CN104049022A - Molybdenum disulfide/silicon heterogeneous film component with hydrogen sensitivity effect as well as preparation method and application thereof - Google Patents

Molybdenum disulfide/silicon heterogeneous film component with hydrogen sensitivity effect as well as preparation method and application thereof Download PDF

Info

Publication number
CN104049022A
CN104049022A CN201410254110.0A CN201410254110A CN104049022A CN 104049022 A CN104049022 A CN 104049022A CN 201410254110 A CN201410254110 A CN 201410254110A CN 104049022 A CN104049022 A CN 104049022A
Authority
CN
China
Prior art keywords
substrate
mos
heterofilm
molybdenum disulfide
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410254110.0A
Other languages
Chinese (zh)
Inventor
郝兰众
刘云杰
高伟
于濂清
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
China University of Petroleum East China
Original Assignee
China University of Petroleum East China
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by China University of Petroleum East China filed Critical China University of Petroleum East China
Priority to CN201410254110.0A priority Critical patent/CN104049022A/en
Publication of CN104049022A publication Critical patent/CN104049022A/en
Pending legal-status Critical Current

Links

Landscapes

  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

The invention discloses a molybdenum disulfide (MoS2)/silicon (Si) heterogeneous film component with a hydrogen sensitivity effect as well as a preparation method and application thereof. The MoS2/Si heterogeneous film component comprises a Si substrate and a MoS2 film layer which is deposited on the surface of the Si substrate by a direct current magnetron sputtering technology. According to the preparation method, by depositing the MoS2 film on the surface of the Si substrate, the MoS2/Si heterogeneous film component having an H2 sensitivity effect is prepared by virtue of H2 adsorption of the MoS2 film and electrical transport amplification action of a semiconductor heterogeneous interface. Test results show that under the condition of pure H2, when impressed voltage is -5V, the electric current of the MoS2/Si heterogeneous film component is reduced by two orders of magnitude; meanwhile, the heterogeneous film component shows obvious response to H2 concentration change. Compared with an existing semiconductor type H2 sensing component, the MoS2/Si heterogeneous film component has advantages of having obvious H2 response performance, and being good in repeatability, high in reliability and free of dependence on oxygen atmosphere condition and noble metal.

