CN105334257A - OFET (Organic Field Effect Transistor) ammonia gas sensor containing functional insulation layer - Google Patents
OFET (Organic Field Effect Transistor) ammonia gas sensor containing functional insulation layer Download PDFInfo
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- CN105334257A CN105334257A CN201510826827.2A CN201510826827A CN105334257A CN 105334257 A CN105334257 A CN 105334257A CN 201510826827 A CN201510826827 A CN 201510826827A CN 105334257 A CN105334257 A CN 105334257A
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
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Abstract
The invention discloses an OFET (Organic Field Effect Transistor) ammonia gas sensor containing a functional insulation layer. The OFET ammonia gas sensor comprises a substrate, an insulation layer a, the functional insulation layer, an insulation layer b and an organic semiconductor layer which are sequentially arranged from bottom to top, wherein the organic semiconductor layer is provided with a source electrode and a drain electrode; a gate electrode is arranged between the substrate and the insulation layer a; the insulation layer a and the insulation layer b are formed by polymer insulation materials which do not contain hydroxyl; the functional insulation layer is formed by a polymer insulation material which contains the hydroxyl. According to the OFET ammonia gas sensor disclosed by the invention, a functional insulation layer material containing the hydroxyl is introduced between two insulation layers, so that the gas sensing property of an OFET is increased; -OH contained in the hydroxyl in the functional insulation layer can be subjected to reversion when ammonia gas molecules permeate into an interface of the insulation layers/the organic semiconductor layer, so that hole charges in corresponding number can be induced, parameters of saturation current, a migration rate and the like of devices are enabled to change, and detection on ammonia gas can be realized.
Description
Technical field
The invention belongs to sensor preparing technical field, particularly a kind of organic field-effect tube ammonia gas sensor containing functional insulation layer.This gas sensor, by adding the polymer insulation layer of hydroxyl, both can realize promoting ammonia detectability, and can significantly improve device environmental stability again.
Background technology
Develop rapidly along with electronics and the application in sensor field thereof, the chemical sensor formed based on field effect transistor becomes a study hotspot of sensor field, is applied to inorganic and detection that is escaping gas and has wide coverage.Compared with traditional gas sensor, based on field-effect tube structure gas sensor except have highly sensitive, the advantage such as can to use at normal temperatures except, also there is several remarkable advantage:
1) transistor fundamental characteristics is utilized to be the curent change easily detected by the high resistance change transitions being difficult to detect;
2) sensitivity of sensor is regulated by the gate operational voltages of suitable selector;
3) multiparameter model more has the identification and analysis that utilize gas;
4) be easy to integrated, large area sensor array can be prepared, be convenient to integrated, microminiaturized future development.
But existing field effect gas transducer can in atmospheric environment steady operation, mostly be silica-based field effect transistor, a large amount of can to environment when using, preparation process is complicated, involves great expense, and not easily realizes flexibility, broad area device; On the other side, insulating material of polymer, cheap, preparation process is simple, is easy to prepare large area flexible device, but is easy to sex change in atmosphere, the insulating material of polymer particularly containing hydroxyl very easily with water molecules; Simultaneously, as field effect transistor important component part insulation course, insulating material of polymer can realize solwution method preparation, can form the good film of quality at low temperatures, wherein the polymeric material of hydroxyl can also adopt water, alcohol solvent system, reduces the harm to environment further.
The existing organic field-effect tube ammonia gas sensor based on p-type organic semiconductor material, when detecting ammonia, its Parameters variation is negative sense change, namely saturation current, mobility reduce, threshold voltage negative sense drifts about, although there is good restorability, under high strength high concentration testing environment, very easily poisoning, cause device failure.Based on the organic field-effect tube ammonia gas sensor of N-shaped organic semiconducting materials then because its inadequate natural endowment in air stability, seldom apply.
Summary of the invention
The object of the invention is to improve existing organic field-effect tube ammonia gas sensor shortcoming, supplement the deficiency of traditional silicon base field-effect tube ammonia gas sensor, there is provided a kind of preparation technology simple, low production cost, can realize a kind of organic field-effect tube ammonia gas sensor containing functional insulation layer to object gas stable detection under atmospheric environment.
Technical scheme of the present invention is:
A kind of organic field-effect tube ammonia gas sensor containing functional insulation layer, comprise substrate, gate electrode, insulation course a, functional insulation layer, insulation course b, organic semiconductor layer, source electrode and drain electrode, described gate electrode is arranged and substrate, insulation course a is arranged on gate electrode, functional insulation layer is arranged on insulation course a, insulation course b is arranged on functional insulation layer, and organic semiconductor layer is arranged and on insulation course b, source electrode and drain electrode are arranged on organic semiconductor layer respectively; Described insulation course a, b are made up of the insulating material of polymer of not hydroxyl, and described functional insulation layer is made up of the insulating material of polymer of hydroxyl.
