CN102636544A - Multilayer thin film OTFT (organic thin film transistor) formaldehyde gas sensor and preparation method thereof - Google Patents
Multilayer thin film OTFT (organic thin film transistor) formaldehyde gas sensor and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a multilayer thin film OTFT (organic thin film transistor) formaldehyde gas sensor and a preparation method thereof. The sensor is in a bottom-grid bottom-contact device structure, and is provided with a source a, a drain b and a grid c, wherein a trench between the source and the drain is designed as an interdigital structure; the source and the drain are respectively a gold/titanium double-layer film, the gold material is used as an electrode layer, and the titanium material is used as a transition layer; and a sensitive thin film, which is an organic semiconductor material-inorganic nano oxide multilayer thin film, is arranged between the source and the drain. The invention combines the organic semiconductor material with the inorganic nano oxide, and adopts a multilayer thin film mode to prepare the sensitive thin film, thereby greatly enhancing the sensitivity and response speed of the sensor. On the premise of implementing formaldehyde gas detection, the invention breaks through the limitation in material selection in the traditional OTFT device, and adopts the MEMS technology to prepare the OTFT device. The invention has the advantages of small size, low cost and the like, can be integrated into an array, and opens up a new way for preparation and application of the OTFT formaldehyde sensor.
Description
Technical field
The present invention relates to microelectromechanical systems gas sensor and field of organic, be specifically related to a kind of multilayer film OTFT formaldehyde gas sensor based on organic semiconducting materials-inorganic nano metal oxide and preparation method thereof.
Background technology
Formaldehyde is a kind of to the healthy organic volatile that very big harm is arranged.The EPA of U.S. environmental protection general administration just announces that as far back as 1998 formaldehyde is the material that causes acute respiratory disease, after the people sucks formaldehyde, symptoms such as headache, tired, cough, asthma can occur; The World Health Organization (WHO) classifies it as " maybe type of making us carcinogen ".Therefore, the detection of room air pollution gas such as PARA FORMALDEHYDE PRILLS(91,95) becomes one of research focus and important topic of current scientific circles.In recent years various countries to various be the existing many researchs of detection of main indoor air pollutants with formaldehyde, mainly include chromatography, inorganic semiconductor gas sensor method, infra-red sepectrometry and surface acoustic wave sensor method etc.
Chromatographic technique and chromatogram-mass spectrometric hyphenated technique needs 30 min even time more of a specified duration just can detect the formaldehyde of 80 ppb, is one of common technology of escaping gas in the present sensing chamber, but exists problems such as sensitivity, selectivity and sampling time.The people such as Y. Sekine of Japan integrate colorimetric analysis and image transmission through the IT network and detect formaldehyde gas; But this can not change slow problem of its response time, so this shortcoming causes its requirement of leaving the on-site real-time fast measuring that big distance is still arranged.
The development of inorganic oxide semiconductor gas sensor and to the existing wide coverage of gas-sensitive property research of inflammable, explosive, toxic gas, but such sensor exist cost an arm and a leg, working temperature is high, volume reaches the response time greatly and waits shortcoming slowly.The L. Q. Shi of Japan and group thereof adopt rf induction plasma reactive deposition porous type SnO2 film, are used to detect formaldehyde and NO2 gas.This sensitive membrane has the nano particle of different size, so sensitivity is higher, and minimal detectable concentration is 20 ppb, but has the long and high problem of working temperature of response time.Employing emulsion methods such as Chen Xingru have prepared nano oxidized phosphide material, and have carried out the chromium oxide doping, survey the concentration of formaldehyde lower limit and can reach 0.3ppm, and this device can't be worked at ambient temperature, has the bigger problem of power consumption simultaneously.