Description

A kind of molybdenum disulfide/silicon heterofilm device with hydrogen sensitlzing effect and its preparation method and application
Technical field
The invention belongs to nanometer semiconductor technology field, relate to semiconductor film film preparation and device fabrication technology, specifically relate to a kind of molybdenum disulfide/silicon heterofilm device with hydrogen sensitlzing effect and its preparation method and application.
Background technology
As a kind of reducibility gas and carrier gas, H 2the fields such as petrochemical industry, electronics, medical treatment, aviation have been widely used in.Meanwhile, H 2as new and effective clean energy resource, also attracted wide attention and large quantity research.But hydrogen molecule is very little, in production, transmission and use procedure, very easily leak.H in air 2when content reaches 5%~75%, under naked light condition, can there is heavy explosion.Therefore, the hydrogen content in air and specific environment is carried out in site measurement fast and accurately, there is great using value, also there is important academic significance simultaneously.Existing research shows, H 2the key of sensor development is research and the preparation of the quick material of hydrogen, and responsive response and the reappearance of the quick material of hydrogen are determining H 2the serviceability of sensor.In recent years, both at home and abroad to H 2the development of sensor mainly concentrates on the H such as semi-conductor type, electrothermic type, optical type, galvanochemistry type 2sensor.At various types of H 2in sensor, semi-conductor type H 2sensor (comprising MOS type and semiconductor Schottky type) has the plurality of advantages such as preparation technology is simple, the response time is short, reproducible, has now become the H being most widely used 2one of sensor.But existing semi-conductor type H of while 2sensor still exists the development that some shortcomings part is restricting it: MOS type H 2sensor need to be worked under aerobic conditions, and this has limited its usable range greatly; Schottky type H 2sensor needs noble metal (Pt, Pd etc.) carrier, and this causes its cost significantly to increase.For this reason, various novel semiconductor materials are constantly applied to novel H 2the development of sensor, wherein MoS 2material more merits attention.
MoS 2, be commonly called brightness molybdenum, at occurring in nature rich content.According to statistics, global molybdenum reserves are about 1,900 ten thousand tons, and the molybdenum ore resource of China is also quite abundant, and total reserves is about more than 800 ten thousand tons, is only second to the U.S. and occupies the 2nd, the world.MoS 2be typical layer structure, each unit is all " sandwich " structures of S-Mo-S.With weak Van der Waals force, combine between layers, there is larger space; In layer, with covalent bond, be closely linked, each Mo atom is surrounded by six S atoms, is triangular prism column, exposes a lot of Mo-S faceted pebbles, can be used as catalytic activity and gas adsorption site.Therefore, MoS 2in development of new gas sensor field, there is wide application prospect in material.The calculated results of having reported shows: MoS 2easily to H 2produce absorption, and cause its resistance generation significant change.This result of calculation shows, MoS 2can be used for developing H 2sensor, but the current report that there is no correlation test result at home and abroad.
Summary of the invention
The object of the present invention is to provide a kind of preparation method and application with molybdenum disulfide/silicon heterofilm device and this molybdenum disulfide/silicon heterofilm device of hydrogen sensitlzing effect.
The technology used in the present invention solution is:
Molybdenum disulfide/silicon heterofilm device with hydrogen sensitlzing effect, comprises Si substrate and MoS 2thin layer, MoS 2thin layer is arranged on Si substrate surface.
Preferably, described Si substrate is p-type Si single crystalline substrate, and resistivity is 1~10 Ω cm -1; Described MoS 2thin layer thickness is 30~50nm.
Preferably, described Si substrate surface is also coated with mask sheet, and mask sheet is positioned at MoS 2between thin layer and Si substrate.
Preferably, described Si substrate and MoS 2on thin layer, be suppressed with metal electrode, metal electrode connects wire.
A preparation method with molybdenum disulfide/silicon heterofilm device of hydrogen sensitlzing effect, comprises the following steps:
