CN109900763B - Nitrogen dioxide sensor chip based on organic transistor and preparation method thereof - Google Patents
Nitrogen dioxide sensor chip based on organic transistor and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a nitrogen dioxide sensor chip based on an organic transistor and a preparation method thereof, wherein the organic transistor comprises a substrate, a gate electrode, a dielectric layer, a semiconductor layer, a source electrode and a drain electrode from top to bottom in sequence, the dielectric layer is a high-dielectric-constant biological material or a fluorine-containing material, the semiconductor layer is a mixture of a semiconductor material and a dielectric material, and the semiconductor layer is formed by regulating and controlling a double-solvent system through an electric field; the semiconductor layer of the double-solvent system is a mixture of the semiconductor material and the dielectric material, so that on one hand, the damage to the semiconductor material in the electric field regulation process is protected, on the other hand, the mixed double-solvent system can more easily form the semiconductor layer with high orientation, the performance of the sensor chip is effectively improved, and the sensor chip can be used in a nitrogen dioxide sensor.
Description
Technical Field
The invention belongs to the technical field of sensor chip preparation, and particularly relates to an organic transistor ammonia gas sensor chip based on an electric field regulation and control semiconductor layer.
Background
Today, with the rapid development of industry, along with the increasing attention of China on environmental protection, the market for monitoring and detecting smoke emission is rapidly growing. In life, people release a lot of harmful gases into the atmosphere directly or indirectly, such as methane, nitric oxide, nitrogen dioxide, ammonia gas, sulfur dioxide, hydrogen sulfide and the like, and sometimes even endanger life. Nitrogen dioxide is a pollution gas with great environmental hazard, is generated in the combustion process of coal and petroleum, is the main cause of acid rain and haze, and therefore needs to be strictly monitored.
Gas sensor chips based on transistors have become a research hotspot in the field of sensors, and their application in the detection of inorganic and volatile gases has been widely reported. The existing transistors can stably work in atmospheric environment, are mostly silicon-based transistors, can cause environmental pollution when being used in large quantities, have complex preparation process and high cost, and are difficult to realize flexible and large-area devices; in contrast, the preparation method is made of organic or biological materials, has low cost and simple preparation process, and is easy to prepare large-area flexible devices; compared with a resistance type device, the organic transistor gas sensor chip has the advantages of high sensitivity, room-temperature work, easy integration, independent multi-parameter improvement of selectivity and the like, and is always concerned by people in the field of gas sensor chips. Meanwhile, with the emergence of energy problems and the rapid development of portable electronics, how to prepare a sensor chip with low driving voltage and high detection rate is a problem to be solved urgently.
Compared with the traditional silicon-based MOSFET, the preparation process of the organic transistor replaces the complex process of manufacturing the device by the traditional methods such as high-temperature vacuum deposition and the like by using simple processes such as low-temperature deposition or solution (black spraying printing, spin coating, dripping and the like) and the like. The organic semiconductor layer is an integral part of the transistor gas sensor chip. Organic semiconductor layers prepared by low-temperature deposition or solution methods are generally not highly stable, and the sensitivity and stability to nitrogen dioxide gas are to be improved. Therefore, how to adopt a simple and effective preparation process to realize a sensor chip with high response speed, high responsivity, high sensitivity and high stability is a hot spot of current research.
Disclosure of Invention
The invention aims to provide a nitrogen dioxide sensor chip based on an organic transistor and a preparation method thereof, and solves the problems that in the prior art, although the organic transistor is also applied to the nitrogen dioxide sensor chip, the detection precision and stability are not high, and most organic semiconductor layers prepared by the traditional process have the problems of long-term bias voltage and unstable high-frequency and low-frequency, so that the organic transistor is difficult to apply to an integrated sensor chip.