Further, described functional insulation layer is the one in ammonia functional graphene oxide, poly-(4-Vinyl phenol), poly-(4-Vinyl phenol-co-methyl methacrylate), polyvinyl alcohol (PVA), and thickness is 50nm ~ 100nm.
Further, described insulation course a, b can be of the same race or bi-material, for polystyrene, poly-(dimethyl siloxane), poly-(bisphenol-A-co-4-nitrophthalic anhydride-co-1, 3-phenylenediamine), poly-(bisphenol a carbonate), poly-(4-methyl-1-pentene), 1, 2-bis-(silicochloroform base) ethane, 1, 6-bis-(silicochloroform base) hexane, poly-(4-t-butyl styrene), polyisobutylene, polymethylmethacrylate, 2, 4, 6, 8-tetramethyl-ring tetrasiloxane, 4 '-hexyl-(1, 1 '-xenyl)-4-nitrile, trimethoxy (octadecyl) silane, carbonic allyl ester, poly-[1, two (4-Phenoxyphenyl) ketone of 4-phenyl dicarbonyl-alt-], 2, 3, 5, one in 6-TMPD, thickness is 100nm ~ 200nm.
Further, described organic semiconductor layer is made up of p-type organic semiconductor, for CuPc, benzanthrene, rubrene, pentacene, tetrathiafulvalene, two (ethylene mercaptan) four thio rich tile alkene, 6,13-two (triisopropyl silylethynyl) pentacene, six thiophene, 5,5 '-two (4-xenyl)-2,2 '-bithiophene, 5,5 '-dihexyl-2,2 '-bithiophene, poly-(3-hexyl thiophene-2,5-bis-base), one in the polyisoprene derivant of silicone-containing, described layer semiconductor thickness is 30 ~ 50nm.
Further, described gate electrode, source electrode and drain electrode are made up of the one in gold, silver, copper or Aluminum-aluminum alloy material, and the thickness of source electrode and drain electrode is 30nm ~ 80nm.
Further, described substrate is one or more in silicon chip, glass, thin polymer film, metal forming, vegetable fibre, fibrin gel, gelatin, PLA, viral fiber element, Poly(D,L-lactide-co-glycolide.
Further, described gate electrode, source electrode, drain electrode are by a kind of method preparation in the chemical vapor deposition of vacuum thermal evaporation, magnetron sputtering, plasma enhancing, serigraphy, printing or spin coating, described insulation course is by spin coating, roller coat, a kind of method preparation of dripping in film, impression, printing or spraying, and described organic semiconductor layer is by the chemical vapor deposition of plasma enhancing, thermal oxide, spin coating, vacuum evaporation, roller coat, a kind of method preparation of dripping in film, impression, printing or spraying
Compared with prior art, the invention has the advantages that:
One, the effect of functional insulation layer is that it contains hydroxyl, and under negative voltage effect, its-OH can reverse, can in insulation course/generation hole, organic semiconductor bed interface, under ammonia effect, the hole charge concentration of generation can significantly rise, thus improves ammonia detectivity.
Two, the present invention by introducing the insulating layer material containing hydroxyl between dielectric layers, improves the gas-sensitive property of organic field-effect tube; When ammonia molecule penetrates into insulation course/organic semiconductor bed interface,-the OH that hydroxyl in functional insulation layer contains can reverse, thus induces the hole charge of respective numbers, causes the saturation current of device, the parameter changes such as mobility, thus realize the detection to ammonia; Relative to other same type of sensor, this sensor relies on lower to organic semiconductor, and insulation course wide material sources are with low cost simultaneously, and preparation technology is also extremely simple, and without the need to follow-up method for packing, extensive, quick industrialization preferably is produced.
Three, by introducing functional insulation layer, realize the effective raising to ammonia detection performance, and its Parameters variation is that forward strengthens change, namely saturation current, mobility become large, restorability good (contrary with the existing ammonia gas sensor based on p-type organic semiconductor material);
Four, relative and traditional silicon base field-effect tube gas sensor, the present invention can work continually and steadily under atmospheric environment, and material requested, preparation process green non-pollution.
Accompanying drawing explanation
Fig. 1 is structure rough schematic of the present invention;
In figure: 1-substrate, 2-gate electrode, 3-insulation course a, 4-functional insulation layer, 5-insulation course b, 6-organic semiconductor layer, 7-source electrode, 8-drain electrode.