(1) choose Si substrate, it is cleaned, then adopt chemical corrosion method to remove and clean rear Si substrate surface oxide layer;
(2) to removing the Si substrate of surface oxide layer, be dried, then coverage mask sheet;
(3) the Si substrate of coverage mask sheet is put into vacuum chamber, under Ar compression ring border, adopt magnetically controlled DC sputtering technology, utilize the Ions Bombardment MoS ionizing out 2target, at Si substrate surface deposition MoS 2thin layer, makes MoS 2/ Si heterofilm;
(4) respectively at MoS 2the MoS of/Si heterofilm 2on film and Si substrate, complete the compacting of metal electrode, and draw wire, make MoS 2/ Si heterofilm device.
Preferably, in step (1), described Si substrate is p-type Si single crystalline substrate, is of a size of 10 * 10mm, and resistivity is 1~10 Ω cm -1; Cleaning process is as follows: by the repeated ultrasonic cleaning in high absolute alcohol and acetone soln successively of Si substrate, each time span of cleaning is 180s; , the removal process of described Si substrate surface oxide layer is as follows: Si substrate is soaked to 50~70s in hydrofluoric acid solution, and the mass concentration of hydrofluoric acid solution is 3~5%.
Preferably, described in step (2), Si substrate dry run is with drying nitrogen, substrate to be dried up, and nitrogen gas purity is 99.5%; Described mask sheet material is molybdenum, and thickness is 0.1mm, is of a size of 10 * 10mm, and aperture size is 5 * 5mm.
Preferably, in step (3), the back end vacuum tightness of described vacuum chamber is 5 * 10 -5pa, vacuum condition is jointly to be made by mechanical pump and molecular pump two-stage vacuum pump; Described MoS 2target is MoS 2pottery rake, target purity is 99.9%, and it is constant that described Ar gas air pressure maintains 1.0Pa, and target-substrate distance is 50mm, and the depositing temperature of film is 100 ℃, thin layer thickness is 30~50nm.
Preferably, in step (4), described metal electrode and conductor material are respectively In and Cu, and wherein the purity of In is 99.5%, and metal electrode diameter and thickness are 3mm, and Cu diameter of wire is 0.1mm.
Above-mentioned molybdenum disulfide/silicon heterofilm device with hydrogen sensitlzing effect can be at preparation H 2senser element aspect is applied.
Useful technique effect of the present invention is:
The present invention is by depositing MoS at Si substrate surface 2film, utilizes MoS 2film is to H 2suction-operated and the electronic transport amplification at heterogeneous semiconductor interface, develop and have H 2the MoS of sensitlzing effect 2/ Si heterofilm device.Test result shows: at pure H 2under condition, when impressed voltage be-during 5V, MoS 2the electric current of/Si heterofilm device reduces two orders of magnitude; Meanwhile, this heterofilm device is to H 2concentration change shows obvious response characteristic.With current existing semi-conductor type H 2senser element is compared, and the present invention has got rid of the dependence to oxygen atmosphere condition and noble metal, and has H 2response performance is remarkable, reproducible, high reliability, and preparation technology is simple, for preparing novel H 2senser element provides a kind of good semiconductor material and device architecture, at H 2field of detecting has more wide application prospect.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is further illustrated:
Fig. 1 is prepared MoS 2the structural representation that/Si heterofilm device gas sensitization performance is measured.
Fig. 2 is without H 2with pure H 2prepared MoS under condition 2the I-V curve comparison of/Si heterofilm device.
Fig. 3 is prepared MoS 2/ Si heterofilm device is to pure H 2response performance.
Fig. 4 is prepared MoS 2/ Si heterofilm device is to variable concentrations H 2response performance.
Embodiment
The present invention utilizes magnetically controlled DC sputtering technology, in Si Semiconductor substrate, deposits MoS 2thin layer, thus MoS formed 2/ Si heterojunction.When being exposed to H 2in atmosphere, due to H 2produce absorption, MoS 2charge carrier and the Fermi level of film change, and this causes MoS 2the junction resistance generation significant change of/Si heterojunction, thus make prepared MoS 2/ Si heterojunction is to H 2show obvious response performance.
Below to MoS 2structure, preparation method and the application of/Si heterofilm device are elaborated.