In addition; People such as the Hyejung Seo of Korea S test formaldehyde with materials such as 2MP, 3MP and 4MP with the prepare of unimolecular layer on the semi-girder device of pressure resistance type, test result shows, though such sensor is relatively poor to responses such as toluene, benzene, xylene; And PARA FORMALDEHYDE PRILLS(91,95) has bigger sensitivity; But the response time is long, and restorative relatively poor, has greatly limited the practical application of such sensor.K.Kawamura and the group thereof of Japan according to AHMT material and formolite reaction after the ultimate principle that changes of color, the concentration that adopts the density of photodiode test reaction light to demarcate formaldehyde, though this method detectable concentration is lower, the system constructing complicacy.Kudo Hiroyuki etc. has reported a kind of high-sensitive fiber optics biochemical sensor, utilizes the fluorescent characteristic of the product NADH of formaldehyde dehydrogenase (FALDH) reaction to test formaldehyde, and test limits can reach 0.75ppb.Ma Qiang etc. has reported the formaldehyde gas sensor of self-assembled film layer by layer based on CdTe quantum dot/PDDA, and it detects principle is to utilize the fluorescent quenching effect of prepared film, and test concentration of formaldehyde scope is 5～500ppb.Liu Shiwei etc. have synthesized the nano catalyst with hollow-core construction through sacrificing template.The active substance of this catalyzer as working electrode, be electrolyte with 1mol/LKOH, assembled the current mode formaldehyde gas sensor.In formaldehyde gas concentration is 0～2.23 * 10
-6In the mol/L scope sensor has been carried out performance test.This transducer sensitivity is higher than the sensor about 70% with the assembling of carrying capacity solid gold nanocatalyst, has reached the purpose that reduces noble metal dosage.Have advantages such as response time faster, good reappearance and good linear relationship, the formaldehyde gas that can be used in the debita spissitudo scope detects.Guo Huihui etc. have reported a kind of novel MEMS pressure resistance type formaldehyde gas sensor based on the macromolecule membrane swelling effect; Its structure is made up of the silicon bridge and one deck modification acrylate air-sensitive film that embed Wheatstone bridge; Sensitive thin film is because of absorbing formaldehyde gas generation swelling; Make the Wheatstone bridge on the silicon bridge produce output voltage, thereby realize the detection of PARA FORMALDEHYDE PRILLS(91,95) gas.Test result shows that this sensor resolution is 10 * 10
-6, are respectively response time and release time 50s and 65s.And aspect the formaldehyde sensor related patent U.S. Patent No., most employing resistance-type structure of being reported is not seen the formaldehyde sensor patent report that has based on the OTFT device architecture.
As another typical case's representative of MEMS micro-gas sensors, the OTFT gas sensor has extraordinary application prospect also having received increasing concern aspect chemical gas and the biochemical detection.Gas sensor with traditional is compared; The advantages such as the gas sensor based on the OTFT structure is highly sensitive except having, can use at normal temperatures, also have following remarkable advantage: the high resistance change transitions of utilizing the transistor fundamental characteristics to be difficult to detect changes for the electric current that is prone to detect; Can regulate the sensitivity of sensor through the grid WV of suitable selector; The multiparameter pattern more has identification and the analysis that utilizes gas; Through can regulate the electrical property of sensor easily to the chemical modification of organic molecule, improve sensitivity; The organism pliability is good, can be crooked, be easy to process different shape; Be easy to integratedly, can prepare the large tracts of land sensor array.
Therefore, the gas sensor low cost of manufacture that the OTFT gas sensor is more traditional, and strong to the research ability of microenvironment, be convenient to rig-site utilization and carry; And utilize microelectronics and micro-processing technology, OTFT can process array easily, and (System on chip, SOC), and the size of integrated back array system is relatively also less can be integrated into SOC(system on a chip) with measuring and analysis system.
