it into
Vacuum chamber, using magnetically controlled DC sputtering technology, using the argon ion bombardment metal Pd target ionized out, in WO3-x-WSe2/ Si receives
Rice composite heterogenous junction structure surface deposited metal Pd film layers；The Pd targets are Pd metallic targets, and target purity is 99.9%, described
Ar pressure maintains 5.0 Pascals constant, and target-substrate distance is 50 millimeters, and the depositing temperature of film is 20~25 degrees Celsius, film layer
Thickness is 10-30 nanometers；
(6) by WO3-x-WSe2The SiO at the nano combined heterojunction structure back sides of/Si2Layer is removed with physical method；
(7) compacting of metal electrode is completed in electrode and Si substrates before metal Pd respectively, and draws plain conductor, completed
The preparation of device.
Preferably, in step (1), the Si substrates are n-type Si single crystal substrates, and size is 10 millimeters × 10 millimeters, resistance
Rate is 1~3 ohmcm；Cleaning process is as follows：By Si substrates, repeated ultrasonic is clear in high absolute alcohol and acetone soln successively
It washes, each scavenging period length is 180 seconds.
Preferably, in step (2), the Si substrate dryings process is to be dried up substrate with drying nitrogen, and nitrogen gas purity is
99.95%.
Preferably, in step (3), the back end vacuum degree of the vacuum chamber is 5 × 10-5Pascal, vacuum condition are by machine
Tool pumps and molecular pump two-stage vacuum pump is made jointly.
Preferably, in step (5), the mask sheet material be stainless steel, thickness be 0.1 millimeter, size for 10 millimeters ×
10 millimeters, aperture size is 5 millimeters × 5 millimeters；The back end vacuum degree of the vacuum chamber is 5 × 10-5Pascal, vacuum condition are
It is made jointly by mechanical pump and molecular pump two-stage vacuum pump.
Preferably, in step (6), the physical method files division for file, and file is 0.5 millimeter except thickness.
Preferably, in step (7), the metal electrode and conductor material are In and Cu respectively, and the wherein purity of In is
99.5%, metal In electrode sizes and thickness are respectively 1 millimeter × 1.5 millimeters and 1 millimeter in metal Pd film layer, in Si substrates
Metal In electrode sizes and thickness are respectively 10 millimeters × 10 millimeters and 2 millimeters, and Cu diameter of wire is 0.1 millimeter.
The above-mentioned device with infrared light detecting ability can be applied in terms of infrared detector is prepared.
The method have the benefit that：
Invention in Si substrate surfaces by depositing WSe2Film, and simply aoxidized, utilize the nano combined of preparation
The excellent photosensitive property of heterojunction structure is developed with to thin-film device of the infrared light with sensitlzing effect.Test result is shown：Institute
The thin-film device of preparation has apparent sensitive property to infrared light, i.e., device reverse current significantly increases under the conditions of infrared light photograph
Add.Prepared thin-film device increases infrared optical response with the increase of intensity of illumination.Meanwhile the device has infrared optical response
Have the advantages that fast response time, cycle are reproducible.With presently, there are infrared detector compared with, device involved in the present invention
The preparation method of part is simple, of low cost, and has many advantages, such as that infrared optical response performance is notable, can be widely applied to infrared light spy
Survey field.
Description of the drawings
Fig. 1 is the structure diagram of prepared device infrared light detecting performance measurement.
Fig. 2 is that the I-V curve of prepared device under illumination and dark condition compares.
Fig. 3 is periodic response performance of the device to infrared light of device.
Specific embodiment
The present invention deposits WSe using radiofrequency magnetron sputtering technology on Si semiconductor bases2Film layer, by air
In be thermally treated resulting in WO3-x-WSe2The nano combined heterojunction structures of/Si pass through electrode before magnetically controlled DC sputtering technology deposited metal Pd
And pressed metal In electrodes and connection plain conductor, formed device.When under infrared light, due to photoelectric effect, nanometer
Photo-generated carrier is generated in composite heterogenous junction structure, this causes device current that significant change occurs, so that prepared WO3-x-
WSe2The nano combined heterojunction structures of/Si show infrared light apparent response performance.