MoS of the present invention 2/ Si heterofilm structure, comprises MoS 2semiconductor film layer and Si Semiconductor substrate, MoS 2thin layer is arranged on Si substrate surface.Si substrate is p-type Si single crystalline substrate, and resistivity is 1~10 Ω cm -1, crystalline orientation is (100) orientation.Described MoS 2thin layer is to adopt magnetically controlled DC sputtering deposition techniques on Si substrate, and thickness is 30~50nm.
Say further, described Si substrate surface is also coated with mask sheet, and mask sheet is positioned at MoS 2between thin layer and Si substrate, mask sheet material therefor is molybdenum, and mask sheet thickness is 0.1mm, is of a size of 10 * 10mm, and aperture size is 5 * 5mm.
Further, at MoS 2the MoS of/Si heterofilm 2difference pressed metal electrode on thin layer and Si substrate, and draw wire, obtain MoS 2/ Si heterofilm device.
Above-mentioned MoS 2the preparation method of/Si heterofilm device, specifically comprises the following steps:
(1) choose Si substrate, it is cleaned, then adopt chemical corrosion method to remove and clean rear Si substrate surface oxide layer; Described Si substrate is p-type Si single crystalline substrate, is of a size of 10 * 10mm, and resistivity is 1~10 Ω cm -1; Cleaning process is as follows: by the repeated ultrasonic cleaning in high absolute alcohol and acetone soln successively of Si substrate, each time span of cleaning is 180s; , the removal process of described Si substrate surface oxide layer is as follows: Si substrate is soaked to 50~70s in hydrofluoric acid solution, and preferred 60s, the mass concentration of hydrofluoric acid solution is 3~5%, as specifically can be 3%, 4% or 5%.
(2) to removing the Si substrate of surface oxide layer, be dried, then coverage mask sheet; Described Si substrate dry run is with drying nitrogen, substrate to be dried up, and nitrogen gas purity is 99.5%; Described mask sheet material is molybdenum, and thickness is 0.1mm, is of a size of 10 * 10mm, and aperture size is 5 * 5mm.
(3) the Si substrate of coverage mask sheet is put into vacuum chamber, under Ar compression ring border, adopt magnetically controlled DC sputtering technology, utilize the Ar Ions Bombardment MoS ionizing out 2target, at Si substrate surface deposition MoS 2thin layer, makes MoS 2/ Si heterofilm; The back end vacuum tightness of described vacuum chamber is 5 * 10 -5pa, vacuum condition is jointly to be made by mechanical pump and molecular pump two-stage vacuum pump; Described MoS 2target is MoS 2pottery rake, target purity is 99.9%, and it is constant that described Ar gas air pressure maintains 1.0Pa, and target-substrate distance is 50mm, and the depositing temperature of film is 100 ℃, thin layer thickness is 30~50nm.
(4) respectively at MoS 2the MoS of/Si heterofilm 2on film and Si substrate, complete the compacting of metal electrode, and draw wire, make MoS 2/ Si heterofilm device.Described metal electrode and conductor material are respectively In and Cu, and wherein the purity of In is 99.5%, and metal electrode diameter and thickness are 3mm, and Cu diameter of wire is 0.1mm.
Above-mentioned molybdenum disulfide/silicon heterofilm device with hydrogen sensitlzing effect can be at preparation H 2senser element aspect is applied.
Below in conjunction with performance measurement result, further illustrate effect of the present invention:
Fig. 1 is prepared MoS 2the structural representation that/Si heterofilm device gas sensitization performance is measured.
Fig. 2 is without H 2with pure H 2prepared MoS under condition 2the I-V curve comparison of/Si heterofilm device.As shown in the figure, prepared MoS 2the I-V curve table of/Si heterofilm device reveals obvious asymmetric feature.At pure H 2under condition, when voltage be-during 5V, the electric current of heterofilm is 4.1 * 10 -3mA, this is than without H 2electric current (4.5 * 10 under condition -1mA) reduce two orders of magnitude.Above-mentioned feature shows: prepared MoS 2/ Si heterofilm device shows obvious H 2sensitive property.
Fig. 3 is prepared MoS 2/ Si heterofilm device is to pure H 2response performance.As shown in the figure, by changing its residing atmospheric condition, prepared MoS 2/ Si heterofilm device shows good H 2response performance, has in stable condition, repeated advantages of higher.
Fig. 4 is prepared MoS 2/ Si heterofilm device is to variable concentrations H 2response performance.As shown in the figure, prepared MoS 2/ Si heterofilm device is to different low concentration H 2all shown obvious response performance.Work as H 2when concentration occurs to change a little, prepared MoS 2the inverse current of/Si heterofilm device changes fast.This further illustrates such heterofilm device and can be used to development of new H 2senser element.