Scientific research institutions such as Cambridge University, Tokyo University, the University of Pennsylvania, Princeton University and AT&T Labs, IBM, Xerox, Epson have all carried out the work of OTFT and application facet thereof.Although present most of OTFT chemical sensors of reporting are used to detect ammonia, nitrogen dioxide, alcohols gas etc., do not pointed out to be applied to the detection of indoor air pollutants clearly.Domestic aspect; Should change chemistry institute of institute, the Chinese Academy of Sciences, Tsing-Hua University, Northern Transportation University, 26 in middle electric group, Jilin University and University of Electronic Science and Technology etc. with Changchun is the research work that the research unit of representative has carried out OTFT in succession, but it is then few that OTFT is applied to the research of sensor field.
Aspect the OTFT formaldehyde gas sensor, people such as Fei Yue have prepared CNT base field-effect transistor formaldehyde gas sensor, and having tested concentration is the formaldehyde of 500ppm.People such as Yan Jianfei have prepared the OTFT gas sensor based on titanium cyanines copper, and having detected concentration is the formaldehyde gas of 290 ppm, but the stability of this sensor is relatively poor with repeatability.
Summary of the invention
To above-mentioned prior art, the technical matters that the present invention will solve is: there is poor selectivity in existing formaldehyde gas sensor, the response time is slow, sensitivity is low, stability and repeated relatively poor.
Goal of the invention of the present invention is: a kind of multilayer film OTFT formaldehyde gas sensor and preparation method thereof is provided, but simple, good, the highly sensitive working and room temperature of selectivity of this formaldehyde sensor preparation is with a wide range of applications in the environmental monitoring field.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of OTFT formaldehyde sensor of multilayer film is provided, it is characterized in that: be contact devices configuration at the bottom of the bottom gate, be provided with source a, leak b, grid c three utmost points that the channel design between source electrode and the drain electrode is an interdigital structure; Wherein source electrode is gold/titanium duplicature with drain electrode, does electrode layer with gold copper-base alloy, and the titanium material is as transition bed; Between source electrode and the drain electrode sensitive thin film is set, this sensitive thin film is organic semiconducting materials-inorganic nanometer oxide multilayer film.
The number of plies of said sensitive thin film is 2～4 layers.
The width of said source electrode and drain electrode and length are respectively 1000～5000 μ m and 5～25 μ m, and thickness is 50～150nm, and thickness of insulating layer is 90～300nm.
Method for making according to multilayer film OTFT formaldehyde sensor provided by the present invention is characterized in that, may further comprise the steps:
adopts the thermal oxidation process of dried oxygen-wet oxygen-dried oxygen order to prepare silicon dioxide insulating layer;
Preparation method according to multilayer film OTFT formaldehyde sensor provided by the present invention; It is characterized in that; Wherein the said silicon chip substrate thickness of step
is 300～600 μ m; Resistivity is less than 0.02 Ω cm; Epitaxy layer thickness is 5～15 μ m, and resistivity is 2.0～8.0 Ω cm.
Silica dioxide medium layer thickness in the said step
is 100～300 nm.
In said step
said organic semiconductor-inorganic nanometer oxide laminated film; Organic phase is conducting polymer class (like polythiophene class), oligomer class (six thiophene-based) and small molecule material (like phthalocyanines), and inorganic is nano-metal-oxides such as nano-ZnO, Indium Tin Oxide (ITO), TiO2, Fe2O3, WO3 mutually; The thickness of organic semiconductor～inorganic nanometer oxide laminated film is 70-200 nm.
