CN107565019B - One kind is based on organic field-effect tube ammonia gas sensor and preparation method thereof - Google Patents
One kind is based on organic field-effect tube ammonia gas sensor and preparation method thereof Download PDFInfo
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Abstract
The invention belongs to sensor technical fields, one kind is disclosed based on organic field-effect tube ammonia gas sensor and preparation method thereof, for solving the problems, such as that existing field effect transistor gas sensor causes at high cost due to using the material for needing to consume a large amount of manpowers and material.It is of the invention based on organic field effect tube ammonia gas sensor, including substrate layer, gate electrode, dielectric layer and the organic semiconductor layer set gradually from bottom to up, the upper end of the organic semiconductor layer is connected with source electrode and drain electrode, which is characterized in that the material of the dielectric layer is albumen；The organic semiconductor layer is made by the soluble organic semiconductor material that the albumen that mass ratio is 5%-15% is added.
Description
Technical field
The invention belongs to sensor technical fields, and in particular to one kind based on biological dielectric layer and biomaterial doped with
Organic field-effect tube ammonia gas sensor of machine layer and preparation method thereof.
Background technique
In today of industrial high speed development, people are enjoying development in science and technology to the same of our brings variation with rapid changepl. never-ending changes and improvements
When also have to begin to focus on development in science and technology bring negative effect-environmental pollution, wherein atmosphere pollution because with people's lives
It is closely bound up and be concerned.In life, people it is direct or indirect many pernicious gases, such as first are released into atmosphere
Alkane, nitric oxide, nitrogen dioxide, ammonia, sulfur dioxide and hydrogen sulfide etc., sometimes even can threat to life.It is with field-effect tube
The gas sensor that basis is constituted becomes a research hotspot of sensor field, is applied to inorganic and escaping gas
Detect existing wide coverage.Organic field effect tube gas sensor compared to resistance-type device, due to high sensitivity,
Working and room temperature is easily integrated and independent multi-parameter improves the advantages that selective, in addition what organic material itself had
Due to it is light, inexpensive, there are the advantages such as flexible, preparation method is simple, type is more, performance can be adjusted by MOLECULE DESIGN,
It is paid close attention to by people always in gas sensor domain.However, with the growth of material and manufacture craft cost, in addition people couple
The serious hope of environmentally friendly electronic material promotes the organic electronic that people research and develop low cost, preparation method is simple, type is more, environmental-friendly
Material.
Dielectric layer prepares big how much amount as one important component part of organic field effect tube, solution at this stage
Used the toxic reagents such as chlorobenzene, toluene, chloroform and methyl phenyl ethers anisole, probe into the dielectric layer material of aqueous solution or alcoholic solution a kind of at
For the important ring for realizing friendly process.And the existing material based on aqueous solution or alcoholic solution, such as fibroin albumen, gelatin, worm
Glue etc., requires greatly complicated material extraction or refinery process, this process will consume a large amount of manpower and material resources.
Summary of the invention
The present invention needs to consume a large amount of manpowers and object to solve existing field effect transistor gas sensor due to using
The material of material and lead to problem at high cost, and provide it is a kind of based on organic field-effect tube ammonia gas sensor and preparation method thereof,
Have the characteristics that preparation process simple, low production cost, environmentally protective, while having under atmospheric environment highly sensitive, high
The characteristics of stability and high life.
In order to solve the technical problem, the technical scheme adopted by the invention is that:
One kind being based on organic field effect tube ammonia gas sensor, which is characterized in that including what is set gradually from bottom to up
Substrate layer, gate electrode, dielectric layer and organic semiconductor layer, the upper end connection active electrode of the organic semiconductor layer and electric leakage
Pole, which is characterized in that the material of the dielectric layer is albumen；The organic semiconductor layer is 5%- by mass ratio has been added
The soluble organic semiconductor material of 15% albumen is made.
The albumen is egg white, pale blue, goose albumen or ostrich egg white.
The soluble organic semiconductor material is poly- 3- hexyl thiophene (P3HT), Tips- pentacene (Tips-
Pentacene), middle one kind of the polyisoprene derivative of silicone-containing or PBTTT series.
The organic semiconductor layer with a thickness of 25~100nm.