Claims (10)

1. molybdenum disulfide/silicon heterofilm device with hydrogen sensitlzing effect, is characterized in that: comprise Si substrate and MoS 2thin layer, MoS 2thin layer is arranged on Si substrate surface.
2. a kind of molybdenum disulfide/silicon heterofilm device with hydrogen sensitlzing effect according to claim 1, is characterized in that: described Si substrate is p-type Si single crystalline substrate, and resistivity is 1~10 Ω cm -1; Described MoS 2thin layer thickness is 30~50nm.
3. a kind of molybdenum disulfide/silicon heterofilm device with hydrogen sensitlzing effect according to claim 1, is characterized in that: described Si substrate surface is also coated with mask sheet, and mask sheet is positioned at MoS 2between thin layer and Si substrate.
4. a kind of molybdenum disulfide/silicon heterofilm device with hydrogen sensitlzing effect according to claim 1, is characterized in that: described Si substrate and MoS 2on thin layer, be suppressed with metal electrode, metal electrode connects wire.
5. a preparation method with molybdenum disulfide/silicon heterofilm device of hydrogen sensitlzing effect, is characterized in that comprising the following steps:
(1) choose Si substrate, it is cleaned, then adopt chemical corrosion method to remove and clean rear Si substrate surface oxide layer;
(2) to removing the Si substrate of surface oxide layer, be dried, then coverage mask sheet;
(3) the Si substrate of coverage mask sheet is put into vacuum chamber, under Ar compression ring border, adopt magnetically controlled DC sputtering technology, utilize the Ions Bombardment MoS ionizing out 2target, at Si substrate surface deposition MoS 2thin layer, makes MoS 2/ Si heterofilm;
(4) respectively at MoS 2the MoS of/Si heterofilm 2on film and Si substrate, complete the compacting of metal electrode, and draw wire, make MoS 2/ Si heterofilm device.
6. a kind of preparation method with molybdenum disulfide/silicon heterofilm device of hydrogen sensitlzing effect according to claim 5, it is characterized in that: in step (1), described Si substrate is p-type Si single crystalline substrate, is of a size of 10 * 10mm, and resistivity is 1~10 Ω cm -1; Cleaning process is as follows: by the repeated ultrasonic cleaning in high absolute alcohol and acetone soln successively of Si substrate, each time span of cleaning is 180s; , the removal process of described Si substrate surface oxide layer is as follows: Si substrate is soaked to 50~70s in hydrofluoric acid solution, and the mass concentration of hydrofluoric acid solution is 3~5%.
7. a kind of preparation method with molybdenum disulfide/silicon heterofilm device of hydrogen sensitlzing effect according to claim 5, it is characterized in that: described in step (2), Si substrate dry run is with drying nitrogen, substrate to be dried up, nitrogen gas purity is 99.5%; Described mask sheet material is molybdenum, and thickness is 0.1mm, is of a size of 10 * 10mm, and aperture size is 5 * 5mm.
8. a kind of preparation method with molybdenum disulfide/silicon heterofilm device of hydrogen sensitlzing effect according to claim 5, is characterized in that: in step (3), the back end vacuum tightness of described vacuum chamber is 5 * 10 -5pa, vacuum condition is jointly to be made by mechanical pump and molecular pump two-stage vacuum pump; Described MoS 2target is MoS 2pottery rake, target purity is 99.9%, and it is constant that described Ar gas air pressure maintains 1.0Pa, and target-substrate distance is 50mm, and the depositing temperature of film is 100 ℃, thin layer thickness is 30~50nm.
9. a kind of preparation method with molybdenum disulfide/silicon heterofilm device of hydrogen sensitlzing effect according to claim 5, it is characterized in that: in step (4), described metal electrode and conductor material are respectively In and Cu, wherein the purity of In is 99.5%, metal electrode diameter and thickness are 3mm, and Cu diameter of wire is 0.1mm.
10. a kind of molybdenum disulfide/silicon heterofilm device with hydrogen sensitlzing effect as claimed in claim 1 is at preparation H 2the application of senser element aspect.
CN201410254110.0A 2014-06-10 2014-06-10 Molybdenum disulfide/silicon heterogeneous film component with hydrogen sensitivity effect as well as preparation method and application thereof Pending CN104049022A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410254110.0A CN104049022A (en) 2014-06-10 2014-06-10 Molybdenum disulfide/silicon heterogeneous film component with hydrogen sensitivity effect as well as preparation method and application thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410254110.0A CN104049022A (en) 2014-06-10 2014-06-10 Molybdenum disulfide/silicon heterogeneous film component with hydrogen sensitivity effect as well as preparation method and application thereof

Publications (1)

Publication Number Publication Date
CN104049022A true CN104049022A (en) 2014-09-17

Family

ID=51502132

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410254110.0A Pending CN104049022A (en) 2014-06-10 2014-06-10 Molybdenum disulfide/silicon heterogeneous film component with hydrogen sensitivity effect as well as preparation method and application thereof

Country Status (1)