With reference to embodiment and attached drawing, the present invention is described in detail.
The present invention is a kind of infrared detector with nano combined heterojunction structure, including WO3-x-WSe2Laminated film
Layer and Si semiconductor bases, Si substrates are as WO3-x-WSe2The carrier of composite film layer, WO3-x-WSe2Composite film layer is arranged on
Si substrate surfaces.Si substrates are n-type Si single crystal substrates, and resistivity is 1~3 ohmcm, and crystalline orientation is orientated for (100).
The WO3-x-WSe2Composite film layer is prepared using heat treatment technics in radiofrequency magnetron sputtering technology and air, and thickness is
40~100 nanometers.
It further says, the WO3-x-WSe2The nano combined heterojunction structure surfaces of/Si are also covered with mask sheet, mask sheet
Positioned at WO3-x-WSe2Before composite film layer and metal Pd between electrode, mask sheet material therefor is stainless steel, and mask sheet thickness is
0.1 millimeter, size is 10 millimeters × 10 millimeters, and aperture size is 5 millimeters × 5 millimeters；Electrode is to utilize DC magnetic before metal Pd
Control prepared by sputtering technology, thickness is 10~30 nanometers.
Further, pressed metal In electrodes, and extraction wire are distinguished before metal Pd on electrode and in Si substrates, is obtained
To device.
The preparation method of above-mentioned device, specifically includes following steps：
(1) Si substrates are chosen, it is cleaned；The Si substrates are n-type Si single crystal substrates, and size is 10 millimeters × 10
Millimeter, resistivity are 1~3 ohmcm；Cleaning process is as follows：Si substrates is more in high absolute alcohol and acetone soln successively
Secondary ultrasonic cleaning, the time span cleaned every time are 180 seconds.
(2) the Si substrates after the completion of cleaning are dried；The Si substrate dryings process is by substrate with drying nitrogen
Drying, nitrogen gas purity 99.5%.
(3) the dry Si substrates completed are put into vacuum chamber, under ar gas environment, using radiofrequency magnetron sputtering technology, profit
The argon ion bombardment WSe that electricity consumption separates out2Target deposits WSe in Si substrate surfaces2Film layer；The back end vacuum degree of the vacuum chamber
For 5 × 10-5Pascal, vacuum condition are made jointly by mechanical pump and molecular pump two-stage vacuum pump；The WSe2Target is
WSe2Ceramic target, target purity are 99.9%, and the ar pressure maintains 1.0 Pascals constant, and target-substrate distance is 50 millimeters, film
Depositing temperature for 20~25 degrees Celsius, thin film layer thickness is 40-100 nanometers；
(4) it will be covered with WSe2The Si substrates of film layer are put into tube type resistance furnace, in the case where temperature is 100~400 degree Celsius
It anneals in air atmosphere, temperature rate-of-rise is 10 centigrade per minutes, until keeping 30 minutes at 100~400 degrees Celsius, then
Cooled to room temperature obtains WO3-x-WSe2The nano combined heterojunction structures of/Si；
(5) in WO3-x-WSe2The WO of the nano combined heterojunction structures of/Si3-x-WSe2Side mask film covering piece；The mask sheet material
Expect for stainless steel, thickness is 0.1 millimeter, and size is 10 millimeters × 10 millimeters, and aperture size is 5 millimeters × 5 millimeters；Then will cover
It is stamped the WO of mask piece3-x-WSe2The nano combined heterojunction structures of/Si are put into vacuum chamber；The back end vacuum degree of the vacuum chamber is 5
×10-5Pascal, vacuum condition are made jointly by mechanical pump and molecular pump two-stage vacuum pump；Using magnetically controlled DC sputtering skill