The gate electrode, source electrode and drain electrode material are metal nanometer line, and metal nanometer line is Fe nanowire, copper nanometer
Line, silver nanowires, nanowires of gold, aluminium nano wire, nickel nano wire, cobalt nanowire, manganese nano wire, cadmium nano wire, indium nano wire, tin
One of nano wire, tungsten nanowires and Pt nanowires.
A kind of preparation method of organic field effect tube ammonia body sensor, which comprises the following steps:
1. cleaning using detergent, acetone soln, deionized water and aqueous isopropanol to substrate, nitrogen is used after cleaning
Drying；
2. preparing gate electrode in substrate layer surface；
3. in gate electrode dielectric layer prepared above；
4. albumen and soluble organic semiconductor material are carried out ultrasonic mixing in proportion；Existed with mixed solution
Organic semiconductor layer is prepared on dielectric layer；
5. preparing source electrode and drain electrode on organic semiconductor layer.
Above-mentioned steps 3. in, dielectric layer is carried out by one of spin coating, roller coating, drop film, coining, printing or spraying method
Preparation.
Above-mentioned steps 4. in, the organic semiconductor layer is to get rid of spin coating, roller coating, drop film, coining, printing or spraying by dynamic
One of method prepared.
Step 2. and 5. in, gate electrode, source electrode, drain electrode are increased by vacuum thermal evaporation, magnetron sputtering, plasma
It is prepared by one of strong chemical vapor deposition, silk-screen printing, printing or spin coating method.
Compared with prior art, the invention has the following advantages:
1, since albumen contains a large amount of polar groups, such as: carboxyl, aldehyde radical and sulfur-containing group etc., it is organic partly to lead
Body layer introduces after a certain amount of albumen, and the response rate of ammonia is obviously improved, and detecting concentration lower limit is lower；
2, the method mixed by organic material and bioprotein material, the doping due to dielectric material to organic layer make
It obtains organic layer to be easier to be attached on dielectric layer, and it is more uniform and fine and close to make organic layer pattern, to make device
Air-sensitive maintains higher stability, improves transistor sensor device performance and stability, more conducively realization industrialization.
3, the method mixed by organic material and bioprotein material, improves the attachment of organic layer on the dielectric layer,
It reduces the waste of material and effectively improves device performance.
4, albumen has rich content as a kind of natural protein, without extracting, high dielectric constant, with people
The advantages that body no conflict rejection phenomenon, the use of the toxic reagents such as chlorobenzene, toluene, chloroform and methyl phenyl ethers anisole is prevented；While it
Relative to traditional biomaterial, reduces the complex techniques processes such as extraction and refinery, save man power and material.
5, since the conducting channel of organic field effect tube is in the interface of dielectric layer and organic layer, using egg white egg
White to be used as dielectric layer, on the one hand high dielectric coefficient is conducive to induce more conducting carriers, simultaneously as albumen contains
There are a large amount of polar groups, polar groups promote capture of the transistor to ammonia, due to the phase interaction of ammonia and polar groups
With enhancing the carrier mobility of device, realize sensor to improve response and sensitivity of the device to ammonia
Quick response, exist simultaneously the polar groups in interface and also further improve the response rate of ammonia.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the invention based on organic field-effect tube ammonia gas sensor；
Fig. 2 is the ammonia gas sensor gas response time current curve in case study on implementation 1；
Marked in the figure: 1, substrate layer, 2, gate electrode, 3, dielectric layer, 4, organic semiconductor layer, 5, source electrode, 6, drain electrode.
Specific embodiment
The present invention will be further described with reference to the examples below, and described embodiment is only present invention a part
Embodiment is not whole embodiment.Based on the embodiments of the present invention, those skilled in the art are not making
Other embodiments used obtained, belong to protection scope of the present invention under the premise of creative work.
It is provided by the invention to be based on organic field effect tube ammonia gas sensor in conjunction with attached drawing, including from bottom to up successively
The upper end connection of substrate layer 1, gate electrode 2, dielectric layer 3 and the organic semiconductor layer 4 of setting, the organic semiconductor layer 4 is active
Electrode 5 and drain electrode 6, the material of the dielectric layer 3 are albumen；The organic semiconductor layer 4 has the mass ratio to be by addition
The soluble organic semiconductor material of the albumen of 5%-15% is made.
As a kind of mode of selection of the present invention, the albumen is egg white, pale blue, goose albumen or Ostrich egg
Clearly.