The purpose of the invention is realized as follows: a nitrogen dioxide sensor chip based on an organic transistor comprises a substrate, a gate electrode, a dielectric layer, a semiconductor layer, a source electrode and a drain electrode which are sequentially arranged from bottom to top, wherein the semiconductor layer is made of a semiconductor material of an electric field regulation and control double-solvent system, the semiconductor layer is made of a mixed material of a soluble organic semiconductor material and a soluble dielectric material, and the mass percentage of the dielectric material in the semiconductor layer is 5% -30%.
As a further limitation of the invention, the dielectric layer is made of one or a combination of more of shellac, gelatin, silk fibroin, mica and polyvinylidene fluoride, and the thickness of the dielectric layer is 300-500 nm.
As a further limitation of the present invention, the soluble organic semiconductor material in the semiconductor layer is made of one of poly-3-hexylthiophene, Tips-pentacene, silicone-containing polyisoprene derivatives, polythiophene semiconductor series, and the soluble dielectric material in the semiconductor layer is made of one of polyvinyl alcohol, polyimide, polystyrene, polymethyl methacrylate, polyethylene. The double solvents of the semiconductor layer comprise two of chlorobenzene, dichlorobenzene, toluene, xylene, ethanol, ethylene glycol, methanol, dimethoxyethanol and the like.
As a further limitation of the invention, the thickness of the semiconductor layer is 25 to 100 nm.
As a further limitation of the present invention, the gate electrode, the source electrode and the drain electrode are made of metal nanowires, and the metal nanowires are made of one of silver nanowires, gold nanowires, iron nanowires, copper nanowires, cobalt nanowires, manganese nanowires, cadmium nanowires, aluminum nanowires, nickel nanowires, indium nanowires, tin nanowires, tungsten nanowires and platinum nanowires.
The invention also discloses a preparation method of the organic transistor nitrogen dioxide sensor chip, which comprises the following steps:
step 1: cleaning the substrate by using a detergent, an acetone solution, deionized water and an isopropyl acetone solution, and drying the substrate by using nitrogen after cleaning;
step 2: preparing the gate electrode on the surface of the substrate;
and step 3: preparing a dielectric layer on the surface of the gate electrode;
and 4, step 4: ultrasonically mixing a dielectric material and a soluble organic semiconductor material in proportion, and preparing a semiconductor layer on the dielectric layer in a mode of regulating and controlling a double-solvent system semiconductor layer by using an electric field used by the mixed solution;
and 5: and preparing a source electrode and a drain electrode on the semiconductor layer prepared in the step 4.
As a further limitation of the present invention, in the step 3, the dielectric layer is prepared by one of spin coating, roll coating, dropping film, stamping, printing or spray coating.
As a further limitation of the present invention, the semiconductor layer is prepared by one of roll coating, brush coating, knife coating, printing or spray coating under the control of an electric field.
As a further limitation of the present invention, in the step 2 and the step 5, the gate electrode, the source electrode, and the drain electrode are prepared by one of vacuum thermal evaporation, magnetron sputtering, plasma enhanced chemical vapor deposition, screen printing, and spin coating.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the invention, the electric field is adopted to regulate the semiconductor material, and due to the orientation effect of the electric field, the oriented crystallinity of the semiconductor layer is realized, so that the trap of the semiconductor layer is easier to respond to a small amount of nitrogen dioxide, and the performance of the sensor chip and the detection sensitivity capability of the sensor chip to the nitrogen dioxide are improved. Meanwhile, the mobility is improved due to high crystallinity, and the response time of the sensor chip is shortened;
2. the semiconductor solution of a double-solvent system is adopted in the film forming process, the semiconductor material has a more excellent film forming crystallization effect due to the introduction of the double solvent, and the temperature and time in the film forming annealing process are effectively reduced by the double-solvent system, so that the energy loss in the preparation process is reduced;
3. the semiconductor material and the dielectric material are mixed, so that on one hand, the damage to the semiconductor material in the electric field regulation and control process is protected, and meanwhile, the crystallinity of the semiconductor material is further improved due to the introduction of the dielectric material, so that the sensitivity and the responsiveness of the sensor chip are improved, the stability of the sensor chip in low frequency and high frequency is improved, and the service life and the stability of a device are improved;
4. the application of the high dielectric material realizes the low-voltage driving of the chip, so that the chip is more suitable for large-scale and rapid industrial production, and simultaneously, due to the characteristics of the polarization groups of the selected biological material and the fluorine-containing polymer dielectric material, the adsorption of nitrogen dioxide is more facilitated, so that the sensing of the sensor chip on low-concentration nitrogen dioxide is improved.