Fig. 2 is that the ammonia of device to continually varying variable concentrations prepared by the embodiment of the present invention 1 achieves effective detection.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
With reference to Fig. 1, a kind of organic field-effect tube ammonia gas sensor containing functional insulation layer, comprise 1 substrate, 2 gate electrodes, 3 insulation course a, 4 functional insulation layer, 5 insulation course b, 6 organic semiconductor layers, 7 source electrodes and drain electrode 8, described gate electrode is arranged and substrate, insulation course a is arranged on gate electrode, functional insulation layer is arranged on insulation course a, insulation course b is arranged on functional insulation layer, organic semiconductor layer is arranged and on insulation course b, source electrode and drain electrode are arranged on organic semiconductor layer respectively.
Below specific embodiments of the invention:
Embodiment 1:
Be illustrated in figure 1 bottom gate apical grafting touch structure, the material of each layer and thickness are: substrate 1 is glass, and gate electrode 2 is aluminium, thickness is 30nm, and insulation course a3 is polymethylmethacrylate, and thickness is 100nm, functional insulation layer 4 is polyvinyl alcohol (PVA), thickness is 30nm, and insulation course b5 is polymethylmethacrylate, and thickness is 100nm, organic semiconductor layer 6 is CuPc, thickness is 30nm, and source electrode and drain electrode 7 are Au, and thickness is 30nm.
Preparation method is as follows:
1. substrate 1 is cleaned thoroughly, dry up with drying nitrogen after cleaning;
2. at substrate 1 surface sputtering gate electrode;
3. spincoating insulating layer a on described gate electrode;
4. on described insulation course a, spin-coating method is adopted to prepare functional insulation layer;
5. in described functional insulation layer, adopt spin-coating method to prepare insulation course a;
6. on insulation course b, organic semiconductor layer is prepared by vacuum evaporation;
7. vacuum vapour deposition is adopted to prepare source electrode and drain electrode on the semiconductor layer.
Embodiment 2:
Be illustrated in figure 1 bottom gate apical grafting touch structure, the material of each layer and thickness are: substrate 1 is glass, and gate electrode 2 is ITO, thickness is 80nm, and insulation course a3 is polymethylmethacrylate, and thickness is 200nm, functional insulation layer 4 is polyvinyl alcohol (PVA), thickness is 50nm, and insulation course b5 is polymethylmethacrylate, and thickness is 200nm, organic semiconductor layer 6 is pentacene, thickness is 50nm, and source electrode and drain electrode 7 are Au, and thickness is 80nm.
Preparation method is as embodiment 1.
Embodiment 3:
Be illustrated in figure 1 bottom gate apical grafting touch structure, the material of each layer and thickness are: substrate 1 is glass, and gate electrode 2 is ITO, thickness is 50nm, and insulation course a3 is polymethylmethacrylate, and thickness is 200nm, functional insulation layer 4 is polyvinyl alcohol (PVA), thickness is 50nm, and insulation course b5 is polystyrene, and thickness is 200nm, organic semiconductor layer 6 is pentacene, thickness is 50nm, and source electrode and drain electrode 7 are Au, and thickness is 80nm.
Preparation method is as embodiment 1.
Embodiment 4:
Be illustrated in figure 1 bottom gate apical grafting touch structure, the material of each layer and thickness are: substrate 1 is glass, and gate electrode 2 is aluminium, thickness is 50nm, and insulation course a3 is polymethylmethacrylate, and thickness is 150nm, functional insulation layer 4 is poly-(4-Vinyl phenol), thickness is 50nm, and insulation course b5 is polymethylmethacrylate, and thickness is 100nm, organic semiconductor layer 6 is pentacene, thickness is 50nm, and source electrode and drain electrode 7 are Au, and thickness is 80nm.
Preparation method is as embodiment 1.
Embodiment 5:
Be illustrated in figure 1 bottom gate apical grafting touch structure, the material of each layer and thickness are: substrate 1 is glass, and gate electrode 2 is aluminium, thickness is 50nm, and insulation course a3 is polymethylmethacrylate, and thickness is 150nm, functional insulation layer 4 is poly-(4-Vinyl phenol), thickness is 50nm, and insulation course b5 is polymethylmethacrylate, and thickness is 100nm, organic semiconductor layer 6 is six thiophene, thickness is 50nm, and source electrode and drain electrode 7 are Au, and thickness is 80nm.
Preparation method is as embodiment 1.