Art, using the argon ion bombardment metal Pd target ionized out, in WO3-x-WSe2The nano combined heterojunction structure surface deposition gold of/Si
Electrode before category Pd；The Pd targets are Pd metallic targets, and target purity is 99.9%；The ar pressure maintains 5.0 Pascals not
Become, target-substrate distance is 50 millimeters, and the depositing temperature of film is 20~25 degrees Celsius, and thin film layer thickness is 10-30 nanometers；
(6) by WO3-x-WSe2The SiO at the nano combined heterojunction structure back sides of/Si2Layer is removed with physical method；The physics side
Method files division for file, and file is 0.5 millimeter except thickness；
(7) compacting of metal electrode is completed in electrode and Si substrates before metal Pd respectively, and draws plain conductor, completed
The preparation of device；The metal electrode and conductor material are In and Cu respectively, and the wherein purity of In is 99.5%, electricity before metal Pd
Extremely upper metal In electrode sizes and thickness are respectively 1 millimeter × 1.5 millimeters and 1 millimeter, in Si substrates metal In electrode sizes with
Thickness is respectively 10 millimeters × 10 millimeters and 2 millimeters, and Cu diameter of wire is 0.1 millimeter.
The above-mentioned thin-film device with infrared light sensitlzing effect can be applied in terms of infrared detector is prepared.
The effect further illustrated the present invention with reference to performance measurements：
Fig. 1 is the structure diagram of prepared device infrared light detecting performance measurement.
Fig. 2 is that the I-V curve of prepared device under infrared light illumination and dark condition compares.It is as shown in the figure, prepared
The I-V curve of thin-film device reveals apparent asymmetric feature, this is primarily due to WO3-x-WSe2Laminated film is formed with Si
P-n junction；Under illumination condition, device current significantly increases：When voltage is -1.0 volts, device current is 0.17 milliampere, this
68000% is increased than the electric current (0.25 microampere) under non-illuminated conditions.Features described above shows：Prepared thin-film device performance
Go out apparent infrared light sensitive property.
Fig. 3 is periodic response performance of the device to infrared light of device.Test voltage is -1.5 volts.It is as shown in the figure, logical
The light environment changed residing for it is crossed, prepared thin-film device shows good infrared optical response performance, has response speed
The advantages that (being less than 50 milliseconds) soon.These features further illustrate the thin-film device and can be used to develop new infrared optical detector
Part.
Claims (11)
1. a kind of infrared detector with nano combined heterojunction structure, it is characterised in that：Including metal In point electrodes, metal
Electrode, WO before Pd3-x-WSe2Composite film layer, SiO2Insulating buffer layer, Si single crystal substrates and metal In back electrodes, WO3-x-WSe2
Composite film layer is arranged on Si substrate surfaces, WO3-x-WSe2Laminated film layer thickness is 40-100 nanometers, and electrode exists before metal Pd
WO3-x-WSe2Laminated film layer surface, metal In electrodes suppress electrode and Si substrate surfaces before metal Pd respectively.
2. a kind of infrared detector with nano combined heterojunction structure according to claim 1, it is characterised in that：Institute
Si substrates are stated as n-type Si single crystal substrates, resistivity is 1~3 ohmcm.
3. a kind of infrared detector with nano combined heterojunction structure according to claim 1, it is characterised in that：Institute
State metal In electrodes connection Ni metal conducting wire.