Drawings
FIG. 1 is a schematic diagram of the present invention.
FIG. 2 is a schematic process diagram of an electric field controlled semiconductor layer with a dual solvent system according to an embodiment of the present invention.
Figure 3 is a gas response time current curve for a nitrogen dioxide sensor chip in an embodiment of the present invention.
The structure comprises a substrate 1, a gate electrode 2, a dielectric layer 3, a semiconductor layer 4, a source electrode 5 and a drain electrode 6.
Detailed Description
All of the features disclosed in this specification, or all of the steps in any method or process so disclosed, may be combined in any combination, except combinations of features and/or steps that are mutually exclusive.
Example 1:
as shown in fig. 1-2, the bottom-gate top-contact structure is formed by the following materials and thicknesses: the gate electrode, the source electrode and the drain electrode are all silver nanowires, the dielectric layer is made of gelatin, and the thickness is 500 nm. The semiconductor layer is formed by mixing poly 3-hexylthiophene (P3HT) and polystyrene (the content is 20%), the solvent is mixed solution of chlorobenzene and ethanol (the volume ratio is 1: 1), the thickness of the prepared semiconductor layer is 30nm, and the structure can realize the organic transistor nitrogen dioxide sensor chip with high sensitivity, high responsivity and high stability.
The preparation method of the nitrogen dioxide sensor chip comprises the following steps:
1. cleaning the substrate by using a detergent, an acetone solution, deionized water and an isopropanol solution, and drying by using nitrogen after cleaning;
2. preparing a silver nanowire gate electrode on the surface of a substrate;
3. preparing a gelatin dielectric layer on the gate electrode;
4. ultrasonically mixing dielectric material polystyrene and soluble organic semiconductor material poly-3-hexylthiophene (P3HT) in proportion, and preparing a semiconductor layer on the dielectric layer by using the mixed solution in a mode of regulating and controlling a double-solvent system by an electric field;
5. and preparing a silver nanowire source electrode and a silver nanowire drain electrode on the semiconductor layer.
Example 2:
as shown in fig. 1-2, the bottom-gate top-contact structure is formed by the following materials and thicknesses: the gate electrode, the source electrode and the drain electrode are all silver nanowires, the dielectric layer is shellac, and the thickness is 400 nm. The semiconductor layer is formed by mixing poly 3-hexylthiophene (P3HT) and polymethyl methacrylate (the content is 5%), the solvent is mixed solution of chlorobenzene and methanol (the volume ratio is 1: 1), the thickness of the prepared semiconductor layer is 40nm, and the structure can realize the organic transistor nitrogen dioxide sensor chip with high sensitivity, high responsiveness and high stability.
The preparation method of the nitrogen dioxide sensor chip comprises the following steps:
1. cleaning the substrate by using a detergent, an acetone solution, deionized water and an isopropanol solution, and drying by using nitrogen after cleaning;
2. preparing a silver nanowire gate electrode on the surface of a substrate;
3. preparing a shellac dielectric layer on the gate electrode;
4. ultrasonically mixing a dielectric material polymethyl methacrylate and a soluble organic semiconductor material poly-3-hexylthiophene (P3HT) in proportion, and preparing a semiconductor layer on the dielectric layer by using the mixed solution in a mode of regulating and controlling a double-solvent system by an electric field;
5. and preparing a silver nanowire source electrode and a silver nanowire drain electrode on the semiconductor layer.