Compared with prior art, the present invention has following beneficial effect:
1, adopts MEMS technology preparation OTFT device, but have advantages such as volume is little, the low integrated array of cost;
2, organic semiconducting materials is combined with inorganic nanometer oxide, when realizing that formaldehyde gas detects, removed the limitation that traditional OTFT device material is selected;
3, adopt p type organic semiconducting materials and n type nano metal oxide materials to prepare multilayer film, this multilayer film also is a kind of of heterostructure simultaneously, and this structure is that the material of OTFT gas sensor selects to provide new thinking;
4, adopt the thin film preparation process or the technologies that combine such as gas blowout, EFI, spin coating or vacuum evaporation, for the preparation of formaldehyde sensor sensitive thin film provides the more selectivity of multiplex's skill;
5, adopt the mode of multilayer film to prepare sensitive thin film, improve the sensitivity and the response speed of formaldehyde sensor greatly;
6,, but has the advantage of working under the room temperature based on the formaldehyde sensor of OTFT structure;
7, the OTFT sensor has the advantages that multiparameters such as leakage current, threshold voltage, switch current ratio and mobility detect; This is the characteristics that resistance-type or infrared type formaldehyde sensor are not had; Nano composite material, thin-film technique are combined with MEMS technology; Simplified device preparation technology, improved device performance, for new approach has been opened up in the preparation and the application of OTFT formaldehyde sensor.
Description of drawings
Fig. 1 is OTFT formaldehyde sensor structural section figure provided by the present invention (along wherein channel direction cutting);
Fig. 2 is a source-drain electrode shape vertical view provided by the present invention;
Fig. 3 be bilayer film OTFT formaldehyde sensor provided by the present invention to 20 ppm formaldehyde time-the sensitivity response curve;
Fig. 4 be with bilayer film OTFT formaldehyde sensor performance provided by the present invention, the single film OTFT formaldehyde sensor that is provided to 40 ppm formaldehyde time-the sensitivity response curve.
Reference numeral: a is that source electrode, b are grid for drain electrode, c.
Embodiment
To combine accompanying drawing and embodiment that the present invention is done further description below.
Adopt the multilayer film OTFT formaldehyde gas sensor of MEMS technical matters and film preparation,, take n type silicon substrate in conjunction with shown in Figure 1; The method of thermal oxide prepares insulation course silicon dioxide; Gold is as electrode, and titanium is as transition bed, and electrode layer is positioned on the transition bed; Purpose is in order to strengthen adhesiveness, and source electrode a, drain electrode b and grid c three-end electrode have the outer lead that is used to test respectively.The present invention utilizes the characteristic of OTFT sensor construction itself, directly adopts the method for conducting resinl sintering to draw grid in silicon chip substrate, has simplified preparation section greatly, and has improved the performance of device.
In conjunction with shown in Figure 2, be the Graphics Design of OTFT source-drain electrode, channel design is an interdigital structure, in order to increase channel width-over-length ratio, to improve the mutual conductance of device.Shown in the wide and long 4000 μ m and the 25 μ m of being respectively of OTFT device channel, this size mainly is to consider the easy implementation of MEMS manufacturing process and two aspects of sensitivity characteristic of OTFT device simultaneously.
Before the sensitive thin film preparation, at first prepared OTFT device is carried out surface preparation.With OTFT device ultrasonic cleaning in deionized water, acetone and absolute ethyl alcohol successively.Dry for standby.The polymer P 3HT of 3-hexyl thiophene is dissolved in the methenyl choloride solvent that concentration is 5mg/ml, nano oxidized zinc solution is dissolved in the anhydrous ethanol solvent that concentration is 5mg/ml.Adopt gas blowout technology, at first gas blowout one deck Nano zinc oxide film (Fig. 1-F1 layer) on the OTFT device is dried, to remove solvent fully; Before the deposition P3HT film, under the device cool to room temperature, adopt gas blowout prepared one deck P3HT film (Fig. 1-F2 layer), solvent is removed in oven dry.Test.
As shown in Figure 3, for the OTFT formaldehyde sensor based on the P3HT-ZnO bilayer film provided by the present invention to 20 ppm formaldehyde time-the sensitivity response curve.In order to compare, under the same conditions, to have prepared single P3HT film OTFT formaldehyde sensor and tested with multilayer film OTFT formaldehyde sensor.The result finds that single P3HT film OTFT formaldehyde sensor does not show obvious variation to the formaldehyde of 20 ppm, and it has a provisioning response to 40 ppm formaldehyde gases, and is as shown in Figure 4.It is thus clear that, can't resolve behind the single P3HT film OTFT formaldehyde sensor absorbing formaldehyde gas, then have better response and restorability based on the OTFT sensor of P3HT-ZnO multilayer film.