Soluble organic semiconductor material of the invention is poly- 3- hexyl thiophene (P3HT), Tips- pentacene (Tips-
Pentacene), middle one kind of the polyisoprene derivative of silicone-containing or PBTTT series.
The organic semiconductor layer 4 with a thickness of 25~100nm.
The gate electrode, source electrode and drain electrode material are metal nanometer line, and metal nanometer line is Fe nanowire, copper nanometer
Line, silver nanowires, nanowires of gold, aluminium nano wire, nickel nano wire, cobalt nanowire, manganese nano wire, cadmium nano wire, indium nano wire, tin
One of nano wire, tungsten nanowires and Pt nanowires.
A kind of preparation method of organic field effect tube ammonia body sensor, comprising the following steps:
1. cleaning using detergent, acetone soln, deionized water and aqueous isopropanol to substrate layer, nitrogen is used after cleaning
Air-blowing is dry；
2. preparing gate electrode in substrate layer surface；
3. in gate electrode dielectric layer prepared above；
4. albumen and soluble organic semiconductor material are carried out ultrasonic mixing in proportion；Existed with mixed solution
Organic semiconductor layer is prepared on dielectric layer；
5. preparing source electrode and drain electrode on organic semiconductor layer.
Above-mentioned steps 3. in, dielectric layer is carried out by one of spin coating, roller coating, drop film, coining, printing or spraying method
Preparation.
Above-mentioned steps 4. in, the organic semiconductor layer is to get rid of spin coating, roller coating, drop film, coining, printing or spraying by dynamic
One of method prepared.
Step 2. and 5. in, gate electrode, source electrode, drain electrode are increased by vacuum thermal evaporation, magnetron sputtering, plasma
It is prepared by one of strong chemical vapor deposition, silk-screen printing, printing or spin coating method.
Embodiment 1
It is as shown in Figure 1 bottom gate apical grafting touch structure, gate electrode 2, source electrode 5 and drain electrode 6 are silver nanowires, dielectric
Layer 3 uses egg white powder, with a thickness of 200nm；Organic semiconductor layer 4 is poly- 3- hexyl thiophene (P3HT) and albumen (matter
Measuring accounting is that 10%) mixing is constituted, with a thickness of 30nm.High sensitivity, a kind of field-effect of high stability can be realized with the structure
Transistor gas sensor.
1. being cleaned with detergent, acetone soln, deionized water and aqueous isopropanol to substrate layer, nitrogen is used after cleaning
Drying；
2. substrate layer surface prepares gate electrode；
3. the gate electrode dielectric layer prepared above；
4. albumen and soluble organic semiconductor material are carried out ultrasonic mixing in proportion.Existed with mixed solution
Dielectric layer
On prepare organic semiconductor layer；
5. preparing source electrode and drain electrode on organic semiconductor layer.
Embodiment 2
It is as shown in Figure 1 bottom gate apical grafting touch structure, gate electrode, source electrode and drain electrode are copper nano-wire, dielectric layer
Using duck's egg albumin, with a thickness of 500nm；Organic semiconductor layer is Tips- pentacene (Tips-pentacene) and egg white egg
White (it is 15% that mass ratio, which accounts for) mixing is constituted, with a thickness of 30nm.High sensitivity, a kind of effect of high life can be realized with the structure
Answer transistor gas sensor.
1. cleaning using detergent, acetone soln, deionized water and aqueous isopropanol to substrate layer, nitrogen is used after cleaning
Air-blowing is dry；
2. preparing gate electrode in substrate layer surface；
3. the gate electrode dielectric layer prepared above；
4. albumen and soluble organic semiconductor material are carried out ultrasonic mixing in proportion.Existed with mixed solution
Organic semiconductor layer is prepared on dielectric layer；
5. preparing source electrode and drain electrode on organic semiconductor layer；
Embodiment 3
It is as shown in Figure 1 bottom gate apical grafting touch structure, the material and thickness of each layer are as follows: gate electrode, source electrode and drain electrode
It is copper nano-wire, dielectric layer uses goose egg albumin, and with a thickness of 600nm, organic semiconductor layer is Tips- pentacene (Tips-
Pentacene composition) is mixed with albumen (quality accounting is 5%), with a thickness of 50nm.It can be realized with the structure highly sensitive
Degree, a kind of field effect transistor gas sensor of high life.