Example 3:
as shown in fig. 1-2, the bottom-gate top-contact structure is formed by the following materials and thicknesses: the gate electrode, the source electrode and the drain electrode are all gold nanowires, the dielectric layer is silk fibroin, and the thickness is 400 nm. The semiconductor layer is formed by mixing Tips-pentacene and polymethyl methacrylate (the content is 5%), the solvent is mixed solution of chlorobenzene and methanol (the volume ratio is 1: 1), the thickness of the prepared semiconductor layer is 50nm, and the structure can realize the organic transistor nitrogen dioxide sensor chip with high sensitivity and high stability.
The preparation method of the nitrogen dioxide sensor chip comprises the following steps:
1. cleaning the substrate by using a detergent, an acetone solution, deionized water and an isopropanol solution, and drying by using nitrogen after cleaning;
2. preparing a gold nanowire gate electrode on the surface of a substrate;
3. preparing a silk fibroin dielectric layer on the gate electrode;
4. ultrasonically mixing a dielectric material polymethyl methacrylate and a soluble organic semiconductor material Tips-pentacene according to a proportion, and preparing a semiconductor layer on the dielectric layer by using the mixed solution in a mode of regulating and controlling a double-solvent system by an electric field;
5. and preparing a gold nanowire source electrode and a gold nanowire drain electrode on the semiconductor layer.
Example 4:
as shown in fig. 1-2, the bottom-gate top-contact structure is formed by the following materials and thicknesses: the gate electrode, the source electrode and the drain electrode are all copper nanowires, the dielectric layer is silk fibroin, and the thickness is 400 nm. The semiconductor layer is formed by mixing Tips-pentacene and polyvinyl alcohol (the content is 10%), the solvent is mixed solution of chlorobenzene and methanol (the volume ratio is 1: 1), the thickness of the prepared semiconductor layer is 25nm, and the structure can realize the organic transistor nitrogen dioxide sensor chip with high sensitivity and high stability.
The preparation method of the nitrogen dioxide sensor chip comprises the following steps:
1. cleaning the substrate by using a detergent, an acetone solution, deionized water and an isopropanol solution, and drying by using nitrogen after cleaning;
2. preparing a copper nanowire gate electrode on the surface of a substrate;
3. preparing a silk fibroin dielectric layer on the gate electrode;
4. ultrasonically mixing dielectric material polyvinyl alcohol and soluble organic semiconductor material Tips-pentacene according to a proportion, and preparing a semiconductor layer on the dielectric layer by using the mixed solution in a mode of regulating and controlling a double-solvent system by an electric field;
5. and preparing a copper nanowire source electrode and a copper nanowire drain electrode on the semiconductor layer.
Example 5:
as shown in fig. 1-2, the bottom-gate top-contact structure is formed by the following materials and thicknesses: the gate electrode, the source electrode and the drain electrode are all aluminum nanowires, the dielectric layer is silk fibroin, and the thickness is 400 nm. The semiconductor layer is formed by mixing poly 3-hexylthiophene and polyvinyl alcohol (the content is 15%), the solvent is a mixed solution of chlorobenzene and methanol (the volume ratio is 1: 1), the thickness of the prepared semiconductor layer is 25nm, and the structure can realize the organic transistor nitrogen dioxide sensor chip with high sensitivity and high stability.
The preparation method of the nitrogen dioxide sensor chip comprises the following steps:
1. cleaning the substrate by using a detergent, an acetone solution, deionized water and an isopropanol solution, and drying by using nitrogen after cleaning;
2. preparing an aluminum nanowire gate electrode on the surface of a substrate;
3. preparing a silk fibroin dielectric layer on the gate electrode;
4. ultrasonically mixing dielectric material polyvinyl alcohol and soluble organic semiconductor material poly-3-hexylthiophene according to a proportion, and preparing a semiconductor layer on the dielectric layer by using the mixed solution in a mode of regulating and controlling a double-solvent system by an electric field;
5. and preparing an aluminum nanowire source electrode and an aluminum nanowire drain electrode on the semiconductor layer.
