CN102103119A - Gas sensor and preparation method thereof - Google Patents
Gas sensor and preparation method thereof Download PDFInfo
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- CN102103119A CN102103119A CN2009102557038A CN200910255703A CN102103119A CN 102103119 A CN102103119 A CN 102103119A CN 2009102557038 A CN2009102557038 A CN 2009102557038A CN 200910255703 A CN200910255703 A CN 200910255703A CN 102103119 A CN102103119 A CN 102103119A
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Abstract
The invention belongs to the technical field of sensors, and in particular relates to a gas sensor and a preparation method thereof. The sensor comprises a gate electrode, a gate insulating layer, a source electrode and a leakage electrode, and is characterized in that a functional layer is arranged on the gate insulating layer; the source electrode and the leakage electrode are respectively connected on the functional layer; or the source electrode and the leakage electrode are respectively connected on the gate insulating layer; the functional layer is formed on the gate insulating layer containing partial surfaces of the source electrode and the leakage electrode at the two sides and exposing out of the source electrode and the leakage electrode; and fluoride is taken as a raw material in the gate insulating layer. In the invention, organic semiconductor materials are used as the functional layer of a device instead of inorganic semiconductor materials; the fluoride is adopted as the insulating layer of the device to prepare an organic thin film transistor gas sensor with a bottom-gate top contact and bottom-gate bottom contact structure. Evaporation can be completed at one time in a vacuum chamber by the device, thus greatly simplifying the manufacturing process of the device, and shortening the manufacturing period of the device.
Description
Technical field
The invention belongs to sensor technical field, particularly a kind of gas sensor and preparation method thereof.
Background technology
1975, I.
At first develop inorganic air-sensitive field effect transistor, he utilizes the detection of the catalysis characteristics realization of palladium material to airborne micro-hydrogen as gate electrode by evaporation one deck palladium film on the insulated gate of field effect transistor.After this, the report about grid MOS field effect type gas sensors such as palladium, platinum and polymkeric substance occurs in succession.Along with to the going deep into of device architecture parameter and characteristic research, the quality of inorganic field effect type gas sensor has had large increase.Patent ZL96102646.4 discloses film modified outstanding gate field-effect type gas sensor of a kind of LB that detects nitrogen dioxide and preparation method thereof.This invention has designed a kind of outstanding gate field-effect type gas sensor of modifying with unimolecular film, and is film modified in whole tube core, works thereby reach gas sensor normal temperature under, and sensitivity is higher, selectivity good, can detect the purpose of low concentration gas.Although traditional inorganic MOS field effect type gas sensitivity height exists complex manufacturing technology, the long and very high adverse factors of cost of fabrication cycle.
Organic film MOSFET becomes the object that more and more research institutions competitively research and develop as the basis of organic electronic.Organic transistor since preparation cost is low, processing technology is simple, selection range is broad, mechanical property is soft and with large scale integrated circuit characteristics such as compatibility mutually, be specially adapted to the consumer electronics product of low cost, large-area applications.At home and abroad under scientist's the effort, the performance of organic semiconducting materials has reached the level of α-Si: H at present, this has promoted it greatly at electronic applications, such as the application power of aspects such as active matrix liquid crystal demonstration, active matrix OLED demonstration, smart card, large tracts of land sensor array.
Gas sensor is widely used as the harmful gas in the on-line monitoring workplace, as carbon monoxide, methane, sulphuric dioxide, oxides of nitrogen and aldehydes etc.The OTFT gas sensor is as an important branch of sensor, advantages such as that gas collection body sensor high sensitivity, high selectivity and film transistor device are easy to is integrated, microminiaturization are in one, make it intelligent, online, in real time so that have bigger advantage at aspects such as body analyses.But, to compare in the applied research of aspects such as active matrix liquid crystal demonstration with organic film MOSFET, the research of organic field-effect tube gas sensor but very lags behind.Therefore, along with people increase day by day to the concern of environmental quality, food hygiene, carrying out the applied research of organic field-effect tube in gas sensor is one of most important brainstorm subject in the present organic film MOSFET research.