Country Link
CN (1) CN104049022A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465844A (en) * 2014-11-27 2015-03-25 中国石油大学(华东) MoS2/Si p-n junction solar cell device and preparation method thereof
CN104614403A (en) * 2015-01-22 2015-05-13 江西师范大学 Sensor, forming method of sensor, and method for defecting gas
CN104792830A (en) * 2015-05-15 2015-07-22 哈尔滨工业大学 Graphene/molybdenum disulfide compounding-based gas sensitive material and preparation method thereof
CN105021683A (en) * 2015-06-05 2015-11-04 东南大学 Manufacturing method for molybdenum disulfide field effect transistor for biomolecular detection
CN105158306A (en) * 2015-07-09 2015-12-16 济南大学 Preparation method of gas sensor for volatile organic matter detection
CN105928986A (en) * 2016-04-11 2016-09-07 温州大学 Silicon carbon based high temperature hydrogen sensor and preparation method thereof
CN109682863A (en) * 2018-12-10 2019-04-26 华中科技大学 Gas sensor and preparation method thereof based on TMDCs-SFOI hetero-junctions
CN109935654A (en) * 2019-03-21 2019-06-25 电子科技大学 A kind of silicon substrate molybdenum disulfide heterojunction photovoltaic sensor and preparation method
CN113644138A (en) * 2021-06-21 2021-11-12 西安电子科技大学 Single layer MoS2-Si-based tunneling diode and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6218208B1 (en) * 1999-07-02 2001-04-17 National Science Council Fabrication of a multi-structure ion sensitive field effect transistor with a pH sensing layer of a tin oxide thin film
CN101334413A (en) * 2008-07-11 2008-12-31 中国石油大学(华东) Carbon thin film /silicon hetero-junction material possessing alcohol gas sensitive effect and method for making same
CN102012385A (en) * 2010-09-16 2011-04-13 中国石油大学(华东) Palladium/carbon/silicon heterojunction material with hydrogen sensitive effect

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6218208B1 (en) * 1999-07-02 2001-04-17 National Science Council Fabrication of a multi-structure ion sensitive field effect transistor with a pH sensing layer of a tin oxide thin film
CN101334413A (en) * 2008-07-11 2008-12-31 中国石油大学(华东) Carbon thin film /silicon hetero-junction material possessing alcohol gas sensitive effect and method for making same
CN102012385A (en) * 2010-09-16 2011-04-13 中国石油大学(华东) Palladium/carbon/silicon heterojunction material with hydrogen sensitive effect

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
QU YUE等: ""Adsorption of gas molecules on monolayer MoS2 and effect of applied electric field"", 《NANOSCALE RESEARCH LETTERS》 *
何杰等: ""热沉积法制备纳米二硫化钼薄膜及其光电特性研究"", 《物理实验》, vol. 33, no. 9, 30 September 2013 (2013-09-30) *
张文钲: ""发掘中的二硫化钼新用途"", 《中国钼业》, vol. 21, no. 23, 30 June 1997 (1997-06-30), pages 130 - 132 *
林拉等: ""退火温度对MoS2纳米薄膜特性影响研究"", 《HANS JOURNAL OF NANOTECHNOLOGY》, 31 August 2013 (2013-08-31) *
王吉会等: ""沉积条件对MoS2薄膜生长特性的影响"", 《兵器材料科学与工程》 *