Example 6:
as shown in fig. 1-2, the bottom-gate top-contact structure is formed by the following materials and thicknesses: the gate electrode, the source electrode and the drain electrode are all aluminum nanowires, the dielectric layer is silk fibroin, and the thickness is 400 nm. The semiconductor layer is formed by mixing poly 3-hexylthiophene and polymethyl methacrylate (PMMA) (the content is 15%), the solvent is a mixed solution of toluene and methanol (the volume ratio is 1: 1), the thickness of the prepared semiconductor layer is 25nm, and the structure can realize the organic transistor nitrogen dioxide sensor chip with high sensitivity and high stability.
The preparation method of the nitrogen dioxide sensor chip comprises the following steps:
1. cleaning the substrate by using a detergent, an acetone solution, deionized water and an isopropanol solution, and drying by using nitrogen after cleaning;
2. preparing an aluminum nanowire gate electrode on the surface of a substrate;
3. preparing a silk fibroin dielectric layer on the gate electrode;
4. ultrasonically mixing a dielectric material polymethyl methacrylate (PMMA) and a soluble organic semiconductor material poly-3-hexylthiophene according to a proportion, and preparing a semiconductor layer on the dielectric layer by using the mixed solution in a mode of regulating and controlling a double-solvent system by an electric field;
5. and preparing an aluminum nanowire source electrode and an aluminum nanowire drain electrode on the semiconductor layer.
Example 7:
as shown in fig. 1-2, the bottom-gate top-contact structure is formed by the following materials and thicknesses: the gate electrode, the source electrode and the drain electrode are all aluminum nanowires, the dielectric layer is silk fibroin, and the thickness is 400 nm. The semiconductor layer is formed by mixing poly 3-hexylthiophene and polymethyl methacrylate (PMMA) (the content is 15%), the solvent is mixed solution of dimethylbenzene and dimethoxyl ethanol (the volume ratio is 1: 1), the thickness of the prepared semiconductor layer is 25nm, and the structure can realize the organic transistor nitrogen dioxide sensor chip with high sensitivity, high responsivity and high stability.
The preparation method of the nitrogen dioxide sensor chip comprises the following steps:
1. cleaning the substrate by using a detergent, an acetone solution, deionized water and an isopropanol solution, and drying by using nitrogen after cleaning;
2. preparing an aluminum nanowire gate electrode on the surface of a substrate;
3. preparing a silk fibroin dielectric layer on the gate electrode;
4. ultrasonically mixing a dielectric material polymethyl methacrylate (PMMA) and a soluble organic semiconductor material poly-3-hexylthiophene according to a proportion, and preparing a semiconductor layer on the dielectric layer by using the mixed solution in a mode of regulating and controlling a double-solvent system by an electric field;
5. and preparing an aluminum nanowire source electrode and an aluminum nanowire drain electrode on the semiconductor layer.
Example 8:
as shown in fig. 1-2, the bottom-gate top-contact structure is formed by the following materials and thicknesses: the gate electrode, the source electrode and the drain electrode are all tungsten nanowires, the dielectric layer is polyvinylidene fluoride, and the thickness is 500 nm. The semiconductor layer is formed by mixing poly 3-hexylthiophene and polymethyl methacrylate (PMMA) (the content is 15%), the solvent is mixed solution of dimethylbenzene and dimethoxyl ethanol (the volume ratio is 1: 1), the thickness of the prepared semiconductor layer is 25nm, and the structure can realize the organic transistor nitrogen dioxide sensor chip with high sensitivity, high responsivity and high stability.