Summary of the invention
The objective of the invention is to overcome the shortcoming of traditional inorganic thin film field effect transistor, a kind of gas sensor and preparation method thereof is provided.
Gas sensor comprises gate electrode 1, gate insulation layer 2, source electrode 4 and drain electrode 5 compositions, establishes functional layer 3 on the gate insulation layer 2, and source electrode 4 and drain electrode 5 are connected to functional layer 3; Perhaps source electrode 4 and drain electrode 5 are connected to gate insulation layer 2, comprise the part surface of source, both sides electrode 4, drain electrode 5 and be exposed to source electrode 4 and drain electrode 5 between gate insulation layer 2 on be formed with functional layer 3; Gate insulation layer 2 is a raw material with the fluoride, and thickness is the 200-350 nanometer.
Described fluoride is calcium fluoride, strontium fluoride or barium fluoride.Described fluoride is a calcium fluoride.Described functional layer (3) is with p type organic semiconducting materials CuPc or n type organic semiconducting materials 1,2,3,4,8,9,10,11,15,16,17,18,22,23,24, and 25-fluorine substituted phthalocyanine copper is raw material.
The preparation method at first cleans substrate, and dry back is stand-by; With on the dried substrate under the vacuum condition of 10-4Pa evaporation gate electrode, evaporation gate insulation layer, functional layer, then vapor deposition source electrode and drain electrode successively on gate electrode then.
With on the dried substrate 10
-4Evaporation gate electrode under the vacuum condition of Pa, evaporation gate insulation layer, source electrode and drain electrode, then evaporation functional layer successively on gate electrode then.
Speed is the 0.3-0.5 nm/sec during described evaporation gate electrode, and thickness is the 150-300 nanometer; Speed is the 0.3-0.6 nm/sec during evaporation insulation course, and thickness is the 200-350 nanometer; Speed is the 0.1-0.3 nm/sec during evaporation functional layer, and thickness is the 150-300 nanometer; Speed is the 0.5-0.8 nm/sec when vapor deposition source electrode and drain electrode, and source electrode and drain electrode thickness are respectively the 150-300 nanometer.The method of the substrate drying after the described cleaning dries up or vacuum drying for adopting nitrogen.
Principle: the OTFT gas sensor is a gas sensitive with the conducting polymer of functional layer, when work, produce the electronics give and accept relation between the gas of gas sensor absorption and the semiconducting polymer, learn the information that the detected gas molecule exists by detecting the variation that causes the saturated source-drain current of device (the perhaps field-effect mobility of functional layer conducting polymer materials) that interacts.
The advantage that the present invention had:
The present invention utilizes organic semiconducting materials to replace the functional layer of inorganic semiconductor material as device, and adopts the insulation course of fluoride as device, has prepared the OTFT gas sensor of bottom grating structure.Device all reaches the performance index of inorganic product in the market to the sensitivity and the response speed of gases such as ammonia, nitrogen dioxide, and the response time was less than 60 seconds.Disposable the finishing of entire device evaporation in vacuum chamber simplified the manufacture craft of device greatly, reduced the fabrication cycle of device.In addition, device is easy to integrated, microminiaturized.
Description of drawings
Fig. 1 is a bottom gate top contact structure gas sensor synoptic diagram of the present invention, among the figure, and the 1st, grid, the 2nd, insulation course, the 3rd, functional layer, the 4th, source electrode, the 5th, drain electrode.
Fig. 2 is a contact structures gas sensor synoptic diagram at the bottom of the bottom gate of the present invention, among the figure, and the 1st, grid, the 2nd, insulation course, the 3rd, functional layer, the 4th, source electrode, the 5th, drain electrode.