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465844A (en) * 2014-11-27 2015-03-25 中国石油大学(华东) MoS2/Si p-n junction solar cell device and preparation method thereof
CN104614403B (en) * 2015-01-22 2017-05-24 江西师范大学 Sensor, forming method of sensor, and method for defecting gas
CN104614403A (en) * 2015-01-22 2015-05-13 江西师范大学 Sensor, forming method of sensor, and method for defecting gas
CN104792830A (en) * 2015-05-15 2015-07-22 哈尔滨工业大学 Graphene/molybdenum disulfide compounding-based gas sensitive material and preparation method thereof
CN104792830B (en) * 2015-05-15 2017-06-16 哈尔滨工业大学 The preparation method of the gas sensitive material being combined based on Graphene/molybdenum bisuphide
CN105021683B (en) * 2015-06-05 2017-09-15 东南大学 Towards the preparation method of the molybdenum disulfide field-effect transistor of biomolecule detection
CN105021683A (en) * 2015-06-05 2015-11-04 东南大学 Manufacturing method for molybdenum disulfide field effect transistor for biomolecular detection
CN105158306B (en) * 2015-07-09 2016-06-22 济南大学 A kind of preparation method of the gas sensor for volatile organic matter detection
CN105158306A (en) * 2015-07-09 2015-12-16 济南大学 Preparation method of gas sensor for volatile organic matter detection
CN105928986A (en) * 2016-04-11 2016-09-07 温州大学 Silicon carbon based high temperature hydrogen sensor and preparation method thereof
CN105928986B (en) * 2016-04-11 2018-08-31 温州大学 A kind of Si carbon-base high-temperature hydrogen sensor and preparation method thereof
CN109682863A (en) * 2018-12-10 2019-04-26 华中科技大学 Gas sensor and preparation method thereof based on TMDCs-SFOI hetero-junctions
CN109935654A (en) * 2019-03-21 2019-06-25 电子科技大学 A kind of silicon substrate molybdenum disulfide heterojunction photovoltaic sensor and preparation method
CN113644138A (en) * 2021-06-21 2021-11-12 西安电子科技大学 Single layer MoS2-Si-based tunneling diode and preparation method thereof

Similar Documents

Publication Publication Date Title
CN104049022A (en) Molybdenum disulfide/silicon heterogeneous film component with hydrogen sensitivity effect as well as preparation method and application thereof
CN109900750B (en) Structural design for improving sensitivity of MoS2 film field effect transistor-based gas sensor
CN104198532A (en) Molybdenum disulfide thin film device with ammonia sensitive effect as well as preparation method and application thereof
CN104374486B (en) A kind of flexibility temperature sensor and preparation method thereof based on graphene nano wall
CN104297320B (en) A kind of organic monolayer thin film field-effect gas sensor and preparation method
CN105866215B (en) A kind of Organic Thin Film Transistors gas sensor and preparation method thereof
CN104502421A (en) Room-temperature P-N-P heterostructure hydrogen sensor and preparation method thereof
CN103199020B (en) Based on preparation method and the detection method of the liquid grid-type graphene field effect pipe of PI
CN101363810A (en) Gas-sensitive sensor and method for making same
CN103224232B (en) Preparation method of graphite nanometer hole
CN102636544A (en) Multilayer thin film OTFT (organic thin film transistor) formaldehyde gas sensor and preparation method thereof
CN113241376B (en) Full-surrounding channel field effect transistor, preparation method and application
CN109682866A (en) Carbon nano-tube gas-sensitive sensors based on phosphomolybdic acid molecular modification
CN105136893A (en) Thin film transistor biosensor and preparation method thereof
CN102103119A (en) Gas sensor and preparation method thereof
CN111307876A (en) Gas sensor for detecting nitrogen dioxide and preparation method thereof
CN104865305A (en) Hydrogen-terminated diamond field effect transistor biosensor adopting three-dimensional structure as well as preparation method of biosensor
CN105301061A (en) Self-assembled latticed alpha-MoO3 nanoribbon gas-sensitive sensor
CN110261461B (en) Preparation method of ultrathin heterojunction composite film gas sensor based on OFETs
CN101196489A (en) Organic thin film triode sensor, its production method and usage
CN114242892A (en) Organic hot electron transistor, preparation method thereof and LUMO energy level detection method
CN106206829B (en) A kind of visible-light detector based on additive Mn copper nitride film
CN109187660A (en) A kind of semi-conductor type hydrogen gas sensor based on graphene reticular structure
CN111505089B (en) Sulfur dioxide sensor based on organic field effect transistor and preparation method thereof
CN113640361A (en) Grid sensitive FET gas sensor array for trace formaldehyde gas detection and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20140917