1. cleaning using detergent, acetone soln, deionized water and aqueous isopropanol to substrate, nitrogen is used after cleaning
Drying；
2. preparing gate electrode in substrate surface；
3. in gate electrode dielectric layer prepared above；
4. albumen and soluble organic semiconductor material are carried out ultrasonic mixing in proportion.Existed with mixed solution
Organic semiconductor layer is prepared on dielectric layer；
5. preparing source electrode and drain electrode on organic semiconductor layer.
Embodiment 4
It is as shown in Figure 1 bottom gate apical grafting touch structure, the material and thickness of each layer are as follows: gate electrode, source electrode and drain electrode
It is copper nano-wire, dielectric layer uses goose egg albumin, with a thickness of 300nm；Organic semiconductor layer is the poly- isoamyl of silicone-containing
Diene derivatives mix composition with albumen (it is 10% that quality, which accounts for), with a thickness of 80nm.High sensitivity can be realized with the structure,
A kind of field effect transistor gas sensor of high stability.
1. cleaning using detergent, acetone soln, deionized water and aqueous isopropanol to substrate, nitrogen is used after cleaning
Drying；
2. preparing gate electrode in substrate surface；
3. in gate electrode dielectric layer prepared above；
4. albumen and soluble organic semiconductor material are carried out ultrasonic mixing in proportion.Existed with mixed solution
Organic semiconductor layer is prepared on dielectric layer；
5. preparing source electrode and drain electrode on organic semiconductor layer.
Embodiment 5
It is as shown in Figure 1 bottom gate apical grafting touch structure, the material and thickness of each layer are as follows: gate electrode, source electrode and drain electrode
It is copper nano-wire, dielectric layer uses egg white powder, and with a thickness of 500nm, organic semiconductor layer is the poly- isoamyl of silicone-containing
Diene derivatives mix composition with albumen (quality accounting 30%), with a thickness of 100nm.It can be realized with the structure highly sensitive
Degree, a kind of field effect transistor gas sensor of high stability.
1. cleaning using detergent, acetone soln, deionized water and aqueous isopropanol to substrate, nitrogen is used after cleaning
Drying；
2. preparing gate electrode in substrate surface；
3. in gate electrode dielectric layer prepared above；
4. albumen and soluble organic semiconductor material are carried out ultrasonic mixing in proportion.Existed with mixed solution
Organic semiconductor layer is prepared on dielectric layer；
5. preparing source electrode and drain electrode on organic semiconductor layer.
Embodiment 6
It is as shown in Figure 1 bottom gate apical grafting touch structure, the material and thickness of each layer are as follows: gate electrode, source electrode and drain electrode
It is copper nano-wire, dielectric layer uses egg white powder, with a thickness of 400nm；Organic semiconductor layer is poly- 3- hexyl thiophene
(P3HT) composition is mixed with albumen (quality accounting 10%), with a thickness of 25nm.High sensitivity, Gao Wen can be realized with the structure
A kind of qualitative field effect transistor gas sensor.
1. cleaning using detergent, acetone soln, deionized water and aqueous isopropanol to substrate, nitrogen is used after cleaning
Drying；
2. preparing gate electrode in substrate surface；
3. in gate electrode dielectric layer prepared above；
4. albumen and soluble organic semiconductor material are carried out ultrasonic mixing in proportion.Existed with mixed solution
Organic semiconductor layer is prepared on dielectric layer；
5. preparing source electrode and drain electrode on organic semiconductor layer.
Embodiment 7
It is as shown in Figure 1 bottom gate apical grafting touch structure, the material and thickness of each layer are as follows: gate electrode, source electrode and drain electrode
It is copper nano-wire, dielectric layer uses duck's egg albumin, with a thickness of 500nm；Organic semiconductor layer is poly- 3- hexyl thiophene
(P3HT) composition is mixed with albumen (it is 10% that quality, which accounts for), with a thickness of 40nm.High sensitivity, Gao Wen can be realized with the structure
A kind of qualitative field effect transistor gas sensor.
1. cleaning using detergent, acetone soln, deionized water and aqueous isopropanol to substrate, nitrogen is used after cleaning
Drying；
2. preparing gate electrode in substrate surface；
3. in gate electrode dielectric layer prepared above；
4. albumen and soluble organic semiconductor material are carried out ultrasonic mixing in proportion.Existed with mixed solution
Organic semiconductor layer is prepared on dielectric layer；
5. preparing source electrode and drain electrode on organic semiconductor layer.