Fig. 3 for gas sensor device of the present invention in a vacuum with the difference curve that is exposed to saturated source-drain current in the nitrogen dioxide gas.
Embodiment
Embodiment 1
Gas sensor (referring to Fig. 1) comprises gate electrode 1, gate insulation layer 2, source electrode 4 and drain electrode 5 compositions, establishes functional layer 3 on the gate insulation layer 2, and source electrode 4 and drain electrode 5 are connected to functional layer 3; Gate insulation layer 2 is a raw material with calcium fluoride, and thickness is 200 nanometers.
The preparation method:
The glass sheet that adopts high-flatness cleans the back and dries up substrate with nitrogen as substrate; Substrate is put into 10
-4In the supervacuum chamber of Pa, at first evaporation one deck 200 nanometer thickness aluminum metal films are as gate electrode 1, and evaporation speed is 0.4 nm/sec; Then the evaporation calcium fluoride material is made insulation course 2, and evaporation speed is 0.3 nm/sec, and thickness is 200 nanometers; Evaporation 200 nanometer thickness 1,2,3,4,8,9,10,11,15,16,17,18,22,23,24 then, 25-fluorine substituted phthalocyanine copper is as functional layer 3, and rate controlled is in 0.1 nm/sec; Evaporation 150 nanometer thickness calcium and gold leak 5 electrodes as source 4/ respectively at last, and evaporation speed is the 0.5-0.8 nm/sec; Promptly get gas sensor.
Embodiment 2:
Gas sensor (referring to Fig. 2), comprise gate electrode 1, gate insulation layer 2, source electrode 4 and drain electrode 5 compositions, source electrode 4 and drain electrode 5 are connected to gate insulation layer 2, comprise the part surface of source, both sides electrode 4, drain electrode 5 and be exposed to source electrode 4 and drain electrode 5 between gate insulation layer 2 on be formed with functional layer 3; Gate insulation layer 2 is a raw material with the strontium fluoride, and thickness is 300 nanometers.
The preparation method:
The glass sheet that adopts high-flatness cleans the back and dries up substrate with nitrogen as substrate; Substrate is put into 10
-4In the supervacuum chamber of Pa, at first evaporation one deck 150 nanometer thickness aluminum metal films are as gate electrode 1, and evaporation speed is 0.3 nm/sec; Then evaporation strontium fluoride material is made insulation course 2, and evaporation speed is 0.4 nm/sec, and thickness is 300 nanometers; Evaporation 150 nanometer thickness organic semiconducting materials CuPcs are as functional layer 3 then, and rate controlled is in 0.2 nm/sec; 5 electrodes are leaked in last evaporation 200 nanometer thickness gold source 4/, and evaporation speed is the 0.5-0.8 nm/sec; Promptly get gas sensor.
Embodiment 3:
The polyester film that adopts high-flatness cleans the back and dries up substrate with nitrogen as substrate; Substrate is put into 10
-4In the supervacuum chamber of Pa, at first evaporation one deck 180 nanometer thickness aluminum metal films are as gate electrode 1, and evaporation speed is 0.5 nm/sec; Then evaporation barium fluoride material is made insulation course 2, and evaporation speed is 0.3 nm/sec, and thickness is 280 nanometers; Evaporation 200 nanometer thickness 1,2,3,4,8,9,10,11,15,16,17,18,22,23,24 then, 25-fluorine substituted phthalocyanine copper is as functional layer 3, and rate controlled is in 0.1 nm/sec; Evaporation 300 nanometer thickness calcium and gold leak 5 electrodes as source 4/ respectively at last, and evaporation speed is the 0.5-0.8 nm/sec; Promptly get gas sensor.