4. a kind of preparation method of the infrared detector with nano combined heterojunction structure, it is characterised in that including following step
Suddenly：
(1) Si substrates are chosen, it is cleaned；
(2) the Si substrates after the completion of cleaning are dried；
(3) the dry Si substrates completed are put into vacuum chamber, under ar gas environment, using radiofrequency magnetron sputtering technology, utilize electricity
The argon ion bombardment WSe separated out2Target deposits WSe in Si substrate surfaces2Film layer；The WSe2Target is WSe2Ceramic target,
Target purity is 99.9%, and the ar pressure maintains 1.0 Pascals constant, and target-substrate distance is 50 millimeters, the depositing temperature of film
For 20~25 degrees Celsius, thin film layer thickness is 40-100 nanometers；
(4) it will be covered with WSe2The Si substrates of film layer are put into tube type resistance furnace, are 100~400 degrees Celsius of lower air gas in temperature
It being heat-treated in atmosphere, temperature rate-of-rise is 10 centigrade per minutes, until keep at 100~400 degrees Celsius 30 minutes, it is then natural
It is cooled to room temperature, obtains WO3-x-WSe2The nano combined heterojunction structures of/Si；
(5) in WO3-x-WSe2The WO of the nano combined heterojunction structures of/Si3-x-WSe2Side mask film covering piece；It will be covered with mask piece
WO3-x-WSe2The nano combined heterojunction structures of/Si are put into vacuum chamber；Using magnetically controlled DC sputtering technology, using the argon ionized out from
Son bombardment metal Pd target, in WO3-x-WSe2Electrode before the nano combined heterojunction structure surface deposited metal Pd of/Si；The Pd targets
Material is Pd metallic targets, and target purity is 99.9%；The ar pressure maintains 5.0 Pascals constant, and target-substrate distance is 50 millimeters, gold
Belong to the depositing temperature of Pd films for 20~25 degrees Celsius, thickness of electrode is 10-30 nanometers before metal Pd；
(6) by WO3-x-WSe2The SiO at the nano combined heterojunction structure back sides of/Si2Layer is removed with physical method；
(7) compacting of metal In electrodes is completed in electrode and Si substrates before metal Pd respectively, and draws Ni metal conducting wire, completed
The preparation of device.
5. a kind of preparation method of infrared detector with nano combined heterojunction structure according to claim 4,
It is characterized in that：In step (1), the Si size of foundation base is 10 millimeters × 10 millimeters；Cleaning process is as follows：Si substrates are existed successively
Repeated ultrasonic is cleaned in high absolute alcohol and acetone soln, and the time span cleaned every time is 180 seconds.
6. a kind of preparation method of infrared detector with nano combined heterojunction structure according to claim 4,
It is characterized in that：In step (2), the Si substrate dryings process is to be dried up substrate with drying nitrogen, nitrogen gas purity 99.5%.
7. a kind of preparation method of infrared detector with nano combined heterojunction structure according to claim 4,
It is characterized in that：In step (3), the back end vacuum degree of the vacuum chamber is 5 × 10-5Pascal, vacuum condition be by mechanical pump and
Molecular pump two-stage vacuum pump is made jointly.
8. a kind of preparation method of infrared detector with nano combined heterojunction structure according to claim 4,
It is characterized in that：In step (5), the mask sheet material is stainless steel, and thickness is 0.1 millimeter, and size is 10 millimeters × 10 millimeters,
Aperture size is 5 millimeters × 5 millimeters；The back end vacuum degree of the vacuum chamber is 5 × 10-5Pascal, vacuum condition are by machinery
Pump and molecular pump two-stage vacuum pump are made jointly.
9. a kind of preparation method of infrared detector with nano combined heterojunction structure according to claim 4,
It is characterized in that：In step (6), the physical method files division for file, and file is 0.5 millimeter except thickness.
10. a kind of preparation method of infrared detector with nano combined heterojunction structure according to claim 4,
It is characterized in that：In step (7), the purity of the raw materials used In of metal In electrodes is 99.5%, metal on electrode before metal Pd
In electrode sizes and thickness are respectively 1 millimeter × 1.5 millimeters and 1 millimeter, and metal In electrode sizes and thickness are divided equally in Si substrates
Wei not be 10 millimeters × 10 millimeters and 2 millimeters, Cu diameter of wire is 0.1 millimeter.
11. a kind of infrared detector with nano combined heterojunction structure as described in claim 1 is preparing infrared acquisition
Application in terms of device.
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