Embodiment 8
It is as shown in Figure 1 bottom gate apical grafting touch structure, the material and thickness of each layer are as follows: gate electrode, source electrode and drain electrode
It is copper nano-wire, dielectric layer uses ostrich albumen, with a thickness of 500nm；Organic semiconductor layer is poly- 3- hexyl thiophene
(P3HT) composition is mixed with albumen (it is 15% that quality, which accounts for), with a thickness of 50nm.High sensitivity, Gao Ling can be realized with the structure
A kind of field effect transistor gas sensor of sensitivity.
1. cleaning using detergent, acetone soln, deionized water and aqueous isopropanol to substrate, nitrogen is used after cleaning
Drying；
2. preparing gate electrode in substrate surface；
3. in gate electrode dielectric layer prepared above；
4. albumen and soluble organic semiconductor material are carried out ultrasonic mixing in proportion.Existed with mixed solution
Organic semiconductor layer is prepared on dielectric layer；
5. preparing source electrode and drain electrode on organic semiconductor layer.
Embodiment 9
It is as shown in Figure 1 bottom gate apical grafting touch structure, the material and thickness of each layer are as follows: gate electrode, source electrode and drain electrode
It is copper nano-wire, dielectric layer uses goose egg albumin, with a thickness of 500nm；Organic semiconductor layer is poly- 3- hexyl thiophene
(P3HT) composition is mixed with albumen (quality accounting is 15%), with a thickness of 50nm.High sensitivity can be realized with the structure, it is high
A kind of field effect transistor gas sensor of sensitivity.
1. cleaning using detergent, acetone soln, deionized water and aqueous isopropanol to substrate, nitrogen is used after cleaning
Drying；
2. preparing gate electrode in substrate surface；
3. in gate electrode dielectric layer prepared above；
4. albumen and soluble organic semiconductor material are carried out ultrasonic mixing in proportion.Existed with mixed solution
Organic semiconductor layer is prepared on dielectric layer；
5. preparing source electrode and drain electrode on organic semiconductor layer.
Embodiment 10
It is as shown in Figure 1 bottom gate apical grafting touch structure, the material and thickness of each layer are as follows: gate electrode, source electrode and drain electrode
It is copper nano-wire, dielectric layer uses egg white powder, with a thickness of 500nm；Organic semiconductor layer is poly- 3- hexyl thiophene
(P3HT) composition is mixed with albumen (quality accounting is 30%), with a thickness of 80nm.High sensitivity can be realized with the structure, it is high
A kind of field effect transistor gas sensor of sensitivity.
1. cleaning using detergent, acetone soln, deionized water and aqueous isopropanol to substrate, nitrogen is used after cleaning
Drying；
2. preparing gate electrode in substrate surface；
3. in gate electrode dielectric layer prepared above；
4. albumen and soluble organic semiconductor material are carried out ultrasonic mixing in proportion.Existed with mixed solution
Organic semiconductor layer is prepared on dielectric layer；
5. preparing source electrode and drain electrode on organic semiconductor layer.
Claims (9)
1. one kind be based on organic field effect tube ammonia gas sensor, including set gradually from bottom to up substrate layer, gate electrode,
The upper end of dielectric layer and organic semiconductor layer, the organic semiconductor layer is connected with source electrode and drain electrode, which is characterized in that institute
The material for giving an account of electric layer is albumen；The organic semiconductor layer is by being added the albumen that mass ratio is 5%-15%
Soluble organic semiconductor material is made.
2. according to claim 1 be based on organic field effect tube ammonia gas sensor, which is characterized in that the egg white egg
White is egg white, pale blue, goose albumen or ostrich egg white.
3. according to claim 1 be based on organic field effect tube ammonia gas sensor, which is characterized in that the solubility
Organic semiconducting materials are poly- 3- hexyl thiophene, Tips- pentacene, the polyisoprene derivative of silicone-containing or PBTTT system
Middle one kind of column.
4. according to claim 1 be based on organic field effect tube ammonia gas sensor, which is characterized in that described organic half
Conductor layer with a thickness of 25~100nm.