Embodiment 4:
The glass sheet that adopts high-flatness cleans the back and dries up substrate with nitrogen as substrate; Substrate is put into 10
-4In the supervacuum chamber of Pa, at first evaporation one deck 200 nanometer thickness aluminum metal films are as gate electrode 1, and evaporation speed is the 0.3-0.5 nm/sec; Then evaporation barium fluoride material is made insulation course 2, and evaporation speed is 0.3 nm/sec, and thickness is 300 nanometers; Evaporation 300 nanometer thickness calcium and gold leak 5 electrodes as source 4/ respectively then, and evaporation speed is the 0.5-0.8 nm/sec; Last evaporation 300 nanometer thickness 1,2,3,4,8,9,10,11,15,16,17,18,22,23,24,25-fluorine substituted phthalocyanine copper is as functional layer 3, and rate controlled is in 0.2 nm/sec; Promptly get gas sensor.
Application examples
The gained gas sensor is exposed in the variable concentrations nitrogen dioxide gas, gas molecule is adsorbed on fluorine substituted phthalocyanine copper sensitive membrane surface, electronics is transferred on the nitrogen dioxide gas molecule of short of electricity from fluorine substituted phthalocyanine copper molecule, cause the electronic carrier number in the n N-type semiconductor N material to descend, the source-drain current value of device reduces.Along with the prolongation of time, the gas flow of fluorine substituted phthalocyanine copper thin film adsorbs is many more, and the number that its electronics reduces increases, and the source-drain current value of device is low more.The difference curve of source-drain current when Fig. 3 has provided saturated source-drain current in the 200-450ppm variable concentrations nitrogen dioxide gas and worked in a vacuum; Its functional layer is a p type organic semiconducting materials CuPc when measuring ammonia in addition.
Claims (7)
1. a gas sensor comprises gate electrode (1), gate insulation layer (2), source electrode (4) and drain electrode (5) composition, and it is characterized in that: establish functional layer (3) on the gate insulation layer (2), source electrode (4) and drain electrode (5) are connected to functional layer (3); Perhaps source electrode (4) and drain electrode (5) are connected to gate insulation layer (2), comprise the part surface of source, both sides electrode (4), drain electrode (5) and be exposed to source electrode (4) and drain electrode (5) between gate insulation layer (2) on be formed with functional layer (3); Gate insulation layer (2) is raw material with the fluoride, and thickness is the 200-350 nanometer.
2. by the described gas sensor of claim 1, it is characterized in that: described fluoride is calcium fluoride, strontium fluoride or barium fluoride.
3. by the described gas sensor of claim 1, it is characterized in that: described fluoride is a calcium fluoride.
4. by the described gas sensor of claim 1, it is characterized in that: described functional layer (3) is with p type organic semiconducting materials CuPc or n type organic semiconducting materials 1,2,3,4,8,9,10,11,15,16,17,18,22,23,24,25-fluorine substituted phthalocyanine copper is raw material.
5. the preparation method by the described gas sensor of claim 1 at first cleans substrate, and dry back is stand-by; It is characterized in that: with on the dried substrate 10
-4Evaporation gate electrode under the vacuum condition of Pa, evaporation gate insulation layer, functional layer successively on gate electrode then, then vapor deposition source electrode and drain electrode or on gate electrode evaporation gate insulation layer, source electrode and drain electrode, then evaporation functional layer successively.
6. by the preparation method of the described gas sensor of claim 5, it is characterized in that: speed is the 0.3-0.5 nm/sec during described evaporation gate electrode, and thickness is the 150-300 nanometer; Speed is the 0.3-0.6 nm/sec during evaporation insulation course, and thickness is the 200-350 nanometer; Speed is the 0.1-0.3 nm/sec during evaporation functional layer, and thickness is the 150-300 nanometer; Speed is the 0.5-0.8 nm/sec when vapor deposition source electrode and drain electrode, and source electrode and drain electrode thickness are respectively the 150-300 nanometer.