Embodiment 6:
Be illustrated in figure 1 bottom gate apical grafting touch structure, the material of each layer and thickness are: substrate 1 is glass, gate electrode 2 is ITO, thickness is 80nm, insulation course a3 is polymethylmethacrylate, thickness is 200nm, functional insulation layer 4 is polyvinyl alcohol (PVA), and thickness is 50nm, and insulation course b5 is polymethylmethacrylate, thickness is 200nm, organic semiconductor layer 6 is two (triisopropyl silylethynyl) pentacene of 6,13-, and thickness is 50nm, source electrode and drain electrode 7 are Au, and thickness is 80nm.
Preparation method is as follows:
1. substrate 1 is cleaned thoroughly, dry up with drying nitrogen after cleaning;
2. at substrate 1 surface sputtering gate electrode;
3. spincoating insulating layer a on described gate electrode;
4. on described insulation course a, spin-coating method is adopted to prepare functional insulation layer;
5. in described functional insulation layer, adopt spin-coating method to prepare insulation course a;
6. on insulation course b, organic semiconductor layer is prepared by spin-coating method;
7. vacuum vapour deposition is adopted to prepare source electrode and drain electrode on the semiconductor layer..
Embodiment 7:
Be illustrated in figure 1 bottom gate apical grafting touch structure, the material of each layer and thickness are: substrate 1 is glass, and gate electrode 2 is ITO, thickness is 80nm, and insulation course a3 is polymethylmethacrylate, and thickness is 200nm, functional insulation layer 4 is polyvinyl alcohol (PVA), and thickness is 50nm, and insulation course b5 is polymethylmethacrylate, thickness is 200nm, organic semiconductor layer 6 is poly-(3-hexyl thiophene-2,5-bis-base), and thickness is 50nm, source electrode and drain electrode 7 are Au, and thickness is 80nm.
Preparation method is as follows:
1. substrate 1 is cleaned thoroughly, dry up with drying nitrogen after cleaning;
2. at substrate 1 surface sputtering gate electrode;
3. spincoating insulating layer a on described gate electrode;
4. on described insulation course a, spin-coating method is adopted to prepare functional insulation layer;
5. in described functional insulation layer, adopt spin-coating method to prepare insulation course a;
6. on insulation course b, organic semiconductor layer is prepared by spraying process;
7. vacuum vapour deposition is adopted to prepare source electrode and drain electrode on the semiconductor layer.
Embodiment 8:
Be illustrated in figure 1 bottom gate apical grafting touch structure, the material of each layer and thickness are: substrate 1 is glass, and gate electrode 2 is ITO, thickness is 80nm, and insulation course a3 is polymethylmethacrylate, and thickness is 200nm, functional insulation layer 4 is polyvinyl alcohol (PVA), and thickness is 50nm, and insulation course b5 is polymethylmethacrylate, thickness is 200nm, organic semiconductor layer 6 is poly-(3-hexyl thiophene-2,5-bis-base), and thickness is 50nm, source electrode and drain electrode 7 are Ag, and thickness is 80nm.
Preparation method is as follows:
1. substrate 1 is cleaned thoroughly, dry up with drying nitrogen after cleaning;
2. at substrate 1 surface sputtering gate electrode;
3. spincoating insulating layer a on described gate electrode;
4. on described insulation course a, spin-coating method is adopted to prepare functional insulation layer;
5. in described functional insulation layer, adopt spin-coating method to prepare insulation course a;
6. on insulation course b, organic semiconductor layer is prepared by spraying process;
7. silk screen print method is adopted to prepare source electrode and drain electrode on the semiconductor layer.
Claims (7)
1. the organic field-effect tube ammonia gas sensor containing functional insulation layer, comprise the substrate (1) set gradually from bottom to up, insulation course a(3), functional insulation layer (4), insulation course b(5), organic semiconductor layer (6), organic semiconductor layer (6) is provided with source electrode (7) and drain electrode (8), substrate (1) and insulation course a(3) between be also provided with gate electrode (2), described insulation course a(3), insulation course b(5) be made up of the insulating material of polymer of not hydroxyl, described functional insulation layer (4) is made up of the insulating material of polymer of hydroxyl.
2. a kind of organic field-effect tube ammonia gas sensor containing functional insulation layer according to claim 1, it is characterized in that, described functional insulation layer (4) is ammonia functional graphene oxide, poly-(4-Vinyl phenol), poly-(4-Vinyl phenol-co-methyl methacrylate), any one in polyvinyl alcohol (PVA), thickness is 50nm ~ 100nm.