5. according to claim 1 be based on organic field effect tube ammonia gas sensor, which is characterized in that the grid electricity
Pole, source electrode and drain electrode material are metal nanometer line, and metal nanometer line is Fe nanowire, copper nano-wire, silver nanowires, Jenner
Rice noodles, aluminium nano wire, nickel nano wire, cobalt nanowire, manganese nano wire, cadmium nano wire, indium nano wire, stannum nanowire, tungsten nanowires
One of with Pt nanowires.
6. a kind of preparation method based on organic field effect tube ammonia body sensor, which comprises the following steps:
1. being cleaned using detergent, acetone soln, deionized water and aqueous isopropanol to substrate, blown after cleaning with nitrogen
It is dry；
2. preparing gate electrode in substrate layer surface；
3. in gate electrode dielectric layer prepared above；
4. albumen and soluble organic semiconductor material are carried out ultrasonic mixing in proportion；With mixed solution in dielectric
Organic semiconductor layer is prepared on layer；
5. preparing source electrode and drain electrode on organic semiconductor layer.
7. the preparation method according to claim 6 based on organic field effect tube ammonia body sensor, which is characterized in that
Step 3. in, dielectric layer is prepared by one of spin coating, roller coating, drop film, coining, printing or spraying method.
8. the preparation method according to claim 6 based on organic field effect tube ammonia body sensor, which is characterized in that
Step 4. in, the organic semiconductor layer is to get rid of one of spin coating, roller coating, drop film, coining, printing or spraying method by dynamic
It is prepared.
9. the preparation method according to claim 6 based on organic field effect tube ammonia body sensor, which is characterized in that
Step 2. and 5. in, gate electrode, source electrode, drain electrode be by vacuum thermal evaporation, magnetron sputtering, plasma enhancing chemistry
It is prepared by one of vapor deposition, silk-screen printing, printing or spin coating method.
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| CN108896717B (en) * | 2018-07-24 | 2021-08-03 | 京东方科技集团股份有限公司 | Chemical sensing unit, chemical sensor and chemical sensing device |
| CN109270131A (en) * | 2018-09-17 | 2019-01-25 | 电子科技大学 | A kind of OTFT ammonia gas sensor and preparation method thereof embedded with micromolecule additive |
| CN109326724B (en) * | 2018-09-19 | 2020-06-23 | 电子科技大学 | Photosensitive sensor based on organic field effect transistor and preparation method thereof |
| CN109541001B (en) * | 2018-11-14 | 2021-02-05 | 长春工业大学 | Preparation method of organic nanofiber gas-sensitive film NO2 gas sensor based on polymer carrier |
| CN109946338A (en) * | 2019-02-28 | 2019-06-28 | 肇庆市华师大光电产业研究院 | A kind of environmental gas detection method based on small organic molecule thin film transistor (TFT) |
| CN109828015B (en) * | 2019-03-07 | 2021-07-06 | 江苏友润微电子有限公司 | Ammonia gas sensor chip based on organic transistor and preparation method thereof |
| GB2584892B (en) * | 2019-06-20 | 2022-06-01 | Sumitomo Chemical Co | Semiconductor gas sensor and gas sensing method |
| CN110243789B (en) * | 2019-06-28 | 2022-07-08 | 京东方科技集团股份有限公司 | Gas monitoring device, gas monitoring method and display device |
| CN110455978B (en) * | 2019-06-30 | 2021-09-14 | 北京联合大学 | Benzene and ammonia low-temperature catalytic luminescence cross-sensitive material |
| CN112051316A (en) * | 2020-08-28 | 2020-12-08 | 电子科技大学 | Ammonia gas sensor based on organic thin film transistor and preparation method thereof |
| CN112531115B (en) * | 2020-12-14 | 2022-08-02 | 电子科技大学 | Nitrogen dioxide sensor based on organic field effect transistor and preparation method thereof |
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| CN104849336B (en) * | 2015-04-22 | 2018-01-19 | 电子科技大学 | Organic field effect tube gas sensor and preparation method thereof |
| CN105334257A (en) * | 2015-11-25 | 2016-02-17 | 电子科技大学 | OFET (Organic Field Effect Transistor) ammonia gas sensor containing functional insulation layer |
| CN105510389A (en) * | 2015-11-26 | 2016-04-20 | 电子科技大学 | Humidity sensor based on organic field-effect transistor and preparation method thereof |
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