7. by the preparation method of the described gas sensor of claim 6, it is characterized in that: the method for the substrate drying after the described cleaning dries up or vacuum drying for adopting nitrogen.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102507659A (en) * | 2011-11-28 | 2012-06-20 | 电子科技大学 | Methanol gas sensor based on organic filter transistor and preparation method of methanol gas sensor |
| CN102636552A (en) * | 2012-04-13 | 2012-08-15 | 电子科技大学 | Methane gas sensor on basis of organic thin film transistor and preparation method of methane gas sensor |
| CN103472116A (en) * | 2013-08-29 | 2013-12-25 | 中国科学院化学研究所 | Ultrathin film field effect transistor sensor and application thereof |
| CN103604835A (en) * | 2013-12-09 | 2014-02-26 | 电子科技大学 | Preparation method of organic thin film transistor-based carbon monoxide gas sensor |
| CN103630576A (en) * | 2013-12-09 | 2014-03-12 | 电子科技大学 | Preparation method of OTFT(organic thin-film transistor)-based nitrogen dioxide gas sensor |
| CN104297320A (en) * | 2013-07-17 | 2015-01-21 | 国家纳米科学中心 | Organic monolayer thin film field effect gas sensor and preparation method thereof |
| CN104792849A (en) * | 2015-04-22 | 2015-07-22 | 电子科技大学 | Field effect tube gas sensor based on shellac encapsulation/regulation and preparation method thereof |
| CN104792848A (en) * | 2015-01-23 | 2015-07-22 | 南京华印半导体有限公司 | A pH detecting label based on a printed transistor |
| CN105866215A (en) * | 2016-03-24 | 2016-08-17 | 电子科技大学 | Organic thin-film transistor gas sensor and preparation method thereof |
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2009
- 2009-12-18 CN CN2009102557038A patent/CN102103119A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102507659B (en) * | 2011-11-28 | 2013-11-13 | 电子科技大学 | Methanol gas sensor based on organic filter transistor and preparation method of methanol gas sensor |
| CN102507659A (en) * | 2011-11-28 | 2012-06-20 | 电子科技大学 | Methanol gas sensor based on organic filter transistor and preparation method of methanol gas sensor |
| CN102636552A (en) * | 2012-04-13 | 2012-08-15 | 电子科技大学 | Methane gas sensor on basis of organic thin film transistor and preparation method of methane gas sensor |
| CN104297320A (en) * | 2013-07-17 | 2015-01-21 | 国家纳米科学中心 | Organic monolayer thin film field effect gas sensor and preparation method thereof |
| CN103472116A (en) * | 2013-08-29 | 2013-12-25 | 中国科学院化学研究所 | Ultrathin film field effect transistor sensor and application thereof |
| CN103472116B (en) * | 2013-08-29 | 2016-01-13 | 中国科学院化学研究所 | Ultrathin membrane field effect transistor sensing device and application thereof |
| CN103630576A (en) * | 2013-12-09 | 2014-03-12 | 电子科技大学 | Preparation method of OTFT(organic thin-film transistor)-based nitrogen dioxide gas sensor |
| CN103604835A (en) * | 2013-12-09 | 2014-02-26 | 电子科技大学 | Preparation method of organic thin film transistor-based carbon monoxide gas sensor |
| CN104792848A (en) * | 2015-01-23 | 2015-07-22 | 南京华印半导体有限公司 | A pH detecting label based on a printed transistor |
| CN104792848B (en) * | 2015-01-23 | 2017-11-24 | 南京华印半导体有限公司 | A kind of pH detection labels based on printed transistor |
| CN104792849A (en) * | 2015-04-22 | 2015-07-22 | 电子科技大学 | Field effect tube gas sensor based on shellac encapsulation/regulation and preparation method thereof |
| CN105866215A (en) * | 2016-03-24 | 2016-08-17 | 电子科技大学 | Organic thin-film transistor gas sensor and preparation method thereof |
| CN105866215B (en) * | 2016-03-24 | 2018-06-29 | 电子科技大学 | A kind of Organic Thin Film Transistors gas sensor and preparation method thereof |
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Application publication date: 20110622 |