Claims (7)
1. multilayer film OTFT formaldehyde sensor is characterized in that: for contact devices configuration at the bottom of the bottom gate, be provided with source electrode, drain electrode, grid, the channel design between source electrode and the drain electrode is an interdigital structure; Wherein source electrode is gold/titanium duplicature with drain electrode, does electrode layer with gold copper-base alloy, and the titanium material is as transition bed; Between source electrode and the drain electrode sensitive thin film is set, this sensitive thin film is organic semiconducting materials-inorganic nanometer oxide multilayer film.
2. multilayer film OTFT formaldehyde sensor according to claim 1 is characterized in that the number of plies of said sensitive thin film is 2～4 layers.
3. multilayer film OTFT formaldehyde sensor according to claim 1 is characterized in that, the width of said source electrode and drain electrode and length are respectively 1000～5000 μ m and 5～25 μ m, and thickness is 50～150nm, and thickness of insulating layer is 90～300nm.
4. the method for making of multilayer film OTFT formaldehyde sensor is characterized in that, may further comprise the steps:
adopts the silicon chip with epitaxial loayer, single-crystal silicon device layer as substrate, and the column criterion of going forward side by side is cleaned;
adopts the thermal oxidation process of dried oxygen-wet oxygen-dried oxygen order to prepare silicon dioxide insulating layer;
scribing;
5. according to the method for making of weighing 4 described multilayer film OTFT formaldehyde sensors; It is characterized in that; Wherein the said silicon chip substrate thickness of step
is 300～600 μ m; Resistivity is less than 0.02 Ω cm; Epitaxy layer thickness is 5～15 μ m, and resistivity is 2.0～8.0 Ω cm.
6. according to the method for making of weighing 4 described multilayer film OTFT formaldehyde sensors; It is characterized in that the silica dioxide medium layer thickness in the said step
is 100～300 nm.
7. according to the method for making of power 4 described multilayer film OTFT formaldehyde sensors, it is characterized in that said step
In said organic semiconductor-inorganic nanometer oxide laminated film, organic phase is conducting polymer class, oligomer class and small molecule material, and inorganic is nano-ZnO, Indium Tin Oxide (ITO), TiO mutually
2, Fe
2O
3, WO
3Deng nano-metal-oxide; The thickness of organic semiconductor-inorganic nanometer oxide laminated film is 70～200 nm.
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| CN102931350A (en) * | 2012-11-20 | 2013-02-13 | 上海交通大学 | Solution-processed bipolar thin film transistor and preparation method thereof |
| CN103529120A (en) * | 2013-10-25 | 2014-01-22 | 中国电子科技集团公司第三十八研究所 | Device and process for preparing composite sensitive film of surface acoustic wave sensor |
| CN103604864A (en) * | 2013-10-25 | 2014-02-26 | 中国电子科技集团公司第三十八研究所 | Surface acoustic wave formaldehyde gas sensor based on electric conduction composite sensitive material |
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| CN104897735A (en) * | 2015-04-28 | 2015-09-09 | 北京大学 | Double layer structural photocatalytic formaldehyde sensor and preparation method thereof |
| CN105136893A (en) * | 2015-06-24 | 2015-12-09 | 中国科学院宁波材料技术与工程研究所 | Thin film transistor biosensor and preparation method thereof |
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| CN107643328A (en) * | 2017-10-31 | 2018-01-30 | 中国农业科学院农业信息研究所 | A kind of SMD gas sensor device for food container formaldehyde examination and its preparation method and application |