The preparation method of the nitrogen dioxide sensor chip comprises the following steps:
1. cleaning the substrate by using a detergent, an acetone solution, deionized water and an isopropanol solution, and drying by using nitrogen after cleaning;
2. preparing a tungsten nanowire gate electrode on the surface of a substrate;
3. preparing a polyvinylidene fluoride dielectric layer on the gate electrode;
4. ultrasonically mixing a dielectric material polymethyl methacrylate (PMMA) and a soluble organic semiconductor material poly-3-hexylthiophene according to a proportion, and preparing a semiconductor layer on the dielectric layer by using the mixed solution in a mode of regulating and controlling a double-solvent system by an electric field;
5. and preparing a tungsten nanowire source electrode and a tungsten nanowire drain electrode on the semiconductor layer.
Example 9:
as shown in fig. 1-2, the bottom-gate top-contact structure is formed by the following materials and thicknesses: the gate electrode, the source electrode and the drain electrode are all silver nanowires, the dielectric layer is polyvinylidene fluoride, and the thickness is 500 nm. The semiconductor layer is formed by mixing poly 3-hexylthiophene and polymethyl methacrylate (PMMA) (the content is 15%), the solvent is a mixed solution of dichlorobenzene and dimethoxyethanol (the volume ratio is 1: 1), the thickness of the prepared semiconductor layer is 25nm, and the structure can realize the organic transistor nitrogen dioxide sensor chip with high sensitivity, high responsivity and high stability.
The preparation method of the nitrogen dioxide sensor chip comprises the following steps:
1. cleaning the substrate by using a detergent, an acetone solution, deionized water and an isopropanol solution, and drying by using nitrogen after cleaning;
2. preparing a silver nanowire gate electrode on the surface of a substrate;
3. preparing a polyvinylidene fluoride dielectric layer on the gate electrode;
4. ultrasonically mixing a dielectric material polymethyl methacrylate (PMMA) and a soluble organic semiconductor material poly-3-hexylthiophene according to a proportion, and preparing a semiconductor layer on the dielectric layer by using the mixed solution in a mode of regulating and controlling a double-solvent system by an electric field;
5. and preparing a silver nanowire source electrode and a silver nanowire drain electrode on the semiconductor layer.
Example 10:
as shown in fig. 1-2, the bottom-gate top-contact structure is formed by the following materials and thicknesses: the gate electrode, the source electrode and the drain electrode are all silver nanowires, the dielectric layer is polyvinylidene fluoride, and the thickness is 500 nm. The semiconductor layer is formed by mixing poly 3-hexylthiophene and polystyrene, the solvent is a mixed solution of dichlorobenzene and ethanol (volume ratio is 1: 1), the thickness of the prepared semiconductor layer is 25nm, and the organic transistor nitrogen dioxide sensor chip with high sensitivity, high responsiveness and high stability can be realized by using the structure.
The preparation method of the nitrogen dioxide sensor chip comprises the following steps:
1. cleaning the substrate by using a detergent, an acetone solution, deionized water and an isopropanol solution, and drying by using nitrogen after cleaning;
2. preparing a silver nanowire gate electrode on the surface of a substrate;
3. preparing a polyvinylidene fluoride dielectric layer on the gate electrode;
4. ultrasonically mixing dielectric material polystyrene and soluble organic semiconductor material poly-3-hexylthiophene according to a proportion, and preparing a semiconductor layer on the dielectric layer by using the mixed solution in a mode of regulating and controlling a double-solvent system by an electric field;
5. and preparing a silver nanowire source electrode and a silver nanowire drain electrode on the semiconductor layer.
In order to prove that the proportion of the dielectric material in the semiconductor layer affects the stability and sensitivity of the nitrogen dioxide sensor chip, the following table is obtained through experiments in the embodiment of the application:
table 1: nitrogen dioxide sensor chip performance parameter table added with dielectric materials in different proportions
As can be seen from the above table, the stability and responsivity of the nitrogen dioxide sensor chip in the embodiment of the present application are affected by the proportion of polystyrene contained in the semiconductor layer, and the stability and responsivity of the nitrogen dioxide sensor chip are the best when the proportion of polystyrene is 25%.