3. a kind of organic field-effect tube ammonia gas sensor containing functional insulation layer according to claim 1, it is characterized in that, described insulation course a(3), insulation course b(5) material, for polystyrene, poly-(dimethyl siloxane), poly-(bisphenol-A-co-4-nitrophthalic anhydride-co-1, 3-phenylenediamine), poly-(bisphenol a carbonate), poly-(4-methyl-1-pentene), 1, 2-bis-(silicochloroform base) ethane, 1, 6-bis-(silicochloroform base) hexane, poly-(4-t-butyl styrene), polyisobutylene, polymethylmethacrylate, 2, 4, 6, 8-tetramethyl-ring tetrasiloxane, 4 '-hexyl-(1, 1 '-xenyl)-4-nitrile, trimethoxy (octadecyl) silane, carbonic allyl ester, poly-[1, two (4-Phenoxyphenyl) ketone of 4-phenyl dicarbonyl-alt-], 2, 3, 5, one in 6-TMPD, thickness is 100nm ~ 200nm.
4. a kind of organic field-effect tube ammonia gas sensor containing functional insulation layer according to claim 1, it is characterized in that, described organic semiconductor layer (6) is made up of p-type organic semiconductor, be specially CuPc, benzanthrene, rubrene, pentacene, tetrathiafulvalene, two (ethylene mercaptan) four thio rich tile alkene, 6, two (triisopropyl silylethynyl) pentacene of 13-, six thiophene, 5, 5 '-two (4-xenyl)-2, 2 '-bithiophene, 5, 5 '-dihexyl-2, 2 '-bithiophene, poly-(3-hexyl thiophene-2, 5-bis-base), any one in the polyisoprene derivant of silicone-containing, described layer semiconductor thickness is 30 ~ 50nm.
5. a kind of organic field-effect tube ammonia gas sensor containing functional insulation layer according to claim 1, it is characterized in that, described gate electrode (2), source electrode (7) and drain electrode (8) are made up of the one in gold, silver, copper or Aluminum-aluminum alloy material, and the thickness of source electrode and drain electrode is 30nm ~ 80nm.
6. a kind of organic field-effect tube ammonia gas sensor containing functional insulation layer according to claim 1, it is characterized in that, described substrate (1) is silicon chip, glass, thin polymer film, metal forming, vegetable fibre, fibrin gel, gelatin, PLA, viral fiber element, one or more in Poly(D,L-lactide-co-glycolide.
7. a kind of organic field-effect tube ammonia gas sensor containing functional insulation layer according to claim 1, it is characterized in that, described gate electrode (2), source electrode (7), drain electrode (8) passes through vacuum thermal evaporation, magnetron sputtering, the chemical vapor deposition of plasma enhancing, serigraphy, print or a kind of method preparation in spin coating, described insulation course a(3) or insulation course b(5) pass through spin coating, roller coat, drip film, impression, printing or a kind of method preparation in spraying, described organic semiconductor layer (6) is the chemical vapor deposition by plasma enhancing, thermal oxide, spin coating, vacuum evaporation, roller coat, drip film, impression, printing or a kind of method preparation in spraying.
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| CN107565019A (en) * | 2017-08-30 | 2018-01-09 | 电子科技大学 | One kind is based on organic field-effect tube ammonia gas sensor and preparation method thereof |
| CN109270131A (en) * | 2018-09-17 | 2019-01-25 | 电子科技大学 | A kind of OTFT ammonia gas sensor and preparation method thereof embedded with micromolecule additive |
| CN109975368A (en) * | 2019-03-21 | 2019-07-05 | 西南大学 | A kind of preparation method of the graphene oxidation tin composite material for gas sensing |
| CN112034014A (en) * | 2020-08-21 | 2020-12-04 | 山东大学 | Preparation method of electronic ammonia gas sensor based on non-covalent monoatomic layer graphene |
| CN114088777A (en) * | 2021-11-08 | 2022-02-25 | 燕山大学 | Ammonia gas sensor based on organic heterojunction structure and preparation method thereof |
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| CN109975368A (en) * | 2019-03-21 | 2019-07-05 | 西南大学 | A kind of preparation method of the graphene oxidation tin composite material for gas sensing |
| CN112034014A (en) * | 2020-08-21 | 2020-12-04 | 山东大学 | Preparation method of electronic ammonia gas sensor based on non-covalent monoatomic layer graphene |
| CN114088777A (en) * | 2021-11-08 | 2022-02-25 | 燕山大学 | Ammonia gas sensor based on organic heterojunction structure and preparation method thereof |
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Application publication date: 20160217 |