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| CN110845152A (en) * | 2019-11-21 | 2020-02-28 | 深圳大学 | Surface acoustic wave gas sensor of modified colloidal quantum dot film and preparation method thereof |
| CN111189901A (en) * | 2020-01-13 | 2020-05-22 | 吉林大学 | Gd2Zr2O7Solid electrolyte type formaldehyde sensor and preparation method thereof |
| US10823692B2 (en) | 2015-10-06 | 2020-11-03 | Carrier Corporation | MEMS die with sensing structures |
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-
2012
- 2012-04-23 CN CN2012101194236A patent/CN102636544A/en active Pending
Non-Patent Citations (2)
| Title |
|---|
| 严剑飞 等: "CｕＰc有机薄膜晶体管稳定性研究", 《半导体光电》 * |
| 卢亮: "聚3-已基噻吩复合薄膜气体传感器的制备及特性研究", 《中国优秀硕士学位论文》 * |
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| CN103604864B (en) * | 2013-10-25 | 2016-02-10 | 中国电子科技集团公司第三十八研究所 | A kind of surface acoustic wave formaldehyde gas sensor based on electric conduction composite sensitive material |
| CN103529120A (en) * | 2013-10-25 | 2014-01-22 | 中国电子科技集团公司第三十八研究所 | Device and process for preparing composite sensitive film of surface acoustic wave sensor |
| CN103604864A (en) * | 2013-10-25 | 2014-02-26 | 中国电子科技集团公司第三十八研究所 | Surface acoustic wave formaldehyde gas sensor based on electric conduction composite sensitive material |
| CN103529120B (en) * | 2013-10-25 | 2016-06-01 | 中国电子科技集团公司第三十八研究所 | The preparation technology of composite sensitive film of surface acoustic wave sensor |
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| CN105136893A (en) * | 2015-06-24 | 2015-12-09 | 中国科学院宁波材料技术与工程研究所 | Thin film transistor biosensor and preparation method thereof |
| CN105136893B (en) * | 2015-06-24 | 2017-11-07 | 中国科学院宁波材料技术与工程研究所 | A kind of thin film transistor (TFT) biology sensor and preparation method thereof |
| CN105699463A (en) * | 2015-08-27 | 2016-06-22 | 索武生 | Chemical field effect transistor gas-sensitive sensor and manufacturing method thereof |
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| CN109030564A (en) * | 2018-06-04 | 2018-12-18 | 深圳大学 | A kind of transistor-type formaldehyde sensor and preparation method thereof |
| CN109030564B (en) * | 2018-06-04 | 2021-05-11 | 深圳大学 | Transistor type formaldehyde sensor and manufacturing method thereof |
| CN109946349A (en) * | 2019-04-02 | 2019-06-28 | 武汉轻工大学 | Organic field effect tube and preparation method thereof and biogenic amine gas sensor |
| CN109946349B (en) * | 2019-04-02 | 2021-10-29 | 武汉轻工大学 | Organic field effect transistor, preparation method thereof and biogenic amine gas-sensitive sensor |
| CN110845152A (en) * | 2019-11-21 | 2020-02-28 | 深圳大学 | Surface acoustic wave gas sensor of modified colloidal quantum dot film and preparation method thereof |
| CN110845152B (en) * | 2019-11-21 | 2022-03-08 | 惠雨恩科技(深圳)有限公司 | Surface acoustic wave gas sensor of modified colloidal quantum dot film and preparation method thereof |
| CN111189901A (en) * | 2020-01-13 | 2020-05-22 | 吉林大学 | Gd2Zr2O7Solid electrolyte type formaldehyde sensor and preparation method thereof |
| CN111189901B (en) * | 2020-01-13 | 2021-06-29 | 吉林大学 | Gd2Zr2O7Solid electrolyte type formaldehyde sensor and preparation method thereof |
| CN113640361A (en) * | 2021-07-19 | 2021-11-12 | 湘潭大学 | Grid sensitive FET gas sensor array for trace formaldehyde gas detection and preparation method thereof |
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Application publication date: 20120815 |