The embodiment of the present application further provides a gas response time amperometric chart of the nitrogen dioxide sensor chip prepared by the method in the embodiment of the present application, as shown in fig. 3, in the chart, the abscissa is the response time of the nitrogen dioxide sensor chip, the ordinate is the absolute value of the current change rate, the percent responsivity on the curve, and the original current is subtracted from the detected current and then divided by the original current.
The present invention is not limited to the above-mentioned embodiments, and based on the technical solutions disclosed in the present invention, those skilled in the art can make some substitutions and modifications to some technical features without creative efforts according to the disclosed technical contents, and these substitutions and modifications are all within the protection scope of the present invention.
Claims (7)
1. The utility model provides a nitrogen dioxide sensor chip based on organic transistor, includes substrate, gate electrode, dielectric layer, semiconductor layer, source electrode and the drain electrode that from the bottom up set gradually, its characterized in that: the semiconductor layer is made of a semiconductor material of an electric field regulation double-solvent system, the semiconductor layer is made of a mixed material of a soluble organic semiconductor material and a soluble dielectric material, the mass percent of the dielectric material in the semiconductor layer is 5% -30%, the dielectric layer is made of one or a combination of more of shellac, gelatin, silk fibroin, mica and polyvinylidene fluoride, the thickness of the dielectric layer is 300-500 nm, the soluble organic semiconductor material in the semiconductor layer is made of one of poly-3-hexylthiophene, Tips-pentacene, a siloxane-containing polyisoprene derivative and a polythiophene semiconductor series, and the soluble dielectric material in the semiconductor layer is made of one of polyvinyl alcohol, polyimide, polystyrene, polymethyl methacrylate and polyethylene; the double solvents of the semiconductor layer are composed of two of chlorobenzene, dichlorobenzene, toluene, xylene, ethanol, ethylene glycol, methanol and dimethoxyethanol.
2. The organic transistor-based nitrogen dioxide sensor chip according to claim 1, wherein the thickness of the semiconductor layer is 25 to 100 nm.
3. The organic transistor-based nitrogen dioxide sensor chip according to claim 1, wherein the gate electrode, source electrode and drain electrode material is a metal nanowire made of one of silver nanowire, gold nanowire, iron nanowire, copper nanowire, cobalt nanowire, manganese nanowire, cadmium nanowire, aluminum nanowire, nickel nanowire, indium nanowire, tin nanowire, tungsten nanowire and platinum nanowire.
4. A method for preparing an organic transistor-based nitrogen dioxide sensor chip according to claim 1, comprising the steps of:
step 1: cleaning the substrate by using a detergent, an acetone solution, deionized water and an isopropyl acetone solution, and drying the substrate by using nitrogen after cleaning;
step 2: preparing the gate electrode on the surface of the substrate;
and step 3: preparing a dielectric layer on the surface of the gate electrode;
and 4, step 4: ultrasonically mixing a dielectric material and a soluble organic semiconductor material in proportion, and preparing a semiconductor layer on the dielectric layer by using a mixed solution in a mode of regulating and controlling a semiconductor material of a double-solvent system by an electric field;
and 5: and preparing a source electrode and a drain electrode on the semiconductor layer prepared in the step 4.
5. The method for preparing the organic transistor-based nitrogen dioxide sensor chip according to claim 4, wherein in the step 3, the dielectric layer is prepared by one of spin coating, roll coating, dropping film, stamping, printing or spray coating.
6. The method for preparing the organic transistor-based nitrogen dioxide sensor chip according to claim 4, wherein the semiconductor layer is prepared by one of roll coating, brush coating, blade coating, printing or spraying under the control of an electric field.
7. The method for preparing the organic transistor-based nitrogen dioxide sensor chip according to claim 4, wherein in the step 2 and the step 5, the gate electrode, the source electrode and the drain electrode are prepared by one of vacuum thermal evaporation, magnetron sputtering, plasma enhanced chemical vapor deposition, screen printing, printing or spin coating.
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